Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 19.1, January 2020

11


Philips Models

This chapter describes the component statements for the following models:

Diode Level 500 (dio500)

The dio500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is described in the Philips Bipolar Modelbook (Dec.93) as Diode level 500. Information on how to obtain this document can be found on Source Link by searching for Philips.

(c) Philips Electronics N.V. 1994

In extension to the model book description a minimum conductance gmin is inserted between the diode nodes to aid convergence. The value of gmin is set by an options statement, default is gmin = 1.0e-12 S.

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the diode are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor, and a warning is printed.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

d1 (pnode 0) phdiode area=2

Sample Model Statement

model phdiode dio500 is=3.5e-12 rs=26.3 n=2.7 imax=1e20 vlc=1.8 vbr=9.63 cj=2.65e-11 dta=12.88 tau=7.5e-10 tnom=25

Instance Definition

Name  a  k ModelName parameter=value ...

Instance Parameters

1

area=1.0

Multiplication factor.

2

mult

Alias of area factor.

3

m=1.0

Multiplicity factor.

4

region=fwd

Estimated DC operating region, which is used as a convergence aid. Possible values are fwd, rev or brk.

5

trise= (K)

Temperature rise from ambient

Model Definition

model modelName dio500 parameter=value ...

Model Parameters

1

is=7.13e-13 A

Saturation current.

2

n=1.044

Junction emission coefficient.

3

vlc=0.0 V

Voltage dependence at low forward currents.

4

vbr=7.459 V

Breakdown voltage.

5

emvbr=1.36e+06 V/cm

Electric field at breakdown.

6

csrh=7.44e-07 A/cm

Shockley-Read-Hall generation.

7

cbbt=3.255 A/V

Band to band tunneling.

8

ctat=3.31e-06 A/cm

Trap assisted tunneling.

9

rs=0.0

Series resistance.

10

tau=500.0e-12 s

Transit time.

11

cj=7.0e-12 F

Zero-bias depletion capacitance.

12

vd=0.9 V

Diffusion voltage.

13

p=0.4

Grading coefficient.

14

tref (C)

Reference temperature. Default set by option tnom.

15

tnom (C)

Alias of tref.

16

tr (C)

Alias of tref.

17

vg=1.206 V

Bandgap voltage.

18

ptrs=0.0

Power for temperature dependence of rs.

19

kf=0.0

Flickernoise coefficient.

20

af=1.0

Flickernoise exponent.

21

dta=0.0 K

Difference between device temperature and ambient temperature.

22

trise (K)

Alias of dta.

23

imax=1.0 A

Explosion current.

Operating-Point Parameters

1

vak (V)

Diode voltage, measured from anode to cathode (including rs).

2

id (A)

Total resistive diode current.

3

qd (Coul)

Diffusion charge.

4

qt (Coul)

Depletion charge.

5

rst ()

Series resistance (temperature updated).

6

rl ()

AC linearized resistance.

7

cl (F)

AC linearized capacitance.

8

ctotal (F)

AC linearized capacitance.

9

lx5 (F)

AC linearized capacitance.

10

pwr (W)

Power dissipation.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

af      M-20
id      OP-2
pwr      OP-10
tref      M-14
area      I-1
imax      M-23
qd      OP-3
trise      I-5
cbbt      M-7
is      M-1
qt      OP-4
trise      M-22
cj      M-11
kf      M-19
region      I-4
vak      OP-1
cl      OP-7
lx5      OP-9
rl      OP-6
vbr      M-4
csrh      M-6
m      I-3
rs      M-9
vd      M-12
ctat      M-8
mult      I-2
rst      OP-5
vg      M-17
ctotal      OP-8
n      M-2
tau      M-10
vlc      M-3
dta      M-21
p      M-13
tnom      M-15
emvbr      M-5
ptrs      M-18
tr      M-16

Lateral PNP Transistor (bjt301)

The bjt301 model provides an extensive description of a lateral integrated circuit junction-isolated PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.93) as TPL level 301.

(c) Philips Electronics N.V. 1993

In extension to the model book description a minimum conductance gmin is inserted between the internal base and internal collector node, between the internal base and the internal emitter node, and between the external base and the substrate node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

q2 (minus net3 vcc) pnp_mod region=fwd area=1 m=1

Sample Model Statement:

model pnp_mod bjt301 type=pnp struct=lateral is=1e-14 bf=85 ilf=11e-9 ikf=95e-6 re=3.2 cje=0.352e-12

Instance Definition

Name  c  b  e  [s] ModelName parameter=value ...

Instance Parameters

1

area=1

Area factor.

2

mult=1

Alias of area factor.

3

m=1

Multiplicity factor.

4

region=fwd

Estimated DC operating region; used as a convergence aid. Possible values are off, fwd, rev,  and sat.

5

trise=0.0 K

Temperature rise from ambient.

Model Definition

model modelName bjt301 parameter=value ...

Model Parameters

Structural parameters

1

type=pnp

Transistor type. Possible values are pnp or pnpl.

2

struct=lateral

Transistor structure. Possible values are lateral.

Current parameters

3

is=1.0e-15 A

Saturation current.

4

imax=1.0 A

Explosion current.

5

bf=100.0 A/A

Ideal forward common-emitter current gain (beta).

6

ilf=10.0e-9 A

Low-level knee-current of forward beta.

7

nlf=2.0

Emission coefficient of non-ideal forward base current.

8

ikf=100.0e-6 A

High-injection knee-current of forward beta.

9

nhf=1.0

Basewidening exponent.

10

veaf=50.0 V

Early voltage related to collector junction.

11

br=10.0 A/A

Ideal reverse common-collector current gain (beta).

12

ilr=10.0e-9 A

Low-level knee-current of reverse beta.

13

nlr=2.0

Emission coefficient of non-ideal reverse base current.

14

ikr=100.0e-6 A

High-injection knee-current of reverse beta.

15

iks=100.0e-6 A

High-injection current of substrate effect.

16

xcs=1.0

Current fraction of c-b-s transistor.

17

xes=0.01

Current fraction of e-b-s transistor.

Parasitic resistance parameters

18

rc=1.0

Collector resistance.

19

rbc=10.0

Constant part of base resistance.

20

rbv=10.0

Variable part of base resistance.

21

re=1.0

Emitter series resistance.

Junction capacitance parameters

22

taub=25.0e-9 s

Forward transit time related to neutral base.

23

taune=1.0e-9 s

Forward transit time related to neutral emitter in neutral e-b region.

24

mtau=1.0

Coefficient of current dependence of taune.

25

cje=100.0e-15 F

Zero bias emitter-base depletion capacitance.

26

vde=0.55 V

Emitter-base diffusion voltage.

27

pe=0.333

Emitter-base grading coefficient.

28

taur=100.0e-9 s

Ideal reverse transit time.

29

cjc=200.0e-15 F

Zero bias collector-base depletion capacitance.

30

vdc=0.55 V

Collector-base diffusion voltage.

31

pc=0.333

Collector-base grading coefficient.

32

cjs=1.0e-12 F

Zero bias substrate junction depletion capacitance.

33

vds=0.55 V

Substrate junction diffusion voltage.

34

ps=0.333

Substrate junction grading coefficient.

35

exphi=0.3

Excess phase shift.

36

fc=0.95

Coefficient for forward bias capacitance.

Temperature effects parameters

37

tref (C)

Reference temperature. Default set by option tnom.

38

tnom (C)

Alias of tref. Default set by option tnom.

39

dta=0.0 K

Difference between device temperature and ambient temperature.

40

trise=0.0 K

Alias of dta.

41

ptbf=0.0

Power for temperature dependence of bf.

42

ptbr=0.0

Power for temperature dependence of br.

43

ptrc=0.0

Power for temperature dependence of rc.

44

ptrb=0.0

Power for temperature dependence of rbc and rbv.

45

vg=1.2 V

Band-gap voltage.

46

pt=1.2

Power for temperature dependence of diffusion coefficient.

Noise model parameters

47

kf=0.0

Flickernoise coefficient.

48

af=1.0

Flickernoise exponent.

Operating-Point Parameters

1

ib (A)

Base current.

2

ic (A)

Collector current.

3

ie (A)

Emitter current.

4

isub (A)

Substrate current.

5

vbe (V)

Base-emitter voltage.

6

vbc (V)

Base-collector voltage.

7

vce (V)

Collector-emitter voltage.

8

vsubj (V)

Substrate voltage.

9

betadc (A/A)

Ratio of DC collector current to DC Base current.

10

rb ()

Base resistance at operating point.

11

rc ()

Collector resistance at operating point.

12

re ()

Emitter resistance at operating point.

13

icb (A)

Collector-Base current.

14

ieb (A)

Emitter-Base current.

15

icsub (A)

Collector-Substrate current.

16

iesub (A)

Emitter-Substrate current.

17

pwr (W)

Power.

18

gpi (S)

Conductance emitter-base junction.

19

gmu (S)

Conductance collector-base junction.

20

gf (S)

Forward transconductance.

21

gr (S)

Reverse transconductance.

22

gs (S)

Conductance substrate-base junction.

23

g3 (S)

Transconductance (parasitic PNP) c-b-s transistor.

24

g4 (S)

Transconductance (parasitic PNP) e-b-s transistor.

25

ced (F)

Emitter diffusion capacitance.

26

ccd (F)

Collector diffusion capacitance.

27

cet (F)

Emitter junction depletion capacitance.

28

cct (F)

Collector junction depletion capacitance.

29

cst (F)

Substrate junction depletion capacitance.

30

betaac (A/A)

Small-signal common-emitter current gain.

31

ft (Hz)

Unity small-signal current-gain frequency.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

af      M-48
gmu      OP-19
mtau      M-24
region      I-4
area      I-1
gpi      OP-18
mult      I-2
struct      M-2
betaac      OP-30
gr      OP-21
nhf      M-9
taub      M-22
betadc      OP-9
gs      OP-22
nlf      M-7
taune      M-23
bf      M-5
ib      OP-1
nlr      M-13
taur      M-28
br      M-11
ic      OP-2
pc      M-31
tnom      M-38
ccd      OP-26
icb      OP-13
pe      M-27
tref      M-37
cct      OP-28
icsub      OP-15
ps      M-34
trise      I-5
ced      OP-25
ie      OP-3
pt      M-46
trise      M-40
cet      OP-27
ieb      OP-14
ptbf      M-41
type      M-1
cjc      M-29
iesub      OP-16
ptbr      M-42
vbc      OP-6
cje      M-25
ikf      M-8
ptrb      M-44
vbe      OP-5
cjs      M-32
ikr      M-14
ptrc      M-43
vce      OP-7
cst      OP-29
iks      M-15
pwr      OP-17
vdc      M-30
dta      M-39
ilf      M-6
rb      OP-10
vde      M-26
exphi      M-35
ilr      M-12
rbc      M-19
vds      M-33
fc      M-36
imax      M-4
rbv      M-20
veaf      M-10
ft      OP-31
is      M-3
rc      M-18
vg      M-45
g3      OP-23
isub      OP-4
rc      OP-11
vsubj      OP-8
g4      OP-24
kf      M-47
re      M-21
xcs      M-16
gf      OP-20
m      I-3
re      OP-12
xes      M-17

Lateral PNP Transistor (bjt500)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s ModelName parameter=value ...

Instance Parameters

1

mult=1

Area factor.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt500 parameter=value ...

Model Parameters

1

level=500

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

is=1.8e-16 A

Collector-emitter saturation current.

4

bf=131 A

Ideal forward common-emitter current gain.

5

ibf=2.6e-14 A

Saturation current of non-ideal forward base current.

6

vlf=0.54 V

Cross-over voltage of non-ideal forward base current.

7

ik=0.00011 A

High injection knee current.

8

xifv=0.43

Vertical fraction of forward current.

9

eafl=20.5 V

Early voltage of the lateral forward current component.

10

eafv=75 V

Early voltage of the vertical forward current component.

11

br=25 A

Ideal reverse common-emitter current gain.

12

ibr=1.2e-13 A

Saturation current of non-ideal reverse base current.

13

vlr=0.48 V

Cross-over voltage of non-ideal reverse base current.

14

xirv=0.43

Vertical fraction of reverse current.

15

earl=13.1 V

Early voltage of the lateral reverse current component.

16

earv=104 V

Early voltage of the vertical reverse current component.

17

xes=0.0027

Ratio between saturation current of e-b-s transistor and e-b-c transistor.

18

xhes=0.7

Fraction of substrate current of e-b-s transistor subject to high injection.

19

xcs=3

Ratio between saturation current of c-b-s transistor and c-b-e transistor.

20

xhcs=1

Fraction of substrate current of c-b-s transistor subject to high injection.

21

iss=4e-13 A

Saturation current of substrate-base diode.

22

rcex=5

External part of the collector resistance.

23

rcin=47

Internal part of the collector resistance.

24

rbcc=10

Constant part of the base resistance rbc.

25

rbcv=10

Variable part of the base resistance rbc.

26

rbec=10

Constant part of the base resistance rbe.

27

rbev=50

Variable part of the base resistance rbe.

28

reex=27

External part of the emitter resistance.

29

rein=66

Internal part of the emitter resistance.

30

rsb=1e+15

Substrate-base leakage resistance.

31

tlat=2.4e-09 s

Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.

32

tfvr=3e-08 s

Low injection forward transit time due to charge stored in the epilayer under the emitter.

33

tfn=2e-10 s

Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.

34

cje=6.1e-14 F

Zero-bias emitter-base depletion capacitance.

35

vde=0.52 V

Emitter-base diffusion voltage.

36

pe=0.3

Emitter-base grading coefficient.

37

trvr=1e-09 s

Low injection reverse transit time due to charge stored in the epilayer under the collector.

38

trn=3e-09 s

Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.

39

cjc=3.9e-13 F

Zero-bias collector-base depletion capacitance.

40

vdc=0.57 V

Collector-base diffusion voltage.

41

pc=0.36

Collector-base grading coefficient.

42

cjs=1.3e-12 F

Zero-bias substrate-base depletion capacitance.

43

vds=0.52 V

Substrate-base diffusion voltage.

44

ps=0.35

Substrate-base grading coefficient.

45

tref=25 C

Reference temperature. Default set by option tnom.

46

dta=0 K

Difference between the device temperature and the ambient analysis temperature.

47

vgeb=1.21 V

Bandgap voltage of the emitter-base depletion region.

48

vgcb=1.21 V

Bandgap voltage of the collector-base depletion region.

49

vgsb=1.21 V

Bandgap voltage of the substrate-base depletion region.

50

vgb=1.21 V

Bandgap voltage of the base between emitter and collector.

51

vge=1.21 V

Bandgap voltage of the emitter.

52

vgje=1.12 V

Bandgap voltage recombination emitter-base junction.

53

ae=4.48

Temperature coefficient of bf.

54

spb=2.85

SC.

55

snb=2.6

Temperature coefficient of the epitaxial base electron mobility.

56

snbn=0.3

Temperature coefficient of buried layer electron mobility.

57

spe=0.73

Temperature coefficient of emitter hole mobility.

58

spc=0.73

Temperature coefficient of collector hole mobility.

59

sx=1

Temperature coefficient of combined minority carrier mobility in emitter and buried layer.

60

kf=0

Flickernoise coefficient.

61

af=1

Flickernoise exponent.

62

exphi=0

Not used in model bjt500.

63

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

64

imax=1000 A

Explosion current.

65

tnom (C)

alias of tnom.

66

tr (C)

alias of tnom.

67

simkitver=3.4

68

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ic (A)

External DC collector current.

2

ib (A)

External DC base current.

3

ie (A)

Resistive emitter current.

4

isub (A)

Resistive substrate current.

5

iflat (A)

Lateral forward current.

6

irlat (A)

Lateral reverse current.

7

ifver (A)

Vertical forward current.

8

irver (A)

Vertical reverse current.

9

ire (A)

ideal forward base current.

10

ile (A)

Non-ideal forward base current.

11

ise (A)

Forward substrate current.

12

irc (A)

Ideal reverse base current.

13

ilc (A)

Non-ideal reverse base current.

14

isc (A)

Reverse substrate current.

15

isf (A)

Reverse leakage current of the substrate-base junction.

16

ip (A)

Main current.

17

betadc

External DC current gain Ic/Ib.

18

vbc (V)

Base-collector voltage.

19

vbe (V)

Base-emitter voltage.

20

vce (V)

Collector-emitter voltage.

21

vsb (V)

Substrate-base voltage.

22

rcex ()

External part of the collector resistance.

23

rcin ()

Internal part of the collector resistance.

24

reex ()

External part of the emitter resistance.

25

rein ()

Internal part of the emitter resistance.

26

rbc ()

Base resistance under the collector.

27

rbe ()

Base resistance under the emitter.

28

rsb ()

Ohmic leakage across the substrate-base junction.

29

pwr (W)

Power.

30

gfl (S)

Forward conductance, lateral path.

31

grl (S)

Reverse conductance, lateral path.

32

g11 (S)

Forward conductance, vertical path.

33

g12 (S)

Collector Early-effect on Ifver.

34

g21 (S)

Emitter Early-effect on Irver.

35

g22 (S)

Reverse conductance, vertical path.

36

gpiv (S)

Conductance emitter-base junction.

37

gmuv (S)

Conductance collector-base junction.

38

gbe (S)

Emitter-side: base conductance B1-B.

39

gibe (S)

Emitter Early-effect on Ib1b.

40

gbc (S)

Collector-side: base conductance B2-B.

41

gibc (S)

Collector Early-effect on Ib2b.

42

gise (S)

Transconductance (parasitic PNP) e-b-s transistor.

43

gisc (S)

Transconductance  (parasitic PNP) c-b-s transistor.

44

gsb (S)

Conductance substrate-base junction.

45

cpil (F)

Forward diffusion capacitance, lateral path.

46

cipil (F)

Collector Early-effect on Qflat.

47

cpiv (F)

Forward total capacitance, vertical path.

48

cmul (F)

Reverse diffusion capacitance, lateral path.

49

cimul (F)

Emitter Early-effect on Qrlat.

50

cmuv (F)

Reverse total capacitance, vertical path.

51

csb (F)

Total capacitance substrate-base junction.

52

irbe (A)

Ideal total forward base current.

53

irbc (A)

Ideal total reverse base current.

54

irsb (A)

Substrate base leakage resistance current.

55

jtype

type: +1=npn and -1=pnp.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

ae M-53 gise OP-42 m I-5 tfn M-33
af M-61 gmuv OP-37 meff O-2 tfvr M-32
area I-6 gpiv OP-36 mult I-1 tlat M-31
betadc OP-17 grl OP-31 paramchk M-2 tnom M-65
bf M-4 gsb OP-44 pc M-41 tr M-66
br M-11 ib OP-2 pe M-36 tref M-45
cimul OP-49 ibf M-5 printscaled I-2 trise I-3
cipil OP-46 ibr M-12 ps M-44 trn M-38
cjc M-39 ic OP-1 pwr OP-29 trvr M-37
cje M-34 ie OP-3 rbc OP-26 type M-63
cjs M-42 iflat OP-5 rbcc M-24 vbc OP-18
cmul OP-48 ifver OP-7 rbcv M-25 vbe OP-19
cmuv OP-50 ik M-7 rbe OP-27 vce OP-20
compatible M-67 ilc OP-13 rbec M-26 vdc M-40
cpil OP-45 ile OP-10 rbev M-27 vde M-35
cpiv OP-47 imax M-64 rcex M-22 vds M-43
csb OP-51 ip OP-16 rcex OP-22 vgb M-50
dta M-46 irbc OP-53 rcin M-23 vgcb M-48
eafl M-9 irbe OP-52 rcin OP-23 vge M-51
eafv M-10 irc OP-12 reex M-28 vgeb M-47
earl M-15 ire OP-9 reex OP-24 vgje M-52
earv M-16 irlat OP-6 region I-4 vgsb M-49
exphi M-62 irsb OP-54 rein M-29 vlf M-6
g11 OP-32 irver OP-8 rein OP-25 vlr M-13
g12 OP-33 is M-3 rsb M-30 vsb OP-21
g21 OP-34 isc OP-14 rsb OP-28 xcs M-19
g22 OP-35 ise OP-11 snb M-55 xes M-17
gbc OP-40 isf OP-15 snbn M-56 xhcs M-20
gbe OP-38 iss M-21 spb M-54 xhes M-18
gfl OP-30 isub OP-4 spc M-58 xifv M-8
gibc OP-41 jtype OP-55 spe M-57 xirv M-14
gibe OP-39 kf M-60 sx M-59
gisc OP-43 level M-1 tempeff O-1

Lateral PNP Transistor (bjt500t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Area factor.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt500t parameter=value ...

Model Parameters

1

level=500

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

is=1.8e-16 A

Collector-emitter saturation current.

4

bf=131 A

Ideal forward common-emitter current gain.

5

ibf=2.6e-14 A

Saturation current of non-ideal forward base current.

6

vlf=0.54 V

Cross-over voltage of non-ideal forward base current.

7

ik=0.00011 A

High injection knee current.

8

xifv=0.43

Vertical fraction of forward current.

9

eafl=20.5 V

Early voltage of the lateral forward current component.

10

eafv=75 V

Early voltage of the vertical forward current component.

11

br=25 A

Ideal reverse common-emitter current gain.

12

ibr=1.2e-13 A

Saturation current of non-ideal reverse base current.

13

vlr=0.48 V

Cross-over voltage of non-ideal reverse base current.

14

xirv=0.43

Vertical fraction of reverse current.

15

earl=13.1 V

Early voltage of the lateral reverse current component.

16

earv=104 V

Early voltage of the vertical reverse current component.

17

xes=0.0027

Ratio between saturation current of e-b-s transistor and e-b-c transistor.

18

xhes=0.7

Fraction of substrate current of e-b-s transistor subject to high injection.

19

xcs=3

Ratio between saturation current of c-b-s transistor and c-b-e transistor.

20

xhcs=1

Fraction of substrate current of c-b-s transistor subject to high injection.

21

iss=4e-13 A

Saturation current of substrate-base diode.

22

rcex=5

External part of the collector resistance.

23

rcin=47

Internal part of the collector resistance.

24

rbcc=10

Constant part of the base resistance rbc.

25

rbcv=10

Variable part of the base resistance rbc.

26

rbec=10

Constant part of the base resistance rbe.

27

rbev=50

Variable part of the base resistance rbe.

28

reex=27

External part of the emitter resistance.

29

rein=66

Internal part of the emitter resistance.

30

rsb=1e+15

Substrate-base leakage resistance.

31

tlat=2.4e-09 s

Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.

32

tfvr=3e-08 s

Low injection forward transit time due to charge stored in the epilayer under the emitter.

33

tfn=2e-10 s

Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.

34

cje=6.1e-14 F

Zero-bias emitter-base depletion capacitance.

35

vde=0.52 V

Emitter-base diffusion voltage.

36

pe=0.3

Emitter-base grading coefficient.

37

trvr=1e-09 s

Low injection reverse transit time due to charge stored in the epilayer under the collector.

38

trn=3e-09 s

Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.

39

cjc=3.9e-13 F

Zero-bias collector-base depletion capacitance.

40

vdc=0.57 V

Collector-base diffusion voltage.

41

pc=0.36

Collector-base grading coefficient.

42

cjs=1.3e-12 F

Zero-bias substrate-base depletion capacitance.

43

vds=0.52 V

Substrate-base diffusion voltage.

44

ps=0.35

Substrate-base grading coefficient.

45

tref=25 C

Reference temperature. Default set by option tnom.

46

dta=0 K

Difference between the device temperature and the ambient analysis temperature.

47

vgeb=1.21 V

Bandgap voltage of the emitter-base depletion region.

48

vgcb=1.21 V

Bandgap voltage of the collector-base depletion region.

49

vgsb=1.21 V

Bandgap voltage of the substrate-base depletion region.

50

vgb=1.21 V

Bandgap voltage of the base between emitter and collector.

51

vge=1.21 V

Bandgap voltage of the emitter.

52

vgje=1.12 V

Bandgap voltage recombination emitter-base junction.

53

ae=4.48

Temperature coefficient of bf.

54

spb=2.85

SC.

55

snb=2.6

Temperature coefficient of the epitaxial base electron mobility.

56

snbn=0.3

Temperature coefficient of buried layer electron mobility.

57

spe=0.73

Temperature coefficient of emitter hole mobility.

58

spc=0.73

Temperature coefficient of collector hole mobility.

59

sx=1

Temperature coefficient of combined minority carrier mobility in emitter and buried layer.

60

kf=0

Flickernoise coefficient.

61

af=1

Flickernoise exponent.

62

exphi=0

Not used in model bjt500.

63

rth=300 K/W

Thermal resistance.

64

cth=3e-09 J/K

Thermal capacitance.

65

ath=0

Temperature coefficient of the thermal resistance.

66

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

67

imax=1000 A

Explosion current.

68

tnom (C)

alias of tnom.

69

tr (C)

alias of tnom.

70

simkitver=3.4

71

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ic (A)

External DC collector current.

2

ib (A)

External DC base current.

3

ie (A)

Resistive emitter current.

4

isub (A)

Resistive substrate current.

5

iflat (A)

Lateral forward current.

6

irlat (A)

Lateral reverse current.

7

ifver (A)

Vertical forward current.

8

irver (A)

Vertical reverse current.

9

ire (A)

ideal forward base current.

10

ile (A)

Non-ideal forward base current.

11

ise (A)

Forward substrate current.

12

irc (A)

Ideal reverse base current.

13

ilc (A)

Non-ideal reverse base current.

14

isc (A)

Reverse substrate current.

15

isf (A)

Reverse leakage current of the substrate-base junction.

16

ip (A)

Main current.

17

betadc

External DC current gain Ic/Ib.

18

vbc (V)

Base-collector voltage.

19

vbe (V)

Base-emitter voltage.

20

vce (V)

Collector-emitter voltage.

21

vsb (V)

Substrate-base voltage.

22

rcex ()

External part of the collector resistance.

23

rcin ()

Internal part of the collector resistance.

24

reex ()

External part of the emitter resistance.

25

rein ()

Internal part of the emitter resistance.

26

rbc ()

Base resistance under the collector.

27

rbe ()

Base resistance under the emitter.

28

rsb ()

Ohmic leakage across the substrate-base junction.

29

pwr (W)

Power.

30

gfl (S)

Forward conductance, lateral path.

31

grl (S)

Reverse conductance, lateral path.

32

g11 (S)

Forward conductance, vertical path.

33

g12 (S)

Collector Early-effect on Ifver.

34

g21 (S)

Emitter Early-effect on Irver.

35

g22 (S)

Reverse conductance, vertical path.

36

gpiv (S)

Conductance emitter-base junction.

37

gmuv (S)

Conductance collector-base junction.

38

gbe (S)

Emitter-side: base conductance B1-B.

39

gibe (S)

Emitter Early-effect on Ib1b.

40

gbc (S)

Collector-side: base conductance B2-B.

41

gibc (S)

Collector Early-effect on Ib2b.

42

gise (S)

Transconductance (parasitic PNP) e-b-s transistor.

43

gisc (S)

Transconductance (parasitic PNP) c-b-s transistor.

44

gsb (S)

Conductance substrate-base junction.

45

cpil (F)

Forward diffusion capacitance, lateral path.

46

cipil (F)

Collector Early-effect on Qflat.

47

cpiv (F)

Forward total capacitance, vertical path.

48

cmul (F)

Reverse diffusion capacitance, lateral path.

49

cimul (F)

Emitter Early-effect on Qrlat.

50

cmuv (F)

Reverse total capacitance, vertical path.

51

csb (F)

Total capacitance substrate-base junction.

52

irbe (A)

Ideal total forward base current.

53

irbc (A)

Ideal total reverse base current.

54

irsb (A)

Substrate base leakage resistance current.

55

Pdiss (W)

Dissipation.

56

TK (K)

Actual device temperature.

57

jtype

Type
+1=npn and -1=pnp.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss      OP-55
gibc      OP-41
kf      M-60
sx      M-59
TK      OP-56
gibe      OP-39
level      M-1
tempeff      O-1
ae      M-53
gisc      OP-43
m      I-5
tfn      M-33
af      M-61
gise      OP-42
meff      O-2
tfvr      M-32
area      I-6
gmuv      OP-37
mult      I-1
tlat      M-31
ath      M-65
gpiv      OP-36
paramchk      M-2
tnom      M-68
betadc      OP-17
grl      OP-31
pc      M-41
tr      M-69
bf      M-4
gsb      OP-44
pe      M-36
tref      M-45
br      M-11
ib      OP-2
printscaled      I-2
trise      I-3
cimul      OP-49
ibf      M-5
ps      M-44
trn      M-38
cipil      OP-46
ibr      M-12
pwr      OP-29
trvr      M-37
cjc      M-39
ic      OP-1
rbc      OP-26
type      M-66
cje      M-34
ie      OP-3
rbcc      M-24
vbc      OP-18
cjs      M-42
iflat      OP-5
rbcv      M-25
vbe      OP-19
cmul      OP-48
ifver      OP-7
rbe      OP-27
vce      OP-20
cmuv      OP-50
ik      M-7
rbec      M-26
vdc      M-40
compatible      M-70
ilc      OP-13
rbev      M-27
vde      M-35
cpil      OP-45
ile      OP-10
rcex      M-22
vds      M-43
cpiv      OP-47
imax      M-67
rcex      OP-22
vgb      M-50
csb      OP-51
ip      OP-16
rcin      M-23
vgcb      M-48
cth      M-64
irbc      OP-53
rcin      OP-23
vge      M-51
dta      M-46
irbe      OP-52
reex      M-28
vgeb      M-47
eafl      M-9
irc      OP-12
reex      OP-24
vgje      M-52
eafv      M-10
ire      OP-9
region      I-4
vgsb      M-49
earl      M-15
irlat      OP-6
rein      M-29
vlf      M-6
earv      M-16
irsb      OP-54
rein      OP-25
vlr      M-13
exphi      M-62
irver      OP-8
rsb      M-30
vsb      OP-21
g11      OP-32
is      M-3
rsb      OP-28
xcs      M-19
g12      OP-33
isc      OP-14
rth      M-63
xes      M-17
g21      OP-34
ise      OP-11
snb      M-55
xhcs      M-20
g22      OP-35
isf      OP-15
snbn      M-56
xhes      M-18
gbc      OP-40
iss      M-21
spb      M-54
xifv      M-8
gbe      OP-38
isub      OP-4
spc      M-58
xirv      M-14
gfl      OP-30
jtype      OP-57
spe      M-57

Vertical NPN/PNP Transistor (bjt503)

The bjt503 model provides a detailed description of a vertical integrated NPN and PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.95) as TN/TNS and TP/TPS level 503.

The NPN is also described in Nat.Lab. Unclassified Report Nr. 006/94 as Mextram Bipolar Transistor Model. Information on how to obtain this document can be found on Source Link by searching for Philips.

(c) Philips Electronics N.V. 1993,1996

In addition to the model description a level parameter is added. Via the level parameter the user can switch between Philips Bipolar Modelbook (Dec.95) and Philips Bipolar Modelbook (Dec.94).

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.

The descriptions of the operating point derivatives are given for the NPN type. For the PNP type the terminal voltage in the descriptions has to be exchanged. E.g.:

NPN: gx = dIn/dVb2e1

PNP: gx = dIn/dVe1b2

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

q4 (vcc net3 minus) npn_mod region=fwd m=1 mult=1

Sample Model Statement:

model npn_mod bjt503 type=npn level=2 exmod=1 is=1e-14 bf=85 ik=95e-6 rbc=50 cje=0.352e-12

Instance Definition

Name  c  b  e  [s] ModelName parameter=value ...

Instance Parameters

1

area=1

Area factor.

2

mult=1

Alias of area factor.

3

m=1

Multiplication factor.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, fwd, rev, and sat.

5

trise=0.0 K

Temperature rise from ambient.

6

lv1=1

7

lv4=1

Model Definition

model modelName bjt503 parameter=value ...

Model Parameters

1

type=npn

Transistor type. Possible values are npn, npnv, pnp, and pnpv.

2

level=2.0

Transistor Level. Possible values are 1 (Philips Bipolar Modelbook Dec.94) or 2 (Philips Bipolar Modelbook Dec.95).

3

exmod=0

Flag for extended modeling of the reverse current gain.

4

exphi=0

Flag for distributed high frequency effects.

5

exavl=1

Flag for extended modeling of avalanche currents.

6

is=5.0e-17 A

Collector-emitter saturation current.

7

bf=140.0 A/A

Ideal forward current gain.

8

xibi=0.0

Fraction of ideal base current that belongs to the sidewall.

9

ibf=2.0e-14 A

Saturation current of the non-ideal forward base current.

10

vlf=0.5 V

Cross-over voltage of the non-ideal forward base current.

11

ik=15.0e-3 A

High-injection knee current.

12

bri=16.0 A/A

Ideal reverse current gain.

13

ibr=8.0e-15 A

Saturation current of the non-ideal reverse base current.

14

vlr=0.5 V

Cross-over voltage of the non-ideal reverse base current.

15

xext=0.5

Part of Iex, Qex, Qtex and Isub that depends on Vbc1.

16

qbo=1.2e-12 Coul

Base charge at zero bias.

17

eta=4.0

Factor of the built-in field of the base.

18

avl=50.0

Weak avalanche parameter.

19

efi=0.7

Electric field intercept (with exavl=1.

20

ihc=3.0e-3 A

Critical current for hot carriers.

21

rcc=25.0

Constant part of the collector resistance.

22

rcv=750.0

Resistance of the unmodulated epilayer.

23

scrcv=1000.0

Space charge resistance of the epilayer.

24

sfh=0.6

Current spreading factor epilayer.

25

rbc=50.0

Constant part of the base resistance.

26

rbv=100.0

Variable part of the base resistance at zero bias.

27

re=2.0

Emitter series resistance.

28

taune=3.0e-10 s

Minimum delay time of neutral and emitter charge.

29

mtau=1.18

Non-ideality factor of the neutral and emitter charge.

30

cje=2.5e-13 F

Zero bias emitter-base depletion capacitance.

31

vde=0.9 V

Emitter-base diffusion voltage.

32

pe=0.33

Emitter-base grading coefficient.

33

xcje=0.5

Fraction of the e-b depletion cap. that belongs to the sidewall.

34

cjc=1.3e-13 F

Zero bias collector-base depletion capacitance.

35

vdc=0.6 V

Collector-base diffusion voltage.

36

pc=0.4

Collector-base grading coefficient variable part.

37

xp=0.2

Constant part of cjc.

38

mc=0.5

Collector current modulation coefficient.

39

xcjc=0.1

Fraction of the collector-base depletion cap. under the emitter area.

40

tref (C)

Reference temperature. Default set by option tnom.

41

tnom (C)

Alias of tref. Default set by option tnom.

42

tr (C)

Alias of tref. Default set by option tnom.

43

dta=0.0 K

Difference of the device temperature to the ambient temperature. It served as the default value of instance trise.

44

trise=0.0 K

Alias of dta.

45

vge=1.01 V

Band-gap voltage of the emitter.

46

vgb=1.18 V

Band-gap voltage of the base.

47

vgc=1.205 V

Band-gap voltage of the collector.

48

vgj=1.1 V

Band-gap voltage recombination emitter-base junction.

49

vi=0.04 V

Ionization voltage base dope.

50

na=3.0e17 cm-3

Maximum base dope concentration.

51

er=2.0e-3

Temperature coefficient of vlf and vlr.

52

ab=1.35

Temperature coefficient resistivity base.

53

aepi=2.15

Temperature coefficient resistivity of the epilayer.

54

aex=1.0

Temperature coefficient resistivity of the extrinsic base.

55

ac=0.4

Temperature coefficient resistivity of the buried layer.

56

kf=2.0e-16

Flickernoise coefficient ideal base current.

57

kfn=2.0e-16

Flickernoise coefficient non-ideal base current.

58

af=1.0

Flickernoise exponent.

59

iss=6.0e-16 A

Base-substrate saturation current.

60

iks=5.0e-6 A

Knee current of the substrate.

61

cjs=1.0e-12 F

Zero bias collector-substrate depletion capacitance.

62

vds=0.5 V

Collector-substrate diffusion voltage.

63

ps=0.33

Collector-substrate grading coefficient.

64

vgs=1.15 V

Band-gap voltage of the substrate.

65

as=2.15

For a closed buried layer: as=ac. For an open buried layer: as=aepi.

66

imax=1.0 A

Explosion current.

67

vers=503

Version mextrem.

68

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, hspice,  and spiceplus.

69

subs=1

Operating-Point Parameters

1

ib (A)

Base current.

2

ic (A)

Collector current.

3

ie (A)

Emitter current.

4

is (A)

Substrate current.

5

vbe (V)

Base-emitter voltage.

6

vbc (V)

Base-collector voltage.

7

vce (V)

Collector-emitter voltage.

8

vsc (V)

Substrate voltage.

9

re ()

Constant emitter resistance.

10

rcc ()

Constant collector resistance.

11

rbc ()

Constant part of base resistance.

12

betadc (A/A)

DC current gain.

13

pwr (W)

Power.

14

Vb1e1 (V)

Internal voltage.

15

Vb2e1 (V)

Internal voltage.

16

Vb2c1 (V)

Internal voltage.

17

Vb2c2 (V)

Internal voltage.

18

Vb1b2 (V)

Internal voltage.

19

Vb1c1 (V)

Internal voltage.

20

Vbc1 (V)

Internal voltage.

21

in (A)

Main current.

22

ic1c2 (A)

Variable collector resistance current.

23

ib1 (A)

Bulk component of ideal base current.

24

ib1s (A)

Sidewall component of ideal base current.

25

ib2 (A)

Non-ideal base current.

26

iavl (A)

Weak avalanche current.

27

ib1b2 (A)

Variable base resistance current.

28

ib3 (A)

Non-ideal reverse base current.

29

iex (A)

Internal extrinsic base current.

30

isub (A)

Internal base-substrate current.

31

isf (A)

Substrate-collector current.

32

xiex (A)

External extrinsic base current.

33

Xisub (A)

External base-substrate current.

34

gx (S)

dIn/dVb2e1.

35

gy (S)

dIn/dVb2c2.

36

gz (S)

dIn/dVb2c1.

37

grcvy (S)

dIc1c2/dVb2c2.

38

grcvz (S)

dIc1c2/dVb2c1.

39

gpi (S)

Conductance floor base-emitter junction: dIb1/dVb2e1 + dIb2/dVb2e1.

40

sgpi (S)

Conductance sidewall base-emitter junction: dIb1S/dVb1e1.

41

gmux (S)

Dependence avalanche multiplication on internal b-e junction: -dIavl/dVb2e1.

42

gmu (S)

Dependence avalanche multiplication on internal b-c junction: -dIavl/dVb2c2.

43

gmuz (S)

Dependence avalanche multiplication on external b-c junction:-dIavl/dVb2c1.

44

grbv (S)

dIb1b2/dVb1b2.

45

grbvx (S)

Emitter Early-effect on Ib1b2: dIb1b2/dVb2e1.

46

grbvy (S)

Internal collector Early-effect on Ib1b2: dIb1b2/dVb2c2.

47

grbvz (S)

External collector Early effect on Ib1b2: dIb1b2/dVb2c1.

48

gmuex (S)

Conductance floor extrinsic b-c junction: dIex/dVb1c1 + dIsub/dVb1c1 + dIb3/dVb1c1.

49

xgmuex (S)

Conductance sidewall extrinsic b-c junction: dXIex/dVbc1 + dXIsub/dVbc1.

50

gsub (S)

Conductance s-c junction: dIsf/dVsc1.

51

gpnp (S)

Transconductance floor extrinsic PNP transistor: dIsub/dVb1c1.

52

xgpnp (S)

Transconductance sidewall extrinsic PNP transistor: dXIsub/dVbc1.

53

cbex (F)

Capacitance floor b-e junction: dQte/dVb2e1 + dQbe/dVb2e1 + dQn/dVb2e1.

54

cbey (F)

Internal collector Early-effect on Qbe: dQbe/dVb2c2.

55

cbez (F)

External collector Early-effect on Qbe: dQbe/dVb2c1.

56

scte (F)

Dependence of QteS on internal b-e junction: dQteS/dVb2e1.

57

cbcx (F)

Emitter Early-effect on Qbc: dQbc/dVb2e1.

58

cbcy (F)

Capacitance  intrinsic b-c junction: dQtc/dVb2c2 + dQbc/dVb2c2 + dQepi/dVb2c2.

59

cbcz (F)

Collector Early-effect on Qtc: dQtc/dVb2c1 + dQbc/dVb2c1 + dQepi/dVb2c1.

60

cb1b2 (F)

Capacitance AC current crowding: dQb1b2/dVb1b2 = Cb.

61

cb1b2x (F)

Dependence of Qb1b2 on internal b-e junction voltage: dQb1b2/dVb2e1.

62

cbcex (F)

Capacitance floor extrinsic b-c junction: dQtex/dVb1c1 + dQex/dVb1c1.

63

xcbcex (F)

Capacitance sidewall extrinsic b-c junction: dXQtex/dVbc1 + dXQex/dVbc1.

64

cts (F)

Capacitance s-c junction: dQtex/dVb1c1 + dQex/dVb1c1.

65

lv6 (A)

66

lv7 (S)

67

lv8 (A)

68

lv9 (A)

69

lv10 (A/A)

70

lv11 (A/A)

71

lv14 ()

72

lv15 ()

73

lv16 (S)

74

lx0 (V)

75

lx1 (V)

76

lx2 (A)

77

lx3 (A)

78

cbe (F)

Cbe.

79

cbc (F)

Cbc.

80

csc (F)

Csc.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Vb1b2      OP-18
eta      M-17
is      OP-4
re      OP-9
Vb1c1      OP-19
exavl      M-5
isf      OP-31
region      I-4
Vb1e1      OP-14
exmod      M-3
iss      M-59
scrcv      M-23
Vb2c1      OP-16
exphi      M-4
isub      OP-30
scte      OP-56
Vb2c2      OP-17
gmu      OP-42
kf      M-56
sfh      M-24
Vb2e1      OP-15
gmuex      OP-48
kfn      M-57
sgpi      OP-40
Vbc1      OP-20
gmux      OP-41
level      M-2
subs      M-69
Xisub      OP-33
gmuz      OP-43
lv1      I-6
taune      M-28
ab      M-52
gpi      OP-39
lv10      OP-69
tnom      M-41
ac      M-55
gpnp      OP-51
lv11      OP-70
tr      M-42
aepi      M-53
grbv      OP-44
lv14      OP-71
tref      M-40
aex      M-54
grbvx      OP-45
lv15      OP-72
trise      I-5
af      M-58
grbvy      OP-46
lv16      OP-73
trise      M-44
area      I-1
grbvz      OP-47
lv4      I-7
type      M-1
as      M-65
grcvy      OP-37
lv6      OP-65
vbc      OP-6
avl      M-18
grcvz      OP-38
lv7      OP-66
vbe      OP-5
betadc      OP-12
gsub      OP-50
lv8      OP-67
vce      OP-7
bf      M-7
gx      OP-34
lv9      OP-68
vdc      M-35
bri      M-12
gy      OP-35
lx0      OP-74
vde      M-31
cb1b2      OP-60
gz      OP-36
lx1      OP-75
vds      M-62
cb1b2x      OP-61
iavl      OP-26
lx2      OP-76
vers      M-67
cbc      OP-79
ib      OP-1
lx3      OP-77
vgb      M-46
cbcex      OP-62
ib1      OP-23
m      I-3
vgc      M-47
cbcx      OP-57
ib1b2      OP-27
mc      M-38
vge      M-45
cbcy      OP-58
ib1s      OP-24
mtau      M-29
vgj      M-48
cbcz      OP-59
ib2      OP-25
mult      I-2
vgs      M-64
cbe      OP-78
ib3      OP-28
na      M-50
vi      M-49
cbex      OP-53
ibf      M-9
pc      M-36
vlf      M-10
cbey      OP-54
ibr      M-13
pe      M-32
vlr      M-14
cbez      OP-55
ic      OP-2
ps      M-63
vsc      OP-8
cjc      M-34
ic1c2      OP-22
pwr      OP-13
xcbcex      OP-63
cje      M-30
ie      OP-3
qbo      M-16
xcjc      M-39
cjs      M-61
iex      OP-29
rbc      M-25
xcje      M-33
compatible      M-68
ihc      M-20
rbc      OP-11
xext      M-15
csc      OP-80
ik      M-11
rbv      M-26
xgmuex      OP-49
cts      OP-64
iks      M-60
rcc      M-21
xgpnp      OP-52
dta      M-43
imax      M-66
rcc      OP-10
xibi      M-8
efi      M-19
in      OP-21
rcv      M-22
xiex      OP-32
er      M-51
is      M-6
re      M-27
xp      M-37

Compact Bipolar-Transistor Model (bjt504)

This is SimKit 5.0.

Instance Definition

Name  c  b  e  s ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt504 parameter=value ...

Model Parameters

1

level=504

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

exsub=0

Flag for extended modelling of substrate currents.

10

is=2.2e-17 A

Collector-emitter saturation current.

11

ik=0.1 A

Collector-emitter high injection knee current.

12

ver=2.5 V

Reverse Early voltage.

13

vef=44 V

Forward Early voltage.

14

bf=215

Ideal forward current gain.

15

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

16

mlf=2

Non ideality factor of the non-ideal forward base current.

17

xibi=0

Part of ideal base current that belongs to the sidewall.

18

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

19

nzeb=22

Coefficient of emitter-base Zener tunneling current.

20

bri=7

Ideal reverse current gain.

21

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

22

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

23

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

24

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

25

vavl=3 V

Voltage determining curvature of avalanche current.

26

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

27

re=5

Emitter resistance.

28

rbc=23

Constant part of the base resistance.

29

rbv=18

Zero-bias value of the variable part of the base resistance.

30

rcc=12

Collector contact resistance.

31

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

32

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

33

rcv=150

Resistance of the un-modulated epilayer.

34

scrcv=1.25e+03

Space charge resistance of the epilayer.

35

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

36

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

37

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

38

vde=0.95 V

Emitter-base diffusion voltage.

39

pe=0.4

Emitter-base grading coefficient.

40

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

41

cbeo=0

Emitter-base overlap capacitance.

42

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

43

vdc=0.68 V

Collector-base diffusion voltage.

44

pc=0.5

Collector-base grading coefficient.

45

xp=0.35

Constant part of Cjc.

46

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

47

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

48

cbco=0

Collector-base overlap capacitance.

49

mtau=1

Non-ideality factor of the emitter stored charge.

50

taue=2e-12 s

Minimum transit time of stored emitter charge.

51

taub=4.2e-12 s

Transit time of stored base charge.

52

tepi=4.1e-11 s

Transit time of stored epilayer charge.

53

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

54

deg=0 eV

Bandgap difference over the base.

55

xrec=0

Pre-factor of the recombination part of Ib1.

56

xqb=0.333

Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).

57

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

58

ae=0

Temperature coefficient of the resistivity of the emitter.

59

ab=1

Temperature coefficient of the resistivity of the base.

60

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

61

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

62

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

63

ac=2

Temperature coefficient of the resistivity of the collector contact.

64

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

65

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

66

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

67

vgb=1.17 V

Bandgap voltage of the base.

68

vgc=1.18 V

Bandgap voltage of the collector.

69

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

70

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

71

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

72

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

73

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

74

af=2

Exponent of the Flicker-noise.

75

kf=2e-11

Flicker-noise coefficient of the ideal base current.

76

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

77

kavl=0

Switch for white noise contribution due to avalanche.

78

kavlver=504

Switch for avalanche noise of 504.11 and 504.12.

79

kc=0

Switch for RF correlation noise model selection.

80

ke=0

Fraction of QE in excess phase shift.

81

ftaun=0

Fraction of noise transit time to total transit time.

82

iss=4.8e-17 A

Base-substrate saturation current.

83

icss=-1 A

Collector-substrate ideal saturation current.

84

iks=0.00025 A

Base-substrate high injection knee current.

85

cjs=3.15e-13 F

Zero-bias collector-substrate depletion capacitance.

86

vds=0.62 V

Collector-substrate diffusion voltage.

87

ps=0.34

Collector-substrate grading coefficient.

88

vgs=1.2 V

Band-gap voltage of the substrate.

89

as=1.58

For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.

90

asub=2

Temperature coefficient for mobility of minorities in the substrate.

91

vexlim=400

Upper limit of exp() function argument for convergence.

92

type=npn

Transistor type.
Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

93

imax=1000 A

Explosion current.

94

mvt0=0.0

Threshold mismatch intercept.

95

tnom (deg. C)

Parameters measurement temperature.

96

tr (deg. C)

Alias of tnom.

97

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

Is (A)

External DC substrate current.

5

BetaDC

External DC current gain Ic/Ib.

6

Vbe (V)

External base-emitter bias.

7

Vbc (V)

External base-collector bias.

8

Vce (V)

External collector-emitter bias.

9

Vse (V)

External substrate-emitter bias.

10

Vbs (V)

External base-substrate bias.

11

Vsc (V)

External substrate-collector bias.

12

Vb2e1 (V)

Internal base-emitter bias.

13

Vb2c2 (V)

Internal base-collector bias.

14

Vb2c1 (V)

Internal base-collector bias including epilayer.

15

Vb1c1 (V)

External base-collector bias without contact resistances.

16

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

17

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

18

Vc4c1 (V)

Bias over intrinsic buried layer.

19

Ve1e (V)

Bias over emitter resistance.

20

In (A)

Main current.

21

Ic1c2 (A)

Epilayer current.

22

Ib1b2 (A)

Pinched-base current.

23

Ib1 (A)

Ideal forward base current.

24

SIb1 (A)

Ideal side-wall base current.

25

Izteb (A)

Zener tunneling current in the emitter base junction.

26

Ib2 (A)

Non-ideal forward base current.

27

Ib3 (A)

Non-ideal reverse base current.

28

Iex (A)

Extrinsic reverse base current.

29

XIex (A)

Extrinsic reverse base current.

30

Iavl (A)

Avalanche current.

31

IRE (A)

Current through emitter resistance.

32

IRBC (A)

Current through constant base resistance.

33

IRCC (A)

Current through collector contact resistance.

34

IRCBLX (A)

Current through extrinsic collector resistance.

35

IRCBLI (A)

Current through intrinsic collector resistance.

36

Qe (C)

Emitter charge or emitter neutral charge.

37

Qte (C)

Base-emitter depletion charge.

38

SQte (C)

Sidewall base-emitter depletion charge.

39

Qbe (C)

Base-emitter diffusion charge.

40

Qbc (C)

Base-collector diffusion charge.

41

Qtc (C)

Base-collector depletion charge.

42

Qepi (C)

Epilayer diffusion charge.

43

Qb1b2 (C)

AC current crowding charge.

44

Qtex (C)

Extrinsic base-collector depletion charge.

45

XQtex (C)

Extrinsic base-collector depletion charge.

46

Qex (C)

Extrinsic base-collector diffusion charge.

47

XQex (C)

Extrinsic base-collector diffusion charge.

48

gx (1/)

Forward transconductance.

49

gy (1/)

Reverse transconductance.

50

gz (1/)

Reverse transconductance.

51

Sgpi (1/)

Conductance sidewall b-e junction.

52

gpix (1/)

Conductance floor b-e junction.

53

gpiy (1/)

Early effect on recombination base current.

54

gpiz (1/)

Early effect on recombination base current.

55

gmux (1/)

Early effect on avalanche current limiting.

56

gmuy (1/)

Conductance of avalanche current.

57

gmuz (1/)

Conductance of avalanche current.

58

gmuex (1/)

Conductance extrinsic b-c junction.

59

Xgmuex (1/)

Conductance extrinsic b-c junction.

60

grcvy (1/)

Conductance of the epilayer current.

61

grcvz (1/)

Conductance of the epilayer current.

62

Rbv ()

Base resistance.

63

grbvx (1/)

Early-effect on base resistance.

64

grbvy (1/)

Early-effect on base resistance.

65

grbvz (1/)

Early-effect on base resistance:.

66

RE ()

Emitter resistance.

67

RBC ()

Constant part of the base resistance.

68

RCC ()

Collector contact resistance.

69

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

70

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

71

SCbe (F)

Capacitance sidewall b-e junction.

72

Cbex (F)

Capacitance floor b-e junction.

73

Cbey (F)

Early effect on b-e diffusion charge.

74

Cbez (F)

Early effect on b-e diffusion charge.

75

Cbcx (F)

Early effect on b-c diffusion charge.

76

Cbcy (F)

Capacitance floor b-c junction.

77

Cbcz (F)

Capacitance floor b-c junction.

78

Cbcex (F)

Capacitance extrinsic b-c junction.

79

XCbcex (F)

Capacitance extrinsic b-c junction.

80

Cb1b2 (F)

Capacitance AC current crowding.

81

Cb1b2x (F)

Cross-capacitance of the AC current crowding.

82

Cb1b2y (F)

Cross-capacitance of the AC current crowding.

83

Cb1b2z (F)

Cross-capacitance of the AC current crowding.

84

gm (1/)

Transconductance.

85

beta

Current amplification.

86

gout (1/)

Output conductance.

87

gmu (1/)

Feedback transconductance.

88

RB ()

Base resistance.

89

Cbe (F)

Base-emitter capacitance.

90

Cbc (F)

Base-collector capacitance.

91

fT (Hz)

Good approximation for cut-off frequency.

92

Iqs (A)

Current at onset of quasi-saturation.

93

XiWepi (M)

Thickness of injection layer.

94

Vb2c2star (V)

Physical value of internal base-collector bias.

95

Pdiss (W)

Dissipation.

96

pwr (W)

Power dissipation.

97

TK (K)

Actual temperature.

98

Isub (A)

Substrate current.

99

XIsub (A)

Substrate current.

100

Isf (A)

Substrate failure current.

101

Qts (C)

Collector-substrate depletion charge.

102

gS (1/)

Conductance parasitic PNP transistor.

103

XgS (1/)

Conductance parasitic PNP transistor.

104

gSf (1/)

Conductance of s-c junction.

105

Cts (F)

Capacitance s-c junction.

106

jtype

Type: +1=npn and -1=pnp.

107

w_estimate (M)

108

l_estimate (M)

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC      OP-5
SCbe      OP-71
dvgbr      M-66
mvt0      M-94
Cb1b2      OP-80
SIb1      OP-24
dvgte      M-73
nzeb      M-19
Cb1b2x      OP-81
SQte      OP-38
exavl      M-8
paramchk      M-2
Cb1b2y      OP-82
Sgpi      OP-51
exmod      M-6
pc      M-44
Cb1b2z      OP-83
TK      OP-97
exphi      M-7
pe      M-39
Cbc      OP-90
Vb1c1      OP-15
exsub      M-9
printscaled      I-2
Cbcex      OP-78
Vb1c4      OP-16
fT      OP-91
ps      M-87
Cbcx      OP-75
Vb2c1      OP-14
ftaun      M-81
pwr      OP-96
Cbcy      OP-76
Vb2c2      OP-13
gS      OP-102
rbc      M-28
Cbcz      OP-77
Vb2c2star      OP-94
gSf      OP-104
rbv      M-29
Cbe      OP-89
Vb2e1      OP-12
gm      OP-84
rcbli      M-32
Cbex      OP-72
Vbc      OP-7
gmu      OP-87
rcblx      M-31
Cbey      OP-73
Vbe      OP-6
gmuex      OP-58
rcc      M-30
Cbez      OP-74
Vbs      OP-10
gmux      OP-55
rcv      M-33
Cts      OP-105
Vc3c4      OP-17
gmuy      OP-56
re      M-27
IRBC      OP-32
Vc4c1      OP-18
gmuz      OP-57
region      I-4
IRCBLI      OP-35
Vce      OP-8
gout      OP-86
scrcv      M-34
IRCBLX      OP-34
Ve1e      OP-19
gpix      OP-52
sfh      M-26
IRCC      OP-33
Vsc      OP-11
gpiy      OP-53
taub      M-51
IRE      OP-31
Vse      OP-9
gpiz      OP-54
taue      M-50
Iavl      OP-30
XCbcex      OP-79
grbvx      OP-63
taur      M-53
Ib      OP-2
XIex      OP-29
grbvy      OP-64
tempeff      O-1
Ib1      OP-23
XIsub      OP-99
grbvz      OP-65
tepi      M-52
Ib1b2      OP-22
XQex      OP-47
grcvy      OP-60
tnom      M-95
Ib2      OP-26
XQtex      OP-45
grcvz      OP-61
tr      M-96
Ib3      OP-27
XgS      OP-103
gx      OP-48
tref      M-4
Ic      OP-1
Xgmuex      OP-59
gy      OP-49
trise      I-3
Ic1c2      OP-21
XiWepi      OP-93
gz      OP-50
tvgeb      M-72
Ie      OP-3
ab      M-59
ibf      M-15
type      M-92
Iex      OP-28
ac      M-63
ibr      M-21
vavl      M-25
In      OP-20
acbl      M-64
icss      M-83
vdc      M-43
Iqs      OP-92
ae      M-58
ihc      M-35
vde      M-38
Is      OP-4
aepi      M-61
ik      M-11
vds      M-86
Isf      OP-100
aex      M-62
iks      M-84
vef      M-13
Isub      OP-98
af      M-74
imax      M-93
ver      M-12
Izteb      OP-25
aqbo      M-57
is      M-10
vexlim      M-91
Pdiss      OP-95
area      I-6
iss      M-82
vgb      M-67
Qb1b2      OP-43
as      M-89
izeb      M-18
vgc      M-68
Qbc      OP-40
asub      M-90
jtype      OP-106
vgj      M-69
Qbe      OP-39
avgeb      M-71
kavl      M-77
vgs      M-88
Qe      OP-36
axi      M-36
kavlver      M-78
vgzeb      M-70
Qepi      OP-42
beta      OP-85
kc      M-79
vlr      M-22
Qex      OP-46
bf      M-14
ke      M-80
w_estimate      OP-107
Qtc      OP-41
bri      M-20
kf      M-75
wavl      M-24
Qte      OP-37
cbco      M-48
kfn      M-76
xcjc      M-47
Qtex      OP-44
cbeo      M-41
l_estimate      OP-108
xcje      M-40
Qts      OP-101
cjc      M-42
level      M-1
xext      M-23
RB      OP-88
cje      M-37
m      I-5
xibi      M-17
RBC      OP-67
cjs      M-85
mc      M-46
xp      M-45
RCBLI      OP-70
compatible      M-97
meff      O-2
xqb      M-56
RCBLX      OP-69
dais      M-60
mexlev      M-3
xrec      M-55
RCC      OP-68
deg      M-54
mlf      M-16
RE      OP-66
dta      M-5
mtau      M-49
Rbv      OP-62
dvgbf      M-65
mult      I-1

Compact Bipolar-Transistor Model (bjt504t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt504t parameter=value ...

Model Parameters

1

level=504

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

exsub=0

Flag for extended modelling of substrate currents.

10

is=2.2e-17 A

Collector-emitter saturation current.

11

ik=0.1 A

Collector-emitter high injection knee current.

12

ver=2.5 V

Reverse Early voltage.

13

vef=44 V

Forward Early voltage.

14

bf=215

Ideal forward current gain.

15

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

16

mlf=2

Non ideality factor of the non-ideal forward base current.

17

xibi=0

Part of ideal base current that belongs to the sidewall.

18

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

19

nzeb=22

Coefficient of emitter-base Zener tunneling current.

20

bri=7

Ideal reverse current gain.

21

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

22

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

23

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

24

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

25

vavl=3 V

Voltage determining curvature of avalanche current.

26

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

27

re=5

Emitter resistance.

28

rbc=23

Constant part of the base resistance.

29

rbv=18

Zero-bias value of the variable part of the base resistance.

30

rcc=12

Collector contact resistance.

31

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

32

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

33

rcv=150

Resistance of the un-modulated epilayer.

34

scrcv=1.25e+03

Space charge resistance of the epilayer.

35

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

36

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

37

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

38

vde=0.95 V

Emitter-base diffusion voltage.

39

pe=0.4

Emitter-base grading coefficient.

40

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

41

cbeo=0

Emitter-base overlap capacitance.

42

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

43

vdc=0.68 V

Collector-base diffusion voltage.

44

pc=0.5

Collector-base grading coefficient.

45

xp=0.35

Constant part of Cjc.

46

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

47

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

48

cbco=0

Collector-base overlap capacitance.

49

mtau=1

Non-ideality factor of the emitter stored charge.

50

taue=2e-12 s

Minimum transit time of stored emitter charge.

51

taub=4.2e-12 s

Transit time of stored base charge.

52

tepi=4.1e-11 s

Transit time of stored epilayer charge.

53

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

54

deg=0 eV

Bandgap difference over the base.

55

xrec=0

Pre-factor of the recombination part of Ib1.

56

xqb=0.333

Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).

57

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

58

ae=0

Temperature coefficient of the resistivity of the emitter.

59

ab=1

Temperature coefficient of the resistivity of the base.

60

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

61

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

62

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

63

ac=2

Temperature coefficient of the resistivity of the collector contact.

64

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

65

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

66

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

67

vgb=1.17 V

Bandgap voltage of the base.

68

vgc=1.18 V

Bandgap voltage of the collector.

69

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

70

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

71

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

72

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

73

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

74

af=2

Exponent of the Flicker-noise.

75

kf=2e-11

Flicker-noise coefficient of the ideal base current.

76

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

77

kavl=0

Switch for white noise contribution due to avalanche.

78

kavlver=504

Switch for avalanche noise of 504.11 and 504.12.

79

kc=0

Switch for RF correlation noise model selection.

80

ke=0

Fraction of QE in excess phase shift.

81

ftaun=0

Fraction of noise transit time to total transit time.

82

iss=4.8e-17 A

Base-substrate saturation current.

83

icss=-1 A

Collector-substrate ideal saturation current.

84

iks=0.00025 A

Base-substrate high injection knee current.

85

cjs=3.15e-13 F

Zero-bias collector-substrate depletion capacitance.

86

vds=0.62 V

Collector-substrate diffusion voltage.

87

ps=0.34

Collector-substrate grading coefficient.

88

vgs=1.2 V

Band-gap voltage of the substrate.

89

as=1.58

For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.

90

asub=2

Temperature coefficient for mobility of minorities in the substrate.

91

rth=300 K/W

Thermal resistance.

92

cth=3e-09 J/K

Thermal capacitance.

93

ath=0

Temperature coefficient of the thermal resistance.

94

vexlim=400

Upper limit of exp() function argument for convergence.

95

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

96

imax=1000 A

Explosion current.

97

mvt0=0.0

Threshold mismatch intercept.

98

tnom (deg. C)

Alias of tnom.

99

tr (deg. C)

Alias of tnom.

100

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

Is (A)

External DC substrate current.

5

BetaDC

External DC current gain Ic/Ib.

6

Vbe (V)

External base-emitter bias.

7

Vbc (V)

External base-collector bias.

8

Vce (V)

External collector-emitter bias.

9

Vse (V)

External substrate-emitter bias.

10

Vbs (V)

External base-substrate bias.

11

Vsc (V)

External substrate-collector bias.

12

Vb2e1 (V)

Internal base-emitter bias.

13

Vb2c2 (V)

Internal base-collector bias.

14

Vb2c1 (V)

Internal base-collector bias including epilayer.

15

Vb1c1 (V)

External base-collector bias without contact resistances.

16

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

17

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

18

Vc4c1 (V)

Bias over intrinsic buried layer.

19

Ve1e (V)

Bias over emitter resistance.

20

In (A)

Main current.

21

Ic1c2 (A)

Epilayer current.

22

Ib1b2 (A)

Pinched-base current.

23

Ib1 (A)

Ideal forward base current.

24

SIb1 (A)

Ideal side-wall base current.

25

Izteb (A)

Zener tunneling current in the emitter base junction.

26

Ib2 (A)

Non-ideal forward base current.

27

Ib3 (A)

Non-ideal reverse base current.

28

Iex (A)

Extrinsic reverse base current.

29

XIex (A)

Extrinsic reverse base current.

30

Iavl (A)

Avalanche current.

31

IRE (A)

Current through emitter resistance.

32

IRBC (A)

Current through constant base resistance.

33

IRCC (A)

Current through collector contact resistance.

34

IRCBLX (A)

Current through extrinsic collector resistance.

35

IRCBLI (A)

Current through intrinsic collector resistance.

36

Qe (C)

Emitter charge or emitter neutral charge.

37

Qte (C)

Base-emitter depletion charge.

38

SQte (C)

Sidewall base-emitter depletion charge.

39

Qbe (C)

Base-emitter diffusion charge.

40

Qbc (C)

Base-collector diffusion charge.

41

Qtc (C)

Base-collector depletion charge.

42

Qepi (C)

Epilayer diffusion charge.

43

Qb1b2 (C)

AC current crowding charge.

44

Qtex (C)

Extrinsic base-collector depletion charge.

45

XQtex (C)

Extrinsic base-collector depletion charge.

46

Qex (C)

Extrinsic base-collector diffusion charge.

47

XQex (C)

Extrinsic base-collector diffusion charge.

48

gx (1/)

Forward transconductance.

49

gy (1/)

Reverse transconductance.

50

gz (1/)

Reverse transconductance.

51

Sgpi (1/)

Conductance sidewall b-e junction.

52

gpix (1/)

Conductance floor b-e junction.

53

gpiy (1/)

Early effect on recombination base current.

54

gpiz (1/)

Early effect on recombination base current.

55

gmux (1/)

Early effect on avalanche current limiting.

56

gmuy (1/)

Conductance of avalanche current.

57

gmuz (1/)

Conductance of avalanche current.

58

gmuex (1/)

Conductance extrinsic b-c junction.

59

Xgmuex (1/)

Conductance extrinsic b-c junction.

60

grcvy (1/)

Conductance of the epilayer current.

61

grcvz (1/)

Conductance of the epilayer current.

62

Rbv ()

Base resistance.

63

grbvx (1/)

Early-effect on base resistance.

