11 Philips Models

This chapter describes the component statements for the following models:

Diode Level 500 (dio500)

The dio500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is described in the Philips Bipolar Modelbook (Dec.93) as Diode level 500. Information on how to obtain this document can be found on Source Link by searching for Philips.

In extension to the model book description a minimum conductance gmin is inserted between the diode nodes to aid convergence. The value of gmin is set by an options statement, default is gmin = 1.0e-12 S.

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the diode are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor, and a warning is printed.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

d1 (pnode 0) phdiode area=2

Sample Model Statement

model phdiode dio500 is=3.5e-12 rs=26.3 n=2.7 imax=1e20 vlc=1.8 vbr=9.63 cj=2.65e-11 dta=12.88 tau=7.5e-10 tnom=25

Instance Definition

Name  a  k ModelName parameter=value ...

Instance Parameters

1	`area=1.0`	Multiplication factor.
2	`mult`	Alias of area factor.
3	`m=1.0`	Multiplicity factor.
4	`region=fwd`	Estimated DC operating region, which is used as a convergence aid. Possible values are `fwd`, `rev` or `brk`.
5	`trise= (K)`	Temperature rise from ambient

Model Definition

model modelName dio500 parameter=value ...

Model Parameters

1	`is=7.13e-13 A`	Saturation current.
2	`n=1.044`	Junction emission coefficient.
3	`vlc=0.0 V`	Voltage dependence at low forward currents.
4	`vbr=7.459 V`	Breakdown voltage.
5	`emvbr=1.36e+06 V/cm`
		Electric field at breakdown.
6	`csrh=7.44e-07 A/cm`
		Shockley-Read-Hall generation.
7	`cbbt=3.255 A/V`	Band to band tunneling.
8	`ctat=3.31e-06 A/cm`
		Trap assisted tunneling.
9	`rs=0.0` Ω	Series resistance.
10	`tau=500.0e-12 s`	Transit time.
11	`cj=7.0e-12 F`	Zero-bias depletion capacitance.
12	`vd=0.9 V`	Diffusion voltage.
13	`p=0.4`	Grading coefficient.
14	`tref (C)`	Reference temperature. Default set by option `tnom`.
15	`tnom (C)`	Alias of `tref`.
16	`tr (C)`	Alias of `tref`.
17	`vg=1.206 V`	Bandgap voltage.
18	`ptrs=0.0`	Power for temperature dependence of `rs`.
19	`kf=0.0`	Flickernoise coefficient.
20	`af=1.0`	Flickernoise exponent.
21	`dta=0.0 K`	Difference between device temperature and ambient temperature.
22	`trise (K)`	Alias of `dta`.
23	`imax=1.0 A`	Explosion current.

Operating-Point Parameters

1	`vak (V)`	Diode voltage, measured from anode to cathode (including `rs`).
2	`id (A)`	Total resistive diode current.
3	`qd (Coul)`	Diffusion charge.
4	`qt (Coul)`	Depletion charge.
5	`rst (`Ω`)`	Series resistance (temperature updated).
6	`rl (`Ω`)`	AC linearized resistance.
7	`cl (F)`	AC linearized capacitance.
8	`ctotal (F)`	AC linearized capacitance.
9	`lx5 (F)`	AC linearized capacitance.
10	`pwr (W)`	Power dissipation.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

af M-20	id OP-2	pwr OP-10	tref M-14
area I-1	imax M-23	qd OP-3	trise I-5
cbbt M-7	is M-1	qt OP-4	trise M-22
cj M-11	kf M-19	region I-4	vak OP-1
cl OP-7	lx5 OP-9	rl OP-6	vbr M-4
csrh M-6	m I-3	rs M-9	vd M-12
ctat M-8	mult I-2	rst OP-5	vg M-17
ctotal OP-8	n M-2	tau M-10	vlc M-3
dta M-21	p M-13	tnom M-15
emvbr M-5	ptrs M-18	tr M-16

Lateral PNP Transistor (bjt301)

The bjt301 model provides an extensive description of a lateral integrated circuit junction-isolated PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.93) as TPL level 301.

In extension to the model book description a minimum conductance gmin is inserted between the internal base and internal collector node, between the internal base and the internal emitter node, and between the external base and the substrate node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

q2 (minus net3 vcc) pnp_mod region=fwd area=1 m=1

Sample Model Statement:

model pnp_mod bjt301 type=pnp struct=lateral is=1e-14 bf=85 ilf=11e-9 ikf=95e-6 re=3.2 cje=0.352e-12

Instance Definition

Name  c  b  e  [s] ModelName parameter=value ...

Instance Parameters

1	`area=1`	Area factor.
2	`mult=1`	Alias of area factor.
3	`m=1`	Multiplicity factor.
4	`region=fwd`	Estimated DC operating region; used as a convergence aid. Possible values are `off`, `fwd`, `rev`, and `sat`.
5	`trise=0.0 K`	Temperature rise from ambient.

Model Definition

model modelName bjt301 parameter=value ...

Model Parameters

Structural parameters

1	`type=pnp`	Transistor type. Possible values are `pnp` or `pnpl`.
2	`struct=lateral`	Transistor structure. Possible values are `lateral`.

Current parameters

3	`is=1.0e-15 A`	Saturation current.
4	`imax=1.0 A`	Explosion current.
5	`bf=100.0 A/A`	Ideal forward common-emitter current gain (beta).
6	`ilf=10.0e-9 A`	Low-level knee-current of forward beta.
7	`nlf=2.0`	Emission coefficient of non-ideal forward base current.
8	`ikf=100.0e-6 A`	High-injection knee-current of forward beta.
9	`nhf=1.0`	Basewidening exponent.
10	`veaf=50.0 V`	Early voltage related to collector junction.
11	`br=10.0 A/A`	Ideal reverse common-collector current gain (beta).
12	`ilr=10.0e-9 A`	Low-level knee-current of reverse beta.
13	`nlr=2.0`	Emission coefficient of non-ideal reverse base current.
14	`ikr=100.0e-6 A`	High-injection knee-current of reverse beta.
15	`iks=100.0e-6 A`	High-injection current of substrate effect.
16	`xcs=1.0`	Current fraction of c-b-s transistor.
17	`xes=0.01`	Current fraction of e-b-s transistor.

Parasitic resistance parameters

18	`rc=1.0` Ω	Collector resistance.
19	`rbc=10.0` Ω	Constant part of base resistance.
20	`rbv=10.0` Ω	Variable part of base resistance.
21	`re=1.0` Ω	Emitter series resistance.

Junction capacitance parameters

22	`taub=25.0e-9 s`	Forward transit time related to neutral base.
23	`taune=1.0e-9 s`	Forward transit time related to neutral emitter in neutral e-b region.
24	`mtau=1.0`	Coefficient of current dependence of taune.
25	`cje=100.0e-15 F`	Zero bias emitter-base depletion capacitance.
26	`vde=0.55 V`	Emitter-base diffusion voltage.
27	`pe=0.333`	Emitter-base grading coefficient.
28	`taur=100.0e-9 s`	Ideal reverse transit time.
29	`cjc=200.0e-15 F`	Zero bias collector-base depletion capacitance.
30	`vdc=0.55 V`	Collector-base diffusion voltage.
31	`pc=0.333`	Collector-base grading coefficient.
32	`cjs=1.0e-12 F`	Zero bias substrate junction depletion capacitance.
33	`vds=0.55 V`	Substrate junction diffusion voltage.
34	`ps=0.333`	Substrate junction grading coefficient.
35	`exphi=0.3`	Excess phase shift.
36	`fc=0.95`	Coefficient for forward bias capacitance.

Temperature effects parameters

37	`tref (C)`	Reference temperature. Default set by option `tnom`.
38	`tnom (C)`	Alias of tref. Default set by option `tnom`.
39	`dta=0.0 K`	Difference between device temperature and ambient temperature.
40	`trise=0.0 K`	Alias of dta.
41	`ptbf=0.0`	Power for temperature dependence of `bf`.
42	`ptbr=0.0`	Power for temperature dependence of `br`.
43	`ptrc=0.0`	Power for temperature dependence of `rc`.
44	`ptrb=0.0`	Power for temperature dependence of `rbc` and `rbv`.
45	`vg=1.2 V`	Band-gap voltage.
46	`pt=1.2`	Power for temperature dependence of diffusion coefficient.

Noise model parameters

47	`kf=0.0`	Flickernoise coefficient.
48	`af=1.0`	Flickernoise exponent.

Operating-Point Parameters

1	`ib (A)`	Base current.
2	`ic (A)`	Collector current.
3	`ie (A)`	Emitter current.
4	`isub (A)`	Substrate current.
5	`vbe (V)`	Base-emitter voltage.
6	`vbc (V)`	Base-collector voltage.
7	`vce (V)`	Collector-emitter voltage.
8	`vsubj (V)`	Substrate voltage.
9	`betadc (A/A)`	Ratio of DC collector current to DC Base current.
10	`rb (`Ω`)`	Base resistance at operating point.
11	`rc (`Ω`)`	Collector resistance at operating point.
12	`re (`Ω`)`	Emitter resistance at operating point.
13	`icb (A)`	Collector-Base current.
14	`ieb (A)`	Emitter-Base current.
15	`icsub (A)`	Collector-Substrate current.
16	`iesub (A)`	Emitter-Substrate current.
17	`pwr (W)`	Power.
18	`gpi (S)`	Conductance emitter-base junction.
19	`gmu (S)`	Conductance collector-base junction.
20	`gf (S)`	Forward transconductance.
21	`gr (S)`	Reverse transconductance.
22	`gs (S)`	Conductance substrate-base junction.
23	`g3 (S)`	Transconductance (parasitic PNP) c-b-s transistor.
24	`g4 (S)`	Transconductance (parasitic PNP) e-b-s transistor.
25	`ced (F)`	Emitter diffusion capacitance.
26	`ccd (F)`	Collector diffusion capacitance.
27	`cet (F)`	Emitter junction depletion capacitance.
28	`cct (F)`	Collector junction depletion capacitance.
29	`cst (F)`	Substrate junction depletion capacitance.
30	`betaac (A/A)`	Small-signal common-emitter current gain.
31	`ft (Hz)`	Unity small-signal current-gain frequency.

Parameter Index

af M-48	gmu OP-19	mtau M-24	region I-4
area I-1	gpi OP-18	mult I-2	struct M-2
betaac OP-30	gr OP-21	nhf M-9	taub M-22
betadc OP-9	gs OP-22	nlf M-7	taune M-23
bf M-5	ib OP-1	nlr M-13	taur M-28
br M-11	ic OP-2	pc M-31	tnom M-38
ccd OP-26	icb OP-13	pe M-27	tref M-37
cct OP-28	icsub OP-15	ps M-34	trise I-5
ced OP-25	ie OP-3	pt M-46	trise M-40
cet OP-27	ieb OP-14	ptbf M-41	type M-1
cjc M-29	iesub OP-16	ptbr M-42	vbc OP-6
cje M-25	ikf M-8	ptrb M-44	vbe OP-5
cjs M-32	ikr M-14	ptrc M-43	vce OP-7
cst OP-29	iks M-15	pwr OP-17	vdc M-30
dta M-39	ilf M-6	rb OP-10	vde M-26
exphi M-35	ilr M-12	rbc M-19	vds M-33
fc M-36	imax M-4	rbv M-20	veaf M-10
ft OP-31	is M-3	rc M-18	vg M-45
g3 OP-23	isub OP-4	rc OP-11	vsubj OP-8
g4 OP-24	kf M-47	re M-21	xcs M-16
gf OP-20	m I-3	re OP-12	xes M-17

Lateral PNP Transistor (bjt500)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Area factor.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt500 parameter=value ...

Model Parameters

1	`level=500`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`is=1.8e-16 A`	Collector-emitter saturation current.
4	`bf=131 A`	Ideal forward common-emitter current gain.
5	`ibf=2.6e-14 A`	Saturation current of non-ideal forward base current.
6	`vlf=0.54 V`	Cross-over voltage of non-ideal forward base current.
7	`ik=0.00011 A`	High injection knee current.
8	`xifv=0.43`	Vertical fraction of forward current.
9	`eafl=20.5 V`	Early voltage of the lateral forward current component.
10	`eafv=75 V`	Early voltage of the vertical forward current component.
11	`br=25 A`	Ideal reverse common-emitter current gain.
12	`ibr=1.2e-13 A`	Saturation current of non-ideal reverse base current.
13	`vlr=0.48 V`	Cross-over voltage of non-ideal reverse base current.
14	`xirv=0.43`	Vertical fraction of reverse current.
15	`earl=13.1 V`	Early voltage of the lateral reverse current component.
16	`earv=104 V`	Early voltage of the vertical reverse current component.
17	`xes=0.0027`	Ratio between saturation current of e-b-s transistor and e-b-c transistor.
18	`xhes=0.7`	Fraction of substrate current of e-b-s transistor subject to high injection.
19	`xcs=3`	Ratio between saturation current of c-b-s transistor and c-b-e transistor.
20	`xhcs=1`	Fraction of substrate current of c-b-s transistor subject to high injection.
21	`iss=4e-13 A`	Saturation current of substrate-base diode.
22	`rcex=5` Ω	External part of the collector resistance.
23	`rcin=47` Ω	Internal part of the collector resistance.
24	`rbcc=10` Ω	Constant part of the base resistance `rbc`.
25	`rbcv=10` Ω	Variable part of the base resistance `rbc`.
26	`rbec=10` Ω	Constant part of the base resistance `rbe`.
27	`rbev=50` Ω	Variable part of the base resistance `rbe`.
28	`reex=27` Ω	External part of the emitter resistance.
29	`rein=66` Ω	Internal part of the emitter resistance.
30	`rsb=1e+15` Ω	Substrate-base leakage resistance.
31	`tlat=2.4e-09 s`	Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.
32	`tfvr=3e-08 s`	Low injection forward transit time due to charge stored in the epilayer under the emitter.
33	`tfn=2e-10 s`	Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.
34	`cje=6.1e-14 F`	Zero-bias emitter-base depletion capacitance.
35	`vde=0.52 V`	Emitter-base diffusion voltage.
36	`pe=0.3`	Emitter-base grading coefficient.
37	`trvr=1e-09 s`	Low injection reverse transit time due to charge stored in the epilayer under the collector.
38	`trn=3e-09 s`	Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.
39	`cjc=3.9e-13 F`	Zero-bias collector-base depletion capacitance.
40	`vdc=0.57 V`	Collector-base diffusion voltage.
41	`pc=0.36`	Collector-base grading coefficient.
42	`cjs=1.3e-12 F`	Zero-bias substrate-base depletion capacitance.
43	`vds=0.52 V`	Substrate-base diffusion voltage.
44	`ps=0.35`	Substrate-base grading coefficient.
45	`tref=25 C`	Reference temperature. Default set by option `tnom`.
46	`dta=0 K`	Difference between the device temperature and the ambient analysis temperature.
47	`vgeb=1.21 V`	Bandgap voltage of the emitter-base depletion region.
48	`vgcb=1.21 V`	Bandgap voltage of the collector-base depletion region.
49	`vgsb=1.21 V`	Bandgap voltage of the substrate-base depletion region.
50	`vgb=1.21 V`	Bandgap voltage of the base between emitter and collector.
51	`vge=1.21 V`	Bandgap voltage of the emitter.
52	`vgje=1.12 V`	Bandgap voltage recombination emitter-base junction.
53	`ae=4.48`	Temperature coefficient of `bf`.
54	`spb=2.85`	SC.
55	`snb=2.6`	Temperature coefficient of the epitaxial base electron mobility.
56	`snbn=0.3`	Temperature coefficient of buried layer electron mobility.
57	`spe=0.73`	Temperature coefficient of emitter hole mobility.
58	`spc=0.73`	Temperature coefficient of collector hole mobility.
59	`sx=1`	Temperature coefficient of combined minority carrier mobility in emitter and buried layer.
60	`kf=0`	Flickernoise coefficient.
61	`af=1`	Flickernoise exponent.
62	`exphi=0`	Not used in model bjt500.
63	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
64	`imax=1000 A`	Explosion current.
65	`tnom (C)`	alias of tnom.
66	`tr (C)`	alias of tnom.
67	`simkitver=3.4`
68	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ic (A)`	External DC collector current.
2	`ib (A)`	External DC base current.
3	`ie (A)`	Resistive emitter current.
4	`isub (A)`	Resistive substrate current.
5	`iflat (A)`	Lateral forward current.
6	`irlat (A)`	Lateral reverse current.
7	`ifver (A)`	Vertical forward current.
8	`irver (A)`	Vertical reverse current.
9	`ire (A)`	ideal forward base current.
10	`ile (A)`	Non-ideal forward base current.
11	`ise (A)`	Forward substrate current.
12	`irc (A)`	Ideal reverse base current.
13	`ilc (A)`	Non-ideal reverse base current.
14	`isc (A)`	Reverse substrate current.
15	`isf (A)`	Reverse leakage current of the substrate-base junction.
16	`ip (A)`	Main current.
17	`betadc`	External DC current gain Ic/Ib.
18	`vbc (V)`	Base-collector voltage.
19	`vbe (V)`	Base-emitter voltage.
20	`vce (V)`	Collector-emitter voltage.
21	`vsb (V)`	Substrate-base voltage.
22	`rcex (`Ω`)`	External part of the collector resistance.
23	`rcin (`Ω`)`	Internal part of the collector resistance.
24	`reex (`Ω`)`	External part of the emitter resistance.
25	`rein (`Ω`)`	Internal part of the emitter resistance.
26	`rbc (`Ω`)`	Base resistance under the collector.
27	`rbe (`Ω`)`	Base resistance under the emitter.
28	`rsb (`Ω`)`	Ohmic leakage across the substrate-base junction.
29	`pwr (W)`	Power.
30	`gfl (S)`	Forward conductance, lateral path.
31	`grl (S)`	Reverse conductance, lateral path.
32	`g11 (S)`	Forward conductance, vertical path.
33	`g12 (S)`	Collector Early-effect on Ifver.
34	`g21 (S)`	Emitter Early-effect on Irver.
35	`g22 (S)`	Reverse conductance, vertical path.
36	`gpiv (S)`	Conductance emitter-base junction.
37	`gmuv (S)`	Conductance collector-base junction.
38	`gbe (S)`	Emitter-side: base conductance B1-B.
39	`gibe (S)`	Emitter Early-effect on Ib1b.
40	`gbc (S)`	Collector-side: base conductance B2-B.
41	`gibc (S)`	Collector Early-effect on Ib2b.
42	`gise (S)`	Transconductance (parasitic PNP) e-b-s transistor.
43	`gisc (S)`	Transconductance (parasitic PNP) c-b-s transistor.
44	`gsb (S)`	Conductance substrate-base junction.
45	`cpil (F)`	Forward diffusion capacitance, lateral path.
46	`cipil (F)`	Collector Early-effect on Qflat.
47	`cpiv (F)`	Forward total capacitance, vertical path.
48	`cmul (F)`	Reverse diffusion capacitance, lateral path.
49	`cimul (F)`	Emitter Early-effect on Qrlat.
50	`cmuv (F)`	Reverse total capacitance, vertical path.
51	`csb (F)`	Total capacitance substrate-base junction.
52	`irbe (A)`	Ideal total forward base current.
53	`irbc (A)`	Ideal total reverse base current.
54	`irsb (A)`	Substrate base leakage resistance current.
55	`jtype`	type: +1=npn and -1=pnp.