64

grbvy (1/)

Early-effect on base resistance.

65

grbvz (1/)

Early-effect on base resistance:.

66

RE ()

Emitter resistance.

67

RBC ()

Constant part of the base resistance.

68

RCC ()

Collector contact resistance.

69

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

70

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

71

SCbe (F)

Capacitance sidewall b-e junction.

72

Cbex (F)

Capacitance floor b-e junction.

73

Cbey (F)

Early effect on b-e diffusion charge.

74

Cbez (F)

Early effect on b-e diffusion charge.

75

Cbcx (F)

Early effect on b-c diffusion charge.

76

Cbcy (F)

Capacitance floor b-c junction.

77

Cbcz (F)

Capacitance floor b-c junction.

78

Cbcex (F)

Capacitance extrinsic b-c junction.

79

XCbcex (F)

Capacitance extrinsic b-c junction.

80

Cb1b2 (F)

Capacitance AC current crowding.

81

Cb1b2x (F)

Cross-capacitance of the AC current crowding.

82

Cb1b2y (F)

Cross-capacitance of the AC current crowding.

83

Cb1b2z (F)

Cross-capacitance of the AC current crowding.

84

gm (1/)

Transconductance.

85

beta

Current amplification.

86

gout (1/)

Output conductance.

87

gmu (1/)

Feedback transconductance.

88

RB ()

Base resistance.

89

Cbe (F)

Base-emitter capacitance.

90

Cbc (F)

Base-collector capacitance.

91

fT (Hz)

Good approximation for cut-off frequency.

92

Iqs (A)

Current at onset of quasi-saturation.

93

XiWepi (M)

Thickness of injection layer.

94

Vb2c2star (V)

Physical value of internal base-collector bias.

95

Pdiss (W)

Dissipation.

96

pwr (W)

Power dissipation.

97

TK (K)

Actual temperature.

98

Isub (A)

Substrate current.

99

XIsub (A)

Substrate current.

100

Isf (A)

Substrate failure current.

101

Qts (C)

Collector-substrate depletion charge.

102

gS (1/)

Conductance parasitic PNP transistor.

103

XgS (1/)

Conductance parasitic PNP transistor.

104

gSf (1/)

Conductance of s-c junction.

105

Cts (F)

Capacitance s-c junction.

106

jtype

Type: +1=npn and -1=pnp.

107

w_estimate (M)

108

l_estimate (M)

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC      OP-5
SCbe      OP-71
dta      M-5
mtau      M-49
Cb1b2      OP-80
SIb1      OP-24
dvgbf      M-65
mult      I-1
Cb1b2x      OP-81
SQte      OP-38
dvgbr      M-66
mvt0      M-97
Cb1b2y      OP-82
Sgpi      OP-51
dvgte      M-73
nzeb      M-19
Cb1b2z      OP-83
TK      OP-97
exavl      M-8
paramchk      M-2
Cbc      OP-90
Vb1c1      OP-15
exmod      M-6
pc      M-44
Cbcex      OP-78
Vb1c4      OP-16
exphi      M-7
pe      M-39
Cbcx      OP-75
Vb2c1      OP-14
exsub      M-9
printscaled      I-2
Cbcy      OP-76
Vb2c2      OP-13
fT      OP-91
ps      M-87
Cbcz      OP-77
Vb2c2star      OP-94
ftaun      M-81
pwr      OP-96
Cbe      OP-89
Vb2e1      OP-12
gS      OP-102
rbc      M-28
Cbex      OP-72
Vbc      OP-7
gSf      OP-104
rbv      M-29
Cbey      OP-73
Vbe      OP-6
gm      OP-84
rcbli      M-32
Cbez      OP-74
Vbs      OP-10
gmu      OP-87
rcblx      M-31
Cts      OP-105
Vc3c4      OP-17
gmuex      OP-58
rcc      M-30
IRBC      OP-32
Vc4c1      OP-18
gmux      OP-55
rcv      M-33
IRCBLI      OP-35
Vce      OP-8
gmuy      OP-56
re      M-27
IRCBLX      OP-34
Ve1e      OP-19
gmuz      OP-57
region      I-4
IRCC      OP-33
Vsc      OP-11
gout      OP-86
rth      M-91
IRE      OP-31
Vse      OP-9
gpix      OP-52
scrcv      M-34
Iavl      OP-30
XCbcex      OP-79
gpiy      OP-53
sfh      M-26
Ib      OP-2
XIex      OP-29
gpiz      OP-54
taub      M-51
Ib1      OP-23
XIsub      OP-99
grbvx      OP-63
taue      M-50
Ib1b2      OP-22
XQex      OP-47
grbvy      OP-64
taur      M-53
Ib2      OP-26
XQtex      OP-45
grbvz      OP-65
tempeff      O-1
Ib3      OP-27
XgS      OP-103
grcvy      OP-60
tepi      M-52
Ic      OP-1
Xgmuex      OP-59
grcvz      OP-61
tnom      M-98
Ic1c2      OP-21
XiWepi      OP-93
gx      OP-48
tr      M-99
Ie      OP-3
ab      M-59
gy      OP-49
tref      M-4
Iex      OP-28
ac      M-63
gz      OP-50
trise      I-3
In      OP-20
acbl      M-64
ibf      M-15
tvgeb      M-72
Iqs      OP-92
ae      M-58
ibr      M-21
type      M-95
Is      OP-4
aepi      M-61
icss      M-83
vavl      M-25
Isf      OP-100
aex      M-62
ihc      M-35
vdc      M-43
Isub      OP-98
af      M-74
ik      M-11
vde      M-38
Izteb      OP-25
aqbo      M-57
iks      M-84
vds      M-86
Pdiss      OP-95
area      I-6
imax      M-96
vef      M-13
Qb1b2      OP-43
as      M-89
is      M-10
ver      M-12
Qbc      OP-40
asub      M-90
iss      M-82
vexlim      M-94
Qbe      OP-39
ath      M-93
izeb      M-18
vgb      M-67
Qe      OP-36
avgeb      M-71
jtype      OP-106
vgc      M-68
Qepi      OP-42
axi      M-36
kavl      M-77
vgj      M-69
Qex      OP-46
beta      OP-85
kavlver      M-78
vgs      M-88
Qtc      OP-41
bf      M-14
kc      M-79
vgzeb      M-70
Qte      OP-37
bri      M-20
ke      M-80
vlr      M-22
Qtex      OP-44
cbco      M-48
kf      M-75
w_estimate      OP-107
Qts      OP-101
cbeo      M-41
kfn      M-76
wavl      M-24
RB      OP-88
cjc      M-42
l_estimate      OP-108
xcjc      M-47
RBC      OP-67
cje      M-37
level      M-1
xcje      M-40
RCBLI      OP-70
cjs      M-85
m      I-5
xext      M-23
RCBLX      OP-69
compatible      M-100
mc      M-46
xibi      M-17
RCC      OP-68
cth      M-92
meff      O-2
xp      M-45
RE      OP-66
dais      M-60
mexlev      M-3
xqb      M-56
Rbv      OP-62
deg      M-54
mlf      M-16
xrec      M-55

Compact Bipolar-Transistor Model (bjt505)

This is SimKit 5.0.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1

dta=0 degC

Difference between the local and global ambient temperatures.

2

mult=1

Multiplication factor.

3

printscaled=0

Print scaled parameter info if value not equal to zero.

4

trise=0

Difference between the local ambient and global ambient temperature.

5

region=fwd

Estimated DC operating region, used as a convergence aid.Possible values are off, sat, rev,  and fwd.

6

m=1

Alias of mult.

7

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt505 parameter=value ...

Model Parameters

1

level=505

Model level.

2

paramchk=0

Level of clip warning info.

3

version=505

Model version.

4

type=npn

Flag for NPN (1) or PNP (-1) transistor type.Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

5

tref=25 degC

Reference temperature.

6

exmod=1

Flag for extended modeling of the reverse current gain.

7

exphi=1

Flag for distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modeling of avalanche currents.

9

exsub=1

Flag for extended modeling of substrate currents.

10

is=2.2e-17 A

Saturation current of main current.

11

nff=1

Non-ideality factor of forward main current.

12

nfr=1

Non-ideality factor of reverse main current.

13

ik=0.1 A

CE high injection knee current.

14

ver=2.5 V

Reverse Early voltage.

15

vef=44 V

Forward Early voltage.

16

ibi=1e-19 A

Saturation current of ideal base current.

17

nbi=1

Non-ideality factor of ideal base current.

18

ibis=0 A

Saturation current of ideal side wall base current.

19

nbis=1

Non-ideality factor of ideal side wall base current.

20

ibf=2.7e-15 A

Saturation current of non-ideal forward base current.

21

mlf=2

Non-ideality factor of non-ideal forward base current.

22

ibfs=0 A

Saturation current of non-ideal side wall forward base current.

23

mlfs=2

Non-ideality factor of non-ideal side wall forward base current.

24

ibx=3.14e-18 A

Saturation current of extrinsic reverse base current.

25

ikbx=0.0143 A

Extrinsic CB high injection knee current.

26

ibr=1e-15 A

Saturation current of non-ideal reverse base current.

27

mlr=2

Non-ideality factor of non-ideal reverse base current.

28

xext=0.63

Part of currents and charges that belong to extrinsic region.

29

izeb=0 A

Pre-factor of EB Zener tunneling current.

30

nzeb=22

Coefficient of EB Zener tunneling current.

31

izcb=0 A

Pre-factor of CB Zener tunneling current.

32

nzcb=22

Coefficient of CB Zener tunneling current.

33

swavl=1

Switch of avalanche factor Gem model.

34

aavl=400

aavl of swavl=1 Gem model.

35

cavl=-0.37

cavl of swavl=1 Gem model.

36

itoavl=0.5 A

Current dependence parameter of swavl=1 Gem model.

37

bavl=25

bavl of swavl=1 Gem model.

38

vdcavl=0.1 V

CB diffusion voltage dedicated for swavl=1 Gem model.

39

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

40

vavl=3 V

Voltage determining curvature of avalanche current.

41

sfh=0.3

Current spreading factor of avalanche model when exavl=1.

42

re=5

Emitter resistance.

43

rbc=23

Constant part of base resistance.

44

rbv=18

Zero-bias value of variable part of the base resistance.

45

rcc=12

Constant part of collector resistance.

46

rcblx=0

Resistance Collector Buried Layer extrinsic.

47

rcbli=0

Resistance Collector Buried Layer Intrinsic.

48

rcv=150

Resistance of un-modulated epilayer.

49

scrcv=1.25e+03

Space charge resistance of epilayer.

50

ihc=0.004 A

Critical current for velocity saturation in epilayer.

51

axi=0.3

Smoothness parameter for onset of quasi-saturation.

52

vdc=0.68 V

CB diffusion voltage.

53

cje=7.3e-14 F

Zero-bias EB depletion capacitance.

54

vde=0.95 V

EB diffusion voltage.

55

pe=0.4

EB grading coefficient.

56

xcje=0.4

Sidewall fraction of EB depletion capacitance.

57

cbeo=0 F

EB overlap capacitance.

58

cjc=7.8e-14 F

Zero-bias CB depletion capacitance.

59

vdcctc=0.68 V

CB diffusion voltage of depletion capacitance.

60

pc=0.5

CB grading coefficient.

61

swvchc=0

Switch of Vch for CB depletion capacitance.

62

swvjunc=0

Switch of Vjunc for collector junction capacitance.

63

xp=0.35

Constant part of Cjc.

64

mc=0.5

Coefficient for current modulation of CB depletion capacitance.

65

xcjc=0.032

Fraction of CB depletion capacitance under the emitter.

66

cbco=0 F

CB overlap capacitance.

67

mtau=1

Non-ideality factor of emitter stored charge.

68

taue=2e-12 s

Minimum transit time of stored emitter charge.

69

taub=4.2e-12 s

Transit time of stored base charge.

70

tepi=4.1e-11 s

Transit time of stored epilayer charge.

71

taur=5.2e-10 s

Transit time of reverse extrinsic stored base charge.

72

deg=0 eV

Bandgap difference over the base.

73

xrec=0

Pre-factor of the recombination part of Ib1.

74

xqb=0.333

Emitter-fraction of base diffusion charge.

75

ke=0

Fraction of QE in excess phase shift.

76

aqbo=0.3

Temperature coefficient of zero-bias base charge.

77

ae=0

Temperature coefficient of resistivity of the emitter.

78

ab=1

Temperature coefficient of resistivity of the base.

79

aepi=2.5

Temperature coefficient of resistivity of the epilayer.

80

aex=0.62

Temperature coefficient of resistivity of the extrinsic base.

81

ac=2

Temperature coefficient of resistivity of the collector contact.

82

acx=1.3

Temperature coefficient of extrinsic reverse base current.

83

acbl=2

Temperature coefficient of resistivity of the collector buried layer.

84

vgb=1.17 V

Band-gap voltage of base.

85

vgc=1.18 V

Band-gap voltage of collector.

86

vge=1.12 V

Band-gap voltage of emitter.

87

vgcx=1.12 V

Band-gap voltage of extrinsic collector.

88

vgj=1.15 V

Band-gap voltage recombination EB junction.

89

vgzeb=1.15 V

Band-gap voltage at Tref for EB tunneling.

90

avgeb=0.000473 V/K

Temperature coefficient of band-gap voltage for EB tunneling.

91

tvgeb=636 K

Temperature coefficient of band-gap voltage for EB tunneling.

92

vgzcb=1.15 V

Band-gap voltage at Tref for CB tunneling.

93

avgcb=0.000473 V/K

Temperature coefficient of band-gap voltage for CB tunneling.

94

tvgcb=636 K

Temperature coefficient of band-gap voltage for CB tunneling.

95

dvgte=0.05 V

Band-gap voltage difference of emitter stored charge.

96

dais=0

Fine tuning of temperature dependence of CE saturation current.

97

tnff=0 /K

Temperature coefficient of nff.

98

tnfr=0 /K

Temperature coefficient of nfr.

99

tbavl=0.0005

Temperature scaling parameter of bavl when swavl=1.

100

af=2

Exponent of Flicker-noise of ideal base current.

101

afn=2

Exponent of Flicker-noise of non-ideal base current.

102

kf=2e-11

Flicker-noise coefficient of ideal base current.

103

kfn=2e-11

Flicker-noise coefficient of non-ideal base current.

104

kavl=0

Switch for white noise contribution due to avalanche.

105

kc=0

Switch for RF correlation noise model selection.

106

ftaun=0

Fraction of noise transit time to total transit time.

107

iss=4.8e-17 A

Saturation current of parasitic BCS transistor main current.

108

icss=0 A

CS ideal saturation current.

109

iks=0.000545 A

Knee current for BCS transistor main current.

110

cjs=3.15e-13 F

Zero-bias CS depletion capacitance.

111

vds=0.62 V

CS diffusion voltage.

112

ps=0.34

CS grading coefficient.

113

vgs=1.2 V

Band-gap voltage of the substrate.

114

as=1.58

Substrate temperature coefficient.

115

asub=2

Temperature coefficient for mobility of minorities in the substrate.

116

isibrel=0 A

Saturation current of base current for reliability simulation.

117

nfibrel=2

Non-ideality factor of base current for reliability simulation.

118

gmin=1e-13

Minimum conductance.

119

imax=1000 A

Explosion current.

120

tnom (degC)

Parameters measurement temperature.

121

tr (degC)

Alias of tnom.

122

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica,  and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

jtype

type: +1=npn and -1=pnp.

2

r_e ()

Emitter resistance.

3

rb_c ()

Constant base resistance.

4

rc_c ()

Collector contact resistance.

5

rc_blx ()

Extrinsic buried layer resistance.

6

rc_bli ()

Intrinsic buried layer resistance.

7

rc ()

Collector resistance.

8

tk (K)

Actual temperature.

9

ic (A)

External DC collector current.

10

ib (A)

External DC base current.

11

betadc

External DC current gain Ic/Ib.

12

ie (A)

External DC emitter current.

13

vbe (V)

External base-emitter bias.

14

vce (V)

External collector-emitter bias.

15

vbc (V)

External base-collector bias.

16

isx (A)

External DC substrate current.

17

vse (V)

External substrate-emitter bias.

18

vbs (V)

External base-substrate bias.

19

vsc (V)

External substrate-collector bias.

20

vb2e1 (V)

Internal base-emitter bias.

21

vb2c2 (V)

Internal base-collector bias.

22

vb2c1 (V)

Internal base-collector bias including epilayer.

23

vb1c1 (V)

External base-collector bias without contact resistances.

24

vc4c1 (V)

Bias over intrinsic buried layer.

25

vc3c4 (V)

Bias over extrinsic buried layer.

26

ve1e (V)

Bias over emitter resistance.

27

in (A)

Main current.

28

ic1c2 (A)

Epilayer current.

29

ib1b2 (A)

Pinched-base current.

30

ib1 (A)

Ideal forward base current.

31

ib1s (A)

Ideal side-wall base current.

32

ib2s (A)

Non-ideal side-wall base current.

33

ibrel (A)

Additional non-ideal base current for reliability simulation.

34

izteb (A)

Zener tunneling current in the emitter base junction.

35

iztcb (A)

Zener tunneling current in the collector base junction.

36

ib2 (A)

Non-ideal forward base current.

37

ib3 (A)

Non-ideal reverse base current.

38

iavl (A)

Avalanche current.

39

iex (A)

Extrinsic reverse base current.

40

xiex (A)

Extrinsic reverse base current.

41

isub (A)

Substrate current.

42

xisub (A)

Substrate current.

43

isf (A)

Substrate failure current.

44

ire (A)

Current through emitter resistance.

45

irbc (A)

Current through constant base resistance.

46

ircblx (A)

Current through extrinsic buried layer resistance.

47

ircbli (A)

Current through intrinsic buried layer resistance.

48

ircc (A)

Current through collector contact resistance.

49

qe (coul)

Emitter charge or emitter neutral charge.

50

qte (coul)

Base-emitter depletion charge.

51

sqte (coul)

Sidewall base-emitter depletion charge.

52

qbe (coul)

Base-emitter diffusion charge.

53

qbc (coul)

Base_collector diffusion charge.

54

qtc (coul)

Base-collector depletion charge.

55

qepi (coul)

Epilayer diffusion charge.

56

qb1b2 (coul)

ac current crowding charge.

57

qtex (coul)

Extrinsic base-collector depletion charge.

58

xqtex (coul)

Extrinsic base-collector depletion charge.

59

qex (coul)

Extrinsic base-collector diffusion charge.

60

xqex (coul)

Extrinsic base-collector diffusion charge.

61

qts (coul)

Collector-substrate depletion charge.

62

gx (S)

Forward transconductance.

63

gy (S)

Reverse transconductance.

64

gz (S)

Reverse transconductance.

65

sgpi (S)

Conductance sidewall b-e junction.

66

gpix (S)

Conductance floor b-e junction.

67

gpiy (S)

Early effect on recombination base current.

68

gpiz (S)

Early effect on recombination base current.

69

gmux (S)

Early effect on avalanche current limiting.

70

gmuy (S)

Conductance of avalanche current.

71

gmuz (S)

Conductance of avalanche current.

72

gmuex (S)

Conductance of extrinsic b-c junction.

73

xgmuex (S)

Conductance of extrinsic b-c junction.

74

grcvy (S)

Conductance of epilayer current.

75

grcvz (S)

Conductance of epilayer current.

76

rb_v ()

Variable base resistance.

77

grbvx (S)

Early effect on variable base resistance.

78

grbvy (S)

Early effect on variable base resistance.

79

grbvz (S)

Early effect on variable base resistance.

80

gs (S)

Conductance parasitic PNP transistor.

81

xgs (S)

Conductance parasitic PNP transistor.

82

gsf (S)

Conductance substrate failure current.

83

scbe (F)

Capacitance sidewall b-e junction.

84

cbex (F)

Capacitance floor b-e junction.

85

cbey (F)

Early effect on b-e diffusion charge.

86

cbez (F)

Early effect on b-e diffusion charge.

87

cbcx (F)

Early effect on b-c diffusion charge.

88

cbcy (F)

Capacitance floor b-c junction.

89

cbcz (F)

Capacitance floor b-c junction.

90

cbcex (F)

Capacitance extrinsic b-c junction.

91

xcbcex (F)

Capacitance extrinsic b-c junction.

92

cb1b2 (F)

Capacitance AC current crowding.

93

cb1b2x (F)

Cross-capacitance AC current crowding.

94

cb1b2y (F)

Cross-capacitance AC current crowding.

95

cb1b2z (F)

Cross-capacitance AC current crowding.

96

cts (F)

Capacitance s-c junction.

97

gm (S)

transconductance.

98

beta

Current amplification.

99

gout (S)

Output conductance.

100

gmu (S)

Feedback transconductance.

101

rb ()

Base resistance.

102

cbe (F)

Base-emitter capacitance.

103

cbc (F)

Base-collector capacitance.

104

ft (Hz)

Good approximation for cut-off frequency.

105

iqs (A)

Current at onset of quasi-saturation.

106

xiwepi

Thickness of injection layer normalized to epi layer width.

107

vb2c2star (V)

Physical value of internal base-collector bias

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

aavl      M-34
gpiy      OP-67
kfn      M-103
tempeff      O-1
ab      M-78
gpiz      OP-68
level      M-1
tepi      M-70
ac      M-81
grbvx      OP-77
m      I-6
tk      OP-8
acbl      M-83
grbvy      OP-78
mc      M-64
tnff      M-97
acx      M-82
grbvz      OP-79
meff      O-2
tnfr      M-98
ae      M-77
grcvy      OP-74
mlf      M-21
tnom      M-120
aepi      M-79
grcvz      OP-75
mlfs      M-23
tr      M-121
aex      M-80
gs      OP-80
mlr      M-27
tref      M-5
af      M-100
gsf      OP-82
mtau      M-67
trise      I-4
afn      M-101
gx      OP-62
mult      I-2
tvgcb      M-94
aqbo      M-76
gy      OP-63
nbi      M-17
tvgeb      M-91
area      I-7
gz      OP-64
nbis      M-19
type      M-4
as      M-114
iavl      OP-38
nff      M-11
vavl      M-40
asub      M-115
ib      OP-10
nfibrel      M-117
vb1c1      OP-23
avgcb      M-93
ib1      OP-30
nfr      M-12
vb2c1      OP-22
avgeb      M-90
ib1b2      OP-29
nzcb      M-32
vb2c2      OP-21
axi      M-51
ib1s      OP-31
nzeb      M-30
vb2c2star      OP-107
bavl      M-37
ib2      OP-36
paramchk      M-2
vb2e1      OP-20
beta      OP-98
ib2s      OP-32
pc      M-60
vbc      OP-15
betadc      OP-11
ib3      OP-37
pe      M-55
vbe      OP-13
cavl      M-35
ibf      M-20
printscaled      I-3
vbs      OP-18
cb1b2      OP-92
ibfs      M-22
ps      M-112
vc3c4      OP-25
cb1b2x      OP-93
ibi      M-16
qb1b2      OP-56
vc4c1      OP-24
cb1b2y      OP-94
ibis      M-18
qbc      OP-53
vce      OP-14
cb1b2z      OP-95
ibr      M-26
qbe      OP-52
vdc      M-52
cbc      OP-103
ibrel      OP-33
qe      OP-49
vdcavl      M-38
cbcex      OP-90
ibx      M-24
qepi      OP-55
vdcctc      M-59
cbco      M-66
ic      OP-9
qex      OP-59
vde      M-54
cbcx      OP-87
ic1c2      OP-28
qtc      OP-54
vds      M-111
cbcy      OP-88
icss      M-108
qte      OP-50
ve1e      OP-26
cbcz      OP-89
ie      OP-12
qtex      OP-57
vef      M-15
cbe      OP-102
iex      OP-39
qts      OP-61
ver      M-14
cbeo      M-57
ihc      M-50
r_e      OP-2
version      M-3
cbex      OP-84
ik      M-13
rb      OP-101
vgb      M-84
cbey      OP-85
ikbx      M-25
rb_c      OP-3
vgc      M-85
cbez      OP-86
iks      M-109
rb_v      OP-76
vgcx      M-87
cjc      M-58
imax      M-119
rbc      M-43
vge      M-86
cje      M-53
in      OP-27
rbv      M-44
vgj      M-88
cjs      M-110
iqs      OP-105
rc      OP-7
vgs      M-113
compatible      M-122
irbc      OP-45
rc_bli      OP-6
vgzcb      M-92
cts      OP-96
ircbli      OP-47
rc_blx      OP-5
vgzeb      M-89
dais      M-96
ircblx      OP-46
rc_c      OP-4
vsc      OP-19
deg      M-72
ircc      OP-48
rcbli      M-47
vse      OP-17
dta      I-1
ire      OP-44
rcblx      M-46
wavl      M-39
dvgte      M-95
is      M-10
rcc      M-45
xcbcex      OP-91
exavl      M-8
isf      OP-43
rcv      M-48
xcjc      M-65
exmod      M-6
isibrel      M-116
re      M-42
xcje      M-56
exphi      M-7
iss      M-107
region      I-5
xext      M-28
exsub      M-9
isub      OP-41
scbe      OP-83
xgmuex      OP-73
ft      OP-104
isx      OP-16
scrcv      M-49
xgs      OP-81
ftaun      M-106
itoavl      M-36
sfh      M-41
xiex      OP-40
gm      OP-97
izcb      M-31
sgpi      OP-65
xisub      OP-42
gmin      M-118
izeb      M-29
sqte      OP-51
xiwepi      OP-106
gmu      OP-100
iztcb      OP-35
swavl      M-33
xp      M-63
gmuex      OP-72
izteb      OP-34
swvchc      M-61
xqb      M-74
gmux      OP-69
jtype      OP-1
swvjunc      M-62
xqex      OP-60
gmuy      OP-70
kavl      M-104
taub      M-69
xqtex      OP-58
gmuz      OP-71
kc      M-105
taue      M-68
xrec      M-73
gout      OP-99
ke      M-75
taur      M-71
gpix      OP-66
kf      M-102
tbavl      M-99

Compact Bipolar-Transistor Model (bjt505t)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1

dta=0 degC

Difference between the local and global ambient temperatures.

2

mult=1

Multiplication factor.

3

printscaled=0

Print scaled parameter info if value not equal to zero.

4

trise=0

Difference between the local ambient and global ambient temperature.

5

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

6

m=1

Alias of mult.

7

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjt505t parameter=value ...

Model Parameters

1

level=505

Model level.

2

paramchk=0

Level of clip warning info.

3

version=505

Model version.

4

type=npn

Flag for NPN (1) or PNP (-1) transistor type.Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

5

tref=25 degC

Reference temperature.

6

exmod=1

Flag for extended modeling of the reverse current gain.

7

exphi=1

Flag for distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modeling of avalanche currents.

9

exsub=1

Flag for extended modeling of substrate currents.

10

is=2.2e-17 A

Saturation current of main current.

11

nff=1

Non-ideality factor of forward main current.

12

nfr=1

Non-ideality factor of reverse main current.

13

ik=0.1 A

CE high injection knee current.

14

ver=2.5 V

Reverse Early voltage.

15

vef=44 V

Forward Early voltage.

16

ibi=1e-19 A

Saturation current of ideal base current.

17

nbi=1

Non-ideality factor of ideal base current.

18

ibis=0 A

Saturation current of ideal side wall base current.

19

nbis=1

Non-ideality factor of ideal side wall base current.

20

ibf=2.7e-15 A

Saturation current of non-ideal forward base current.

21

mlf=2

Non-ideality factor of non-ideal forward base current.

22

ibfs=0 A

Saturation current of non-ideal side wall forward base current.

23

mlfs=2

Non-ideality factor of non-ideal side wall forward base current.

24

ibx=3.14e-18 A

Saturation current of extrinsic reverse base current.

25

ikbx=0.0143 A

Extrinsic CB high injection knee current.

26

ibr=1e-15 A

Saturation current of non-ideal reverse base current.

27

mlr=2

Non-ideality factor of non-ideal reverse base current.

28

xext=0.63

Part of currents and charges that belong to extrinsic region.

29

izeb=0 A

Pre-factor of EB Zener tunneling current.

30

nzeb=22

Coefficient of EB Zener tunneling current.

31

izcb=0 A

Pre-factor of CB Zener tunneling current.

32

nzcb=22

Coefficient of CB Zener tunneling current.

33

swavl=1

Switch of avalanche factor Gem model.

34

aavl=400

aavl of swavl=1 Gem model.

35

cavl=-0.37

cavl of swavl=1 Gem model.

36

itoavl=0.5 A

Current dependence parameter of swavl=1 Gem model.

37

bavl=25

bavl of swavl=1 Gem model.

38

vdcavl=0.1 V

CB diffusion voltage dedicated for swavl=1 Gem model.

39

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

40

vavl=3 V

Voltage determining curvature of avalanche current.

41

sfh=0.3

Current spreading factor of avalanche model when exavl=1.

42

re=5

Emitter resistance.

43

rbc=23

Constant part of base resistance.

44

rbv=18

Zero-bias value of variable part of the base resistance.

45

rcc=12

Constant part of collector resistance.

46

rcblx=0

Resistance Collector Buried Layer extrinsic.

47

rcbli=0

Resistance Collector Buried Layer Intrinsic.

48

rcv=150

Resistance of un-modulated epilayer.

49

scrcv=1.25e+03

Space charge resistance of epilayer.

50

ihc=0.004 A

Critical current for velocity saturation in epilayer.

51

axi=0.3

Smoothness parameter for onset of quasi-saturation.

52

vdc=0.68 V

CB diffusion voltage.

53

cje=7.3e-14 F

Zero-bias EB depletion capacitance.

54

vde=0.95 V

EB diffusion voltage.

55

pe=0.4

EB grading coefficient.

56

xcje=0.4

Sidewall fraction of EB depletion capacitance.

57

cbeo=0 F

EB overlap capacitance.

58

cjc=7.8e-14 F

Zero-bias CB depletion capacitance.

59

vdcctc=0.68 V

CB diffusion voltage of depletion capacitance.

60

pc=0.5

CB grading coefficient.

61

swvchc=0

Switch of Vch for CB depletion capacitance.

62

swvjunc=0

Switch of Vjunc for collector junction capacitance.

63

xp=0.35

Constant part of Cjc.

64

mc=0.5

Coefficient for current modulation of CB depletion capacitance.

65

xcjc=0.032

Fraction of CB depletion capacitance under the emitter.

66

cbco=0 F

CB overlap capacitance.

67

mtau=1

Non-ideality factor of emitter stored charge.

68

taue=2e-12 s

Minimum transit time of stored emitter charge.

69

taub=4.2e-12 s

Transit time of stored base charge.

70

tepi=4.1e-11 s

Transit time of stored epilayer charge.

71

taur=5.2e-10 s

Transit time of reverse extrinsic stored base charge.

72

deg=0 eV

Bandgap difference over the base.

73

xrec=0

Pre-factor of the recombination part of Ib1.

74

xqb=0.333

Emitter-fraction of base diffusion charge.

75

ke=0

Fraction of QE in excess phase shift.

76

aqbo=0.3

Temperature coefficient of zero-bias base charge.

77

ae=0

Temperature coefficient of resistivity of the emitter.

78

ab=1

Temperature coefficient of resistivity of the base.

79

aepi=2.5

Temperature coefficient of resistivity of the epilayer.

80

aex=0.62

Temperature coefficient of resistivity of the extrinsic base.

81

ac=2

Temperature coefficient of resistivity of the collector contact.

82

acx=1.3

Temperature coefficient of extrinsic reverse base current.

83

acbl=2

Temperature coefficient of resistivity of the collector buried layer.

84

vgb=1.17 V

Band-gap voltage of base.

85

vgc=1.18 V

Band-gap voltage of collector.

86

vge=1.12 V

Band-gap voltage of emitter.

87

vgcx=1.12 V

Band-gap voltage of extrinsic collector.

88

vgj=1.15 V

Band-gap voltage recombination EB junction.

89

vgzeb=1.15 V

Band-gap voltage at Tref for EB tunneling.

90

avgeb=0.000473 V/K

Temperature coefficient of band-gap voltage for EB tunneling.

91

tvgeb=636 K

Temperature coefficient of band-gap voltage for EB tunneling.

92

vgzcb=1.15 V

Band-gap voltage at Tref for CB tunneling.

93

avgcb=0.000473 V/K

Temperature coefficient of band-gap voltage for CB tunneling.

94

tvgcb=636 K

Temperature coefficient of band-gap voltage for CB tunneling.

95

dvgte=0.05 V

Band-gap voltage difference of emitter stored charge.

96

dais=0

Fine tuning of temperature dependence of CE saturation current.

97

tnff=0 /K

Temperature coefficient of nff.

98

tnfr=0 /K

Temperature coefficient of nfr.

99

tbavl=0.0005

Temperature scaling parameter of bavl when swavl=1.

100

af=2

Exponent of Flicker-noise of ideal base current.

101

afn=2

Exponent of Flicker-noise of non-ideal base current.

102

kf=2e-11

Flicker-noise coefficient of ideal base current.

103

kfn=2e-11

Flicker-noise coefficient of non-ideal base current.

104

kavl=0

Switch for white noise contribution due to avalanche.

105

kc=0

Switch for RF correlation noise model selection.

106

ftaun=0

Fraction of noise transit time to total transit time.

107

iss=4.8e-17 A

Saturation current of parasitic BCS transistor main current.

108

icss=0 A

CS ideal saturation current.

109

iks=0.000545 A

Knee current for BCS transistor main current.

110

cjs=3.15e-13 F

Zero-bias CS depletion capacitance.

111

vds=0.62 V

CS diffusion voltage.

112

ps=0.34

CS grading coefficient.

113

vgs=1.2 V

Band-gap voltage of the substrate.

114

as=1.58

Substrate temperature coefficient.

115

asub=2

Temperature coefficient for mobility of minorities in the substrate.

116

rth=300 K/W

Thermal resistance.

117

cth=3e-09 J/K

Thermal capacitance.

118

ath=0

Temperature coefficient of thermal resistance.

119

isibrel=0 A

Saturation current of base current for reliability simulation.

120

nfibrel=2

Non-ideality factor of base current for reliability simulation.

121

gmin=1e-13

Minimum conductance.

122

imax=1000 A

Explosion current.

123

tnom (degC)

Parameters measurement temperature.

124

tr (degC)

Alias of tnom.

125

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

jtype

type: +1=npn and -1=pnp.

2

ic (A)

External DC collector current.

3

ib (A)

External DC base current.

4

betadc

External DC current gain Ic/Ib.

5

ie (A)

External DC emitter current.

6

vbe (V)

External base-emitter bias.

7

vce (V)

External collector-emitter bias.

8

vbc (V)

External base-collector bias.

9

isx (A)

External DC substrate current.

10

vse (V)

External substrate-emitter bias.

11

vbs (V)

External base-substrate bias.

12

vsc (V)

External substrate-collector bias.

13

vb2e1 (V)

Internal base-emitter bias.

14

vb2c2 (V)

Internal base-collector bias.

15

vb2c1 (V)

Internal base-collector bias including epilayer.

16

vb1c1 (V)

External base-collector bias without contact resistances.

17

vc4c1 (V)

Bias over intrinsic buried layer.

18

vc3c4 (V)

Bias over extrinsic buried layer.

19

ve1e (V)

Bias over emitter resistance.

20

in (A)

Main current.

21

ic1c2 (A)

Epilayer current.

22

ib1b2 (A)

Pinched-base current.

23

ib1 (A)

Ideal forward base current.

24

ib1s (A)

Ideal side-wall base current.

25

ib2s (A)

Non-ideal side-wall base current.

26

ibrel (A)

Additional non-ideal base current for reliability simulation.

27

izteb (A)

Zener tunneling current in the emitter base junction.

28

iztcb (A)

Zener tunneling current in the collector base junction.

29

ib2 (A)

Non-ideal forward base current.

30

ib3 (A)

Non-ideal reverse base current.

31

iavl (A)

Avalanche current.

32

iex (A)

Extrinsic reverse base current.

33

xiex (A)

Extrinsic reverse base current.

34

isub (A)

Substrate current.

35

xisub (A)

Substrate current.

36

isf (A)

Substrate failure current.

37

ire (A)

Current through emitter resistance.

38

irbc (A)

Current through constant base resistance.

39

ircblx (A)

Current through extrinsic buried layer resistance.

40

ircbli (A)

Current through intrinsic buried layer resistance.

41

ircc (A)

Current through collector contact resistance.

42

qe (coul)

Emitter charge or emitter neutral charge.

43

qte (coul)

Base-emitter depletion charge.

44

sqte (coul)

Sidewall base-emitter depletion charge.

45

qbe (coul)

Base-emitter diffusion charge.

46

qbc (coul)

Base_collector diffusion charge.

4

7  qtc (coul)

Base-collector depletion charge.

48

qepi (coul)

Epilayer diffusion charge.

49

qb1b2 (coul)

ac current crowding charge.

50

qtex (coul)

Extrinsic base-collector depletion charge.

51

xqtex (coul)

Extrinsic base-collector depletion charge.

52

qex (coul)

Extrinsic base-collector diffusion charge.

53

xqex (coul)

Extrinsic base-collector diffusion charge.

54

qts (coul)

Collector-substrate depletion charge.

55

gx (S)

Forward transconductance.

56

gy (S)

Reverse transconductance.

57

gz (S)

Reverse transconductance.

58

sgpi (S)

Conductance sidewall b-e junction.

59

gpix (S)

Conductance floor b-e junction.

60

gpiy (S)

Early effect on recombination base current.

61

gpiz (S)

Early effect on recombination base current.

62

gmux (S)

Early effect on avalanche current limiting.

63

gmuy (S)

Conductance of avalanche current.

64

gmuz (S)

Conductance of avalanche current.

65

gmuex (S)

Conductance of extrinsic b-c junction.

66

xgmuex (S)

Conductance of extrinsic b-c junction.

67

grcvy (S)

Conductance of epilayer current.

68

grcvz (S)

Conductance of epilayer current.

69

rb_v ()

Variable base resistance.

70

grbvx (S)

Early effect on variable base resistance.

71

grbvy (S)

Early effect on variable base resistance.

72

grbvz (S)

Early effect on variable base resistance.

73

r_e ()

Emitter resistance.

74

rb_c ()

Constant base resistance.

75

rc_c ()

Collector contact resistance.

76

rc_blx ()

Extrinsic buried layer resistance.

77

rc_bli ()

Intrinsic buried layer resistance.

78

gs (S)

Conductance parasitic PNP transistor.

79

xgs (S)

Conductance parasitic PNP transistor.

80

gsf (S)

Conductance substrate failure current.

81

scbe (F)

Capacitance sidewall b-e junction.

82

cbex (F)

Capacitance floor b-e junction.

83

cbey (F)

Early effect on b-e diffusion charge.

84

cbez (F)

Early effect on b-e diffusion charge.

85

cbcx (F)

Early effect on b-c diffusion charge.

86

cbcy (F)

Capacitance floor b-c junction.

87

cbcz (F)

Capacitance floor b-c junction.

88

cbcex (F)

Capacitance extrinsic b-c junction.

89

xcbcex (F)

Capacitance extrinsic b-c junction.

90

cb1b2 (F)

Capacitance AC current crowding.

91

cb1b2x (F)

Cross-capacitance AC current crowding.

92

cb1b2y (F)

Cross-capacitance AC current crowding.

93

cb1b2z (F)

Cross-capacitance AC current crowding.

94

cts (F)

Capacitance s-c junction.

95

gm (S)

transconductance.

96

beta

Current amplification.

97

gout (S)

Output conductance.

98

gmu (S)

Feedback transconductance.

99

rb ()

Base resistance.

100

rc ()

Collector resistance.

101

cbe (F)

Base-emitter capacitance.

102

cbc (F)

Base-collector capacitance.

103

ft (Hz)

Good approximation for cut-off frequency.

104

iqs (A)

Current at onset of quasi-saturation.

105

xiwepi

Thickness of injection layer normalized to epi layer width.

106

vb2c2star (V)

Physical value of internal base-collector bias.

107

pdiss (W)

Dissipation.

108

tk (K)

Actual temperature.

109

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

aavl      M-34
gpix      OP-59
kfn      M-103
taur      M-71
ab      M-78
gpiy      OP-60
level      M-1
tbavl      M-99
ac      M-81
gpiz      OP-61
m      I-6
tempeff      O-1
acbl      M-83
grbvx      OP-70
mc      M-64
tepi      M-70
acx      M-82
grbvy      OP-71
meff      O-2
tk      OP-108
ae      M-77
grbvz      OP-72
mlf      M-21
tnff      M-97
aepi      M-79
grcvy      OP-67
mlfs      M-23
tnfr      M-98
aex      M-80
grcvz      OP-68
mlr      M-27
tnom      M-123
af      M-100
gs      OP-78
mtau      M-67
tr      M-124
afn      M-101
gsf      OP-80
mult      I-2
tref      M-5
aqbo      M-76
gx      OP-55
nbi      M-17
trise      I-4
area      I-7
gy      OP-56
nbis      M-19
tvgcb      M-94
as      M-114
gz      OP-57
nff      M-11
tvgeb      M-91
asub      M-115
iavl      OP-31
nfibrel      M-120
type      M-4
ath      M-118
ib      OP-3
nfr      M-12
vavl      M-40
avgcb      M-93
ib1      OP-23
nzcb      M-32
vb1c1      OP-16
avgeb      M-90
ib1b2      OP-22
nzeb      M-30
vb2c1      OP-15
axi      M-51
ib1s      OP-24
paramchk      M-2
vb2c2      OP-14
bavl      M-37
ib2      OP-29
pc      M-60
vb2c2star      OP-106
beta      OP-96
ib2s      OP-25
pdiss      OP-107
vb2e1      OP-13
betadc      OP-4
ib3      OP-30
pe      M-55
vbc      OP-8
cavl      M-35
ibf      M-20
printscaled      I-3
vbe      OP-6
cb1b2      OP-90
ibfs      M-22
ps      M-112
vbs      OP-11
cb1b2x      OP-91
ibi      M-16
pwr      OP-109
vc3c4      OP-18
cb1b2y      OP-92
ibis      M-18
qb1b2      OP-49
vc4c1      OP-17
cb1b2z      OP-93
ibr      M-26
qbc      OP-46
vce      OP-7
cbc      OP-102
ibrel      OP-26
qbe      OP-45
vdc      M-52
cbcex      OP-88
ibx      M-24
qe      OP-42
vdcavl      M-38
cbco      M-66
ic      OP-2
qepi      OP-48
vdcctc      M-59
cbcx      OP-85
ic1c2      OP-21
qex      OP-52
vde      M-54
cbcy      OP-86
icss      M-108
qtc      OP-47
vds      M-111
cbcz      OP-87
ie      OP-5
qte      OP-43
ve1e      OP-19
cbe      OP-101
iex      OP-32
qtex      OP-50
vef      M-15
cbeo      M-57
ihc      M-50
qts      OP-54
ver      M-14
cbex      OP-82
ik      M-13
r_e      OP-73
version      M-3
cbey      OP-83
ikbx      M-25
rb      OP-99
vgb      M-84
cbez      OP-84
iks      M-109
rb_c      OP-74
vgc      M-85
cjc      M-58
imax      M-122
rb_v      OP-69
vgcx      M-87
cje      M-53
in      OP-20
rbc      M-43
vge      M-86
cjs      M-110
iqs      OP-104
rbv      M-44
vgj      M-88
compatible      M-125
irbc      OP-38
rc      OP-100
vgs      M-113
cth      M-117
ircbli      OP-40
rc_bli      OP-77
vgzcb      M-92
cts      OP-94
ircblx      OP-39
rc_blx      OP-76
vgzeb      M-89
dais      M-96
ircc      OP-41
rc_c      OP-75
vsc      OP-12
deg      M-72
ire      OP-37
rcbli      M-47
vse      OP-10
dta      I-1
is      M-10
rcblx      M-46
wavl      M-39
dvgte      M-95
isf      OP-36
rcc      M-45
xcbcex      OP-89
exavl      M-8
isibrel      M-119
rcv      M-48
xcjc      M-65
exmod      M-6
iss      M-107
re      M-42
xcje      M-56
exphi      M-7
isub      OP-34
region      I-5
xext      M-28
exsub      M-9
isx      OP-9
rth      M-116
xgmuex      OP-66
ft      OP-103
itoavl      M-36
scbe      OP-81
xgs      OP-79
ftaun      M-106
izcb      M-31
scrcv      M-49
xiex      OP-33
gm      OP-95
izeb      M-29
sfh      M-41
xisub      OP-35
gmin      M-121
iztcb      OP-28
sgpi      OP-58
xiwepi      OP-105
gmu      OP-98
izteb      OP-27
sqte      OP-44
xp      M-63
gmuex      OP-65
jtype      OP-1
swavl      M-33
xqb      M-74
gmux      OP-62
kavl      M-104
swvchc      M-61
xqex      OP-53
gmuy      OP-63
kc      M-105
swvjunc      M-62
xqtex      OP-51
gmuz      OP-64
ke      M-75
taub      M-69
xrec      M-73
gout      OP-97
kf      M-102
taue      M-68

Compact Bipolar-Transistor Model (bjtd504)

This is SimKit 5.0.

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of multiplication factor.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd504 parameter=value ...

Model Parameters

1

level=504

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

Flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

is=2.2e-17 A

Collector-emitter saturation current.

10

ik=0.1 A

Collector-emitter high injection knee current.

11

ver=2.5 V

Reverse Early voltage.

12

vef=44 V

Forward Early voltage.

13

bf=215

Ideal forward current gain.

14

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

15

mlf=2

Non ideality factor of the non-ideal forward base current.

16

xibi=0

Part of ideal base current that belongs to the sidewall.

17

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

18

nzeb=22

Coefficient of emitter-base Zener tunneling current.

19

bri=7

Ideal reverse current gain.

20

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

21

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

22

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

23

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

24

vavl=3 V

Voltage determining curvature of avalanche current.

25

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

26

re=5

Emitter resistance.

27

rbc=23

Constant part of the base resistance.

28

rbv=18

Zero-bias value of the variable part of the base resistance.

29

rcc=12

Collector contact resistance.

30

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

31

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

32

rcv=150

Resistance of the un-modulated epilayer.

33

scrcv=1.25e+03

Space charge resistance of the epilayer.

34

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

35

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

36

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

37

vde=0.95 V

Emitter-base diffusion voltage.

38

pe=0.4

Emitter-base grading coefficient.

39

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

40

cbeo=0

Emitter-base overlap capacitance.

41

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

42

vdc=0.68 V

Collector-base diffusion voltage.

43

pc=0.5

Collector-base grading coefficient.

44

xp=0.35

Constant part of Cjc.

45

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

46

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

47

cbco=0

Collector-base overlap capacitance.

48

mtau=1

Non-ideality factor of the emitter stored charge.

49

taue=2e-12 s

Minimum transit time of stored emitter charge.

50

taub=4.2e-12 s

Transit time of stored base charge.

51

tepi=4.1e-11 s

Transit time of stored epilayer charge.

52

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

53

deg=0 eV

Bandgap difference over the base.

54

xrec=0

Pre-factor of the recombination part of Ib1.

55

xqb=0.333

Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).

56

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

57

ae=0

Temperature coefficient of the resistivity of the emitter.

58

ab=1

Temperature coefficient of the resistivity of the base.

59

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

60

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

61

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

62

ac=2

Temperature coefficient of the resistivity of the collector contact.

63

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

64

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

65

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

66

vgb=1.17 V

Bandgap voltage of the base.

67

vgc=1.18 V

Bandgap voltage of the collector.

68

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

69

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

70

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

71

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

72

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

73

af=2

Exponent of the Flicker-noise.

74

kf=2e-11

Flicker-noise coefficient of the ideal base current.

75

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

76

kavl=0

Switch for white noise contribution due to avalanche.

77

kavlver=504

Switch for avalanche noise of 504.11 and 504.12.

78

kc=0

Switch for RF correlation noise model selection.

79

ke=0

Fraction of QE in excess phase shift.

80

ftaun=0

Fraction of noise transit time to total transit time.

82

vexlim=400

Upper limit of exp() function argument for convergence.

83

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

84

imax=1000 A

Explosion current.

85

mvt0=0.0

Threshold mismatch intercept.

86

tnom (deg. C)

Alias of tnom.

87

tr (deg. C)

Alias of tnom.

88

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

BetaDC

External DC current gain Ic/Ib.

5

Vbe (V)

External base-emitter bias.

6

Vbc (V)

External base-collector bias.

7

Vce (V)

External collector-emitter bias.

8

Vb2e1 (V)

Internal base-emitter bias.

9

Vb2c2 (V)

Internal base-collector bias.

10

Vb2c1 (V)

Internal base-collector bias including epilayer.

11

Vb1c1 (V)

External base-collector bias without contact resistances.

12

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

13

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

14

Vc4c1 (V)

Bias over intrinsic buried layer.

15

Ve1e (V)

Bias over emitter resistance.

16

In (A)

Main current.

17

Ic1c2 (A)

Epilayer current.

18

Ib1b2 (A)

Pinched-base current.

19

Ib1 (A)

Ideal forward base current.

20

SIb1 (A)

Ideal side-wall base current.

21

Izteb (A)

Zener tunneling current in the emitter base junction.

22

Ib2 (A)

Non-ideal forward base current.

23

Ib3 (A)

Non-ideal reverse base current.

24

Iex (A)

Extrinsic reverse base current.

25

XIex (A)

Extrinsic reverse base current.

26

Iavl (A)

Avalanche current.

27

IRE (A)

Current through emitter resistance.

28

IRBC (A)

Current through constant base resistance.

29

IRCC (A)

Current through collector contact resistance.

30

IRCBLX (A)

Current through extrinsic collector resistance.

31

IRCBLI (A)

Current through intrinsic collector resistance.

32

Qe (C)

Emitter charge or emitter neutral charge.

33

Qte (C)

Base-emitter depletion charge.

34

SQte (C)

Sidewall base-emitter depletion charge.

35

Qbe (C)

Base-emitter diffusion charge.

36

Qbc (C)

Base-collector diffusion charge.

37

Qtc (C)

Base-collector depletion charge.

38

Qepi (C)

Epilayer diffusion charge.

39

Qb1b2 (C)

AC current crowding charge.

40

Qtex (C)

Extrinsic base-collector depletion charge.

41

XQtex (C)

Extrinsic base-collector depletion charge.

42

Qex (C)

Extrinsic base-collector diffusion charge.

43

XQex (C)

Extrinsic base-collector diffusion charge.

44

gx (1/)

Forward transconductance.

45

gy (1/)

Reverse transconductance.

46

gz (1/)

Reverse transconductance.

47

Sgpi (1/)

Conductance sidewall b-e junction.

48

gpix (1/)

Conductance floor b-e junction.

49

gpiy (1/)

Early effect on recombination base current.

50

gpiz (1/)

Early effect on recombination base current.

51

gmux (1/)

Early effect on avalanche current limiting.

52

gmuy (1/)

Conductance of avalanche current.

53

gmuz (1/)

Conductance of avalanche current.

54

gmuex (1/)

Conductance extrinsic b-c junction.

55

Xgmuex (1/)

Conductance extrinsic b-c junction.

56

grcvy (1/)

Conductance of the epilayer current.

57

grcvz (1/)

Conductance of the epilayer current.

58

Rbv ()

Base resistance.

59

grbvx (1/)

Early-effect on base resistance.

60

grbvy (1/)

Early-effect on base resistance.

61

grbvz (1/)

Early-effect on base resistance:.

62

RE ()

Emitter resistance.

63

RBC ()

Constant part of the base resistance.

64

RCC ()

Collector contact resistance.

65

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

66

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

67

SCbe (F)

Capacitance sidewall b-e junction.

68

Cbex (F)

Capacitance floor b-e junction.

69

Cbey (F)

Early effect on b-e diffusion charge.

70

Cbez (F)

Early effect on b-e diffusion charge.

71

Cbcx (F)

Early effect on b-c diffusion charge.

72

Cbcy (F)

Capacitance floor b-c junction.

73

Cbcz (F)

Capacitance floor b-c junction.

74

Cbcex (F)

Capacitance extrinsic b-c junction.

75

XCbcex (F)

Capacitance extrinsic b-c junction.

76

Cb1b2 (F)

Capacitance AC current crowding.

77

Cb1b2x (F)

Cross-capacitance AC current crowding.

78

Cb1b2y (F)

Cross-capacitance AC current crowding.

79

Cb1b2z (F)

Cross-capacitance AC current crowding.

80

gm (1/)

Transconductance.

81

beta

Current amplification.

82

gout (1/)

Output conductance.

83

gmu (1/)

Feedback transconductance.

84

RB ()

Base resistance.

85

Cbe (F)

Base-emitter capacitance.

86

Cbc (F)

Base-collector capacitance.

87

fT (Hz)

Good approximation for cut-off frequency.

88

Iqs (A)

Current at onset of quasi-saturation.

89

XiWepi (M)

Thickness of injection layer.

90

Vb2c2star (V)

Physical value of internal base-collector bias.

91

Pdiss (W)

Dissipation.

92

pwr (W)

Dissipation.

93

TK (K)

Actual temperature.

94

jtype

Type: +1=npn and -1=pnp.

95

w_estimate (M)

96

l_estimate (M

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC      OP-4
Rbv      OP-58
dvgte      M-72
nzeb      M-18
Cb1b2      OP-76
SCbe      OP-67
exavl      M-8
paramchk      M-2
Cb1b2x      OP-77
SIb1      OP-20
exmod      M-6
pc      M-43
Cb1b2y      OP-78
SQte      OP-34
exphi      M-7
pe      M-38
Cb1b2z      OP-79
Sgpi      OP-47
fT      OP-87
printscaled      I-2
Cbc      OP-86
TK      OP-93
ftaun      M-80
pwr      OP-92
Cbcex      OP-74
Vb1c1      OP-11
gm      OP-80
rbc      M-27
Cbcx      OP-71
Vb1c4      OP-12
gmu      OP-83
rbv      M-28
Cbcy      OP-72
Vb2c1      OP-10
gmuex      OP-54
rcbli      M-31
Cbcz      OP-73
Vb2c2      OP-9
gmux      OP-51
rcblx      M-30
Cbe      OP-85
Vb2c2star      OP-90
gmuy      OP-52
rcc      M-29
Cbex      OP-68
Vb2e1      OP-8
gmuz      OP-53
rcv      M-32
Cbey      OP-69
Vbc      OP-6
gout      OP-82
re      M-26
Cbez      OP-70
Vbe      OP-5
gpix      OP-48
region      I-4
IRBC      OP-28
Vc3c4      OP-13
gpiy      OP-49
scrcv      M-33
IRCBLI      OP-31
Vc4c1      OP-14
gpiz      OP-50
sfh      M-25
IRCBLX      OP-30
Vce      OP-7
grbvx      OP-59
taub      M-50
IRCC      OP-29
Ve1e      OP-15
grbvy      OP-60
taue      M-49
IRE      OP-27
XCbcex      OP-75
grbvz      OP-61
taur      M-52
Iavl      OP-26
XIex      OP-25
grcvy      OP-56
tempeff      O-1
Ib      OP-2
XQex      OP-43
grcvz      OP-57
tepi      M-51
Ib1      OP-19
XQtex      OP-41
gx      OP-44
tnom      M-85
Ib1b2      OP-18
Xgmuex      OP-55
gy      OP-45
tr      M-86
Ib2      OP-22
XiWepi      OP-89
gz      OP-46
tref      M-4
Ib3      OP-23
ab      M-58
ibf      M-14
trise      I-3
Ic      OP-1
ac      M-62
ibr      M-20
tvgeb      M-71
Ic1c2      OP-17
acbl      M-63
ihc      M-34
type      M-82
Ie      OP-3
ae      M-57
ik      M-10
vavl      M-24
Iex      OP-24
aepi      M-60
imax      M-83
vdc      M-42
In      OP-16
aex      M-61
is      M-9
vde      M-37
Iqs      OP-88
af      M-73
izeb      M-17
vef      M-12
Izteb      OP-21
aqbo      M-56
jtype      OP-94
ver      M-11
Pdiss      OP-91
area      I-6
kavl      M-76
vexlim      M-81
Qb1b2      OP-39
avgeb      M-70
kavlver      M-77
vgb      M-66
Qbc      OP-36
axi      M-35
kc      M-78
vgc      M-67
Qbe      OP-35
beta      OP-81
ke      M-79
vgj      M-68
Qe      OP-32
bf      M-13
kf      M-74
vgzeb      M-69
Qepi      OP-38
bri      M-19
kfn      M-75
vlr      M-21
Qex      OP-42
cbco      M-47
l_estimate      OP-96
w_estimate      OP-95
Qtc      OP-37
cbeo      M-40
level      M-1
wavl      M-23
Qte      OP-33
cjc      M-41
m      I-5
xcjc      M-46
Qtex      OP-40
cje      M-36
mc      M-45
xcje      M-39
RB      OP-84
compatible      M-87
meff      O-2
xext      M-22
RBC      OP-63
dais      M-59
mexlev      M-3
xibi      M-16
RCBLI      OP-66
deg      M-53
mlf      M-15
xp      M-44
RCBLX      OP-65
dta      M-5
mtau      M-48
xqb      M-55
RCC      OP-64
dvgbf      M-64
mult      I-1
xrec      M-54
RE      OP-62
dvgbr      M-65
mvt0      M-84

Compact Bipolar-Transistor Model (bjtd504t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd504t parameter=value ...

Model Parameters

1

level=504

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

Flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

is=2.2e-17 A

Collector-emitter saturation current.

10

ik=0.1 A

Collector-emitter high injection knee current.

11

ver=2.5 V

Reverse Early voltage.

12

vef=44 V

Forward Early voltage.

13

bf=215

Ideal forward current gain.

14

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

15

mlf=2

Non ideality factor of the non-ideal forward base current.

16

xibi=0

Part of ideal base current that belongs to the sidewall.

17

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

18

nzeb=22

Coefficient of emitter-base Zener tunneling current.

19

bri=7

Ideal reverse current gain.

20

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

21

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

22

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

23

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

24

vavl=3 V

Voltage determining curvature of avalanche current.

25

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

26

re=5

Emitter resistance.

27

rbc=23

Constant part of the base resistance.

28

rbv=18

Zero-bias value of the variable part of the base resistance.

29

rcc=12

Collector contact resistance.

30

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

31

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

32

rcv=150

Resistance of the un-modulated epilayer.

33

scrcv=1.25e+03

Space charge resistance of the epilayer.

34

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

35

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

36

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

37

vde=0.95 V

Emitter-base diffusion voltage.

38

pe=0.4

Emitter-base grading coefficient.

39

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

40

cbeo=0

Emitter-base overlap capacitance.

41

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

42

vdc=0.68 V

Collector-base diffusion voltage.

43

pc=0.5

Collector-base grading coefficient.

44

xp=0.35

Constant part of Cjc.

45

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

46

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

47

cbco=0

Collector-base overlap capacitance.

48

mtau=1

Non-ideality factor of the emitter stored charge.

49

taue=2e-12 s

Minimum transit time of stored emitter charge.

50

taub=4.2e-12 s

Transit time of stored base charge.

51

tepi=4.1e-11 s

Transit time of stored epilayer charge.

52

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

53

deg=0 eV

Bandgap difference over the base.

54

xrec=0

Pre-factor of the recombination part of Ib1.

55

xqb=0.333

Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).

56

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

57

ae=0

Temperature coefficient of the resistivity of the emitter.

58

ab=1

Temperature coefficient of the resistivity of the base.

59

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

60

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

61

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

62

ac=2

Temperature coefficient of the resistivity of the collector contact.

63

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

64

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

65

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

66

vgb=1.17 V

Bandgap voltage of the base.

67

vgc=1.18 V

Bandgap voltage of the collector.

68

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

69

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

70

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

71

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

72

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

73

af=2

Exponent of the Flicker-noise.

74

kf=2e-11

Flicker-noise coefficient of the ideal base current.

75

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

76

kavl=0

Switch for white noise contribution due to avalanche.

77

kavlver=504

Switch for avalanche noise of 504.11 and 504.12.

78

kc=0

Switch for RF correlation noise model selection.

79

ke=0

Fraction of QE in excess phase shift.

80

ftaun=0

Fraction of noise transit time to total transit time.

81

rth=300 K/W

Thermal resistance.

82

cth=3e-09 J/K

Thermal capacitance.

83

ath=0

Temperature coefficient of the thermal resistance.

84

vexlim=400

Upper limit of exp() function argument for convergence.

85

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

86

imax=1000 A

Explosion current.

87

mvt0=0.0

Threshold mismatch intercept.

88

tnom (deg. C)

Alias of tnom.

99

tr (deg. C)

Alias of tnom.

90

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

BetaDC

External DC current gain Ic/Ib.

5

Vbe (V)

External base-emitter bias.

6

Vbc (V)

External base-collector bias.

7

Vce (V)

External collector-emitter bias.

8

Vb2e1 (V)

Internal base-emitter bias.

9

Vb2c2 (V)

Internal base-collector bias.

10

Vb2c1 (V)

Internal base-collector bias including epilayer.

11

Vb1c1 (V)

External base-collector bias without contact resistances.

12

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

13

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

14

Vc4c1 (V)

Bias over intrinsic buried layer.

15

Ve1e (V)

Bias over emitter resistance.

16

In (A)

Main current.

17

Ic1c2 (A)

Epilayer current.

18

Ib1b2 (A)

Pinched-base current.

19

Ib1 (A)

Ideal forward base current.

20

SIb1 (A)

Ideal side-wall base current.

21

Izteb (A)

Zener tunneling current in the emitter base junction.

22

Ib2 (A)

Non-ideal forward base current.

23

Ib3 (A)

Non-ideal reverse base current.

24

Iex (A)

Extrinsic reverse base current.

25

XIex (A)

Extrinsic reverse base current.

26

Iavl (A)

Avalanche current.

27

IRE (A)

Current through emitter resistance.

28

IRBC (A)

Current through constant base resistance.

29

IRCC (A)

Current through collector contact resistance.

30

IRCBLX (A)

Current through extrinsic collector resistance.

31

IRCBLI (A)

Current through intrinsic collector resistance.

32

Qe (C)

Emitter charge or emitter neutral charge.

33

Qte (C)

Base-emitter depletion charge.

34

SQte (C)

Sidewall base-emitter depletion charge.

35

Qbe (C)

Base-emitter diffusion charge.

36

Qbc (C)

Base-collector diffusion charge.

37

Qtc (C)

Base-collector depletion charge.

38

Qepi (C)

Epilayer diffusion charge.

39

Qb1b2 (C)

AC current crowding charge.

40

Qtex (C)

Extrinsic base-collector depletion charge.

41

XQtex (C)

Extrinsic base-collector depletion charge.

42

Qex (C)

Extrinsic base-collector diffusion charge.

43

XQex (C)

Extrinsic base-collector diffusion charge.

44

gx (1/)

Forward transconductance.

45

gy (1/)

Reverse transconductance.

46

gz (1/)

Reverse transconductance.

47

Sgpi (1/)

Conductance sidewall b-e junction.

48

gpix (1/)

Conductance floor b-e junction.

49

gpiy (1/)

Early effect on recombination base current.

50

gpiz (1/)

Early effect on recombination base current.

51

gmux (1/)

Early effect on avalanche current limiting.

52

gmuy (1/)

Conductance of avalanche current.

53

gmuz (1/)

Conductance of avalanche current.

54

gmuex (1/)

Conductance extrinsic b-c junction.

55

Xgmuex (1/)

Conductance extrinsic b-c junction.

56

grcvy (1/)

Conductance of the epilayer current.

57

grcvz (1/)

Conductance of the epilayer current.

58

Rbv ()

Base resistance.

59

grbvx (1/)

Early-effect on base resistance.

60

grbvy (1/)

Early-effect on base resistance.

61

grbvz (1/)

Early-effect on base resistance:.

62

RE ()

Emitter resistance.

63

RBC ()

Constant part of the base resistance.

64

RCC ()

Collector contact resistance.

65

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

66

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

67

SCbe (F)

Capacitance sidewall b-e junction.

68

Cbex (F)

Capacitance floor b-e junction.

69

Cbey (F)

Early effect on b-e diffusion charge.

70

Cbez (F)

Early effect on b-e diffusion charge.

71

Cbcx (F)

Early effect on b-c diffusion charge.

72

Cbcy (F)

Capacitance floor b-c junction.

73

Cbcz (F)

Capacitance floor b-c junction.

74

Cbcex (F)

Capacitance extrinsic b-c junction.

75

XCbcex (F)

Capacitance extrinsic b-c junction.

76

Cb1b2 (F)

Capacitance AC current crowding.

77

Cb1b2x (F)

Cross-capacitance AC current crowding.

78

Cb1b2y (F)

Cross-capacitance AC current crowding.

79

Cb1b2z (F)

Cross-capacitance AC current crowding.

80

gm (1/)

Transconductance.

81

beta

Current amplification.

82

gout (1/)

Output conductance.

83

gmu (1/)

Feedback transconductance.

84

RB ()

Base resistance.

85

Cbe (F)

Base-emitter capacitance.

86

Cbc (F)

Base-collector capacitance.

87

fT (Hz)

Good approximation for cut-off frequency.

88

Iqs (A)

Current at onset of quasi-saturation.

89

XiWepi (M)

Thickness of injection layer.

90

Vb2c2star (V)

Physical value of internal base-collector bias.

91

Pdiss (W)

Dissipation.

92

pwr (W)

Dissipation.

93

TK (K)

Actual temperature.

94

jtype

Type: +1=npn and -1=pnp.