Parameter Index

ae M-53	gise OP-42	m I-5	tfn M-33
af M-61	gmuv OP-37	meff O-2	tfvr M-32
area I-6	gpiv OP-36	mult I-1	tlat M-31
betadc OP-17	grl OP-31	paramchk M-2	tnom M-65
bf M-4	gsb OP-44	pc M-41	tr M-66
br M-11	ib OP-2	pe M-36	tref M-45
cimul OP-49	ibf M-5	printscaled I-2	trise I-3
cipil OP-46	ibr M-12	ps M-44	trn M-38
cjc M-39	ic OP-1	pwr OP-29	trvr M-37
cje M-34	ie OP-3	rbc OP-26	type M-63
cjs M-42	iflat OP-5	rbcc M-24	vbc OP-18
cmul OP-48	ifver OP-7	rbcv M-25	vbe OP-19
cmuv OP-50	ik M-7	rbe OP-27	vce OP-20
compatible M-67	ilc OP-13	rbec M-26	vdc M-40
cpil OP-45	ile OP-10	rbev M-27	vde M-35
cpiv OP-47	imax M-64	rcex M-22	vds M-43
csb OP-51	ip OP-16	rcex OP-22	vgb M-50
dta M-46	irbc OP-53	rcin M-23	vgcb M-48
eafl M-9	irbe OP-52	rcin OP-23	vge M-51
eafv M-10	irc OP-12	reex M-28	vgeb M-47
earl M-15	ire OP-9	reex OP-24	vgje M-52
earv M-16	irlat OP-6	region I-4	vgsb M-49
exphi M-62	irsb OP-54	rein M-29	vlf M-6
g11 OP-32	irver OP-8	rein OP-25	vlr M-13
g12 OP-33	is M-3	rsb M-30	vsb OP-21
g21 OP-34	isc OP-14	rsb OP-28	xcs M-19
g22 OP-35	ise OP-11	snb M-55	xes M-17
gbc OP-40	isf OP-15	snbn M-56	xhcs M-20
gbe OP-38	iss M-21	spb M-54	xhes M-18
gfl OP-30	isub OP-4	spc M-58	xifv M-8
gibc OP-41	jtype OP-55	spe M-57	xirv M-14
gibe OP-39	kf M-60	sx M-59
gisc OP-43	level M-1	tempeff O-1

Lateral PNP Transistor (bjt500t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Area factor.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt500t parameter=value ...

Model Parameters

1	`level=500`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`is=1.8e-16 A`	Collector-emitter saturation current.
4	`bf=131 A`	Ideal forward common-emitter current gain.
5	`ibf=2.6e-14 A`	Saturation current of non-ideal forward base current.
6	`vlf=0.54 V`	Cross-over voltage of non-ideal forward base current.
7	`ik=0.00011 A`	High injection knee current.
8	`xifv=0.43`	Vertical fraction of forward current.
9	`eafl=20.5 V`	Early voltage of the lateral forward current component.
10	`eafv=75 V`	Early voltage of the vertical forward current component.
11	`br=25 A`	Ideal reverse common-emitter current gain.
12	`ibr=1.2e-13 A`	Saturation current of non-ideal reverse base current.
13	`vlr=0.48 V`	Cross-over voltage of non-ideal reverse base current.
14	`xirv=0.43`	Vertical fraction of reverse current.
15	`earl=13.1 V`	Early voltage of the lateral reverse current component.
16	`earv=104 V`	Early voltage of the vertical reverse current component.
17	`xes=0.0027`	Ratio between saturation current of e-b-s transistor and e-b-c transistor.
18	`xhes=0.7`	Fraction of substrate current of e-b-s transistor subject to high injection.
19	`xcs=3`	Ratio between saturation current of c-b-s transistor and c-b-e transistor.
20	`xhcs=1`	Fraction of substrate current of c-b-s transistor subject to high injection.
21	`iss=4e-13 A`	Saturation current of substrate-base diode.
22	`rcex=5` Ω	External part of the collector resistance.
23	`rcin=47` Ω	Internal part of the collector resistance.
24	`rbcc=10` Ω	Constant part of the base resistance `rbc`.
25	`rbcv=10` Ω	Variable part of the base resistance `rbc`.
26	`rbec=10` Ω	Constant part of the base resistance `rbe`.
27	`rbev=50` Ω	Variable part of the base resistance `rbe`.
28	`reex=27` Ω	External part of the emitter resistance.
29	`rein=66` Ω	Internal part of the emitter resistance.
30	`rsb=1e+15` Ω	Substrate-base leakage resistance.
31	`tlat=2.4e-09 s`	Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.
32	`tfvr=3e-08 s`	Low injection forward transit time due to charge stored in the epilayer under the emitter.
33	`tfn=2e-10 s`	Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.
34	`cje=6.1e-14 F`	Zero-bias emitter-base depletion capacitance.
35	`vde=0.52 V`	Emitter-base diffusion voltage.
36	`pe=0.3`	Emitter-base grading coefficient.
37	`trvr=1e-09 s`	Low injection reverse transit time due to charge stored in the epilayer under the collector.
38	`trn=3e-09 s`	Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.
39	`cjc=3.9e-13 F`	Zero-bias collector-base depletion capacitance.
40	`vdc=0.57 V`	Collector-base diffusion voltage.
41	`pc=0.36`	Collector-base grading coefficient.
42	`cjs=1.3e-12 F`	Zero-bias substrate-base depletion capacitance.
43	`vds=0.52 V`	Substrate-base diffusion voltage.
44	`ps=0.35`	Substrate-base grading coefficient.
45	`tref=25 C`	Reference temperature. Default set by option `tnom`.
46	`dta=0 K`	Difference between the device temperature and the ambient analysis temperature.
47	`vgeb=1.21 V`	Bandgap voltage of the emitter-base depletion region.
48	`vgcb=1.21 V`	Bandgap voltage of the collector-base depletion region.
49	`vgsb=1.21 V`	Bandgap voltage of the substrate-base depletion region.
50	`vgb=1.21 V`	Bandgap voltage of the base between emitter and collector.
51	`vge=1.21 V`	Bandgap voltage of the emitter.
52	`vgje=1.12 V`	Bandgap voltage recombination emitter-base junction.
53	`ae=4.48`	Temperature coefficient of `bf`.
54	`spb=2.85`	SC.
55	`snb=2.6`	Temperature coefficient of the epitaxial base electron mobility.
56	`snbn=0.3`	Temperature coefficient of buried layer electron mobility.
57	`spe=0.73`	Temperature coefficient of emitter hole mobility.
58	`spc=0.73`	Temperature coefficient of collector hole mobility.
59	`sx=1`	Temperature coefficient of combined minority carrier mobility in emitter and buried layer.
60	`kf=0`	Flickernoise coefficient.
61	`af=1`	Flickernoise exponent.
62	`exphi=0`	Not used in model bjt500.
63	`rth=300 K/W`	Thermal resistance.
64	`cth=3e-09 J/K`	Thermal capacitance.
65	`ath=0`	Temperature coefficient of the thermal resistance.
66	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
67	`imax=1000 A`	Explosion current.
68	`tnom (C)`	alias of tnom.
69	`tr (C)`	alias of tnom.
70	`simkitver=3.4`
71	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ic (A)`	External DC collector current.
2	`ib (A)`	External DC base current.
3	`ie (A)`	Resistive emitter current.
4	`isub (A)`	Resistive substrate current.
5	`iflat (A)`	Lateral forward current.
6	`irlat (A)`	Lateral reverse current.
7	`ifver (A)`	Vertical forward current.
8	`irver (A)`	Vertical reverse current.
9	`ire (A)`	ideal forward base current.
10	`ile (A)`	Non-ideal forward base current.
11	`ise (A)`	Forward substrate current.
12	`irc (A)`	Ideal reverse base current.
13	`ilc (A)`	Non-ideal reverse base current.
14	`isc (A)`	Reverse substrate current.
15	`isf (A)`	Reverse leakage current of the substrate-base junction.
16	`ip (A)`	Main current.
17	`betadc`	External DC current gain Ic/Ib.
18	`vbc (V)`	Base-collector voltage.
19	`vbe (V)`	Base-emitter voltage.
20	`vce (V)`	Collector-emitter voltage.
21	`vsb (V)`	Substrate-base voltage.
22	`rcex (`Ω`)`	External part of the collector resistance.
23	`rcin (`Ω`)`	Internal part of the collector resistance.
24	`reex (`Ω`)`	External part of the emitter resistance.
25	`rein (`Ω`)`	Internal part of the emitter resistance.
26	`rbc (`Ω`)`	Base resistance under the collector.
27	`rbe (`Ω`)`	Base resistance under the emitter.
28	`rsb (`Ω`)`	Ohmic leakage across the substrate-base junction.
29	`pwr (W)`	Power.
30	`gfl (S)`	Forward conductance, lateral path.
31	`grl (S)`	Reverse conductance, lateral path.
32	`g11 (S)`	Forward conductance, vertical path.
33	`g12 (S)`	Collector Early-effect on Ifver.
34	`g21 (S)`	Emitter Early-effect on Irver.
35	`g22 (S)`	Reverse conductance, vertical path.
36	`gpiv (S)`	Conductance emitter-base junction.
37	`gmuv (S)`	Conductance collector-base junction.
38	`gbe (S)`	Emitter-side: base conductance B1-B.
39	`gibe (S)`	Emitter Early-effect on Ib1b.
40	`gbc (S)`	Collector-side: base conductance B2-B.
41	`gibc (S)`	Collector Early-effect on Ib2b.
42	`gise (S)`	Transconductance (parasitic PNP) e-b-s transistor.
43	`gisc (S)`	Transconductance (parasitic PNP) c-b-s transistor.
44	`gsb (S)`	Conductance substrate-base junction.
45	`cpil (F)`	Forward diffusion capacitance, lateral path.
46	`cipil (F)`	Collector Early-effect on Qflat.
47	`cpiv (F)`	Forward total capacitance, vertical path.
48	`cmul (F)`	Reverse diffusion capacitance, lateral path.
49	`cimul (F)`	Emitter Early-effect on Qrlat.
50	`cmuv (F)`	Reverse total capacitance, vertical path.
51	`csb (F)`	Total capacitance substrate-base junction.
52	`irbe (A)`	Ideal total forward base current.
53	`irbc (A)`	Ideal total reverse base current.
54	`irsb (A)`	Substrate base leakage resistance current.
55	`Pdiss (W)`	Dissipation.
56	`TK (K)`	Actual device temperature.
57	`jtype`	Type +1=npn and -1=pnp.

Parameter Index

Pdiss OP-55	gibc OP-41	kf M-60	sx M-59
TK OP-56	gibe OP-39	level M-1	tempeff O-1
ae M-53	gisc OP-43	m I-5	tfn M-33
af M-61	gise OP-42	meff O-2	tfvr M-32
area I-6	gmuv OP-37	mult I-1	tlat M-31
ath M-65	gpiv OP-36	paramchk M-2	tnom M-68
betadc OP-17	grl OP-31	pc M-41	tr M-69
bf M-4	gsb OP-44	pe M-36	tref M-45
br M-11	ib OP-2	printscaled I-2	trise I-3
cimul OP-49	ibf M-5	ps M-44	trn M-38
cipil OP-46	ibr M-12	pwr OP-29	trvr M-37
cjc M-39	ic OP-1	rbc OP-26	type M-66
cje M-34	ie OP-3	rbcc M-24	vbc OP-18
cjs M-42	iflat OP-5	rbcv M-25	vbe OP-19
cmul OP-48	ifver OP-7	rbe OP-27	vce OP-20
cmuv OP-50	ik M-7	rbec M-26	vdc M-40
compatible M-70	ilc OP-13	rbev M-27	vde M-35
cpil OP-45	ile OP-10	rcex M-22	vds M-43
cpiv OP-47	imax M-67	rcex OP-22	vgb M-50
csb OP-51	ip OP-16	rcin M-23	vgcb M-48
cth M-64	irbc OP-53	rcin OP-23	vge M-51
dta M-46	irbe OP-52	reex M-28	vgeb M-47
eafl M-9	irc OP-12	reex OP-24	vgje M-52
eafv M-10	ire OP-9	region I-4	vgsb M-49
earl M-15	irlat OP-6	rein M-29	vlf M-6
earv M-16	irsb OP-54	rein OP-25	vlr M-13
exphi M-62	irver OP-8	rsb M-30	vsb OP-21
g11 OP-32	is M-3	rsb OP-28	xcs M-19
g12 OP-33	isc OP-14	rth M-63	xes M-17
g21 OP-34	ise OP-11	snb M-55	xhcs M-20
g22 OP-35	isf OP-15	snbn M-56	xhes M-18
gbc OP-40	iss M-21	spb M-54	xifv M-8
gbe OP-38	isub OP-4	spc M-58	xirv M-14
gfl OP-30	jtype OP-57	spe M-57

Vertical NPN/PNP Transistor (bjt503)

The bjt503 model provides a detailed description of a vertical integrated NPN and PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.95) as TN/TNS and TP/TPS level 503.

The NPN is also described in Nat.Lab. Unclassified Report Nr. 006/94 as Mextram Bipolar Transistor Model. Information on how to obtain this document can be found on Source Link by searching for Philips.

In addition to the model description a level parameter is added. Via the level parameter the user can switch between Philips Bipolar Modelbook (Dec.95) and Philips Bipolar Modelbook (Dec.94).

The descriptions of the operating point derivatives are given for the NPN type. For the PNP type the terminal voltage in the descriptions has to be exchanged. E.g.:

NPN: gx = dIn/dVb2e1

PNP: gx = dIn/dVe1b2

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

q4 (vcc net3 minus) npn_mod region=fwd m=1 mult=1

Sample Model Statement:

model npn_mod bjt503 type=npn level=2 exmod=1 is=1e-14 bf=85 ik=95e-6 rbc=50 cje=0.352e-12

Instance Definition

Name  c  b  e  [s] ModelName parameter=value ...

Instance Parameters

1	`area=1`	Area factor.
2	`mult=1`	Alias of area factor.
3	`m=1`	Multiplication factor.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `fwd`, `rev`, and `sat`.
5	`trise=0.0 K`	Temperature rise from ambient.
6	`lv1=1`
7	`lv4=1`

Model Definition

model modelName bjt503 parameter=value ...

Model Parameters

1	`type=npn`	Transistor type. Possible values are `npn`, `npnv`, `pnp`, and `pnpv`.
2	`level=2.0`	Transistor Level. Possible values are `1` (Philips Bipolar Modelbook Dec.94) or `2` (Philips Bipolar Modelbook Dec.95).
3	`exmod=0`	Flag for extended modeling of the reverse current gain.
4	`exphi=0`	Flag for distributed high frequency effects.
5	`exavl=1`	Flag for extended modeling of avalanche currents.
6	`is=5.0e-17 A`	Collector-emitter saturation current.
7	`bf=140.0 A/A`	Ideal forward current gain.
8	`xibi=0.0`	Fraction of ideal base current that belongs to the sidewall.
9	`ibf=2.0e-14 A`	Saturation current of the non-ideal forward base current.
10	`vlf=0.5 V`	Cross-over voltage of the non-ideal forward base current.
11	`ik=15.0e-3 A`	High-injection knee current.
12	`bri=16.0 A/A`	Ideal reverse current gain.
13	`ibr=8.0e-15 A`	Saturation current of the non-ideal reverse base current.
14	`vlr=0.5 V`	Cross-over voltage of the non-ideal reverse base current.
15	`xext=0.5`	Part of `Iex`, `Qex`, `Qtex` and `Isub` that depends on `Vbc1`.
16	`qbo=1.2e-12 Coul`	Base charge at zero bias.
17	`eta=4.0`	Factor of the built-in field of the base.
18	`avl=50.0`	Weak avalanche parameter.
19	`efi=0.7`	Electric field intercept (with `exavl`=1.
20	`ihc=3.0e-3 A`	Critical current for hot carriers.
21	`rcc=25.0` Ω	Constant part of the collector resistance.
22	`rcv=750.0` Ω	Resistance of the unmodulated epilayer.
23	`scrcv=1000.0` Ω	Space charge resistance of the epilayer.
24	`sfh=0.6`	Current spreading factor epilayer.
25	`rbc=50.0` Ω	Constant part of the base resistance.
26	`rbv=100.0` Ω	Variable part of the base resistance at zero bias.
27	`re=2.0` Ω	Emitter series resistance.
28	`taune=3.0e-10 s`	Minimum delay time of neutral and emitter charge.
29	`mtau=1.18`	Non-ideality factor of the neutral and emitter charge.
30	`cje=2.5e-13 F`	Zero bias emitter-base depletion capacitance.
31	`vde=0.9 V`	Emitter-base diffusion voltage.
32	`pe=0.33`	Emitter-base grading coefficient.
33	`xcje=0.5`	Fraction of the e-b depletion cap. that belongs to the sidewall.
34	`cjc=1.3e-13 F`	Zero bias collector-base depletion capacitance.
35	`vdc=0.6 V`	Collector-base diffusion voltage.
36	`pc=0.4`	Collector-base grading coefficient variable part.
37	`xp=0.2`	Constant part of `cjc`.
38	`mc=0.5`	Collector current modulation coefficient.
39	`xcjc=0.1`	Fraction of the collector-base depletion cap. under the emitter area.
40	`tref (C)`	Reference temperature. Default set by option `tnom`.
41	`tnom (C)`	Alias of tref. Default set by option `tnom`.
42	`tr (C)`	Alias of tref. Default set by option `tnom`.
43	`dta=0.0 K`	Difference of the device temperature to the ambient temperature. It served as the default value of instance trise.
44	`trise=0.0 K`	Alias of `dta`.
45	`vge=1.01 V`	Band-gap voltage of the emitter.
46	`vgb=1.18 V`	Band-gap voltage of the base.
47	`vgc=1.205 V`	Band-gap voltage of the collector.
48	`vgj=1.1 V`	Band-gap voltage recombination emitter-base junction.
49	`vi=0.04 V`	Ionization voltage base dope.
50	`na=3.0e17 cm`^-3	Maximum base dope concentration.
51	`er=2.0e-3`	Temperature coefficient of `vlf` and `vlr`.
52	`ab=1.35`	Temperature coefficient resistivity base.
53	`aepi=2.15`	Temperature coefficient resistivity of the epilayer.
54	`aex=1.0`	Temperature coefficient resistivity of the extrinsic base.
55	`ac=0.4`	Temperature coefficient resistivity of the buried layer.
56	`kf=2.0e-16`	Flickernoise coefficient ideal base current.
57	`kfn=2.0e-16`	Flickernoise coefficient non-ideal base current.
58	`af=1.0`	Flickernoise exponent.
59	`iss=6.0e-16 A`	Base-substrate saturation current.
60	`iks=5.0e-6 A`	Knee current of the substrate.
61	`cjs=1.0e-12 F`	Zero bias collector-substrate depletion capacitance.
62	`vds=0.5 V`	Collector-substrate diffusion voltage.
63	`ps=0.33`	Collector-substrate grading coefficient.
64	`vgs=1.15 V`	Band-gap voltage of the substrate.
65	`as=2.15`	For a closed buried layer: `as`=`ac`. For an open buried layer: `as`=`aepi`.
66	`imax=1.0 A`	Explosion current.
67	`vers=503`	Version mextrem.
68	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, and `spiceplus`.
69	`subs=1`

Operating-Point Parameters

1	`ib (A)`	Base current.
2	`ic (A)`	Collector current.
3	`ie (A)`	Emitter current.
4	`is (A)`	Substrate current.
5	`vbe (V)`	Base-emitter voltage.
6	`vbc (V)`	Base-collector voltage.
7	`vce (V)`	Collector-emitter voltage.
8	`vsc (V)`	Substrate voltage.
9	`re (`Ω`)`	Constant emitter resistance.
10	`rcc (`Ω`)`	Constant collector resistance.
11	`rbc (`Ω`)`	Constant part of base resistance.
12	`betadc (A/A)`	DC current gain.
13	`pwr (W)`	Power.
14	`Vb1e1 (V)`	Internal voltage.
15	`Vb2e1 (V)`	Internal voltage.
16	`Vb2c1 (V)`	Internal voltage.
17	`Vb2c2 (V)`	Internal voltage.
18	`Vb1b2 (V)`	Internal voltage.
19	`Vb1c1 (V)`	Internal voltage.
20	`Vbc1 (V)`	Internal voltage.
21	`in (A)`	Main current.
22	`ic1c2 (A)`	Variable collector resistance current.
23	`ib1 (A)`	Bulk component of ideal base current.
24	`ib1s (A)`	Sidewall component of ideal base current.
25	`ib2 (A)`	Non-ideal base current.
26	`iavl (A)`	Weak avalanche current.
27	`ib1b2 (A)`	Variable base resistance current.
28	`ib3 (A)`	Non-ideal reverse base current.
29	`iex (A)`	Internal extrinsic base current.
30	`isub (A)`	Internal base-substrate current.
31	`isf (A)`	Substrate-collector current.
32	`xiex (A)`	External extrinsic base current.
33	`Xisub (A)`	External base-substrate current.
34	`gx (S)`	dIn/dVb2e1.
35	`gy (S)`	dIn/dVb2c2.
36	`gz (S)`	dIn/dVb2c1.
37	`grcvy (S)`	dIc1c2/dVb2c2.
38	`grcvz (S)`	dIc1c2/dVb2c1.
39	`gpi (S)`	Conductance floor base-emitter junction: dIb1/dVb2e1 + dIb2/dVb2e1.
40	`sgpi (S)`	Conductance sidewall base-emitter junction: dIb1S/dVb1e1.
41	`gmux (S)`	Dependence avalanche multiplication on internal b-e junction: -dIavl/dVb2e1.
42	`gmu (S)`	Dependence avalanche multiplication on internal b-c junction: -dIavl/dVb2c2.
43	`gmuz (S)`	Dependence avalanche multiplication on external b-c junction:-dIavl/dVb2c1.
44	`grbv (S)`	dIb1b2/dVb1b2.
45	`grbvx (S)`	Emitter Early-effect on Ib1b2: dIb1b2/dVb2e1.
46	`grbvy (S)`	Internal collector Early-effect on Ib1b2: dIb1b2/dVb2c2.
47	`grbvz (S)`	External collector Early effect on Ib1b2: dIb1b2/dVb2c1.
48	`gmuex (S)`	Conductance floor extrinsic b-c junction: dIex/dVb1c1 + dIsub/dVb1c1 + dIb3/dVb1c1.
49	`xgmuex (S)`	Conductance sidewall extrinsic b-c junction: dXIex/dVbc1 + dXIsub/dVbc1.
50	`gsub (S)`	Conductance s-c junction: dIsf/dVsc1.
51	`gpnp (S)`	Transconductance floor extrinsic PNP transistor: dIsub/dVb1c1.
52	`xgpnp (S)`	Transconductance sidewall extrinsic PNP transistor: dXIsub/dVbc1.
53	`cbex (F)`	Capacitance floor b-e junction: dQte/dVb2e1 + dQbe/dVb2e1 + dQn/dVb2e1.
54	`cbey (F)`	Internal collector Early-effect on Qbe: dQbe/dVb2c2.
55	`cbez (F)`	External collector Early-effect on Qbe: dQbe/dVb2c1.
56	`scte (F)`	Dependence of QteS on internal b-e junction: dQteS/dVb2e1.
57	`cbcx (F)`	Emitter Early-effect on Qbc: dQbc/dVb2e1.
58	`cbcy (F)`	Capacitance intrinsic b-c junction: dQtc/dVb2c2 + dQbc/dVb2c2 + dQepi/dVb2c2.
59	`cbcz (F)`	Collector Early-effect on Qtc: dQtc/dVb2c1 + dQbc/dVb2c1 + dQepi/dVb2c1.
60	`cb1b2 (F)`	Capacitance AC current crowding: dQb1b2/dVb1b2 = Cb.
61	`cb1b2x (F)`	Dependence of Qb1b2 on internal b-e junction voltage: dQb1b2/dVb2e1.
62	`cbcex (F)`	Capacitance floor extrinsic b-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
63	`xcbcex (F)`	Capacitance sidewall extrinsic b-c junction: dXQtex/dVbc1 + dXQex/dVbc1.
64	`cts (F)`	Capacitance s-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
65	`lv6 (A)`
66	`lv7 (S)`
67	`lv8 (A)`
68	`lv9 (A)`
69	`lv10 (A/A)`
70	`lv11 (A/A)`
71	`lv14 (`Ω`)`
72	`lv15 (`Ω`)`
73	`lv16 (S)`
74	`lx0 (V)`
75	`lx1 (V)`
76	`lx2 (A)`
77	`lx3 (A)`
78	`cbe (F)`	Cbe.
79	`cbc (F)`	Cbc.
80	`csc (F)`	Csc.

Parameter Index

Vb1b2 OP-18	eta M-17	is OP-4	re OP-9
Vb1c1 OP-19	exavl M-5	isf OP-31	region I-4
Vb1e1 OP-14	exmod M-3	iss M-59	scrcv M-23
Vb2c1 OP-16	exphi M-4	isub OP-30	scte OP-56
Vb2c2 OP-17	gmu OP-42	kf M-56	sfh M-24
Vb2e1 OP-15	gmuex OP-48	kfn M-57	sgpi OP-40
Vbc1 OP-20	gmux OP-41	level M-2	subs M-69
Xisub OP-33	gmuz OP-43	lv1 I-6	taune M-28
ab M-52	gpi OP-39	lv10 OP-69	tnom M-41
ac M-55	gpnp OP-51	lv11 OP-70	tr M-42
aepi M-53	grbv OP-44	lv14 OP-71	tref M-40
aex M-54	grbvx OP-45	lv15 OP-72	trise I-5
af M-58	grbvy OP-46	lv16 OP-73	trise M-44
area I-1	grbvz OP-47	lv4 I-7	type M-1
as M-65	grcvy OP-37	lv6 OP-65	vbc OP-6
avl M-18	grcvz OP-38	lv7 OP-66	vbe OP-5
betadc OP-12	gsub OP-50	lv8 OP-67	vce OP-7
bf M-7	gx OP-34	lv9 OP-68	vdc M-35
bri M-12	gy OP-35	lx0 OP-74	vde M-31
cb1b2 OP-60	gz OP-36	lx1 OP-75	vds M-62
cb1b2x OP-61	iavl OP-26	lx2 OP-76	vers M-67
cbc OP-79	ib OP-1	lx3 OP-77	vgb M-46
cbcex OP-62	ib1 OP-23	m I-3	vgc M-47
cbcx OP-57	ib1b2 OP-27	mc M-38	vge M-45
cbcy OP-58	ib1s OP-24	mtau M-29	vgj M-48
cbcz OP-59	ib2 OP-25	mult I-2	vgs M-64
cbe OP-78	ib3 OP-28	na M-50	vi M-49
cbex OP-53	ibf M-9	pc M-36	vlf M-10
cbey OP-54	ibr M-13	pe M-32	vlr M-14
cbez OP-55	ic OP-2	ps M-63	vsc OP-8
cjc M-34	ic1c2 OP-22	pwr OP-13	xcbcex OP-63
cje M-30	ie OP-3	qbo M-16	xcjc M-39
cjs M-61	iex OP-29	rbc M-25	xcje M-33
compatible M-68	ihc M-20	rbc OP-11	xext M-15
csc OP-80	ik M-11	rbv M-26	xgmuex OP-49
cts OP-64	iks M-60	rcc M-21	xgpnp OP-52
dta M-43	imax M-66	rcc OP-10	xibi M-8
efi M-19	in OP-21	rcv M-22	xiex OP-32
er M-51	is M-6	re M-27	xp M-37

Compact Bipolar-Transistor Model (bjt504)

This is SimKit 5.0.

Instance Definition

Name  c  b  e  s ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt504 parameter=value ...