95

w_estimate (M)

96

l_estimate (M)

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC      OP-4
SCbe      OP-67
dvgte      M-72
paramchk      M-2
Cb1b2      OP-76
SIb1      OP-20
exavl      M-8
pc      M-43
Cb1b2x      OP-77
SQte      OP-34
exmod      M-6
pe      M-38
Cb1b2y      OP-78
Sgpi      OP-47
exphi      M-7
printscaled      I-2
Cb1b2z      OP-79
TK      OP-93
fT      OP-87
pwr      OP-92
Cbc      OP-86
Vb1c1      OP-11
ftaun      M-80
rbc      M-27
Cbcex      OP-74
Vb1c4      OP-12
gm      OP-80
rbv      M-28
Cbcx      OP-71
Vb2c1      OP-10
gmu      OP-83
rcbli      M-31
Cbcy      OP-72
Vb2c2      OP-9
gmuex      OP-54
rcblx      M-30
Cbcz      OP-73
Vb2c2star      OP-90
gmux      OP-51
rcc      M-29
Cbe      OP-85
Vb2e1      OP-8
gmuy      OP-52
rcv      M-32
Cbex      OP-68
Vbc      OP-6
gmuz      OP-53
re      M-26
Cbey      OP-69
Vbe      OP-5
gout      OP-82
region      I-4
Cbez      OP-70
Vc3c4      OP-13
gpix      OP-48
rth      M-81
IRBC      OP-28
Vc4c1      OP-14
gpiy      OP-49
scrcv      M-33
IRCBLI      OP-31
Vce      OP-7
gpiz      OP-50
sfh      M-25
IRCBLX      OP-30
Ve1e      OP-15
grbvx      OP-59
taub      M-50
IRCC      OP-29
XCbcex      OP-75
grbvy      OP-60
taue      M-49
IRE      OP-27
XIex      OP-25
grbvz      OP-61
taur      M-52
Iavl      OP-26
XQex      OP-43
grcvy      OP-56
tempeff      O-1
Ib      OP-2
XQtex      OP-41
grcvz      OP-57
tepi      M-51
Ib1      OP-19
Xgmuex      OP-55
gx      OP-44
tnom      M-88
Ib1b2      OP-18
XiWepi      OP-89
gy      OP-45
tr      M-89
Ib2      OP-22
ab      M-58
gz      OP-46
tref      M-4
Ib3      OP-23
ac      M-62
ibf      M-14
trise      I-3
Ic      OP-1
acbl      M-63
ibr      M-20
tvgeb      M-71
Ic1c2      OP-17
ae      M-57
ihc      M-34
type      M-85
Ie      OP-3
aepi      M-60
ik      M-10
vavl      M-24
Iex      OP-24
aex      M-61
imax      M-86
vdc      M-42
In      OP-16
af      M-73
is      M-9
vde      M-37
Iqs      OP-88
aqbo      M-56
izeb      M-17
vef      M-12
Izteb      OP-21
area      I-6
jtype      OP-94
ver      M-11
Pdiss      OP-91
ath      M-83
kavl      M-76
vexlim      M-84
Qb1b2      OP-39
avgeb      M-70
kavlver      M-77
vgb      M-66
Qbc      OP-36
axi      M-35
kc      M-78
vgc      M-67
Qbe      OP-35
beta      OP-81
ke      M-79
vgj      M-68
Qe      OP-32
bf      M-13
kf      M-74
vgzeb      M-69
Qepi      OP-38
bri      M-19
kfn      M-75
vlr      M-21
Qex      OP-42
cbco      M-47
l_estimate      OP-96
w_estimate      OP-95
Qtc      OP-37
cbeo      M-40
level      M-1
wavl      M-23
Qte      OP-33
cjc      M-41
m      I-5
xcjc      M-46
Qtex      OP-40
cje      M-36
mc      M-45
xcje      M-39
RB      OP-84
compatible      M-90
meff      O-2
xext      M-22
RBC      OP-63
cth      M-82
mexlev      M-3
xibi      M-16
RCBLI      OP-66
dais      M-59
mlf      M-15
xp      M-44
RCBLX      OP-65
deg      M-53
mtau      M-48
xqb      M-55
RCC      OP-64
dta      M-5
mult      I-1
xrec      M-54
RE      OP-62
dvgbf      M-64
mvt0      M-87
Rbv      OP-58
dvgbr      M-65
nzeb      M-18

Compact Bipolar-Transistor Model (bjtd505)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1

dta=0 degC

Difference between the local and global ambient temperatures.

2

mult=1

Multiplication factor.

3

printscaled=0

Print scaled parameter info if value not equal to zero.

4

trise=0

Difference between the local ambient and global ambient temperature.

5

region=fwd

Estimated DC operating region, used as a convergence aid.
Possible values are off, sat, rev, and fwd.

6

m=1

Alias of mult.

7

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd505 parameter=value ...

Model Parameters

1

level=505

Model level.

2

paramchk=0

Level of clip warning info.

3

version=505

Model version.

4

type=npn

Flag for NPN (1) or PNP (-1) transistor type.
Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

5

tref=25 degC

Reference temperature.

6

exmod=1

Flag for extended modeling of the reverse current gain.

7

exphi=1

Flag for distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modeling of avalanche currents.

9

is=2.2e-17 A

Saturation current of main current.

10

nff=1

Non-ideality factor of forward main current.

11

nfr=1

Non-ideality factor of reverse main current.

12

ik=0.1 A

CE high injection knee current.

13

ver=2.5 V

Reverse Early voltage.

14

vef=44 V

Forward Early voltage.

15

ibi=1e-19 A

Saturation current of ideal base current.

16

nbi=1

Non-ideality factor of ideal base current.

17

ibis=0 A

Saturation current of ideal side wall base current.

18

nbis=1

Non-ideality factor of ideal side wall base current.

19

ibf=2.7e-15 A

Saturation current of non-ideal forward base current.

20

mlf=2

Non-ideality factor of non-ideal forward base current.

21

ibfs=0 A

Saturation current of non-ideal side wall forward base current.

22

mlfs=2

Non-ideality factor of non-ideal side wall forward base current.

23

ibx=3.14e-18 A

Saturation current of extrinsic reverse base current.

24

ikbx=0.0143 A

Extrinsic CB high injection knee current.

25

ibr=1e-15 A

Saturation current of non-ideal reverse base current.

26

mlr=2

Non-ideality factor of non-ideal reverse base current.

27

xext=0.63

Part of currents and charges that belong to extrinsic region.

28

izeb=0 A

Pre-factor of EB Zener tunneling current.

29

nzeb=22

Coefficient of EB Zener tunneling current.

30

izcb=0 A

Pre-factor of CB Zener tunneling current.

31

nzcb=22

Coefficient of CB Zener tunneling current.

32

swavl=1

Switch of avalanche factor Gem model.

33

aavl=400

aavl of swavl=1 Gem model.

34

cavl=-0.37

cavl of swavl=1 Gem model.

35

itoavl=0.5 A

Current dependence parameter of swavl=1 Gem model.

36

bavl=25

bavl of swavl=1 Gem model.

37

vdcavl=0.1 V

CB diffusion voltage dedicated for swavl=1 Gem model.

38

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

39

vavl=3 V

Voltage determining curvature of avalanche current.

40

sfh=0.3

Current spreading factor of avalanche model when exavl=1.

41

re=5

Emitter resistance.

42

rbc=23

Constant part of base resistance.

43

rbv=18

Zero-bias value of variable part of the base resistance.

44

rcc=12

Constant part of collector resistance.

45

rcblx=0

Resistance Collector Buried Layer extrinsic.

46

rcbli=0

Resistance Collector Buried Layer Intrinsic.

47

rcv=150

Resistance of un-modulated epilayer.

48

scrcv=1.25e+03

Space charge resistance of epilayer.

49

ihc=0.004 A

Critical current for velocity saturation in epilayer.

50

axi=0.3

Smoothness parameter for onset of quasi-saturation.

51

vdc=0.68 V

CB diffusion voltage.

52

cje=7.3e-14 F

Zero-bias EB depletion capacitance.

53

vde=0.95 V

EB diffusion voltage.

54

pe=0.4

EB grading coefficient.

55

xcje=0.4

Sidewall fraction of EB depletion capacitance.

56

cbeo=0 F

EB overlap capacitance.

57

cjc=7.8e-14 F

Zero-bias CB depletion capacitance.

58

vdcctc=0.68 V

CB diffusion voltage of depletion capacitance.

59

pc=0.5

CB grading coefficient.

60

swvchc=0

Switch of Vch for CB depletion capacitance.

61

swvjunc=0

Switch of Vjunc for collector junction capacitance.

62

xp=0.35

Constant part of Cjc.

63

mc=0.5

Coefficient for current modulation of CB depletion capacitance.

64

xcjc=0.032

Fraction of CB depletion capacitance under the emitter.

65

cbco=0 F

CB overlap capacitance.

66

mtau=1

Non-ideality factor of emitter stored charge.

67

taue=2e-12 s

Minimum transit time of stored emitter charge.

68

taub=4.2e-12 s

Transit time of stored base charge.

69

tepi=4.1e-11 s

Transit time of stored epilayer charge.

70

taur=5.2e-10 s

Transit time of reverse extrinsic stored base charge.

71

deg=0 eV

Bandgap difference over the base.

72

xrec=0

Pre-factor of the recombination part of Ib1.

73

xqb=0.333

Emitter-fraction of base diffusion charge.

74

ke=0

Fraction of QE in excess phase shift.

75

aqbo=0.3

Temperature coefficient of zero-bias base charge.

76

ae=0

Temperature coefficient of resistivity of the emitter.

77

ab=1

Temperature coefficient of resistivity of the base.

78

aepi=2.5

Temperature coefficient of resistivity of the epilayer.

79

aex=0.62

Temperature coefficient of resistivity of the extrinsic base.

80

ac=2

Temperature coefficient of resistivity of the collector contact.

81

acx=1.3

Temperature coefficient of extrinsic reverse base current.

82

acbl=2

Temperature coefficient of resistivity of the collector buried layer.

83

vgb=1.17 V

Band-gap voltage of base.

84

vgc=1.18 V

Band-gap voltage of collector.

85

vge=1.12 V

Band-gap voltage of emitter.

86

vgcx=1.12 V

Band-gap voltage of extrinsic collector.

87

vgj=1.15 V

Band-gap voltage recombination EB junction.

88

vgzeb=1.15 V

Band-gap voltage at Tref for EB tunneling.

89

avgeb=0.000473 V/K

Temperature coefficient of band-gap voltage for EB tunneling.

90

tvgeb=636 K

Temperature coefficient of band-gap voltage for EB tunneling.

91

vgzcb=1.15 V

Band-gap voltage at Tref for CB tunneling.

92

avgcb=0.000473 V/K

Temperature coefficient of band-gap voltage for CB tunneling.

93

tvgcb=636 K

Temperature coefficient of band-gap voltage for CB tunneling.

94

dvgte=0.05 V

Band-gap voltage difference of emitter stored charge.

95

dais=0

Fine tuning of temperature dependence of CE saturation current.

96

tnff=0 /K

Temperature coefficient of nff.

97

tnfr=0 /K

Temperature coefficient of nfr.

98

tbavl=0.0005

Temperature scaling parameter of bavl when swavl=1.

99

af=2

Exponent of Flicker-noise of ideal base current.

100

afn=2

Exponent of Flicker-noise of non-ideal base current.

101

kf=2e-11

Flicker-noise coefficient of ideal base current.

102

kfn=2e-11

Flicker-noise coefficient of non-ideal base current.

103

kavl=0

Switch for white noise contribution due to avalanche.

104

kc=0

Switch for RF correlation noise model selection.

105

ftaun=0

Fraction of noise transit time to total transit time.

106

isibrel=0 A

Saturation current of base current for reliability simulation.

107

nfibrel=2

Non-ideality factor of base current for reliability simulation.

108

gmin=1e-13

Minimum conductance.

109

imax=1000 A

Explosion current.

110

tnom (degC)

Parameters measurement temperature.

111

tr (degC)

Alias of tnom.

112

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

jtype

type: +1=npn and -1=pnp.

2

r_e ()

Emitter resistance.

3

rb_c ()

Constant base resistance.

4

rc_c ()

Collector contact resistance.

5

rc_blx ()

Extrinsic buried layer resistance.

6

rc_bli ()

Intrinsic buried layer resistance.

7

rc ()

Collector resistance.

8

tk (K)

Actual temperature.

9

ic (A)

External DC collector current.

10

ib (A)

External DC base current.

11

betadc

External DC current gain Ic/Ib.

12

ie (A)

External DC emitter current.

13

vbe (V)

External base-emitter bias.

14

vce (V)

External collector-emitter bias.

15

vbc (V)

External base-collector bias.

16

vb2e1 (V)

Internal base-emitter bias.

17

vb2c2 (V)

Internal base-collector bias.

18

vb2c1 (V)

Internal base-collector bias including epilayer.

19

vb1c1 (V)

External base-collector bias without contact resistances.

20

vc4c1 (V)

Bias over intrinsic buried layer.

21

vc3c4 (V)

Bias over extrinsic buried layer.

22

ve1e (V)

Bias over emitter resistance.

23

in (A)

Main current.

24

ic1c2 (A)

Epilayer current.

25

ib1b2 (A)

Pinched-base current.

26

ib1 (A)

Ideal forward base current.

27

ib1s (A)

Ideal side-wall base current.

28

ib2s (A)

Non-ideal side-wall base current.

29

ibrel (A)

Additional non-ideal base current for reliability simulation.

30

izteb (A)

Zener tunneling current in the emitter base junction.

31

iztcb (A)

Zener tunneling current in the collector base junction.

32

ib2 (A)

Non-ideal forward base current.

33

ib3 (A)

Non-ideal reverse base current.

34

iavl (A)

Avalanche current.

35

iex (A)

Extrinsic reverse base current.

36

xiex (A)

Extrinsic reverse base current.

37

ire (A)

Current through emitter resistance.

38

irbc (A)

Current through constant base resistance.

39

ircblx (A)

Current through extrinsic buried layer resistance.

40

ircbli (A)

Current through intrinsic buried layer resistance.

41

ircc (A)

Current through collector contact resistance.

42

qe (coul)

Emitter charge or emitter neutral charge.

43

qte (coul)

Base-emitter depletion charge.

44

sqte (coul)

Sidewall base-emitter depletion charge.

45

qbe (coul)

Base-emitter diffusion charge.

46

qbc (coul)

Base_collector diffusion charge.

47

qtc (coul)

Base-collector depletion charge.

48

qepi (coul)

Epilayer diffusion charge.

49

qb1b2 (coul)

ac current crowding charge.

50

qtex (coul)

Extrinsic base-collector depletion charge.

51

xqtex (coul)

Extrinsic base-collector depletion charge.

52

qex (coul)

Extrinsic base-collector diffusion charge.

53

xqex (coul)

Extrinsic base-collector diffusion charge.

54

gx (S)

Forward transconductance.

55

gy (S)

Reverse transconductance.

56

gz (S)

Reverse transconductance.

57

sgpi (S)

Conductance sidewall b-e junction.

58

gpix (S)

Conductance floor b-e junction.

59

gpiy (S)

Early effect on recombination base current.

60

gpiz (S)

Early effect on recombination base current.

61

gmux (S)

Early effect on avalanche current limiting.

62

gmuy (S)

Conductance of avalanche current.

63

gmuz (S)

Conductance of avalanche current.

64

gmuex (S)

Conductance of extrinsic b-c junction.

65

xgmuex (S)

Conductance of extrinsic b-c junction.

66

grcvy (S)

Conductance of epilayer current.

67

grcvz (S)

Conductance of epilayer current.

68

rb_v ()

Variable base resistance.

69

grbvx (S)

Early effect on variable base resistance.

70

grbvy (S)

Early effect on variable base resistance.

71

grbvz (S)

Early effect on variable base resistance.

72

scbe (F)

Capacitance sidewall b-e junction.

73

cbex (F)

Capacitance floor b-e junction.

74

cbey (F)

Early effect on b-e diffusion charge.

75

cbez (F)

Early effect on b-e diffusion charge.

76

cbcx (F)

Early effect on b-c diffusion charge.

77

cbcy (F)

Capacitance floor b-c junction.

78

cbcz (F)

Capacitance floor b-c junction.

79

cbcex (F)

Capacitance extrinsic b-c junction.

80

xcbcex (F)

Capacitance extrinsic b-c junction.

81

cb1b2 (F)

Capacitance AC current crowding.

82

cb1b2x (F)

Cross-capacitance AC current crowding.

83

cb1b2y (F)

Cross-capacitance AC current crowding.

84

cb1b2z (F)

Cross-capacitance AC current crowding.

85

gm (S)

transconductance.

86

beta

Current amplification.

87

gout (S)

Output conductance.

88

gmu (S)

Feedback transconductance.

89

rb ()

Base resistance.

90

cbe (F)

Base-emitter capacitance.

91

cbc (F)

Base-collector capacitance.

92

ft (Hz)

Good approximation for cut-off frequency.

93

iqs (A)

Current at onset of quasi-saturation.

94

xiwepi

Thickness of injection layer normalized to epi layer width.

95

vb2c2star (V)

Physical value of internal base-collector bias.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

aavl M-33 gpix OP-58 level M-1 taue M-67
ab M-77 gpiy OP-59 m I-6 taur M-70
ac M-80 gpiz OP-60 mc M-63 tbavl M-98
acbl M-82 grbvx OP-69 meff O-2 tempeff O-1
acx M-81 grbvy OP-70 mlf M-20 tepi M-69
ae M-76 grbvz OP-71 mlfs M-22 tk OP-8
aepi M-78 grcvy OP-66 mlr M-26 tnff M-96
aex M-79 grcvz OP-67 mtau M-66 tnfr M-97
af M-99 gx OP-54 mult I-2 tnom M-110
afn M-100 gy OP-55 nbi M-16 tr M-111
aqbo M-75 gz OP-56 nbis M-18 tref M-5
area I-7 iavl OP-34 nff M-10 trise I-4
avgcb M-92 ib OP-10 nfibrel M-107 tvgcb M-93
avgeb M-89 ib1 OP-26 nfr M-11 tvgeb M-90
axi M-50 ib1b2 OP-25 nzcb M-31 type M-4
bavl M-36 ib1s OP-27 nzeb M-29 vavl M-39
beta OP-86 ib2 OP-32 paramchk M-2 vb1c1 OP-19
betadc OP-11 ib2s OP-28 pc M-59 vb2c1 OP-18
cavl M-34 ib3 OP-33 pe M-54 vb2c2 OP-17
cb1b2 OP-81 ibf M-19 printscaled I-3 vb2c2star OP-95
cb1b2x OP-82 ibfs M-21 qb1b2 OP-49 vb2e1 OP-16
cb1b2y OP-83 ibi M-15 qbc OP-46 vbc OP-15
cb1b2z OP-84 ibis M-17 qbe OP-45 vbe OP-13
cbc OP-91 ibr M-25 qe OP-42 vc3c4 OP-21
cbcex OP-79 ibrel OP-29 qepi OP-48 vc4c1 OP-20
cbco M-65 ibx M-23 qex OP-52 vce OP-14
cbcx OP-76 ic OP-9 qtc OP-47 vdc M-51
cbcy OP-77 ic1c2 OP-24 qte OP-43 vdcavl M-37
cbcz OP-78 ie OP-12 qtex OP-50 vdcctc M-58
cbe OP-90 iex OP-35 r_e OP-2 vde M-53
cbeo M-56 ihc M-49 rb OP-89 ve1e OP-22
cbex OP-73 ik M-12 rb_c OP-3 vef M-14
cbey OP-74 ikbx M-24 rb_v OP-68 ver M-13
cbez OP-75 imax M-109 rbc M-42 version M-3
cjc M-57 in OP-23 rbv M-43 vgb M-83
cje M-52 iqs OP-93 rc OP-7 vgc M-84
compatible M-112 irbc OP-38 rc_bli OP-6 vgcx M-86
dais M-95 ircbli OP-40 rc_blx OP-5 vge M-85
deg M-71 ircblx OP-39 rc_c OP-4 vgj M-87
dta I-1 ircc OP-41 rcbli M-46 vgzcb M-91
dvgte M-94 ire OP-37 rcblx M-45 vgzeb M-88
exavl M-8 is M-9 rcc M-44 wavl M-38
exmod M-6 isibrel M-106 rcv M-47 xcbcex OP-80
exphi M-7 itoavl M-35 re M-41 xcjc M-64
ft OP-92 izcb M-30 region I-5 xcje M-55
ftaun M-105 izeb M-28 scbe OP-72 xext M-27
gm OP-85 iztcb OP-31 scrcv M-48 xgmuex OP-65
gmin M-108 izteb OP-30 sfh M-40 xiex OP-36
gmu OP-88 jtype OP-1 sgpi OP-57 xiwepi OP-94
gmuex OP-64 kavl M-103 sqte OP-44 xp M-62
gmux OP-61 kc M-104 swavl M-32 xqb M-73
gmuy OP-62 ke M-74 swvchc M-60 xqex OP-53
gmuz OP-63 kf M-101 swvjunc M-61 xqtex OP-51
gout OP-87 kfn M-102 taub M-68 xrec M-72

Compact Bipolar-Transistor Model (bjtd505t)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1

dta=0 degC

Difference between the local and global ambient temperatures.

2

mult=1

Multiplication factor.

3

printscaled=0

Print scaled parameter info if value not equal to zero.

4

trise=0

Difference between the local ambient and global ambient temperature.

5

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

6

m=1

Alias of mult.

7

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd505t parameter=value ...

Model Parame

ters

1

level=505

Model level.

2

paramchk=0

Level of clip warning info.

3

version=505

Model version.

4

type=npn

Flag for NPN (1) or PNP (-1) transistor type.
Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

5

tref=25 degC

Reference temperature.

6

exmod=1

Flag for extended modeling of the reverse current gain.

7

exphi=1

Flag for distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modeling of avalanche currents.

9

is=2.2e-17 A

Saturation current of main current.

10

nff=1

Non-ideality factor of forward main current.

11

nfr=1

Non-ideality factor of reverse main current.

12

ik=0.1 A

CE high injection knee current.

13

ver=2.5 V

Reverse Early voltage.

14

vef=44 V

Forward Early voltage.

15

ibi=1e-19 A

Saturation current of ideal base current.

16

nbi=1

Non-ideality factor of ideal base current.

17

ibis=0 A

Saturation current of ideal side wall base current.

18

nbis=1

Non-ideality factor of ideal side wall base current.

19

ibf=2.7e-15 A

Saturation current of non-ideal forward base current.

20

mlf=2

Non-ideality factor of non-ideal forward base current.

21

ibfs=0 A

Saturation current of non-ideal side wall forward base current.

22

mlfs=2

Non-ideality factor of non-ideal side wall forward base current.

23

ibx=3.14e-18 A

Saturation current of extrinsic reverse base current.

24

ikbx=0.0143 A

Extrinsic CB high injection knee current.

25

ibr=1e-15 A

Saturation current of non-ideal reverse base current.

26

mlr=2

Non-ideality factor of non-ideal reverse base current.

27

xext=0.63

Part of currents and charges that belong to extrinsic region.

28

izeb=0 A

Pre-factor of EB Zener tunneling current.

29

nzeb=22

Coefficient of EB Zener tunneling current.

30

izcb=0 A

Pre-factor of CB Zener tunneling current.

31

nzcb=22

Coefficient of CB Zener tunneling current.

32

swavl=1

Switch of avalanche factor Gem model.

33

aavl=400

aavl of swavl=1 Gem model.

34

cavl=-0.37

cavl of swavl=1 Gem model.

35

itoavl=0.5 A

Current dependence parameter of swavl=1 Gem model.

36

bavl=25

bavl of swavl=1 Gem model.

37

vdcavl=0.1 V

CB diffusion voltage dedicated for swavl=1 Gem model.

38

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

39

vavl=3 V

Voltage determining curvature of avalanche current.

40

sfh=0.3

Current spreading factor of avalanche model when exavl=1.

41

re=5

Emitter resistance.

42

rbc=23

Constant part of base resistance.

43

rbv=18

Zero-bias value of variable part of the base resistance.

44

rcc=12

Constant part of collector resistance.

45

rcblx=0

Resistance Collector Buried Layer extrinsic.

46

rcbli=0

Resistance Collector Buried Layer Intrinsic.

47

rcv=150

Resistance of un-modulated epilayer.

48

scrcv=1.25e+03

Space charge resistance of epilayer.

49

ihc=0.004 A

Critical current for velocity saturation in epilayer.

50

axi=0.3

Smoothness parameter for onset of quasi-saturation.

51

vdc=0.68 V

CB diffusion voltage.

52

cje=7.3e-14 F

Zero-bias EB depletion capacitance.

53

vde=0.95 V

EB diffusion voltage.

54

pe=0.4

EB grading coefficient.

55

xcje=0.4

Sidewall fraction of EB depletion capacitance.

56

cbeo=0 F

EB overlap capacitance.

57

cjc=7.8e-14 F

Zero-bias CB depletion capacitance.

58

vdcctc=0.68 V

CB diffusion voltage of depletion capacitance.

59

pc=0.5

CB grading coefficient.

60

swvchc=0

Switch of Vch for CB depletion capacitance.

61

swvjunc=0

Switch of Vjunc for collector junction capacitance.

62

xp=0.35

Constant part of Cjc.

63

mc=0.5

Coefficient for current modulation of CB depletion capacitance.

64

xcjc=0.032

Fraction of CB depletion capacitance under the emitter.

65

cbco=0 F

CB overlap capacitance.

66

mtau=1

Non-ideality factor of emitter stored charge.

67

taue=2e-12 s

Minimum transit time of stored emitter charge.

68

taub=4.2e-12 s

Transit time of stored base charge.

69

tepi=4.1e-11 s

Transit time of stored epilayer charge.

70

taur=5.2e-10 s

Transit time of reverse extrinsic stored base charge.

71

deg=0 eV

Bandgap difference over the base.

72

xrec=0

Pre-factor of the recombination part of Ib1.

73

xqb=0.333

Emitter-fraction of base diffusion charge.

74

ke=0

Fraction of QE in excess phase shift.

75

aqbo=0.3

Temperature coefficient of zero-bias base charge.

76

ae=0

Temperature coefficient of resistivity of the emitter.

77

ab=1

Temperature coefficient of resistivity of the base.

78

aepi=2.5

Temperature coefficient of resistivity of the epilayer.

79

aex=0.62

Temperature coefficient of resistivity of the extrinsic base.

80

ac=2

Temperature coefficient of resistivity of the collector contact.

81

acx=1.3

Temperature coefficient of extrinsic reverse base current.

82

acbl=2

Temperature coefficient of resistivity of the collector buried layer.

83

vgb=1.17 V

Band-gap voltage of base.

84

vgc=1.18 V

Band-gap voltage of collector.

85

vge=1.12 V

Band-gap voltage of emitter.

86

vgcx=1.12 V

Band-gap voltage of extrinsic collector.

87

vgj=1.15 V

Band-gap voltage recombination EB junction.

88

vgzeb=1.15 V

Band-gap voltage at Tref for EB tunneling.

89

avgeb=0.000473 V/K

Temperature coefficient of band-gap voltage for EB tunneling.

90

tvgeb=636 K

Temperature coefficient of band-gap voltage for EB tunneling.

91

vgzcb=1.15 V

Band-gap voltage at Tref for CB tunneling.

92

avgcb=0.000473 V/K

Temperature coefficient of band-gap voltage for CB tunneling.

93

tvgcb=636 K

Temperature coefficient of band-gap voltage for CB tunneling.

94

dvgte=0.05 V

Band-gap voltage difference of emitter stored charge.

95

dais=0

Fine tuning of temperature dependence of CE saturation current.

96

tnff=0 /K

Temperature coefficient of nff.

97

tnfr=0 /K

Temperature coefficient of nfr.

98

tbavl=0.0005

Temperature scaling parameter of bavl when swavl=1.

99

af=2

Exponent of Flicker-noise of ideal base current.

100

afn=2

Exponent of Flicker-noise of non-ideal base current.

101

kf=2e-11

Flicker-noise coefficient of ideal base current.

102

kfn=2e-11

Flicker-noise coefficient of non-ideal base current.

103

kavl=0

Switch for white noise contribution due to avalanche.

104

kc=0

Switch for RF correlation noise model selection.

105

ftaun=0

Fraction of noise transit time to total transit time.

106

rth=300 K/W

Thermal resistance.

107

cth=3e-09 J/K

Thermal capacitance.

108

ath=0

Temperature coefficient of thermal resistance.

109

isibrel=0 A

Saturation current of base current for reliability simulation.

110

nfibrel=2

Non-ideality factor of base current for reliability simulation.

111

gmin=1e-13

Minimum conductance.

112

imax=1000 A

Explosion current.

113

tnom (degC)

Parameters measurement temperature.

114

tr (degC)

Alias of tnom.

115

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

jtype

type: +1=npn and -1=pnp.

2

ic (A)

External DC collector current.

3

ib (A)

External DC base current.

4

betadc

External DC current gain Ic/Ib.

5

ie (A)

External DC emitter current.

6

vbe (V)

External base-emitter bias.

7

vce (V)

External collector-emitter bias.

8

vbc (V)

External base-collector bias.

9

vb2e1 (V)

Internal base-emitter bias.

10

vb2c2 (V)

Internal base-collector bias.

11

vb2c1 (V)

Internal base-collector bias including epilayer.

12

vb1c1 (V)

External base-collector bias without contact resistances.

13

vc4c1 (V)

Bias over intrinsic buried layer.

14

vc3c4 (V)

Bias over extrinsic buried layer.

15

ve1e (V)

Bias over emitter resistance.

16

in (A)

Main current.

17

ic1c2 (A)

Epilayer current.

18

ib1b2 (A)

Pinched-base current.

19

ib1 (A)

Ideal forward base current.

20

ib1s (A)

Ideal side-wall base current.

21

ib2s (A)

Non-ideal side-wall base current.

22

ibrel (A)

Additional non-ideal base current for reliability simulation.

23

izteb (A)

Zener tunneling current in the emitter base junction.

24

iztcb (A)

Zener tunneling current in the collector base junction.

25

ib2 (A)

Non-ideal forward base current.

26

ib3 (A)

Non-ideal reverse base current.

27

iavl (A)

Avalanche current.

28

iex (A)

Extrinsic reverse base current.

29

xiex (A)

Extrinsic reverse base current.

30

ire (A)

Current through emitter resistance.

31

irbc (A)

Current through constant base resistance.

32

ircblx (A)

Current through extrinsic buried layer resistance.

33

ircbli (A)

Current through intrinsic buried layer resistance.

34

ircc (A)

Current through collector contact resistance.

35

qe (coul)

Emitter charge or emitter neutral charge.

36

qte (coul)

Base-emitter depletion charge.

37

sqte (coul)

Sidewall base-emitter depletion charge.

38

qbe (coul)

Base-emitter diffusion charge.

39

qbc (coul)

Base_collector diffusion charge.

40

qtc (coul)

Base-collector depletion charge.

41

qepi (coul)

Epilayer diffusion charge.

42

qb1b2 (coul)

ac current crowding charge.

43

qtex (coul)

Extrinsic base-collector depletion charge.

44

xqtex (coul)

Extrinsic base-collector depletion charge.

45

qex (coul)

Extrinsic base-collector diffusion charge.

46

xqex (coul)

Extrinsic base-collector diffusion charge.

47

gx (S)

Forward transconductance.

48

gy (S)

Reverse transconductance.

49

gz (S)

Reverse transconductance.

50

sgpi (S)

Conductance sidewall b-e junction.

51

gpix (S)

Conductance floor b-e junction.

52

gpiy (S)

Early effect on recombination base current.

53

gpiz (S)

Early effect on recombination base current.

54

gmux (S)

Early effect on avalanche current limiting.

55

gmuy (S)

Conductance of avalanche current.

56

gmuz (S)

Conductance of avalanche current.

57

gmuex (S)

Conductance of extrinsic b-c junction.

58

xgmuex (S)

Conductance of extrinsic b-c junction.

59

grcvy (S)

Conductance of epilayer current.

60

grcvz (S)

Conductance of epilayer current.

61

rb_v ()

Variable base resistance.

62

grbvx (S)

Early effect on variable base resistance.

63

grbvy (S)

Early effect on variable base resistance.

64

grbvz (S)

Early effect on variable base resistance.

65

r_e ()

Emitter resistance.

66

rb_c ()

Constant base resistance.

67

rc_c ()

Collector contact resistance.

68

rc_blx ()

Extrinsic buried layer resistance.

69

rc_bli ()

Intrinsic buried layer resistance.

70

scbe (F)

Capacitance sidewall b-e junction.

71

cbex (F)

Capacitance floor b-e junction.

72

cbey (F)

Early effect on b-e diffusion charge.

73

cbez (F)

Early effect on b-e diffusion charge.

74

cbcx (F)

Early effect on b-c diffusion charge.

75

cbcy (F)

Capacitance floor b-c junction.

76

cbcz (F)

Capacitance floor b-c junction.

77

cbcex (F)

Capacitance extrinsic b-c junction.

78

xcbcex (F)

Capacitance extrinsic b-c junction.

79

cb1b2 (F)

Capacitance AC current crowding.

80

cb1b2x (F)

Cross-capacitance AC current crowding.

81

cb1b2y (F)

Cross-capacitance AC current crowding.

82

cb1b2z (F)

Cross-capacitance AC current crowding.

83

gm (S)

transconductance.

84

beta

Current amplification.

85

gout (S)

Output conductance.

86

gmu (S)

Feedback transconductance.

87

rb ()

Base resistance.

88

rc ()

Collector resistance.

89

cbe (F)

Base-emitter capacitance.

90

cbc (F)

Base-collector capacitance.

91

ft (Hz)

Good approximation for cut-off frequency.

92

iqs (A)

Current at onset of quasi-saturation.

93

xiwepi

Thickness of injection layer normalized to epi layer width.

94

vb2c2star (V)

Physical value of internal base-collector bias.

95

pdiss (W)

Dissipation.

96

tk (K)

Actual temperature.

97

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

aavl      M-33
gpix      OP-51
mc      M-63
taur      M-70
ab      M-77
gpiy      OP-52
meff      O-2
tbavl      M-98
ac      M-80
gpiz      OP-53
mlf      M-20
tempeff      O-1
acbl      M-82
grbvx      OP-62
mlfs      M-22
tepi      M-69
acx      M-81
grbvy      OP-63
mlr      M-26
tk      OP-96
ae      M-76
grbvz      OP-64
mtau      M-66
tnff      M-96
aepi      M-78
grcvy      OP-59
mult      I-2
tnfr      M-97
aex      M-79
grcvz      OP-60
nbi      M-16
tnom      M-113
af      M-99
gx      OP-47
nbis      M-18
tr      M-114
afn      M-100
gy      OP-48
nff      M-10
tref      M-5
aqbo      M-75
gz      OP-49
nfibrel      M-110
trise      I-4
area      I-7
iavl      OP-27
nfr      M-11
tvgcb      M-93
ath      M-108
ib      OP-3
nzcb      M-31
tvgeb      M-90
avgcb      M-92
ib1      OP-19
nzeb      M-29
type      M-4
avgeb      M-89
ib1b2      OP-18
paramchk      M-2
vavl      M-39
axi      M-50
ib1s      OP-20
pc      M-59
vb1c1      OP-12
bavl      M-36
ib2      OP-25
pdiss      OP-95
vb2c1      OP-11
beta      OP-84
ib2s      OP-21
pe      M-54
vb2c2      OP-10
betadc      OP-4
ib3      OP-26
printscaled      I-3
vb2c2star      OP-94
cavl      M-34
ibf      M-19
pwr      OP-97
vb2e1      OP-9
cb1b2      OP-79
ibfs      M-21
qb1b2      OP-42
vbc      OP-8
cb1b2x      OP-80
ibi      M-15
qbc      OP-39
vbe      OP-6
cb1b2y      OP-81
ibis      M-17
qbe      OP-38
vc3c4      OP-14
cb1b2z      OP-82
ibr      M-25
qe      OP-35
vc4c1      OP-13
cbc      OP-90
ibrel      OP-22
qepi      OP-41
vce      OP-7
cbcex      OP-77
ibx      M-23
qex      OP-45
vdc      M-51
cbco      M-65
ic      OP-2
qtc      OP-40
vdcavl      M-37
cbcx      OP-74
ic1c2      OP-17
qte      OP-36
vdcctc      M-58
cbcy      OP-75
ie      OP-5
qtex      OP-43
vde      M-53
cbcz      OP-76
iex      OP-28
r_e      OP-65
ve1e      OP-15
cbe      OP-89
ihc      M-49
rb      OP-87
vef      M-14
cbeo      M-56
ik      M-12
rb_c      OP-66
ver      M-13
cbex      OP-71
ikbx      M-24
rb_v      OP-61
version      M-3
cbey      OP-72
imax      M-112
rbc      M-42
vgb      M-83
cbez      OP-73
in      OP-16
rbv      M-43
vgc      M-84
cjc      M-57
iqs      OP-92
rc      OP-88
vgcx      M-86
cje      M-52
irbc      OP-31
rc_bli      OP-69
vge      M-85
compatible      M-115
ircbli      OP-33
rc_blx      OP-68
vgj      M-87
cth      M-107
ircblx      OP-32
rc_c      OP-67
vgzcb      M-91
dais      M-95
ircc      OP-34
rcbli      M-46
vgzeb      M-88
deg      M-71
ire      OP-30
rcblx      M-45
wavl      M-38
dta      I-1
is      M-9
rcc      M-44
xcbcex      OP-78
dvgte      M-94
isibrel      M-109
rcv      M-47
xcjc      M-64
exavl      M-8
itoavl      M-35
re      M-41
xcje      M-55
exmod      M-6
izcb      M-30
region      I-5
xext      M-27
exphi      M-7
izeb      M-28
rth      M-106
xgmuex      OP-58
ft      OP-91
iztcb      OP-24
scbe      OP-70
xiex      OP-29
ftaun      M-105
izteb      OP-23
scrcv      M-48
xiwepi      OP-93
gm      OP-83
jtype      OP-1
sfh      M-40
xp      M-62
gmin      M-111
kavl      M-103
sgpi      OP-50
xqb      M-73
gmu      OP-86
kc      M-104
sqte      OP-37
xqex      OP-46
gmuex      OP-57
ke      M-74
swavl      M-32
xqtex      OP-44
gmux      OP-54
kf      M-101
swvchc      M-60
xrec      M-72
gmuy      OP-55
kfn      M-102
swvjunc      M-61
gmuz      OP-56
level      M-1
taub      M-68
gout      OP-85
m      I-6
taue      M-67

Compact Bipolar-Transistor Model (bjtd3500)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd3500 parameter=value ...

Model Parameters

1

level=3.5e+03

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

is=2.2e-17 A

Collector-emitter saturation current.

10

ik=0.1 A

Collector-emitter high injection knee current.

11

ver=2.5 V

Reverse Early voltage.

12

vef=44 V

Forward Early voltage.

13

bf=215

Ideal forward current gain.

14

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

15

mlf=2

Non ideality factor of the non-ideal forward base current.

16

mhf=1

Non ideality factor of the non-ideal forward base current.

17

mlr=2

Non ideality factor of the non-ideal reverse base current.

18

mhr=1

Non ideality factor of the ideal reverse base current.

19

mf=1

Non ideality factor of main current.

20

xibi=0

Part of ideal base current that belongs to the sidewall.

21

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

22

nzeb=22

Coefficient of emitter-base Zener tunneling current.

23

bri=7

Ideal reverse current gain.

24

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

25

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

26

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

27

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

28

vavl=3 V

Voltage determining curvature of avalanche current.

29

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

30

re=5

Emitter resistance.

31

rbc=23

Constant part of the base resistance.

32

rbv=18

Zero-bias value of the variable part of the base resistance.

33

rcc=12

Collector contact resistance.

34

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

35

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

36

rcv=150

Resistance of the un-modulated epilayer.

37

scrcv=1.25e+03

Space charge resistance of the epilayer.

38

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

39

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

40

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

41

vde=0.95 V

Emitter-base diffusion voltage.

42

pe=0.4

Emitter-base grading coefficient.

43

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

44

cbeo=0

Emitter-base overlap capacitance.

45

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

46

vdc=0.68 V

Collector-base diffusion voltage.

47

pc=0.5

Collector-base grading coefficient.

48

xp=0.35

Constant part of Cjc.

49

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

50

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

51

cbco=0

Collector-base overlap capacitance.

52

vos=0.04 V

Voltage describing overshoot.

53

isat=0.067 A

Saturation current.

54

repi=6

Ohmic resistance epilayer.

55

rdmin=0

Minimum relative collector doping.

56

sbjn=0.1

Smoothness parameter Qtc model.

57

sbeb=0.1

Smoothness parameter Qtc model.

58

etavdr=0.23

Slope-parameter of Vdrift at high electric field.

59

nvdr=4

Power describing saturation behavior of Qtc.

60

alfaw=0

Smooth switch for reachthrough modelling.

61

sw=0.1

Smoothness parameter for reachthrough modelling.

62

mtau=1

Non-ideality factor of the emitter stored charge.

63

taue=2e-12 s

Minimum transit time of stored emitter charge.

64

taub=4.2e-12 s

Transit time of stored base charge.

65

tepi=4.1e-11 s

Transit time of stored epilayer charge.

66

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

67

deg=0 eV

Bandgap difference over the base.

68

xrec=0

Pre-factor of the recombination part of Ib1.

69

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

70

ae=0

Temperature coefficient of the resistivity of the emitter.

71

ab=1

Temperature coefficient of the resistivity of the base.

72

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

73

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

74

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

75

ac=2

Temperature coefficient of the resistivity of the collector contact.

76

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

77

aisat=-0.37

Temperature coefficient of the saturation current.

78

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

79

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

80

vgb=1.17 V

Bandgap voltage of the base.

81

vgc=1.18 V

Bandgap voltage of the collector.

82

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

83

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

84

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

85

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

86

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

87

af=2

Exponent of the Flicker-noise.

88

kf=2e-11

Flicker-noise coefficient of the ideal base current.

89

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

90

kavl=0

Switch for white noise contribution due to avalanche.

91

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

92

imax=1000 A

Explosion current.

93

tnom (deg. C)

alias of tnom.

94

tr (deg. C)

alias of tnom.

95

simkitver=3.4

96

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

BetaDC

External DC current gain Ic/Ib.

5

Vbe (V)

External base-emitter bias.

6

Vbc (V)

External base-collector bias.

7

Vce (V)

External collector-emitter bias.

8

Vb2e1 (V)

Internal base-emitter bias.

9

Vb2c2 (V)

Internal base-collector bias.

10

Vb2c1 (V)

Internal base-collector bias including epilayer.

11

Vb1c1 (V)

External base-collector bias without contact resistances.

12

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

13

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

14

Vc4c1 (V)

Bias over intrinsic buried layer.

15

Ve1e (V)

Bias over emitter resistance.

16

In (A)

Main current.

17

Ic1c2 (A)

Epilayer current.

18

Ib1b2 (A)

Pinched-base current.

19

Ib1 (A)

Ideal forward base current.

20

SIb1 (A)

Ideal side-wall base current.

21

Izteb (A)

Zener tunneling current in the emitter base junction.

22

Ib2 (A)

Non-ideal forward base current.

23

Ib3 (A)

Non-ideal reverse base current.

24

Iex (A)

Extrinsic reverse base current.

25

XIex (A)

Extrinsic reverse base current.

26

Iavl (A)

Avalanche current.

27

IRE (A)

Current through emitter resistance.

28

IRBC (A)

Current through constant base resistance.

29

IRCC (A)

Current through collector contact resistance.

30

IRCBLX (A)

Current through extrinsic collector resistance.

31

IRCBLI (A)

Current through intrinsic collector resistance.

32

Qe (C)

Emitter charge or emitter neutral charge.

33

Qte (C)

Base-emitter depletion charge.

34

SQte (C)

Sidewall base-emitter depletion charge.

35

Qbe (C)

Base-emitter diffusion charge.

36

Qbc (C)

Base-collector diffusion charge.

37

Qtc (C)

Base-collector depletion charge.

38

Qepi (C)

Epilayer diffusion charge.

39

Qb1b2 (C)

AC current crowding charge.

40

Qtex (C)

Extrinsic base-collector depletion charge.

41

XQtex (C)

Extrinsic base-collector depletion charge.

42

Qex (C)

Extrinsic base-collector diffusion charge.

43

XQex (C)

Extrinsic base-collector diffusion charge.

44

gx (1/)

Forward transconductance.

45

gy (1/)

Reverse transconductance.

46

gz (1/)

Reverse transconductance.

47

Sgpi (1/)

Conductance sidewall b-e junction.

48

gpix (1/)

Conductance floor b-e junction.

49

gpiy (1/)

Early effect on recombination base current.

50

gpiz (1/)

Early effect on recombination base current.

51

gmux (1/)

Early effect on avalanche current limiting.

52

gmuy (1/)

Conductance of avalanche current.

53

gmuz (1/)

Conductance of avalanche current.

54

gmuex (1/)

Conductance extrinsic b-c junction.

55

Xgmuex (1/)

Conductance extrinsic b-c junction.

56

grcvy (1/)

Conductance of the epilayer current.

57

grcvz (1/)

Conductance of the epilayer current.

58

Rbv ()

Base resistance.

59

grbvx (1/)

Early-effect on base resistance.

60

grbvy (1/)

Early-effect on base resistance.

61

grbvz (1/)

Early-effect on base resistance:.

62

RE ()

Emitter resistance.

63

RBC ()

Constant part of the base resistance.

64

RCC ()

Collector contact resistance.

65

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

66

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

67

SCbe (F)

Capacitance sidewall b-e junction.

68

Cbex (F)

Capacitance floor b-e junction.

69

Cbey (F)

Early effect on b-e diffusion charge.

70

Cbez (F)

Early effect on b-e diffusion charge.

71

Cbcx (F)

Early effect on b-c diffusion charge.

72

Cbcy (F)

Capacitance floor b-c junction.

73

Cbcz (F)

Capacitance floor b-c junction.

74

Cbcex (F)

Capacitance extrinsic b-c junction.

75

XCbcex (F)

Capacitance extrinsic b-c junction.

76

Cb1b2 (F)

Capacitance AC current crowding.

77

Cb1b2x (F)

Cross-capacitance AC current crowding.

78

Cb1b2y (F)

Cross-capacitance of the AC current crowding.

79

Cb1b2z (F)

Cross-capacitance of the AC current crowding.

80

gm (1/)

Transconductance.

81

beta

Current amplification.

82

gout (1/)

Output conductance.

83

gmu (1/)

Feedback transconductance.

84

RB ()

Base resistance.

85

Cbe (F)

Base-emitter capacitance.

86

Cbc (F)

Base-collector capacitance.

87

fT (Hz)

Good approximation for cut-off frequency.

88

Iqs (A)

Current at onset of quasi-saturation.

89

XiWepi (M)

Thickness of injection layer.

90

Vb2c2star (V)

Physical value of internal base-collector bias.

91

Pdiss (W)

Dissipation.

92

TK (K)

Actual temperature.

93

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC OP-4 SCbe OP-67 dvgte M-85 pc M-46
Cb1b2 OP-76 SIb1 OP-20 etavdr M-57 pe M-41
Cb1b2x OP-77 SQte OP-34 exavl M-7 printscaled I-2
Cb1b2y OP-78 Sgpi OP-47 exmod M-5 pwr OP-93
Cb1b2z OP-79 TK OP-92 exphi M-6 rbc M-30
Cbc OP-86 Vb1c1 OP-11 fT OP-87 rbv M-31
Cbcex OP-74 Vb1c4 OP-12 gm OP-80 rcbli M-34
Cbcx OP-71 Vb2c1 OP-10 gmu OP-83 rcblx M-33
Cbcy OP-72 Vb2c2 OP-9 gmuex OP-54 rcc M-32
Cbcz OP-73 Vb2c2star OP-90 gmux OP-51 rcv M-35
Cbe OP-85 Vb2e1 OP-8 gmuy OP-52 rdmin M-54
Cbex OP-68 Vbc OP-6 gmuz OP-53 re M-29
Cbey OP-69 Vbe OP-5 gout OP-82 region I-4
Cbez OP-70 Vc3c4 OP-13 gpix OP-48 repi M-53
IRBC OP-28 Vc4c1 OP-14 gpiy OP-49 sbeb M-56
IRCBLI OP-31 Vce OP-7 gpiz OP-50 sbjn M-55
IRCBLX OP-30 Ve1e OP-15 grbvx OP-59 scrcv M-36
IRCC OP-29 XCbcex OP-75 grbvy OP-60 sfh M-28
IRE OP-27 XIex OP-25 grbvz OP-61 sw M-60
Iavl OP-26 XQex OP-43 grcvy OP-56 taub M-63
Ib OP-2 XQtex OP-41 grcvz OP-57 taue M-62
Ib1 OP-19 Xgmuex OP-55 gx OP-44 taur M-65
Ib1b2 OP-18 XiWepi OP-89 gy OP-45 tempeff O-1
Ib2 OP-22 ab M-70 gz OP-46 tepi M-64
Ib3 OP-23 ac M-74 ibf M-13 tnom M-92
Ic OP-1 acbl M-75 ibr M-23 tr M-93
Ic1c2 OP-17 ae M-69 ihc M-37 tref M-3
Ie OP-3 aepi M-72 ik M-9 trise I-3
Iex OP-24 aex M-73 imax M-91 tvgeb M-84
In OP-16 af M-86 is M-8 type M-90
Iqs OP-88 aisat M-76 isat M-52 vavl M-27
Izteb OP-21 alfaw M-59 izeb M-20 vdc M-45
Pdiss OP-91 aqbo M-68 kavl M-89 vde M-40
Qb1b2 OP-39 area I-6 kf M-87 vef M-11
Qbc OP-36 avgeb M-83 kfn M-88 ver M-10
Qbe OP-35 axi M-38 level M-1 vgb M-79
Qe OP-32 beta OP-81 m I-5 vgc M-80
Qepi OP-38 bf M-12 mc M-48 vgj M-81
Qex OP-42 bri M-22 meff O-2 vgzeb M-82
Qtc OP-37 cbco M-50 mf M-18 vlr M-24
Qte OP-33 cbeo M-43 mhf M-15 vos M-51
Qtex OP-40 cjc M-44 mhr M-17 wavl M-26
RB OP-84 cje M-39 mlf M-14 xcjc M-49
RBC OP-63 compatible M-94 mlr M-16 xcje M-42
RCBLI OP-66 dais M-71 mtau M-61 xext M-25
RCBLX OP-65 deg M-66 mult I-1 xibi M-19
RCC OP-64 dta M-4 nvdr M-58 xp M-47
RE OP-62 dvgbf M-77 nzeb M-21 xrec M-67
Rbv OP-58 dvgbr M-78 paramchk M-2

Compact Bipolar-Transistor Model (bjtd3500t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

5

m=1

Alias of mult.

6

area=1

Multiplication factor for bjt devices.

Model Definition

model modelName bjtd3500t parameter=value ...

Model Parameters

1

level=3.5e+03

Bipolar Level.

2

paramchk=0

Level of clip warning info.

3

mexlev=2

Flag for ELDO model.

4

tref=25 deg. C

Reference temperature.

5

dta=0 K

Difference between the local ambient and global ambient temperature.

6

exmod=1

Flag for extended modelling of reverse current gain.

7

exphi=1

Flag for the distributed high-frequency effects in transient.

8

exavl=0

Flag for extended modelling of avalanche currents.

9

is=2.2e-17 A

Collector-emitter saturation current.

10

ik=0.1 A

Collector-emitter high injection knee current.

11

ver=2.5 V

Reverse Early voltage.

12

vef=44 V

Forward Early voltage.

13

bf=215

Ideal forward current gain.

14

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

15

mlf=2

Non ideality factor of the non-ideal forward base current.

16

mhf=1

Non ideality factor of the non-ideal forward base current.

17

mlr=2

Non ideality factor of the non-ideal reverse base current.

18

mhr=1

Non ideality factor of the ideal reverse base current.

19

mf=1

Non ideality factor of main current.

20

xibi=0

Part of ideal base current that belongs to the sidewall.

21

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

22

nzeb=22

Coefficient of emitter-base Zener tunneling current.

23

bri=7

Ideal reverse current gain.

24

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

25

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

26

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

27

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

28

vavl=3 V

Voltage determining curvature of avalanche current.

29

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

30

re=5

Emitter resistance.

31

rbc=23

Constant part of the base resistance.

32

rbv=18

Zero-bias value of the variable part of the base resistance.

33

rcc=12

Collector contact resistance.

34

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

35

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

36

rcv=150

Resistance of the un-modulated epilayer.

37

scrcv=1.25e+03

Space charge resistance of the epilayer.

38

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

39

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

40

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

41

vde=0.95 V

Emitter-base diffusion voltage.

42

pe=0.4

Emitter-base grading coefficient.

43

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

44

cbeo=0

Emitter-base overlap capacitance.

45

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

46

vdc=0.68 V

Collector-base diffusion voltage.

47

pc=0.5

Collector-base grading coefficient.

48

xp=0.35

Constant part of Cjc.

49

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

50

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

51

cbco=0

Collector-base overlap capacitance.

52

vos=0.04 V

Voltage describing overshoot.

53

isat=0.067 A

Saturation current.

54

repi=6

Ohmic resistance epilayer.

55

rdmin=0

Minimum relative collector doping.

56

sbjn=0.1

Smoothness parameter Qtc model.

57

sbeb=0.1

Smoothness parameter Qtc model.

58

etavdr=0.23

Slope-parameter of Vdrift at high electric field.

59

nvdr=4

Power describing saturation behavior of Qtc.

60

alfaw=0

Smooth switch for reachthrough modelling.

61

sw=0.1

Smoothness parameter for reachthrough modelling.

62

mtau=1

Non-ideality factor of the emitter stored charge.

63

taue=2e-12 s

Minimum transit time of stored emitter charge.

64

taub=4.2e-12 s

Transit time of stored base charge.

65

tepi=4.1e-11 s

Transit time of stored epilayer charge.

66

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

67

deg=0 eV

Bandgap difference over the base.

68

xrec=0

Pre-factor of the recombination part of Ib1.

69

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

70

ae=0

Temperature coefficient of the resistivity of the emitter.

71

ab=1

Temperature coefficient of the resistivity of the base.

72

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

73

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

74

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

75

ac=2

Temperature coefficient of the resistivity of the collector contact.

76

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

77

aisat=-0.37

Temperature coefficient of the saturation current.

78

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

79

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

80

vgb=1.17 V

Bandgap voltage of the base.

81

vgc=1.18 V

Bandgap voltage of the collector.

82

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

83

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

84

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

85

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

86

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

87

af=2

Exponent of the Flicker-noise.

88

kf=2e-11

Flicker-noise coefficient of the ideal base current.

89

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

90

kavl=0

Switch for white noise contribution due to avalanche.

91

rth=300 K/W

Thermal resistance.

92

cth=3e-09 J/K

Thermal capacitance.

93

ath=0

Temperature coefficient of the thermal resistance.

94

dtmax=1e+03 K

Maximal dynamic temperature increase.

95

exrth=0

Flag for extended modelling of non-linear thermal resistance.

96

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

97

imax=1000 A

Explosion current.

98

tnom (deg. C)

Alias of tnom.

99

tr (deg. C)

Alias of tnom.

100

simkitver=3.4

101

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

Ic (A)

External DC collector current.

2

Ib (A)

External DC base current.

3

Ie (A)

External DC emitter current.

4

BetaDC

External DC current gain Ic/Ib.

5

Vbe (V)

External base-emitter bias.

6

Vbc (V)

External base-collector bias.

7

Vce (V)

External collector-emitter bias.

8

Vb2e1 (V)

Internal base-emitter bias.

9

Vb2c2 (V)

Internal base-collector bias.

10

Vb2c1 (V)

Internal base-collector bias including epilayer.

11

Vb1c1 (V)

External base-collector bias without contact resistances.

12

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

13

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

14

Vc4c1 (V)

Bias over intrinsic buried layer.

15

Ve1e (V)

Bias over emitter resistance.

16

In (A)

Main current.

17

Ic1c2 (A)

Epilayer current.

18

Ib1b2 (A)

Pinched-base current.

19

Ib1 (A)

Ideal forward base current.

20

SIb1 (A)

Ideal side-wall base current.

21

Izteb (A)

Zener tunneling current in the emitter base junction.

22

Ib2 (A)

Non-ideal forward base current.

23

Ib3 (A)

Non-ideal reverse base current.

24

Iex (A)

Extrinsic reverse base current.

25

XIex (A)

Extrinsic reverse base current.

26

Iavl (A)

Avalanche current.

27

IRE (A)

Current through emitter resistance.

28

IRBC (A)

Current through constant base resistance.

29

IRCC (A)

Current through collector contact resistance.

30

IRCBLX (A)

Current through extrinsic collector resistance.

31

IRCBLI (A)

Current through intrinsic collector resistance.

32

Qe (C)

Emitter charge or emitter neutral charge.

33

Qte (C)

Base-emitter depletion charge.

34

SQte (C)

Sidewall base-emitter depletion charge.

35

Qbe (C)

Base-emitter diffusion charge.

36

Qbc (C)

Base-collector diffusion charge.

37

Qtc (C)

Base-collector depletion charge.

38

Qepi (C)

Epilayer diffusion charge.

39

Qb1b2 (C)

AC current crowding charge.

40

Qtex (C)

Extrinsic base-collector depletion charge.

41

XQtex (C)

Extrinsic base-collector depletion charge.

42

Qex (C)

Extrinsic base-collector diffusion charge.

43

XQex (C)

Extrinsic base-collector diffusion charge.

44

gx (1/)

Forward transconductance.

45

gy (1/)

Reverse transconductance.

46

gz (1/)

Reverse transconductance.

47

Sgpi (1/)

Conductance sidewall b-e junction.

48

gpix (1/)

Conductance floor b-e junction.

49

gpiy (1/)

Early effect on recombination base current.

50

gpiz (1/)

Early effect on recombination base current.

51

gmux (1/)

Early effect on avalanche current limiting.

52

gmuy (1/)

Conductance of avalanche current.

53

gmuz (1/)

Conductance of avalanche current.

54

gmuex (1/)

Conductance extrinsic b-c junction.

55

Xgmuex (1/)

Conductance extrinsic b-c junction.

56

grcvy (1/)

Conductance of the epilayer current.

57

grcvz (1/)

Conductance of the epilayer current.

58

Rbv ()

Base resistance.

59

grbvx (1/)

Early-effect on base resistance.

60

grbvy (1/)

Early-effect on base resistance.

61

grbvz (1/)

Early-effect on base resistance:.

62

RE ()

Emitter resistance.

63

RBC ()

Constant part of the base resistance.

64

RCC ()

Collector contact resistance.

65

RCBLX ()

Resistance of collector buried layer under the extrinsic transistor.

66

RCBLI ()

Resistance of collector buried layer under the Intrinsic transistor.

67

SCbe (F)

Capacitance sidewall b-e junction.

68

Cbex (F)

Capacitance floor b-e junction.

69

Cbey (F)

Early effect on b-e diffusion charge.

70

Cbez (F)

Early effect on b-e diffusion charge.

71

Cbcx (F)

Early effect on b-c diffusion charge.

72

Cbcy (F)

Capacitance floor b-c junction.

73

Cbcz (F)

Capacitance floor b-c junction.

74

Cbcex (F)

Capacitance extrinsic b-c junction.

75

XCbcex (F)

Capacitance extrinsic b-c junction.

76

Cb1b2 (F)

Capacitance of the AC current crowding.

77

Cb1b2x (F)

Cross-capacitance of the AC current crowding.

78

Cb1b2y (F)

Cross-capacitance of the AC current crowding.

79

Cb1b2z (F)

Cross-capacitance of the AC current crowding.

80

gm (1/)

Transconductance.

81

beta

Current amplification.

82

gout (1/)

Output conductance.

83

gmu (1/)

Feedback transconductance.

84

RB ()

Base resistance.

85

Cbe (F)

Base-emitter capacitance.

86

Cbc (F)

Base-collector capacitance.

87

fT (Hz)

Good approximation for cut-off frequency.

88

Iqs (A)

Current at onset of quasi-saturation.

89

XiWepi (M)

Thickness of injection layer.

90

Vb2c2star (V)

Physical value of internal base-collector bias.

91

Pdiss (W)

Dissipation.

92

TK (K)

Actual temperature.

93

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BetaDC OP-4 SIb1 OP-20 dvgbr M-78 paramchk M-2
Cb1b2 OP-76 SQte OP-34 dvgte M-85 pc M-46
Cb1b2x OP-77 Sgpi OP-47 etavdr M-57 pe M-41
Cb1b2y OP-78 TK OP-92 exavl M-7 printscaled I-2
Cb1b2z OP-79 Vb1c1 OP-11 exmod M-5 pwr OP-93
Cbc OP-86 Vb1c4 OP-12 exphi M-6 rbc M-30
Cbcex OP-74 Vb2c1 OP-10 exrth M-94 rbv M-31
Cbcx OP-71 Vb2c2 OP-9 fT OP-87 rcbli M-34
Cbcy OP-72 Vb2c2star OP-90 gm OP-80 rcblx M-33
Cbcz OP-73 Vb2e1 OP-8 gmu OP-83 rcc M-32
Cbe OP-85 Vbc OP-6 gmuex OP-54 rcv M-35
Cbex OP-68 Vbe OP-5 gmux OP-51 rdmin M-54
Cbey OP-69 Vc3c4 OP-13 gmuy OP-52 re M-29
Cbez OP-70 Vc4c1 OP-14 gmuz OP-53 region I-4
IRBC OP-28 Vce OP-7 gout OP-82 repi M-53
IRCBLI OP-31 Ve1e OP-15 gpix OP-48 rth M-90
IRCBLX OP-30 XCbcex OP-75 gpiy OP-49 sbeb M-56
IRCC OP-29 XIex OP-25 gpiz OP-50 sbjn M-55
IRE OP-27 XQex OP-43 grbvx OP-59 scrcv M-36
Iavl OP-26 XQtex OP-41 grbvy OP-60 sfh M-28
Ib OP-2 Xgmuex OP-55 grbvz OP-61 sw M-60
Ib1 OP-19 XiWepi OP-89 grcvy OP-56 taub M-63
Ib1b2 OP-18 ab M-70 grcvz OP-57 taue M-62
Ib2 OP-22 ac M-74 gx OP-44 taur M-65
Ib3 OP-23 acbl M-75 gy OP-45 tempeff O-1
Ic OP-1 ae M-69 gz OP-46 tepi M-64
Ic1c2 OP-17 aepi M-72 ibf M-13 tnom M-97
Ie OP-3 aex M-73 ibr M-23 tr M-98
Iex OP-24 af M-86 ihc M-37 tref M-3
In OP-16 aisat M-76 ik M-9 trise I-3
Iqs OP-88 alfaw M-59 imax M-96 tvgeb M-84
Izteb OP-21 aqbo M-68 is M-8 type M-95
Pdiss OP-91 area I-6 isat M-52 vavl M-27
Qb1b2 OP-39 ath M-92 izeb M-20 vdc M-45
Qbc OP-36 avgeb M-83 kavl M-89 vde M-40
Qbe OP-35 axi M-38 kf M-87 vef M-11
Qe OP-32 beta OP-81 kfn M-88 ver M-10
Qepi OP-38 bf M-12 level M-1 vgb M-79
Qex OP-42 bri M-22 m I-5 vgc M-80
Qtc OP-37 cbco M-50 mc M-48 vgj M-81
Qte OP-33 cbeo M-43 meff O-2 vgzeb M-82
Qtex OP-40 cjc M-44 mf M-18 vlr M-24
RB OP-84 cje M-39 mhf M-15 vos M-51
RBC OP-63 compatible M-99 mhr M-17 wavl M-26
RCBLI OP-66 cth M-91 mlf M-14 xcjc M-49
RCBLX OP-65 dais M-71 mlr M-16 xcje M-42
RCC OP-64 deg M-66 mtau M-61 xext M-25
RE OP-62 dta M-4 mult I-1 xibi M-19
Rbv OP-58 dtmax M-93 nvdr M-58 xp M-47
SCbe OP-67 dvgbf M-77 nzeb M-21 xrec M-67

JFETIDG Model (jfetidg)

JFETIDG is a compact model for four-terminal (that is, independent dual-gate) JFETs that is applicable to all regions of operation. It can also be applied to:

This chapter contains the following information for the JFETIDG model:

Model Concepts

A cross-section of an n-channel device that can be modeled by JFETIDG is shown below (the thicker dashed lines represent the edges of the depletion regions in the channel region, from both the bottom and top gates; the metallurgical thickness of the channel is tm).

JFETIDG uses a unified, physical formulation for depletion pinching of the conducting channel that is applicable to both pn-junction gates and MOS gates, and independent of gate type (apart from how the JFETIDG model parameters are computed from physical parameters). JFETIDG uses an exact solution for depletion pinching modulation of the channel current Ids, which is more accurate than linearizing with respect to the mid-point-potential. JFETIDG also models:

The large-signal equivalent circuit for JFETIDG is shown below.

The power generated by the electrical part of JFETIDG (the left side of the network above), Ith, drives the thermal part of JFETIDG (the right side of the network above), and the behavior of the electrical part depends on the local temperature rise, Temp(dt), generated by the thermal part. The electrical and thermal parts are solved self-consistently. The parasitic capacitances include both linear components (for MOS gates) and non-linear components (for pn-junction gates); The parasitic currents include pn-junction, breakdown, and impact ionization components; these are only applicable to pn-junction gates so are turned off for MOS gates.