Model Parameters

1	`level=504`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`exsub=0`	Flag for extended modelling of substrate currents.
10	`is=2.2e-17 A`	Collector-emitter saturation current.
11	`ik=0.1 A`	Collector-emitter high injection knee current.
12	`ver=2.5 V`	Reverse Early voltage.
13	`vef=44 V`	Forward Early voltage.
14	`bf=215`	Ideal forward current gain.
15	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
16	`mlf=2`	Non ideality factor of the non-ideal forward base current.
17	`xibi=0`	Part of ideal base current that belongs to the sidewall.
18	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
19	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
20	`bri=7`	Ideal reverse current gain.
21	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
22	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
23	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
24	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
25	`vavl=3 V`	Voltage determining curvature of avalanche current.
26	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
27	`re=5` Ω	Emitter resistance.
28	`rbc=23` Ω	Constant part of the base resistance.
29	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
30	`rcc=12` Ω	Collector contact resistance.
31	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
32	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
33	`rcv=150` Ω	Resistance of the un-modulated epilayer.
34	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
35	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
36	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
37	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
38	`vde=0.95 V`	Emitter-base diffusion voltage.
39	`pe=0.4`	Emitter-base grading coefficient.
40	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
41	`cbeo=0`	Emitter-base overlap capacitance.
42	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
43	`vdc=0.68 V`	Collector-base diffusion voltage.
44	`pc=0.5`	Collector-base grading coefficient.
45	`xp=0.35`	Constant part of Cjc.
46	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
47	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
48	`cbco=0`	Collector-base overlap capacitance.
49	`mtau=1`	Non-ideality factor of the emitter stored charge.
50	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
51	`taub=4.2e-12 s`	Transit time of stored base charge.
52	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
53	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
54	`deg=0 eV`	Bandgap difference over the base.
55	`xrec=0`	Pre-factor of the recombination part of Ib1.
56	`xqb=0.333`	Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
57	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
58	`ae=0`	Temperature coefficient of the resistivity of the emitter.
59	`ab=1`	Temperature coefficient of the resistivity of the base.
60	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
61	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
62	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
63	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
64	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
65	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
66	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
67	`vgb=1.17 V`	Bandgap voltage of the base.
68	`vgc=1.18 V`	Bandgap voltage of the collector.
69	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
70	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
71	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
72	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
73	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
74	`af=2`	Exponent of the Flicker-noise.
75	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
76	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
77	`kavl=0`	Switch for white noise contribution due to avalanche.
78	`kavlver=504`	Switch for avalanche noise of 504.11 and 504.12.
79	`kc=0`	Switch for RF correlation noise model selection.
80	`ke=0`	Fraction of QE in excess phase shift.
81	`ftaun=0`	Fraction of noise transit time to total transit time.
82	`iss=4.8e-17 A`	Base-substrate saturation current.
83	`icss=-1 A`	Collector-substrate ideal saturation current.
84	`iks=0.00025 A`	Base-substrate high injection knee current.
85	`cjs=3.15e-13 F`	Zero-bias collector-substrate depletion capacitance.
86	`vds=0.62 V`	Collector-substrate diffusion voltage.
87	`ps=0.34`	Collector-substrate grading coefficient.
88	`vgs=1.2 V`	Band-gap voltage of the substrate.
89	`as=1.58`	For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.
90	`asub=2`	Temperature coefficient for mobility of minorities in the substrate.
91	`vexlim=400`	Upper limit of exp() function argument for convergence.
92	`type=npn`	Transistor type. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnp`l.
93	`imax=1000 A`	Explosion current.
94	`mvt0=0.0`	Threshold mismatch intercept.
95	`tnom (deg. C)`	Parameters measurement temperature.
96	`tr (deg. C)`	Alias of tnom.
97	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica` and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`Is (A)`	External DC substrate current.
5	`BetaDC`	External DC current gain Ic/Ib.
6	`Vbe (V)`	External base-emitter bias.
7	`Vbc (V)`	External base-collector bias.
8	`Vce (V)`	External collector-emitter bias.
9	`Vse (V)`	External substrate-emitter bias.
10	`Vbs (V)`	External base-substrate bias.
11	`Vsc (V)`	External substrate-collector bias.
12	`Vb2e1 (V)`	Internal base-emitter bias.
13	`Vb2c2 (V)`	Internal base-collector bias.
14	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
15	`Vb1c1 (V)`	External base-collector bias without contact resistances.
16	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
17	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
18	`Vc4c1 (V)`	Bias over intrinsic buried layer.
19	`Ve1e (V)`	Bias over emitter resistance.
20	`In (A)`	Main current.
21	`Ic1c2 (A)`	Epilayer current.
22	`Ib1b2 (A)`	Pinched-base current.
23	`Ib1 (A)`	Ideal forward base current.
24	`SIb1 (A)`	Ideal side-wall base current.
25	`Izteb (A)`	Zener tunneling current in the emitter base junction.
26	`Ib2 (A)`	Non-ideal forward base current.
27	`Ib3 (A)`	Non-ideal reverse base current.
28	`Iex (A)`	Extrinsic reverse base current.
29	`XIex (A)`	Extrinsic reverse base current.
30	`Iavl (A)`	Avalanche current.
31	`IRE (A)`	Current through emitter resistance.
32	`IRBC (A)`	Current through constant base resistance.
33	`IRCC (A)`	Current through collector contact resistance.
34	`IRCBLX (A)`	Current through extrinsic collector resistance.
35	`IRCBLI (A)`	Current through intrinsic collector resistance.
36	`Qe (C)`	Emitter charge or emitter neutral charge.
37	`Qte (C)`	Base-emitter depletion charge.
38	`SQte (C)`	Sidewall base-emitter depletion charge.
39	`Qbe (C)`	Base-emitter diffusion charge.
40	`Qbc (C)`	Base-collector diffusion charge.
41	`Qtc (C)`	Base-collector depletion charge.
42	`Qepi (C)`	Epilayer diffusion charge.
43	`Qb1b2 (C)`	AC current crowding charge.
44	`Qtex (C)`	Extrinsic base-collector depletion charge.
45	`XQtex (C)`	Extrinsic base-collector depletion charge.
46	`Qex (C)`	Extrinsic base-collector diffusion charge.
47	`XQex (C)`	Extrinsic base-collector diffusion charge.
48	`gx (1/`Ω`)`	Forward transconductance.
49	`gy (1/`Ω`)`	Reverse transconductance.
50	`gz (1/`Ω`)`	Reverse transconductance.
51	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
52	`gpix (1/`Ω`)`	Conductance floor b-e junction.
53	`gpiy (1/`Ω`)`	Early effect on recombination base current.
54	`gpiz (1/`Ω`)`	Early effect on recombination base current.
55	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
56	`gmuy (1/`Ω`)`	Conductance of avalanche current.
57	`gmuz (1/`Ω`)`	Conductance of avalanche current.
58	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
59	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
60	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
61	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
62	`Rbv (`Ω`)`	Base resistance.
63	`grbvx (1/`Ω`)`	Early-effect on base resistance.
64	`grbvy (1/`Ω`)`	Early-effect on base resistance.
65	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
66	`RE (`Ω`)`	Emitter resistance.
67	`RBC (`Ω`)`	Constant part of the base resistance.
68	`RCC (`Ω`)`	Collector contact resistance.
69	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
70	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
71	`SCbe (F)`	Capacitance sidewall b-e junction.
72	`Cbex (F)`	Capacitance floor b-e junction.
73	`Cbey (F)`	Early effect on b-e diffusion charge.
74	`Cbez (F)`	Early effect on b-e diffusion charge.
75	`Cbcx (F)`	Early effect on b-c diffusion charge.
76	`Cbcy (F)`	Capacitance floor b-c junction.
77	`Cbcz (F)`	Capacitance floor b-c junction.
78	`Cbcex (F)`	Capacitance extrinsic b-c junction.
79	`XCbcex (F)`	Capacitance extrinsic b-c junction.
80	`Cb1b2 (F)`	Capacitance AC current crowding.
81	`Cb1b2x (F)`	Cross-capacitance of the AC current crowding.
82	`Cb1b2y (F)`	Cross-capacitance of the AC current crowding.
83	`Cb1b2z (F)`	Cross-capacitance of the AC current crowding.
84	`gm (1/`Ω`)`	Transconductance.
85	`beta`	Current amplification.
86	`gout (1/`Ω`)`	Output conductance.
87	`gmu (1/`Ω`)`	Feedback transconductance.
88	`RB (`Ω`)`	Base resistance.
89	`Cbe (F)`	Base-emitter capacitance.
90	`Cbc (F)`	Base-collector capacitance.
91	`fT (Hz)`	Good approximation for cut-off frequency.
92	`Iqs (A)`	Current at onset of quasi-saturation.
93	`XiWepi (M)`	Thickness of injection layer.
94	`Vb2c2star (V)`	Physical value of internal base-collector bias.
95	`Pdiss (W)`	Dissipation.
96	`pwr (W)`	Power dissipation.
97	`TK (K)`	Actual temperature.
98	`Isub (A)`	Substrate current.
99	`XIsub (A)`	Substrate current.
100	`Isf (A)`	Substrate failure current.
101	`Qts (C)`	Collector-substrate depletion charge.
102	`gS (1/`Ω`)`	Conductance parasitic PNP transistor.
103	`XgS (1/`Ω`)`	Conductance parasitic PNP transistor.
104	`gSf (1/`Ω`)`	Conductance of s-c junction.
105	`Cts (F)`	Capacitance s-c junction.
106	`jtype`	Type: +1=npn and -1=pnp.
107	`w_estimate (M)`
108	`l_estimate (M)`

Parameter Index

BetaDC OP-5	SCbe OP-71	dvgbr M-66	mvt0 M-94
Cb1b2 OP-80	SIb1 OP-24	dvgte M-73	nzeb M-19
Cb1b2x OP-81	SQte OP-38	exavl M-8	paramchk M-2
Cb1b2y OP-82	Sgpi OP-51	exmod M-6	pc M-44
Cb1b2z OP-83	TK OP-97	exphi M-7	pe M-39
Cbc OP-90	Vb1c1 OP-15	exsub M-9	printscaled I-2
Cbcex OP-78	Vb1c4 OP-16	fT OP-91	ps M-87
Cbcx OP-75	Vb2c1 OP-14	ftaun M-81	pwr OP-96
Cbcy OP-76	Vb2c2 OP-13	gS OP-102	rbc M-28
Cbcz OP-77	Vb2c2star OP-94	gSf OP-104	rbv M-29
Cbe OP-89	Vb2e1 OP-12	gm OP-84	rcbli M-32
Cbex OP-72	Vbc OP-7	gmu OP-87	rcblx M-31
Cbey OP-73	Vbe OP-6	gmuex OP-58	rcc M-30
Cbez OP-74	Vbs OP-10	gmux OP-55	rcv M-33
Cts OP-105	Vc3c4 OP-17	gmuy OP-56	re M-27
IRBC OP-32	Vc4c1 OP-18	gmuz OP-57	region I-4
IRCBLI OP-35	Vce OP-8	gout OP-86	scrcv M-34
IRCBLX OP-34	Ve1e OP-19	gpix OP-52	sfh M-26
IRCC OP-33	Vsc OP-11	gpiy OP-53	taub M-51
IRE OP-31	Vse OP-9	gpiz OP-54	taue M-50
Iavl OP-30	XCbcex OP-79	grbvx OP-63	taur M-53
Ib OP-2	XIex OP-29	grbvy OP-64	tempeff O-1
Ib1 OP-23	XIsub OP-99	grbvz OP-65	tepi M-52
Ib1b2 OP-22	XQex OP-47	grcvy OP-60	tnom M-95
Ib2 OP-26	XQtex OP-45	grcvz OP-61	tr M-96
Ib3 OP-27	XgS OP-103	gx OP-48	tref M-4
Ic OP-1	Xgmuex OP-59	gy OP-49	trise I-3
Ic1c2 OP-21	XiWepi OP-93	gz OP-50	tvgeb M-72
Ie OP-3	ab M-59	ibf M-15	type M-92
Iex OP-28	ac M-63	ibr M-21	vavl M-25
In OP-20	acbl M-64	icss M-83	vdc M-43
Iqs OP-92	ae M-58	ihc M-35	vde M-38
Is OP-4	aepi M-61	ik M-11	vds M-86
Isf OP-100	aex M-62	iks M-84	vef M-13
Isub OP-98	af M-74	imax M-93	ver M-12
Izteb OP-25	aqbo M-57	is M-10	vexlim M-91
Pdiss OP-95	area I-6	iss M-82	vgb M-67
Qb1b2 OP-43	as M-89	izeb M-18	vgc M-68
Qbc OP-40	asub M-90	jtype OP-106	vgj M-69
Qbe OP-39	avgeb M-71	kavl M-77	vgs M-88
Qe OP-36	axi M-36	kavlver M-78	vgzeb M-70
Qepi OP-42	beta OP-85	kc M-79	vlr M-22
Qex OP-46	bf M-14	ke M-80	w_estimate OP-107
Qtc OP-41	bri M-20	kf M-75	wavl M-24
Qte OP-37	cbco M-48	kfn M-76	xcjc M-47
Qtex OP-44	cbeo M-41	l_estimate OP-108	xcje M-40
Qts OP-101	cjc M-42	level M-1	xext M-23
RB OP-88	cje M-37	m I-5	xibi M-17
RBC OP-67	cjs M-85	mc M-46	xp M-45
RCBLI OP-70	compatible M-97	meff O-2	xqb M-56
RCBLX OP-69	dais M-60	mexlev M-3	xrec M-55
RCC OP-68	deg M-54	mlf M-16
RE OP-66	dta M-5	mtau M-49
Rbv OP-62	dvgbf M-65	mult I-1

Compact Bipolar-Transistor Model (bjt504t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt504t parameter=value ...