Terminology and Notation

non-pinch-off

operation when neither end of a device is pinched off (analogous to MOSFET strong inversion non-saturation)

drain pinch-off

operation when one end of a device is pinched off (analogous to MOSFET strong inversion saturation)

source pinch-off

operation when both ends of a device are pinched off (analogous to MOSFET weak inversion)

Vds

voltage across the intrinsic body portion of the device V(di)-V(si)

Ids

current through the intrinsic body portion of the device (see equivalent circuit below)

Vgbs

bottom-gate to intrinsic source voltage V(gb)-V(si)

Vgbd

bottom-gate to intrinsic drain voltage V(gb)-V(di)

Vgts

top-gate to intrinsic source voltage V(gt)-V(si)

Vgtd

top-gate to intrinsic drain voltage V(gt)-V(di)

[sd]

applies for both source and drain

[bt]

applies for both bottom and top gate

[ap]

applies for both area and perimeter components

[2]

also applies to an optional second perimeter component

Parameters and nodes are set in Courier New font. k is Boltzmann's constant, q is the magnitude of the electronic charge, and ni is the intrinsic carrier concentration. The thermal voltage is t=kT/q

where

For convenience, and to be able to help debug circuit problems and understand what is the dominant source of nonlinearity, the physical effects can be turned off individually.

Any combination of sources of nonlinearity can be switched off by appropriate specification of these parameters.

Model Version

SPECTRE supports JFETIDG model version 1.0.0.

Component Statements

This device is supported within altergroups.

Instance Definition

Name ( d gb s gt [dt] ) ModelName <parameter=value> ...

Instance Parameters

1

w=1e-06 m

Design width of JFET body.

2

l=1e-06 m

Design length of JFET body.

3

wd=0 m

Dogbone width (total; not per side).

4

asb=0 m^2

Area of source to bottom gate.

5

ast=0 m^2

Area of source to top gate.

6

psb=0 m

Perimeter of source to bottom gate.

7

psb2=0 m

Perimeter of source to bottom gate (2nd component).

8

pst=0 m

Perimeter of source to top gate.

9

pst2=0 m

Perimeter of source to top gate (2nd component).

10

cs=0

Number of contacts at source end.

11

adb=0 m^2

Area of drain to bottom gate.

12

adt=0 m^2

Area of drain to top gate.

13

pdb=0 m

Perimeter of drain to bottom gate.

14

pdb2=0 m

Perimeter of drain to bottom gate (2nd component).

15

pdt=0 m

Perimeter of drain to top gate.

16

pdt2=0 m

Perimeter of drain to top gate (2nd component).

17

cd=0

Number of contacts at drain end.

18

trise=0 degC

Local temperature delta to ambient (before self-heating).

19

dta=0 degC

Local temperature delta to ambient (before self-heating).

20

dtemp=0 degC

Local temperature delta to ambient (before self-heating).

21

nsmm_rsh=0

Number of standard deviations of local variation for rsh.

22

nsmm_w=0

Number of standard deviations of local variation for w.

23

nsmm_l=0

Number of standard deviations of local variation for l.

24

mult=1

Multiplicity factor.

25

swnoise=1

Switch to include noise: 0=no and 1=yes.

26

swet=1

Switch to include self-heating:   0=no and 1=yes.

27

swlin=0

Switch to force linearity: 0=no and 1=yes.

28

swmman

Switch to enable mismatch analysis: 0=no and 1=yes.

29

m=1

Alias of mult.

The switch parameters can also be specified as model parameters, and a value specified on an instance line overrides a value specified on a model card.

The following figure shows how the instance parameters should be determined for a typical JFET layout.

The end region dogbone may be asymmetric between the two sides.

The total width of the source end region is:

where the contact width, contact spacing, and contact-to-edge distances, wc, wc2c, and wc2e, respectively, are shown in the layout.

If cs is zero (which happens for non-end sections of a multi-section model) then as[bt] and ps[bt] should be calculated as half of the area and length direction perimeter, respectively, of the body of the JFET (that is, 0.5·w·l and l, respectivey). If cs is greater than zero then the area and (non-body adjacent) perimeter of the left end region should be added to these values. Similarly for ad[bt] and pd[bt].

Model Definition

model ModelName jfetidg <parameter=value> ...

Model Parameters

The naming convention for parameters follows the PSP style. Global model parameters append o, l, w, lw, and so on, to the name of the associated local geometry model parameter.

1

level=1

Model level.

2

paramchk=0

Model parameter checking selector.

3

version=1

Model version.

4

subversion=0

Model subversion.

5

revision=2

Model revision.

6

tmin=100 degC

Minimum ambient temperature.

7

tmax=500 degC

Maximum ambient temperature.

8

gmin=1e-12 S

Minimum parasitic conductance.

9

imax=1 A

Current at which to linearize diode currents.

10

scale=1

Scale factor for instance geometries.

11

shrink=0 %

Shrink percentage for instance geometries.

12

rthresh=0.001 Ω

Threshold to switch end resistance to V=I*R form.

13

type=n

JFET type: +1=n-body and -1=p-body. Possible values are n and p.

14

swbgmos=0

Switch to indicate bottom gate type: 0=pn-junction and 1=mos.

15

swtgmos=0

Switch to indicate top gate type: 0=pn-junction and 1=mos.

16

swgeo=1

Switch for geometry modeling: 0=local and 1=global.

17

swgdep=1

Switch for geometry mapping basis: 0=drawn and 1=effective.

18

tnom=27 degC

Nominal (reference) temperature.

19

lmin=0.0 m

Minimum allowed drawn length.

20

lmax=9e+09 m

Maximum allowed drawn length.

21

wmin=0.0 m

Minimum allowed drawn width.

22

wmax=9.9e+09 m

Maximum allowed drawn width.

23

jmax=1e+08 A/m

Maximum current density.

24

vmax=9.9e09 V

Maximum drain or source voltage w.r.t. either gate.

25

tminclip=(-100) degC

Clip minimum temperature.

26

tmaxclip=800 degC

Clip maximum temperature.

27

grpo=1e-12

Minimum body conductance in pinch-off (ratio w.r.t. Vc=0).

28

xw=0 m

Width offset (total).

29

nwxw=0 m

Narrow width offset correction coefficient.

30

wexw=0 m

Webbing effect width offset correction coefficient (for dogboned devices).

31

fdrwo=1e-06 m

Finite doping width offset reference width.

32

fdxwo=0 m

Finite doping width offset width value for wide devices.

33

xl=0 m

Length offset (total).

34

xlw=0 m

Width dependence of length offset.

35

dxlsat=0 m

Additional length offset for velocity saturation calculation.

36

tm=5e-07 m

Channel thickness (metallurgical).

37

nc=1e+23 /m^3

Channel doping concentration.

38

nb=1e+22 /m^3

Bottom-gate doping concentration.

39

toxb=4e-07 m

Bottom-gate oxide thickness.

40

vfbb=0 V

Bottom-gate flatband voltage.

41

nt=1e+26 /m^3

Top-gate doping concentration.

42

toxt=4e-07 m

Top-gate xide thickness.

43

vfbt=0 V

Top-gate flatband voltage.

44

dfb=0.01 /V^0.5

Bottom-gate depletion factor (overrides calculation if specified).

45

dfbo=0.01 /V^0.5

dfb geometry independent part.

46

dfbl=0

dfb 1/l coefficient.

47

dfble=1

dfb 1/l exponent.

48

dfbw=0

dfb 1/w coefficient.

49

dfbwe=1

dfb 1/w exponent.

50

dfblw=0

dfb 1/(l*w) coefficient.

51

dfbfac=1

dfb adjustment coefficient.

52

psirb=2 V

Bottom-gate depletion potential (overrides calculation if specified).

53

psirbo=2 V

psirb geometry independent part.

54

psirbl=0

psirb 1/l coefficient.

55

psirble=1

psirb 1/l exponent.

56

psirbw=0

psirb 1/w coefficient.

57

psirbwe=1

psirb 1/w exponent.

58

psirblw=0

psirb 1/(l*w) coefficient.

59

psirbfac=1

psirb adjustment coefficient.

60

dft=0.01 /V^0.5

Top-gate depletion factor (overrides calculation if specified).

61

dfto=0.01 /V^0.5

dft geometry independent part.

62

dftl=0.0

dft 1/l coefficient.

63

dftle=1.0

dft 1/l exponent.

64

dftw=0.0

dft 1/w coefficient.

65

dftwe=1.0

dft 1/w exponent.

66

dftlw=0.0

dft 1/(l*w) coefficient.

67

dftfac=1.0

dft adjustment coefficient.

68

psirt=2.0 V

Top-gate depletion potential (overrides calculation if specified).

69

psirto=2.0 V

psirt geometry independent part.

70

psirtl=0.0

psirt 1/l coefficient.

71

psirtle=1.0

psirt 1/l exponent.

72

psirtw=0.0

psirt 1/w coefficient.

73

psirtwe=1.0

psirt 1/w exponent.

74

psirtlw=0.0

psirt 1/(l*w) coefficient.

75

psirtfac=1.0

psirt adjustment coefficient.

76

mu0=0.05 m^2/V/s

Low-field mobility

77

r0=100 Ohm

Zero-bias resistance.

78

rsh0=100 Ohm/sq

Zero-bias sheet resistance (overrides calculation if specified).

79

rzd=100 Ohm

Zero-depletion resistance.

80

rshzd=100 Ohm/sq

Zero-depletion sheet resistance (overrides calculation if specified).

81

rcs=0 Ohm

Source contact resistance.

82

rcd=0 Ohm

Drain contact resistance.

83

rc=0 Ohm

Resistance per contact.

84

rcw=0 Ohm

Width adjustment for contact resistance.

85

diblb=0

Bottom-gate dibl.

86

diblbl=0

diblb l dependence coefficient.

87

diblt=0

Top-gate dibl.

88

dibltl=0

diblt l dependence coefficient.

89

diblle=1

dibl l dependence exponent.

90

diblv=0.1 V

dibl voltage offset.

91

dible=0.5

dibl voltage exponent.

92

clm1=0

clm linear component.

93

clm1l=0

clm1 l dependence coefficient.

94

clm1le=1

clm1 l dependence exponent.

95

clm1c=0 /V

clm1 V(gx) dependence coefficient.

96

clm2=0

clm nonlinear component.

97

clm2l=0

clm2 l dependence coefficient.

98

clm2le=1

clm2 l dependence exponent.

99

clm2v=0.1 V

clm2 voltage offset.

100

clm2e=0.5

clm2 voltage exponent.

101

ats=0.0 V

Saturation smoothing parameter.

102

atso=0 V

ats geometry independent part.

103

atsl=0 V

ats 1/l coefficient.

104

axs=0

Second saturation smoothing parameter.

105

axso=0

axs geometry independent part.

106

axsl=0

axs 1/l coefficient.

107

nspo=1

Slope parameter under source pinch-off.

108

nspoo=1

nspo geometry independent part.

109

nspol=0

nspo 1/l coefficient.

110

nspole=1

nspo 1/l exponent.

111

nspow=0

nspo 1/w coefficient.

112

nspowe=1

nspo 1/w exponent.

113

nspolw=0

nspo 1/(l*w) coefficient.

114

alphab=0 /V

Bottom-gate impact ionization current prefactor.

115

alphabo=0 /V

alphab geometry independent part.

116

alphabl=0 /V

alphab 1/l coefficient.

117

alphat=0 /V

Top-gate impact ionization current prefactor.

118

alphato=0 /V

alphat geometry independent part.

119

alphatl=0 /V

alphat 1/l coefficient.

120

beta=10 V

Impact ionization current exponent for both gates.

121

mumb=0 /V

Bottom-gate mobility modulation coefficient.

122

mumboff=0 V

Bottom-gate mobility modulation voltage offset.

123

mumbs=1

Bottom-gate mobility modulation smoothing parameter.

124

mumbe=1

Bottom-gate mobility modulation exponent.

125

mumbo=0 /V

mumb geometry independent part.

126

mumbl=0

mumb 1/l coefficient.

127

mumbw=0

mumb 1/w coefficient.

128

mumblw=0

mumb 1/(l*w) coefficient.

129

mumt=0 /V

Top-gate mobility modulation coefficient.

130

mumtoff=0 V

Top-gate mobility modulation voltage offset.

131

mumts=1

Top-gate mobility modulation smoothing parameter.

132

mumte=1

Top-gate mobility modulation exponent.

133

mumto=0 /V

mumt geometry independent part.

134

mumtl=0

mumt 1/l coefficient.

135

mumtw=0

mumt 1/w coefficient.

136

mumtlw=0

mumt 1/(l*w) coefficient.

137

mumii1=0 /V^2

Linear impact ionization mobility modulation coefficient.

138

mumii2=0 /V^4

Quadratic impact ionization mobility modulation coefficient.

139

vcrit=4 V

Velocity saturation critical voltage.

140

ecrit=4e+06 V/m

Velocity saturation critical field.

141

vcorn=0.4 V

Velocity saturation corner voltage.

142

ecorn=4e+05 V/m

Velocity saturation corner field.

143

du=0.02

Mobility reduction at ecorn.

144

voffspo=0

Source pinchoff offset (number of nspo*phi_t).

145

moffspo=1

Source pinchoff smoothing factor.

146

gth=0 W/K

Thermal conductance.

147

gtho=0 W/K

gth geometry independent part.

148

gthp=0 W/K/m

gth perimeter component.

149

gtha=0 W/K/m2

gth area component.

150

gthc=0 W/K

gth contact component.

151

cth=0 s W/K

Thermal capacitance.

152

ctho=0 s W/K

cth geometry independent part.

153

cthp=0 s W/K/m

cth perimeter component.

154

ctha=0 s W/K/m2

cth area component.

155

cthc=0 s W/K

cth contact component.

156

fc=0.9

Ddepletion capacitance linearization factor.

157

isab=0 A/m2

Bottom-gate diode saturation current per unit area.

158

nab=1

Bottom-gate ideality factor for isa.

159

cab=0 F/m2

Bottom-gate fixed capacitance per unit area.

160

cjab=0 F/m2

Bottom-gate depletion capacitance per unit area.

161

pab=0.75 V

Bottom-gate built-in potential for cja.

162

mab=0.33

Bottom-gate grading coefficient for cja.

163

ajab=-0.5 V

Bottom-gate smoothing parameter for cja.

164

ispb=0 A/m

Bottom-gate diode saturation current per unit perimeter.

165

npb=1

Bottom-gate ideality factor for isp.

166

cpb=0 F/m

Bottom-gate fixed capacitance per unit perimeter.

167

cpb2=0 F/m

Bottom-gate fixed capacitance per unit perimeter (2nd component).

168

cjpb=0 F/m

Bottom-gate depletion capacitance per unit perimeter.

169

ppb=0.75 V

Bottom-gate built-in potential  for cjp.

170

mpb=0.33

Bottom-gate grading coefficient for cjp.

171

ajpb=-0.5 V

Bottom-gate smoothing parameter for cjp.

172

ttb=0 s

Bottom-gate transit time for diffusion charge.

173

vbvb=0 V

Bottom-gate breakdown voltage.

174

nbvb=1

Bottom-gate ideality factor for breakdown current.

175

isat=0 A/m2

Top-gate diode saturation current per unit area.

176

nat=1

Top-gate ideality factor for isa.

177

cat=0 F/m2

Top-gate fixed capacitance per unit area.

178

cjat=0 F/m2

Top-gate depletion capacitance per unit area.

179

pat=0.75 V

Top-gate built-in potential  for cja.

180

mat=0.33

Top-gate grading coefficient for cja.

181

ajat=-0.5 V

Top-gate smoothing parameter for cja.

182

ispt=0 A/m

Top-gate diode saturation current per unit perimeter.

183

npt=1

Top-gate ideality factor for isp.

184

cpt=0 F/m

Top-gate fixed capacitance per unit perimeter.

185

cpt2=0 F/m

Top-gate fixed capacitance per unit perimeter (2nd component).

186

cjpt=0 F/m

Top-gate depletion capacitance per unit perimeter.

187

ppt=0.75 V

Top-gate built-in potential  for cjp.

188

mpt=0.33

Top-gate grading coefficient for cjp.

189

ajpt=-0.5 V

Top-gate smoothing parameter for cjp.

190

ttt=0 s

Top-gate transit time for diffusion charge.

191

vbvt=0 V

Top-gate breakdown voltage.

192

nbvt=1

Top-gate ideality factor for breakdown current.

193

ibv=1e-06 A

Current at breakdown.

194

kfn=0 m2

Flicker noise coefficient.

195

afn=2

Flicker noise current exponent.

196

bfn=1

Flicker noise 1/f exponent.

197

swfngeo=0

Switch for flicker noise geometry calculation: 0=drawn and 1=effective.

198

tc1psirb=0 /K

psirb linear TC.

199

tc2psirb=0 /K2

psirb quadratic TC.

200

tc1psirt=0 /K

psirt linear TC.

201

tc2psirt=0 /K2

psirt quadratic TC.

202

tc1=0 /K

Resistance linear TC.

203

tc2=0 /K2

Resistance quadratic TC.

204

tc1o=0 /K

tc1 geometry independent part.

205

tc2o=0 /K2

tc2 geometry independent part.

206

tc1w=0 m/K

tc1 1/w coefficient.

207

tc2w=0 m/K2

tc2 1/w coefficient.

208

tc1l=0 m/K

tc1 1/l coefficient.

209

tc2l=0 m/K2

tc2 1/l coefficient.

210

tc1lw=0 m2/K

tc1 1/(l*w) coefficient.

211

tc2lw=0 m2/K2

tc2 1/(l*w) coefficient.

212

tsl=0 /K

Slope of resistance change compared to temperature at low temperature.

213

tsh=0 /K

Slope of resistance change compared to temperature at high temperature.

214

tsct=100 degC

Critical temperature where resistance change slope goes from tsl to tsh.

215

tssm=10 degC

Resistance change slope smoothing parameter.

216

tslo=0 /K

tsl geometry independent part.

217

tsho=0 /K

tsh geometry independent part.

218

tscto=100 degC

tsct geometry independent part.

219

tssmo=10 degC

tssm geometry independent part.

220

tslw=0 m/K

tsl  1/w coefficient.

221

tshw=0 m/K

tsh  1/w coefficient.

222

tsctw=0 m degC

tsct 1/w coefficient.

223

tssmw=0 m degC

tssm 1/w coefficient.

224

tsll=0 m/K

tsl 1/l coefficient.

225

tshl=0 m/K

tsh 1/l coefficient.

226

tsctl=0 m degC

tsct 1/l coefficient.

227

tssml=0 m degC

tssm 1/l coefficient.

228

tsllw=0 m2/K

tsl 1/(l*w) coefficient.

229

tshlw=0 m2/K

tsh 1/(l*w) coefficient.

230

tsctlw=0 m2 degC

tsct 1/(l*w) coefficient.

231

tssmlw=0 m2 degC

tssm 1/(l*w) coefficient.

232

tc1rc=0 /K

Contact resistance linear TC.

233

tc2rc=0 /K2

Contact resistance quadratic TC.

234

xbeta=0

Exponent for impact ionization current exponent temperature dependence.

235

tegth=0

Thermal conductance temperature exponent.

236

xvsat=0

Exponent for saturation velocity temperature dependence.

237

xvsato=0

xvsat geometry independent part.

238

xvsatl=0

xvsat 1/l coefficient.

239

xvsatle=1

xvsat 1/l exponent.

240

ea=1.12 V

Activation voltage for diode temperature dependence.

241

xis=3

Exponent for diode temperature dependence.

242

tc1vbvb=0 /K

Breakdown voltage linear TC (bottom gate).

243

tc2vbvb=0 /K2

Breakdown voltage quadratic TC (bottom gate).

244

tc1nbvb=0 /K

Breakdown ideality factor linear TC (bottom gate).

245

tc1vbvt=0 /K

Breakdown voltage linear TC (top gate).

246

tc2vbvt=0 /K2

Breakdown voltage quadratic TC (top gate).

247

tc1nbvt=0 /K

Breakdown ideality factor linear TC (top gate).

248

tc1kfn=0 /K

Flicker noise coefficient linear TC.

249

nsig_rsh=0

Number of standard deviations of global variation for rsh.

250

nsig_w=0

Number of standard deviations of global variation for w.

251

nsig_l=0

Number of standard deviations of global variation for l.

252

sig_rsh=0 %

Global variation standard deviation for rsh (relative).

253

sig_w=0 m

Global variation standard deviation for w (absolute).

254

sig_l=0 m

Global variation standard deviation for l (absolute).

255

smm_rsh=0 %m

Local variation standard deviation for rsh (relative).

256

smm_w=0 m^1.5

Local variation standard deviation for w (absolute).

257

smm_l=0 m^1.5

Local variation standard deviation for l (absolute).

258

swmmgdep=0

Switch for mismatch geometry calculation: 0=drawn and 1=effective.

259

swnoise=1

Switch to include noise: 0=no and 1=yes.

260

swet=1

Switch to include self-heating:   0=no and 1=yes.

261

swlin=0

Switch to force linearity: 0=no and 1=yes.

262

swmman=0

Switch to enable mismatch analysis: 0=no and 1=yes.

263

tref (degC)

Alias of tnom.

264

tr (degC)

Alias of tnom.

265

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica,  and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating Point Parameters

1

jtype

JFET type: +1=n-body and -1=p-body.

2

leff_m (m

Effective electrical length.

3

weff_m (m)

Effective electrical width.

4

rth (K/W)

Thermal resistance at ambient temperature.

5

cth_i (s W/K)

Thermal capacitance.

6

v (V)

Voltage across JFET.

7

ids (A)

Current through JFET body.

8

r_dc ()

DC resistance (including bias and temperature dependence).

9

r_ac ()

AC resistance (including bias and temperature dependence).

10

cgbs (F)

Bottom-gate to source capacitance.

11

cgbd (F)

Bottom-gate to drain  capacitance.

12

cgts (F)

Top-gate to source capacitance.

13

cgtd (F)

Top-gate to drain capacitance.

14

vsp (V)

Source voltage difference w.r.t. to pinch-off.

15

vdsat (V)

Drain-source saturation voltage.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

Cgbd OP-11 diblt M-87 nspolw M-113 tc1psirb M-198
Cgbs OP-10 dibltl M-88 nspoo M-108 tc1psirt M-200
Cgtd OP-13 diblv M-90 nspow M-111 tc1rc M-232
Cgts OP-12 dta I-19 nspowe M-112 tc1vbvb M-242
Ids OP-7 dtemp I-20 nt M-41 tc1vbvt M-245
Vdsat OP-15 du M-143 nwxw M-29 tc1w M-206
Vsp OP-14 dxlsat M-35 pab M-161 tc2 M-203
adb I-11 ea M-240 paramchk M-2 tc2l M-209
adt I-12 ecorn M-142 pat M-179 tc2lw M-211
afn M-195 ecrit M-140 pdb I-13 tc2o M-205
ajab M-163 fc M-156 pdb2 I-14 tc2psirb M-199
ajat M-181 fdrwo M-31 pdt I-15 tc2psirt M-201
ajpb M-171 fdxwo M-32 pdt2 I-16 tc2rc M-233
ajpt M-189 gmin M-8 ppb M-169 tc2vbvb M-243
alphab M-114 grpo M-27 ppt M-187 tc2vbvt M-246
alphabl M-116 gth M-146 psb I-6 tc2w M-207
alphabo M-115 gtha M-149 psb2 I-7 tegth M-235
alphat M-117 gthc M-150 psirb M-52 tempeff O-1
alphatl M-119 gtho M-147 psirbfac M-59 tm M-36
alphato M-118 gthp M-148 psirbl M-54 tmax M-7
asb I-4 ibv M-193 psirble M-55 tmaxclip M-26
ast I-5 imax M-9 psirblw M-58 tmin M-6
ats M-101 isab M-157 psirbo M-53 tminclip M-25
atsl M-103 isat M-175 psirbw M-56 tnom M-18
atso M-102 ispb M-164 psirbwe M-57 toxb M-39
axs M-104 ispt M-182 psirt M-68 toxt M-42
axsl M-106 jmax M-23 psirtfac M-75 tr M-264
axso M-105 jtype OP-1 psirtl M-70 tref M-263
beta M-120 kfn M-194 psirtle M-71 trise I-18
bfn M-196 l I-2 psirtlw M-74 tsct M-214
cab M-159 leff_m OP-2 psirto M-69 tsctl M-226
cat M-177 level M-1 psirtw M-72 tsctlw M-230
cd I-17 lmax M-20 psirtwe M-73 tscto M-218
cjab M-160 lmin M-19 pst I-8 tsctw M-222
cjat M-178 m I-29 pst2 I-9 tsh M-213
cjpb M-168 mab M-162 r0 M-77 tshl M-225
cjpt M-186 mat M-180 r_ac OP-9 tshlw M-229
clm1 M-92 meff O-2 r_dc OP-8 tsho M-217
clm1c M-95 moffspo M-145 rc M-83 tshw M-221
clm1l M-93 mpb M-170 rcd M-82 tsl M-212
clm1le M-94 mpt M-188 rcs M-81 tsll M-224
clm2 M-96 mu0 M-76 rcw M-84 tsllw M-228
clm2e M-100 mult I-24 revision M-5 tslo M-216
clm2l M-97 mumb M-121 rsh0 M-78 tslw M-220
clm2le M-98 mumbe M-124 rshzd M-80 tssm M-215
clm2v M-99 mumbl M-126 rth OP-4 tssml M-227
compatible M-265 mumblw M-128 rthresh M-12 tssmlw M-231
cpb M-166 mumbo M-125 rzd M-79 tssmo M-219
cpb2 M-167 mumboff M-122 scale M-10 tssmw M-223
cpt M-184 mumbs M-123 shrink M-11 ttb M-172
cpt2 M-185 mumbw M-127 sig_l M-254 ttt M-190
cs I-10 mumii1 M-137 sig_rsh M-252 type M-13
cth M-151 mumii2 M-138 sig_w M-253 v OP-6
cth_i OP-5 mumt M-129 smm_l M-257 vbvb M-173
ctha M-154 mumte M-132 smm_rsh M-255 vbvt M-191
cthc M-155 mumtl M-134 smm_w M-256 vcorn M-141
ctho M-152 mumtlw M-136 subversion M-4 vcrit M-139
cthp M-153 mumto M-133 swbgmos M-14 version M-3
dfb M-44 mumtoff M-130 swet I-26 vfbb M-40
dfbfac M-51 mumts M-131 swet M-260 vfbt M-43
dfbl M-46 mumtw M-135 swfngeo M-197 vmax M-24
dfble M-47 nab M-158 swgdep M-17 voffspo M-144
dfblw M-50 nat M-176 swgeo M-16 w I-1
dfbo M-45 nb M-38 swlin I-27 wd I-3
dfbw M-48 nbvb M-174 swlin M-261 weff_m OP-3
dfbwe M-49 nbvt M-192 swmman I-28 wexw M-30
dft M-60 nc M-37 swmman M-262 wmax M-22
dftfac M-67 npb M-165 swmmgdep M-258 wmin M-21
dftl M-62 npt M-183 swnoise I-25 xbeta M-234
dftle M-63 nsig_l M-251 swnoise M-259 xis M-241
dftlw M-66 nsig_rsh M-249 swtgmos M-15 xl M-33
dfto M-61 nsig_w M-250 tc1 M-202 xlw M-34
dftw M-64 nsmm_l I-23 tc1kfn M-248 xvsat M-236
dftwe M-65 nsmm_rsh I-21 tc1l M-208 xvsatl M-238
diblb M-85 nsmm_w I-22 tc1lw M-210 xvsatle M-239
diblbl M-86 nspo M-107 tc1nbvb M-244 xvsato M-237
dible M-91 nspol M-109 tc1nbvt M-247 xw M-28
diblle M-89 nspole M-110 tc1o M-204

Long Channel JFET/MOSFET Model (mos30)

This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.95) as MOS model, level 30 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.

Note: In noise analysis, mos30 instances will not generate any contribution, since there are no noise sources included in the mos30 model.

Warning: Dont use this model. It is obsolete.

Mos30 will be removed from spectre in the next release.

(c) Philips Electronics N.V. 1993, 1994, 1996

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

mn30 (1 2 0 0) nchmod area=2 mult=1

Sample Model Statement

model nchmod mos30 type=n tox=1.1e-5 ron=150 rsat=500 psat=2 vsat=1 vsub=0.59 cgate=1.65e-12 csub=1.1e-9 tref=25

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

area=1

Alias of mult.

3

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.

4

m=1

Multiplicity factor.

Model Definition

model modelName mos30 parameter=value ...

Model Parameters

1

type=n

Transistor gender. Possible values are n or p.

2

ron=1.0

Ohmic resistance at zero bias.

3

rsat=1.0

Space charge resistance at zero bias.

4

vsat=10.0 V

Critical drain-source voltage for hot carriers.

5

psat=1.0

Velocity saturation coefficient.

6

vp=-1.0 V

Pinch off voltage at zero gate and substrate voltages.

7

tox=-1.0 cm

Gate oxide thickness.

8

dch=1.0e15 cm-3

Doping level channel.

9

dsub=1.0e15 cm-3

Doping level substrate.

10

vsub=0.6 V

Substrate diffusion voltage.

11

vgap=1.2 V

Bandgap voltage channel.

12

cgate=0.0 F

Gate capacitance at zero bias.

13

csub=0.0 F

Substrate capacitance at zero bias.

14

tausc=0.0 s

Space charge transit time of the channel.

15

ach=0.0

Temperature coefficient resistivity of the channel.

16

kf=0.0

Flickernoise coefficient.

17

af=1.0

Flickernoise exponent.

18

tr (C)

Reference temperature. Default set by option tnom.

19

tref (C)

Alias of tr. Default set by option tnom.

20

tnom (C)

Alias of tr. Default set by option tnom.

21

dta=0.0 K

Temperature offset of the device.

22

trise=0.0 K

Alias of dta.

Output Parameters

1

ront ()

Ohmic resistance at zero bias.

2

rsat ()

Space charge resistance at zero bias.

3

vsatt (V)

Critical drain-source voltage for hot carriers.

4

vsubt (V)

Substrate diffusion voltage.

5

cgate (F)

Gate capacitance at zero bias.

6

csubt (F)

Substrate capacitance at zero bias.

Operating-Point Parameters

1

pwr (W)

Power.

2

ids (A)

Total current including velocity saturation.

3

qb (Coul)

Substrate charge.

4

qg (Coul)

Gate charge.

5

qds (Coul)

Space charge in the channel.

6

gdsd (S)

Conductance (d ids / d vd).

7

gdsg (S)

Conductance (d ids / d vg).

8

gdss (S)

Conductance (d ids / d vs).

9

gdsb (S)

Conductance (d ids / d vb).

10

cbd (F)

Capacitance (d qb / d vd).

11

cbg (F)

Capacitance (d qb / d vg).

12

cbs (F)

Capacitance (d qb / d vs).

13

cbb (F)

Capacitance (d qb / d vb).

14

cgd (F)

Capacitance (d qg / d vd).

15

cgg (F)

Capacitance (d qg / d vg).

16

cgs (F)

Capacitance (d qg / d vs).

17

cgb (F)

Capacitance (d qg / d vb).

18

cdsd (F)

Capacitance (d qds / d vd).

19

cdsg (F)

Capacitance (d qds / d vg).

20

cdss (F)

Capacitance (d qds / d vs).

21

cdsb (F)

Capacitance (d qds / d vb).

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

ach      M-15
cgd      OP-14
m      I-4
tox      M-7
af      M-17
cgg      OP-15
mult      I-1
tr      M-18
area      I-2
cgs      OP-16
psat      M-5
tref      M-19
cbb      OP-13
csub      M-13
pwr      OP-1
trise      M-22
cbd      OP-10
csubt      O-6
qb      OP-3
type      M-1
cbg      OP-11
dch      M-8
qds      OP-5
vgap      M-11
cbs      OP-12
dsub      M-9
qg      OP-4
vp      M-6
cdsb      OP-21
dta      M-21
region      I-3
vsat      M-4
cdsd      OP-18
gdsb      OP-9
ron      M-2
vsatt      O-3
cdsg      OP-19
gdsd      OP-6
ront      O-1
vsub      M-10
cdss      OP-20
gdsg      OP-7
rsat      M-3
vsubt      O-4
cgate      M-12
gdss      OP-8
rsat      O-2
cgate      O-5
ids      OP-2
tausc      M-14
cgb      OP-17
kf      M-16
tnom      M-20

MOS Model 40, Level 40 (mos40t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

Model Definition

model modelName mos40t parameter=value ...

Model Parameters

1

level=40

Level of this model.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

vbdblow=0 V

Low limit of drain-bulk voltage

6

vbdbhigh=0 V

High limit of drain-bulk voltage.

7

vbsblow=0 V

Low limit of source-bulk voltage.

8

vbsbhigh=0 V

High limit of source-bulk voltage.

9

vballmsg=1

All ovcheck messages if set to 1.

10

tmin=0 s

Ovcheck tmin value.

11

tdelay=0 s

Stop simulation on overvoltage when STOP==1.

12

stop=0

Ohmic resistance at zero bias.

13

ron=1

Ohmic resistance at zero bias.

14

rsat=1

Space charge resistance at zero bias.

15

vsat=10 V

Critical drain-source voltage for hot carriers.

16

psat=1

Velocity saturation coefficient.

17

vp=-1 V

Pinch off voltage at zero gate and substrate voltages.

18

tox=-1 m

Gate oxide thickness.

19

dch=1e+21 m-3

Doping level channel.

20

tbox=-1 m-3

Box oxide thickness.

21

cgate=0 F

Gate capacitance at zero bias.

22

cbox=0 F

Wafer capacitance.

23

tausc=0 s

Space charge transit time of the channel.

24

ach=0

Temperature coefficient resistivity of the channel.

25

achmod=0

Parameter to switch to extended temperature scaling.

26

achron=0

Temperature coefficient of ohmic resistance at zero bias.

27

achvsat=0

Temperature coefficient of critical drain-source voltage for hot carriers.

28

achrsat=0

Temperature coefficient of space charge resistance at zero bias.

29

tref=25 C

Reference temperature.

30

dta=0 K

Temperature offset of the device.

31

rth=300 K/W

Thermal resistance.

32

cth=3e-09 J/K

Thermal capacitance.

33

ath=0

Temperature coefficient of the thermal resistance.

34

type=n

Transistor gender. Possible values are n and p.

35

tnom (C)

Alias of tnom.

36

tr (C)

Alias of tnom.

37

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ids (A)

Drain source current.

2

vds (V)

Drain source voltage.

3

vgs (V)

Gate source voltage.

4

vbs (V)

Bulk source voltage.

5

vp (V)

Channel pinch-off voltage.

6

gm (A/V)

Transconductance.

7

gmb (A/V)

Bulk transconductance.

8

gds (A/V)

Output conductance.

9

qg (C)

Gate charge.

10

cgd (F)

Gate charge dependence on drain voltage.

11

cgg (F)

Gate charge dependence on gate voltage.

12

cgs (F)

Gate charge dependence on substrate voltage.

13

cgb (F)

Gate charge dependence on bulk voltage.

14

qb (C)

Bulk charge.

15

cbd (F)

Bulk charge dependence on drain voltage.

16

cbg (F)

Bulk charge dependence on gate voltage.

17

cbs (F)

Bulk charge dependence on substrate voltage.

18

cbb (F)

Bulk charge dependence on bulk voltage.

19

qd (C)

Drain charge.

20

cdd (F)

Drain charge dependence on drain voltage (dQd/dVd).

21

cdg (F)

Drain charge dependence on gate voltage (-dQd/dVg).

22

cds (F)

Drain charge dependence on source voltage (-dQd/dVs).

23

cdb (F)

Drain charge dependence on bulk voltage (-dQd/dVb).

24

qs (C)

Source charge.

25

csd (F)

Source charge dependence on drain voltage (-dQs/dVd).

26

csg (F)

Source charge dependence on gate voltage (-dQs/dVg).

27

css (F)

Source charge dependence on source voltage (dQs/dVs).

28

csb (F)

Source charge dependence on bulk voltage (-dQs/dVb).

29

u

Transistor gain.

30

rout ()

Small-signal output resistance.

31

vearly (V)

Equivelant early voltage.

32

iohm (A)

Drain source current excluding velocity saturation.

33

ihc (A)

Critical current for velocity saturation.

34

Pdiss (W)

Dissipation.

35

TK (K)

Actual temperature.

36

ctype

Channel type (-1 for PMOS, +1 for NMOS).

37

pwr (W)

Power.

38

mos_region

MOS region.
Possible values are off, sat, triode, and subth.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-34 cgs OP-12 paramchk M-2 tr M-36
TK OP-35 compatible M-37 printscaled I-2 tref M-29
ach M-24 csb OP-28 psat M-16 trise I-3
achmod M-25 csd OP-25 pwr OP-37 type M-34
achron M-26 csg OP-26 qb OP-14 u OP-29
achrsat M-28 css OP-27 qd OP-19 vballmsg M-9
achvsat M-27 cth M-32 qg OP-9 vbdbhigh M-6
ath M-33 ctype OP-36 qs OP-24 vbdblow M-5
cbb OP-18 dch M-19 region I-4 vbds M-4
cbd OP-15 dta M-30 ron M-13 vbox M-3
cbg OP-16 gds OP-8 rout OP-30 vbs OP-4
cbox M-22 gm OP-6 rsat M-14 vbsbhigh M-8
cbs OP-17 gmb OP-7 rth M-31 vbsblow M-7
cdb OP-23 ids OP-1 stop M-12 vds OP-2
cdd OP-20 ihc OP-33 tausc M-23 vearly OP-31
cdg OP-21 iohm OP-32 tbox M-20 vgs OP-3
cds OP-22 level M-1 tdelay M-11 vp M-17
cgate M-21 m I-5 tempeff O-1 vp OP-5
cgb OP-13 meff O-2 tmin M-10 vsat M-15
cgd OP-10 mos_region OP-38 tnom M-35
cgg OP-11 mult I-1 tox M-18

Long Channel JFET/MOSFET Model (mos3002)

This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.98) as MOS model, level 3002 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.

Note: In noise analysis, mos3002 instances will not generate any contribution, since there are no noise sources included in the mos3002 model.

(c) Philips Electronics N.V. 1993, 1994, 1996, 1998

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

mn3 (1 2 0 0) nch3002 area=1 m=2

Sample Model Statement

model nch3002 mos3002 ron=20 rsat=150 vsat=1 tox=1.23e-5 dch=1.1e16 vsub=0.58 csub=5.43e-13 tausc=1.2e-12 kf=1 tref=27 psat=1 dta=0

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

area=1

Alias of mult.

3

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.

4

m=1

Multiplicity factor.

Model Definition

model modelName mos3002 parameter=value ...

Model Parameters

1

type=n

Transistor gender. Possible values are n or p.

2

ron=1.0

Ohmic resistance at zero bias.

3

rsat=1.0

Space charge resistance at zero bias.

4

vsat=10.0 V

Critical drain-source voltage for hot carriers.

5

psat=1.0

Velocity saturation coefficient.

6

vp=-1.0 V

Pinch off voltage at zero gate and substrate voltages.

7

tox=-1.0 cm

Gate oxide thickness.

8

dch=1.0e15 cm-3

Doping level channel.

9

dsub=1.0e15 cm-3

Doping level substrate.

10

vsub=0.6 V

Substrate diffusion voltage.

11

vgap=1.2 V

Band gap voltage channel.

12

cgate=0.0 F

Gate capacitance at zero bias.

13

csub=0.0 F

Substrate capacitance at zero bias.

14

tausc=0.0 s

Space charge transit time of the channel.

15

ach=0.0

Temperature coefficient resistivity of the channel.

16

kf=0.0

Flickernoise coefficient.

17

af=1.0

Flickernoise exponent.

18

tr (C)

Reference temperature. Default set by option tnom.

19

tref (C)

Alias of tr. Default set by option tnom.

20

tnom (C)

Alias of tr. Default set by option tnom.

21

dta=0.0 K

Temperature offset of the device.

22

trise=0.0 K

Alias of dta.

Output Parameters

1

ront ()

Ohmic resistance at zero bias.

2

rsat ()

Space charge resistance at zero bias.

3

vsatt (V)

Critical drain-source voltage for hot carriers.

4

vsubt (V)

Substrate diffusion voltage.

5

cgate (F)

Gate capacitance at zero bias.

6

csubt (F)

Substrate capacitance at zero bias.

Operating-Point Parameters

1

pwr (W)

Power.

2

ids (A)

Total current including velocity saturation.

3

qb (Coul)

Substrate charge.

4

qg (Coul)

Gate charge.

5

qds (Coul)

Space charge in the channel.

6

gdsd (S)

Conductance (d ids / d vd).

7

gdsg (S)

Conductance (d ids / d vg).

8

gdss (S)

Conductance (d ids / d vs).

9

gdsb (S)

Conductance (d ids / d vb).

10

cbd (F)

Capacitance (d qb / d vd).

11

cbg (F)

Capacitance (d qb / d vg).

12

cbs (F)

Capacitance (d qb / d vs).

13

cbb (F)

Capacitance (d qb / d vb).

14

cgd (F)

Capacitance (d qg / d vd).

15

cgg (F)

Capacitance (d qg / d vg).

16

cgs (F)

Capacitance (d qg / d vs).

17

cgb (F)

Capacitance (d qg / d vb).

18

cdsd (F)

Capacitance (d qds / d vd).

19

cdsg (F)

Capacitance (d qds / d vg).

20

cdss (F)

Capacitance (d qds / d vs).

21

cdsb (F)

Capacitance (d qds / d vb).

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

ach      M-15
cgd      OP-14
m      I-4
tox      M-7
af      M-17
cgg      OP-15
mult      I-1
tr      M-18
area      I-2
cgs      OP-16
psat      M-5
tref      M-19
cbb      OP-13
csub      M-13
pwr      OP-1
trise      M-22
cbd      OP-10
csubt      O-6
qb      OP-3
type      M-1
cbg      OP-11
dch      M-8
qds      OP-5
vgap      M-11
cbs      OP-12
dsub      M-9
qg      OP-4
vp      M-6
cdsb      OP-21
dta      M-21
region      I-3
vsat      M-4
cdsd      OP-18
gdsb      OP-9
ron      M-2
vsatt      O-3
cdsg      OP-19
gdsd      OP-6
ront      O-1
vsub      M-10
cdss      OP-20
gdsg      OP-7
rsat      M-3
vsubt      O-4
cgate      M-12
gdss      OP-8
rsat      O-2
cgate      O-5
ids      OP-2
tausc      M-14
cgb      OP-17
kf      M-16
tnom      M-20

Compact MOS-Transistor Model (mos705)

The mos705 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Dec.93) as MOS model, level 705.

(c) Philips Electronics N.V. 1993, 1994

In extension to the model book description a minimum conductance gmin is inserted between the drain and source node, to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

mn1 (1 2 0 0) mna7 ln=120e-6 wn=12e-6

Sample Model Statement:

model mna7 mos705 type=n vtn=0.853 betan=77e-6 tox=15e-9 vfb=-850e-3 tref=25 subthn=3 phi=0.645 lap=100e-9 gkn=-350e-9 th1n=0.15 th2n=0.046 th3n=0.1 fnoise=1e-10

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

wn=1.0 scale m

Drawn channel width in the lay-out of the actual transistor. Scale set by option scale.

2

ln=1.0 scale m

Drawn channel length in the lay-out of the actual transistor. Scale set by option scale.

3

w=1.0 scale m

Alias for wn.

4

l=1.0 scale m

Alias for ln.

5

mult=1

Number of devices in parallel.

6

area=1

Alias of mult.

7

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat,  or subth.

8

m=1

Multiplicity factor.

9

trise=0 K

Temperature rise from ambient.

Model Definition

model modelName mos705 parameter=value ...

Model Parameters

1

type=n

Transistor gender. Possible values are n or p.

2

vtn=0 V

Threshold voltage of the reference transistor at the reference temperature.

3

kon=0 √V

Ko of the reference transistor.

4

kn=100m √V

K of the reference transistor.

5

vsbxn=0 V

Vsbx of the reference transistor.

6

delvx=0 V

Dvsbx of the reference transistor.

7

th1n=0 1/V

The1 of the reference transistor.

8

th2n=0 1/√V

The2 of the reference transistor.

9

th3n=0 1/V

The3 of the reference transistor at the reference temperature.

10

gamman=0

Gam of the reference transistor.

11

shiftn=0 V^(1-n)

Sh of the reference transistor.

12

nn=0

N of the reference transistor.

13

pn=0 1/V

P of the reference transistor.

14

ava=0

A of the reference transistor.

15

avb=1 V

B of the reference transistor.

16

avc=0

C of the reference transistor.

17

wref=100u m

Effective width of the reference transistor.

18

wtol=0 m

Difference between drawn and effective gate width.

19

dvtn=0 V m

Narrow-width factor of the threshold voltage at vsbref.

20

dkon=0 √v  m

Narrow-width factor of ko.

21

dkn=0 √v  m

Narrow-width factor of k.

22

dvsbxn=0 V m

Narrow-width factor of vsbx.

23

ddelvx=0 Vm

Narrow-width factor of dvsbx.

24

betan=20u A/V2

Gain factor of a infinite-square transistor at the reference temperature.

25

dth1n=0 m/V

Narrow-width factor of the1.

26

dth2n=0 m/√V

Narrow-width factor of the2.

27

dth3n=0 m/V

Narrow-width factor of the3.

28

dgamn=0 m

Narrow-width factor of gam.

29

dava=0 m

Narrow-width factor of a.

30

davb=0 V m

Narrow-width factor of b.

31

davc=0 m

Narrow-width factor of c.

32

lref=100u m

Effective length of the reference transistor.

33

ltol=0 m

Difference between drawn and actual gate polysilicon length.

34

gvtn=0 V m

Short-channel factor of the threshold voltage at vsbref.

35

gkon=0 √V  m

Short-channel factor of ko.

36

gkn=0 √V  m

Short-channel factor of k.

37

gvsbxn=0 V m

Short-channel factor of vsbx.

38

gdelvx=0 V m

Short-channel factor of dvsbx.

39

gth1n=0 m/V

Short-channel factor of the1.

40

gth2n=0 m/√V

Short-channel factor of the2.

41

gth3n=0 m/V

Short-channel factor of the3.

42

ggamn=0 m

Short-channel factor of gam.

43

gshift=0 V^(1-n) m2

Short-channel factor of sh.

44

gnn=0 m

Short-channel factor of n.

45

gpn=0 m/V

Short-channel factor of p.

46

gava=0 m

Short-channel factor of a.

47

gavb=0 V m

Short-channel factor of b.

48

gavc=0 m

Short-channel factor of c.

49

lap=0 m

Half of the effective channel-length reduction due to lateral diffusion.

50

vsbref=0 V

Source to bulk reference voltage for parameter determination.

51

phi=600m V

Diffusion potential at the reference temperature.

52

tcvt=-1m V/K

Temperature coefficient of vto.

53

tbetan=1.5

Power temperature coefficient of bet.

54

tth3n=0 1/(V K)

Temperature coefficient of the3.

55

tgth3n=0 m/(V K)

Temperature coefficient of the length dependence of the3.

56

m=1.0

Subthreshold-slope factor at reference back bias and at the reference temperature.

57

subthn=0

Weak-inversion factor.

58

vtr=0 V

Depletion-MOS-transistor-transition voltage.

59

ratio=0

Depletion-MOS-transistor-gain ratio.

60

vfb=0 V

Flat-band voltage.

61

tox=100n m

Gate-oxide thickness.

62

col=0 F/m

Gate/drain or gate/source overlap capacitance per unit length.

63

fnoise=0 m2 V2

Flicker-noise factor.

64

tnoise=0

Thermal-noise factor.

Temperature parameters

65

tr (C)

Reference temperature. Default set by option tnom.

66

tref (C)

Alias of tr. Default set by option tnom.

67

tnom (C)

Alias of tr. Default set by option tnom.

68

dta=0 K

Deviation between the temperature of the transistor and the temperature of the circuit.

69

trise=0 K

Alias of dta.

Output Parameters

1

weff (V)

Effective channel width of the actual transistor.

2

leff (V)

Effective channel length of the actual transistor.

3

twophif (V)

Diffusion potential.

4

bet (A/V2)

Gain factor of the transistor.

5

k (√V )

Body-effect factor.

6

ko (√V )

Initial body-effect factor for dual k approach.

7

vsbx (V)

Transition voltage for dual k approach.

8

dvsbx (V)

Transition-voltage range for dual K approach.

9

vto (V)

Threshold voltage.

10

von (V)

Onset voltage of the superthreshold region.

11

the1 (1/V)

Gate-bias-controlled transverse-field mobility reduction factor.

12

the2 (1/√V )

Back-bias-controlled transverse-field mobility reduction factor.

13

the3 (1/V)

Lateral-field mobility reduction factor (velocity saturation).

14

gam

Static-drain-feedback factor.

15

sh (V^(1-n))

Threshold-voltage-shift factor.

16

n

Threshold-voltage-shift exponent.

17

p (1/V)

Back-bias-shift factor.

18

me (√V )

Auxiliary parameter for subthreshold-slope factor.

19

a

Weak-avalanche multiplier.

20

b (V)

Weak-avalanche exponent factor.

21

c

Saturation-voltage reduction factor.

22

cox (F)

Gate capacitance.

23

cgso (F)

Gate/source-overlap capacitance.

24

cgdo (F)

Gate/drain-overlap capacitance.

25

vtre (V)

Depletion MOS transistor transition voltage.

26

ratio

Depletion MOS transistor gain ratio.

27

vfbe (V)

Flat band voltage.

28

vtemp (V)

kT/q at actual device temperature.

29

gnoise (V2)

Coefficient of the flicker noise for the actual transistor.

30

unoise (J)

Coefficient of the thermal noise for the actual transistor.

Operating-Point Parameters

1

ide (A)

Drain current.

2

ige (A)

Gate current.

3

ise (A)

Source current.

4

ibe (A)

Bulk current.

5

vds (V)

Drain-source voltage.

6

vgs (V)

Gate-source voltage.

7

vsb (V)

Source-bulk voltage.

8

ids (A)

Drain-source current.

9

idb (A)

Drain-bulk current.

10

isb (A)

Source-bulk current.

11

pwr (W)

Power.

12

vts (V)

Vto including back-bias effects.

13

vgt (V)

Effective gate drive including back-bias and drain effects.

14

vdss (V)

Saturation voltage at actual bias.

15

gm (S)

Transconductance (d ids / d vgs).

16

gmb (S)

Bulk transconductance (d ids / d vbs).

17

gds (S)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

u

Transistor gain (gm/gds).

35

rout ()

Small signal output resistance (1/gds).

36

vearly (V)

Equivalent Early voltage (|Id|/gds).

37

keff (√V )

Describes body effect at actual bias.

38

beff (S/V)

Effective beta at actual bias in the simple MOS model.

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cox)).

40

sqrtsfw (V/√Hz )

Input-referred RMS white noise voltage (sqrt(sth)/gm).

41

sqrtsff (V/√Hz )

Input-referred RMS 1/f noise voltage at 1kHz (sqrt(gnoise/1000)).

42

fknee (Hz)

Cross-over frequency above which white noise is dominant.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a      O-19
dta      M-68
k      O-5
the3      O-13
area      I-6
dth1n      M-25
keff      OP-37
tnoise      M-64
ava      M-14
dth2n      M-26
kn      M-4
tnom      M-67
avb      M-15
dth3n      M-27
ko      O-6
tox      M-61
avc      M-16
dvsbx      O-8
kon      M-3
tr      M-65
b      O-20
dvsbxn      M-22
l      I-4
tref      M-66
beff      OP-38
dvtn      M-19
lap      M-49
trise      I-9
bet      O-4
fknee      OP-42
leff      O-2
trise      M-69
betan      M-24
fnoise      M-63
ln      I-2
tth3n      M-54
c      O-21
fug      OP-39
lref      M-32
twophif      O-3
cbb      OP-33
gam      O-14
ltol      M-33
type      M-1
cbd      OP-30
gamman      M-10
m      I-8
u      OP-34
cbg      OP-31
gava      M-46
m      M-56
unoise      O-30
cbs      OP-32
gavb      M-47
me      O-18
vds      OP-5
cdb      OP-21
gavc      M-48
mult      I-5
vdss      OP-14
cdd      OP-18
gdelvx      M-38
n      O-16
vearly      OP-36
cdg      OP-19
gds      OP-17
nn      M-12
vfb      M-60
cds      OP-20
ggamn      M-42
p      O-17
vfbe      O-27
cgb      OP-25
gkn      M-36
phi      M-51
vgs      OP-6
cgd      OP-22
gkon      M-35
pn      M-13
vgt      OP-13
cgdo      O-24
gm      OP-15
pwr      OP-11
von      O-10
cgg      OP-23
gmb      OP-16
ratio      M-59
vsb      OP-7
cgs      OP-24
gnn      M-44
ratio      O-26
vsbref      M-50
cgso      O-23
gnoise      O-29
region      I-7
vsbx      O-7
col      M-62
gpn      M-45
rout      OP-35
vsbxn      M-5
cox      O-22
gshift      M-43
sh      O-15
vtemp      O-28
csb      OP-29
gth1n      M-39
shiftn      M-11
vtn      M-2
csd      OP-26
gth2n      M-40
sqrtsff      OP-41
vto      O-9
csg      OP-27
gth3n      M-41
sqrtsfw      OP-40
vtr      M-58
css      OP-28
gvsbxn      M-37
subthn      M-57
vtre      O-25
dava      M-29
gvtn      M-34
tbetan      M-53
vts      OP-12
davb      M-30
ibe      OP-4
tcvt      M-52
w      I-3
davc      M-31
idb      OP-9
tgth3n      M-55
weff      O-1
ddelvx      M-23
ide      OP-1
th1n      M-7
wn      I-1
delvx      M-6
ids      OP-8
th2n      M-8
wref      M-17
dgamn      M-28
ige      OP-2
th3n      M-9
wtol      M-18
dkn      M-21
isb      OP-10
the1      O-11
dkon      M-20
ise      OP-3
the2      O-12

Compact MOS-Transistor Model (mos902)

The mos902 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Feb.98) as MOS model, level 902. Information on how to obtain this document can be found on Source Link by searching for Philips.

(c) Philips Electronics N.V. 1993, 1998

In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

mp1 (0 1 2 2) mos9pch w=10u l=2u area=1.5

Sample Model Statement:

model mos9pch mos902 ler=0.93e-6 wer=20e-6 tref=27 vtor=1.11 kr=0.54 phibr=0.66 vsbxr=100 the1r=0.19 slk=-0.215e-6 swk=98e-9 swthe3=7.8e-9

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

w=1.0 scale m

Drawn channel width in the lay-out. Scale set by option scale.

2

l=1.0 scale m

Drawn channel length in the lay-out. Scale set by option scale.

3

mult=1

Number of devices in parallel.

4

area=1

Alias of mult.

5

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat,  or subth.

6

m=1

Multiplicity factor.

7

trise=0 K

Temperature rise from ambient.

Model Definition

model modelName mos902 parameter=value ...

Model Parameters

Device type parameters

1

type=n

Transistor gender. Possible values are n or p.

Geometry parameters

2

ler=2.5e-6 m

Effective channel length of the reference transistor.

3

wer=25e-6 m

Effective channel width of the reference transistor.

4

lvar=0.3e-6 m

Difference between the actual and the programmed poly-silicon gate length.

5

lap=0.1e-6 m

Effective channel length reduction per side.

6

wvar=3e-6 m

Difference between the actual and the programmed field-oxide opening.

7

wot=1e-6 m

Effective channel width reduction per side.

8

wdog=0 m

Characteristic drawn gate width, below which dogboning appears.

Threshold-voltage parameters

9

vtor=0.8 V

Threshold voltage at zero back-bias.

10

stvto=0.01 V/K

Coefficient of the temperature dependence of vto.

11

slvto=0.5e-6 V m

Coefficient of the length dependence of vto.

12

sl2vto=0 V m2

Second coefficient of the length dependence of vto.

13

swvto=5e-6 V m

Coefficient of the width dependence of vto.

14

kor=0.5 √V

Low-backbias body factor.

15

slko=1e-6 √V  m

Coefficient of the length dependence of ko.

16

swko=10e-6 √V  m

Coefficient of the width dependence of ko.

17

kr=0.1 √V

High-backbias body factor.

18

slk=0.5e-6 √V  m

Coefficient of the length dependence of k.

19

swk=5e-6 √V  m

Coefficient of the width dependence of k.

20

phibr=0.65 V

Surface potential at strong inversion.

21

vsbxr=0.9 V

Transition voltage for the dual-k-factor model.

22

slvsbx=0.5e-6 V m

Coefficient of the length dependence of vsbx.

23

swvsbx=5e-6 V m

Coefficient of the width dependence of vsbx.

Channel-current parameters

24

betsq=0.1e-3 A/V2

Gain factor for an infinite square transistor.

25

etabet=0.5

Exponent of the temperature dependence of the gain factor.

26

the1r=0.05 1/V

Coefficient of the mobility reduction due to the gate-induced field.

27

stthe1r=3e-3 1/(V K)

Coefficient of the temperature dependence of the1.

28

slthe1r=50e-9 m/V

Coefficient of the length dependence of the1.

29

stlthe1=5e-9 m/(V K)

Coefficient of the temperature dependence of slthe1.

30

swthe1=1e-6 m/V

Coefficient of the width dependence of the1.

31

fthe1=0

Coefficient describing the width dependence of the1 for w < wdog.

32

the2r=17e-3 1/√V

Coefficient of the mobility reduction due to the back-bias.

33

stthe2r=0.1e-3 1/(√V  K)

Coefficient of the temperature dependence of the2.

34

slthe2r=5e-9 m/√V

Coefficient of the length dependence of the2.

35

stlthe2=0.5e-9 m/(√V  K)

Coefficient of the temperature dependence of slthe2.

36

swthe2=0.1e-6 m/√V

Coefficient of the width dependence of the2.

37

the3r=37e-3 1/V

Coefficient of the mobility reduction due to the lateral field.

38

stthe3r=0.1e-3 1/(V K)

Coefficient of the temperature dependence of the3.

39

slthe3r=5e-9 m/V

Coefficient of the length dependence of the3.

40

stlthe3=0.5e-9 m/(V K)

Coefficient of the temperature dependence of slthe3.

41

swthe3=0.1e-6 m/V

Coefficient of the width dependence of the3.

Drain-feedback parameters

42

gam1r=40e-3 V^(1-etads)

Coefficient for the drain induced threshold shift for large gate drive.

43

slgam1=0.1e-6 V^(1-etads) m

Coefficient of the length dependence of gam1.

44

swgam1=1e-6 V^(1-etads) m

Coefficient of the width dependence of gam1.

45

etadsr=0.6

Exponent of the vds dependence of gam1.

46

alpr=4e-3

Factor of the channel-length modulation.

47

etaalp=0.5

Exponent of the length dependence of alp.

48

slalp=0.14e-3 m^etaalp

Coefficient of the length dependence of alp.

49

swalp=0.1e-6 m

Coefficient of the width dependence of alp.

50

vpr=0.25 V

Characteristic voltage of the channel-length modulation.

Sub-threshold parameters

51

gamoor=1.1e-3

Coefficient for the drain induced threshold shift at zero gate drive.

52

slgamoo=10e-15 m2

Coefficient of the length dependence of gamoo.

53

etagamr=2

Exponent of the back-bias dependence of gamo.

54

mor=0.3

Factor for the subthreshold slope.

55

stmo=0.01 1/K

Coefficient of the temperature dependence of mo.

56

slmo=1.4e-3 √m

Coefficient of the length dependence of mo.

57

etamr=2

Exponent of the back-bias dependence of m.

58

zet1r=0.7

Weak-inversion correction factor.

59

etazet=0.5

Exponent of the length dependence of zet1.

60

slzet1=0.14e-6 m^etazet

Coefficient of the length dependence of zet1.

61

vsbtr=99 V

Limiting voltage of the vsb dependence of m and gamo.

62

slvsbt=10e-6 V m

Coefficient of the length dependence of vsbt.

Weak-avalanche parameters

63

a1r=22

Factor of the weak-avalanche current.

64

sta1=0.1 1/K

Coefficient of the temperature dependence of a1.

65

sla1=10e-6 m

Coefficient of the length dependence of a1.

66

swa1=0.1e-3 m

Coefficient of the width dependence of a1.

67

a2r=33 V

Exponent of the weak-avalanche current.

68

sla2=10e-6 V m

Coefficient of the length dependence of a2.

69

swa2=0.1e-3 V m

Coefficient of the width dependence of a2.

70

a3r=0.6

Factor of the drain-source voltage above which weak-avalanche occurs.

71

sla3=1e-6 m

Coefficient of the length dependence of a3.

72

swa3=10e-6 m

Coefficient of the width dependence of a3.

Charge parameters

73

tox=20e-9 m

Thickness of the oxide layer.

74

col=50e-12 F/m

Gate overlap capacitance per unit channel width.

Noise parameters

75

ntr=21e-21 J

Coefficient of the thermal noise.

76

nfr=16e-12 V2

Coefficient of the flicker noise.

Temperature parameters

77

tr (C)

Reference temperature. Default set by option tnom.

78

tref (C)

Alias of tr. Default set by option tnom.

79

tnom (C)

Alias of tr. Default set by option tnom.

80

dta=0 K

Temperature offset of the device.

81

trise=0 K

Alias of dta.

Output Parameters

1

le (m)

Effective channel length.

2

we (m)

Effective channel width.

3

vto (V)

Threshold voltage at zero back-bias.

4

ko (√V )

Low-backbias body factor.

5

k (√V )

High-backbias body factor.

6

phib (V)

Surface potential at strong inversion.

7

vsbx (V)

Transition voltage for the dual-k-factor model.

8

bet (A/V2)

Gain factor (* mult).

9

the1 (1/V)

Coefficient of the mobility reduction due to the gate-induced field.

10

the2 (1/√V )

Coefficient of the mobility reduction due to the back-bias.

11

the3 (1/V)

Coefficient of the mobility reduction due to the lateral field.

12

gam1 (V^(1-etads))

Coefficient for the drain induced threshold shift for large gate drive.

13

etads

Exponent of the vds dependence of gam1.

14

alp

Factor of the channel-length modulation.

15

vp (V)

Characteristic voltage of the channel-length modulation.

16

gamoo

Coefficient for the drain induced threshold shift at zero gate drive.

17

etagam

Exponent of the back-bias dependence of gamo.

18

mo

Factor for the subthreshold slope.

19

etam

Exponent of the back-bias dependence of m.

20

phit (V)

Thermal voltage.

21

zet1

Weak-inversion correction factor.

22

vsbt (V)

Limiting voltage of the vsb dependence of m and gamo.

23

a1

Factor of the weak-avalanche current.

24

a2 (V)

Exponent of the weak-avalanche current.

25

a3

Factor of the drain-source voltage above which weak-avalanche occurs.

26

cox (F)

Gate-to-channel capacitance (* mult).

27

cgdo (F)

Gate-drain overlap capacitance (* mult).

28

cgso (F)

Gate-source overlap capacitance (* mult).

29

nt (J)

Coefficient of the thermal noise.

30

nf (V2)

Coefficient of the flicker noise (/ mult).

31

lv2 (m)

32

lv1 (m)

33

lv51 (m)

34

lv50 (V)

Operating-Point Parameters

1

ide (A)

Resistive drain current.

2

ige (A)

Resistive gate current.

3

ise (A)

Resistive source current.

4

ibe (A)

Resistive bulk current.

5

vds (V)

Drain-source voltage.

6

vgs (V)

Gate-source voltage.

7

vsb (V)

Source-bulk voltage.

8

ids (A)

Resistive drain-source current.

9

idb (A)

Resistive drain-bulk current.

10

isb (A)

Resistive source-bulk current.

11

iavl (A)

Substrate current.

12

pwr (W)

Power.

13

vt1 (V)

Vto including backbias effects.

14

vgt2 (V)

Effective gate drive including backbias and drain effects.

15

vdss1 (V)

Saturation voltage at actual bias.

16

vsat (V)

Saturation limit.

17

gm (S)

Transconductance (d ids / d vgs).

18

gmb (S)

Bulk transconductance (d ids / d vbs).

19

gds (S)

Output conductance (d ids / d vds).

20

cdd (F)

Capacitance (d qd / d vd).

21

cdg (F)

Capacitance (- d qd / d vg).

22

cds (F)

Capacitance (- d qd / d vs).

23

cdb (F)

Capacitance (- d qd / d vb).

24

cgd (F)

Capacitance (- d qg / d vd).

25

cgg (F)

Capacitance (d qg / d vg).

26

cgs (F)

Capacitance (- d qg / d vs).

27

cgb (F)

Capacitance (- d qg / d vb).

28

csd (F)

Capacitance (- d qs / d vd).

29

csg (F)

Capacitance (- d qs / d vg).

30

css (F)

Capacitance (d qs / d vs).

31

csb (F)

Capacitance (- d qs / d vb).

32

cbd (F)

Capacitance (- d qb / d vd).

33

cbg (F)

Capacitance (- d qb / d vg).

34

cbs (F)

Capacitance (- d qb / d vs).

35

cbb (F)

Capacitance (d qb / d vb).

36

u

Transistor gain (gm/gds).

37

rout ()

Small signal output resistance (1/gds).

38

vearly (V)

Equivalent Early voltage (|id|/gds).

39

keff (√V )

Describes body effect at actual bias.

40

beff (S/V)

Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).

41

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

42

sqrtsfw (V/√Hz )

Input-referred RMS white noise voltage (sqrt(sth)/gm).

43

sqrtsff (V/√Hz )

Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).

44

fknee (Hz)

Cross-over frequency above which white noise is dominant.

45

lv9 (V)

46

lv10 (V)

47

lv26 (V)

48

lx4 (A)

49

lx50 (A)

50

lx12 (Coul)

51

lx14 (Coul)

52

lx16 (Coul)

53

linearity_factor

54

I1 (A)

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

I1      OP-54
fthe1      M-31
nf      O-30
swko      M-16
a1      O-23
fug      OP-41
nfr      M-76
swthe1      M-30
a1r      M-63
gam1      O-12
nt      O-29
swthe2      M-36
a2      O-24
gam1r      M-42
ntr      M-75
swthe3      M-41
a2r      M-67
gamoo      O-16
phib      O-6
swvsbx      M-23
a3      O-25
gamoor      M-51
phibr      M-20
swvto      M-13
a3r      M-70
gds      OP-19
phit      O-20
the1      O-9
alp      O-14
gm      OP-17
pwr      OP-12
the1r      M-26
alpr      M-46
gmb      OP-18
region      I-5
the2      O-10
area      I-4
iavl      OP-11
rout      OP-37
the2r      M-32
beff      OP-40
ibe      OP-4
sl2vto      M-12
the3      O-11
bet      O-8
idb      OP-9
sla1      M-65
the3r      M-37
betsq      M-24
ide      OP-1
sla2      M-68
tnom      M-79
cbb      OP-35
ids      OP-8
sla3      M-71
tox      M-73
cbd      OP-32
ige      OP-2
slalp      M-48
tr      M-77
cbg      OP-33
isb      OP-10
slgam1      M-43
tref      M-78
cbs      OP-34
ise      OP-3
slgamoo      M-52
trise      I-7
cdb      OP-23
k      O-5
slk      M-18
trise      M-81
cdd      OP-20
keff      OP-39
slko      M-15
type      M-1
cdg      OP-21
ko      O-4
slmo      M-56
u      OP-36
cds      OP-22
kor      M-14
slthe1r      M-28
vds      OP-5
cgb      OP-27
kr      M-17
slthe2r      M-34
vdss1      OP-15
cgd      OP-24
l      I-2
slthe3r      M-39
vearly      OP-38
cgdo      O-27
lap      M-5
slvsbt      M-62
vgs      OP-6
cgg      OP-25
le      O-1
slvsbx      M-22
vgt2      OP-14
cgs      OP-26
ler      M-2
slvto      M-11
vp      O-15
cgso      O-28
linearity_factor      OP-53
slzet1      M-60
vpr      M-50
col      M-74
lv1      O-32
sqrtsff      OP-43
vsat      OP-16
cox      O-26
lv10      OP-46
sqrtsfw      OP-42
vsb      OP-7
csb      OP-31
lv2      O-31
sta1      M-64
vsbt      O-22
csd      OP-28
lv26      OP-47
stlthe1      M-29
vsbtr      M-61
csg      OP-29
lv50      O-34
stlthe2      M-35
vsbx      O-7
css      OP-30
lv51      O-33
stlthe3      M-40
vsbxr      M-21
dta      M-80
lv9      OP-45
stmo      M-55
vt1      OP-13
etaalp      M-47
lvar      M-4
stthe1r      M-27
vto      O-3
etabet      M-25
lx12      OP-50
stthe2r      M-33
vtor      M-9
etads      O-13
lx14      OP-51
stthe3r      M-38
w      I-1
etadsr      M-45
lx16      OP-52
stvto      M-10
wdog      M-8
etagam      O-17
lx4      OP-48
swa1      M-66
we      O-2
etagamr      M-53
lx50      OP-49
swa2      M-69
wer      M-3
etam      O-19
m      I-6
swa3      M-72
wot      M-7
etamr      M-57
mo      O-18
swalp      M-49
wvar      M-6
etazet      M-59
mor      M-54
swgam1      M-44
zet1      O-21
fknee      OP-44
mult      I-3
swk      M-19
zet1r      M-58

Compact MOS-Transistor Model (mos903)

The mos903 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Jun.98) as MOS model, level 903. Information on how to obtain this document can be found on Source Link by searching for Philips.

(c) Philips Electronics N.V. 1993, 1998

In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

m_1 (1 2 0 0) mos9nch w=0.35e-6 l=0.35e-6

Sample Model Statement

model mos9nch mos903 ler=3.5e-7 wer=1e-5 lvar=0 lap=2.2e-8 wvar=0 wot=3e-8 vtor=0.76 the1r=0.67 stthe1r=-1.76e-3 etaalp=0 slalp=0 alpr=0.01 

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=1.5e-06 m

Drawn channel length in the lay-out. Scale set by option scale.

3

w=2e-05 m

Drawn channel width in the lay-out. Scale set by option scale.

4

printscaled=0

Print scaled parameter info if value not equal to zero.

5

trise=0 K

Difference between the local ambient and global ambient temperature.

6

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

7

m=1

alias of mult.

Model Definition

model modelName mos903 parameter=value ...

Model Parameters

1

level=903

MOS Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage

5

vbdblow=0 V

Low limit of drain-bulk voltage.

6

vbdbhigh=0 V

High limit of drain-bulk voltage

7

vbsblow=0 V

Low limit of source-bulk voltage.

8

vbsbhigh=0 V

High limit of source-bulk voltage.

9

vballmsg=1

All ovcheck messages if set to 1.

10

tmin=0 s

Ovcheck tmin value.

11

tdelay=0 s

Ovcheck tdelay value.

12

stop=0

Stop simulation on overvoltage when STOP==1.

13

ler=1.1e-06(n)/1.25e-06(p) m

Effective channel length of the reference transistor.

14

wer=2e-05 m

Effective channel width of the reference transistor.

15

lvar=-2.2e-07(n)/-4.6e-07(p) m

Difference between the actual and the programmed poly-silicon gate length.

16

lap=1e-07(n)/2.5e-08(p) m

Effective channel length reduction per side.

17

wvar=-2.5e-08(n)/-1.3e-07(p) m

Difference between the actual and the programmed field-oxide opening.

18

wot=0 m

Effective channel width reduction per side.

19

tr=21 unitCELSIUS

Reference temperature. Default set by option tnom.

20

vtor=0.73(n)/1.1(p) V

Threshold voltage at zero back-bias.

21

stvto=-0.0012(n)/-0.0017(p) V/K

Coefficient of the temperature dependence of vto.

22

slvto=-1.35e-07(n)/3.5e-08(p) V m

Coefficient of the length dependence of vto.

23

sl2vto=0 V m2

Second coefficient of the length dependence of vto.

24

sl3vto=0 V

Third coefficient of the length dependence of vto.

25

swvto=1.3e-07(n)/5e-08(p) V m

Coefficient of the width dependence of vto.

26

kor=0.65(n)/0.47(p) V

Low-backbias body factor.

27

slko=-1.3e-07(n)/-2e-07(p) V  m

Coefficient of the length dependence of ko.

28

sl2ko=0 V1/2m2

Second coefficient of the length dependence of ko.

29

swko=2e-09(n)/1.15e-07(p) V  m

Coefficient of the width dependence of ko.

30

kr=0.11(n)/0.47(p) V

High-backbias body factor.

31

slk=-2.8e-07(n)/-2e-07(p) V  m

Coefficient of the length dependence of k.

32

sl2k=0 V1/2m2

Second coefficient of the length dependence of k.

33

swk=2.75e-07(n)/1.15e-07(p) V  m

Coefficient of the width dependence of k.

34

phibr=0.65 V

Surface potential at strong inversion.

35

vsbxr=0.66(n)/1e-12(p) V

Transition voltage for the dual-k-factor model.

36

slvsbx=0 V m

Coefficient of the length dependence of vsbx.

37

swvsbx=-6.75e-07(n)/0(p) V m

Coefficient of the width dependence of vsbx.

38

betsq=8.3e-05(n)/2.61e-05(p) A/V2

Gain factor for an infinite square transistor.

39

etabet=1.6

Exponent of the temperature dependence of the gain factor.

40

lp1=1e-06 m

Characteristic length of first profile.

41

fbet1=0

Relative mobility decrease due to first profile.

42

lp2=1e-08 m

Characteristic length of second profile.

43

fbet2=0

Relative mobility decrease due to second profile.

44

the1r=0.19 1/V

Coefficient of the mobility reduction due to the gate-induced field.

45

stthe1r=0 1/(V K)

Coefficient of the temperature dependence of the1.

46

slthe1r=1.4e-07(n)/7e-08(p) m/V

Coefficient of the length dependence of the1.

47

stlthe1=0 m/(V K)

Coefficient of the temperature dependence of slthe1.

48

gthe1=0

Parameter that selects either the old (gthe1=0) or the new (gthe1=1) scaling rule of the1.

49

swthe1=-5.8e-08(n)/-8e-08(p) m/V

Coefficient of the width dependence of the1.

50

wdog=0 m

Characteristic drawn gate width, below which dogboning appears.

51

fthe1=0

Coefficient describing the width dependence of the1 for w < wdog.

52

the2r=0.012(n)/0.165(p) 1/V

Coefficient of the mobility reduction due to the back-bias.

53

stthe2r=0 1/(V  K)

Coefficient of the temperature dependence of the2.

54

slthe2r=-3.3e-08(n)/-7.5e-08(p) m/V

Coefficient of the length dependence of the2.

55

stlthe2=0 m/(V  K)

Coefficient of the temperature dependence of slthe2.

56

swthe2=3e-08(n)/2e-08(p) m/V

Coefficient of the width dependence of the2.

57

the3r=0.145(n)/0.027(p) 1/V

Coefficient of the mobility reduction due to the lateral field.

58

stthe3r=-0.00066(n)/0(p) 1/(V K)

Coefficient of the temperature dependence of the3.

59

slthe3r=1.85e-07(n)/2.7e-08(p) m/V

Coefficient of the length dependence of the3.

60

stlthe3=-6.2e-10(n)/0(p) m/(V K)

Coefficient of the temperature dependence of slthe3.

61

swthe3=2e-08(n)/1.1e-08(p) m/V

Coefficient of the width dependence of the3.

62

gam1r=0.145(n)/0.077(p) V^(1-etads)

Coefficient for the drain induced threshold shift for large gate drive.

63

slgam1=1.6e-07(n)/1.05e-07(p) V^(1-etads) m

Coefficient of the length dependence of gam1.

64

swgam1=-1e-08(n)/-1.1e-08(p) V^(1-etads) m

Coefficient of the width dependence of gam1.

65

etadsr=0.6

Exponent of the vds dependence of gam1.

66

alpr=0.003(n)/0.044(p)

Factor of the channel-length modulation.

67

etaalp=0.15(n)/0.17(p)

Exponent of the length dependence of alp.

68

slalp=-0.00565(n)/0.009(p) m^etaalp

Coefficient of the length dependence of alp.

69

swalp=1.67e-09(n)/1.8e-10(p) m

Coefficient of the width dependence of alp.

70

vpr=0.34(n)/0.235(p) V

Characteristic voltage of the channel-length modulation.

71

gamoor=0.018(n)/0.007(p)

Coefficient for the drain induced threshold shift at zero gate drive.

72

slgamoo=2e-14(n)/1.1e-14(p) m2

Coefficient of the length dependence of gamoo.

73

sl2gamoo=0

Second coefficient of the length dependence of gamoo.

74

etagamr=2(n)/1(p)

Exponent of the back-bias dependence of gamo.

75

mor=0.5(n)/0.375(p)

Factor for the subthreshold slope.

76

stmo=0 1/K

Coefficient of the temperature dependence of mo.

77

slmo=0.00028(n)/4.7e-05(p) m

Coefficient of the length dependence of mo.

78

etamr=2(n)/1(p)

Exponent of the back-bias dependence of m.

79

zet1r=0.42(n)/1.3(p)

Weak-inversion correction factor.

80

etazet=0.17(n)/0.03(p)

Exponent of the length dependence of zet1.

81

slzet1=-0.39(n)/-2.8(p) m^etazet

Coefficient of the length dependence of zet1.

82

vsbtr=2.1(n)/100(p) V

Limiting voltage of the vsb dependence of m and gamo.

83

slvsbt=-4.4e-06(n)/0(p) V m

Coefficient of the length dependence of vsbt.

84

a1r=6(n)/10(p)

Factor of the weak-avalanche current.

85

sta1=0 1/K

Coefficient of the temperature dependence of a1.

86

sla1=1.3e-06(n)/-1.5e-05(p) m

Coefficient of the length dependence of a1.

87

swa1=3e-06(n)/3e-05(p) m

Coefficient of the width dependence of a1.

88

a2r=38(n)/59(p) V

Exponent of the weak-avalanche current.

89

sla2=1e-06(n)/-8e-06(p) V m

Coefficient of the length dependence of a2.

90

swa2=2e-06(n)/1.5e-05(p) V m

Coefficient of the width dependence of a2.

91

a3r=0.65(n)/0.52(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

92

sla3=-5.5e-07(n)/-4.5e-07(p) m

Coefficient of the length dependence of a3.

93

swa3=0(n)/-1.4e-07(p) m

Coefficient of the width dependence of a3.

94

tox=2.5e-08 m

Thickness of the oxide layer.

95

col=3.2e-10 F/m

Gate overlap capacitance per unit channel width.

96

ntr=2.44e-20(n)/2.11e-20(p) J

Coefficient of the thermal noise.

97

nfmod=0

Switch that selects either old or new flicker noise model.

98

nfr=7e-11(n)/2.14e-11(p) V2

Flicker noise coefficient of the reference transistor (for nfmod=0).

99

nfar=7.15e+22(n)/1.53e+22(p) 1/(V m4)

First coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).

100

nfbr=2.16e+07(n)/4.06e+06(p) 1/(V m2)

Second coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).

101

nfcr=0(n)/2.92e-10(p) 1/V

Third coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).

102

th3mod=1

Flag for theta3 clipping.

103

dta=0 K

Temperature offset of the device.

104

type=n

Transistor gender. Possible values are n and p.

105

tnom (unitCELSIUS)

alias of tnom.

106

tref (unitCELSIUS)

alias of tnom.

107

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ids (A)

Resistive drain-source current.

2

iavl (A)

Substrate current.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Threshold voltage at zero back-bias.

7

vts (V)

VT0 including backbias effects.

8

vgt (V)

Effective gate drive including backbias and drain effects.

9

vdss (V)

Saturation voltage at actual bias.

10

vsat (V)

Saturation limit.

11

gm (S)

Transconductance (d ids / d vgs).

12

gmb (S)

Bulk transconductance (d ids / d vbs).

13

gds (S)

Output conductance (d ids / d vds).

14

cdd (F)

Capacitance (d qd / d vd).

15

cdg (F)

Capacitance (- d qd / d vg).

16

cds (F)

Capacitance (- d qd / d vs).

17

cdb (F)

Capacitance (- d qd / d vb).

18

cgd (F)

Capacitance (- d qg / d vd).

19

cgg (F)

Capacitance (d qg / d vg).

20

cgs (F)

Capacitance (- d qg / d vs).

21

cgb (F)

Capacitance (- d qg / d vb).

22

csd (F)

Capacitance (- d qs / d vd).

23

csg (F)

Capacitance (- d qs / d vg).

24

css (F)

Capacitance (d qs / d vs).

25

csb (F)

Capacitance (- d qs / d vb).

26

cbd (F)

Capacitance (- d qb / d vd).

27

cbg (F)

Capacitance (- d qb / d vg).

28

cbs (F)

Capacitance (- d qb / d vs).

29

cbb (F)

Capacitance (d qb / d vb).

30

cgdol (F)

Drain overlap capacitance of the actual transistor.

31

cgsol (F)

Gate overlap capacitance of the actual transistor.

32

weff (m)

Effective channel width for geometrical models.

33

leff (m)

Effective channel length for geometrical models.

34

u

Transistor gain (gm/gds).

35

rout ()

Small signal output resistance (1/gds).

36

vearly (V)

Equivalent Early voltage (|id|/gds).

37

keff (V )

Describes body effect at actual bias.

38

beff (S/V)

Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

40

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage (sqrt(sth)/gm).

41

sqrtsff (V/Hz )

Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).

42

fknee (Hz)

Cross-over frequency above which white noise is dominant.

43

ctype

Channel type (-1 for PMOS, +1 for NMOS).

44

von (V)

Signed vts (<0 for PMOS, >0 for NMOS).

45

table_ids (A)

Channel current.

46

table_isub (A)

Substrate current.

47

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

48

table_vdsat (V)

Saturation voltage at actual bias.

49

table_qg (Coul)

Charge at g node.

50

table_qd (Coul)

Charge at d node.

51

table_qb (Coul)

Charge at b node.

52

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode,  and subth.

513

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1r M-84 gm OP-11 slk M-31 th3mod M-102
a2r M-88 gmb OP-12 slko M-27 the1r M-44
a3r M-91 gthe1 M-48 slmo M-77 the2r M-52
alpr M-66 iavl OP-2 slthe1r M-46 the3r M-57
beff OP-38 ids OP-1 slthe2r M-54 tmin M-10
betsq M-38 keff OP-37 slthe3r M-59 tnom M-105
cbb OP-29 kor M-26 slvsbt M-83 tox M-94
cbd OP-26 kr M-30 slvsbx M-36 tr M-19
cbg OP-27 l I-2 slvto M-22 tref M-106
cbs OP-28 lap M-16 slzet1 M-81 trise I-5
cdb OP-17 leff OP-33 sqrtsff OP-41 type M-104
cdd OP-14 ler M-13 sqrtsfw OP-40 u OP-34
cdg OP-15 level M-1 sta1 M-85 vballmsg M-9
cds OP-16 lp1 M-40 stlthe1 M-47 vbdbhigh M-6
cgb OP-21 lp2 M-42 stlthe2 M-55 vbdblow M-5
cgd OP-18 lvar M-15 stlthe3 M-60 vbds M-4
cgdol OP-30 m I-7 stmo M-76 vbox M-3
cgg OP-19 meff O-2 stop M-12 vbsbhigh M-8
cgs OP-20 mor M-75 stthe1r M-45 vbsblow M-7
cgsol OP-31 mos_region OP-52 stthe2r M-53 vds OP-3
col M-95 mult I-1 stthe3r M-58 vdss OP-9
compatible M-107 nfar M-99 stvto M-21 vearly OP-36
csb OP-25 nfbr M-100 swa1 M-87 vgs OP-4
csd OP-22 nfcr M-101 swa2 M-90 vgt OP-8
csg OP-23 nfmod M-97 swa3 M-93 von OP-44
css OP-24 nfr M-98 swalp M-69 vpr M-70
ctype OP-43 ntr M-96 swgam1 M-64 vsat OP-10
diode_region OP-53 paramchk M-2 swk M-33 vsb OP-5
dta M-103 phibr M-34 swko M-29 vsbtr M-82
etaalp M-67 printscaled I-4 swthe1 M-49 vsbxr M-35
etabet M-39 region I-6 swthe2 M-56 vto OP-6
etadsr M-65 rout OP-35 swthe3 M-61 vtor M-20
etagamr M-74 sl2gamoo M-73 swvsbx M-37 vts OP-7
etamr M-78 sl2k M-32 swvto M-25 w I-3
etazet M-80 sl2ko M-28 table_ids OP-45 wdog M-50
fbet1 M-41 sl2vto M-23 table_isub OP-46 weff OP-32
fbet2 M-43 sl3vto M-24 table_qb OP-51 wer M-14
fknee OP-42 sla1 M-86 table_qd OP-50 wot M-18
fthe1 M-51 sla2 M-89 table_qg OP-49 wvar M-17
fug OP-39 sla3 M-92 table_vdsat OP-48 zet1r M-79
gam1r M-62 slalp M-68 table_vth OP-47
gamoor M-71 slgam1 M-63 tdelay M-11
gds OP-13 slgamoo M-72 tempeff O-1

Compact MOS-Transistor Distortion Model (mos1000)

The mos10.00 model is an experimental model based on the thesis of Ronald van Langevelde: "A compact MOSFET Model for Distortion Analysis in Analog Circuit Design", Technische Universiteit Eindhoven, 1998.

Note: In noise analysis, mos10.00 instances will not generate any contribution, since there are no noise sources included (yet) in the mos10.00 model.

(c) Philips Electronics N.V. 1999

In extension to the description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1

w=1.0 scale m

Drawn channel width in the layout. Scale set by option scale.

2

l=1.0 scale m

Drawn channel length in the layout. Scale set by option scale.

3

mult=1

Number of devices in parallel.

4

area=1

Alias of mult.

5

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

6

m=1

Multiplicity factor.

7

trise=0 K

Temperature rise from ambient.

Model Definition

model modelName mos1000 parameter=value ...

Model Parameters

Device type parameters

1

type=n

Transistor gender. Possible values are n and p.

Geometry parameters

2

ler=1.0e-6 m

Effective channel length of the reference transistor.

3

wer=1e-6 m

Effective channel width of the reference transistor.

4

lvar=0.0 m

Difference between the actual and the programmed poly-silicon gate length.

5

lap=45.0e-9 m

Effective channel length reduction per side.

6

wvar=-5.0e-9 m

Difference between the actual and the programmed field-oxide opening.

7

wot=50.0e-9 m

Effective channel width reduction per side.

Threshold-voltage parameters

8

vfbr=-518.9e-03 V

Flat-band voltage for reference transistor.

9

stvfb=-1.2e-03 V/K

Coefficient of temperature dependence of vfb.

10

slvfb=24.0e-09 V m

Coefficient of length dependence of vfb.

11

sl2vfb=-1.1e-15 V m2

Second coefficient of length dependence of vfb.

12

swvfb=4.400e-09 V m

Coefficient of the width dependency of vfb.

13

kor=368.0e-03 V

Body effect coefficient for the reference transistor.

14

slko=-8.240e-09 V  m

Coefficient of the length dependence of ko.

15

sl2ko=-2.260e-15 V  m2

Second coefficient of the length dependence of ko.

16

swko=5.86e-09 V  m

Coefficient of the width dependence of ko.

17

phibr=0.6 V

Surface potential at strong inversion.

Channel-current parameters

18

betsq=370.9e-06 A/V2

Gain factor for an infinite square transistor.

19

etabet=1.6

Exponent of the temperature dependence of the gain factor.

20

thesrr=16.10e-3 1/V2

Mobility degradation parameter due to surface roughness scattering.

21

stthesr=0.0 1/(V2 K)

Coefficient of the temperature dependence of thesr.

22

swthesr=0.0 1/(V2 m)

Coefficient of the width dependence of thesr.

23

thephr=0.055 1/V

Mobility degradation parameter due to phonon scattering.

24

sttheph=0.0 1/(V K)

Coefficient of the temperature dependence of theph.

25

swtheph=0.0 1/(V m)

Coefficient of the width dependence of theph.

26

etamobr=1.6

Effective field parameter for dependence on depletion charge.

27

swetamob=0.0 1/m

Coefficient of the width dependence of etamobr.

28

thersq=0.155 1/V

Coefficient of gate voltage independent part of series resistance.

29

swther=0.0 1/(V m)

Coefficient of the width dependence of ther.

30

ther1=0.0 V

Numerator of gate voltage independent part of series resistance.

31

ther2=1.0 V

Denominator of gate voltage independent part of series resistance.

32

thenr=0.480 1/V

Velocity saturation parameter due to optical phonon scattering.

33

stthen=0.0 1/(V K)

Coefficient of the temperature dependence of then.

34

swthen=0.0 1/(V m)

Coefficient of the width dependence of then.

35

thepr=0.0 1/V

Velocity saturation parameter due to acoustic phonon scattering.

36

stthep=0.0 1/(V K)

Coefficient of the temperature dependence of thep.

37

swthep=0.0 1/(V m)

Coefficient of the width dependence of thep.

38

gthep=1.0

Velocity saturation factor due to acoustic phonon scattering.

39

thethr=3.227e-3 1/V3

Coefficient of self-heating.

40

sltheth=2.460e-9 1/(V3 m)

Coefficient of the length dependence of theth.

41

swtheth=0.0 1/(V3 m)

Coefficient of the width dependence of theth.

Sub-threshold parameters

42

sdiblo=2.030e-03 1/V

Drain-induced barrier lowering parameter.

43

sdiblexp=1.340

Exponent of the length dependence of sdibl.

44

dphi=0.800 V

Parameter for short-channel subthreshold behavior.

Saturation parameters

45

ssfsq=6.250e-03 1/V

Static feedback parameter.

46

swssf=0.0 1/(V  m)

Coefficient of the width dependence of ssf.

47

alpsq=0.010 m

Characteristic length parameter for channel length modulation.

48

swalp=0.0 m

Coefficient of the width dependence of alp.

49

vp=0.075 V

Characteristic voltage of channel-length modulation.

Smoothing parameters

50

mexpo=0.093

Smoothing factor.

51

mexpl=0.065

Coefficient of the length dependence of mexp.

Weak-avalanche parameters

52

a1r=6

Factor of the weak-avalanche current.

53

sta1=0.0 1/K

Coefficient of the temperature dependence of a1.

54

sla1=1.30e-6 m

Coefficient of the length dependence of a1.

55

swa1=3.0e-06 m

Coefficient of the width dependence of a1.

56

a2r=38.0 V

Exponent of the weak-avalanche current.

57

sla2=1.00e-06 V m

Coefficient of the length dependence of a2.

58

swa2=2.00e-06 V m

Coefficient of the width dependence of a2.

59

a3r=0.650

Factor of the drain-source voltage above which weak-avalanche occurs.

60

sla3=-550.0e-06 m

Coefficient of the length dependence of a3.

61

swa3=0.0 m

Coefficient of the width dependence of a3.

Charge parameters

62

tox=4.5e-09 m

Thickness of the oxide layer.

63

col=320e-12 F/m

Gate overlap capacitance per unit channel width.

Temperature parameters

64

tr (C)

Reference temperature. Default set by option tnom.

65

tref (C)

Alias of tr. Default set by option tnom.

66

tnom (C)

Alias of tr. Default set by option tnom.

67

dta=0.0 K

Temperature offset of the device. It served as the default value of instance trise.

68

trise=0.0 K

Alias of dta.

Output Parameters

1

le (m)

Effective channel length.

2

we (m)

Effective channel width.

3

vfb (V)

Flat-band voltage.

4

ko (V )

Body effect coefficient.

5

phib (V)

Surface potential at strong inversion.

6

bet (A/V2)

Gain factor.

7

thesr (1/V2)

Mobility degradation parameter due to surface roughness scattering.

8

theph (1/V)

Mobility degradation parameter due to phonon scattering.

9

etamob

Effective field parameter for dependence on depletion charge.

10

ther (1/V)

Coefficient of gate voltage independent part of series resistance.

11

ther1 (V)

Numerator of gate voltage independent part of series resistance.

12

ther2 (V)

Denominator of gate voltage independent part of series resistance.

13

then (1/V)

Velocity saturation parameter due to optical phonon scattering.

14

thep (1/V)

Velocity saturation parameter due to acoustic phonon scattering.

15

gthep

Velocity saturation factor due to acoustic phonon scattering.

16

theth (1/V3)

Coefficient of self-heating.

17

sdibl (1/V )

Drain-induced barrier lowering parameter.

18

dphi (V)

Parameter for short-channel subthreshold behavior.

19

ssf (1/V )

Static feedback parameter.

20

alp (m)

Characteristic length parameter for channel length modulation.

21

vp (V)

Characteristic voltage of channel-length modulation.

22

mexp

Smoothing factor.

23

phit (V)

Thermal voltage.

24

a1

Factor of the weak-avalanche current.

25

a2 (V)

Exponent of the weak-avalanche current.

26

a3

Factor of the drain-source voltage above which weak-avalanche occurs.

27

cox (F)

Gate-to-channel capacitance (* mult).

28

cgdo (F)

Gate-drain overlap capacitance (* mult).

29

cgso (F)

Gate-source overlap capacitance (* mult).

Operating-Point Parameters

1

ide (A)

Resistive drain current.

2

ige (A)

Resistive gate current.

3

ise (A)

Resistive source current.

4

ibe (A)

Resistive bulk current.

5

vds (V)

Drain-source voltage.

6

vgs (V)

Gate-source voltage.

7

vsb (V)

Source-bulk voltage.

8

ids (A)

Resistive drain current.

9

idb (A)

Resistive drain-bulk current.

10

isb (A)

Resistive source-bulk current.

11

iavl (A)

Substrate current.

12

pwr (W)

Power.

13

vto (V)

Threshold voltage at zero back-bias.

14

vts (V)

Vts.

15

vgt (V)

Effective gate drive including backbias and drain effects.

16

vdss (V)

Saturation voltage at actual bias.

17

vsat (V)

Saturation limit.

18

gm (S)

Transconductance (d ids / d vgs).

19

gmb (S)

Bulk transconductance (d ids / d vbs).

20

gds (S)

Output conductance (d ids / d vds).

21

cdd (F)

Capacitance (d qd / d vd).

22

cdg (F)

Capacitance (- d qd / d vg).

23

cds (F)

Capacitance (- d qd / d vs).

24

cdb (F)

Capacitance (- d qd / d vb).

25

cgd (F)

Capacitance (- d qg / d vd).

26

cgg (F)

Capacitance (d qg / d vg).

27

cgs (F)

Capacitance (- d qg / d vs).

28

cgb (F)

Capacitance (- d qg / d vb).

29

csd (F)

Capacitance (- d qs / d vd).

30

csg (F)

Capacitance (- d qs / d vg).

31

css (F)

Capacitance (d qs / d vs).

32

csb (F)

Capacitance (- d qs / d vb).

33

cbd (F)

Capacitance (- d qb / d vd).

34

cbg (F)

Capacitance (- d qb / d vg).

35

cbs (F)

Capacitance (- d qb / d vs).

36

cbb (F)

Capacitance (d qb / d vb).

37

u

Transistor gain (gm/gds).

38

rout ()

Small signal output resistance (1/gds).

39

vearly (V)

Equivalent Early voltage (|id|/gds).

40

keff (V )

Describes body effect at actual bias.

41

beff (S/V)

Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).

42

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1      O-24
etamobr      M-26
sl2ko      M-15
ther1      M-30
a1r      M-52
fug      OP-42
sl2vfb      M-11
ther1      O-11
a2      O-25
gds      OP-20
sla1      M-54
ther2      M-31
a2r      M-56
gm      OP-18
sla2      M-57
ther2      O-12
a3      O-26
gmb      OP-19
sla3      M-60
thersq      M-28
a3r      M-59
gthep      M-38
slko      M-14
thesr      O-7
alp      O-20
gthep      O-15
sltheth      M-40
thesrr      M-20
alpsq      M-47
iavl      OP-11
slvfb      M-10
theth      O-16
area      I-4
ibe      OP-4
ssf      O-19
thethr      M-39
beff      OP-41
idb      OP-9
ssfsq      M-45
tnom      M-66
bet      O-6
ide      OP-1
sta1      M-53
tox      M-62
betsq      M-18
ids      OP-8
stthen      M-33
tr      M-64
cbb      OP-36
ige      OP-2
stthep      M-36
tref      M-65
cbd      OP-33
isb      OP-10
sttheph      M-24
trise      I-7
cbg      OP-34
ise      OP-3
stthesr      M-21
trise      M-68
cbs      OP-35
keff      OP-40
stvfb      M-9
type      M-1
cdb      OP-24
ko      O-4
swa1      M-55
u      OP-37
cdd      OP-21
kor      M-13
swa2      M-58
vds      OP-5
cdg      OP-22
l      I-2
swa3      M-61
vdss      OP-16
cds      OP-23
lap      M-5
swalp      M-48
vearly      OP-39
cgb      OP-28
le      O-1
swetamob      M-27
vfb      O-3
cgd      OP-25
ler      M-2
swko      M-16
vfbr      M-8
cgdo      O-28
lvar      M-4
swssf      M-46
vgs      OP-6
cgg      OP-26
m      I-6
swthen      M-34
vgt      OP-15
cgs      OP-27
mexp      O-22
swthep      M-37
vp      M-49
cgso      O-29
mexpl      M-51
swtheph      M-25
vp      O-21
col      M-63
mexpo      M-50
swther      M-29
vsat      OP-17
cox      O-27
mult      I-3
swthesr      M-22
vsb      OP-7
csb      OP-32
phib      O-5
swtheth      M-41
vto      OP-13
csd      OP-29
phibr      M-17
swvfb      M-12
vts      OP-14
csg      OP-30
phit      O-23
then      O-13
w      I-1
css      OP-31
pwr      OP-12
thenr      M-32
we      O-2
dphi      M-44
region      I-5
thep      O-14
wer      M-3
dphi      O-18
rout      OP-38
theph      O-8
wot      M-7
dta      M-67
sdibl      O-17
thephr      M-23
wvar      M-6
etabet      M-19
sdiblexp      M-43
thepr      M-35
etamob      O-9
sdiblo      M-42
ther      O-10

Compact MOS-Transistor Distortion Model (mos1100)

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

printscaled=0

Print scaled parameter info if value not equal to zero.

5

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

6

m=1

alias of mult.

7

mos_region=SUBTHRESHOLD

8

diode_region=ON

9

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos1100 parameter=value ...

Model Parameters

1

level=1.1e+03

MOS Level.

2

paramchk=0

Level of clip warning info.

3

ler=1e-06 m

Effective channel length of the reference transistor.

4

wer=1e-05 m

Effective channel width of the reference transistor.

5

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

6

lap=4e-08 m

Effective channel length reduction per side.

7

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

8

wot=0 m

Effective channel width reduction per side.

9

tr=21 C

Reference temperature. Default set by option tnom.

10

vfbr=-1.05 V

Flat-band voltage for reference transistor.

11

stvfb=0.0005 V/K

Coefficient of temperature dependence of vfb.

12

kor=0.5 V

Body effect coefficient for the reference transistor.

13

slko=0 V  m

Coefficient of the length dependence of ko.

14

sl2ko=0 V  m2

Second coefficient of the length dependence of ko.

15

swko=0 V  m

Coefficient of the width dependence of ko.

16

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

17

phibr=0.95 V

Surface potential at strong inversion.

18

slphib=0 Vm

Coefficient of the length dependence of phib.

19

sl2phib=0 Vm2

Second coefficient of the length dependence of phib.

20

swphib=0 Vm

Coefficient of the width dependence of phib.

21

betsq=0.000371(n)/0.000115(p) A/V2

Gain factor for an infinite square transistor.

22

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

23

fbet1=0

Relative mobility decrease due to first lateral profile.

24

lp1=8e-07 m

Characteristic length of first lateral profile.

25

fbet2=0

Relative mobility decrease due to second lateral profile.

26

lp2=8e-07 m

Characteristic length of second lateral profile.

27

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

28

swthesr=0 m

Coefficient of the width dependence of thesr.

29

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

30

etaph=1.75

Exponent of the temperature dependence of theph.

31

swtheph=0 m

Coefficient of the width dependence of theph.

32

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

33

stetamob=0 1/K

Coefficient of the temperature dependence of etamob.

34

swetamob=0 m

Coefficient of the width dependence of etamob.

35

nur=1

Exponent of the field dependence of the mobility model minus 1.

36

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter nu.

37

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

38

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of ther.

39

swther=0 m

Coefficient of the width dependence of ther.

40

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

41

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

42

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

43

slthesat=1

Coefficient of length dependence of thesat.

44

thesatexp=1

Exponent of length dependence of thesat.

45

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of thesat.

46

swthesat=0 m

Coefficient of the width dependence of thesat.

47

thethr=0.001(n)/0.0005(p) 1/V3

Coefficient of self-heating.

48

thethexp=1

Exponent of the length dependence of theth.

49

swtheth=0 m

Coefficient of the width dependence of theth.

50

sdiblo=0.002(n)/0.001(p) 1/V

Drain-induced barrier lowering parameter.

51

sdiblexp=1.35

Exponent of the length dependence of sdibl.

52

mor=0

Parameter for short-channel subthreshold slope.

53

moexp=1.34

Exponent of the length dependence of mo.

54

ssfr=0.00625 1/V

Static feedback parameter.

55

slssf=1e-06 m

Coefficient of the length dependence of ssf.

56

swssf=0 m

Coefficient of the width dependence of ssf.

57

alpr=0.01

Factor of the channel length modulation.

58

slalp=1

Coefficient of the length dependence of alp.

59

alpexp=1

Exponent of the length dependence of alp.

60

swalp=0 m

Coefficient of the width dependence of alp.

61

vp=0.05 V

Characteristic voltage of channel-length modulation.

62

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

63

a1r=6

Factor of the weak-avalanche current.

64

sta1=0 1/K

Coefficient of the temperature dependence of a1.

65

sla1=0 m

Coefficient of the length dependence of a1.

66

swa1=0 m

Coefficient of the width dependence of a1.

67

a2r=38 V

Exponent of the weak-avalanche current.

68

sla2=0 V m

Coefficient of the length dependence of a2.

69

swa2=0 V m

Coefficient of the width dependence of a2.

70

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

71

sla3=0 m

Coefficient of the length dependence of a3.

72

swa3=0 m

Coefficient of the width dependence of a3.

73

iginvr=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

74

binv=48(n)/87.5(p) A/V2

Probability factor for intrinsic gate tunneling current in inversion.

75

igaccr=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

76

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

77

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

78

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

79

igovr=0 A/V2

Gain factor for Source/Drain overlap gate tunneling current.

80

tox=3.2e-09 m

Thickness of gate oxide layer.

81

col=3.2e-10 F/m

Gate overlap capacitance per unit channel width.

82

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

83

ntr=1.66e-20 J

Coefficient of the thermal noise.

84

nfar=1.57e+22(n)/3.83e+23(p) 1/(Vm4)

First coefficient of the flicker noise.

85

nfbr=4.75e+08(n)/1.02e+08(p) 1/(Vm2)

Second coefficient of the flicker noise.

86

nfcr=0(n)/7.3e-09(p) 1/V

Third coefficient of the flicker noise.

87

dta=0 K

Temperature offset of the device.

88

type=n

Transistor gender. Possible values are n and p.

89

imax=1000 A

Explosion current.

90

vbox=0.0 V

Oxide breakdown voltage.

91

vbds=0.0 V

Drain-source breakdown voltage.

92

tnom (C)

alias of tnom.

93

tref (C)

alias of tnom.

94

simkitver=3.4

Output Parameters

1

vfb (V)

Flat-band voltage for the actual transistor.

2

ko (V )

Body-effect factor.

3

kpinv (1/V )

Inverse of body-effect factor of the poly-silicon gate.

4

phib (V)

Surface potential at the onset of strong inversion.

5

bet (A/V2)

Gain factor.

6

thesr (1/V)

Mobility degradation parameter due to surface roughness scattering.

7

theph (1/V)

Mobility degradation parameter due to phonon scattering.

8

etamob

Effective field parameter for dependence on depletion charge.

9

nu

Exponent of field dependence of mobility model.

10

ther (1/V)

Coefficient of series resistance.

11

ther1 (V)

Numerator of gate voltage dependent part of series resistance.

12

ther2 (V)

Denominator of gate voltage dependent part of series resistance.

13

thesat (1/V)

Velocity saturation parameter due to optical/acoustic phonon scattering.

14

theth (1/V3)

Coefficient of self-heating.

15

sdibl (1/V )

Drain-induced barrier lowering parameter.

16

mo (V)

Parameter for (short-channel) subthreshold slope.

17

ssf (1/V )

Static-feedback parameter.

18

alp

Factor of channel length modulation.

19

vp (V)

Characteristic voltage of channel-length modulation.

20

mexp

Smoothing factor.

21

phit (V)

Thermal voltage at the actual temperature.

22

a1

Factor of the weak-avalanche current.

23

a2 (V)

Exponent of the weak-avalanche current.

24

a3

Factor of the drain-source voltage above which weak-avalanche occurs.

25

iginv (A/V2)

Gain factor for intrinsic gate tunneling current in inversion.

26

binv (A/V2)

Probability factor for intrinsic gate tunneling current in inversion.

27

igacc (A/V2)

Gain factor for intrinsic gate tunneling current in accumulation.

28

bacc (V)

Probability factor for intrinsic gate tunneling current in accumulation.

29

vfbov (V)

Flat-band voltage for the Source/Drain overlap extensions.

30

kov (V )

Body-effect factor for the Source/Drain overlap extensions.

31

igov (A/V2)

Gain factor for Source/Drain overlap tunneling current.

32

cox (F)

Oxide capacitance for the intrinsic channel (* mult).

33

cgdo (F)

Oxide capacitance for the gate-drain overlap (* mult).

34

cgso (F)

Oxide capacitance for the gate-source overlap (* mult).

35

gatenoise

Flag for in/exclusion of induced gate thermal noise.

36

nt (J)

Thermal noise coefficient.

37

nfa (1/(Vm4))

First coefficient of the flicker noise.

38

nfb (1/(Vm2))

Second coefficient of the flicker noise.

39

nfc (1/V)

Third coefficient of the flicker noise.

40

tox (m)

Thickness of gate oxide layer.

41

int_s

42

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

u

Transistor gain (gm/gds).

39

rout ()

Small-signal output resistance (1/gds).

40

vearly (V)

Equivalent Early voltage (|id|/gds).

41

keff (V )

Body effect parameter.

42

beff (A/V2)

Gain factor.

43

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

44

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

45

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

46

fknee (Hz)

Cross-over frequency above which white noise is dominant.

47

table_ids (A)

Current.

48

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

49

table_qg (Coul)

Charge at g node.

50

table_qd (Coul)

Charge at d node.

51

table_qb (Coul)

Charge at b node.

52

mos_region=SUBTHRESHOLD

53

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1      O-22
fug      OP-43
nt      O-36
table_vth      OP-48
a1r      M-63
gatenoise      M-82
ntr      M-83
theph      O-7
a2      O-23
gatenoise      O-35
nu      O-9
thephr      M-29
a2r      M-67
gds      OP-17
nuexp      M-36
ther      O-10
a3      O-24
gm      OP-15
nur      M-35
ther1      M-40
a3r      M-70
gmb      OP-16
paramchk      M-2
ther1      O-11
alp      O-18
iavl      OP-2
phib      O-4
ther2      M-41
alpexp      M-59
ids      OP-1
phibr      M-17
ther2      O-12
alpr      M-57
igacc      O-27
phit      O-21
therr      M-37
bacc      M-76
igaccr      M-75
printscaled      I-4
thesat      O-13
bacc      O-28
igb      OP-5
region      I-5
thesatexp      M-44
beff      OP-42
igd      OP-4
rout      OP-39
thesatr      M-42
bet      O-5
iginv      O-25
sdibl      O-15
thesr      O-6
betsq      M-21
iginvr      M-73
sdiblexp      M-51
thesrr      M-27
binv      M-74
igov      O-31
sdiblo      M-50
theth      O-14
binv      O-26
igovr      M-79
simkitver      M-94
thethexp      M-48
cbb      OP-33
igs      OP-3
sl2ko      M-14
thethr      M-47
cbd      OP-30
imax      M-89
sl2phib      M-19
tnom      M-92
cbg      OP-31
int_d      O-42
sla1      M-65
tox      M-80
cbs      OP-32
int_s      O-41
sla2      M-68
tox      O-40
cdb      OP-21
keff      OP-41
sla3      M-71
tr      M-9
cdd      OP-18
ko      O-2
slalp      M-58
tref      M-93
cdg      OP-19
kor      M-12
slko      M-13
trise      I-9
cds      OP-20
kov      M-78
slphib      M-18
type      M-88
cgb      OP-25
kov      O-30
slssf      M-55
u      OP-38
cgd      OP-22
kpinv      M-16
slthesat      M-43
vbds      M-91
cgdo      O-33
kpinv      O-3
sqrtsff      OP-45
vbox      M-90
cgdol      OP-34
l      I-2
sqrtsfw      OP-44
vds      OP-6
cgg      OP-23
lap      M-6
ssf      O-17
vdss      OP-13
cgs      OP-24
leff      OP-37
ssfr      M-54
vearly      OP-40
cgso      O-34
ler      M-3
sta1      M-64
vfb      O-1
cgsol      OP-35
level      M-1
stetamob      M-33
vfbov      M-77
col      M-81
lmin      M-62
stvfb      M-11
vfbov      O-29
cox      O-32
lp1      M-24
swa1      M-66
vfbr      M-10
csb      OP-29
lp2      M-26
swa2      M-69
vgs      OP-7
csd      OP-26
lvar      M-5
swa3      M-72
vgt      OP-12
csg      OP-27
m      I-6
swalp      M-60
vp      M-61
css      OP-28
mexp      O-20
swetamob      M-34
vp      O-19
diode_region      I-8
mo      O-16
swko      M-15
vsat      OP-14
diode_region      OP-53
moexp      M-53
swphib      M-20
vsb      OP-8
dta      M-87
mor      M-52
swssf      M-56
vth      OP-11
etabet      M-22
mos_region      I-7
swtheph      M-31
vto      OP-9
etamob      O-8
mos_region      OP-52
swther      M-39
vts      OP-10
etamobr      M-32
mult      I-1
swthesat      M-46
w      I-3
etaph      M-30
nfa      O-37
swthesr      M-28
weff      OP-36
etar      M-38
nfar      M-84
swtheth      M-49
wer      M-4
etasat      M-45
nfb      O-38
table_ids      OP-47
wot      M-8
fbet1      M-23
nfbr      M-85
table_qb      OP-51
wvar      M-7
fbet2      M-25
nfc      O-39
table_qd      OP-50
fknee      OP-46
nfcr      M-86
table_qg      OP-49

Compact MOS-Transistor Distortion Model (mos1100e)

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

4

m=1

Alias of mult.

5

mos_region=SUBTHRESHOLD

6

diode_region=ON

7

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos1100e parameter=value ...

Model Parameters

1

level=1.1e+03

MOS Level.

2

paramchk=0

Level of clip warning info.

3

vfb=-1.05 V

Flat-band voltage for the actual transistor.

4

ko=0.5 V

Body-effect factor.

5

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

6

phib=0.95 V

Surface potential at the onset of strong inversion.

7

bet=0.00192(n)/0.000381(p) A/V2

Gain factor.

8

thesr=0.356(n)/0.73(p) 1/V

Mobility degradation parameter due to surface roughness scattering.

9

theph=0.0129(n)/0.001(p) 1/V

Mobility degradation parameter due to phonon scattering.

10

etamob=1.4(n)/3(p)

Effective field parameter for dependence on depletion charge.

11

nu=2

Exponent of field dependence of mobility model.

12

ther=0.0812(n)/0.079(p) 1/V

Coefficient of series resistance.

13

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

14

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

15

thesat=0.251(n)/0.173(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

16

theth=1e-05(n)/0(p) 1/V3

Coefficient of self-heating.

17

sdibl=0.000853(n)/3.55e-05(p) 1/V

Drain-induced barrier lowering parameter.

18

mo=0 V

Parameter for (short-channel) subthreshold slope.

19

ssf=0.012(n)/0.01(p) 1/V

Static-feedback parameter.

20

alp=0.025

Factor of channel length modulation.

21

vp=0.05 V

Characteristic voltage of channel-length modulation.

22

mexp=5

Smoothing factor.

23

phit=0.0266 V

Thermal voltage at the actual temperature.

24

a1=6.02(n)/6.86(p)

Factor of the weak-avalanche current.

25

a2=38(n)/57.3(p) V

Exponent of the weak-avalanche current.

26

a3=0.641(n)/0.425(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

27

iginv=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

28

binv=48(n)/87.5(p) A/V2

Probability factor for intrinsic gate tunneling current in inversion.

29

igacc=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

30

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

31

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

32

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

33

igov=0 A/V2

Gain factor for Source/Drain overlap tunneling current.

34

cox=2.98e-14(n)/2.72e-14(p) F

Oxide capacitance for the intrinsic channel (* mult).

35

cgdo=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-drain overlap (* mult).

36

cgso=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-source overlap (* mult).

37

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

38

nt=1.66e-20 J

Thermal noise coefficient.

39

nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)

First coefficient of the flicker noise.

40

nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)

Second coefficient of the flicker noise.

41

nfc=0(n)/3.63e-10(p) 1/V

Third coefficient of the flicker noise.

42

tox=3.2e-09 m

Thickness of gate oxide layer.

43

type=n

Transistor gender. Possible values are n and p.

44

imax=1000 A

Explosion current.

45

vbox=0.0 V

Oxide breakdown voltage.

46

vbds=0.0 V

Drain-source breakdown voltage.

47

simkitver=3.4

Output Parameters

1

vfb (V)

Flat-band voltage for the actual transistor.

2

ko (V )

Body-effect factor.

3

kpinv (1/V )

Inverse of body-effect factor of the poly-silicon gate.

4

phib (V)

Surface potential at the onset of strong inversion.

5

bet (A/V2)

Gain factor.

6

thesr (1/V)

Mobility degradation parameter due to surface roughness scattering.

7

theph (1/V)

Mobility degradation parameter due to phonon scattering.

8

etamob

Effective field parameter for dependence on depletion charge.

9

nu

Exponent of field dependence of mobility model.

10

ther (1/V)

Coefficient of series resistance.

11

ther1 (V)

Numerator of gate voltage dependent part of series resistance.

12

ther2 (V)

Denominator of gate voltage dependent part of series resistance.

13

thesat (1/V)

Velocity saturation parameter due to optical/acoustic phonon scattering.

14

theth (1/V3)

Coefficient of self-heating.

15

sdibl (1/V )

Drain-induced barrier lowering parameter.

16

mo (V)

Parameter for (short-channel) subthreshold slope.

17

ssf (1/V )

Static-feedback parameter.

18

alp

Factor of channel length modulation.

19

vp (V)

Characteristic voltage of channel-length modulation.

20

mexp

Smoothing factor.

21

phit (V)

Thermal voltage at the actual temperature.

22

a1

Factor of the weak-avalanche current.

23

a2 (V)

Exponent of the weak-avalanche current.

24

a3

Factor of the drain-source voltage above which weak-avalanche occurs.

25

iginv (A/V2)

Gain factor for intrinsic gate tunneling current in inversion.

26

binv (A/V2)

Probability factor for intrinsic gate tunneling current in inversion.

27

igacc (A/V2)

Gain factor for intrinsic gate tunneling current in accumulation.

28

bacc (V)

Probability factor for intrinsic gate tunneling current in accumulation.

29

vfbov (V)

Flat-band voltage for the Source/Drain overlap extensions.

30

kov (V )

Body-effect factor for the Source/Drain overlap extensions.

31

igov (A/V2)

Gain factor for Source/Drain overlap tunneling current.

32

cox (F)

Oxide capacitance for the intrinsic channel (* mult).

33

cgdo (F)

Oxide capacitance for the gate-drain overlap (* mult).

34

cgso (F)

Oxide capacitance for the gate-source overlap (* mult).

35

gatenoise

Flag for in/exclusion of induced gate thermal noise.

36

nt (J)

Thermal noise coefficient.

37

nfa (1/(Vm4))

First coefficient of the flicker noise.

38

nfb (1/(Vm2))

Second coefficient of the flicker noise.

39

nfc (1/V)

Third coefficient of the flicker noise.

40

tox (m)

Thickness of gate oxide layer.

41

int_s

42

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

u

Transistor gain (gm/gds).

37

rout ()

Small-signal output resistance (1/gds).

38

vearly (V)

Equivalent Early voltage (|id|/gds).

39

keff (V )

Body effect parameter.

40

beff (A/V2)

Gain factor.

41

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

42

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

43

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

44

fknee (Hz)

Cross-over frequency above which white noise is dominant.

45

table_ids (A)

Current.

46

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

47

table_qg (Coul)

Charge at g node.

48

table_qd (Coul)

Charge at d node.

49

table_qb (Coul)

Charge at b node.

50

mos_region=SUBTHRESHOLD

51

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1      M-24
csg      OP-27
mexp      O-20
theph      O-7
a1      O-22
css      OP-28
mo      M-18
ther      M-12
a2      M-25
diode_region      I-6
mo      O-16
ther      O-10
a2      O-23
diode_region      OP-51
mos_region      I-5
ther1      M-13
a3      M-26
etamob      M-10
mos_region      OP-50
ther1      O-11
a3      O-24
etamob      O-8
mult      I-1
ther2      M-14
alp      M-20
fknee      OP-44
nfa      M-39
ther2      O-12
alp      O-18
fug      OP-41
nfa      O-37
thesat      M-15
bacc      M-30
gatenoise      M-37
nfb      M-40
thesat      O-13
bacc      O-28
gatenoise      O-35
nfb      O-38
thesr      M-8
beff      OP-40
gds      OP-17
nfc      M-41
thesr      O-6
bet      M-7
gm      OP-15
nfc      O-39
theth      M-16
bet      O-5
gmb      OP-16
nt      M-38
theth      O-14
binv      M-28
iavl      OP-2
nt      O-36
tox      M-42
binv      O-26
ids      OP-1
nu      M-11
tox      O-40
cbb      OP-33
igacc      M-29
nu      O-9
trise      I-7
cbd      OP-30
igacc      O-27
paramchk      M-2
type      M-43
cbg      OP-31
igb      OP-5
phib      M-6
u      OP-36
cbs      OP-32
igd      OP-4
phib      O-4
vbds      M-46
cdb      OP-21
iginv      M-27
phit      M-23
vbox      M-45
cdd      OP-18
iginv      O-25
phit      O-21
vds      OP-6
cdg      OP-19
igov      M-33
printscaled      I-2
vdss      OP-13
cds      OP-20
igov      O-31
region      I-3
vearly      OP-38
cgb      OP-25
igs      OP-3
rout      OP-37
vfb      M-3
cgd      OP-22
imax      M-44
sdibl      M-17
vfb      O-1
cgdo      M-35
int_d      O-42
sdibl      O-15
vfbov      M-31
cgdo      O-33
int_s      O-41
simkitver      M-47
vfbov      O-29
cgdol      OP-34
keff      OP-39
sqrtsff      OP-43
vgs      OP-7
cgg      OP-23
ko      M-4
sqrtsfw      OP-42
vgt      OP-12
cgs      OP-24
ko      O-2
ssf      M-19
vp      M-21
cgso      M-36
kov      M-32
ssf      O-17
vp      O-19
cgso      O-34
kov      O-30
table_ids      OP-45
vsat      OP-14
cgsol      OP-35
kpinv      M-5
table_qb      OP-49
vsb      OP-8
cox      M-34
kpinv      O-3
table_qd      OP-48
vth      OP-11
cox      O-32
level      M-1
table_qg      OP-47
vto      OP-9
csb      OP-29
m      I-4
table_vth      OP-46
vts      OP-10
csd      OP-26
mexp      M-22
theph      M-9

MOS Model 11, Level 1101 (mos11010)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12  

diode_region=ON

Model Definition

model modelName mos11010 parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

vfb=-1.05 V

Flat-band voltage at reference temperature.

12

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

13

kor=0.5 V

Body effect coefficient for the reference transistor.

14

slko=0

Coefficient of the length dependence of KO.

15

sl2ko=0

Second coefficient of the length dependence of KO.

16

sl3ko=0

Third coefficient of the length dependence of KO.

17

sl3koexp=1

Exponent belonging to the third coefficient of the length dependence of KO.

18

swko=0

Coefficient of the width dependence of KO.

19

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

20

phibr=0.95 V

Surface potential at strong inversion.

21

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

22

slphib=0

Coefficient of the length dependence of PHIB.

23

sl2phib=0

Second coefficient of the length dependence of PHIB.

24

swphib=0

Coefficient of the width dependence of PHIB.

25

betsq=0.000371(n)/0.000115(p) A/V2

Gain factor for an infinite square transistor.

26

etabetr=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

27

sletabet=0

Coefficient of length dependence of ETABETR.

28

fbet1=0

Relative mobility decrease due to first lateral profile.

29

lp1=8e-07 m

Characteristic length of first lateral profile.

30

fbet2=0

Relative mobility decrease due to second lateral profile.

31

lp2=8e-07 m

Characteristic length of second lateral profile.

32

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

33

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

34

swthesr=0

Coefficient of the width dependence of THESR.

35

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

36

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

37

swtheph=0

Coefficient of the width dependence of THEPH.

38

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

39

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

40

swetamob=0

Coefficient of the width dependence of ETAMOB.

41

nu=2

Exponent of field dependence of mobility model.

42

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

43

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

44

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

45

swther=0

Coefficient of the width dependence of THER.

46

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

47

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

48

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

49

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

50

slthesat=1

Coefficient of length dependence of THESAT.

51

thesatexp=1

Exponent of length dependence of THESAT.

52

swthesat=0

Coefficient of the width dependence of THESAT.

53

thethr=0.001(n)/0.0005(p) 1/V3

Coefficient of self-heating.

54

thethexp=1

Exponent of the length dependence of THETH.

55

swtheth=0

Coefficient of the width dependence of THETH.

56

sdiblo=0.0001 1/V

Drain-induced barrier lowering parameter.

57

sdiblexp=1.35

Exponent of the length dependence of SDIBL.

58

moo=0

Parameter for short-channel subthreshold slope.

59

mor=0

Parameter for short-channel subthreshold slope per unit length.

60

moexp=1.34

Exponent of the length dependence of MO.

61

ssfr=0.00625 1/V

Static feedback parameter.

62

slssf=1

Coefficient of the length dependence of SSF.

63

swssf=0

Coefficient of the width dependence of SSF.

64

alpr=0.01

Factor of the channel length modulation.

65

slalp=1

Coefficient of the length dependence of ALP.

66

alpexp=1

Exponent of the length dependence of ALP.

67

swalp=0

Coefficient of the width dependence of ALP.

68

vp=0.05 V

Characteristic voltage of channel-length modulation.

69

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

70

a1r=6

Factor of the weak-avalanche current.

71

sta1=0 1/K

Coefficient of the temperature dependence of A1.

72

sla1=0

Coefficient of the length dependence of A1.

73

swa1=0

Coefficient of the width dependence of A1.

74

a2r=38 V

Exponent of the weak-avalanche current.

75

sla2=0

Coefficient of the length dependence of A2.

76

swa2=0

Coefficient of the width dependence of A2.

77

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

78

sla3=0

Coefficient of the length dependence of A3.

79

swa3=0

Coefficient of the width dependence of A3.

80

iginvr=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

81

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

82

igaccr=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

83

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

84

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

85

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

86

igovr=0 A/V2

Gain factor for Source/Drain overlap gate tunneling current.

87

agidlr=0 A/V3

Gain factor for gate-induced leakage current.

88

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

89

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

90

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

91

tox=3.2e-09 m

Thickness of gate oxide layer.

92

col=3.2e-16 F

Gate overlap capacitance for a channel width of 1 um.

93

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

94

nt=1.62e-20 J

Thermal noise coefficient.

95

nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)

First coefficient of the flicker noise for a channel area of 1 um^2.

96

nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)

Second coefficient of the flicker noise for a channel area of 1 um^2.

97

nfcr=0(n)/7.3e-08(p) 1/V

Third coefficient of the flicker noise for a channel area of 1 um^2.

98

dta=0 K

Temperature offset of the device.

99

rgo=0

Gate resistance.

100

rint=0 m2

Contact resistance between silicide and poly.

101

rvpoly=0 m2

Vertical poly resistance.

102

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

103

dlsil=0 m

Silicide extension over the physical gate length.

104

binning=0

flag for eldo model.

105

type=n

Transistor gender. Possible values are n and p.

106

imax=1000 A

Explosion current.

107

tnom (C)

alias of tnom.

108

tref (C)

alias of tnom.

109

simkitver=3.4

110

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

ctype

Channel type (-1 for PMOS, +1 for NMOS).

49

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

50

table_ids (A)

Current.

51

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

52

table_qg (Coul)

Charge at g node.

53

table_qd (Coul)

Charge at d node.

54

table_qb (Coul)

Charge at b node.

55

mos_region=SUBTHRESHOLD

56

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1r M-77 fug OP-44 rint M-107 tdelay M-11
a2r M-81 gatenoise M-100 rout OP-40 tempeff O-1
a3r M-84 gds OP-17 rshg M-109 thephr M-42
agidlr M-94 gm OP-15 rvpoly M-108 ther1 M-53
alpexp M-73 gmb OP-16 sdiblexp M-64 ther2 M-54
alpr M-71 iavl OP-2 sdiblo M-63 therr M-50
bacc M-90 ids OP-1 sl2ko M-22 thesatexp M-58
beff OP-43 igaccr M-89 sl2phib M-30 thesatr M-55
betsq M-32 igb OP-5 sl3ko M-23 thesrr M-39
bgidl M-95 igd OP-4 sl3koexp M-24 thethexp M-61
binning M-112 iginvr M-87 sla1 M-79 thethr M-60
binv M-88 igovr M-93 sla2 M-82 tmin M-10
cbb OP-33 igs OP-3 sla3 M-85 tnom M-114
cbd OP-30 keff OP-42 slalp M-72 tox M-98
cbg OP-31 kor M-20 sletabet M-34 tr M-17
cbs OP-32 kov M-92 slko M-21 tref M-115
cdb OP-21 kpinv M-26 slphib M-29 trise I-8
cdd OP-18 l I-2 slssf M-69 type M-113
cdg OP-19 lap M-14 slthesat M-57 u OP-39
cds OP-20 leff OP-37 sqrtsff OP-46 vballmsg M-9
cgb OP-25 level M-1 sqrtsfw OP-45 vbdbhigh M-6
cgd OP-22 lmin M-76 ssfr M-68 vbdblow M-5
cgdol OP-34 lp1 M-36 sta1 M-78 vbds M-4
cgg OP-23 lp2 M-38 stbgidl M-96 vbox M-3
cgidl M-97 lvar M-13 stetamob M-46 vbsbhigh M-8
cgs OP-24 m I-10 stop M-12 vbsblow M-7
cgsol OP-35 meff O-2 stphib M-28 vds OP-6
col M-99 moexp M-67 stvfb M-19 vdss OP-13
compatible M-116 moo M-65 swa1 M-80 vearly OP-41
csb OP-29 mor M-66 swa2 M-83 vfb M-18
csd OP-26 mos_region OP-55 swa3 M-86 vfbov M-91
csg OP-27 mult I-1 swalp M-74 vgs OP-7
css OP-28 nf I-4 swetamob M-47 vgt OP-12
ctype OP-48 nfar M-102 swko M-25 von OP-49
diode_region OP-56 nfbr M-103 swphib M-31 vp M-75
dlsil M-110 nfcr M-104 swssf M-70 vsat OP-14
dta M-105 ngcon I-5 swtheph M-44 vsb OP-8
etabetr M-33 nt M-101 swther M-52 vth OP-11
etamobr M-45 nu M-48 swthesat M-59 vto OP-9
etaph M-43 nuexp M-49 swthesr M-41 vts OP-10
etar M-51 paramchk M-2 swtheth M-62 w I-3
etasat M-56 phibr M-27 table_ids OP-50 weff OP-36
etasr M-40 printscaled I-7 table_qb OP-54 wot M-16
fbet1 M-35 region I-9 table_qd OP-53 wvar M-15
fbet2 M-37 rg OP-38 table_qg OP-52 xgw I-6
fknee OP-47 rgo M-106 table_vth OP-51 xpart M-111

MOS Model 11, Level 1101 (mos11010t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11010t parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

vfb=-1.05 V

Flat-band voltage at reference temperature.

12

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

13

kor=0.5 V

Body effect coefficient for the reference transistor.

14

slko=0

Coefficient of the length dependence of KO.

15

sl2ko=0

Second coefficient of the length dependence of KO.

16

sl3ko=0

Third coefficient of the length dependence of KO.

17

sl3koexp=1

Exponent belonging to the third coefficient of the length dependence of KO.

18

swko=0

Coefficient of the width dependence of KO.

19

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

20

phibr=0.95 V

Surface potential at strong inversion.

21

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

22

slphib=0

Coefficient of the length dependence of PHIB.

23

sl2phib=0

Second coefficient of the length dependence of PHIB.

24

swphib=0

Coefficient of the width dependence of PHIB.

25

betsq=0.000371(n)/0.000115(p) A/V2

Gain factor for an infinite square transistor.

26

etabetr=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

27

sletabet=0

Coefficient of length dependence of ETABETR.

28

fbet1=0

Relative mobility decrease due to first lateral profile.

29

lp1=8e-07 m

Characteristic length of first lateral profile.

30

fbet2=0

Relative mobility decrease due to second lateral profile.

31

lp2=8e-07 m

Characteristic length of second lateral profile.

32

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

33

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

34

swthesr=0

Coefficient of the width dependence of THESR.

35

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

36

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

37

swtheph=0

Coefficient of the width dependence of THEPH.

38

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

39

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

40

swetamob=0

Coefficient of the width dependence of ETAMOB.

41

nu=2

Exponent of field dependence of mobility model.

42

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

43

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

44

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

45

swther=0

Coefficient of the width dependence of THER.

46

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

47

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

48

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

49

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

50

slthesat=1

Coefficient of length dependence of THESAT.

51

thesatexp=1

Exponent of length dependence of THESAT.

52

swthesat=0

Coefficient of the width dependence of THESAT.

53

thethr=0.001(n)/0.0005(p) 1/V3

Coefficient of self-heating.

54

thethexp=1

Exponent of the length dependence of THETH.

55

swtheth=0

Coefficient of the width dependence of THETH.

56

sdiblo=0.0001 1/V

Drain-induced barrier lowering parameter.

57

sdiblexp=1.35

Exponent of the length dependence of SDIBL.

58

moo=0

Parameter for short-channel subthreshold slope.

59

mor=0

Parameter for short-channel subthreshold slope per unit length.

60

moexp=1.34

Exponent of the length dependence of MO.

61

ssfr=0.00625 1/V

Static feedback parameter.

62

slssf=1

Coefficient of the length dependence of SSF.

63

swssf=0

Coefficient of the width dependence of SSF.

64

alpr=0.01

Factor of the channel length modulation.

65

slalp=1

Coefficient of the length dependence of ALP.

66

alpexp=1

Exponent of the length dependence of ALP.

67

swalp=0

Coefficient of the width dependence of ALP.

68

vp=0.05 V

Characteristic voltage of channel-length modulation.

69

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

70

a1r=6

Factor of the weak-avalanche current.

71

sta1=0 1/K

Coefficient of the temperature dependence of A1.

72

sla1=0

Coefficient of the length dependence of A1.

73

swa1=0

Coefficient of the width dependence of A1.

74

a2r=38 V

Exponent of the weak-avalanche current.

75

sla2=0

Coefficient of the length dependence of A2.

76

swa2=0

Coefficient of the width dependence of A2.

77

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

78

sla3=0

Coefficient of the length dependence of A3.

79

swa3=0

Coefficient of the width dependence of A3.

80

iginvr=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

81

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

82

igaccr=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

83

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

84

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

85

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

86

igovr=0 A/V2

Gain factor for Source/Drain overlap gate tunneling current.