Model Parameters

1	`level=504`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`exsub=0`	Flag for extended modelling of substrate currents.
10	`is=2.2e-17 A`	Collector-emitter saturation current.
11	`ik=0.1 A`	Collector-emitter high injection knee current.
12	`ver=2.5 V`	Reverse Early voltage.
13	`vef=44 V`	Forward Early voltage.
14	`bf=215`	Ideal forward current gain.
15	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
16	`mlf=2`	Non ideality factor of the non-ideal forward base current.
17	`xibi=0`	Part of ideal base current that belongs to the sidewall.
18	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
19	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
20	`bri=7`	Ideal reverse current gain.
21	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
22	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
23	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
24	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
25	`vavl=3 V`	Voltage determining curvature of avalanche current.
26	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
27	`re=5` Ω	Emitter resistance.
28	`rbc=23` Ω	Constant part of the base resistance.
29	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
30	`rcc=12` Ω	Collector contact resistance.
31	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
32	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
33	`rcv=150` Ω	Resistance of the un-modulated epilayer.
34	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
35	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
36	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
37	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
38	`vde=0.95 V`	Emitter-base diffusion voltage.
39	`pe=0.4`	Emitter-base grading coefficient.
40	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
41	`cbeo=0`	Emitter-base overlap capacitance.
42	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
43	`vdc=0.68 V`	Collector-base diffusion voltage.
44	`pc=0.5`	Collector-base grading coefficient.
45	`xp=0.35`	Constant part of Cjc.
46	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
47	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
48	`cbco=0`	Collector-base overlap capacitance.
49	`mtau=1`	Non-ideality factor of the emitter stored charge.
50	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
51	`taub=4.2e-12 s`	Transit time of stored base charge.
52	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
53	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
54	`deg=0 eV`	Bandgap difference over the base.
55	`xrec=0`	Pre-factor of the recombination part of Ib1.
56	`xqb=0.333`	Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
57	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
58	`ae=0`	Temperature coefficient of the resistivity of the emitter.
59	`ab=1`	Temperature coefficient of the resistivity of the base.
60	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
61	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
62	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
63	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
64	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
65	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
66	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
67	`vgb=1.17 V`	Bandgap voltage of the base.
68	`vgc=1.18 V`	Bandgap voltage of the collector.
69	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
70	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
71	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
72	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
73	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
74	`af=2`	Exponent of the Flicker-noise.
75	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
76	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
77	`kavl=0`	Switch for white noise contribution due to avalanche.
78	`kavlver=504`	Switch for avalanche noise of 504.11 and 504.12.
79	`kc=0`	Switch for RF correlation noise model selection.
80	`ke=0`	Fraction of QE in excess phase shift.
81	`ftaun=0`	Fraction of noise transit time to total transit time.
82	`iss=4.8e-17 A`	Base-substrate saturation current.
83	`icss=-1 A`	Collector-substrate ideal saturation current.
84	`iks=0.00025 A`	Base-substrate high injection knee current.
85	`cjs=3.15e-13 F`	Zero-bias collector-substrate depletion capacitance.
86	`vds=0.62 V`	Collector-substrate diffusion voltage.
87	`ps=0.34`	Collector-substrate grading coefficient.
88	`vgs=1.2 V`	Band-gap voltage of the substrate.
89	`as=1.58`	For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.
90	`asub=2`	Temperature coefficient for mobility of minorities in the substrate.
91	`rth=300 K/W`	Thermal resistance.
92	`cth=3e-09 J/K`	Thermal capacitance.
93	`ath=0`	Temperature coefficient of the thermal resistance.
94	`vexlim=400`	Upper limit of exp() function argument for convergence.
95	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
96	`imax=1000 A`	Explosion current.
97	`mvt0=0.0`	Threshold mismatch intercept.
98	`tnom (deg. C)`	Alias of tnom.
99	`tr (deg. C)`	Alias of tnom.
100	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`Is (A)`	External DC substrate current.
5	`BetaDC`	External DC current gain Ic/Ib.
6	`Vbe (V)`	External base-emitter bias.
7	`Vbc (V)`	External base-collector bias.
8	`Vce (V)`	External collector-emitter bias.
9	`Vse (V)`	External substrate-emitter bias.
10	`Vbs (V)`	External base-substrate bias.
11	`Vsc (V)`	External substrate-collector bias.
12	`Vb2e1 (V)`	Internal base-emitter bias.
13	`Vb2c2 (V)`	Internal base-collector bias.
14	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
15	`Vb1c1 (V)`	External base-collector bias without contact resistances.
16	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
17	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
18	`Vc4c1 (V)`	Bias over intrinsic buried layer.
19	`Ve1e (V)`	Bias over emitter resistance.
20	`In (A)`	Main current.
21	`Ic1c2 (A)`	Epilayer current.
22	`Ib1b2 (A)`	Pinched-base current.
23	`Ib1 (A)`	Ideal forward base current.
24	`SIb1 (A)`	Ideal side-wall base current.
25	`Izteb (A)`	Zener tunneling current in the emitter base junction.
26	`Ib2 (A)`	Non-ideal forward base current.
27	`Ib3 (A)`	Non-ideal reverse base current.
28	`Iex (A)`	Extrinsic reverse base current.
29	`XIex (A)`	Extrinsic reverse base current.
30	`Iavl (A)`	Avalanche current.
31	`IRE (A)`	Current through emitter resistance.
32	`IRBC (A)`	Current through constant base resistance.
33	`IRCC (A)`	Current through collector contact resistance.
34	`IRCBLX (A)`	Current through extrinsic collector resistance.
35	`IRCBLI (A)`	Current through intrinsic collector resistance.
36	`Qe (C)`	Emitter charge or emitter neutral charge.
37	`Qte (C)`	Base-emitter depletion charge.
38	`SQte (C)`	Sidewall base-emitter depletion charge.
39	`Qbe (C)`	Base-emitter diffusion charge.
40	`Qbc (C)`	Base-collector diffusion charge.
41	`Qtc (C)`	Base-collector depletion charge.
42	`Qepi (C)`	Epilayer diffusion charge.
43	`Qb1b2 (C)`	AC current crowding charge.
44	`Qtex (C)`	Extrinsic base-collector depletion charge.
45	`XQtex (C)`	Extrinsic base-collector depletion charge.
46	`Qex (C)`	Extrinsic base-collector diffusion charge.
47	`XQex (C)`	Extrinsic base-collector diffusion charge.
48	`gx (1/`Ω`)`	Forward transconductance.
49	`gy (1/`Ω`)`	Reverse transconductance.
50	`gz (1/`Ω`)`	Reverse transconductance.
51	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
52	`gpix (1/`Ω`)`	Conductance floor b-e junction.
53	`gpiy (1/`Ω`)`	Early effect on recombination base current.
54	`gpiz (1/`Ω`)`	Early effect on recombination base current.
55	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
56	`gmuy (1/`Ω`)`	Conductance of avalanche current.
57	`gmuz (1/`Ω`)`	Conductance of avalanche current.
58	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
59	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
60	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
61	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
62	`Rbv (`Ω`)`	Base resistance.
63	`grbvx (1/`Ω`)`	Early-effect on base resistance.
64	`grbvy (1/`Ω`)`	Early-effect on base resistance.
65	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
66	`RE (`Ω`)`	Emitter resistance.
67	`RBC (`Ω`)`	Constant part of the base resistance.
68	`RCC (`Ω`)`	Collector contact resistance.
69	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
70	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
71	`SCbe (F)`	Capacitance sidewall b-e junction.
72	`Cbex (F)`	Capacitance floor b-e junction.
73	`Cbey (F)`	Early effect on b-e diffusion charge.
74	`Cbez (F)`	Early effect on b-e diffusion charge.
75	`Cbcx (F)`	Early effect on b-c diffusion charge.
76	`Cbcy (F)`	Capacitance floor b-c junction.
77	`Cbcz (F)`	Capacitance floor b-c junction.
78	`Cbcex (F)`	Capacitance extrinsic b-c junction.
79	`XCbcex (F)`	Capacitance extrinsic b-c junction.
80	`Cb1b2 (F)`	Capacitance AC current crowding.
81	`Cb1b2x (F)`	Cross-capacitance of the AC current crowding.
82	`Cb1b2y (F)`	Cross-capacitance of the AC current crowding.
83	`Cb1b2z (F)`	Cross-capacitance of the AC current crowding.
84	`gm (1/`Ω`)`	Transconductance.
85	`beta`	Current amplification.
86	`gout (1/`Ω`)`	Output conductance.
87	`gmu (1/`Ω`)`	Feedback transconductance.
88	`RB (`Ω`)`	Base resistance.
89	`Cbe (F)`	Base-emitter capacitance.
90	`Cbc (F)`	Base-collector capacitance.
91	`fT (Hz)`	Good approximation for cut-off frequency.
92	`Iqs (A)`	Current at onset of quasi-saturation.
93	`XiWepi (M)`	Thickness of injection layer.
94	`Vb2c2star (V)`	Physical value of internal base-collector bias.
95	`Pdiss (W)`	Dissipation.
96	`pwr (W)`	Power dissipation.
97	`TK (K)`	Actual temperature.
98	`Isub (A)`	Substrate current.
99	`XIsub (A)`	Substrate current.
100	`Isf (A)`	Substrate failure current.
101	`Qts (C)`	Collector-substrate depletion charge.
102	`gS (1/`Ω`)`	Conductance parasitic PNP transistor.
103	`XgS (1/`Ω`)`	Conductance parasitic PNP transistor.
104	`gSf (1/`Ω`)`	Conductance of s-c junction.
105	`Cts (F)`	Capacitance s-c junction.
106	`jtype`	Type: +1=npn and -1=pnp.
107	`w_estimate (M)`
108	`l_estimate (M)`

Parameter Index

BetaDC OP-5	SCbe OP-71	dta M-5	mtau M-49
Cb1b2 OP-80	SIb1 OP-24	dvgbf M-65	mult I-1
Cb1b2x OP-81	SQte OP-38	dvgbr M-66	mvt0 M-97
Cb1b2y OP-82	Sgpi OP-51	dvgte M-73	nzeb M-19
Cb1b2z OP-83	TK OP-97	exavl M-8	paramchk M-2
Cbc OP-90	Vb1c1 OP-15	exmod M-6	pc M-44
Cbcex OP-78	Vb1c4 OP-16	exphi M-7	pe M-39
Cbcx OP-75	Vb2c1 OP-14	exsub M-9	printscaled I-2
Cbcy OP-76	Vb2c2 OP-13	fT OP-91	ps M-87
Cbcz OP-77	Vb2c2star OP-94	ftaun M-81	pwr OP-96
Cbe OP-89	Vb2e1 OP-12	gS OP-102	rbc M-28
Cbex OP-72	Vbc OP-7	gSf OP-104	rbv M-29
Cbey OP-73	Vbe OP-6	gm OP-84	rcbli M-32
Cbez OP-74	Vbs OP-10	gmu OP-87	rcblx M-31
Cts OP-105	Vc3c4 OP-17	gmuex OP-58	rcc M-30
IRBC OP-32	Vc4c1 OP-18	gmux OP-55	rcv M-33
IRCBLI OP-35	Vce OP-8	gmuy OP-56	re M-27
IRCBLX OP-34	Ve1e OP-19	gmuz OP-57	region I-4
IRCC OP-33	Vsc OP-11	gout OP-86	rth M-91
IRE OP-31	Vse OP-9	gpix OP-52	scrcv M-34
Iavl OP-30	XCbcex OP-79	gpiy OP-53	sfh M-26
Ib OP-2	XIex OP-29	gpiz OP-54	taub M-51
Ib1 OP-23	XIsub OP-99	grbvx OP-63	taue M-50
Ib1b2 OP-22	XQex OP-47	grbvy OP-64	taur M-53
Ib2 OP-26	XQtex OP-45	grbvz OP-65	tempeff O-1
Ib3 OP-27	XgS OP-103	grcvy OP-60	tepi M-52
Ic OP-1	Xgmuex OP-59	grcvz OP-61	tnom M-98
Ic1c2 OP-21	XiWepi OP-93	gx OP-48	tr M-99
Ie OP-3	ab M-59	gy OP-49	tref M-4
Iex OP-28	ac M-63	gz OP-50	trise I-3
In OP-20	acbl M-64	ibf M-15	tvgeb M-72
Iqs OP-92	ae M-58	ibr M-21	type M-95
Is OP-4	aepi M-61	icss M-83	vavl M-25
Isf OP-100	aex M-62	ihc M-35	vdc M-43
Isub OP-98	af M-74	ik M-11	vde M-38
Izteb OP-25	aqbo M-57	iks M-84	vds M-86
Pdiss OP-95	area I-6	imax M-96	vef M-13
Qb1b2 OP-43	as M-89	is M-10	ver M-12
Qbc OP-40	asub M-90	iss M-82	vexlim M-94
Qbe OP-39	ath M-93	izeb M-18	vgb M-67
Qe OP-36	avgeb M-71	jtype OP-106	vgc M-68
Qepi OP-42	axi M-36	kavl M-77	vgj M-69
Qex OP-46	beta OP-85	kavlver M-78	vgs M-88
Qtc OP-41	bf M-14	kc M-79	vgzeb M-70
Qte OP-37	bri M-20	ke M-80	vlr M-22
Qtex OP-44	cbco M-48	kf M-75	w_estimate OP-107
Qts OP-101	cbeo M-41	kfn M-76	wavl M-24
RB OP-88	cjc M-42	l_estimate OP-108	xcjc M-47
RBC OP-67	cje M-37	level M-1	xcje M-40
RCBLI OP-70	cjs M-85	m I-5	xext M-23
RCBLX OP-69	compatible M-100	mc M-46	xibi M-17
RCC OP-68	cth M-92	meff O-2	xp M-45
RE OP-66	dais M-60	mexlev M-3	xqb M-56
Rbv OP-62	deg M-54	mlf M-16	xrec M-55

Compact Bipolar-Transistor Model (bjt505)

This is SimKit 5.0.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1	`dta=0 degC`	Difference between the local and global ambient temperatures.
2	`mult=1`	Multiplication factor.
3	`printscaled=0`	Print scaled parameter info if value not equal to zero.
4	`trise=0`	Difference between the local ambient and global ambient temperature.
5	`region=fwd`	Estimated DC operating region, used as a convergence aid.Possible values are `off`, `sat`, `rev`, and `fwd`.
6	`m=1`	Alias of mult.
7	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt505 parameter=value ...