87

agidlr=0 A/V3

Gain factor for gate-induced leakage current.

88

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

89

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

90

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

91

tox=3.2e-09 m

Thickness of gate oxide layer.

92

col=3.2e-16 F

Gate overlap capacitance for a channel width of 1 um.

93

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

94

nt=1.62e-20 J

Thermal noise coefficient.

95

nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)

First coefficient of the flicker noise for a channel area of 1 um^2.

96

nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)

Second coefficient of the flicker noise for a channel area of 1 um^2.

97

nfcr=0(n)/7.3e-08(p) 1/V

Third coefficient of the flicker noise for a channel area of 1 um^2.

98

dta=0 K

Temperature offset of the device.

99

rgo=0

Gate resistance.

100

rint=0 m2

Contact resistance between silicide and poly.

101

rvpoly=0 m2

Vertical poly resistance.

102

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

103

dlsil=0 m

Silicide extension over the physical gate length.

104

rth=300 K/W

Thermal resistance.

105

cth=3e-09 J/K

Thermal capacitance.

106

ath=0

Temperature coefficient of the thermal resistance.

107

binning=0

flag for eldo model.

108

type=n

Transistor gender. Possible values are n and p.

109

imax=1000 A

Explosion current.

110

tnom (C)

alias of tnom.

111

tref (C)

alias of tnom.

112

simkitver=3.4

113

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

Pdiss (W)

Dissipation.

49

TK (K)

Actual device temperature.

50

ctype

Channel type (-1 for PMOS, +1 for NMOS).

51

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

52

table_ids (A)

Current.

53

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

54

table_qg (Coul)

Charge at g node.

55

table_qd (Coul)

Charge at d node.

56

table_qb (Coul)

Charge at b node.

57

pwr (W)

Power.

58

mos_region

MOS region.
Possible values are off, sat, triode,  and subth.

59

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-48 fbet2 M-37 rgo M-106 tdelay M-11
TK OP-49 fknee OP-47 rint M-107 tempeff O-1
a1r M-77 fug OP-44 rout OP-40 thephr M-42
a2r M-81 gatenoise M-100 rshg M-109 ther1 M-53
a3r M-84 gds OP-17 rth M-112 ther2 M-54
agidlr M-94 gm OP-15 rvpoly M-108 therr M-50
alpexp M-73 gmb OP-16 sdiblexp M-64 thesatexp M-58
alpr M-71 iavl OP-2 sdiblo M-63 thesatr M-55
ath M-114 ids OP-1 sl2ko M-22 thesrr M-39
bacc M-90 igaccr M-89 sl2phib M-30 thethexp M-61
beff OP-43 igb OP-5 sl3ko M-23 thethr M-60
betsq M-32 igd OP-4 sl3koexp M-24 tmin M-10
bgidl M-95 iginvr M-87 sla1 M-79 tnom M-117
binning M-115 igovr M-93 sla2 M-82 tox M-98
binv M-88 igs OP-3 sla3 M-85 tr M-17
cbb OP-33 keff OP-42 slalp M-72 tref M-118
cbd OP-30 kor M-20 sletabet M-34 trise I-8
cbg OP-31 kov M-92 slko M-21 type M-116
cbs OP-32 kpinv M-26 slphib M-29 u OP-39
cdb OP-21 l I-2 slssf M-69 vballmsg M-9
cdd OP-18 lap M-14 slthesat M-57 vbdbhigh M-6
cdg OP-19 leff OP-37 sqrtsff OP-46 vbdblow M-5
cds OP-20 level M-1 sqrtsfw OP-45 vbds M-4
cgb OP-25 lmin M-76 ssfr M-68 vbox M-3
cgd OP-22 lp1 M-36 sta1 M-78 vbsbhigh M-8
cgdol OP-34 lp2 M-38 stbgidl M-96 vbsblow M-7
cgg OP-23 lvar M-13 stetamob M-46 vds OP-6
cgidl M-97 m I-10 stop M-12 vdss OP-13
cgs OP-24 meff O-2 stphib M-28 vearly OP-41
cgsol OP-35 moexp M-67 stvfb M-19 vfb M-18
col M-99 moo M-65 swa1 M-80 vfbov M-91
compatible M-119 mor M-66 swa2 M-83 vgs OP-7
csb OP-29 mos_region OP-58 swa3 M-86 vgt OP-12
csd OP-26 mult I-1 swalp M-74 von OP-51
csg OP-27 nf I-4 swetamob M-47 vp M-75
css OP-28 nfar M-102 swko M-25 vsat OP-14
cth M-113 nfbr M-103 swphib M-31 vsb OP-8
ctype OP-50 nfcr M-104 swssf M-70 vth OP-11
diode_region OP-59 ngcon I-5 swtheph M-44 vto OP-9
dlsil M-110 nt M-101 swther M-52 vts OP-10
dta M-105 nu M-48 swthesat M-59 w I-3
etabetr M-33 nuexp M-49 swthesr M-41 weff OP-36
etamobr M-45 paramchk M-2 swtheth M-62 wot M-16
etaph M-43 phibr M-27 table_ids OP-52 wvar M-15
etar M-51 printscaled I-7 table_qb OP-56 xgw I-6
etasat M-56 pwr OP-57 table_qd OP-55 xpart M-111
etasr M-40 region I-9 table_qg OP-54
fbet1 M-35 rg OP-38 table_vth OP-53

MOS Model 11, Level 1101 (mos11011)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11011 parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

lmin=0 m

Device length low limit for binning selection.

12

lmax=1 m

Device length high limit for binning selection.

13

wmin=0 m

Device width low limit for binning selection.

14

wmax=1 m

Device width high limit for binning selection.

15

vfb=-1.05 V

Flat-band voltage at reference temperature.

16

poko=0.5 V

Coefficient for the geometry independent part of KO.

17

plko=0 V

Coefficient for the length dependence of KO.

18

pwko=0 V

Coefficient for the width dependence of KO.

19

plwko=0 V

Coefficient for the length times width dependence of KO.

20

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

21

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

22

plphib=0 V

Coefficient for the length dependence of PHIB.

23

pwphib=0 V

Coefficient for the width dependence of PHIB.

24

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

25

pobet=0.00192(n)/0.000381(p) A/V2

Coefficient for the geometry independent part of BET.

26

plbet=0 A/V2

Coefficient for the length dependence of BET.

27

pwbet=0 A/V2

Coefficient for the width dependence of BET.

28

plwbet=0 A/V2

Coefficient for the width over length dependence of BET.

29

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry independent part of THESR.

30

plthesr=0 1/V

Coefficient of the length dependence of THESR.

31

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

32

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

33

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry independent part of THEPH.

34

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

35

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

36

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

37

poetamob=1.4(n)/3(p)

Coefficient of the geometry independent part of ETAMOB.

38

pletamob=0

Coefficient of the length dependence of ETAMOB.

39

pwetamob=0

Coefficient of the width dependence of ETAMOB.

40

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

41

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry independent part of THER.

42

plther=0 1/V

Coefficient of the length dependence of THER.

43

pwther=0 1/V

Coefficient of the width dependence of THER.

44

plwther=0 1/V

Coefficient of the length times width dependence of THER.

45

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

46

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

47

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry independent part of THESAT.

48

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

49

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

50

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

51

potheth=1e-05(n)/0(p) 1/V3

Coefficient of the geometry independent part of THETH.

52

pltheth=0 1/V3

Coefficient of the length dependence of THETH.

53

pwtheth=0 1/V3

Coefficient of the width dependence of THETH.

54

plwtheth=0 1/V3

Coefficient of the length times width dependence of THETH.

55

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry independent part of SDIBL.

56

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

57

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

58

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

59

pomo=0

Coefficient of the geometry independent part of MO.

60

plmo=0

Coefficient of the length dependence of MO.

61

pwmo=0

Coefficient of the width dependence of MO.

62

plwmo=0

Coefficient of the length times width dependence of MO.

63

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry independent part of SSF.

64

plssf=0 1/V

Coefficient of the length dependence of SSF.

65

pwssf=0 1/V

Coefficient of the width dependence of SSF.

66

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

67

poalp=0.025

Coefficient of the geometry independent part of ALP.

68

plalp=0

Coefficient of the length dependence of ALP.

69

pwalp=0

Coefficient of the width dependence of ALP.

70

plwalp=0

Coefficient of the length times width dependence of ALP.

71

vp=0.05 V

Characteristic voltage of channel-length modulation.

72

pomexp=0.2

Coefficient of the geometry independent part of MEXP.

73

plmexp=0

Coefficient of the length dependence of MEXP.

74

pwmexp=0

Coefficient of the width dependence of MEXP.

75

plwmexp=0

Coefficient of the length times width dependence of MEXP.

76

poa1=6.02(n)/6.86(p)

Coefficient of the geometry independent part of A1.

77

pla1=0

Coefficient of the length dependence of A1.

78

pwa1=0

Coefficient of the width dependence of A1.

79

plwa1=0

Coefficient of the length times width dependence of A1.

80

poa2=38(n)/57.3(p) V

Coefficient of the geometry independent part of A2.

81

pla2=0 V

Coefficient of the length dependence of A2.

82

pwa2=0 V

Coefficient of the width dependence of A2.

83

plwa2=0 V

Coefficient of the length times width dependence of A2.

84

poa3=0.641(n)/0.425(p)

Coefficient of the geometry independent part of A3.

85

pla3=0

Coefficient of the length dependence of A3.

86

pwa3=0

Coefficient of the width dependence of A3.

87

plwa3=0

Coefficient of the length times width dependence of A3.

88

poiginv=0 A/V2

Coefficient of the geometry independent part of IGINV.

89

pliginv=0 A/V2

Coefficient of the length dependence of IGINV.

90

pwiginv=0 A/V2

Coefficient of the width dependence of IGINV.

91

plwiginv=0 A/V2

Coefficient of the length times width dependence of IGINV.

92

pobinv=48(n)/87.5(p) V

Coefficient of the geometry independent part of BINV.

93

plbinv=0 V

Coefficient of the length dependence of BINV.

94

pwbinv=0 V

Coefficient of the width dependence of BINV.

95

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

96

poigacc=0 A/V2

Coefficient of the geometry independent part of IGACC.

97

pligacc=0 A/V2

Coefficient of the length dependence of IGACC.

98

pwigacc=0 A/V2

Coefficient of the width dependence of IGACC.

99

plwigacc=0 A/V2

Coefficient of the length times width dependence of IGACC.

100

pobacc=48 V

Coefficient of the geometry independent part of BACC.

101

plbacc=0 V

Coefficient of the length dependence of BACC.

102

pwbacc=0 V

Coefficient of the width dependence of BACC.

103

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

104

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

105

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

106

poigov=0 A/V2

Coefficient of the geometry independent part of IGOV.

107

pligov=0 A/V2

Coefficient of the length dependence of IGOV.

108

pwigov=0 A/V2

Coefficient of the width dependence of IGOV.

109

plwigov=0 A/V2

Coefficient of the length times width dependence of IGOV.

110

poagidl=0 A/V3

Coefficient of the geometry independent part of AGIDL.

111

plagidl=0 A/V3

Coefficient of the length dependence of AGIDL.

112

pwagidl=0 A/V3

Coefficient of the width dependence of AGIDL.

113

plwagidl=0 A/V3

Coefficient of the length times width dependence of AGIDL.

114

pobgidl=41 V

Coefficient of the geometry independent part of BGIDL.

115

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

116

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

117

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

118

pocgidl=0

Coefficient of the geometry independent part of CGIDL.

119

plcgidl=0

Coefficient of the length dependence of CGIDL.

120

pwcgidl=0

Coefficient of the width dependence of CGIDL.

121

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

122

tox=3.2e-09 m

Thickness of gate oxide layer.

123

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry independent part of COX.

124

plcox=0 F

Coefficient of the length dependence of COX.

125

pwcox=0 F

Coefficient of the width dependence of COX.

126

plwcox=0 F

Coefficient of the length times width dependence of COX.

127

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGDO.

128

plcgdo=0 F

Coefficient of the length dependence of CGDO.

129

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

130

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

131

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGSO.

132

plcgso=0 F

Coefficient of the length dependence of CGSO.

133

pwcgso=0 F

Coefficient of the width dependence of CGSO.

134

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

135

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

136

nt=1.62e-20 J

Thermal noise coefficient.

137

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4

Coefficient of the geometry independent part of NFA.

138

plnfa=0 1/V m4

Coefficient of the length dependence of NFA.

139

pwnfa=0 1/V m4

Coefficient of the width dependence of NFA.

140

plwnfa=0 1/V m4

Coefficient of the length times width dependence of NFA.

141

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2

Coefficient of the geometry independent part of NFB.

142

plnfb=0 1/V m2

Coefficient of the length dependence of NFB.

143

pwnfb=0 1/V m2

Coefficient of the width dependence of NFB.

144

plwnfb=0 1/V m2

Coefficient of the length times width dependence of NFB.

145

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry independent part of NFC.

146

plnfc=0 1/V

Coefficient of the length dependence of NFC.

147

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

148

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

149

potvfb=0.0005 V/K

Coefficient of the geometry independent part of STVFB.

150

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

151

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

152

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

153

potphib=-0.00085 V/K

Coefficient of the geometry independent part of STPHIB.

154

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

155

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

156

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

157

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry independent part of ETABET.

158

pltetabet=0

Coefficient of the length dependence of ETABET.

159

pwtetabet=0

Coefficient of the width dependence of ETABET.

160

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

161

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry independent part of ETASR.

162

pltetasr=0

Coefficient of the length dependence of ETASR.

163

pwtetasr=0

Coefficient of the width dependence of ETASR.

164

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

165

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry independent part of ETAPH.

166

pltetaph=0

Coefficient of the length dependence of ETAPH.

167

pwtetaph=0

Coefficient of the width dependence of ETAPH.

168

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

169

potetamob=0 1/K

Coefficient of the geometry independent part of STETAMOB.

170

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

171

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

172

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

173

nu=2

Exponent of field dependence of mobility model.

174

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry independent part of NUEXP.

175

pltnuexp=0

Coefficient of the length dependence of NUEXP.

176

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

177

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

178

potetar=0.95(n)/0.4(p)

Coefficient of the geometry independent part of ETAR.

179

pltetar=0

Coefficient of the length dependence of ETAR.

180

pwtetar=0

Coefficient of the width dependence of ETAR.

181

plwtetar=0

Coefficient of the length times width dependence of ETAR.

182

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry independent part of ETASAT.

183

pltetasat=0

Coefficient of the length dependence of ETASAT.

184

pwtetasat=0

Coefficient of the width dependence of ETASAT.

185

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

186

pota1=0 1/K

Coefficient of the geometry independent part of STA1.

187

plta1=0 1/K

Coefficient of the length dependence of STA1.

188

pwta1=0 1/K

Coefficient of the width dependence of STA1.

189

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

190

potbgidl=-0.000364 V/K

Coefficient of the geometry independent part of STBGIDL.

191

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

192

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

193

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

194

dta=0 K

Temperature offset of the device.

195

rgo=0

Gate resistance.

196

rint=0 m2

Contact resistance between silicide and poly.

197

rvpoly=0 m2

Vertical poly resistance.

198

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

199

dlsil=0 m

Silicide extension over the physical gate length.

200

binning=0

flag for eldo model.

201

type=n

Transistor gender. Possible values are n and p.

202

imax=1000 A

Explosion current.

203

tnom (C)

alias of tnom.

204

tref (C)

alias of tnom.

205

simkitver=3.4

206

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

BET (A/V2)

Gain factor.

49

ctype

Channel type (-1 for PMOS, +1 for NMOS).

50

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

51

table_ids (A)

Current.

52

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

53

table_qg (Coul)

Charge at g node.

54

table_qd (Coul)

Charge at d node.

55

table_qb (Coul)

Charge at b node.

56

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

57

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BET OP-48 pliginv M-96 poa3 M-91 pwtetaph M-174
beff OP-43 pligov M-114 poagidl M-117 pwtetar M-187
binning M-208 plko M-24 poalp M-74 pwtetasat M-191
cbb OP-33 plmexp M-80 pobacc M-107 pwtetasr M-170
cbd OP-30 plmo M-67 pobet M-32 pwtheph M-42
cbg OP-31 plnfa M-145 pobgidl M-121 pwther M-50
cbs OP-32 plnfb M-149 pobinv M-99 pwthesat M-56
cdb OP-21 plnfc M-153 pocgdo M-134 pwthesr M-38
cdd OP-18 plphib M-29 pocgidl M-125 pwtheth M-60
cdg OP-19 plsdibl M-63 pocgso M-138 pwtnuexp M-183
cds OP-20 plssf M-71 pocox M-130 pwtphib M-162
cgb OP-25 plta1 M-194 poetamob M-44 pwtvfb M-158
cgd OP-22 pltbgidl M-198 poigacc M-103 region I-9
cgdol OP-34 pltetabet M-165 poiginv M-95 rg OP-38
cgg OP-23 pltetamob M-177 poigov M-113 rgo M-202
cgs OP-24 pltetaph M-173 poko M-23 rint M-203
cgsol OP-35 pltetar M-186 pomexp M-79 rout OP-40
compatible M-212 pltetasat M-190 pomo M-66 rshg M-205
csb OP-29 pltetasr M-169 ponfa M-144 rvpoly M-204
csd OP-26 pltheph M-41 ponfb M-148 sqrtsff OP-46
csg OP-27 plther M-49 ponfc M-152 sqrtsfw OP-45
css OP-28 plthesat M-55 pophib M-28 stop M-12
ctype OP-49 plthesr M-37 posdibl M-62 table_ids OP-51
diode_region OP-57 pltheth M-59 possf M-70 table_qb OP-55
dlsil M-206 pltnuexp M-182 pota1 M-193 table_qd OP-54
dta M-201 pltphib M-161 potbgidl M-197 table_qg OP-53
fknee OP-47 pltvfb M-157 potetabet M-164 table_vth OP-52
fug OP-44 plwa1 M-86 potetamob M-176 tdelay M-11
gatenoise M-142 plwa2 M-90 potetaph M-172 tempeff O-1
gds OP-17 plwa3 M-94 potetar M-185 ther1 M-52
gm OP-15 plwagidl M-120 potetasat M-189 ther2 M-53
gmb OP-16 plwalp M-77 potetasr M-168 tmin M-10
iavl OP-2 plwbacc M-110 potheph M-40 tnom M-210
ids OP-1 plwbet M-35 pother M-48 tox M-129
igb OP-5 plwbgidl M-124 pothesat M-54 tr M-17
igd OP-4 plwbinv M-102 pothesr M-36 tref M-211
igs OP-3 plwcgdo M-137 potheth M-58 trise I-8
keff OP-42 plwcgidl M-128 potnuexp M-181 type M-209
kov M-112 plwcgso M-141 potphib M-160 u OP-39
kpinv M-27 plwcox M-133 potvfb M-156 vballmsg M-9
l I-2 plwetamob M-47 printscaled I-7 vbdbhigh M-6
lap M-14 plwigacc M-106 pwa1 M-85 vbdblow M-5
leff OP-37 plwiginv M-98 pwa2 M-89 vbds M-4
level M-1 plwigov M-116 pwa3 M-93 vbox M-3
lmax M-19 plwko M-26 pwagidl M-119 vbsbhigh M-8
lmin M-18 plwmexp M-82 pwalp M-76 vbsblow M-7
lvar M-13 plwmo M-69 pwbacc M-109 vds OP-6
m I-10 plwnfa M-147 pwbet M-34 vdss OP-13
meff O-2 plwnfb M-151 pwbgidl M-123 vearly OP-41
mos_region OP-56 plwnfc M-155 pwbinv M-101 vfb M-22
mult I-1 plwphib M-31 pwcgdo M-136 vfbov M-111
nf I-4 plwsdibl M-65 pwcgidl M-127 vgs OP-7
ngcon I-5 plwssf M-73 pwcgso M-140 vgt OP-12
nt M-143 plwta1 M-196 pwcox M-132 von OP-50
nu M-180 plwtbgidl M-200 pwetamob M-46 vp M-78
paramchk M-2 plwtetabet M-167 pwigacc M-105 vsat OP-14
pla1 M-84 plwtetamob M-179 pwiginv M-97 vsb OP-8
pla2 M-88 plwtetaph M-175 pwigov M-115 vth OP-11
pla3 M-92 plwtetar M-188 pwko M-25 vto OP-9
plagidl M-118 plwtetasat M-192 pwmexp M-81 vts OP-10
plalp M-75 plwtetasr M-171 pwmo M-68 w I-3
plbacc M-108 plwtheph M-43 pwnfa M-146 weff OP-36
plbet M-33 plwther M-51 pwnfb M-150 wmax M-21
plbgidl M-122 plwthesat M-57 pwnfc M-154 wmin M-20
plbinv M-100 plwthesr M-39 pwphib M-30 wot M-16
plcgdo M-135 plwtheth M-61 pwsdibl M-64 wvar M-15
plcgidl M-126 plwtnuexp M-184 pwssf M-72 xgw I-6
plcgso M-139 plwtphib M-163 pwta1 M-195 xpart M-207
plcox M-131 plwtvfb M-159 pwtbgidl M-199
pletamob M-45 poa1 M-83 pwtetabet M-166
pligacc M-104 poa2 M-87 pwtetamob M-178

MOS Model 11, Level 1101 (mos11011t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

1

0  m=1

Alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11011t parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

lmin=0 m

Device length low limit for binning selection.

12

lmax=1 m

Device length high limit for binning selection.

13

wmin=0 m

Device width low limit for binning selection.

14

wmax=1 m

Device width high limit for binning selection.

15

vfb=-1.05 V

Flat-band voltage at reference temperature.

16

poko=0.5 V

Coefficient for the geometry independent part of KO.

17

plko=0 V

Coefficient for the length dependence of KO.

18

pwko=0 V

Coefficient for the width dependence of KO.

19

plwko=0 V

Coefficient for the length times width dependence of KO.

20

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

21

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

22

plphib=0 V

Coefficient for the length dependence of PHIB.

23

pwphib=0 V

Coefficient for the width dependence of PHIB.

24

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

25

pobet=0.00192(n)/0.000381(p) A/V2

Coefficient for the geometry independent part of BET.

26

plbet=0 A/V2

Coefficient for the length dependence of BET.

27

pwbet=0 A/V2

Coefficient for the width dependence of BET.

28

plwbet=0 A/V2

Coefficient for the width over length dependence of BET.

29

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry independent part of THESR.

30

plthesr=0 1/V

Coefficient of the length dependence of THESR.

31

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

32

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

33

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry independent part of THEPH.

34

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

35

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

36

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

37

poetamob=1.4(n)/3(p)

Coefficient of the geometry independent part of ETAMOB.

38

pletamob=0

Coefficient of the length dependence of ETAMOB.

39

pwetamob=0

Coefficient of the width dependence of ETAMOB.

40

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

41

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry independent part of THER.

42

plther=0 1/V

Coefficient of the length dependence of THER.

43

pwther=0 1/V

Coefficient of the width dependence of THER.

44

plwther=0 1/V

Coefficient of the length times width dependence of THER.

45

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

46

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

47

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry independent part of THESAT.

48

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

49

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

50

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

51

potheth=1e-05(n)/0(p) 1/V3

Coefficient of the geometry independent part of THETH.

52

pltheth=0 1/V3

Coefficient of the length dependence of THETH.

53

pwtheth=0 1/V3

Coefficient of the width dependence of THETH.

54

plwtheth=0 1/V3

Coefficient of the length times width dependence of THETH.

55

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry independent part of SDIBL.

56

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

57

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

58

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

59

pomo=0

Coefficient of the geometry independent part of MO.

60

plmo=0

Coefficient of the length dependence of MO.

61

pwmo=0

Coefficient of the width dependence of MO.

62

plwmo=0

Coefficient of the length times width dependence of MO.

63

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry independent part of SSF.

64

plssf=0 1/V

Coefficient of the length dependence of SSF.

65

pwssf=0 1/V

Coefficient of the width dependence of SSF.

66

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

67

poalp=0.025

Coefficient of the geometry independent part of ALP.

68

plalp=0

Coefficient of the length dependence of ALP.

69

pwalp=0

Coefficient of the width dependence of ALP.

70

plwalp=0

Coefficient of the length times width dependence of ALP.

71

vp=0.05 V

Characteristic voltage of channel-length modulation.

72

pomexp=0.2

Coefficient of the geometry independent part of MEXP.

73

plmexp=0

Coefficient of the length dependence of MEXP.

74

pwmexp=0

Coefficient of the width dependence of MEXP.

75

plwmexp=0

Coefficient of the length times width dependence of MEXP.

76

poa1=6.02(n)/6.86(p)

Coefficient of the geometry independent part of A1.

77

pla1=0

Coefficient of the length dependence of A1.

78

pwa1=0

Coefficient of the width dependence of A1.

79

plwa1=0

Coefficient of the length times width dependence of A1.

80

poa2=38(n)/57.3(p) V

Coefficient of the geometry independent part of A2.

81

pla2=0 V

Coefficient of the length dependence of A2.

82

pwa2=0 V

Coefficient of the width dependence of A2.

83

plwa2=0 V

Coefficient of the length times width dependence of A2.

84

poa3=0.641(n)/0.425(p)

Coefficient of the geometry independent part of A3.

85

pla3=0

Coefficient of the length dependence of A3.

86

pwa3=0

Coefficient of the width dependence of A3.

87

plwa3=0

Coefficient of the length times width dependence of A3.

88

poiginv=0 A/V2

Coefficient of the geometry independent part of IGINV.

89

pliginv=0 A/V2

Coefficient of the length dependence of IGINV.

90

pwiginv=0 A/V2

Coefficient of the width dependence of IGINV.

91

plwiginv=0 A/V2

Coefficient of the length times width dependence of IGINV.

92

pobinv=48(n)/87.5(p) V

Coefficient of the geometry independent part of BINV.

93

plbinv=0 V

Coefficient of the length dependence of BINV.

94

pwbinv=0 V

Coefficient of the width dependence of BINV.

95

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

96

poigacc=0 A/V2

Coefficient of the geometry independent part of IGACC.

97

pligacc=0 A/V2

Coefficient of the length dependence of IGACC.

98

pwigacc=0 A/V2

Coefficient of the width dependence of IGACC.

99

plwigacc=0 A/V2

Coefficient of the length times width dependence of IGACC.

100

pobacc=48 V

Coefficient of the geometry independent part of BACC.

101

plbacc=0 V

Coefficient of the length dependence of BACC.

102

pwbacc=0 V

Coefficient of the width dependence of BACC.

103

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

104

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

105

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

106

poigov=0 A/V2

Coefficient of the geometry independent part of IGOV.

107

pligov=0 A/V2

Coefficient of the length dependence of IGOV.

108

pwigov=0 A/V2

Coefficient of the width dependence of IGOV.

109

plwigov=0 A/V2

Coefficient of the length times width dependence of IGOV.

110

poagidl=0 A/V3

Coefficient of the geometry independent part of AGIDL.

111

plagidl=0 A/V3

Coefficient of the length dependence of AGIDL.

112

pwagidl=0 A/V3

Coefficient of the width dependence of AGIDL.

113

plwagidl=0 A/V3

Coefficient of the length times width dependence of AGIDL.

114

pobgidl=41 V

Coefficient of the geometry independent part of BGIDL.

115

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

116

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

117

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

118

pocgidl=0

Coefficient of the geometry independent part of CGIDL.

119

plcgidl=0

Coefficient of the length dependence of CGIDL.

120

pwcgidl=0

Coefficient of the width dependence of CGIDL.

121

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

122

tox=3.2e-09 m

Thickness of gate oxide layer.

123

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry independent part of COX.

124

plcox=0 F

Coefficient of the length dependence of COX.

125

pwcox=0 F

Coefficient of the width dependence of COX.

126

plwcox=0 F

Coefficient of the length times width dependence of COX.

127

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGDO.

128

plcgdo=0 F

Coefficient of the length dependence of CGDO.

129

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

130

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

131

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGSO.

132

plcgso=0 F

Coefficient of the length dependence of CGSO.

133

pwcgso=0 F

Coefficient of the width dependence of CGSO.

134

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

135

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

136

nt=1.62e-20 J

Thermal noise coefficient.

137

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4

Coefficient of the geometry independent part of NFA.

138

plnfa=0 1/V m4

Coefficient of the length dependence of NFA.

139

pwnfa=0 1/V m4

Coefficient of the width dependence of NFA.

140

plwnfa=0 1/V m4

Coefficient of the length times width dependence of NFA.

141

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2

Coefficient of the geometry independent part of NFB.

142

plnfb=0 1/V m2

Coefficient of the length dependence of NFB.

143

pwnfb=0 1/V m2

Coefficient of the width dependence of NFB.

144

plwnfb=0 1/V m2

Coefficient of the length times width dependence of NFB.

145

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry independent part of NFC.

146

plnfc=0 1/V

Coefficient of the length dependence of NFC.

147

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

148

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

149

potvfb=0.0005 V/K

Coefficient of the geometry independent part of STVFB.

150

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

151

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

152

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

153

potphib=-0.00085 V/K

Coefficient of the geometry independent part of STPHIB.

154

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

155

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

156

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

157

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry independent part of ETABET.

158

pltetabet=0

Coefficient of the length dependence of ETABET.

159

pwtetabet=0

Coefficient of the width dependence of ETABET.

160

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

161

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry independent part of ETASR.

162

pltetasr=0

Coefficient of the length dependence of ETASR.

163

pwtetasr=0

Coefficient of the width dependence of ETASR.

164

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

165

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry independent part of ETAPH.

166

pltetaph=0

Coefficient of the length dependence of ETAPH.

167

pwtetaph=0

Coefficient of the width dependence of ETAPH.

168

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

169

potetamob=0 1/K

Coefficient of the geometry independent part of STETAMOB.

170

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

171

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

172

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

173

nu=2

Exponent of field dependence of mobility model.

174

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry independent part of NUEXP.

175

pltnuexp=0

Coefficient of the length dependence of NUEXP.

176

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

177

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

178

potetar=0.95(n)/0.4(p)

Coefficient of the geometry independent part of ETAR.

179

pltetar=0

Coefficient of the length dependence of ETAR.

180

pwtetar=0

Coefficient of the width dependence of ETAR.

181

plwtetar=0

Coefficient of the length times width dependence of ETAR.

182

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry independent part of ETASAT.

183

pltetasat=0

Coefficient of the length dependence of ETASAT.

184

pwtetasat=0

Coefficient of the width dependence of ETASAT.

185

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

186

pota1=0 1/K

Coefficient of the geometry independent part of STA1.

187

plta1=0 1/K

Coefficient of the length dependence of STA1.

188

pwta1=0 1/K

Coefficient of the width dependence of STA1.

189

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

190

potbgidl=-0.000364 V/K

Coefficient of the geometry independent part of STBGIDL.

191

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

192

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

193

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

194

dta=0 K

Temperature offset of the device.

195

rgo=0

Gate resistance.

196

rint=0 m2

Contact resistance between silicide and poly.

197

rvpoly=0 m2

Vertical poly resistance.

198

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

199

dlsil=0 m

Silicide extension over the physical gate length.

200

rth=300 K/W

Thermal resistance.

201

cth=3e-09 J/K

Thermal capacitance.

202

ath=0

Temperature coefficient of the thermal resistance.

203

binning=0

flag for eldo model.

204

type=n

Transistor gender. Possible values are n and p.

205

imax=1000 A

Explosion current.

206

tnom (C)

alias of tnom.

207

tref (C)

alias of tnom.

208

simkitver=3.4

209

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

Pdiss (W)

Dissipation.

49

TK (K)

Actual device temperature.

50

BET (A/V2)

Gain factor.

51

ctype

Channel type (-1 for PMOS, +1 for NMOS).

52

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

53

table_ids (A)

Current.

54

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

55

table_qg (Coul)

Charge at g node.

56

table_qd (Coul)

Charge at d node.

57

table_qb (Coul)

Charge at b node.

58

pwr (W)

Power.

59

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode,  and subth

60

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BET OP-50 plcox M-131 poa1 M-83 pwtetabet M-166
Pdiss OP-48 pletamob M-45 poa2 M-87 pwtetamob M-178
TK OP-49 pligacc M-104 poa3 M-91 pwtetaph M-174
ath M-210 pliginv M-96 poagidl M-117 pwtetar M-187
beff OP-43 pligov M-114 poalp M-74 pwtetasat M-191
binning M-211 plko M-24 pobacc M-107 pwtetasr M-170
cbb OP-33 plmexp M-80 pobet M-32 pwtheph M-42
cbd OP-30 plmo M-67 pobgidl M-121 pwther M-50
cbg OP-31 plnfa M-145 pobinv M-99 pwthesat M-56
cbs OP-32 plnfb M-149 pocgdo M-134 pwthesr M-38
cdb OP-21 plnfc M-153 pocgidl M-125 pwtheth M-60
cdd OP-18 plphib M-29 pocgso M-138 pwtnuexp M-183
cdg OP-19 plsdibl M-63 pocox M-130 pwtphib M-162
cds OP-20 plssf M-71 poetamob M-44 pwtvfb M-158
cgb OP-25 plta1 M-194 poigacc M-103 region I-9
cgd OP-22 pltbgidl M-198 poiginv M-95 rg OP-38
cgdol OP-34 pltetabet M-165 poigov M-113 rgo M-202
cgg OP-23 pltetamob M-177 poko M-23 rint M-203
cgs OP-24 pltetaph M-173 pomexp M-79 rout OP-40
cgsol OP-35 pltetar M-186 pomo M-66 rshg M-205
compatible M-215 pltetasat M-190 ponfa M-144 rth M-208
csb OP-29 pltetasr M-169 ponfb M-148 rvpoly M-204
csd OP-26 pltheph M-41 ponfc M-152 sqrtsff OP-46
csg OP-27 plther M-49 pophib M-28 sqrtsfw OP-45
css OP-28 plthesat M-55 posdibl M-62 stop M-12
cth M-209 plthesr M-37 possf M-70 table_ids OP-53
ctype OP-51 pltheth M-59 pota1 M-193 table_qb OP-57
diode_region OP-60 pltnuexp M-182 potbgidl M-197 table_qd OP-56
dlsil M-206 pltphib M-161 potetabet M-164 table_qg OP-55
dta M-201 pltvfb M-157 potetamob M-176 table_vth OP-54
fknee OP-47 plwa1 M-86 potetaph M-172 tdelay M-11
fug OP-44 plwa2 M-90 potetar M-185 tempeff O-1
gatenoise M-142 plwa3 M-94 potetasat M-189 ther1 M-52
gds OP-17 plwagidl M-120 potetasr M-168 ther2 M-53
gm OP-15 plwalp M-77 potheph M-40 tmin M-10
gmb OP-16 plwbacc M-110 pother M-48 tnom M-213
iavl OP-2 plwbet M-35 pothesat M-54 tox M-129
ids OP-1 plwbgidl M-124 pothesr M-36 tr M-17
igb OP-5 plwbinv M-102 potheth M-58 tref M-214
igd OP-4 plwcgdo M-137 potnuexp M-181 trise I-8
igs OP-3 plwcgidl M-128 potphib M-160 type M-212
keff OP-42 plwcgso M-141 potvfb M-156 u OP-39
kov M-112 plwcox M-133 printscaled I-7 vballmsg M-9
kpinv M-27 plwetamob M-47 pwa1 M-85 vbdbhigh M-6
l I-2 plwigacc M-106 pwa2 M-89 vbdblow M-5
lap M-14 plwiginv M-98 pwa3 M-93 vbds M-4
leff OP-37 plwigov M-116 pwagidl M-119 vbox M-3
level M-1 plwko M-26 pwalp M-76 vbsbhigh M-8
lmax M-19 plwmexp M-82 pwbacc M-109 vbsblow M-7
lmin M-18 plwmo M-69 pwbet M-34 vds OP-6
lvar M-13 plwnfa M-147 pwbgidl M-123 vdss OP-13
m I-10 plwnfb M-151 pwbinv M-101 vearly OP-41
meff O-2 plwnfc M-155 pwcgdo M-136 vfb M-22
mos_region OP-59 plwphib M-31 pwcgidl M-127 vfbov M-111
mult I-1 plwsdibl M-65 pwcgso M-140 vgs OP-7
nf I-4 plwssf M-73 pwcox M-132 vgt OP-12
ngcon I-5 plwta1 M-196 pwetamob M-46 von OP-52
nt M-143 plwtbgidl M-200 pwigacc M-105 vp M-78
nu M-180 plwtetabet M-167 pwiginv M-97 vsat OP-14
paramchk M-2 plwtetamob M-179 pwigov M-115 vsb OP-8
pla1 M-84 plwtetaph M-175 pwko M-25 vth OP-11
pla2 M-88 plwtetar M-188 pwmexp M-81 vto OP-9
pla3 M-92 plwtetasat M-192 pwmo M-68 vts OP-10
plagidl M-118 plwtetasr M-171 pwnfa M-146 w I-3
plalp M-75 plwtheph M-43 pwnfb M-150 weff OP-36
plbacc M-108 plwther M-51 pwnfc M-154 wmax M-21
plbet M-33 plwthesat M-57 pwphib M-30 wmin M-20
plbgidl M-122 plwthesr M-39 pwr OP-58 wot M-16
plbinv M-100 plwtheth M-61 pwsdibl M-64 wvar M-15
plcgdo M-135 plwtnuexp M-184 pwssf M-72 xgw I-6
plcgidl M-126 plwtphib M-163 pwta1 M-195 xpart M-207
plcgso M-139 plwtvfb M-159 pwtbgidl M-199

MOS Model 11, Level 1101 (mos1101e)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos1101e parameter=value ...

Model Parameters

1

level=1.1e+03

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

tr=21 C

Reference temperature.

7

vfb=-1.05 V

Flat-band voltage at reference temperature.

8

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

9

ko=0.5 V

Body-effect factor.

10

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

11

phib=0.95 V

Surface potential at the onset of strong inversion.

12

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

13

bet=0.00192(n)/0.000381(p) A/V2

Gain factor.

14

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

15

thesr=0.356(n)/0.73(p) 1/V

Mobility degradation parameter due to surface roughness scattering.

16

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

17

theph=0.0129(n)/0.001(p) 1/V

Mobility degradation parameter due to phonon scattering.

18

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

19

etamob=1.4(n)/3(p)

Effective field parameter for dependence on depletion charge.

20

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

21

nu=2

Exponent of field dependence of mobility model.

22

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

23

ther=0.0812(n)/0.079(p) 1/V

Coefficient of series resistance.

24

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

25

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

26

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

27

thesat=0.251(n)/0.173(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

28

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

29

theth=1e-05(n)/0(p) 1/V3

Coefficient of self-heating.

30

sdibl=0.000853(n)/3.55e-05(p) 1/V

Drain-induced barrier lowering parameter.

31

mo=0

Parameter for (short-channel) subthreshold slope.

32

ssf=0.012(n)/0.01(p) 1/V

Static-feedback parameter.

33

alp=0.025

Factor of channel length modulation.

34

vp=0.05 V

Characteristic voltage of channel-length modulation.

35

mexp=5

Smoothing factor.

36

a1=6.02(n)/6.86(p)

Factor of the weak-avalanche current.

37

sta1=0 1/K

Coefficient of the temperature dependence of A1.

38

a2=38(n)/57.3(p) V

Exponent of the weak-avalanche current.

39

a3=0.641(n)/0.425(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

40

iginv=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

41

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

42

igacc=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

43

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

44

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

45

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

46

igov=0 A/V2

Gain factor for Source/Drain overlap tunneling current.

47

agidl=0 A/V3

Gain factor for gate-induced leakage current.

48

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

49

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

50

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

51

cox=2.98e-14(n)/2.72e-14(p) F

Oxide capacitance for the intrinsic channel (* mult).

52

cgdo=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-drain overlap (* mult).

53

cgso=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-source overlap (* mult).

54

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

55

nt=1.62e-20 J

Thermal noise coefficient.

56

nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)

First coefficient of the flicker noise.

57

nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)

Second coefficient of the flicker noise.

58

nfc=0(n)/3.63e-10(p) 1/V

Third coefficient of the flicker noise.

59

tox=3.2e-09 m

Thickness of gate oxide layer.

60

dta=0 K

Temperature offset of the device.

61

rg=0

Gate resistance.

62

binning=0

Flag for eldo model.

63

type=n

Transistor gender. Possible values are n and p.

64

imax=1000 A

Explosion current.

65

tnom (C)

Alias of tnom.

66

tref (C)

Alias of tnom.

67

simkitver=3.4

68

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

rg ()

Gate resistance.

37

u

Transistor gain (gm/gds).

38

rout ()

Small-signal output resistance (1/gds).

39

vearly (V)

Equivalent Early voltage (|id|/gds).

40

keff (V )

Body effect parameter.

41

beff (A/V2)

Gain factor.

42

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

43

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

44

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

45

fknee (Hz)

Cross-over frequency above which white noise is dominant.

46

ctype

Channel type (-1 for PMOS, +1 for NMOS).

47

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

48

table_ids (A)

Current.

49

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

50

table_qg (Coul)

Charge at g node.

51

table_qd (Coul)

Charge at d node.

52

table_qb (Coul)

Charge at b node.

53

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

54

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1 M-43 ctype OP-46 nfa M-63 thesat M-34
a2 M-45 diode_region OP-54 nfb M-64 thesr M-22
a3 M-46 dta M-67 nfc M-65 theth M-36
agidl M-54 etabet M-21 nt M-62 tmin M-10
alp M-40 etamob M-26 nu M-28 tnom M-72
bacc M-50 etaph M-25 nuexp M-29 tox M-66
beff OP-41 etar M-31 paramchk M-2 tr M-13
bet M-20 etasat M-35 phib M-18 tref M-73
bgidl M-55 etasr M-23 printscaled I-2 trise I-3
binning M-70 fknee OP-45 region I-4 type M-71
binv M-48 fug OP-42 rg M-68 u OP-37
cbb OP-33 gatenoise M-61 rg OP-36 vballmsg M-9
cbd OP-30 gds OP-17 rout OP-38 vbdbhigh M-6
cbg OP-31 gm OP-15 sdibl M-37 vbdblow M-5
cbs OP-32 gmb OP-16 sqrtsff OP-44 vbds M-4
cdb OP-21 iavl OP-2 sqrtsfw OP-43 vbox M-3
cdd OP-18 ids OP-1 ssf M-39 vbsbhigh M-8
cdg OP-19 igacc M-49 sta1 M-44 vbsblow M-7
cds OP-20 igb OP-5 stbgidl M-56 vds OP-6
cgb OP-25 igd OP-4 stetamob M-27 vdss OP-13
cgd OP-22 iginv M-47 stop M-12 vearly OP-39
cgdo M-59 igov M-53 stphib M-19 vfb M-14
cgdol OP-34 igs OP-3 stvfb M-15 vfbov M-51
cgg OP-23 keff OP-40 table_ids OP-48 vgs OP-7
cgidl M-57 ko M-16 table_qb OP-52 vgt OP-12
cgs OP-24 kov M-52 table_qd OP-51 von OP-47
cgso M-60 kpinv M-17 table_qg OP-50 vp M-41
cgsol OP-35 level M-1 table_vth OP-49 vsat OP-14
compatible M-74 m I-5 tdelay M-11 vsb OP-8
cox M-58 meff O-2 tempeff O-1 vth OP-11
csb OP-29 mexp M-42 theph M-24 vto OP-9
csd OP-26 mo M-38 ther M-30 vts OP-10
csg OP-27 mos_region OP-53 ther1 M-32 xpart M-69
css OP-28 mult I-1 ther2 M-33

MOS Model 11, Level 1101 (mos1101et)

This is SimKit 4.3.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos1101et parameter=value ...

Model Parameters

1

level=1.1e+03

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

tr=21 C

Reference temperature.

7

vfb=-1.05 V

Flat-band voltage at reference temperature.

8

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

9

ko=0.5 V

Body-effect factor.

10

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

11

phib=0.95 V

Surface potential at the onset of strong inversion.

12

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

13

bet=0.00192(n)/0.000381(p) A/V2

Gain factor.

14

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

15

thesr=0.356(n)/0.73(p) 1/V

Mobility degradation parameter due to surface roughness scattering.

16

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

17

theph=0.0129(n)/0.001(p) 1/V

Mobility degradation parameter due to phonon scattering.

18

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

19

etamob=1.4(n)/3(p)

Effective field parameter for dependence on depletion charge.

20

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

21

nu=2

Exponent of field dependence of mobility model.

22

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

23

ther=0.0812(n)/0.079(p) 1/V

Coefficient of series resistance.

24

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

25

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

26

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

27

thesat=0.251(n)/0.173(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

28

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

29

theth=1e-05(n)/0(p) 1/V3

Coefficient of self-heating.

30

sdibl=0.000853(n)/3.55e-05(p) 1/V

Drain-induced barrier lowering parameter.

31

mo=0

Parameter for (short-channel) subthreshold slope.

32

ssf=0.012(n)/0.01(p) 1/V

Static-feedback parameter.

33

alp=0.025

Factor of channel length modulation.

34

vp=0.05 V

Characteristic voltage of channel-length modulation.

35

mexp=5

Smoothing factor.

36

a1=6.02(n)/6.86(p)

Factor of the weak-avalanche current.

37

sta1=0 1/K

Coefficient of the temperature dependence of A1.

38

a2=38(n)/57.3(p) V

Exponent of the weak-avalanche current.

39

a3=0.641(n)/0.425(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

40

iginv=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

41

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

42

igacc=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

43

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

44

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

45

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

46

igov=0 A/V2

Gain factor for Source/Drain overlap tunneling current.

47

agidl=0 A/V3

Gain factor for gate-induced leakage current.

48

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

49

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

50

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

51

cox=2.98e-14(n)/2.72e-14(p) F

Oxide capacitance for the intrinsic channel (* mult).

52

cgdo=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-drain overlap (* mult).

53

cgso=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-source overlap (* mult).

54

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

55

nt=1.62e-20 J

Thermal noise coefficient.

56

nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)

First coefficient of the flicker noise.

57

nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)

Second coefficient of the flicker noise.

58

nfc=0(n)/3.63e-10(p) 1/V

Third coefficient of the flicker noise.

59

tox=3.2e-09 m

Thickness of gate oxide layer.

60

dta=0 K

Temperature offset of the device.

61

rg=0

Gate resistance.

62

rth=300 K/W

Thermal resistance.

63

cth=3e-09 J/K

Thermal capacitance.

64

ath=0

Temperature coefficient of the thermal resistance.

65

binning=0

Flag for eldo model.

66

type=n

Transistor gender. Possible values are n and p.

67

imax=1000 A

Explosion current.

68

tnom (C)

Alias of tnom.

69

tref (C)

Alias of tnom.

70

simkitver=3.4

71

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1  

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

rg ()

Gate resistance.

37

u

Transistor gain (gm/gds).

38

rout ()

Small-signal output resistance (1/gds).

39

vearly (V)

Equivalent Early voltage (|id|/gds).

40

keff (V )

Body effect parameter.

41

beff (A/V2)

Gain factor.

42

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

43

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

44

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

45

fknee (Hz)

Cross-over frequency above which white noise is dominant.

46

ctype

Channel type (-1 for PMOS, +1 for NMOS).

47

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

48

Pdiss (W)

Dissipation.

49

TK (K)

Actual device temperature.

50

table_ids (A)

Current.

51

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

52

table_qg (Coul)

Charge at g node.

53

table_qd (Coul)

Charge at d node.

54

table_qb (Coul)

Charge at b node.

55

pwr (W)

Power.

56

mos_region

MOS region.
Possible values are off, sat, triode,  and subth

57

diode_region

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-46 css OP-28 nfa M-63 thesat M-34
TK OP-47 cth M-71 nfb M-64 thesr M-22
a1 M-43 ctype OP-48 nfc M-65 theth M-36
a2 M-45 diode_region OP-57 nt M-62 tmin M-10
a3 M-46 dta M-67 nu M-28 tnom M-75
agidl M-54 etabet M-21 nuexp M-29 tox M-66
alp M-40 etamob M-26 paramchk M-2 tr M-13
ath M-72 etaph M-25 phib M-18 tref M-76
bacc M-50 etar M-31 printscaled I-2 trise I-3
beff OP-41 etasat M-35 pwr OP-55 type M-74
bet M-20 etasr M-23 region I-4 u OP-37
bgidl M-55 fknee OP-45 rg M-68 vballmsg M-9
binning M-73 fug OP-42 rg OP-36 vbdbhigh M-6
binv M-48 gatenoise M-61 rout OP-38 vbdblow M-5
cbb OP-33 gds OP-17 rth M-70 vbds M-4
cbd OP-30 gm OP-15 sdibl M-37 vbox M-3
cbg OP-31 gmb OP-16 sqrtsff OP-44 vbsbhigh M-8
cbs OP-32 iavl OP-2 sqrtsfw OP-43 vbsblow M-7
cdb OP-21 ids OP-1 ssf M-39 vds OP-6
cdd OP-18 igacc M-49 sta1 M-44 vdss OP-13
cdg OP-19 igb OP-5 stbgidl M-56 vearly OP-39
cds OP-20 igd OP-4 stetamob M-27 vfb M-14
cgb OP-25 iginv M-47 stop M-12 vfbov M-51
cgd OP-22 igov M-53 stphib M-19 vgs OP-7
cgdo M-59 igs OP-3 stvfb M-15 vgt OP-12
cgdol OP-34 keff OP-40 table_ids OP-50 von OP-49
cgg OP-23 ko M-16 table_qb OP-54 vp M-41
cgidl M-57 kov M-52 table_qd OP-53 vsat OP-14
cgs OP-24 kpinv M-17 table_qg OP-52 vsb OP-8
cgso M-60 level M-1 table_vth OP-51 vth OP-11
cgsol OP-35 m I-5 tdelay M-11 vto OP-9
compatible M-77 meff O-2 tempeff O-1 vts OP-10
cox M-58 mexp M-42 theph M-24 xpart M-69
csb OP-29 mo M-38 ther M-30
csd OP-26 mos_region OP-56 ther1 M-32
csg OP-27 mult I-1 ther2 M-33

MOS Model 11, Level 1102 (mos11020)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11020 parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

vfb=-1.05 V

Flat-band voltage at reference temperature.

12

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

13

kor=0.5 V

Body effect coefficient for the reference transistor.

14

slko=0

Coefficient of the length dependence of KO.

15

sl2ko=0

Second coefficient of the length dependence of KO.

16

sl3ko=0

Third coefficient of the length dependence of KO.

17

sl3koexp=1

Exponent belonging to the third coefficient of the length dependence of KO.

18

swko=0

Coefficient of the width dependence of KO.

19

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

20

phibr=0.95 V

Surface potential at strong inversion.

21

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

22

slphib=0

Coefficient of the length dependence of PHIB.

23

sl2phib=0

Second coefficient of the length dependence of PHIB.

24

swphib=0

Coefficient of the width dependence of PHIB.

25

betsq=0.000371(n)/0.000115(p) A/V2

Gain factor for an infinite square transistor.

26

etabetr=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

27

sletabet=0

Coefficient of length dependence of ETABETR.

28

fbet1=0

Relative mobility decrease due to first lateral profile.

29

lp1=8e-07 m

Characteristic length of first lateral profile.

30

fbet2=0

Relative mobility decrease due to second lateral profile.

31

lp2=8e-07 m

Characteristic length of second lateral profile.

32

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

33

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

34

swthesr=0

Coefficient of the width dependence of THESR.

35

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

36

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

37

swtheph=0

Coefficient of the width dependence of THEPH.

38

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

39

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

40

swetamob=0

Coefficient of the width dependence of ETAMOB.

41

nu=2

Exponent of field dependence of mobility model.

42

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

43

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

44

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

45

swther=0

Coefficient of the width dependence of THER.

46

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

47

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

48

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

49

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

50

slthesat=1

Coefficient of length dependence of THESAT.

51

thesatexp=1

Exponent of length dependence of THESAT.

52

swthesat=0

Coefficient of the width dependence of THESAT.

53

thethr=0.001(n)/0.0005(p) 1/V3

Coefficient of self-heating.

54

thethexp=1

Exponent of the length dependence of THETH.

55

swtheth=0

Coefficient of the width dependence of THETH.

56

sdiblo=0.0001 1/V

Drain-induced barrier lowering parameter.

57

sdiblexp=1.35

Exponent of the length dependence of SDIBL.

58

moo=0

Parameter for short-channel subthreshold slope.

59

mor=0

Parameter for short-channel subthreshold slope per unit length.

60

moexp=1.34

Exponent of the length dependence of MO.

61

ssfr=0.00625 1/V

Static feedback parameter.

62

slssf=1

Coefficient of the length dependence of SSF.

63

swssf=0

Coefficient of the width dependence of SSF.

64

alpr=0.01

Factor of the channel length modulation.

65

slalp=1

Coefficient of the length dependence of ALP.

66

alpexp=1

Exponent of the length dependence of ALP.

67

swalp=0

Coefficient of the width dependence of ALP.

68

vp=0.05 V

Characteristic voltage of channel-length modulation.

69

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

70

a1r=6

Factor of the weak-avalanche current.

71

sta1=0 1/K

Coefficient of the temperature dependence of A1.

72

sla1=0

Coefficient of the length dependence of A1.

73

swa1=0

Coefficient of the width dependence of A1.

74

a2r=38 V

Exponent of the weak-avalanche current.

75

sla2=0

Coefficient of the length dependence of A2.

76

swa2=0

Coefficient of the width dependence of A2.

77

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

78

sla3=0

Coefficient of the length dependence of A3.

79

swa3=0

Coefficient of the width dependence of A3.

80

iginvr=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

81

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

82

igaccr=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

83

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

84

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

85

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

86

igovr=0 A/V2

Gain factor for Source/Drain overlap gate tunneling current.

87

agidlr=0 A/V3

Gain factor for gate-induced leakage current.

88

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

89

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

90

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

91

tox=3.2e-09 m

Thickness of gate oxide layer.

92

col=3.2e-16 F

Gate overlap capacitance for a channel width of 1 um.

93

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

94

nt=1.62e-20 J

Thermal noise coefficient.

95

nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)

First coefficient of the flicker noise for a channel area of 1 um^2.

96

nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)

Second coefficient of the flicker noise for a channel area of 1 um^2.

97

nfcr=0(n)/7.3e-08(p) 1/V

Third coefficient of the flicker noise for a channel area of 1 um^2.

98

dta=0 K

Temperature offset of the device.

99

csr=0

Factor of the Coulomb scattering.

100

slcs=0

Coefficient of the length dependence of CS.

101

csexp=1

Exponent of the length dependence of CS.

102

swcs=0

Coefficient of the width dependence of CS.

103

etacs=0

Exponent of the temperature dependence of CS.

104

rgo=0

Gate resistance.

105

rint=0 m2

Contact resistance between silicide and poly.

106

rvpoly=0 m2

Vertical poly resistance.

107

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

108

dlsil=0 m

Silicide extension over the physical gate length.

109

scalelev=1.1e+04

flag for eldo model.

110

type=n

Transistor gender. Possible values are n and p.

111

imax=1000 A

Explosion current.

112

mbeo=0.0

DCmatch parameter.

113

mvto=0.0

Threshold mismatch intercept.

114

tnom (C)

alias of tnom.

115

tref (C)

alias of tnom.

116

simkitver=3.4

117

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

table_ids (A)

Current.

49

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

50

table_qg (Coul)

Charge at g node.

51

table_qd (Coul)

Charge at d node.

52

table_qb (Coul)

Charge at b node.

53

ctype

Channel type (-1 for PMOS, +1 for NMOS).

54

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

55

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

56

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1r M-77 fug OP-44 rint M-112 table_vth OP-49
a2r M-81 gatenoise M-100 rout OP-40 tdelay M-11
a3r M-84 gds OP-17 rshg M-114 tempeff O-1
agidlr M-94 gm OP-15 rvpoly M-113 thephr M-42
alpexp M-73 gmb OP-16 scalelev M-116 ther1 M-53
alpr M-71 iavl OP-2 sdiblexp M-64 ther2 M-54
bacc M-90 ids OP-1 sdiblo M-63 therr M-50
beff OP-43 igaccr M-89 sl2ko M-22 thesatexp M-58
betsq M-32 igb OP-5 sl2phib M-30 thesatr M-55
bgidl M-95 igd OP-4 sl3ko M-23 thesrr M-39
binv M-88 iginvr M-87 sl3koexp M-24 thethexp M-61
cbb OP-33 igovr M-93 sla1 M-79 thethr M-60
cbd OP-30 igs OP-3 sla2 M-82 tmin M-10
cbg OP-31 keff OP-42 sla3 M-85 tnom M-120
cbs OP-32 kor M-20 slalp M-72 tox M-98
cdb OP-21 kov M-92 slcs M-107 tr M-17
cdd OP-18 kpinv M-26 sletabet M-34 tref M-121
cdg OP-19 l I-2 slko M-21 trise I-8
cds OP-20 lap M-14 slphib M-29 type M-117
cgb OP-25 leff OP-37 slssf M-69 u OP-39
cgd OP-22 level M-1 slthesat M-57 vballmsg M-9
cgdol OP-34 lmin M-76 sqrtsff OP-46 vbdbhigh M-6
cgg OP-23 lp1 M-36 sqrtsfw OP-45 vbdblow M-5
cgidl M-97 lp2 M-38 ssfr M-68 vbds M-4
cgs OP-24 lvar M-13 sta1 M-78 vbox M-3
cgsol OP-35 m I-10 stbgidl M-96 vbsbhigh M-8
col M-99 mbeo M-118 stetamob M-46 vbsblow M-7
compatible M-122 meff O-2 stop M-12 vds OP-6
csb OP-29 moexp M-67 stphib M-28 vdss OP-13
csd OP-26 moo M-65 stvfb M-19 vearly OP-41
csexp M-108 mor M-66 swa1 M-80 vfb M-18
csg OP-27 mos_region OP-55 swa2 M-83 vfbov M-91
csr M-106 mult I-1 swa3 M-86 vgs OP-7
css OP-28 mvto M-119 swalp M-74 vgt OP-12
ctype OP-53 nf I-4 swcs M-109 von OP-54
diode_region OP-56 nfar M-102 swetamob M-47 vp M-75
dlsil M-115 nfbr M-103 swko M-25 vsat OP-14
dta M-105 nfcr M-104 swphib M-31 vsb OP-8
etabetr M-33 ngcon I-5 swssf M-70 vth OP-11
etacs M-110 nt M-101 swtheph M-44 vto OP-9
etamobr M-45 nu M-48 swther M-52 vts OP-10
etaph M-43 nuexp M-49 swthesat M-59 w I-3
etar M-51 paramchk M-2 swthesr M-41 weff OP-36
etasat M-56 phibr M-27 swtheth M-62 wot M-16
etasr M-40 printscaled I-7 table_ids OP-48 wvar M-15
fbet1 M-35 region I-9 table_qb OP-52 xgw I-6
fbet2 M-37 rg OP-38 table_qd OP-51
fknee OP-47 rgo M-111 table_qg OP-50

MOS Model 11, Level 1102 (mos11020t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

Alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11020t parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

vfb=-1.05 V

Flat-band voltage at reference temperature.

12

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

13

kor=0.5 V

Body effect coefficient for the reference transistor.

14

slko=0

Coefficient of the length dependence of KO.

15

sl2ko=0

Second coefficient of the length dependence of KO.

16

sl3ko=0

Third coefficient of the length dependence of KO.

17

sl3koexp=1

Exponent belonging to the third coefficient of the length dependence of KO.

18

swko=0

Coefficient of the width dependence of KO.

19

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

20

phibr=0.95 V

Surface potential at strong inversion.

21

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

22

slphib=0

Coefficient of the length dependence of PHIB.

23

sl2phib=0

Second coefficient of the length dependence of PHIB.

24

swphib=0

Coefficient of the width dependence of PHIB.

25

betsq=0.000371(n)/0.000115(p) A/V2

Gain factor for an infinite square transistor.

26

etabetr=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

27

sletabet=0

Coefficient of length dependence of ETABETR.

28

fbet1=0

Relative mobility decrease due to first lateral profile.

29

lp1=8e-07 m

Characteristic length of first lateral profile.

30

fbet2=0

Relative mobility decrease due to second lateral profile.

31

lp2=8e-07 m

Characteristic length of second lateral profile.

32

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

33

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

34

swthesr=0

Coefficient of the width dependence of THESR.

35

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

36

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

37

swtheph=0

Coefficient of the width dependence of THEPH.

38

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

39

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

40

swetamob=0

Coefficient of the width dependence of ETAMOB.

41

nu=2

Exponent of field dependence of mobility model.

42

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

43

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

44

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

45

swther=0

Coefficient of the width dependence of THER.

46

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

47

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

48

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

49

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

50

slthesat=1

Coefficient of length dependence of THESAT.

51

thesatexp=1

Exponent of length dependence of THESAT.

52

swthesat=0

Coefficient of the width dependence of THESAT.

53

thethr=0.001(n)/0.0005(p) 1/V3

Coefficient of self-heating.

54

thethexp=1

Exponent of the length dependence of THETH.

55

swtheth=0

Coefficient of the width dependence of THETH.

56

sdiblo=0.0001 1/V

Drain-induced barrier lowering parameter.

57

sdiblexp=1.35

Exponent of the length dependence of SDIBL.

58

moo=0

Parameter for short-channel subthreshold slope.

59

mor=0

Parameter for short-channel subthreshold slope per unit length.

60

moexp=1.34

Exponent of the length dependence of MO.

61

ssfr=0.00625 1/V

Static feedback parameter.

62

slssf=1

Coefficient of the length dependence of SSF.

63

swssf=0

Coefficient of the width dependence of SSF.

64

alpr=0.01

Factor of the channel length modulation.

65

slalp=1

Coefficient of the length dependence of ALP.

66

alpexp=1

Exponent of the length dependence of ALP.

67

swalp=0

Coefficient of the width dependence of ALP.

68

vp=0.05 V

Characteristic voltage of channel-length modulation.

69

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

70

a1r=6

Factor of the weak-avalanche current.

71

sta1=0 1/K

Coefficient of the temperature dependence of A1.

72

sla1=0

Coefficient of the length dependence of A1.

73

swa1=0

Coefficient of the width dependence of A1.

74

a2r=38 V

Exponent of the weak-avalanche current.

75

sla2=0

Coefficient of the length dependence of A2.

76

swa2=0

Coefficient of the width dependence of A2.

77

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

78

sla3=0

Coefficient of the length dependence of A3.

79

swa3=0

Coefficient of the width dependence of A3.

80

iginvr=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

81

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

82

igaccr=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

83

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

84

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

85

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

86

igovr=0 A/V2

Gain factor for Source/Drain overlap gate tunneling current.

87

agidlr=0 A/V3

Gain factor for gate-induced leakage current.

88

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

89

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

90

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

91

tox=3.2e-09 m

Thickness of gate oxide layer.

92

col=3.2e-16 F

Gate overlap capacitance for a channel width of 1 um.

93

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

94

nt=1.62e-20 J

Thermal noise coefficient.

95

nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)

First coefficient of the flicker noise for a channel area of 1 um^2.

96

nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)

Second coefficient of the flicker noise for a channel area of 1 um^2.

97

nfcr=0(n)/7.3e-08(p) 1/V

Third coefficient of the flicker noise for a channel area of 1 um^2.

98

dta=0 K

Temperature offset of the device.

99

csr=0

Factor of the Coulomb scattering.

100

slcs=0

Coefficient of the length dependence of CS.

101

csexp=1

Exponent of the length dependence of CS.

102

swcs=0

Coefficient of the width dependence of CS.

103

etacs=0

Exponent of the temperature dependence of CS.

104

rgo=0

Gate resistance.

105

rint=0 m2

Contact resistance between silicide and poly.

106

rvpoly=0 m2

Vertical poly resistance.

107

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

108

dlsil=0 m

Silicide extension over the physical gate length.

109

rth=300 K/W

Thermal resistance.

110

cth=3e-09 J/K

Thermal capacitance.

111

ath=0

Temperature coefficient of the thermal resistance.

112

scalelev=1.1e+04

flag for eldo model.

113

type=n

Transistor gender. Possible values are n and p.

114

imax=1000 A

Explosion current.

115

mbeo=0.0

DCmatch parameter.

116

mvto=0.0

Threshold mismatch intercept.

117

tnom (C)

Alias of tnom.

118

tref (C)

Alias of tnom.

119

simkitver=3.4

120

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

Pdiss (W)

Dissipation.

49

TK (K)

Actual device temperature.

50

table_ids (A)

Current.

51

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

52

table_qg (Coul)

Charge at g node.

53

table_qd (Coul)

Charge at d node.

54

table_qb (Coul)

Charge at b node.

55

ctype

Channel type (-1 for PMOS, +1 for NMOS).

56

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

57

pwr (W)

Power.

58

mos_region

MOS region.
Possible values are off, sat, triode,  and subth

59

diode_region

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-48 fbet1 M-35 region I-9 table_qb OP-54
TK OP-49 fbet2 M-37 rg OP-38 table_qd OP-53
a1r M-77 fknee OP-47 rgo M-111 table_qg OP-52
a2r M-81 fug OP-44 rint M-112 table_vth OP-51
a3r M-84 gatenoise M-100 rout OP-40 tdelay M-11
agidlr M-94 gds OP-17 rshg M-114 tempeff O-1
alpexp M-73 gm OP-15 rth M-116 thephr M-42
alpr M-71 gmb OP-16 rvpoly M-113 ther1 M-53
ath M-118 iavl OP-2 scalelev M-119 ther2 M-54
bacc M-90 ids OP-1 sdiblexp M-64 therr M-50
beff OP-43 igaccr M-89 sdiblo M-63 thesatexp M-58
betsq M-32 igb OP-5 sl2ko M-22 thesatr M-55
bgidl M-95 igd OP-4 sl2phib M-30 thesrr M-39
binv M-88 iginvr M-87 sl3ko M-23 thethexp M-61
cbb OP-33 igovr M-93 sl3koexp M-24 thethr M-60
cbd OP-30 igs OP-3 sla1 M-79 tmin M-10
cbg OP-31 keff OP-42 sla2 M-82 tnom M-123
cbs OP-32 kor M-20 sla3 M-85 tox M-98
cdb OP-21 kov M-92 slalp M-72 tr M-17
cdd OP-18 kpinv M-26 slcs M-107 tref M-124
cdg OP-19 l I-2 sletabet M-34 trise I-8
cds OP-20 lap M-14 slko M-21 type M-120
cgb OP-25 leff OP-37 slphib M-29 u OP-39
cgd OP-22 level M-1 slssf M-69 vballmsg M-9
cgdol OP-34 lmin M-76 slthesat M-57 vbdbhigh M-6
cgg OP-23 lp1 M-36 sqrtsff OP-46 vbdblow M-5
cgidl M-97 lp2 M-38 sqrtsfw OP-45 vbds M-4
cgs OP-24 lvar M-13 ssfr M-68 vbox M-3
cgsol OP-35 m I-10 sta1 M-78 vbsbhigh M-8
col M-99 mbeo M-121 stbgidl M-96 vbsblow M-7
compatible M-125 meff O-2 stetamob M-46 vds OP-6
csb OP-29 moexp M-67 stop M-12 vdss OP-13
csd OP-26 moo M-65 stphib M-28 vearly OP-41
csexp M-108 mor M-66 stvfb M-19 vfb M-18
csg OP-27 mos_region OP-58 swa1 M-80 vfbov M-91
csr M-106 mult I-1 swa2 M-83 vgs OP-7
css OP-28 mvto M-122 swa3 M-86 vgt OP-12
cth M-117 nf I-4 swalp M-74 von OP-56
ctype OP-55 nfar M-102 swcs M-109 vp M-75
diode_region OP-59 nfbr M-103 swetamob M-47 vsat OP-14
dlsil M-115 nfcr M-104 swko M-25 vsb OP-8
dta M-105 ngcon I-5 swphib M-31 vth OP-11
etabetr M-33 nt M-101 swssf M-70 vto OP-9
etacs M-110 nu M-48 swtheph M-44 vts OP-10
etamobr M-45 nuexp M-49 swther M-52 w I-3
etaph M-43 paramchk M-2 swthesat M-59 weff OP-36
etar M-51 phibr M-27 swthesr M-41 wot M-16
etasat M-56 printscaled I-7 swtheth M-62 wvar M-15
etasr M-40 pwr OP-57 table_ids OP-50 xgw I-6

MOS Model 11, Level 1102 (mos11021)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11021 parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

lmin=0 m

Device length low limit for binning selection.

12

lmax=1 m

Device length high limit for binning selection.

13

wmin=0 m

Device width low limit for binning selection.

14

wmax=1 m

Device width high limit for binning selection.

15

vfb=-1.05 V

Flat-band voltage at reference temperature.

16

poko=0.5 V

Coefficient for the geometry independent part of KO.

17

plko=0 V

Coefficient for the length dependence of KO.

18

pwko=0 V

Coefficient for the width dependence of KO.

19

plwko=0 V

Coefficient for the length times width dependence of KO.

20

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

21

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

22

plphib=0 V

Coefficient for the length dependence of PHIB.

23

pwphib=0 V

Coefficient for the width dependence of PHIB.

24

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

25

pobet=0.00192(n)/0.000381(p) A/V2

Coefficient for the geometry independent part of BET.

26

plbet=0 A/V2

Coefficient for the length dependence of BET.

27

pwbet=0 A/V2

Coefficient for the width dependence of BET.

28

plwbet=0 A/V2

Coefficient for the width over length dependence of BET.

29

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry independent part of THESR.

30

plthesr=0 1/V

Coefficient of the length dependence of THESR.

31

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

32

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

33

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry independent part of THEPH.

34

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

35

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

36

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

37

poetamob=1.4(n)/3(p)

Coefficient of the geometry independent part of ETAMOB.

38

pletamob=0

Coefficient of the length dependence of ETAMOB.

39

pwetamob=0

Coefficient of the width dependence of ETAMOB.

40

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

41

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry independent part of THER.

42

plther=0 1/V

Coefficient of the length dependence of THER.

43

pwther=0 1/V

Coefficient of the width dependence of THER.

44

plwther=0 1/V

Coefficient of the length times width dependence of THER.

45

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

46

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

47

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry independent part of THESAT.

48

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

49

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

50

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

51

potheth=1e-05(n)/0(p) 1/V3

Coefficient of the geometry independent part of THETH.

52

pltheth=0 1/V3

Coefficient of the length dependence of THETH.

53

pwtheth=0 1/V3

Coefficient of the width dependence of THETH.

54

plwtheth=0 1/V3

Coefficient of the length times width dependence of THETH.

55

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry independent part of SDIBL.

56

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

57

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

58

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

59

pomo=0

Coefficient of the geometry independent part of MO.

60

plmo=0

Coefficient of the length dependence of MO.

61

pwmo=0

Coefficient of the width dependence of MO.

62

plwmo=0

Coefficient of the length times width dependence of MO.

63

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry independent part of SSF.

64

plssf=0 1/V

Coefficient of the length dependence of SSF.

65

pwssf=0 1/V

Coefficient of the width dependence of SSF.

66

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

67

poalp=0.025

Coefficient of the geometry independent part of ALP.

68

plalp=0

Coefficient of the length dependence of ALP.

69

pwalp=0

Coefficient of the width dependence of ALP.

70

plwalp=0

Coefficient of the length times width dependence of ALP.

71

vp=0.05 V

Characteristic voltage of channel-length modulation.

72

pomexp=0.2

Coefficient of the geometry independent part of MEXP.

73

plmexp=0

Coefficient of the length dependence of MEXP.

74

pwmexp=0

Coefficient of the width dependence of MEXP.

75

plwmexp=0

Coefficient of the length times width dependence of MEXP.

76

poa1=6.02(n)/6.86(p)

Coefficient of the geometry independent part of A1.

77

pla1=0

Coefficient of the length dependence of A1.

78

pwa1=0

Coefficient of the width dependence of A1.

79

plwa1=0

Coefficient of the length times width dependence of A1.

80

poa2=38(n)/57.3(p) V

Coefficient of the geometry independent part of A2.

81

pla2=0 V

Coefficient of the length dependence of A2.

82

pwa2=0 V

Coefficient of the width dependence of A2.

83

plwa2=0 V

Coefficient of the length times width dependence of A2.

84

poa3=0.641(n)/0.425(p)

Coefficient of the geometry independent part of A3.

85

pla3=0

Coefficient of the length dependence of A3.

86

pwa3=0

Coefficient of the width dependence of A3.

87

plwa3=0

Coefficient of the length times width dependence of A3.

88

poiginv=0 A/V2

Coefficient of the geometry independent part of IGINV.

89

pliginv=0 A/V2

Coefficient of the length dependence of IGINV.

90

pwiginv=0 A/V2

Coefficient of the width dependence of IGINV.

91

plwiginv=0 A/V2

Coefficient of the length times width dependence of IGINV.

92

pobinv=48(n)/87.5(p) V

Coefficient of the geometry independent part of BINV.

93

plbinv=0 V

Coefficient of the length dependence of BINV.

94

pwbinv=0 V

Coefficient of the width dependence of BINV.

95

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

96

poigacc=0 A/V2

Coefficient of the geometry independent part of IGACC.

97

pligacc=0 A/V2

Coefficient of the length dependence of IGACC.

98

pwigacc=0 A/V2

Coefficient of the width dependence of IGACC.

99

plwigacc=0 A/V2

Coefficient of the length times width dependence of IGACC.

100

pobacc=48 V

Coefficient of the geometry independent part of BACC.

101

plbacc=0 V

Coefficient of the length dependence of BACC.

102

pwbacc=0 V

Coefficient of the width dependence of BACC.

103

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

104

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

105

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

106

poigov=0 A/V2

Coefficient of the geometry independent part of IGOV.

107

pligov=0 A/V2

Coefficient of the length dependence of IGOV.

108

pwigov=0 A/V2

Coefficient of the width dependence of IGOV.

109

plwigov=0 A/V2

Coefficient of the length times width dependence of IGOV.

110

poagidl=0 A/V3

Coefficient of the geometry independent part of AGIDL.

111

plagidl=0 A/V3

Coefficient of the length dependence of AGIDL.

112

pwagidl=0 A/V3

Coefficient of the width dependence of AGIDL.

113

plwagidl=0 A/V3

Coefficient of the length times width dependence of AGIDL.

114

pobgidl=41 V

Coefficient of the geometry independent part of BGIDL.

115

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

116

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

117

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

118

pocgidl=0

Coefficient of the geometry independent part of CGIDL.

119

plcgidl=0

Coefficient of the length dependence of CGIDL.

120

pwcgidl=0

Coefficient of the width dependence of CGIDL.

121

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

122

tox=3.2e-09 m

Thickness of gate oxide layer.

123

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry independent part of COX.

124

plcox=0 F

Coefficient of the length dependence of COX.

125

pwcox=0 F

Coefficient of the width dependence of COX.

126

plwcox=0 F

Coefficient of the length times width dependence of COX.

127

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGDO.

128

plcgdo=0 F

Coefficient of the length dependence of CGDO.

129

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

130

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

131

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGSO.

132

plcgso=0 F

Coefficient of the length dependence of CGSO.

133

pwcgso=0 F

Coefficient of the width dependence of CGSO.

134

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

135

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

136

nt=1.62e-20 J

Thermal noise coefficient.

137

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4

Coefficient of the geometry independent part of NFA.

138

plnfa=0 1/V m4

Coefficient of the length dependence of NFA.

139

pwnfa=0 1/V m4

Coefficient of the width dependence of NFA.

140

plwnfa=0 1/V m4

Coefficient of the length times width dependence of NFA.

141

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2

Coefficient of the geometry independent part of NFB.

142

plnfb=0 1/V m2

Coefficient of the length dependence of NFB.

143

pwnfb=0 1/V m2

Coefficient of the width dependence of NFB.

144

plwnfb=0 1/V m2

Coefficient of the length times width dependence of NFB.

145

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry independent part of NFC.

146

plnfc=0 1/V

Coefficient of the length dependence of NFC.

147

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

148

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

149

potvfb=0.0005 V/K

Coefficient of the geometry independent part of STVFB.

150

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

151

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

152

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

153

potphib=-0.00085 V/K

Coefficient of the geometry independent part of STPHIB.

154

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

155

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

156

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

157

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry independent part of ETABET.

158

pltetabet=0

Coefficient of the length dependence of ETABET.

159

pwtetabet=0

Coefficient of the width dependence of ETABET.

160

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

161

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry independent part of ETASR.

162

pltetasr=0

Coefficient of the length dependence of ETASR.

163

pwtetasr=0

Coefficient of the width dependence of ETASR.

164

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

165

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry independent part of ETAPH.

166

pltetaph=0

Coefficient of the length dependence of ETAPH.

167

pwtetaph=0

Coefficient of the width dependence of ETAPH.

168

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

169

potetamob=0 1/K

Coefficient of the geometry independent part of STETAMOB.

170

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

171

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

172

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

173

nu=2

Exponent of field dependence of mobility model.

174

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry independent part of NUEXP.

175

pltnuexp=0

Coefficient of the length dependence of NUEXP.

176

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

177

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

178

potetar=0.95(n)/0.4(p)

Coefficient of the geometry independent part of ETAR.

179

pltetar=0

Coefficient of the length dependence of ETAR.

180

pwtetar=0

Coefficient of the width dependence of ETAR.

181

plwtetar=0

Coefficient of the length times width dependence of ETAR.

182

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry independent part of ETASAT.

183

pltetasat=0

Coefficient of the length dependence of ETASAT.

184

pwtetasat=0

Coefficient of the width dependence of ETASAT.

185

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

186

pota1=0 1/K

Coefficient of the geometry independent part of STA1.

187

plta1=0 1/K

Coefficient of the length dependence of STA1.

188

pwta1=0 1/K

Coefficient of the width dependence of STA1.

189

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

190

potbgidl=-0.000364 V/K

Coefficient of the geometry independent part of STBGIDL.

191

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

192

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

193

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

194

dta=0 K

Temperature offset of the device.

195

pocs=0

Coefficient of the geometry independent part of CS.

196

plcs=0

Coefficient of the length dependence of CS.

197

pwcs=0

Coefficient of the width dependence of CS.

198

plwcs=0

Coefficient of the length times width dependence of CS.

199

potetacs=0

Coefficient of the geometry independent part of ETACS.

200

pltetacs=0

Coefficient of the length dependence of ETACS.

201

pwtetacs=0

Coefficient of the width dependence of ETACS.

202

plwtetacs=0

Coefficient of the length times width dependence of ETACS.

203

rgo=0

Gate resistance.

204

rint=0 m2

Contact resistance between silicide and poly.

205

rvpoly=0 m2

Vertical poly resistance.

206

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

207

dlsil=0 m

Silicide extension over the physical gate length.

208

scalelev=1.1e+04

flag for eldo model.

209

type=n

Transistor gender. Possible values are n and p.

210

imax=1000 A

Explosion current.

211

mbeo=0.0

DCmatch parameter.

212

mvto=0.0

Threshold mismatch intercept.

213

tnom (C)

Alias of tnom.

214

tref (C)

Alias of tnom.

215

simkitver=3.4

216

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

table_ids (A)

Current.

49

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

50

table_qg (Coul)

Charge at g node.

51

table_qd (Coul)

Charge at d node.

52

table_qb (Coul)

Charge at b node.

53

BET (A/V2)

Gain factor.

54

ctype

Channel type (-1 for PMOS, +1 for NMOS).

55

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

56

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

57

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BET OP-53 pliginv M-96 poa2 M-87 pwtetabet M-166
beff OP-43 pligov M-114 poa3 M-91 pwtetacs M-208
cbb OP-33 plko M-24 poagidl M-117 pwtetamob M-178
cbd OP-30 plmexp M-80 poalp M-74 pwtetaph M-174
cbg OP-31 plmo M-67 pobacc M-107 pwtetar M-187
cbs OP-32 plnfa M-145 pobet M-32 pwtetasat M-191
cdb OP-21 plnfb M-149 pobgidl M-121 pwtetasr M-170
cdd OP-18 plnfc M-153 pobinv M-99 pwtheph M-42
cdg OP-19 plphib M-29 pocgdo M-134 pwther M-50
cds OP-20 plsdibl M-63 pocgidl M-125 pwthesat M-56
cgb OP-25 plssf M-71 pocgso M-138 pwthesr M-38
cgd OP-22 plta1 M-194 pocox M-130 pwtheth M-60
cgdol OP-34 pltbgidl M-198 pocs M-202 pwtnuexp M-183
cgg OP-23 pltetabet M-165 poetamob M-44 pwtphib M-162
cgs OP-24 pltetacs M-207 poigacc M-103 pwtvfb M-158
cgsol OP-35 pltetamob M-177 poiginv M-95 region I-9
compatible M-221 pltetaph M-173 poigov M-113 rg OP-38
csb OP-29 pltetar M-186 poko M-23 rgo M-210
csd OP-26 pltetasat M-190 pomexp M-79 rint M-211
csg OP-27 pltetasr M-169 pomo M-66 rout OP-40
css OP-28 pltheph M-41 ponfa M-144 rshg M-213
ctype OP-54 plther M-49 ponfb M-148 rvpoly M-212
diode_region OP-57 plthesat M-55 ponfc M-152 scalelev M-215
dlsil M-214 plthesr M-37 pophib M-28 sqrtsff OP-46
dta M-201 pltheth M-59 posdibl M-62 sqrtsfw OP-45
fknee OP-47 pltnuexp M-182 possf M-70 stop M-12
fug OP-44 pltphib M-161 pota1 M-193 table_ids OP-48
gatenoise M-142 pltvfb M-157 potbgidl M-197 table_qb OP-52
gds OP-17 plwa1 M-86 potetabet M-164 table_qd OP-51
gm OP-15 plwa2 M-90 potetacs M-206 table_qg OP-50
gmb OP-16 plwa3 M-94 potetamob M-176 table_vth OP-49
iavl OP-2 plwagidl M-120 potetaph M-172 tdelay M-11
ids OP-1 plwalp M-77 potetar M-185 tempeff O-1
igb OP-5 plwbacc M-110 potetasat M-189 ther1 M-52
igd OP-4 plwbet M-35 potetasr M-168 ther2 M-53
igs OP-3 plwbgidl M-124 potheph M-40 tmin M-10
keff OP-42 plwbinv M-102 pother M-48 tnom M-219
kov M-112 plwcgdo M-137 pothesat M-54 tox M-129
kpinv M-27 plwcgidl M-128 pothesr M-36 tr M-17
l I-2 plwcgso M-141 potheth M-58 tref M-220
lap M-14 plwcox M-133 potnuexp M-181 trise I-8
leff OP-37 plwcs M-205 potphib M-160 type M-216
level M-1 plwetamob M-47 potvfb M-156 u OP-39
lmax M-19 plwigacc M-106 printscaled I-7 vballmsg M-9
lmin M-18 plwiginv M-98 pwa1 M-85 vbdbhigh M-6
lvar M-13 plwigov M-116 pwa2 M-89 vbdblow M-5
m I-10 plwko M-26 pwa3 M-93 vbds M-4
mbeo M-217 plwmexp M-82 pwagidl M-119 vbox M-3
meff O-2 plwmo M-69 pwalp M-76 vbsbhigh M-8
mos_region OP-56 plwnfa M-147 pwbacc M-109 vbsblow M-7
mult I-1 plwnfb M-151 pwbet M-34 vds OP-6
mvto M-218 plwnfc M-155 pwbgidl M-123 vdss OP-13
nf I-4 plwphib M-31 pwbinv M-101 vearly OP-41
ngcon I-5 plwsdibl M-65 pwcgdo M-136 vfb M-22
nt M-143 plwssf M-73 pwcgidl M-127 vfbov M-111
nu M-180 plwta1 M-196 pwcgso M-140 vgs OP-7
paramchk M-2 plwtbgidl M-200 pwcox M-132 vgt OP-12
pla1 M-84 plwtetabet M-167 pwcs M-204 von OP-55
pla2 M-88 plwtetacs M-209 pwetamob M-46 vp M-78
pla3 M-92 plwtetamob M-179 pwigacc M-105 vsat OP-14
plagidl M-118 plwtetaph M-175 pwiginv M-97 vsb OP-8
plalp M-75 plwtetar M-188 pwigov M-115 vth OP-11
plbacc M-108 plwtetasat M-192 pwko M-25 vto OP-9
plbet M-33 plwtetasr M-171 pwmexp M-81 vts OP-10
plbgidl M-122 plwtheph M-43 pwmo M-68 w I-3
plbinv M-100 plwther M-51 pwnfa M-146 weff OP-36
plcgdo M-135 plwthesat M-57 pwnfb M-150 wmax M-21
plcgidl M-126 plwthesr M-39 pwnfc M-154 wmin M-20
plcgso M-139 plwtheth M-61 pwphib M-30 wot M-16
plcox M-131 plwtnuexp M-184 pwsdibl M-64 wvar M-15
plcs M-203 plwtphib M-163 pwssf M-72 xgw I-6
pletamob M-45 plwtvfb M-159 pwta1 M-195
pligacc M-104 poa1 M-83 pwtbgidl M-199

MOS Model 11, Level 1102 (mos11021t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

Alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

Model Definition

model modelName mos11021t parameter=value ...

Model Parameters

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

lmin=0 m

Device length low limit for binning selection.

12

lmax=1 m

Device length high limit for binning selection.

13

wmin=0 m

Device width low limit for binning selection.

14

wmax=1 m

Device width high limit for binning selection.

15

vfb=-1.05 V

Flat-band voltage at reference temperature.

16

poko=0.5 V

Coefficient for the geometry independent part of KO.

17

plko=0 V

Coefficient for the length dependence of KO.

18

pwko=0 V

Coefficient for the width dependence of KO.

19

plwko=0 V

Coefficient for the length times width dependence of KO.

20

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

21

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

22

plphib=0 V

Coefficient for the length dependence of PHIB.

23

pwphib=0 V

Coefficient for the width dependence of PHIB.

24

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

25

pobet=0.00192(n)/0.000381(p) A/V2

Coefficient for the geometry independent part of BET.

26

plbet=0 A/V2

Coefficient for the length dependence of BET.

27

pwbet=0 A/V2

Coefficient for the width dependence of BET.

28

plwbet=0 A/V2

Coefficient for the width over length dependence of BET.

29

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry independent part of THESR.

30

plthesr=0 1/V

Coefficient of the length dependence of THESR.

31

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

32

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

33

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry independent part of THEPH.

34

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

35

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

36

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

37

poetamob=1.4(n)/3(p)

Coefficient of the geometry independent part of ETAMOB.

38

pletamob=0

Coefficient of the length dependence of ETAMOB.

39

pwetamob=0

Coefficient of the width dependence of ETAMOB.

40

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

41

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry independent part of THER.

42

plther=0 1/V

Coefficient of the length dependence of THER.

43

pwther=0 1/V

Coefficient of the width dependence of THER.

44

plwther=0 1/V

Coefficient of the length times width dependence of THER.

45

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

46

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

47

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry independent part of THESAT.

48

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

49

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

50

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

51

potheth=1e-05(n)/0(p) 1/V3

Coefficient of the geometry independent part of THETH.

52

pltheth=0 1/V3

Coefficient of the length dependence of THETH.

53

pwtheth=0 1/V3

Coefficient of the width dependence of THETH.

54

plwtheth=0 1/V3

Coefficient of the length times width dependence of THETH.

55

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry independent part of SDIBL.

56

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

57

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

58

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

59

pomo=0

Coefficient of the geometry independent part of MO.

60

plmo=0

Coefficient of the length dependence of MO.

61

pwmo=0

Coefficient of the width dependence of MO.

62

plwmo=0

Coefficient of the length times width dependence of MO.

63

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry independent part of SSF.

64

plssf=0 1/V

Coefficient of the length dependence of SSF.

65

pwssf=0 1/V

Coefficient of the width dependence of SSF.

66

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

67

poalp=0.025

Coefficient of the geometry independent part of ALP.

68

plalp=0

Coefficient of the length dependence of ALP.

69

pwalp=0

Coefficient of the width dependence of ALP.

70

plwalp=0

Coefficient of the length times width dependence of ALP.

71

vp=0.05 V

Characteristic voltage of channel-length modulation.

72

pomexp=0.2

Coefficient of the geometry independent part of MEXP.

73

plmexp=0

Coefficient of the length dependence of MEXP.

74

pwmexp=0

Coefficient of the width dependence of MEXP.

75

plwmexp=0

Coefficient of the length times width dependence of MEXP.

76

poa1=6.02(n)/6.86(p)

Coefficient of the geometry independent part of A1.

77

pla1=0

Coefficient of the length dependence of A1.

78

pwa1=0

Coefficient of the width dependence of A1.

79

plwa1=0

Coefficient of the length times width dependence of A1.

80

poa2=38(n)/57.3(p) V

Coefficient of the geometry independent part of A2.

81

pla2=0 V

Coefficient of the length dependence of A2.

82

pwa2=0 V

Coefficient of the width dependence of A2.

83

plwa2=0 V

Coefficient of the length times width dependence of A2.

84

poa3=0.641(n)/0.425(p)

Coefficient of the geometry independent part of A3.

85

pla3=0

Coefficient of the length dependence of A3.

86

pwa3=0

Coefficient of the width dependence of A3.

87

plwa3=0

Coefficient of the length times width dependence of A3.

88

poiginv=0 A/V2

Coefficient of the geometry independent part of IGINV.

89

pliginv=0 A/V2

Coefficient of the length dependence of IGINV.

90

pwiginv=0 A/V2

Coefficient of the width dependence of IGINV.

91

plwiginv=0 A/V2

Coefficient of the length times width dependence of IGINV.

92

pobinv=48(n)/87.5(p) V

Coefficient of the geometry independent part of BINV.

93

plbinv=0 V

Coefficient of the length dependence of BINV.

94

pwbinv=0 V

Coefficient of the width dependence of BINV.

95

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

96

poigacc=0 A/V2

Coefficient of the geometry independent part of IGACC.

97

pligacc=0 A/V2

Coefficient of the length dependence of IGACC.

98

pwigacc=0 A/V2

Coefficient of the width dependence of IGACC.

99

plwigacc=0 A/V2

Coefficient of the length times width dependence of IGACC.

100

pobacc=48 V

Coefficient of the geometry independent part of BACC.

101

plbacc=0 V

Coefficient of the length dependence of BACC.

102

pwbacc=0 V

Coefficient of the width dependence of BACC.

103

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

104

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

105

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

106

poigov=0 A/V2

Coefficient of the geometry independent part of IGOV.

107

pligov=0 A/V2

Coefficient of the length dependence of IGOV.

108

pwigov=0 A/V2

Coefficient of the width dependence of IGOV.

109

plwigov=0 A/V2

Coefficient of the length times width dependence of IGOV.

110

poagidl=0 A/V3

Coefficient of the geometry independent part of AGIDL.

111

plagidl=0 A/V3

Coefficient of the length dependence of AGIDL.

112

pwagidl=0 A/V3

Coefficient of the width dependence of AGIDL.

113

plwagidl=0 A/V3

Coefficient of the length times width dependence of AGIDL.

114

pobgidl=41 V

Coefficient of the geometry independent part of BGIDL.

115

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

116

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

117

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

118

pocgidl=0

Coefficient of the geometry independent part of CGIDL.

119

plcgidl=0

Coefficient of the length dependence of CGIDL.

120

pwcgidl=0

Coefficient of the width dependence of CGIDL.

121

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

122

tox=3.2e-09 m

Thickness of gate oxide layer.

123

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry independent part of COX.

124

plcox=0 F

Coefficient of the length dependence of COX.

125

pwcox=0 F

Coefficient of the width dependence of COX.

126

plwcox=0 F

Coefficient of the length times width dependence of COX.

127

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGDO.

128

plcgdo=0 F

Coefficient of the length dependence of CGDO.

129

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

130

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

131

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry independent part of CGSO.

132

plcgso=0 F

Coefficient of the length dependence of CGSO.

133

pwcgso=0 F

Coefficient of the width dependence of CGSO.

134

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

135

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

136

nt=1.62e-20 J

Thermal noise coefficient.

137

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4

Coefficient of the geometry independent part of NFA.

138

plnfa=0 1/V m4

Coefficient of the length dependence of NFA.

139

pwnfa=0 1/V m4

Coefficient of the width dependence of NFA.

140

plwnfa=0 1/V m4

Coefficient of the length times width dependence of NFA.

141

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2

Coefficient of the geometry independent part of NFB.

142

plnfb=0 1/V m2

Coefficient of the length dependence of NFB.

143

pwnfb=0 1/V m2

Coefficient of the width dependence of NFB.

144

plwnfb=0 1/V m2

Coefficient of the length times width dependence of NFB.

145

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry independent part of NFC.

146

plnfc=0 1/V

Coefficient of the length dependence of NFC.

147

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

148

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

149

potvfb=0.0005 V/K

Coefficient of the geometry independent part of STVFB.

150

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

151

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

152

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

153

potphib=-0.00085 V/K

Coefficient of the geometry independent part of STPHIB.

154

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

155

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

156

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

157

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry independent part of ETABET.

158

pltetabet=0

Coefficient of the length dependence of ETABET.

159

pwtetabet=0

Coefficient of the width dependence of ETABET.

160

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

161

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry independent part of ETASR.

162

pltetasr=0

Coefficient of the length dependence of ETASR.

163

pwtetasr=0

Coefficient of the width dependence of ETASR.

164

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

165

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry independent part of ETAPH.

166

pltetaph=0

Coefficient of the length dependence of ETAPH.

167

pwtetaph=0

Coefficient of the width dependence of ETAPH.

168

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

169

potetamob=0 1/K

Coefficient of the geometry independent part of STETAMOB.

170

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

171

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

172

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

173

nu=2

Exponent of field dependence of mobility model.

174

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry independent part of NUEXP.

175

pltnuexp=0

Coefficient of the length dependence of NUEXP.

176

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

177

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

178

potetar=0.95(n)/0.4(p)

Coefficient of the geometry independent part of ETAR.

179

pltetar=0

Coefficient of the length dependence of ETAR.

180

pwtetar=0

Coefficient of the width dependence of ETAR.

181

plwtetar=0

Coefficient of the length times width dependence of ETAR.

182

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry independent part of ETASAT.

183

pltetasat=0

Coefficient of the length dependence of ETASAT.

184

pwtetasat=0

Coefficient of the width dependence of ETASAT.

185

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

186

pota1=0 1/K

Coefficient of the geometry independent part of STA1.

187

plta1=0 1/K

Coefficient of the length dependence of STA1.

188

pwta1=0 1/K

Coefficient of the width dependence of STA1.

189

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

190

potbgidl=-0.000364 V/K

Coefficient of the geometry independent part of STBGIDL.

191

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

192

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

193

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

194

dta=0 K

Temperature offset of the device.

195

pocs=0

Coefficient of the geometry independent part of CS.

196

plcs=0

Coefficient of the length dependence of CS.

197

pwcs=0

Coefficient of the width dependence of CS.

198

plwcs=0

Coefficient of the length times width dependence of CS.

199

potetacs=0

Coefficient of the geometry independent part of ETACS.

200

pltetacs=0

Coefficient of the length dependence of ETACS.

201

pwtetacs=0

Coefficient of the width dependence of ETACS.

202

plwtetacs=0

Coefficient of the length times width dependence of ETACS.

203

rgo=0

Gate resistance.

204

rint=0 m2

Contact resistance between silicide and poly.

205

rvpoly=0 m2

Vertical poly resistance.

206

rshg=0 /Sqr

Gate electrode diffusion sheet resistance.

207

dlsil=0 m

Silicide extension over the physical gate length.

208

rth=300 K/W

Thermal resistance.

209

cth=3e-09 J/K

Thermal capacitance.

210

ath=0

Temperature coefficient of the thermal resistance.

211

scalelev=1.1e+04

flag for eldo model.

212

type=n

Transistor gender. Possible values are n and p.

213

imax=1000 A

Explosion current.

214

mbeo=0.0

DCmatch parameter.

215

mvto=0.0

Threshold mismatch intercept.

216

tnom (C)

Alias of tnom.

217

tref (C)

Alias of tnom.

218

simkitver=3.4

219

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg ()

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout ()

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V2)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

Pdiss (W)

Dissipation.

49

TK (K)

Actual device temperature.

50

table_ids (A)

Current.

51

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

52

table_qg (Coul)

Charge at g node.

53

table_qd (Coul)

Charge at d node.

54

table_qb (Coul)

Charge at b node.

55

BET (A/V2)

Gain factor.

56

ctype

Channel type (-1 for PMOS, +1 for NMOS).

57

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

58

pwr (W)

Power.

59

mos_region

MOS region.
Possible values are off, sat, triode,  and subth

60

diode_region

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

BET OP-55 plcs M-203 plwtvfb M-159 pwta1 M-195
Pdiss OP-48 pletamob M-45 poa1 M-83 pwtbgidl M-199
TK OP-49 pligacc M-104 poa2 M-87 pwtetabet M-166
ath M-217 pliginv M-96 poa3 M-91 pwtetacs M-208
beff OP-43 pligov M-114 poagidl M-117 pwtetamob M-178
cbb OP-33 plko M-24 poalp M-74 pwtetaph M-174
cbd OP-30 plmexp M-80 pobacc M-107 pwtetar M-187
cbg OP-31 plmo M-67 pobet M-32 pwtetasat M-191
cbs OP-32 plnfa M-145 pobgidl M-121 pwtetasr M-170
cdb OP-21 plnfb M-149 pobinv M-99 pwtheph M-42
cdd OP-18 plnfc M-153 pocgdo M-134 pwther M-50
cdg OP-19 plphib M-29 pocgidl M-125 pwthesat M-56
cds OP-20 plsdibl M-63 pocgso M-138 pwthesr M-38
cgb OP-25 plssf M-71 pocox M-130 pwtheth M-60
cgd OP-22 plta1 M-194 pocs M-202 pwtnuexp M-183
cgdol OP-34 pltbgidl M-198 poetamob M-44 pwtphib M-162
cgg OP-23 pltetabet M-165 poigacc M-103 pwtvfb M-158
cgs OP-24 pltetacs M-207 poiginv M-95 region I-9
cgsol OP-35 pltetamob M-177 poigov M-113 rg OP-38
compatible M-224 pltetaph M-173 poko M-23 rgo M-210
csb OP-29 pltetar M-186 pomexp M-79 rint M-211
csd OP-26 pltetasat M-190 pomo M-66 rout OP-40
csg OP-27 pltetasr M-169 ponfa M-144 rshg M-213
css OP-28 pltheph M-41 ponfb M-148 rth M-215
cth M-216 plther M-49 ponfc M-152 rvpoly M-212
ctype OP-56 plthesat M-55 pophib M-28 scalelev M-218
diode_region OP-60 plthesr M-37 posdibl M-62 sqrtsff OP-46
dlsil M-214 pltheth M-59 possf M-70 sqrtsfw OP-45
dta M-201 pltnuexp M-182 pota1 M-193 stop M-12
fknee OP-47 pltphib M-161 potbgidl M-197 table_ids OP-50
fug OP-44 pltvfb M-157 potetabet M-164 table_qb OP-54
gatenoise M-142 plwa1 M-86 potetacs M-206 table_qd OP-53
gds OP-17 plwa2 M-90 potetamob M-176 table_qg OP-52
gm OP-15 plwa3 M-94 potetaph M-172 table_vth OP-51
gmb OP-16 plwagidl M-120 potetar M-185 tdelay M-11
iavl OP-2 plwalp M-77 potetasat M-189 tempeff O-1
ids OP-1 plwbacc M-110 potetasr M-168 ther1 M-52
igb OP-5 plwbet M-35 potheph M-40 ther2 M-53
igd OP-4 plwbgidl M-124 pother M-48 tmin M-10
igs OP-3 plwbinv M-102 pothesat M-54 tnom M-222
keff OP-42 plwcgdo M-137 pothesr M-36 tox M-129
kov M-112 plwcgidl M-128 potheth M-58 tr M-17
kpinv M-27 plwcgso M-141 potnuexp M-181 tref M-223
l I-2 plwcox M-133 potphib M-160 trise I-8
lap M-14 plwcs M-205 potvfb M-156 type M-219
leff OP-37 plwetamob M-47 printscaled I-7 u OP-39
level M-1 plwigacc M-106 pwa1 M-85 vballmsg M-9
lmax M-19 plwiginv M-98 pwa2 M-89 vbdbhigh M-6
lmin M-18 plwigov M-116 pwa3 M-93 vbdblow M-5
lvar M-13 plwko M-26 pwagidl M-119 vbds M-4
m I-10 plwmexp M-82 pwalp M-76 vbox M-3
mbeo M-220 plwmo M-69 pwbacc M-109 vbsbhigh M-8
meff O-2 plwnfa M-147 pwbet M-34 vbsblow M-7
mos_region OP-59 plwnfb M-151 pwbgidl M-123 vds OP-6
mult I-1 plwnfc M-155 pwbinv M-101 vdss OP-13
mvto M-221 plwphib M-31 pwcgdo M-136 vearly OP-41
nf I-4 plwsdibl M-65 pwcgidl M-127 vfb M-22
ngcon I-5 plwssf M-73 pwcgso M-140 vfbov M-111
nt M-143 plwta1 M-196 pwcox M-132 vgs OP-7
nu M-180 plwtbgidl M-200 pwcs M-204 vgt OP-12
paramchk M-2 plwtetabet M-167 pwetamob M-46 von OP-57
pla1 M-84 plwtetacs M-209 pwigacc M-105 vp M-78
pla2 M-88 plwtetamob M-179 pwiginv M-97 vsat OP-14
pla3 M-92 plwtetaph M-175 pwigov M-115 vsb OP-8
plagidl M-118 plwtetar M-188 pwko M-25 vth OP-11
plalp M-75 plwtetasat M-192 pwmexp M-81 vto OP-9
plbacc M-108 plwtetasr M-171 pwmo M-68 vts OP-10
plbet M-33 plwtheph M-43 pwnfa M-146 w I-3
plbgidl M-122 plwther M-51 pwnfb M-150 weff OP-36
plbinv M-100 plwthesat M-57 pwnfc M-154 wmax M-21
plcgdo M-135 plwthesr M-39 pwphib M-30 wmin M-20
plcgidl M-126 plwtheth M-61 pwr OP-58 wot M-16
plcgso M-139 plwtnuexp M-184 pwsdibl M-64 wvar M-15
plcox M-131 plwtphib M-163 pwssf M-72 xgw I-6

MOS Model 11, Level 1102 (mos1102e)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos1102e parameter=value ...

Model Parameters

1

level=1.1e+03

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

tr=21 C

Reference temperature.

7

vfb=-1.05 V

Flat-band voltage at reference temperature.

8

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

9

ko=0.5 V

Body-effect factor.

10

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

11

phib=0.95 V

Surface potential at the onset of strong inversion.

12

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

13

bet=0.00192(n)/0.000381(p) A/V2

Gain factor.

14

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

15

thesr=0.356(n)/0.73(p) 1/V

Mobility degradation parameter due to surface roughness scattering.

16

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

17

theph=0.0129(n)/0.001(p) 1/V

Mobility degradation parameter due to phonon scattering.

18

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

19

etamob=1.4(n)/3(p)

Effective field parameter for dependence on depletion charge.

20

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

21

nu=2

Exponent of field dependence of mobility model.

22

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

23

ther=0.0812(n)/0.079(p) 1/V

Coefficient of series resistance.

24

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

25

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

26

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

27

thesat=0.251(n)/0.173(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

28

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

29

theth=1e-05(n)/0(p) 1/V3

Coefficient of self-heating.

30

sdibl=0.000853(n)/3.55e-05(p) 1/V

Drain-induced barrier lowering parameter.

31

mo=0

Parameter for (short-channel) subthreshold slope.

32

ssf=0.012(n)/0.01(p) 1/V

Static-feedback parameter.

33

alp=0.025

Factor of channel length modulation.

34

vp=0.05 V

Characteristic voltage of channel-length modulation.

35

mexp=5

Smoothing factor.

36

a1=6.02(n)/6.86(p)

Factor of the weak-avalanche current.

37

sta1=0 1/K

Coefficient of the temperature dependence of A1.

38

a2=38(n)/57.3(p) V

Exponent of the weak-avalanche current.

39

a3=0.641(n)/0.425(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

40

iginv=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

41

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

42

igacc=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

43

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

44

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

45

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

46

igov=0 A/V2

Gain factor for Source/Drain overlap tunneling current.

47

agidl=0 A/V3

Gain factor for gate-induced leakage current.

48

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

49

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

50

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

51

cox=2.98e-14(n)/2.72e-14(p) F

Oxide capacitance for the intrinsic channel (* mult).

52

cgdo=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-drain overlap (* mult).

53

cgso=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-source overlap (* mult).

54

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

55

nt=1.62e-20 J

Thermal noise coefficient.

56

nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)

First coefficient of the flicker noise.

57

nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)

Second coefficient of the flicker noise.

58

nfc=0(n)/3.63e-10(p) 1/V

Third coefficient of the flicker noise.

59

tox=3.2e-09 m

Thickness of gate oxide layer.

60

dta=0 K

Temperature offset of the device.

61

cs=0

Coefficient of Coulomb scattering.

62

etacs=0

Exponent of the temperature dependence of CS.

63

rg=0

Gate resistance.

64

scalelev=1.1e+04

Flag for eldo model.

65

type=n

Transistor gender. Possible values are n and p.

66

imax=1000 A

Explosion current.

67

mbe=0.0

DCmatch parameter.

68

mvt=0.0

Threshold mismatch intercept.

69

tnom (C)

alias of tnom.

70

tref (C)

Alias of tnom.

71

simkitver=3.4

72

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

rg ()

Gate resistance.

37

u

Transistor gain (gm/gds).

38

rout ()

Small-signal output resistance (1/gds).

39

vearly (V)

Equivalent Early voltage (|id|/gds).

40

keff (V )

Body effect parameter.

41

beff (A/V2)

Gain factor.

42

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

43

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

44

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

45

fknee (Hz)

Cross-over frequency above which white noise is dominant.

46

table_ids (A)

Current.

47

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

48

table_qg (Coul)

Charge at g node.

49

table_qd (Coul)

Charge at d node.

50

table_qb (Coul)

Charge at b node.

51

ctype

Channel type (-1 for PMOS, +1 for NMOS).

52

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

53

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode,  and subth.

54

diode_region=ON

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1 M-43 diode_region OP-54 mvt M-74 ther2 M-33
a2 M-45 dta M-67 nfa M-63 thesat M-34
a3 M-46 etabet M-21 nfb M-64 thesr M-22
agidl M-54 etacs M-69 nfc M-65 theth M-36
alp M-40 etamob M-26 nt M-62 tmin M-10
bacc M-50 etaph M-25 nu M-28 tnom M-75
beff OP-41 etar M-31 nuexp M-29 tox M-66
bet M-20 etasat M-35 paramchk M-2 tr M-13
bgidl M-55 etasr M-23 phib M-18 tref M-76
binv M-48 fknee OP-45 printscaled I-2 trise I-3
cbb OP-33 fug OP-42 region I-4 type M-72
cbd OP-30 gatenoise M-61 rg M-70 u OP-37
cbg OP-31 gds OP-17 rg OP-36 vballmsg M-9
cbs OP-32 gm OP-15 rout OP-38 vbdbhigh M-6
cdb OP-21 gmb OP-16 scalelev M-71 vbdblow M-5
cdd OP-18 iavl OP-2 sdibl M-37 vbds M-4
cdg OP-19 ids OP-1 sqrtsff OP-44 vbox M-3
cds OP-20 igacc M-49 sqrtsfw OP-43 vbsbhigh M-8
cgb OP-25 igb OP-5 ssf M-39 vbsblow M-7
cgd OP-22 igd OP-4 sta1 M-44 vds OP-6
cgdo M-59 iginv M-47 stbgidl M-56 vdss OP-13
cgdol OP-34 igov M-53 stetamob M-27 vearly OP-39
cgg OP-23 igs OP-3 stop M-12 vfb M-14
cgidl M-57 keff OP-40 stphib M-19 vfbov M-51
cgs OP-24 ko M-16 stvfb M-15 vgs OP-7
cgso M-60 kov M-52 table_ids OP-46 vgt OP-12
cgsol OP-35 kpinv M-17 table_qb OP-50 von OP-52
compatible M-77 level M-1 table_qd OP-49 vp M-41
cox M-58 m I-5 table_qg OP-48 vsat OP-14
cs M-68 mbe M-73 table_vth OP-47 vsb OP-8
csb OP-29 meff O-2 tdelay M-11 vth OP-11
csd OP-26 mexp M-42 tempeff O-1 vto OP-9
csg OP-27 mo M-38 theph M-24 vts OP-10
css OP-28 mos_region OP-53 ther M-30
ctype OP-51 mult I-1 ther1 M-32

MOS Model 11, Level 1102 (mos1102et)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos1102et parameter=value ...

Model Parameters

1

level=1.1e+03

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

tr=21 C

Reference temperature.

7

vfb=-1.05 V

Flat-band voltage at reference temperature.

8

stvfb=0.0005 V/K

Coefficient of temperature dependence of VFB.

9

ko=0.5 V

Body-effect factor.

10

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

11

phib=0.95 V

Surface potential at the onset of strong inversion.

12

stphib=-0.00085 V/K

Coefficient of the temperature dependency of PHIB.

13

bet=0.00192(n)/0.000381(p) A/V2

Gain factor.

14

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

15

thesr=0.356(n)/0.73(p) 1/V

Mobility degradation parameter due to surface roughness scattering.

16

etasr=0.65(n)/0.5(p)

Exponent of the temperature dependence of THESR.

17

theph=0.0129(n)/0.001(p) 1/V

Mobility degradation parameter due to phonon scattering.

18

etaph=1.35(n)/3.75(p)

Exponent of the temperature dependence of THEPH.

19

etamob=1.4(n)/3(p)

Effective field parameter for dependence on depletion charge.

20

stetamob=0 1/K

Coefficient of the temperature dependence of ETAMOB.

21

nu=2

Exponent of field dependence of mobility model.

22

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter NU.

23

ther=0.0812(n)/0.079(p) 1/V

Coefficient of series resistance.

24

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of THER.

25

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

26

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

27

thesat=0.251(n)/0.173(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

28

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of THESAT.

29

theth=1e-05(n)/0(p) 1/V3

Coefficient of self-heating.

30

sdibl=0.000853(n)/3.55e-05(p) 1/V

Drain-induced barrier lowering parameter.

31

mo=0

Parameter for (short-channel) subthreshold slope.

32

ssf=0.012(n)/0.01(p) 1/V

Static-feedback parameter.

33

alp=0.025

Factor of channel length modulation.

34

vp=0.05 V

Characteristic voltage of channel-length modulation.

35

mexp=5

Smoothing factor.

36

a1=6.02(n)/6.86(p)

Factor of the weak-avalanche current.

37

sta1=0 1/K

Coefficient of the temperature dependence of A1.

38

a2=38(n)/57.3(p) V

Exponent of the weak-avalanche current.

39

a3=0.641(n)/0.425(p)

Factor of the drain-source voltage above which weak-avalanche occurs.

40

iginv=0 A/V2

Gain factor for intrinsic gate tunneling current in inversion.

41

binv=48(n)/87.5(p) V

Probability factor for intrinsic gate tunneling current in inversion.

42

igacc=0 A/V2

Gain factor for intrinsic gate tunneling current in accumulation.

43

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

44

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

45

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

46

igov=0 A/V2

Gain factor for Source/Drain overlap tunneling current.

47

agidl=0 A/V3

Gain factor for gate-induced leakage current.

48

bgidl=41 V

Probability factor for gate-induced drain leakage current at reference temperature.

49

stbgidl=-0.000364 V/K

Coefficient of the temperature dependence of BGIDL.

50

cgidl=0

Factor for the lateral field dependence of the gate-induced leakage current.

51

cox=2.98e-14(n)/2.72e-14(p) F

Oxide capacitance for the intrinsic channel (* mult).

52

cgdo=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-drain overlap (* mult).

53

cgso=6.39e-15(n)/6.36e-15(p) F

Oxide capacitance for the gate-source overlap (* mult).

54

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

55

nt=1.62e-20 J

Thermal noise coefficient.

56

nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)

First coefficient of the flicker noise.

57

nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)

Second coefficient of the flicker noise.

58

nfc=0(n)/3.63e-10(p) 1/V

Third coefficient of the flicker noise.

59

tox=3.2e-09 m

Thickness of gate oxide layer.

60

dta=0 K

Temperature offset of the device.

61

cs=0

Coefficient of Coulomb scattering.

62

etacs=0

Exponent of the temperature dependence of CS.

63

rg=0

Gate resistance.

64

rth=300 K/W

Thermal resistance.

65

cth=3e-09 J/K

Thermal capacitance.

66

ath=0

Temperature coefficient of the thermal resistance.

67

scalelev=1.1e+04

Flag for eldo model.

68

type=n

Transistor gender. Possible values are n and p.

69

imax=1000 A

Explosion current.

70

mbe=0.0

DCmatch parameter.

71

mvt=0.0

Threshold mismatch intercept.

72

tnom (C)

Alias of tnom.

73

tref (C)

Alias of tnom.

74

simkitver=3.4

75

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

rg ()

Gate resistance.

37

u

Transistor gain (gm/gds).

38

rout ()

Small-signal output resistance (1/gds).

39

vearly (V)

Equivalent Early voltage (|id|/gds).

40

keff (V )

Body effect parameter.

41

beff (A/V2)

Gain factor.

42

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

43

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

44

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

45

fknee (Hz)

Cross-over frequency above which white noise is dominant.

46

Pdiss (W)

Dissipation.

47

TK (K)

Actual device temperature.

48

table_ids (A)

Current.

49

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

50

table_qg (Coul)

Charge at g node.

51

table_qd (Coul)

Charge at d node.

52

table_qb (Coul)

Charge at b node.

53

ctype

Channel type (-1 for PMOS, +1 for NMOS).

54

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

55

pwr (W)

Power.

56

mos_region

MOS region.
Possible values are off, sat, triode, and subth

57

diode_region

DIODE region.
Possible values are off and on.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-46 css OP-28 mos_region OP-56 theph M-24
TK OP-47 cth M-72 mult I-1 ther M-30
a1 M-43 ctype OP-53 mvt M-77 ther1 M-32
a2 M-45 diode_region OP-57 nfa M-63 ther2 M-33
a3 M-46 dta M-67 nfb M-64 thesat M-34
agidl M-54 etabet M-21 nfc M-65 thesr M-22
alp M-40 etacs M-69 nt M-62 theth M-36
ath M-73 etamob M-26 nu M-28 tmin M-10
bacc M-50 etaph M-25 nuexp M-29 tnom M-78
beff OP-41 etar M-31 paramchk M-2 tox M-66
bet M-20 etasat M-35 phib M-18 tr M-13
bgidl M-55 etasr M-23 printscaled I-2 tref M-79
binv M-48 fknee OP-45 pwr OP-55 trise I-3
cbb OP-33 fug OP-42 region I-4 type M-75
cbd OP-30 gatenoise M-61 rg M-70 u OP-37
cbg OP-31 gds OP-17 rg OP-36 vballmsg M-9
cbs OP-32 gm OP-15 rout OP-38 vbdbhigh M-6
cdb OP-21 gmb OP-16 rth M-71 vbdblow M-5
cdd OP-18 iavl OP-2 scalelev M-74 vbds M-4
cdg OP-19 ids OP-1 sdibl M-37 vbox M-3
cds OP-20 igacc M-49 sqrtsff OP-44 vbsbhigh M-8
cgb OP-25 igb OP-5 sqrtsfw OP-43 vbsblow M-7
cgd OP-22 igd OP-4 ssf M-39 vds OP-6
cgdo M-59 iginv M-47 sta1 M-44 vdss OP-13
cgdol OP-34 igov M-53 stbgidl M-56 vearly OP-39
cgg OP-23 igs OP-3 stetamob M-27 vfb M-14
cgidl M-57 keff OP-40 stop M-12 vfbov M-51
cgs OP-24 ko M-16 stphib M-19 vgs OP-7
cgso M-60 kov M-52 stvfb M-15 vgt OP-12
cgsol OP-35 kpinv M-17 table_ids OP-48 von OP-54
compatible M-80 level M-1 table_qb OP-52 vp M-41
cox M-58 m I-5 table_qd OP-51 vsat OP-14
cs M-68 mbe M-76 table_qg OP-50 vsb OP-8
csb OP-29 meff O-2 table_vth OP-49 vth OP-11
csd OP-26 mexp M-42 tdelay M-11 vto OP-9
csg OP-27 mo M-38 tempeff O-1 vts OP-10

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

w=2e-05 m

Drawn width of the channel region.

2

wd=2e-05 m

Drawn width of the drift region.

3

mult=1

Number of devices in parallel.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

8

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2001 parameter=value ...

Model Parameters

1

level=2e+03

Must be 2001.

2

paramchk=0

Level of clip warning info.

3

wvar=0 m

Width offset of the channel region.

4

wdvar=0 m

Width offset of the drift region.

5

tref=25 deg. C

Reference temperature.

6

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

7

stvfb=0 V/K

Temperature scaling coefficient for VFB.

8

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

9

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

10

kor=1.6 V^1/2

Body factor of the channel region of an infinitely wide transistor.

11

swko=0

Width scaling coefficient for KO.

12

kodr=1 V^1/2

Body factor of the drift region of an infinitely wide transistor.

13

swkod=0

Width scaling coefficient for the body factor of the drift region.

14

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

15

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

16

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

17

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

18

betw=7e-05 A/V2

Gain factor of a channel region of 1 um wide, at reference temperature.

19

etabet=1.6

Temperature scaling exponent for BET.

20

betaccw=7e-05 A/V-2

Gain factor of drift region of 1 um wide, at reference temperature.

21

etabetacc=1.5

Temperature scaling exponent for BETACC.

22

rdw=4e+03

On-resistance of a drift region of 1 um wide, at reference temperature.

23

etard=1.5

Temperature scaling exponent for RD.

24

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

25

the1r=0.09 V^-1

Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.

26

swthe1=0

Width scaling coefficient for THE1.

27

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

28

the2r=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.

29

swthe2=0

Width scaling coefficient for THE2.

30

the3r=0.4 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

31

etathe3=1

Temperature scaling exponent for THE3.

32

swthe3=0

Width scaling coefficient for THE3.

33

mexp=2

Smoothing factor for transition from linear to saturation regime.

34

alp=0.002

Factor for channel length modulation.

35

vp=0.05 V

Characteristic voltage of channel length modulation.

36

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

37

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

38

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

39

ssf=1e-12 V^(-1/2)

Factor for static feedback.

40

a1r=15

Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.

41

sta1=0 K^-1

Temperature scaling coefficient for A1.

42

swa1=0

Width scaling coefficient for A1.

43

a2=73 V

Exponent of weak avalanche current.

44

a3=0.8

Factor of the drain-source voltage above which weak avalanche occurs.

45

coxw=7.5e-16 F

Oxide capacitance for an intrinsic channel region of 1um wide.

46

coxdw=7.5e-16 F

Oxide capacitance for an intrinsic drift region of 1um wide.

47

cgdow=0 F

Gate-to-drain overlap capacitance for a drift region of 1 um wide.

48

cgsow=0 F

Gate-to-source overlap capacitance for a channel region of 1 um wide.

49

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

50

nfaw=1.4e+25 V^-1 m^-4

First coefficient of flicker noise for a channel region of 1 um wide.

51

nfbw=2e+08 V^-1 m-2

Second coefficient of flicker noise for a channel region of 1 um wide.

52

nfcw=0 V^-1

Third coefficient of flicker noise for a channel region of 1 um wide.

53

tox=3.8e-08 m

Thickness of the oxide above the channel region.

54

dta=0 K

Temperature offset to the ambient temperature.

55

type=n

Transistor gender. Possible values are n and p.

56

imax=1000 A

Explosion current.

57

vbox=0.0 V

Oxide breakdown voltage.

58

vbds=0.0 V

Drain-source breakdown voltage.

59

tnom (deg. C)

Alias of tnom.

60

tr (deg. C)

Alias of tnom.

61

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

alp

Factor for channel length modulation.

17

vp (V)

Characteristic voltage of channel length modulation.

18

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

19

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

20

mo (V)

Parameter for the (short-channel) sub-threshold slope.

21

ssf (V^-1/2)

Factor for static feedback.

22

a1

Factor of weak avalanche current, at reference temperature.

23

a2 (V)

Exponent of weak avalanche current.

24

a3

Factor of the drain-source voltage above which weak avalanche occurs.

25

cox (F)

Oxide capacitance for the intrinsic channel region.

26

coxd (F)

Oxide capacitance for the intrinsic drift region.

27

cgdo (F)

Gate-to-drain overlap capacitance.

28

cgso (F)

Gate-to-source overlap capacitance.

29

nt (J)

Coefficient of thermal noise, at reference temperature.

30

nfa (V^-1 m^-4)

First coefficient of flicker noise.

31

nfb (V^-1 m-2)

Second coefficient of flicker noise.

32

nfc (V^-1)

Third coefficient of flicker noise.

33

tox (m)

Thickness of the oxide above the channel region.

34

int_s

35

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Internal drain saturation voltage at actual bias.

13

vdssat (V)

Drain-source saturation voltage at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

weff (m)

Effective channel width for geometrical models.

34

wdeff (m)

Effective drift region width for geometrical model.

35

u

Transistor gain (gm/gds).

36

rout ()

Small-signal output resistance (1/gds).

37

vearly (V)

Equivalent Early voltage (|id|/gds).

38

beff (A/V2)

Gain factor.

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

40

gmmos (A/V)

Transconductance of channel region.

41

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

42

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

43

fknee (Hz)

Cross-over frequency above which white noise is dominant.

44

mos_region=SUBTHRESHOLD

45

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1      O-22
diode_region      OP-45
nfc      O-32
the3r      M-30
a1r      M-40
dta      M-54
nfcw      M-52
tnom      M-59
a2      M-43
etabet      M-19
nt      M-49
tox      M-53
a2      O-23
etabetacc      M-21
nt      O-29
tox      O-33
a3      M-44
etard      M-23
paramchk      M-2
tr      M-60
a3      O-24
etathe3      M-31
phib      M-14
tref      M-5
alp      M-34
fknee      OP-43
phib      O-5
trise      I-8
alp      O-16
fug      OP-39
phibd      M-16
type      M-55
beff      OP-38
gds      OP-16
phibd      O-6
u      OP-35
bet      O-7
gm      OP-14
rd      O-9
vbds      M-58
betacc      O-8
gmb      OP-15
rdw      M-22
vbox      M-57
betaccw      M-20
gmmos      OP-40
region      I-4
vdiseff      OP-11
betw      M-18
iavl      OP-2
rout      OP-36
vdissat      OP-12
cbb      OP-32
ids      OP-1
sdibl      M-36
vds      OP-3
cbd      OP-29
imax      M-56
sdibl      O-18
vdssat      OP-13
cbg      OP-30
int_d      O-35
simkitver      M-61
vearly      OP-37
cbs      OP-31
int_s      O-34
sqrtsff      OP-42
vfb      M-6
cdb      OP-20
ko      O-3
sqrtsfw      OP-41
vfb      O-1
cdd      OP-17
kod      O-4
ssf      M-39
vfbd      M-8
cdg      OP-18
kodr      M-12
ssf      O-21
vfbd      O-2
cds      OP-19
kor      M-10
sta1      M-41
vgs      OP-4
cgb      OP-24
lamd      M-24
stphib      M-15
vgt      OP-9
cgd      OP-21
lamd      O-10
stphibd      M-17
vp      M-35
cgdo      O-27
level      M-1
stvfb      M-7
vp      O-17
cgdow      M-47
m      I-5
stvfbd      M-9
vsb      OP-5
cgg      OP-22
mexp      M-33
swa1      M-42
vth      OP-8
cgs      OP-23
mexp      O-15
swko      M-11
vto      OP-6
cgso      O-28
mo      M-38
swkod      M-13
vtod      OP-10
cgsow      M-48
mo      O-20
swthe1      M-26
vts      OP-7
cox      O-25
mos_region      I-6
swthe2      M-29
w      I-1
coxd      O-26
mos_region      OP-44
swthe3      M-32
wd      I-2
coxdw      M-46
msdibl      M-37
the1      O-11
wdeff      OP-34
coxw      M-45
msdibl      O-19
the1acc      M-27
wdvar      M-4
csb      OP-28
mult      I-3
the1acc      O-12
weff      OP-33
csd      OP-25
nfa      O-30
the1r      M-25
wvar      M-3
csg      OP-26
nfaw      M-50
the2      O-13
css      OP-27
nfb      O-31
the2r      M-28
diode_region      I-7
nfbw      M-51
the3      O-14

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001e)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

3

m=1

Alias of mult.

4

mos_region=SUBTHRESHOLD

5

diode_region=ON

6

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2001e parameter=value ...

Model Parameters

1

level=2e+03

Must be 2001.

2

paramchk=0

Level of clip warning info.

3

tref=25 deg. C

Reference temperature.

4

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

5

stvfb=0 V/K

Temperature scaling coefficient for VFB.

6

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

7

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

8

ko=1.6 V^1/2

Body factor of the channel region.

9

kod=1 V^1/2

Body factor of the drift region.

10

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

11

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

12

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

13

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

14

bet=0.0014 A/V2

Gain factor of the channel region, at reference temperature.

15

etabet=1.6

Temperature scaling exponent for BET.

16

betacc=0.0014 A/V-2

Gain factor for accumulation in the drift region, at reference temperature.

17

etabetacc=1.5

Temperature scaling exponent for BETACC.

18

rd=200

On-resistance of the drift region, at reference temperature.

19

etard=1.5

Temperature scaling exponent for RD.

20

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

21

the1=0.09 V^-1

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

22

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

23

the2=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

24

the3=0.4 V^-1

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

25

etathe3=1

Temperature scaling exponent for THE3.

26

mexp=2

Smoothing factor for transition from linear to saturation regime.

27

alp=0.002

Factor for channel length modulation.

28

vp=0.05 V

Characteristic voltage of channel length modulation.

29

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

30

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

31

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

32

ssf=1e-12 V^(-1/2)

Factor for static feedback.

33

a1=15

Factor of weak avalanche current, at reference temperature.

34

sta1=0 K^-1

Temperature scaling coefficient for A1.

35

a2=73 V

Exponent of weak avalanche current.

36

a3=0.8

Factor of the drain-source voltage above which weak avalanche occurs.

37

cox=1.5e-14 F

Oxide capacitance for the intrinsic channel region.

38

coxd=1.5e-14 F

Oxide capacitance for the intrinsic drift region.

39

cgdo=0 F

Gate-to-drain overlap capacitance.

40

cgso=0 F

Gate-to-source overlap capacitance.

41

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

42

nfa=7e+23 V^-1 m^-4

First coefficient of flicker noise.

43

nfb=1e+07 V^-1 m-2

Second coefficient of flicker noise.

44

nfc=0 V^-1

Third coefficient of flicker noise.

45

tox=3.8e-08 m

Thickness of the oxide above the channel region.

46

dta=0 K

Temperature offset to the ambient temperature.

47

type=n

Transistor gender. Possible values are n and p.

48

imax=1000 A

Explosion current.

49

vbox=0.0 V

Oxide breakdown voltage.

50

vbds=0.0 V

Drain-source breakdown voltage.

51

tnom (deg. C)

Alias of tnom.

52

tr (deg. C)

Alias of tnom.

53

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

alp

Factor for channel length modulation.

17

vp (V)

Characteristic voltage of channel length modulation.

18

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

19

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

20

mo (V)

Parameter for the (short-channel) sub-threshold slope.

21

ssf (V^-1/2)

Factor for static feedback.

22

a1

Factor of weak avalanche current, at reference temperature.

23

a2 (V)

Exponent of weak avalanche current.

24

a3

Factor of the drain-source voltage above which weak avalanche occurs.

25

cox (F)

Oxide capacitance for the intrinsic channel region.

26

coxd (F)

Oxide capacitance for the intrinsic drift region.

27

cgdo (F)

Gate-to-drain overlap capacitance.

28

cgso (F)

Gate-to-source overlap capacitance.

29

nt (J)

Coefficient of thermal noise, at reference temperature.

30

nfa (V^-1 m^-4)

First coefficient of flicker noise.

31

nfb (V^-1 m-2)

Second coefficient of flicker noise.

32

nfc (V^-1)

Third coefficient of flicker noise.

33

tox (m)

Thickness of the oxide above the channel region.

34

int_s

35

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Internal drain saturation voltage at actual bias.

13

vdssat (V)

Drain-source saturation voltage at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

u

Transistor gain (gm/gds).

34

rout ()

Small-signal output resistance (1/gds).

35

vearly (V)

Equivalent Early voltage (|id|/gds).

36

beff (A/V2)

Gain factor.

37

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

38

gmmos (A/V)

Transconductance of channel region.

39

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

40

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

41

fknee (Hz)

Cross-over frequency above which white noise is dominant.

42

mos_region=SUBTHRESHOLD

43

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1      M-33
csg      OP-26
msdibl      O-19
the2      M-23
a1      O-22
css      OP-27
mult      I-1
the2      O-13
a2      M-35
diode_region      I-5
nfa      M-42
the3      M-24
a2      O-23
diode_region      OP-43
nfa      O-30
the3      O-14
a3      M-36
dta      M-46
nfb      M-43
tnom      M-51
a3      O-24
etabet      M-15
nfb      O-31
tox      M-45
alp      M-27
etabetacc      M-17
nfc      M-44
tox      O-33
alp      O-16
etard      M-19
nfc      O-32
tr      M-52
beff      OP-36
etathe3      M-25
nt      M-41
tref      M-3
bet      M-14
fknee      OP-41
nt      O-29
trise      I-6
bet      O-7
fug      OP-37
paramchk      M-2
type      M-47
betacc      M-16
gds      OP-16
phib      M-10
u      OP-33
betacc      O-8
gm      OP-14
phib      O-5
vbds      M-50
cbb      OP-32
gmb      OP-15
phibd      M-12
vbox      M-49
cbd      OP-29
gmmos      OP-38
phibd      O-6
vdiseff      OP-11
cbg      OP-30
iavl      OP-2
rd      M-18
vdissat      OP-12
cbs      OP-31
ids      OP-1
rd      O-9
vds      OP-3
cdb      OP-20
imax      M-48
region      I-2
vdssat      OP-13
cdd      OP-17
int_d      O-35
rout      OP-34
vearly      OP-35
cdg      OP-18
int_s      O-34
sdibl      M-29
vfb      M-4
cds      OP-19
ko      M-8
sdibl      O-18
vfb      O-1
cgb      OP-24
ko      O-3
simkitver      M-53
vfbd      M-6
cgd      OP-21
kod      M-9
sqrtsff      OP-40
vfbd      O-2
cgdo      M-39
kod      O-4
sqrtsfw      OP-39
vgs      OP-4
cgdo      O-27
lamd      M-20
ssf      M-32
vgt      OP-9
cgg      OP-22
lamd      O-10
ssf      O-21
vp      M-28
cgs      OP-23
level      M-1
sta1      M-34
vp      O-17
cgso      M-40
m      I-3
stphib      M-11
vsb      OP-5
cgso      O-28
mexp      M-26
stphibd      M-13
vth      OP-8
cox      M-37
mexp      O-15
stvfb      M-5
vto      OP-6
cox      O-25
mo      M-31
stvfbd      M-7
vtod      OP-10
coxd      M-38
mo      O-20
the1      M-21
vts      OP-7
coxd      O-26
mos_region      I-4
the1      O-11
csb      OP-28
mos_region      OP-42
the1acc      M-22
csd      OP-25
msdibl      M-30
the1acc      O-12

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001et)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

3

m=1

Alias of mult.