Model Parameters

1	`level=505`	Model level.
2	`paramchk=0`	Level of clip warning info.
3	`version=505`	Model version.
4	`type=npn`	Flag for NPN (1) or PNP (-1) transistor type.Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
5	`tref=25 degC`	Reference temperature.
6	`exmod=1`	Flag for extended modeling of the reverse current gain.
7	`exphi=1`	Flag for distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modeling of avalanche currents.
9	`exsub=1`	Flag for extended modeling of substrate currents.
10	`is=2.2e-17 A`	Saturation current of main current.
11	`nff=1`	Non-ideality factor of forward main current.
12	`nfr=1`	Non-ideality factor of reverse main current.
13	`ik=0.1 A`	CE high injection knee current.
14	`ver=2.5 V`	Reverse Early voltage.
15	`vef=44 V`	Forward Early voltage.
16	`ibi=1e-19 A`	Saturation current of ideal base current.
17	`nbi=1`	Non-ideality factor of ideal base current.
18	`ibis=0 A`	Saturation current of ideal side wall base current.
19	`nbis=1`	Non-ideality factor of ideal side wall base current.
20	`ibf=2.7e-15 A`	Saturation current of non-ideal forward base current.
21	`mlf=2`	Non-ideality factor of non-ideal forward base current.
22	`ibfs=0 A`	Saturation current of non-ideal side wall forward base current.
23	`mlfs=2`	Non-ideality factor of non-ideal side wall forward base current.
24	`ibx=3.14e-18 A`	Saturation current of extrinsic reverse base current.
25	`ikbx=0.0143 A`	Extrinsic CB high injection knee current.
26	`ibr=1e-15 A`	Saturation current of non-ideal reverse base current.
27	`mlr=2`	Non-ideality factor of non-ideal reverse base current.
28	`xext=0.63`	Part of currents and charges that belong to extrinsic region.
29	`izeb=0 A`	Pre-factor of EB Zener tunneling current.
30	`nzeb=22`	Coefficient of EB Zener tunneling current.
31	`izcb=0 A`	Pre-factor of CB Zener tunneling current.
32	`nzcb=22`	Coefficient of CB Zener tunneling current.
33	`swavl=1`	Switch of avalanche factor Gem model.
34	`aavl=400`	aavl of swavl=1 Gem model.
35	`cavl=-0.37`	cavl of swavl=1 Gem model.
36	`itoavl=0.5 A`	Current dependence parameter of swavl=1 Gem model.
37	`bavl=25`	bavl of swavl=1 Gem model.
38	`vdcavl=0.1 V`	CB diffusion voltage dedicated for swavl=1 Gem model.
39	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
40	`vavl=3 V`	Voltage determining curvature of avalanche current.
41	`sfh=0.3`	Current spreading factor of avalanche model when exavl=1.
42	`re=5` Ω	Emitter resistance.
43	`rbc=23` Ω	Constant part of base resistance.
44	`rbv=18` Ω	Zero-bias value of variable part of the base resistance.
45	`rcc=12` Ω	Constant part of collector resistance.
46	`rcblx=0` Ω	Resistance Collector Buried Layer extrinsic.
47	`rcbli=0` Ω	Resistance Collector Buried Layer Intrinsic.
48	`rcv=150` Ω	Resistance of un-modulated epilayer.
49	`scrcv=1.25e+03` Ω
		Space charge resistance of epilayer.
50	`ihc=0.004 A`	Critical current for velocity saturation in epilayer.
51	`axi=0.3`	Smoothness parameter for onset of quasi-saturation.
52	`vdc=0.68 V`	CB diffusion voltage.
53	`cje=7.3e-14 F`	Zero-bias EB depletion capacitance.
54	`vde=0.95 V`	EB diffusion voltage.
55	`pe=0.4`	EB grading coefficient.
56	`xcje=0.4`	Sidewall fraction of EB depletion capacitance.
57	`cbeo=0 F`	EB overlap capacitance.
58	`cjc=7.8e-14 F`	Zero-bias CB depletion capacitance.
59	`vdcctc=0.68 V`	CB diffusion voltage of depletion capacitance.
60	`pc=0.5`	CB grading coefficient.
61	`swvchc=0`	Switch of Vch for CB depletion capacitance.
62	`swvjunc=0`	Switch of Vjunc for collector junction capacitance.
63	`xp=0.35`	Constant part of Cjc.
64	`mc=0.5`	Coefficient for current modulation of CB depletion capacitance.
65	`xcjc=0.032`	Fraction of CB depletion capacitance under the emitter.
66	`cbco=0 F`	CB overlap capacitance.
67	`mtau=1`	Non-ideality factor of emitter stored charge.
68	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
69	`taub=4.2e-12 s`	Transit time of stored base charge.
70	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
71	`taur=5.2e-10 s`	Transit time of reverse extrinsic stored base charge.
72	`deg=0 eV`	Bandgap difference over the base.
73	`xrec=0`	Pre-factor of the recombination part of Ib1.
74	`xqb=0.333`	Emitter-fraction of base diffusion charge.
75	`ke=0`	Fraction of QE in excess phase shift.
76	`aqbo=0.3`	Temperature coefficient of zero-bias base charge.
77	`ae=0`	Temperature coefficient of resistivity of the emitter.
78	`ab=1`	Temperature coefficient of resistivity of the base.
79	`aepi=2.5`	Temperature coefficient of resistivity of the epilayer.
80	`aex=0.62`	Temperature coefficient of resistivity of the extrinsic base.
81	`ac=2`	Temperature coefficient of resistivity of the collector contact.
82	`acx=1.3`	Temperature coefficient of extrinsic reverse base current.
83	`acbl=2`	Temperature coefficient of resistivity of the collector buried layer.
84	`vgb=1.17 V`	Band-gap voltage of base.
85	`vgc=1.18 V`	Band-gap voltage of collector.
86	`vge=1.12 V`	Band-gap voltage of emitter.
87	`vgcx=1.12 V`	Band-gap voltage of extrinsic collector.
88	`vgj=1.15 V`	Band-gap voltage recombination EB junction.
89	`vgzeb=1.15 V`	Band-gap voltage at Tref for EB tunneling.
90	`avgeb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for EB tunneling.
91	`tvgeb=636 K`	Temperature coefficient of band-gap voltage for EB tunneling.
92	`vgzcb=1.15 V`	Band-gap voltage at Tref for CB tunneling.
93	`avgcb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for CB tunneling.
94	`tvgcb=636 K`	Temperature coefficient of band-gap voltage for CB tunneling.
95	`dvgte=0.05 V`	Band-gap voltage difference of emitter stored charge.
96	`dais=0`	Fine tuning of temperature dependence of CE saturation current.
97	`tnff=0 /K`	Temperature coefficient of nff.
98	`tnfr=0 /K`	Temperature coefficient of nfr.
99	`tbavl=0.0005`	Temperature scaling parameter of bavl when swavl=1.
100	`af=2`	Exponent of Flicker-noise of ideal base current.
101	`afn=2`	Exponent of Flicker-noise of non-ideal base current.
102	`kf=2e-11`	Flicker-noise coefficient of ideal base current.
103	`kfn=2e-11`	Flicker-noise coefficient of non-ideal base current.
104	`kavl=0`	Switch for white noise contribution due to avalanche.
105	`kc=0`	Switch for RF correlation noise model selection.
106	`ftaun=0`	Fraction of noise transit time to total transit time.
107	`iss=4.8e-17 A`	Saturation current of parasitic BCS transistor main current.
108	`icss=0 A`	CS ideal saturation current.
109	`iks=0.000545 A`	Knee current for BCS transistor main current.
110	`cjs=3.15e-13 F`	Zero-bias CS depletion capacitance.
111	`vds=0.62 V`	CS diffusion voltage.
112	`ps=0.34`	CS grading coefficient.
113	`vgs=1.2 V`	Band-gap voltage of the substrate.
114	`as=1.58`	Substrate temperature coefficient.
115	`asub=2`	Temperature coefficient for mobility of minorities in the substrate.
116	`isibrel=0 A`	Saturation current of base current for reliability simulation.
117	`nfibrel=2`	Non-ideality factor of base current for reliability simulation.
118	`gmin=1e-13`	Minimum conductance.
119	`imax=1000 A`	Explosion current.
120	`tnom (degC)`	Parameters measurement temperature.
121	`tr (degC)`	Alias of tnom.
122	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator.Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`jtype`	type: +1=npn and -1=pnp.
2	`r_e (`Ω`)`	Emitter resistance.
3	`rb_c (`Ω`)`	Constant base resistance.
4	`rc_c (`Ω`)`	Collector contact resistance.
5	`rc_blx (`Ω`)`	Extrinsic buried layer resistance.
6	`rc_bli (`Ω`)`	Intrinsic buried layer resistance.
7	`rc (`Ω`)`	Collector resistance.
8	`tk (K)`	Actual temperature.
9	`ic (A)`	External DC collector current.
10	`ib (A)`	External DC base current.
11	`betadc`	External DC current gain Ic/Ib.
12	`ie (A)`	External DC emitter current.
13	`vbe (V)`	External base-emitter bias.
14	`vce (V)`	External collector-emitter bias.
15	`vbc (V)`	External base-collector bias.
16	`isx (A)`	External DC substrate current.
17	`vse (V)`	External substrate-emitter bias.
18	`vbs (V)`	External base-substrate bias.
19	`vsc (V)`	External substrate-collector bias.
20	`vb2e1 (V)`	Internal base-emitter bias.
21	`vb2c2 (V)`	Internal base-collector bias.
22	`vb2c1 (V)`	Internal base-collector bias including epilayer.
23	`vb1c1 (V)`	External base-collector bias without contact resistances.
24	`vc4c1 (V)`	Bias over intrinsic buried layer.
25	`vc3c4 (V)`	Bias over extrinsic buried layer.
26	`ve1e (V)`	Bias over emitter resistance.
27	`in (A)`	Main current.
28	`ic1c2 (A)`	Epilayer current.
29	`ib1b2 (A)`	Pinched-base current.
30	`ib1 (A)`	Ideal forward base current.
31	`ib1s (A)`	Ideal side-wall base current.
32	`ib2s (A)`	Non-ideal side-wall base current.
33	`ibrel (A)`	Additional non-ideal base current for reliability simulation.
34	`izteb (A)`	Zener tunneling current in the emitter base junction.
35	`iztcb (A)`	Zener tunneling current in the collector base junction.
36	`ib2 (A)`	Non-ideal forward base current.
37	`ib3 (A)`	Non-ideal reverse base current.
38	`iavl (A)`	Avalanche current.
39	`iex (A)`	Extrinsic reverse base current.
40	`xiex (A)`	Extrinsic reverse base current.
41	`isub (A)`	Substrate current.
42	`xisub (A)`	Substrate current.
43	`isf (A)`	Substrate failure current.
44	`ire (A)`	Current through emitter resistance.
45	`irbc (A)`	Current through constant base resistance.
46	`ircblx (A)`	Current through extrinsic buried layer resistance.
47	`ircbli (A)`	Current through intrinsic buried layer resistance.
48	`ircc (A)`	Current through collector contact resistance.
49	`qe (coul)`	Emitter charge or emitter neutral charge.
50	`qte (coul)`	Base-emitter depletion charge.
51	`sqte (coul)`	Sidewall base-emitter depletion charge.
52	`qbe (coul)`	Base-emitter diffusion charge.
53	`qbc (coul)`	Base_collector diffusion charge.
54	`qtc (coul)`	Base-collector depletion charge.
55	`qepi (coul)`	Epilayer diffusion charge.
56	`qb1b2 (coul)`	ac current crowding charge.
57	`qtex (coul)`	Extrinsic base-collector depletion charge.
58	`xqtex (coul)`	Extrinsic base-collector depletion charge.
59	`qex (coul)`	Extrinsic base-collector diffusion charge.
60	`xqex (coul)`	Extrinsic base-collector diffusion charge.
61	`qts (coul)`	Collector-substrate depletion charge.
62	`gx (S)`	Forward transconductance.
63	`gy (S)`	Reverse transconductance.
64	`gz (S)`	Reverse transconductance.
65	`sgpi (S)`	Conductance sidewall b-e junction.
66	`gpix (S)`	Conductance floor b-e junction.
67	`gpiy (S)`	Early effect on recombination base current.
68	`gpiz (S)`	Early effect on recombination base current.
69	`gmux (S)`	Early effect on avalanche current limiting.
70	`gmuy (S)`	Conductance of avalanche current.
71	`gmuz (S)`	Conductance of avalanche current.
72	`gmuex (S)`	Conductance of extrinsic b-c junction.
73	`xgmuex (S)`	Conductance of extrinsic b-c junction.
74	`grcvy (S)`	Conductance of epilayer current.
75	`grcvz (S)`	Conductance of epilayer current.
76	`rb_v (`Ω`)`	Variable base resistance.
77	`grbvx (S)`	Early effect on variable base resistance.
78	`grbvy (S)`	Early effect on variable base resistance.
79	`grbvz (S)`	Early effect on variable base resistance.
80	`gs (S)`	Conductance parasitic PNP transistor.
81	`xgs (S)`	Conductance parasitic PNP transistor.
82	`gsf (S)`	Conductance substrate failure current.
83	`scbe (F)`	Capacitance sidewall b-e junction.
84	`cbex (F)`	Capacitance floor b-e junction.
85	`cbey (F)`	Early effect on b-e diffusion charge.
86	`cbez (F)`	Early effect on b-e diffusion charge.
87	`cbcx (F)`	Early effect on b-c diffusion charge.
88	`cbcy (F)`	Capacitance floor b-c junction.
89	`cbcz (F)`	Capacitance floor b-c junction.
90	`cbcex (F)`	Capacitance extrinsic b-c junction.
91	`xcbcex (F)`	Capacitance extrinsic b-c junction.
92	`cb1b2 (F)`	Capacitance AC current crowding.
93	`cb1b2x (F)`	Cross-capacitance AC current crowding.
94	`cb1b2y (F)`	Cross-capacitance AC current crowding.
95	`cb1b2z (F)`	Cross-capacitance AC current crowding.
96	`cts (F)`	Capacitance s-c junction.
97	`gm (S)`	transconductance.
98	`beta`	Current amplification.
99	`gout (S)`	Output conductance.
100	`gmu (S)`	Feedback transconductance.
101	`rb (`Ω`)`	Base resistance.
102	`cbe (F)`	Base-emitter capacitance.
103	`cbc (F)`	Base-collector capacitance.
104	`ft (Hz)`	Good approximation for cut-off frequency.
105	`iqs (A)`	Current at onset of quasi-saturation.
106	`xiwepi`	Thickness of injection layer normalized to epi layer width.
107	`vb2c2star (V)`	Physical value of internal base-collector bias

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.


aavl M-34	gpiy OP-67	kfn M-103	tempeff O-1
ab M-78	gpiz OP-68	level M-1	tepi M-70
ac M-81	grbvx OP-77	m I-6	tk OP-8
acbl M-83	grbvy OP-78	mc M-64	tnff M-97
acx M-82	grbvz OP-79	meff O-2	tnfr M-98
ae M-77	grcvy OP-74	mlf M-21	tnom M-120
aepi M-79	grcvz OP-75	mlfs M-23	tr M-121
aex M-80	gs OP-80	mlr M-27	tref M-5
af M-100	gsf OP-82	mtau M-67	trise I-4
afn M-101	gx OP-62	mult I-2	tvgcb M-94
aqbo M-76	gy OP-63	nbi M-17	tvgeb M-91
area I-7	gz OP-64	nbis M-19	type M-4
as M-114	iavl OP-38	nff M-11	vavl M-40
asub M-115	ib OP-10	nfibrel M-117	vb1c1 OP-23
avgcb M-93	ib1 OP-30	nfr M-12	vb2c1 OP-22
avgeb M-90	ib1b2 OP-29	nzcb M-32	vb2c2 OP-21
axi M-51	ib1s OP-31	nzeb M-30	vb2c2star OP-107
bavl M-37	ib2 OP-36	paramchk M-2	vb2e1 OP-20
beta OP-98	ib2s OP-32	pc M-60	vbc OP-15
betadc OP-11	ib3 OP-37	pe M-55	vbe OP-13
cavl M-35	ibf M-20	printscaled I-3	vbs OP-18
cb1b2 OP-92	ibfs M-22	ps M-112	vc3c4 OP-25
cb1b2x OP-93	ibi M-16	qb1b2 OP-56	vc4c1 OP-24
cb1b2y OP-94	ibis M-18	qbc OP-53	vce OP-14
cb1b2z OP-95	ibr M-26	qbe OP-52	vdc M-52
cbc OP-103	ibrel OP-33	qe OP-49	vdcavl M-38
cbcex OP-90	ibx M-24	qepi OP-55	vdcctc M-59
cbco M-66	ic OP-9	qex OP-59	vde M-54
cbcx OP-87	ic1c2 OP-28	qtc OP-54	vds M-111
cbcy OP-88	icss M-108	qte OP-50	ve1e OP-26
cbcz OP-89	ie OP-12	qtex OP-57	vef M-15
cbe OP-102	iex OP-39	qts OP-61	ver M-14
cbeo M-57	ihc M-50	r_e OP-2	version M-3
cbex OP-84	ik M-13	rb OP-101	vgb M-84
cbey OP-85	ikbx M-25	rb_c OP-3	vgc M-85
cbez OP-86	iks M-109	rb_v OP-76	vgcx M-87
cjc M-58	imax M-119	rbc M-43	vge M-86
cje M-53	in OP-27	rbv M-44	vgj M-88
cjs M-110	iqs OP-105	rc OP-7	vgs M-113
compatible M-122	irbc OP-45	rc_bli OP-6	vgzcb M-92
cts OP-96	ircbli OP-47	rc_blx OP-5	vgzeb M-89
dais M-96	ircblx OP-46	rc_c OP-4	vsc OP-19
deg M-72	ircc OP-48	rcbli M-47	vse OP-17
dta I-1	ire OP-44	rcblx M-46	wavl M-39
dvgte M-95	is M-10	rcc M-45	xcbcex OP-91
exavl M-8	isf OP-43	rcv M-48	xcjc M-65
exmod M-6	isibrel M-116	re M-42	xcje M-56
exphi M-7	iss M-107	region I-5	xext M-28
exsub M-9	isub OP-41	scbe OP-83	xgmuex OP-73
ft OP-104	isx OP-16	scrcv M-49	xgs OP-81
ftaun M-106	itoavl M-36	sfh M-41	xiex OP-40
gm OP-97	izcb M-31	sgpi OP-65	xisub OP-42
gmin M-118	izeb M-29	sqte OP-51	xiwepi OP-106
gmu OP-100	iztcb OP-35	swavl M-33	xp M-63
gmuex OP-72	izteb OP-34	swvchc M-61	xqb M-74
gmux OP-69	jtype OP-1	swvjunc M-62	xqex OP-60
gmuy OP-70	kavl M-104	taub M-69	xqtex OP-58
gmuz OP-71	kc M-105	taue M-68	xrec M-73
gout OP-99	ke M-75	taur M-71
gpix OP-66	kf M-102	tbavl M-99

Compact Bipolar-Transistor Model (bjt505t)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  s  dt ModelName parameter=value ...

Instance Parameters

1	`dta=0 degC`	Difference between the local and global ambient temperatures.
2	`mult=1`	Multiplication factor.
3	`printscaled=0`	Print scaled parameter info if value not equal to zero.
4	`trise=0`	Difference between the local ambient and global ambient temperature.
5	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
6	`m=1`	Alias of mult.
7	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjt505t parameter=value ...