4

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2001et parameter=value ...

Model Parameters

1

level=2e+03

Must be 2001.

2

paramchk=0

Level of clip warning info.

3

tref=25 deg. C

Reference temperature.

4

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

5

stvfb=0 V/K

Temperature scaling coefficient for VFB.

6

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

7

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

8

ko=1.6 V^1/2

Body factor of the channel region.

9

kod=1 V^1/2

Body factor of the drift region.

10

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

11

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

12

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

13

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

14

bet=0.0014 A/V2

Gain factor of the channel region, at reference temperature.

15

etabet=1.6

Temperature scaling exponent for BET.

16

betacc=0.0014 A/V-2

Gain factor for accumulation in the drift region, at reference temperature.

17

etabetacc=1.5

Temperature scaling exponent for BETACC.

18

rd=200

On-resistance of the drift region, at reference temperature.

19

etard=1.5

Temperature scaling exponent for RD.

20

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

21

the1=0.09 V^-1

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

22

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

23

the2=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

24

the3=0.4 V^-1

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

25

etathe3=1

Temperature scaling exponent for THE3.

26

mexp=2

Smoothing factor for transition from linear to saturation regime.

27

alp=0.002

Factor for channel length modulation.

28

vp=0.05 V

Characteristic voltage of channel length modulation.

29

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

30

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

31

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

32

ssf=1e-12 V^(-1/2)

Factor for static feedback.

33

a1=15

Factor of weak avalanche current, at reference temperature.

34

sta1=0 K^-1

Temperature scaling coefficient for A1.

35

a2=73 V

Exponent of weak avalanche current.

36

a3=0.8

Factor of the drain-source voltage above which weak avalanche occurs.

37

cox=1.5e-14 F

Oxide capacitance for the intrinsic channel region.

38

coxd=1.5e-14 F

Oxide capacitance for the intrinsic drift region.

39

cgdo=0 F

Gate-to-drain overlap capacitance.

40

cgso=0 F

Gate-to-source overlap capacitance.

41

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

42

nfa=7e+23 V^-1 m^-4

First coefficient of flicker noise.

43

nfb=1e+07 V^-1 m-2

Second coefficient of flicker noise.

44

nfc=0 V^-1

Third coefficient of flicker noise.

45

tox=3.8e-08 m

Thickness of the oxide above the channel region.

46

dta=0 K

Temperature offset to the ambient temperature.

47

rth=300 K/W

Thermal resistance.

48

cth=3e-09 J/K

Thermal capacitance.

49

ath=0

Temperature coefficient of the thermal resistance.

50

type=n

Transistor gender. Possible values are n and p.

51

imax=1000 A

Explosion current.

52

vbox=0.0 V

Oxide breakdown voltage.

53

vbds=0.0 V

Drain-source breakdown voltage.

54

tnom (deg. C)

Alias of tnom.

55

tr (deg. C)

Alias of tnom.

56

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

alp

Factor for channel length modulation.

17

vp (V)

Characteristic voltage of channel length modulation.

18

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

19

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

20

mo (V)

Parameter for the (short-channel) sub-threshold slope.

21

ssf (V^-1/2)

Factor for static feedback.

22

a1

Factor of weak avalanche current, at reference temperature.

23

a2 (V)

Exponent of weak avalanche current.

24

a3

Factor of the drain-source voltage above which weak avalanche occurs.

25

cox (F)

Oxide capacitance for the intrinsic channel region.

26

coxd (F)

Oxide capacitance for the intrinsic drift region.

27

cgdo (F)

Gate-to-drain overlap capacitance.

28

cgso (F)

Gate-to-source overlap capacitance.

29

nt (J)

Coefficient of thermal noise, at reference temperature.

30

nfa (V^-1 m^-4)

First coefficient of flicker noise.

31

nfb (V^-1 m-2)

Second coefficient of flicker noise.

32

nfc (V^-1)

Third coefficient of flicker noise.

33

tox (m)

Thickness of the oxide above the channel region.

34

rth (K/W)

Thermal resistance.

35

cth (J/K)

Thermal capacitance.

36

int_s

37

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Internal drain saturation voltage at actual bias.

13

vdssat (V)

Drain-source saturation voltage at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

u

Transistor gain (gm/gds).

34

rout ()

Small-signal output resistance (1/gds).

35

vearly (V)

Equivalent Early voltage (|id|/gds).

36

beff (A/V2)

Gain factor.

37

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

38

gmmos (A/V)

Transconductance of channel region.

39

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

40

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

41

fknee (Hz)

Cross-over frequency above which white noise is dominant.

42

Pdiss (W)

Dissipation.

43

TK (K)

Actual temperature.

44

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-42 coxd O-26 mult I-1 the1acc O-12
TK OP-43 csb OP-28 nfa M-42 the2 M-23
a1 M-33 csd OP-25 nfa O-30 the2 O-13
a1 O-22 csg OP-26 nfb M-43 the3 M-24
a2 M-35 css OP-27 nfb O-31 the3 O-14
a2 O-23 cth M-48 nfc M-44 tnom M-54
a3 M-36 cth O-35 nfc O-32 tox M-45
a3 O-24 dta M-46 nt M-41 tox O-33
alp M-27 etabet M-15 nt O-29 tr M-55
alp O-16 etabetacc M-17 paramchk M-2 tref M-3
ath M-49 etard M-19 phib M-10 trise I-4
beff OP-36 etathe3 M-25 phib O-5 type M-50
bet M-14 fknee OP-41 phibd M-12 u OP-33
bet O-7 fug OP-37 phibd O-6 vbds M-53
betacc M-16 gds OP-16 pwr OP-44 vbox M-52
betacc O-8 gm OP-14 rd M-18 vdiseff OP-11
cbb OP-32 gmb OP-15 rd O-9 vdissat OP-12
cbd OP-29 gmmos OP-38 region I-2 vds OP-3
cbg OP-30 iavl OP-2 rout OP-34 vdssat OP-13
cbs OP-31 ids OP-1 rth M-47 vearly OP-35
cdb OP-20 imax M-51 rth O-34 vfb M-4
cdd OP-17 ko M-8 sdibl M-29 vfb O-1
cdg OP-18 ko O-3 sdibl O-18 vfbd M-6
cds OP-19 kod M-9 sqrtsff OP-40 vfbd O-2
cgb OP-24 kod O-4 sqrtsfw OP-39 vgs OP-4
cgd OP-21 lamd M-20 ssf M-32 vgt OP-9
cgdo M-39 lamd O-10 ssf O-21 vp M-28
cgdo O-27 level M-1 sta1 M-34 vp O-17
cgg OP-22 m I-3 stphib M-11 vsb OP-5
cgs OP-23 mexp M-26 stphibd M-13 vth OP-8
cgso M-40 mexp O-15 stvfb M-5 vto OP-6
cgso O-28 mo M-31 stvfbd M-7 vtod OP-10
cox M-37 mo O-20 the1 M-21 vts OP-7
cox O-25 msdibl M-30 the1 O-11
coxd M-38 msdibl O-19 the1acc M-22

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001t)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

w=2e-05 m

Drawn width of the channel region.

2

wd=2e-05 m

Drawn width of the drift region.

3

mult=1

Number of devices in parallel.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

8

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2001t parameter=value ...

Model Parameters

1

level=2e+03

Must be 2001.

2

paramchk=0

Level of clip warning info.

3

wvar=0 m

Width offset of the channel region.

4

wdvar=0 m

Width offset of the drift region.

5

tref=25 deg. C

Reference temperature.

6

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

7

stvfb=0 V/K

Temperature scaling coefficient for VFB.

8

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

9

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

10

kor=1.6 V^1/2

Body factor of the channel region of an infinitely wide transistor.

11

swko=0

Width scaling coefficient for KO.

12

kodr=1 V^1/2

Body factor of the drift region of an infinitely wide transistor.

13

swkod=0

Width scaling coefficient for the body factor of the drift region.

14

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

15

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

16

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

17

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

18

betw=7e-05 A/V2

Gain factor of a channel region of 1 um wide, at reference temperature.

19

etabet=1.6

Temperature scaling exponent for BET.

20

betaccw=7e-05 A/V-2

Gain factor of drift region of 1 um wide, at reference temperature.

21

etabetacc=1.5

Temperature scaling exponent for BETACC.

22

rdw=4e+03

On-resistance of a drift region of 1 um wide, at reference temperature.

23

etard=1.5

Temperature scaling exponent for RD.

24

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

25

the1r=0.09 V^-1

Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.

26

swthe1=0

Width scaling coefficient for THE1.

27

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

28

the2r=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.

29

swthe2=0

Width scaling coefficient for THE2.

30

the3r=0.4 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

31

etathe3=1

Temperature scaling exponent for THE3.

32

swthe3=0

Width scaling coefficient for THE3.

33

mexp=2

Smoothing factor for transition from linear to saturation regime.

34

alp=0.002

Factor for channel length modulation.

35

vp=0.05 V

Characteristic voltage of channel length modulation.

36

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

37

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

38

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

39

ssf=1e-12 V^(-1/2)

Factor for static feedback.

40

a1r=15

Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.

41

sta1=0 K^-1

Temperature scaling coefficient for A1.

42

swa1=0

Width scaling coefficient for A1.

43

a2=73 V

Exponent of weak avalanche current.

44

a3=0.8

Factor of the drain-source voltage above which weak avalanche occurs.

45

coxw=7.5e-16 F

Oxide capacitance for an intrinsic channel region of 1um wide.

46

coxdw=7.5e-16 F

Oxide capacitance for an intrinsic drift region of 1um wide.

47

cgdow=0 F

Gate-to-drain overlap capacitance for a drift region of 1 um wide.

48

cgsow=0 F

Gate-to-source overlap capacitance for a channel region of 1 um wide.

49

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

50

nfaw=1.4e+25 V^-1 m^-4

First coefficient of flicker noise for a channel region of 1 um wide.

51

nfbw=2e+08 V^-1 m-2

Second coefficient of flicker noise for a channel region of 1 um wide.

52

nfcw=0 V^-1

Third coefficient of flicker noise for a channel region of 1 um wide.

53

tox=3.8e-08 m

Thickness of the oxide above the channel region.

54

dta=0 K

Temperature offset to the ambient temperature.

55

rth=300 K/W

Thermal resistance.

56

cth=3e-09 J/K

Thermal capacitance.

57

ath=0

Temperature coefficient of the thermal resistance.

58

type=n

Transistor gender. Possible values are n and p.

59

imax=1000 A

Explosion current.

60

vbox=0.0 V

Oxide breakdown voltage.

61

vbds=0.0 V

Drain-source breakdown voltage.

62

tnom (deg. C)

Alias of tnom.

63

tr (deg. C)

Alias of tnom.

64

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

alp

Factor for channel length modulation.

17

vp (V)

Characteristic voltage of channel length modulation.

18

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

19

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

20

mo (V)

Parameter for the (short-channel) sub-threshold slope.

21

ssf (V^-1/2)

Factor for static feedback.

22

a1

Factor of weak avalanche current, at reference temperature.

23

a2 (V)

Exponent of weak avalanche current.

24

a3

Factor of the drain-source voltage above which weak avalanche occurs.

25

cox (F)

Oxide capacitance for the intrinsic channel region.

26

coxd (F)

Oxide capacitance for the intrinsic drift region.

27

cgdo (F)

Gate-to-drain overlap capacitance.

28

cgso (F)

Gate-to-source overlap capacitance.

29

nt (J)

Coefficient of thermal noise, at reference temperature.

30

nfa (V^-1 m^-4)

First coefficient of flicker noise.

31

nfb (V^-1 m-2)

Second coefficient of flicker noise.

32

nfc (V^-1)

Third coefficient of flicker noise.

33

tox (m)

Thickness of the oxide above the channel region.

34

rth (K/W)

Thermal resistance.

35

cth (J/K)

Thermal capacitance.

36

int_s

37

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Internal drain saturation voltage at actual bias.

13

vdssat (V)

Drain-source saturation voltage at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

weff (m)

Effective channel width for geometrical models.

34

wdeff (m)

Effective drift region width for geometrical model.

35

u

Transistor gain (gm/gds).

36

rout ()

Small-signal output resistance (1/gds).

37

vearly (V)

Equivalent Early voltage (|id|/gds).

38

beff (A/V2)

Gain factor.

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

40

gmmos (A/V)

Transconductance of channel region.

41

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

42

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

43

fknee (Hz)

Cross-over frequency above which white noise is dominant.

44

Pdiss (W)

Dissipation.

45

TK (K)

Actual temperature.

46

mos_region=SUBTHRESHOLD

47

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss      OP-44
css      OP-27
nfaw      M-50
the1r      M-25
TK      OP-45
cth      M-56
nfb      O-31
the2      O-13
a1      O-22
cth      O-35
nfbw      M-51
the2r      M-28
a1r      M-40
diode_region      I-7
nfc      O-32
the3      O-14
a2      M-43
diode_region      OP-47
nfcw      M-52
the3r      M-30
a2      O-23
dta      M-54
nt      M-49
tnom      M-62
a3      M-44
etabet      M-19
nt      O-29
tox      M-53
a3      O-24
etabetacc      M-21
paramchk      M-2
tox      O-33
alp      M-34
etard      M-23
phib      M-14
tr      M-63
alp      O-16
etathe3      M-31
phib      O-5
tref      M-5
ath      M-57
fknee      OP-43
phibd      M-16
trise      I-8
beff      OP-38
fug      OP-39
phibd      O-6
type      M-58
bet      O-7
gds      OP-16
rd      O-9
u      OP-35
betacc      O-8
gm      OP-14
rdw      M-22
vbds      M-61
betaccw      M-20
gmb      OP-15
region      I-4
vbox      M-60
betw      M-18
gmmos      OP-40
rout      OP-36
vdiseff      OP-11
cbb      OP-32
iavl      OP-2
rth      M-55
vdissat      OP-12
cbd      OP-29
ids      OP-1
rth      O-34
vds      OP-3
cbg      OP-30
imax      M-59
sdibl      M-36
vdssat      OP-13
cbs      OP-31
int_d      O-37
sdibl      O-18
vearly      OP-37
cdb      OP-20
int_s      O-36
simkitver      M-64
vfb      M-6
cdd      OP-17
ko      O-3
sqrtsff      OP-42
vfb      O-1
cdg      OP-18
kod      O-4
sqrtsfw      OP-41
vfbd      M-8
cds      OP-19
kodr      M-12
ssf      M-39
vfbd      O-2
cgb      OP-24
kor      M-10
ssf      O-21
vgs      OP-4
cgd      OP-21
lamd      M-24
sta1      M-41
vgt      OP-9
cgdo      O-27
lamd      O-10
stphib      M-15
vp      M-35
cgdow      M-47
level      M-1
stphibd      M-17
vp      O-17
cgg      OP-22
m      I-5
stvfb      M-7
vsb      OP-5
cgs      OP-23
mexp      M-33
stvfbd      M-9
vth      OP-8
cgso      O-28
mexp      O-15
swa1      M-42
vto      OP-6
cgsow      M-48
mo      M-38
swko      M-11
vtod      OP-10
cox      O-25
mo      O-20
swkod      M-13
vts      OP-7
coxd      O-26
mos_region      I-6
swthe1      M-26
w      I-1
coxdw      M-46
mos_region      OP-46
swthe2      M-29
wd      I-2
coxw      M-45
msdibl      M-37
swthe3      M-32
wdeff      OP-34
csb      OP-28
msdibl      O-19
the1      O-11
wdvar      M-4
csd      OP-25
mult      I-3
the1acc      M-27
weff      OP-33
csg      OP-26
nfa      O-30
the1acc      O-12
wvar      M-3

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

w=2e-05 m

Drawn width of the channel region.

3

wd=2e-05 m

Drawn width of the drift region.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

8

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2002 parameter=value ...

Model Parameters

1

level=2e+03

Must be 2002.

2

paramchk=0

Level of clip warning info.

3

wvar=0 m

Width offset of the channel region.

4

wdvar=0 m

Width offset of the drift region.

5

tref=25 deg. C

Reference temperature.

6

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

7

stvfb=0 V/K

Temperature scaling coefficient for VFB.

8

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

9

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

10

kor=1.6 V^1/2

Body factor of the channel region of an infinitely wide transistor.

11

swko=0

Width scaling coefficient for KO.

12

kodr=1 V^1/2

Body factor of the drift region of an infinitely wide transistor.

13

swkod=0

Width scaling coefficient for the body factor of the drift region.

14

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

15

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

16

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

17

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

18

betw=7e-05 A/V2

Gain factor of a channel region of 1 um wide, at reference temperature.

19

etabet=1.6

Temperature scaling exponent for BET.

20

betaccw=7e-05 A/V-2

Gain factor of drift region of 1 um wide, at reference temperature.

21

etabetacc=1.5

Temperature scaling exponent for BETACC.

22

rdw=4e+03

On-resistance of a drift region of 1 um wide, at reference temperature.

23

etard=1.5

Temperature scaling exponent for RD.

24

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

25

the1r=0.09 V^-1

Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.

26

swthe1=0

Width scaling coefficient for THE1.

27

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

28

the2r=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.

29

swthe2=0

Width scaling coefficient for THE2.

30

the3r=0.4 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

31

etathe3=1

Temperature scaling exponent for THE3.

32

swthe3=0

Width scaling coefficient for THE3.

33

mexp=2

Smoothing factor for transition from linear to saturation regime.

34

the3dr=0 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

35

etathe3d=1

Temperature scaling exponent for THE3D.

36

swthe3d=0

Width scaling coefficient for THE3D.

37

mexpd=2

Smoothing factor for transition from linear to quasi-saturation regime.

38

alp=0.002

Factor for channel length modulation.

39

vp=0.05 V

Characteristic voltage of channel length modulation.

40

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

41

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

42

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

43

ssf=1e-12 V^(-1/2)

Factor for static feedback.

44

a1chr=15

Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.

45

sta1ch=0 K^-1

Temperature scaling coefficient for A1CH.

46

swa1ch=0

Width scaling coefficient for A1CH.

47

a2ch=73 V

Exponent of channel weak avalanche current.

48

a3ch=0.8

Factor of the drain-source voltage above which channel weak avalanche occurs.

49

a1drr=15

Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.

50

sta1dr=0 K^-1

Temperature scaling coefficient for A1DR.

51

swa1dr=0

Width scaling coefficient for A1DR.

52

a2dr=73 V

Exponent of drift weak avalanche current.

53

a3dr=0.8

Factor of the drain-source voltage above which drift weak avalanche occurs.

54

coxw=7.5e-16 F

Oxide capacitance for an intrinsic channel region of 1um wide.

55

coxdw=7.5e-16 F

Oxide capacitance for an intrinsic drift region of 1um wide.

56

cgdow=0 F

Gate-to-drain overlap capacitance for a drift region of 1 um wide.

57

cgsow=0 F

Gate-to-source overlap capacitance for a channel region of 1 um wide.

58

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

59

nfaw=1.4e+25 V^-1 m^-4

First coefficient of flicker noise for a channel region of 1 um wide.

60

nfbw=2e+08 V^-1 m-2

Second coefficient of flicker noise for a channel region of 1 um wide.

61

nfcw=0 V^-1

Third coefficient of flicker noise for a channel region of 1 um wide.

62

tox=3.8e-08 m

Thickness of the oxide above the channel region.

63

dta=0 K

Temperature offset to the ambient temperature.

64

type=n

Transistor gender. Possible values are n and p.

65

imax=1000 A

Explosion current.

66

vbox=0.0 V

Oxide breakdown voltage.

67

vbds=0.0 V

Drain-source breakdown voltage.

68

tnom (deg. C)

Alias of tnom.

69

tr (deg. C)

Alias of tnom.

70

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

the3d (V^-1)

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

17

etathe3d

Temperature scaling exponent for THE3D.

18

mexpd

Smoothing factor for transition from linear to quasi-saturation regime.

19

alp

Factor for channel length modulation.

20

vp (V)

Characteristic voltage of channel length modulation.

21

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

22

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

23

mo (V)

Parameter for the (short-channel) sub-threshold slope.

24

ssf (V^-1/2)

Factor for static feedback.

25

a1ch

Factor of channel weak avalanche current, at reference temperature.

26

a2ch (V)

Exponent of channel weak avalanche current.

27

a3ch

Factor of the drain-source voltage above which channel weak avalanche occurs.

28

a1dr

Factor of drift weak avalanche current, at reference temperature.

29

a2dr (V)

Exponent of drift weak avalanche current.

30

a3dr

Factor of the drain-source voltage above which drift weak avalanche occurs.

31

cox (F)

Oxide capacitance for the intrinsic channel region.

32

coxd (F)

Oxide capacitance for the intrinsic drift region.

33

cgdo (F)

Gate-to-drain overlap capacitance.

34

cgso (F)

Gate-to-source overlap capacitance.

35

nt (J)

Coefficient of thermal noise, at reference temperature.

36

nfa (V^-1 m^-4)

First coefficient of flicker noise.

37

nfb (V^-1 m-2)

Second coefficient of flicker noise.

38

nfc (V^-1)

Third coefficient of flicker noise.

39

tox (m)

Thickness of the oxide above the channel region.

40

int_s

41

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Saturation voltage of channel region at actual bias.

13

vddisat (V)

Saturation voltage of drift region at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

weff (m)

Effective channel width for geometrical models.

34

wdeff (m)

Effective drift region width for geometrical model.

35

u

Transistor gain (gm/gds).

36

rout ()

Small-signal output resistance (1/gds).

37

vearly (V)

Equivalent Early voltage (|id|/gds).

38

beff (A/V2)

Gain factor.

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

40

gmmos (A/V)

Transconductance of channel region.

41

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

42

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

43

fknee (Hz)

Cross-over frequency above which white noise is dominant.

44

mos_region=SUBTHRESHOLD

45

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1ch      O-25
csg      OP-26
nfa      O-36
the1r      M-25
a1chr      M-44
css      OP-27
nfaw      M-59
the2      O-13
a1dr      O-28
diode_region      I-7
nfb      O-37
the2r      M-28
a1drr      M-49
diode_region      OP-45
nfbw      M-60
the3      O-14
a2ch      M-47
dta      M-63
nfc      O-38
the3d      O-16
a2ch      O-26
etabet      M-19
nfcw      M-61
the3dr      M-34
a2dr      M-52
etabetacc      M-21
nt      M-58
the3r      M-30
a2dr      O-29
etard      M-23
nt      O-35
tnom      M-68
a3ch      M-48
etathe3      M-31
paramchk      M-2
tox      M-62
a3ch      O-27
etathe3d      M-35
phib      M-14
tox      O-39
a3dr      M-53
etathe3d      O-17
phib      O-5
tr      M-69
a3dr      O-30
fknee      OP-43
phibd      M-16
tref      M-5
alp      M-38
fug      OP-39
phibd      O-6
trise      I-8
alp      O-19
gds      OP-16
rd      O-9
type      M-64
beff      OP-38
gm      OP-14
rdw      M-22
u      OP-35
bet      O-7
gmb      OP-15
region      I-4
vbds      M-67
betacc      O-8
gmmos      OP-40
rout      OP-36
vbox      M-66
betaccw      M-20
iavl      OP-2
sdibl      M-40
vddisat      OP-13
betw      M-18
ids      OP-1
sdibl      O-21
vdiseff      OP-11
cbb      OP-32
imax      M-65
simkitver      M-70
vdissat      OP-12
cbd      OP-29
int_d      O-41
sqrtsff      OP-42
vds      OP-3
cbg      OP-30
int_s      O-40
sqrtsfw      OP-41
vearly      OP-37
cbs      OP-31
ko      O-3
ssf      M-43
vfb      M-6
cdb      OP-20
kod      O-4
ssf      O-24
vfb      O-1
cdd      OP-17
kodr      M-12
sta1ch      M-45
vfbd      M-8
cdg      OP-18
kor      M-10
sta1dr      M-50
vfbd      O-2
cds      OP-19
lamd      M-24
stphib      M-15
vgs      OP-4
cgb      OP-24
lamd      O-10
stphibd      M-17
vgt      OP-9
cgd      OP-21
level      M-1
stvfb      M-7
vp      M-39
cgdo      O-33
m      I-5
stvfbd      M-9
vp      O-20
cgdow      M-56
mexp      M-33
swa1ch      M-46
vsb      OP-5
cgg      OP-22
mexp      O-15
swa1dr      M-51
vth      OP-8
cgs      OP-23
mexpd      M-37
swko      M-11
vto      OP-6
cgso      O-34
mexpd      O-18
swkod      M-13
vtod      OP-10
cgsow      M-57
mo      M-42
swthe1      M-26
vts      OP-7
cox      O-31
mo      O-23
swthe2      M-29
w      I-2
coxd      O-32
mos_region      I-6
swthe3      M-32
wd      I-3
coxdw      M-55
mos_region      OP-44
swthe3d      M-36
wdeff      OP-34
coxw      M-54
msdibl      M-41
the1      O-11
wdvar      M-4
csb      OP-28
msdibl      O-22
the1acc      M-27
weff      OP-33
csd      OP-25
mult      I-1
the1acc      O-12
wvar      M-3

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002e)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

3

m=1

Alias of mult.

4

mos_region=SUBTHRESHOLD

5

diode_region=ON

6

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2002e parameter=value ...

Model Parameters

1

level=2e+03

Must be 2002.

2

paramchk=0

Level of clip warning info.

3

tref=25 deg. C

Reference temperature.

4

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

5

stvfb=0 V/K

Temperature scaling coefficient for VFB.

6

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

7

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

8

ko=1.6 V^1/2

Body factor of the channel region.

9

kod=1 V^1/2

Body factor of the drift region.

10

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

11

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

12

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

13

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

14

bet=0.0014 A/V2

Gain factor of the channel region, at reference temperature.

15

etabet=1.6

Temperature scaling exponent for BET.

16

betacc=0.0014 A/V-2

Gain factor for accumulation in the drift region, at reference temperature.

17

etabetacc=1.5

Temperature scaling exponent for BETACC.

18

rd=200

On-resistance of the drift region, at reference temperature.

19

etard=1.5

Temperature scaling exponent for RD.

20

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

21

the1=0.09 V^-1

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

22

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

23

the2=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

24

the3=0.4 V^-1

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

25

etathe3=1

Temperature scaling exponent for THE3.

26

mexp=2

Smoothing factor for transition from linear to saturation regime.

27

the3d=0 V^-1

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

28

etathe3d=1

Temperature scaling exponent for THE3D.

29

mexpd=2

Smoothing factor for transition from linear to quasi-saturation regime.

30

alp=0.002

Factor for channel length modulation.

31

vp=0.05 V

Characteristic voltage of channel length modulation.

32

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

33

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

34

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

35

ssf=1e-12 V^(-1/2)

Factor for static feedback.

36

a1ch=15

Factor of channel weak avalanche current, at reference temperature.

37

sta1ch=0 K^-1

Temperature scaling coefficient for A1CH.

38

a2ch=73 V

Exponent of channel weak avalanche current.

39

a3ch=0.8

Factor of the drain-source voltage above which channel weak avalanche occurs.

40

a1dr=15

Factor of drift weak avalanche current, at reference temperature.

41

sta1dr=0 K^-1

Temperature scaling coefficient for A1DR.

42

a2dr=73 V

Exponent of drift weak avalanche current.

43

a3dr=0.8

Factor of the drain-source voltage above which drift weak avalanche occurs.

44

cox=1.5e-14 F

Oxide capacitance for the intrinsic channel region.

45

coxd=1.5e-14 F

Oxide capacitance for the intrinsic drift region.

46

cgdo=0 F

Gate-to-drain overlap capacitance.

47

cgso=0 F

Gate-to-source overlap capacitance.

48

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

49

nfa=7e+23 V^-1 m^-4

First coefficient of flicker noise.

50

nfb=1e+07 V^-1 m-2

Second coefficient of flicker noise.

51

nfc=0 V^-1

Third coefficient of flicker noise.

52

tox=3.8e-08 m

Thickness of the oxide above the channel region.

53

dta=0 K

Temperature offset to the ambient temperature.

54

type=n

Transistor gender. Possible values are n and p.

55

imax=1000 A

Explosion current.

56

vbox=0.0 V

Oxide breakdown voltage.

57

vbds=0.0 V

Drain-source breakdown voltage.

58

tnom (deg. C)

Alias of tnom.

59

tr (deg. C)

Alias of tnom.

60

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

the3d (V^-1)

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

17

etathe3d

Temperature scaling exponent for THE3D.

18

mexpd

Smoothing factor for transition from linear to quasi-saturation regime.

19

alp

Factor for channel length modulation.

20

vp (V)

Characteristic voltage of channel length modulation.

21

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

22

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

23

mo (V)

Parameter for the (short-channel) sub-threshold slope.

24

ssf (V^-1/2)

Factor for static feedback.

25

a1ch

Factor of channel weak avalanche current, at reference temperature.

26

a2ch (V)

Exponent of channel weak avalanche current.

27

a3ch

Factor of the drain-source voltage above which channel weak avalanche occurs.

28

a1dr

Factor of drift weak avalanche current, at reference temperature.

29

a2dr (V)

Exponent of drift weak avalanche current.

30

a3dr

Factor of the drain-source voltage above which drift weak avalanche occurs.

31

cox (F)

Oxide capacitance for the intrinsic channel region.

32

coxd (F)

Oxide capacitance for the intrinsic drift region.

33

cgdo (F)

Gate-to-drain overlap capacitance.

34

cgso (F)

Gate-to-source overlap capacitance.

35

nt (J)

Coefficient of thermal noise, at reference temperature.

36

nfa (V^-1 m^-4)

First coefficient of flicker noise.

37

nfb (V^-1 m-2)

Second coefficient of flicker noise.

38

nfc (V^-1)

Third coefficient of flicker noise.

39

tox (m)

Thickness of the oxide above the channel region.

40

int_s

41

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Saturation voltage of channel region at actual bias.

13

vddisat (V)

Saturation voltage of drift region at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

u

Transistor gain (gm/gds).

34

rout ()

Small-signal output resistance (1/gds).

35

vearly (V)

Equivalent Early voltage (|id|/gds).

36

beff (A/V2)

Gain factor.

37

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

38

gmmos (A/V)

Transconductance of channel region.

39

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

40

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

41

fknee (Hz)

Cross-over frequency above which white noise is dominant.

42

mos_region=SUBTHRESHOLD

43

diode_region=ON

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

a1ch      M-36
coxd      O-32
mo      O-23
the1acc      M-22
a1ch      O-25
csb      OP-28
mos_region      I-4
the1acc      O-12
a1dr      M-40
csd      OP-25
mos_region      OP-42
the2      M-23
a1dr      O-28
csg      OP-26
msdibl      M-33
the2      O-13
a2ch      M-38
css      OP-27
msdibl      O-22
the3      M-24
a2ch      O-26
diode_region      I-5
mult      I-1
the3      O-14
a2dr      M-42
diode_region      OP-43
nfa      M-49
the3d      M-27
a2dr      O-29
dta      M-53
nfa      O-36
the3d      O-16
a3ch      M-39
etabet      M-15
nfb      M-50
tnom      M-58
a3ch      O-27
etabetacc      M-17
nfb      O-37
tox      M-52
a3dr      M-43
etard      M-19
nfc      M-51
tox      O-39
a3dr      O-30
etathe3      M-25
nfc      O-38
tr      M-59
alp      M-30
etathe3d      M-28
nt      M-48
tref      M-3
alp      O-19
etathe3d      O-17
nt      O-35
trise      I-6
beff      OP-36
fknee      OP-41
paramchk      M-2
type      M-54
bet      M-14
fug      OP-37
phib      M-10
u      OP-33
bet      O-7
gds      OP-16
phib      O-5
vbds      M-57
betacc      M-16
gm      OP-14
phibd      M-12
vbox      M-56
betacc      O-8
gmb      OP-15
phibd      O-6
vddisat      OP-13
cbb      OP-32
gmmos      OP-38
rd      M-18
vdiseff      OP-11
cbd      OP-29
iavl      OP-2
rd      O-9
vdissat      OP-12
cbg      OP-30
ids      OP-1
region      I-2
vds      OP-3
cbs      OP-31
imax      M-55
rout      OP-34
vearly      OP-35
cdb      OP-20
int_d      O-41
sdibl      M-32
vfb      M-4
cdd      OP-17
int_s      O-40
sdibl      O-21
vfb      O-1
cdg      OP-18
ko      M-8
simkitver      M-60
vfbd      M-6
cds      OP-19
ko      O-3
sqrtsff      OP-40
vfbd      O-2
cgb      OP-24
kod      M-9
sqrtsfw      OP-39
vgs      OP-4
cgd      OP-21
kod      O-4
ssf      M-35
vgt      OP-9
cgdo      M-46
lamd      M-20
ssf      O-24
vp      M-31
cgdo      O-33
lamd      O-10
sta1ch      M-37
vp      O-20
cgg      OP-22
level      M-1
sta1dr      M-41
vsb      OP-5
cgs      OP-23
m      I-3
stphib      M-11
vth      OP-8
cgso      M-47
mexp      M-26
stphibd      M-13
vto      OP-6
cgso      O-34
mexp      O-15
stvfb      M-5
vtod      OP-10
cox      M-44
mexpd      M-29
stvfbd      M-7
vts      OP-7
cox      O-31
mexpd      O-18
the1      M-21
coxd      M-45
mo      M-34
the1      O-11

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002et)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

3

m=1

Alias of mult.

4

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2002et parameter=value ...

Model Parameters

1

evel=2e+03

Must be 2002.

2

paramchk=0

Level of clip warning info.

3

tref=25 deg. C

Reference temperature.

4

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

5

stvfb=0 V/K

Temperature scaling coefficient for VFB.

6

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

7

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

8

ko=1.6 V^1/2

Body factor of the channel region.

9

kod=1 V^1/2

Body factor of the drift region.

10

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

11

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

12

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

13

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

14

bet=0.0014 A/V2

Gain factor of the channel region, at reference temperature.

15

etabet=1.6

Temperature scaling exponent for BET.

16

betacc=0.0014 A/V-2

Gain factor for accumulation in the drift region, at reference temperature.

17

etabetacc=1.5

Temperature scaling exponent for BETACC.

18

rd=200

On-resistance of the drift region, at reference temperature.

19

etard=1.5

Temperature scaling exponent for RD.

20

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

21

the1=0.09 V^-1

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

22

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

23

the2=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

24

the3=0.4 V^-1

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

25

etathe3=1

Temperature scaling exponent for THE3.

26

mexp=2

Smoothing factor for transition from linear to saturation regime.

27

the3d=0 V^-1

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

28

etathe3d=1

Temperature scaling exponent for THE3D.

29

mexpd=2

Smoothing factor for transition from linear to quasi-saturation regime.

30

alp=0.002

Factor for channel length modulation.

31

vp=0.05 V

Characteristic voltage of channel length modulation.

32

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

33

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

34

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

35

ssf=1e-12 V^(-1/2)

Factor for static feedback.

36

a1ch=15

Factor of channel weak avalanche current, at reference temperature.

37

sta1ch=0 K^-1

Temperature scaling coefficient for A1CH.

38

a2ch=73 V

Exponent of channel weak avalanche current.

39

a3ch=0.8

Factor of the drain-source voltage above which channel weak avalanche occurs.

40

a1dr=15

Factor of drift weak avalanche current, at reference temperature.

41

sta1dr=0 K^-1

Temperature scaling coefficient for A1DR.

42

a2dr=73 V

Exponent of drift weak avalanche current.

43

a3dr=0.8

Factor of the drain-source voltage above which drift weak avalanche occurs.

44

cox=1.5e-14 F

Oxide capacitance for the intrinsic channel region.

45

coxd=1.5e-14 F

Oxide capacitance for the intrinsic drift region.

46

cgdo=0 F

Gate-to-drain overlap capacitance.

47

cgso=0 F

Gate-to-source overlap capacitance.

48

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

49

nfa=7e+23 V^-1 m^-4

First coefficient of flicker noise.

50

nfb=1e+07 V^-1 m-2

Second coefficient of flicker noise.

51

nfc=0 V^-1

Third coefficient of flicker noise.

52

tox=3.8e-08 m

Thickness of the oxide above the channel region.

53

dta=0 K

Temperature offset to the ambient temperature.

54

rth=300 K/W

Thermal resistance.

55

cth=3e-09 J/K

Thermal capacitance.

56

ath=0

Temperature coefficient of the thermal resistance.

57

type=n

Transistor gender. Possible values are n and p.

58

imax=1000 A

Explosion current.

59

vbox=0.0 V

Oxide breakdown voltage.

60

vbds=0.0 V

Drain-source breakdown voltage.

61

tnom (deg. C)

Alias of tnom.

62

tr (deg. C)

Alias of tnom.

63

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

the3d (V^-1)

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

17

etathe3d

Temperature scaling exponent for THE3D.

18

mexpd

Smoothing factor for transition from linear to quasi-saturation regime.

19

alp

Factor for channel length modulation.

20

vp (V)

Characteristic voltage of channel length modulation.

21

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

22

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

23

mo (V)

Parameter for the (short-channel) sub-threshold slope.

24

ssf (V^-1/2)

Factor for static feedback.

25

a1ch

Factor of channel weak avalanche current, at reference temperature.

26

a2ch (V)

Exponent of channel weak avalanche current.

27

a3ch

Factor of the drain-source voltage above which channel weak avalanche occurs.

28

a1dr

Factor of drift weak avalanche current, at reference temperature.

29

a2dr (V)

Exponent of drift weak avalanche current.

30

a3dr

Factor of the drain-source voltage above which drift weak avalanche occurs.

31

cox (F)

Oxide capacitance for the intrinsic channel region.

32

coxd (F)

Oxide capacitance for the intrinsic drift region.

33

cgdo (F)

Gate-to-drain overlap capacitance.

34

cgso (F)

Gate-to-source overlap capacitance.

35

nt (J)

Coefficient of thermal noise, at reference temperature.

36

nfa (V^-1 m^-4)

First coefficient of flicker noise.

37

nfb (V^-1 m-2)

Second coefficient of flicker noise.

38

nfc (V^-1)

Third coefficient of flicker noise.

39

tox (m)

Thickness of the oxide above the channel region.

40

rth (K/W)

Thermal resistance.

41

cth (J/K)

Thermal capacitance.

42

int_s

43

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Saturation voltage of channel region at actual bias.

13

vddisat (V)

Saturation voltage of drift region at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

u

Transistor gain (gm/gds).

34

rout ()

Small-signal output resistance (1/gds).

35

vearly (V)

Equivalent Early voltage (|id|/gds).

36

beff (A/V2)

Gain factor.

37

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

38

gmmos (A/V)

Transconductance of channel region.

39

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

40

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

41

fknee (Hz)

Cross-over frequency above which white noise is dominant.

42

Pdiss (W)

Dissipation.

43

TK (K)

Actual temperature.

44

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-42 cox M-44 mo M-34 the1 O-11
TK OP-43 cox O-31 mo O-23 the1acc M-22
a1ch M-36 coxd M-45 msdibl M-33 the1acc O-12
a1ch O-25 coxd O-32 msdibl O-22 the2 M-23
a1dr M-40 csb OP-28 mult I-1 the2 O-13
a1dr O-28 csd OP-25 nfa M-49 the3 M-24
a2ch M-38 csg OP-26 nfa O-36 the3 O-14
a2ch O-26 css OP-27 nfb M-50 the3d M-27
a2dr M-42 cth M-55 nfb O-37 the3d O-16
a2dr O-29 cth O-41 nfc M-51 tnom M-61
a3ch M-39 dta M-53 nfc O-38 tox M-52
a3ch O-27 etabet M-15 nt M-48 tox O-39
a3dr M-43 etabetacc M-17 nt O-35 tr M-62
a3dr O-30 etard M-19 paramchk M-2 tref M-3
alp M-30 etathe3 M-25 phib M-10 trise I-4
alp O-19 etathe3d M-28 phib O-5 type M-57
ath M-56 etathe3d O-17 phibd M-12 u OP-33
beff OP-36 fknee OP-41 phibd O-6 vbds M-60
bet M-14 fug OP-37 pwr OP-44 vbox M-59
bet O-7 gds OP-16 rd M-18 vddisat OP-13
betacc M-16 gm OP-14 rd O-9 vdiseff OP-11
betacc O-8 gmb OP-15 region I-2 vdissat OP-12
cbb OP-32 gmmos OP-38 rout OP-34 vds OP-3
cbd OP-29 iavl OP-2 rth M-54 vearly OP-35
cbg OP-30 ids OP-1 rth O-40 vfb M-4
cbs OP-31 imax M-58 sdibl M-32 vfb O-1
cdb OP-20 ko M-8 sdibl O-21 vfbd M-6
cdd OP-17 ko O-3 sqrtsff OP-40 vfbd O-2
cdg OP-18 kod M-9 sqrtsfw OP-39 vgs OP-4
cds OP-19 kod O-4 ssf M-35 vgt OP-9
cgb OP-24 lamd M-20 ssf O-24 vp M-31
cgd OP-21 lamd O-10 sta1ch M-37 vp O-20
cgdo M-46 level M-1 sta1dr M-41 vsb OP-5
cgdo O-33 m I-3 stphib M-11 vth OP-8
cgg OP-22 mexp M-26 stphibd M-13 vto OP-6
cgs OP-23 mexp O-15 stvfb M-5 vtod OP-10
cgso M-47 mexpd M-29 stvfbd M-7 vts OP-7
cgso O-34 mexpd O-18 the1 M-21

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002t)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

w=2e-05 m

Drawn width of the channel region.

3

wd=2e-05 m

Drawn width of the drift region.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

8

trise=0

Temperature rise from ambient.

Model Definition

model modelName mos2002t parameter=value ...

Model Parameters

1

level=2e+03

Must be 2002.

2

paramchk=0

Level of clip warning info.

3

wvar=0 m

Width offset of the channel region.

4

wdvar=0 m

Width offset of the drift region.

5

tref=25 deg. C

Reference temperature.

6

vfb=-1 V

Flatband voltage of the channel region, at reference temperature.

7

stvfb=0 V/K

Temperature scaling coefficient for VFB.

8

vfbd=-0.1 V

Flatband voltage of the drift region, at reference temperature.

9

stvfbd=0 V/K

Temperature scaling coefficient for the flatband voltage of the drift region.

10

kor=1.6 V^1/2

Body factor of the channel region of an infinitely wide transistor.

11

swko=0

Width scaling coefficient for KO.

12

kodr=1 V^1/2

Body factor of the drift region of an infinitely wide transistor.

13

swkod=0

Width scaling coefficient for the body factor of the drift region.

14

phib=0.86 V

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

15

stphib=-0.0012 V/K

Temperature scaling coefficient for PHIB.

16

phibd=0.78 V

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

17

stphibd=-0.0012 V/K

Temperature scaling coefficient for PHIBD.

18

betw=7e-05 A/V2

Gain factor of a channel region of 1 um wide, at reference temperature.

19

etabet=1.6

Temperature scaling exponent for BET.

20

betaccw=7e-05 A/V-2

Gain factor of drift region of 1 um wide, at reference temperature.

21

etabetacc=1.5

Temperature scaling exponent for BETACC.

22

rdw=4e+03

On-resistance of a drift region of 1 um wide, at reference temperature.

23

etard=1.5

Temperature scaling exponent for RD.

24

lamd=0.2

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

25

the1r=0.09 V^-1

Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.

26

swthe1=0

Width scaling coefficient for THE1.

27

the1acc=0.02 V^-1

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

28

the2r=0.03 V^(-1/2)

Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.

29

swthe2=0

Width scaling coefficient for THE2.

30

the3r=0.4 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

31

etathe3=1

Temperature scaling exponent for THE3.

32

swthe3=0

Width scaling coefficient for THE3.

33

mexp=2

Smoothing factor for transition from linear to saturation regime.

34

the3dr=0 V^-1

Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.

35

etathe3d=1

Temperature scaling exponent for THE3D.

36

swthe3d=0

Width scaling coefficient for THE3D.

37

mexpd=2

Smoothing factor for transition from linear to quasi-saturation regime.

38

alp=0.002

Factor for channel length modulation.

39

vp=0.05 V

Characteristic voltage of channel length modulation.

40

sdibl=0.001 V^(-1/2)

Factor for drain-induced barrier lowering.

41

msdibl=3

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

42

mo=0 V

Parameter for the (short-channel) sub-threshold slope.

43

ssf=1e-12 V^(-1/2)

Factor for static feedback.

44

a1chr=15

Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.

45

sta1ch=0 K^-1

Temperature scaling coefficient for A1CH.

46

swa1ch=0

Width scaling coefficient for A1CH.

47

a2ch=73 V

Exponent of channel weak avalanche current.

48

a3ch=0.8

Factor of the drain-source voltage above which channel weak avalanche occurs.

49

a1drr=15

Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.

50

sta1dr=0 K^-1

Temperature scaling coefficient for A1DR.

51

swa1dr=0

Width scaling coefficient for A1DR.

52

a2dr=73 V

Exponent of drift weak avalanche current.

53

a3dr=0.8

Factor of the drain-source voltage above which drift weak avalanche occurs.

54

coxw=7.5e-16 F

Oxide capacitance for an intrinsic channel region of 1um wide.

55

coxdw=7.5e-16 F

Oxide capacitance for an intrinsic drift region of 1um wide.

56

cgdow=0 F

Gate-to-drain overlap capacitance for a drift region of 1 um wide.

57

cgsow=0 F

Gate-to-source overlap capacitance for a channel region of 1 um wide.

58

nt=1.65e-20 J

Coefficient of thermal noise, at reference temperature.

59

nfaw=1.4e+25 V^-1 m^-4

First coefficient of flicker noise for a channel region of 1 um wide.

60

nfbw=2e+08 V^-1 m-2

Second coefficient of flicker noise for a channel region of 1 um wide.

61

nfcw=0 V^-1

Third coefficient of flicker noise for a channel region of 1 um wide.

62

tox=3.8e-08 m

Thickness of the oxide above the channel region.

63

dta=0 K

Temperature offset to the ambient temperature.

64

rth=300 K/W

Thermal resistance.

65

cth=3e-09 J/K

Thermal capacitance.

66

ath=0

Temperature coefficient of the thermal resistance.

67

type=n

Transistor gender. Possible values are n and p.

68

imax=1000 A

Explosion current.

69

vbox=0.0 V

Oxide breakdown voltage.

70

vbds=0.0 V

Drain-source breakdown voltage.

71

tnom (deg. C)

Alias of tnom.

72

tr (deg. C)

Alias of tnom.

73

simkitver=3.4

Output Parameters

1

vfb (V)

Flatband voltage of the channel region, at reference temperature.

2

vfbd (V)

Flatband voltage of the drift region.

3

ko (V^1/2)

Body factor of the channel region.

4

kod (V^1/2)

Body factor of the drift region.

5

phib (V)

Surface potential at the onset of strong inversion in the channel region, at reference temperature.

6

phibd (V)

Surface potential at the onset of strong inversion in the drift region, at reference temperature.

7

bet (A/V2)

Gain factor of the channel region, at reference temperature.

8

betacc (A/V2)

Gain factor for accumulation in the drift region, at reference temperature.

9

rd ()

On-resistance of the drift region, at reference temperature.

10

lamd

Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.

11

the1 (V^-1)

Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.

12

the1acc (V^-1)

Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.

13

the2 (V^-1/2)

Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.

14

the3 (V^-1)

Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.

15

mexp

Smoothing factor for transition from linear to saturation regime.

16

the3d (V^-1)

Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.

17

etathe3d

Temperature scaling exponent for THE3D.

18

mexpd

Smoothing factor for transition from linear to quasi-saturation regime.

19

alp

Factor for channel length modulation.

20

vp (V)

Characteristic voltage of channel length modulation.

21

sdibl (V^-1/2)

Factor for drain-induced barrier lowering.

22

msdibl

Exponent for the drain-induced barrier lowering dependence on the backgate bias.

23

mo (V)

Parameter for the (short-channel) sub-threshold slope.

24

ssf (V^-1/2)

Factor for static feedback.

25

a1ch

Factor of channel weak avalanche current, at reference temperature.

26

a2ch (V)

Exponent of channel weak avalanche current.

27

a3ch

Factor of the drain-source voltage above which channel weak avalanche occurs.

28

a1dr

Factor of drift weak avalanche current, at reference temperature.

29

a2dr (V)

Exponent of drift weak avalanche current.

30

a3dr

Factor of the drain-source voltage above which drift weak avalanche occurs.

31

cox (F)

Oxide capacitance for the intrinsic channel region.

32

coxd (F)

Oxide capacitance for the intrinsic drift region.

33

cgdo (F)

Gate-to-drain overlap capacitance.

34

cgso (F)

Gate-to-source overlap capacitance.

35

nt (J)

Coefficient of thermal noise, at reference temperature.

36

nfa (V^-1 m^-4)

First coefficient of flicker noise.

37

nfb (V^-1 m-2)

Second coefficient of flicker noise.

38

nfc (V^-1)

Third coefficient of flicker noise.

39

tox (m)

Thickness of the oxide above the channel region.

40

rth (K/W)

Thermal resistance.

41

cth (J/K)

Thermal capacitance.

42

int_s

43

int_d

Operating-Point Parameters

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

vds (V)

Drain-source voltage.

4

vgs (V)

Gate-source voltage.

5

vsb (V)

Source-bulk voltage.

6

vto (V)

Zero-bias threshold voltage.

7

vts (V)

Threshold voltage including back-bias effects.

8

vth (V)

Threshold voltage including back-bias and drain-bias effects.

9

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

10

vtod (V)

Threshold voltage of the drift region.

11

vdiseff (V)

Effective internal drain-to-source voltage at actual bias.

12

vdissat (V)

Saturation voltage of channel region at actual bias.

13

vddisat (V)

Saturation voltage of drift region at actual bias.

14

gm (A/V)

Transconductance (d ids / d vgs).

15

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

16

gds (A/V)

Output conductance (d ids / d vds).

17

cdd (F)

Capacitance (d qd / d vd).

18

cdg (F)

Capacitance (- d qd / d vg).

19

cds (F)

Capacitance (- d qd / d vs).

20

cdb (F)

Capacitance (- d qd / d vb).

21

cgd (F)

Capacitance (- d qg / d vd).

22

cgg (F)

Capacitance (d qg / d vg).

23

cgs (F)

Capacitance (- d qg / d vs).

24

cgb (F)

Capacitance (- d qg / d vb).

25

csd (F)

Capacitance (- d qs / d vd).

26

csg (F)

Capacitance (- d qs / d vg).

27

css (F)

Capacitance (d qs / d vs).

28

csb (F)

Capacitance (- d qs / d vb).

29

cbd (F)

Capacitance (- d qb / d vd).

30

cbg (F)

Capacitance (- d qb / d vg).

31

cbs (F)

Capacitance (- d qb / d vs).

32

cbb (F)

Capacitance (d qb / d vb).

33

weff (m)

Effective channel width for geometrical models.

34

wdeff (m)

Effective drift region width for geometrical model.

35

u

Transistor gain (gm/gds).

36

rout ()

Small-signal output resistance (1/gds).

37

vearly (V)

Equivalent Early voltage (|id|/gds).

38

beff (A/V2)

Gain factor.

39

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

40

gmmos (A/V)

Transconductance of channel region.

41

sqrtsfw (V/Hz^1/2)

Input-referred RMS white noise voltage density.

42

sqrtsff (V/Hz^1/2)

Input-referred RMS white noise voltage density at 1 kHz.

43

fknee (Hz)

Cross-over frequency above which white noise is dominant.

44

Pdiss (W)

Dissipation.

45

TK (K)

Actual temperature.

46

pwr (W)

Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-44 csb OP-28 nfbw M-60 the2r M-28
TK OP-45 csd OP-25 nfc O-38 the3 O-14
a1ch O-25 csg OP-26 nfcw M-61 the3d O-16
a1chr M-44 css OP-27 nt M-58 the3dr M-34
a1dr O-28 cth M-65 nt O-35 the3r M-30
a1drr M-49 cth O-41 paramchk M-2 tnom M-71
a2ch M-47 dta M-63 phib M-14 tox M-62
a2ch O-26 etabet M-19 phib O-5 tox O-39
a2dr M-52 etabetacc M-21 phibd M-16 tr M-72
a2dr O-29 etard M-23 phibd O-6 tref M-5
a3ch M-48 etathe3 M-31 pwr OP-46 trise I-6
a3ch O-27 etathe3d M-35 rd O-9 type M-67
a3dr M-53 etathe3d O-17 rdw M-22 u OP-35
a3dr O-30 fknee OP-43 region I-4 vbds M-70
alp M-38 fug OP-39 rout OP-36 vbox M-69
alp O-19 gds OP-16 rth M-64 vddisat OP-13
ath M-66 gm OP-14 rth O-40 vdiseff OP-11
beff OP-38 gmb OP-15 sdibl M-40 vdissat OP-12
bet O-7 gmmos OP-40 sdibl O-21 vds OP-3
betacc O-8 iavl OP-2 sqrtsff OP-42 vearly OP-37
betaccw M-20 ids OP-1 sqrtsfw OP-41 vfb M-6
betw M-18 imax M-68 ssf M-43 vfb O-1
cbb OP-32 ko O-3 ssf O-24 vfbd M-8
cbd OP-29 kod O-4 sta1ch M-45 vfbd O-2
cbg OP-30 kodr M-12 sta1dr M-50 vgs OP-4
cbs OP-31 kor M-10 stphib M-15 vgt OP-9
cdb OP-20 lamd M-24 stphibd M-17 vp M-39
cdd OP-17 lamd O-10 stvfb M-7 vp O-20
cdg OP-18 level M-1 stvfbd M-9 vsb OP-5
cds OP-19 m I-5 swa1ch M-46 vth OP-8
cgb OP-24 mexp M-33 swa1dr M-51 vto OP-6
cgd OP-21 mexp O-15 swko M-11 vtod OP-10
cgdo O-33 mexpd M-37 swkod M-13 vts OP-7
cgdow M-56 mexpd O-18 swthe1 M-26 w I-2
cgg OP-22 mo M-42 swthe2 M-29 wd I-3
cgs OP-23 mo O-23 swthe3 M-32 wdeff OP-34
cgso O-34 msdibl M-41 swthe3d M-36 wdvar M-4
cgsow M-57 msdibl O-22 the1 O-11 weff OP-33
cox O-31 mult I-1 the1acc M-27 wvar M-3
coxd O-32 nfa O-36 the1acc O-12
coxdw M-55 nfaw M-59 the1r M-25
coxw M-54 nfb O-37 the2 O-13

MOS Model 31, Level 3100 (mos3100)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos3100 parameter=value ...

Model Parameters

1

level=3.1e+03

Transistor level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

ron=1

Ohmic resistance at zero bias.

7

rsat=1

Space charge resistance at zero bias.

8

vsat=10 V

Critical drain-source voltage for hot carriers.

9

psat=1

Velocity saturation coefficient.

10

vp=-1 V

Pinch off voltage at zero gate and substrate voltages.

11

tox=-1 m

Gate oxide thickness.

12

dch=1e+21 m-3

Doping level channel.

13

dsub=1e+21 m-3

Doping level substrate.

14

vsub=0.6 V

Substrate diffusion voltage.

15

vgap=1.2 V

Bandgap voltage channel.

16

cgate=0 F

Gate capacitance at zero bias.

17

csub=0 F

Substrate capacitance at zero bias.

18

tausc=0 s

Space charge transit time of the channel.

19

ach=0

Temperature coefficient resistivity of the channel.

20

achmod=0

Parameter to switch to extended temperature scaling.

21

achron=0

Temperature coefficient of ohmic resistance at zero bias.

22

achvsat=0

Temperature coefficient of critical drain-source voltage for hot carriers.

23

achrsat=0

Temperature coefficient of space charge resistance at zero bias.

24

tref=25 deg. C

Reference temperature.

25

dta=0 deg. C

Temperature offset of the device.

26

type=n

Transistor gender. Possible values are n and p.

27

imax=1000 A

Explosion current.

28

tnom (deg. C)

Alias of tnom.

29

tr (deg. C)

Alias of tnom.

30

simkitver=3.4

31

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain source current (including velocity saturation).

2

vds (V)

Drain source voltage.

3

vgs (V)

Gate source voltage.

4

vbs (V)

Bulk source voltage.

5

vp (V)

Channel pinch off voltage.

6

gm (A/V)

Transconductance (dIds/dVg).

7

gmb (A/V)

Bulk transconductance (dIds/dVb).

8

gds (A/V)

Output conductance (dIds/dVd).

9

qg (C)

Gate charge.

10

cgd (F)

Gate charge dependence on drain voltage (- dQg/dVd).

11

cgg (F)

Gate charge dependence on gate voltage (dQg/dVg).

12

cgs (F)

Gate charge dependence on source voltage (-dQg/dVs).

13

cgb (F)

Gate charge dependence on bulk voltage (-dQg/dVb).

14

qb (C)

Bulk charge.

15

cbd (F)

Bulk charge dependence on drain voltage (-dQb/dVd).

16

cbg (F)

Bulk charge dependence on gate voltage (-dQb/dVg).

17

cbs (F)

Bulk charge dependence on source voltage (-dQb/dVs).

18

cbb (F)

Bulk charge dependence on bulk voltage (dQb/dVb).

19

qd (C)

Drain charge.

20

cdd (F)

Drain charge dependence on drain voltage (dQd/dVd).

21

cdg (F)

Drain charge dependence on gate voltage (-dQd/dVg).

22

cds (F)

Drain charge dependence on source voltage (-dQd/dVs).

23

cdb (F)

Drain charge dependence on bulk voltage (-dQd/dVb).

24

qs (C)

Source charge.

25

csd (F)

Source charge dependence on drain voltage (-dQs/dVd).

26

csg (F)

Source charge dependence on gate voltage (-dQs/dVg).

27

css (F)

Source charge dependence on source voltage (dQs/dVs).

28

csb (F)

Source charge dependence on bulk voltage (-dQs/dVb).

29

u

Transistor gain (gm/gds).

30

rout ()

Small signal output resistance (1/gds).

31

vearly (V)

Equivalent early voltage (|Ids|/gds).

32

iohm (A)

Drain source current excluding velocity saturation.

33

ihc (A)

Critical current for velocity saturation.

34

ctype

Channel type (-1 for PMOS, +1 for NMOS).

35

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

ach M-26 csd OP-25 printscaled I-2 type M-33
achmod M-27 csg OP-26 psat M-16 u OP-29
achron M-28 css OP-27 qb OP-14 vballmsg M-9
achrsat M-30 csub M-24 qd OP-19 vbdbhigh M-6
achvsat M-29 ctype OP-34 qg OP-9 vbdblow M-5
cbb OP-18 dch M-19 qs OP-24 vbds M-4
cbd OP-15 dsub M-20 region I-4 vbox M-3
cbg OP-16 dta M-32 ron M-13 vbs OP-4
cbs OP-17 gds OP-8 rout OP-30 vbsbhigh M-8
cdb OP-23 gm OP-6 rsat M-14 vbsblow M-7
cdd OP-20 gmb OP-7 stop M-12 vds OP-2
cdg OP-21 ids OP-1 tausc M-25 vearly OP-31
cds OP-22 ihc OP-33 tdelay M-11 vgap M-22
cgate M-23 iohm OP-32 tempeff O-1 vgs OP-3
cgb OP-13 level M-1 tmin M-10 vp M-17
cgd OP-10 m I-5 tnom M-34 vp OP-5
cgg OP-11 meff O-2 tox M-18 vsat M-15
cgs OP-12 mos_region OP-35 tr M-35 vsub M-21
compatible M-36 mult I-1 tref M-31
csb OP-28 paramchk M-2 trise I-3

MOS Model 31, Level 3100 (mos3100t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1

mult=1

Number of devices in parallel.

2

printscaled=0

Print scaled parameter info if value not equal to zero.

3

trise=0 K

Difference between the local ambient and global ambient temperature.

4

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

5

m=1

Alias of mult.

6

mos_region=SUBTHRESHOLD

7

diode_region=ON

Model Definition

model modelName mos3100t parameter=value ...

Model Parameters

1

level=3.1e+03

Transistor level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

ron=1

Ohmic resistance at zero bias.

7

rsat=1

Space charge resistance at zero bias.

8

vsat=10 V

Critical drain-source voltage for hot carriers.

9

psat=1

Velocity saturation coefficient.

10

vp=-1 V

Pinch off voltage at zero gate and substrate voltages.

11

tox=-1 m

Gate oxide thickness.

12

dch=1e+21 m-3

Doping level channel.

13

dsub=1e+21 m-3

Doping level substrate.

14

vsub=0.6 V

Substrate diffusion voltage.

15

vgap=1.2 V

Bandgap voltage channel.

16

cgate=0 F

Gate capacitance at zero bias.

17

csub=0 F

Substrate capacitance at zero bias.

18

tausc=0 s

Space charge transit time of the channel.

19

ach=0

Temperature coefficient resistivity of the channel.

20

achmod=0

Parameter to switch to extended temperature scaling.

21

achron=0

Temperature coefficient of ohmic resistance at zero bias.

22

achvsat=0

Temperature coefficient of critical drain-source voltage for hot carriers.

23

achrsat=0

Temperature coefficient of space charge resistance at zero bias.

24

tref=25 deg. C

Reference temperature.

25

dta=0 deg. C

Temperature offset of the device.

26

rth=300 K/W

Thermal resistance.

27

cth=3e-09 J/K

Thermal capacitance.

28

ath=0

Temperature coefficient of the thermal resistance.

29

type=n

Transistor gender. Possible values are n and p.

30

imax=1000 A

Explosion current.

31

tnom (deg. C)

Alias of tnom.

32

tr (deg. C)

Alias of tnom.

33

simkitver=3.4

34

compatible=spectre

Make device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.

Output Parameters

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

Operating-Point Parameters

1

ids (A)

Drain source current (including velocity saturation).

2

vds (V)

Drain source voltage.

3

vgs (V)

Gate source voltage.

4

vbs (V)

Bulk source voltage.

5

vp (V)

Channel pinch off voltage.

6

gm (A/V)

Transconductance (dIds/dVg).

7

gmb (A/V)

Bulk transconductance (dIds/dVb).

8

gds (A/V)

Output conductance (dIds/dVd).

9

qg (C)

Gate charge.

10

cgd (F)

Gate charge dependence on drain voltage (- dQg/dVd).

11

cgg (F)

Gate charge dependence on gate voltage (dQg/dVg).

12

cgs (F)

Gate charge dependence on source voltage (-dQg/dVs).

13

cgb (F)

Gate charge dependence on bulk voltage (-dQg/dVb).

14

qb (C)

Bulk charge.

15

cbd (F)

Bulk charge dependence on drain voltage (-dQb/dVd).

16

cbg (F)

Bulk charge dependence on gate voltage (-dQb/dVg).

17

cbs (F)

Bulk charge dependence on source voltage (-dQb/dVs).

18

cbb (F)

Bulk charge dependence on bulk voltage (dQb/dVb).

19

qd (C)

Drain charge.

20

cdd (F)

Drain charge dependence on drain voltage (dQd/dVd).

21

cdg (F)

Drain charge dependence on gate voltage (-dQd/dVg).

22

cds (F)

Drain charge dependence on source voltage (-dQd/dVs).

23

cdb (F)

Drain charge dependence on bulk voltage (-dQd/dVb).

24

qs (C)

Source charge.

25

csd (F)

Source charge dependence on drain voltage (-dQs/dVd).

26

csg (F)

Source charge dependence on gate voltage (-dQs/dVg).

27

css (F)

Source charge dependence on source voltage (dQs/dVs).

28

csb (F)

Source charge dependence on bulk voltage (-dQs/dVb).

29

u

Transistor gain (gm/gds).

30

rout ()

Small signal output resistance (1/gds).

31

vearly (V)

Equivalent early voltage (|Ids|/gds).

32

iohm (A)

Drain source current excluding velocity saturation.

33

ihc (A)

Critical current for velocity saturation.

34

Pdiss (W)

Dissipation.

35

TK (K)

Actual temperature.

36

ctype

Channel type (-1 for PMOS, +1 for NMOS).

37

pwr (W)

Power.

38

mos_region

MOS region.
Possible values are off, sat, triode, and subth.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

Pdiss OP-34 compatible M-39 mult I-1 tr M-38
TK OP-35 csb OP-28 paramchk M-2 tref M-31
ach M-26 csd OP-25 printscaled I-2 trise I-3
achmod M-27 csg OP-26 psat M-16 type M-36
achron M-28 css OP-27 pwr OP-37 u OP-29
achrsat M-30 csub M-24 qb OP-14 vballmsg M-9
achvsat M-29 cth M-34 qd OP-19 vbdbhigh M-6
ath M-35 ctype OP-36 qg OP-9 vbdblow M-5
cbb OP-18 dch M-19 qs OP-24 vbds M-4
cbd OP-15 dsub M-20 region I-4 vbox M-3
cbg OP-16 dta M-32 ron M-13 vbs OP-4
cbs OP-17 gds OP-8 rout OP-30 vbsbhigh M-8
cdb OP-23 gm OP-6 rsat M-14 vbsblow M-7
cdd OP-20 gmb OP-7 rth M-33 vds OP-2
cdg OP-21 ids OP-1 stop M-12 vearly OP-31
cds OP-22 ihc OP-33 tausc M-25 vgap M-22
cgate M-23 iohm OP-32 tdelay M-11 vgs OP-3
cgb OP-13 level M-1 tempeff O-1 vp M-17
cgd OP-10 m I-5 tmin M-10 vp OP-5
cgg OP-11 meff O-2 tnom M-37 vsat M-15
cgs OP-12 mos_region OP-38 tox M-18 vsub M-21


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