Model Parameters

1	`level=505`	Model level.
2	`paramchk=0`	Level of clip warning info.
3	`version=505`	Model version.
4	`type=npn`	Flag for NPN (1) or PNP (-1) transistor type.Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
5	`tref=25 degC`	Reference temperature.
6	`exmod=1`	Flag for extended modeling of the reverse current gain.
7	`exphi=1`	Flag for distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modeling of avalanche currents.
9	`exsub=1`	Flag for extended modeling of substrate currents.
10	`is=2.2e-17 A`	Saturation current of main current.
11	`nff=1`	Non-ideality factor of forward main current.
12	`nfr=1`	Non-ideality factor of reverse main current.
13	`ik=0.1 A`	CE high injection knee current.
14	`ver=2.5 V`	Reverse Early voltage.
15	`vef=44 V`	Forward Early voltage.
16	`ibi=1e-19 A`	Saturation current of ideal base current.
17	`nbi=1`	Non-ideality factor of ideal base current.
18	`ibis=0 A`	Saturation current of ideal side wall base current.
19	`nbis=1`	Non-ideality factor of ideal side wall base current.
20	`ibf=2.7e-15 A`	Saturation current of non-ideal forward base current.
21	`mlf=2`	Non-ideality factor of non-ideal forward base current.
22	`ibfs=0 A`	Saturation current of non-ideal side wall forward base current.
23	`mlfs=2`	Non-ideality factor of non-ideal side wall forward base current.
24	`ibx=3.14e-18 A`	Saturation current of extrinsic reverse base current.
25	`ikbx=0.0143 A`	Extrinsic CB high injection knee current.
26	`ibr=1e-15 A`	Saturation current of non-ideal reverse base current.
27	`mlr=2`	Non-ideality factor of non-ideal reverse base current.
28	`xext=0.63`	Part of currents and charges that belong to extrinsic region.
29	`izeb=0 A`	Pre-factor of EB Zener tunneling current.
30	`nzeb=22`	Coefficient of EB Zener tunneling current.
31	`izcb=0 A`	Pre-factor of CB Zener tunneling current.
32	`nzcb=22`	Coefficient of CB Zener tunneling current.
33	`swavl=1`	Switch of avalanche factor Gem model.
34	`aavl=400`	aavl of swavl=1 Gem model.
35	`cavl=-0.37`	cavl of swavl=1 Gem model.
36	`itoavl=0.5 A`	Current dependence parameter of swavl=1 Gem model.
37	`bavl=25`	bavl of swavl=1 Gem model.
38	`vdcavl=0.1 V`	CB diffusion voltage dedicated for swavl=1 Gem model.
39	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
40	`vavl=3 V`	Voltage determining curvature of avalanche current.
41	`sfh=0.3`	Current spreading factor of avalanche model when exavl=1.
42	`re=5` Ω	Emitter resistance.
43	`rbc=23` Ω	Constant part of base resistance.
44	`rbv=18` Ω	Zero-bias value of variable part of the base resistance.
45	`rcc=12` Ω	Constant part of collector resistance.
46	`rcblx=0` Ω	Resistance Collector Buried Layer extrinsic.
47	`rcbli=0` Ω	Resistance Collector Buried Layer Intrinsic.
48	`rcv=150` Ω	Resistance of un-modulated epilayer.
49	`scrcv=1.25e+03` Ω
		Space charge resistance of epilayer.
50	`ihc=0.004 A`	Critical current for velocity saturation in epilayer.
51	`axi=0.3`	Smoothness parameter for onset of quasi-saturation.
52	`vdc=0.68 V`	CB diffusion voltage.
53	`cje=7.3e-14 F`	Zero-bias EB depletion capacitance.
54	`vde=0.95 V`	EB diffusion voltage.
55	`pe=0.4`	EB grading coefficient.
56	`xcje=0.4`	Sidewall fraction of EB depletion capacitance.
57	`cbeo=0 F`	EB overlap capacitance.
58	`cjc=7.8e-14 F`	Zero-bias CB depletion capacitance.
59	`vdcctc=0.68 V`	CB diffusion voltage of depletion capacitance.
60	`pc=0.5`	CB grading coefficient.
61	`swvchc=0`	Switch of Vch for CB depletion capacitance.
62	`swvjunc=0`	Switch of Vjunc for collector junction capacitance.
63	`xp=0.35`	Constant part of Cjc.
64	`mc=0.5`	Coefficient for current modulation of CB depletion capacitance.
65	`xcjc=0.032`	Fraction of CB depletion capacitance under the emitter.
66	`cbco=0 F`	CB overlap capacitance.
67	`mtau=1`	Non-ideality factor of emitter stored charge.
68	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
69	`taub=4.2e-12 s`	Transit time of stored base charge.
70	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
71	`taur=5.2e-10 s`	Transit time of reverse extrinsic stored base charge.
72	`deg=0 eV`	Bandgap difference over the base.
73	`xrec=0`	Pre-factor of the recombination part of Ib1.
74	`xqb=0.333`	Emitter-fraction of base diffusion charge.
75	`ke=0`	Fraction of QE in excess phase shift.
76	`aqbo=0.3`	Temperature coefficient of zero-bias base charge.
77	`ae=0`	Temperature coefficient of resistivity of the emitter.
78	`ab=1`	Temperature coefficient of resistivity of the base.
79	`aepi=2.5`	Temperature coefficient of resistivity of the epilayer.
80	`aex=0.62`	Temperature coefficient of resistivity of the extrinsic base.
81	`ac=2`	Temperature coefficient of resistivity of the collector contact.
82	`acx=1.3`	Temperature coefficient of extrinsic reverse base current.
83	`acbl=2`	Temperature coefficient of resistivity of the collector buried layer.
84	`vgb=1.17 V`	Band-gap voltage of base.
85	`vgc=1.18 V`	Band-gap voltage of collector.
86	`vge=1.12 V`	Band-gap voltage of emitter.
87	`vgcx=1.12 V`	Band-gap voltage of extrinsic collector.
88	`vgj=1.15 V`	Band-gap voltage recombination EB junction.
89	`vgzeb=1.15 V`	Band-gap voltage at Tref for EB tunneling.
90	`avgeb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for EB tunneling.
91	`tvgeb=636 K`	Temperature coefficient of band-gap voltage for EB tunneling.
92	`vgzcb=1.15 V`	Band-gap voltage at Tref for CB tunneling.
93	`avgcb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for CB tunneling.
94	`tvgcb=636 K`	Temperature coefficient of band-gap voltage for CB tunneling.
95	`dvgte=0.05 V`	Band-gap voltage difference of emitter stored charge.
96	`dais=0`	Fine tuning of temperature dependence of CE saturation current.
97	`tnff=0 /K`	Temperature coefficient of nff.
98	`tnfr=0 /K`	Temperature coefficient of nfr.
99	`tbavl=0.0005`	Temperature scaling parameter of bavl when swavl=1.
100	`af=2`	Exponent of Flicker-noise of ideal base current.
101	`afn=2`	Exponent of Flicker-noise of non-ideal base current.
102	`kf=2e-11`	Flicker-noise coefficient of ideal base current.
103	`kfn=2e-11`	Flicker-noise coefficient of non-ideal base current.
104	`kavl=0`	Switch for white noise contribution due to avalanche.
105	`kc=0`	Switch for RF correlation noise model selection.
106	`ftaun=0`	Fraction of noise transit time to total transit time.
107	`iss=4.8e-17 A`	Saturation current of parasitic BCS transistor main current.
108	`icss=0 A`	CS ideal saturation current.
109	`iks=0.000545 A`	Knee current for BCS transistor main current.
110	`cjs=3.15e-13 F`	Zero-bias CS depletion capacitance.
111	`vds=0.62 V`	CS diffusion voltage.
112	`ps=0.34`	CS grading coefficient.
113	`vgs=1.2 V`	Band-gap voltage of the substrate.
114	`as=1.58`	Substrate temperature coefficient.
115	`asub=2`	Temperature coefficient for mobility of minorities in the substrate.
116	`rth=300 K/W`	Thermal resistance.
117	`cth=3e-09 J/K`	Thermal capacitance.
118	`ath=0`	Temperature coefficient of thermal resistance.
119	`isibrel=0 A`	Saturation current of base current for reliability simulation.
120	`nfibrel=2`	Non-ideality factor of base current for reliability simulation.
121	`gmin=1e-13`	Minimum conductance.
122	`imax=1000 A`	Explosion current.
123	`tnom (degC)`	Parameters measurement temperature.
124	`tr (degC)`	Alias of tnom.
125	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`jtype`	type: +1=npn and -1=pnp.
2	`ic (A)`	External DC collector current.
3	`ib (A)`	External DC base current.
4	`betadc`	External DC current gain Ic/Ib.
5	`ie (A)`	External DC emitter current.
6	`vbe (V)`	External base-emitter bias.
7	`vce (V)`	External collector-emitter bias.
8	`vbc (V)`	External base-collector bias.
9	`isx (A)`	External DC substrate current.
10	`vse (V)`	External substrate-emitter bias.
11	`vbs (V)`	External base-substrate bias.
12	`vsc (V)`	External substrate-collector bias.
13	`vb2e1 (V)`	Internal base-emitter bias.
14	`vb2c2 (V)`	Internal base-collector bias.
15	`vb2c1 (V)`	Internal base-collector bias including epilayer.
16	`vb1c1 (V)`	External base-collector bias without contact resistances.
17	`vc4c1 (V)`	Bias over intrinsic buried layer.
18	`vc3c4 (V)`	Bias over extrinsic buried layer.
19	`ve1e (V)`	Bias over emitter resistance.
20	`in (A)`	Main current.
21	`ic1c2 (A)`	Epilayer current.
22	`ib1b2 (A)`	Pinched-base current.
23	`ib1 (A)`	Ideal forward base current.
24	`ib1s (A)`	Ideal side-wall base current.
25	`ib2s (A)`	Non-ideal side-wall base current.
26	`ibrel (A)`	Additional non-ideal base current for reliability simulation.
27	`izteb (A)`	Zener tunneling current in the emitter base junction.
28	`iztcb (A)`	Zener tunneling current in the collector base junction.
29	`ib2 (A)`	Non-ideal forward base current.
30	`ib3 (A)`	Non-ideal reverse base current.
31	`iavl (A)`	Avalanche current.
32	`iex (A)`	Extrinsic reverse base current.
33	`xiex (A)`	Extrinsic reverse base current.
34	`isub (A)`	Substrate current.
35	`xisub (A)`	Substrate current.
36	`isf (A)`	Substrate failure current.
37	`ire (A)`	Current through emitter resistance.
38	`irbc (A)`	Current through constant base resistance.
39	`ircblx (A)`	Current through extrinsic buried layer resistance.
40	`ircbli (A)`	Current through intrinsic buried layer resistance.
41	`ircc (A)`	Current through collector contact resistance.
42	`qe (coul)`	Emitter charge or emitter neutral charge.
43	`qte (coul)`	Base-emitter depletion charge.
44	`sqte (coul)`	Sidewall base-emitter depletion charge.
45	`qbe (coul)`	Base-emitter diffusion charge.
46	`qbc (coul)`	Base_collector diffusion charge.
4	7 `qtc (coul)`	Base-collector depletion charge.
48	`qepi (coul)`	Epilayer diffusion charge.
49	`qb1b2 (coul)`	ac current crowding charge.
50	`qtex (coul)`	Extrinsic base-collector depletion charge.
51	`xqtex (coul)`	Extrinsic base-collector depletion charge.
52	`qex (coul)`	Extrinsic base-collector diffusion charge.
53	`xqex (coul)`	Extrinsic base-collector diffusion charge.
54	`qts (coul)`	Collector-substrate depletion charge.
55	`gx (S)`	Forward transconductance.
56	`gy (S)`	Reverse transconductance.
57	`gz (S)`	Reverse transconductance.
58	`sgpi (S)`	Conductance sidewall b-e junction.
59	`gpix (S)`	Conductance floor b-e junction.
60	`gpiy (S)`	Early effect on recombination base current.
61	`gpiz (S)`	Early effect on recombination base current.
62	`gmux (S)`	Early effect on avalanche current limiting.
63	`gmuy (S)`	Conductance of avalanche current.
64	`gmuz (S)`	Conductance of avalanche current.
65	`gmuex (S)`	Conductance of extrinsic b-c junction.
66	`xgmuex (S)`	Conductance of extrinsic b-c junction.
67	`grcvy (S)`	Conductance of epilayer current.
68	`grcvz (S)`	Conductance of epilayer current.
69	`rb_v (`Ω`)`	Variable base resistance.
70	`grbvx (S)`	Early effect on variable base resistance.
71	`grbvy (S)`	Early effect on variable base resistance.
72	`grbvz (S)`	Early effect on variable base resistance.
73	`r_e (`Ω`)`	Emitter resistance.
74	`rb_c (`Ω`)`	Constant base resistance.
75	`rc_c (`Ω`)`	Collector contact resistance.
76	`rc_blx (`Ω`)`	Extrinsic buried layer resistance.
77	`rc_bli (`Ω`)`	Intrinsic buried layer resistance.
78	`gs (S)`	Conductance parasitic PNP transistor.
79	`xgs (S)`	Conductance parasitic PNP transistor.
80	`gsf (S)`	Conductance substrate failure current.
81	`scbe (F)`	Capacitance sidewall b-e junction.
82	`cbex (F)`	Capacitance floor b-e junction.
83	`cbey (F)`	Early effect on b-e diffusion charge.
84	`cbez (F)`	Early effect on b-e diffusion charge.
85	`cbcx (F)`	Early effect on b-c diffusion charge.
86	`cbcy (F)`	Capacitance floor b-c junction.
87	`cbcz (F)`	Capacitance floor b-c junction.
88	`cbcex (F)`	Capacitance extrinsic b-c junction.
89	`xcbcex (F)`	Capacitance extrinsic b-c junction.
90	`cb1b2 (F)`	Capacitance AC current crowding.
91	`cb1b2x (F)`	Cross-capacitance AC current crowding.
92	`cb1b2y (F)`	Cross-capacitance AC current crowding.
93	`cb1b2z (F)`	Cross-capacitance AC current crowding.
94	`cts (F)`	Capacitance s-c junction.
95	`gm (S)`	transconductance.
96	`beta`	Current amplification.
97	`gout (S)`	Output conductance.
98	`gmu (S)`	Feedback transconductance.
99	`rb (`Ω`)`	Base resistance.
100	`rc (`Ω`)`	Collector resistance.
101	`cbe (F)`	Base-emitter capacitance.
102	`cbc (F)`	Base-collector capacitance.
103	`ft (Hz)`	Good approximation for cut-off frequency.
104	`iqs (A)`	Current at onset of quasi-saturation.
105	`xiwepi`	Thickness of injection layer normalized to epi layer width.
106	`vb2c2star (V)`	Physical value of internal base-collector bias.
107	`pdiss (W)`	Dissipation.
108	`tk (K)`	Actual temperature.
109	`pwr (W)`	Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.


aavl M-34	gpix OP-59	kfn M-103	taur M-71
ab M-78	gpiy OP-60	level M-1	tbavl M-99
ac M-81	gpiz OP-61	m I-6	tempeff O-1
acbl M-83	grbvx OP-70	mc M-64	tepi M-70
acx M-82	grbvy OP-71	meff O-2	tk OP-108
ae M-77	grbvz OP-72	mlf M-21	tnff M-97
aepi M-79	grcvy OP-67	mlfs M-23	tnfr M-98
aex M-80	grcvz OP-68	mlr M-27	tnom M-123
af M-100	gs OP-78	mtau M-67	tr M-124
afn M-101	gsf OP-80	mult I-2	tref M-5
aqbo M-76	gx OP-55	nbi M-17	trise I-4
area I-7	gy OP-56	nbis M-19	tvgcb M-94
as M-114	gz OP-57	nff M-11	tvgeb M-91
asub M-115	iavl OP-31	nfibrel M-120	type M-4
ath M-118	ib OP-3	nfr M-12	vavl M-40
avgcb M-93	ib1 OP-23	nzcb M-32	vb1c1 OP-16
avgeb M-90	ib1b2 OP-22	nzeb M-30	vb2c1 OP-15
axi M-51	ib1s OP-24	paramchk M-2	vb2c2 OP-14
bavl M-37	ib2 OP-29	pc M-60	vb2c2star OP-106
beta OP-96	ib2s OP-25	pdiss OP-107	vb2e1 OP-13
betadc OP-4	ib3 OP-30	pe M-55	vbc OP-8
cavl M-35	ibf M-20	printscaled I-3	vbe OP-6
cb1b2 OP-90	ibfs M-22	ps M-112	vbs OP-11
cb1b2x OP-91	ibi M-16	pwr OP-109	vc3c4 OP-18
cb1b2y OP-92	ibis M-18	qb1b2 OP-49	vc4c1 OP-17
cb1b2z OP-93	ibr M-26	qbc OP-46	vce OP-7
cbc OP-102	ibrel OP-26	qbe OP-45	vdc M-52
cbcex OP-88	ibx M-24	qe OP-42	vdcavl M-38
cbco M-66	ic OP-2	qepi OP-48	vdcctc M-59
cbcx OP-85	ic1c2 OP-21	qex OP-52	vde M-54
cbcy OP-86	icss M-108	qtc OP-47	vds M-111
cbcz OP-87	ie OP-5	qte OP-43	ve1e OP-19
cbe OP-101	iex OP-32	qtex OP-50	vef M-15
cbeo M-57	ihc M-50	qts OP-54	ver M-14
cbex OP-82	ik M-13	r_e OP-73	version M-3
cbey OP-83	ikbx M-25	rb OP-99	vgb M-84
cbez OP-84	iks M-109	rb_c OP-74	vgc M-85
cjc M-58	imax M-122	rb_v OP-69	vgcx M-87
cje M-53	in OP-20	rbc M-43	vge M-86
cjs M-110	iqs OP-104	rbv M-44	vgj M-88
compatible M-125	irbc OP-38	rc OP-100	vgs M-113
cth M-117	ircbli OP-40	rc_bli OP-77	vgzcb M-92
cts OP-94	ircblx OP-39	rc_blx OP-76	vgzeb M-89
dais M-96	ircc OP-41	rc_c OP-75	vsc OP-12
deg M-72	ire OP-37	rcbli M-47	vse OP-10
dta I-1	is M-10	rcblx M-46	wavl M-39
dvgte M-95	isf OP-36	rcc M-45	xcbcex OP-89
exavl M-8	isibrel M-119	rcv M-48	xcjc M-65
exmod M-6	iss M-107	re M-42	xcje M-56
exphi M-7	isub OP-34	region I-5	xext M-28
exsub M-9	isx OP-9	rth M-116	xgmuex OP-66
ft OP-103	itoavl M-36	scbe OP-81	xgs OP-79
ftaun M-106	izcb M-31	scrcv M-49	xiex OP-33
gm OP-95	izeb M-29	sfh M-41	xisub OP-35
gmin M-121	iztcb OP-28	sgpi OP-58	xiwepi OP-105
gmu OP-98	izteb OP-27	sqte OP-44	xp M-63
gmuex OP-65	jtype OP-1	swavl M-33	xqb M-74
gmux OP-62	kavl M-104	swvchc M-61	xqex OP-53
gmuy OP-63	kc M-105	swvjunc M-62	xqtex OP-51
gmuz OP-64	ke M-75	taub M-69	xrec M-73
gout OP-97	kf M-102	taue M-68

Compact Bipolar-Transistor Model (bjtd504)

This is SimKit 5.0.

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of multiplication factor.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd504 parameter=value ...

Model Parameters

1	`level=504`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	Flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`is=2.2e-17 A`	Collector-emitter saturation current.
10	`ik=0.1 A`	Collector-emitter high injection knee current.
11	`ver=2.5 V`	Reverse Early voltage.
12	`vef=44 V`	Forward Early voltage.
13	`bf=215`	Ideal forward current gain.
14	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
15	`mlf=2`	Non ideality factor of the non-ideal forward base current.
16	`xibi=0`	Part of ideal base current that belongs to the sidewall.
17	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
18	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
19	`bri=7`	Ideal reverse current gain.
20	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
21	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
22	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
23	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
24	`vavl=3 V`	Voltage determining curvature of avalanche current.
25	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
26	`re=5` Ω	Emitter resistance.
27	`rbc=23` Ω	Constant part of the base resistance.
28	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
29	`rcc=12` Ω	Collector contact resistance.
30	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
31	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
32	`rcv=150` Ω	Resistance of the un-modulated epilayer.
33	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
34	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
35	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
36	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
37	`vde=0.95 V`	Emitter-base diffusion voltage.
38	`pe=0.4`	Emitter-base grading coefficient.
39	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
40	`cbeo=0`	Emitter-base overlap capacitance.
41	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
42	`vdc=0.68 V`	Collector-base diffusion voltage.
43	`pc=0.5`	Collector-base grading coefficient.
44	`xp=0.35`	Constant part of Cjc.
45	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
46	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
47	`cbco=0`	Collector-base overlap capacitance.
48	`mtau=1`	Non-ideality factor of the emitter stored charge.
49	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
50	`taub=4.2e-12 s`	Transit time of stored base charge.
51	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
52	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
53	`deg=0 eV`	Bandgap difference over the base.
54	`xrec=0`	Pre-factor of the recombination part of Ib1.
55	`xqb=0.333`	Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
56	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
57	`ae=0`	Temperature coefficient of the resistivity of the emitter.
58	`ab=1`	Temperature coefficient of the resistivity of the base.
59	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
60	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
61	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
62	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
63	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
64	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
65	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
66	`vgb=1.17 V`	Bandgap voltage of the base.
67	`vgc=1.18 V`	Bandgap voltage of the collector.
68	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
69	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
70	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
71	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
72	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
73	`af=2`	Exponent of the Flicker-noise.
74	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
75	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
76	`kavl=0`	Switch for white noise contribution due to avalanche.
77	`kavlver=504`	Switch for avalanche noise of 504.11 and 504.12.
78	`kc=0`	Switch for RF correlation noise model selection.
79	`ke=0`	Fraction of QE in excess phase shift.
80	`ftaun=0`	Fraction of noise transit time to total transit time.
82	`vexlim=400`	Upper limit of exp() function argument for convergence.
83	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
84	`imax=1000 A`	Explosion current.
85	`mvt0=0.0`	Threshold mismatch intercept.
86	`tnom (deg. C)`	Alias of tnom.
87	`tr (deg. C)`	Alias of tnom.
88	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`BetaDC`	External DC current gain Ic/Ib.
5	`Vbe (V)`	External base-emitter bias.
6	`Vbc (V)`	External base-collector bias.
7	`Vce (V)`	External collector-emitter bias.
8	`Vb2e1 (V)`	Internal base-emitter bias.
9	`Vb2c2 (V)`	Internal base-collector bias.
10	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
11	`Vb1c1 (V)`	External base-collector bias without contact resistances.
12	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
13	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
14	`Vc4c1 (V)`	Bias over intrinsic buried layer.
15	`Ve1e (V)`	Bias over emitter resistance.
16	`In (A)`	Main current.
17	`Ic1c2 (A)`	Epilayer current.
18	`Ib1b2 (A)`	Pinched-base current.
19	`Ib1 (A)`	Ideal forward base current.
20	`SIb1 (A)`	Ideal side-wall base current.
21	`Izteb (A)`	Zener tunneling current in the emitter base junction.
22	`Ib2 (A)`	Non-ideal forward base current.
23	`Ib3 (A)`	Non-ideal reverse base current.
24	`Iex (A)`	Extrinsic reverse base current.
25	`XIex (A)`	Extrinsic reverse base current.
26	`Iavl (A)`	Avalanche current.
27	`IRE (A)`	Current through emitter resistance.
28	`IRBC (A)`	Current through constant base resistance.
29	`IRCC (A)`	Current through collector contact resistance.
30	`IRCBLX (A)`	Current through extrinsic collector resistance.
31	`IRCBLI (A)`	Current through intrinsic collector resistance.
32	`Qe (C)`	Emitter charge or emitter neutral charge.
33	`Qte (C)`	Base-emitter depletion charge.
34	`SQte (C)`	Sidewall base-emitter depletion charge.
35	`Qbe (C)`	Base-emitter diffusion charge.
36	`Qbc (C)`	Base-collector diffusion charge.
37	`Qtc (C)`	Base-collector depletion charge.
38	`Qepi (C)`	Epilayer diffusion charge.
39	`Qb1b2 (C)`	AC current crowding charge.
40	`Qtex (C)`	Extrinsic base-collector depletion charge.
41	`XQtex (C)`	Extrinsic base-collector depletion charge.
42	`Qex (C)`	Extrinsic base-collector diffusion charge.
43	`XQex (C)`	Extrinsic base-collector diffusion charge.
44	`gx (1/`Ω`)`	Forward transconductance.
45	`gy (1/`Ω`)`	Reverse transconductance.
46	`gz (1/`Ω`)`	Reverse transconductance.
47	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
48	`gpix (1/`Ω`)`	Conductance floor b-e junction.
49	`gpiy (1/`Ω`)`	Early effect on recombination base current.
50	`gpiz (1/`Ω`)`	Early effect on recombination base current.
51	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
52	`gmuy (1/`Ω`)`	Conductance of avalanche current.
53	`gmuz (1/`Ω`)`	Conductance of avalanche current.
54	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
55	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
56	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
57	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
58	`Rbv (`Ω`)`	Base resistance.
59	`grbvx (1/`Ω`)`	Early-effect on base resistance.
60	`grbvy (1/`Ω`)`	Early-effect on base resistance.
61	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
62	`RE (`Ω`)`	Emitter resistance.
63	`RBC (`Ω`)`	Constant part of the base resistance.
64	`RCC (`Ω`)`	Collector contact resistance.
65	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
66	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
67	`SCbe (F)`	Capacitance sidewall b-e junction.
68	`Cbex (F)`	Capacitance floor b-e junction.
69	`Cbey (F)`	Early effect on b-e diffusion charge.
70	`Cbez (F)`	Early effect on b-e diffusion charge.
71	`Cbcx (F)`	Early effect on b-c diffusion charge.
72	`Cbcy (F)`	Capacitance floor b-c junction.
73	`Cbcz (F)`	Capacitance floor b-c junction.
74	`Cbcex (F)`	Capacitance extrinsic b-c junction.
75	`XCbcex (F)`	Capacitance extrinsic b-c junction.
76	`Cb1b2 (F)`	Capacitance AC current crowding.
77	`Cb1b2x (F)`	Cross-capacitance AC current crowding.
78	`Cb1b2y (F)`	Cross-capacitance AC current crowding.
79	`Cb1b2z (F)`	Cross-capacitance AC current crowding.
80	`gm (1/`Ω`)`	Transconductance.
81	`beta`	Current amplification.
82	`gout (1/`Ω`)`	Output conductance.
83	`gmu (1/`Ω`)`	Feedback transconductance.
84	`RB (`Ω`)`	Base resistance.
85	`Cbe (F)`	Base-emitter capacitance.
86	`Cbc (F)`	Base-collector capacitance.
87	`fT (Hz)`	Good approximation for cut-off frequency.
88	`Iqs (A)`	Current at onset of quasi-saturation.
89	`XiWepi (M)`	Thickness of injection layer.
90	`Vb2c2star (V)`	Physical value of internal base-collector bias.
91	`Pdiss (W)`	Dissipation.
92	`pwr (W)`	Dissipation.
93	`TK (K)`	Actual temperature.
94	`jtype`	Type: +1=npn and -1=pnp.
95	`w_estimate (M)`
96	`l_estimate (M`

Parameter Index

BetaDC OP-4	Rbv OP-58	dvgte M-72	nzeb M-18
Cb1b2 OP-76	SCbe OP-67	exavl M-8	paramchk M-2
Cb1b2x OP-77	SIb1 OP-20	exmod M-6	pc M-43
Cb1b2y OP-78	SQte OP-34	exphi M-7	pe M-38
Cb1b2z OP-79	Sgpi OP-47	fT OP-87	printscaled I-2
Cbc OP-86	TK OP-93	ftaun M-80	pwr OP-92
Cbcex OP-74	Vb1c1 OP-11	gm OP-80	rbc M-27
Cbcx OP-71	Vb1c4 OP-12	gmu OP-83	rbv M-28
Cbcy OP-72	Vb2c1 OP-10	gmuex OP-54	rcbli M-31
Cbcz OP-73	Vb2c2 OP-9	gmux OP-51	rcblx M-30
Cbe OP-85	Vb2c2star OP-90	gmuy OP-52	rcc M-29
Cbex OP-68	Vb2e1 OP-8	gmuz OP-53	rcv M-32
Cbey OP-69	Vbc OP-6	gout OP-82	re M-26
Cbez OP-70	Vbe OP-5	gpix OP-48	region I-4
IRBC OP-28	Vc3c4 OP-13	gpiy OP-49	scrcv M-33
IRCBLI OP-31	Vc4c1 OP-14	gpiz OP-50	sfh M-25
IRCBLX OP-30	Vce OP-7	grbvx OP-59	taub M-50
IRCC OP-29	Ve1e OP-15	grbvy OP-60	taue M-49
IRE OP-27	XCbcex OP-75	grbvz OP-61	taur M-52
Iavl OP-26	XIex OP-25	grcvy OP-56	tempeff O-1
Ib OP-2	XQex OP-43	grcvz OP-57	tepi M-51
Ib1 OP-19	XQtex OP-41	gx OP-44	tnom M-85
Ib1b2 OP-18	Xgmuex OP-55	gy OP-45	tr M-86
Ib2 OP-22	XiWepi OP-89	gz OP-46	tref M-4
Ib3 OP-23	ab M-58	ibf M-14	trise I-3
Ic OP-1	ac M-62	ibr M-20	tvgeb M-71
Ic1c2 OP-17	acbl M-63	ihc M-34	type M-82
Ie OP-3	ae M-57	ik M-10	vavl M-24
Iex OP-24	aepi M-60	imax M-83	vdc M-42
In OP-16	aex M-61	is M-9	vde M-37
Iqs OP-88	af M-73	izeb M-17	vef M-12
Izteb OP-21	aqbo M-56	jtype OP-94	ver M-11
Pdiss OP-91	area I-6	kavl M-76	vexlim M-81
Qb1b2 OP-39	avgeb M-70	kavlver M-77	vgb M-66
Qbc OP-36	axi M-35	kc M-78	vgc M-67
Qbe OP-35	beta OP-81	ke M-79	vgj M-68
Qe OP-32	bf M-13	kf M-74	vgzeb M-69
Qepi OP-38	bri M-19	kfn M-75	vlr M-21
Qex OP-42	cbco M-47	l_estimate OP-96	w_estimate OP-95
Qtc OP-37	cbeo M-40	level M-1	wavl M-23
Qte OP-33	cjc M-41	m I-5	xcjc M-46
Qtex OP-40	cje M-36	mc M-45	xcje M-39
RB OP-84	compatible M-87	meff O-2	xext M-22
RBC OP-63	dais M-59	mexlev M-3	xibi M-16
RCBLI OP-66	deg M-53	mlf M-15	xp M-44
RCBLX OP-65	dta M-5	mtau M-48	xqb M-55
RCC OP-64	dvgbf M-64	mult I-1	xrec M-54
RE OP-62	dvgbr M-65	mvt0 M-84

Compact Bipolar-Transistor Model (bjtd504t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd504t parameter=value ...

Model Parameters

1	`level=504`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	Flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`is=2.2e-17 A`	Collector-emitter saturation current.
10	`ik=0.1 A`	Collector-emitter high injection knee current.
11	`ver=2.5 V`	Reverse Early voltage.
12	`vef=44 V`	Forward Early voltage.
13	`bf=215`	Ideal forward current gain.
14	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
15	`mlf=2`	Non ideality factor of the non-ideal forward base current.
16	`xibi=0`	Part of ideal base current that belongs to the sidewall.
17	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
18	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
19	`bri=7`	Ideal reverse current gain.
20	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
21	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
22	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
23	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
24	`vavl=3 V`	Voltage determining curvature of avalanche current.
25	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
26	`re=5` Ω	Emitter resistance.
27	`rbc=23` Ω	Constant part of the base resistance.
28	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
29	`rcc=12` Ω	Collector contact resistance.
30	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
31	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
32	`rcv=150` Ω	Resistance of the un-modulated epilayer.
33	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
34	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
35	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
36	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
37	`vde=0.95 V`	Emitter-base diffusion voltage.
38	`pe=0.4`	Emitter-base grading coefficient.
39	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
40	`cbeo=0`	Emitter-base overlap capacitance.
41	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
42	`vdc=0.68 V`	Collector-base diffusion voltage.
43	`pc=0.5`	Collector-base grading coefficient.
44	`xp=0.35`	Constant part of Cjc.
45	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
46	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
47	`cbco=0`	Collector-base overlap capacitance.
48	`mtau=1`	Non-ideality factor of the emitter stored charge.
49	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
50	`taub=4.2e-12 s`	Transit time of stored base charge.
51	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
52	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
53	`deg=0 eV`	Bandgap difference over the base.
54	`xrec=0`	Pre-factor of the recombination part of Ib1.
55	`xqb=0.333`	Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
56	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
57	`ae=0`	Temperature coefficient of the resistivity of the emitter.
58	`ab=1`	Temperature coefficient of the resistivity of the base.
59	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
60	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
61	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
62	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
63	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
64	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
65	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
66	`vgb=1.17 V`	Bandgap voltage of the base.
67	`vgc=1.18 V`	Bandgap voltage of the collector.
68	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
69	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
70	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
71	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
72	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
73	`af=2`	Exponent of the Flicker-noise.
74	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
75	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
76	`kavl=0`	Switch for white noise contribution due to avalanche.
77	`kavlver=504`	Switch for avalanche noise of 504.11 and 504.12.
78	`kc=0`	Switch for RF correlation noise model selection.
79	`ke=0`	Fraction of QE in excess phase shift.
80	`ftaun=0`	Fraction of noise transit time to total transit time.
81	`rth=300 K/W`	Thermal resistance.
82	`cth=3e-09 J/K`	Thermal capacitance.
83	`ath=0`	Temperature coefficient of the thermal resistance.
84	`vexlim=400`	Upper limit of exp() function argument for convergence.
85	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
86	`imax=1000 A`	Explosion current.
87	`mvt0=0.0`	Threshold mismatch intercept.
88	`tnom (deg. C)`	Alias of tnom.
99	`tr (deg. C)`	Alias of tnom.
90	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`BetaDC`	External DC current gain Ic/Ib.
5	`Vbe (V)`	External base-emitter bias.
6	`Vbc (V)`	External base-collector bias.
7	`Vce (V)`	External collector-emitter bias.
8	`Vb2e1 (V)`	Internal base-emitter bias.
9	`Vb2c2 (V)`	Internal base-collector bias.
10	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
11	`Vb1c1 (V)`	External base-collector bias without contact resistances.
12	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
13	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
14	`Vc4c1 (V)`	Bias over intrinsic buried layer.
15	`Ve1e (V)`	Bias over emitter resistance.
16	`In (A)`	Main current.
17	`Ic1c2 (A)`	Epilayer current.
18	`Ib1b2 (A)`	Pinched-base current.
19	`Ib1 (A)`	Ideal forward base current.
20	`SIb1 (A)`	Ideal side-wall base current.
21	`Izteb (A)`	Zener tunneling current in the emitter base junction.
22	`Ib2 (A)`	Non-ideal forward base current.
23	`Ib3 (A)`	Non-ideal reverse base current.
24	`Iex (A)`	Extrinsic reverse base current.
25	`XIex (A)`	Extrinsic reverse base current.
26	`Iavl (A)`	Avalanche current.
27	`IRE (A)`	Current through emitter resistance.
28	`IRBC (A)`	Current through constant base resistance.
29	`IRCC (A)`	Current through collector contact resistance.
30	`IRCBLX (A)`	Current through extrinsic collector resistance.
31	`IRCBLI (A)`	Current through intrinsic collector resistance.
32	`Qe (C)`	Emitter charge or emitter neutral charge.
33	`Qte (C)`	Base-emitter depletion charge.
34	`SQte (C)`	Sidewall base-emitter depletion charge.
35	`Qbe (C)`	Base-emitter diffusion charge.
36	`Qbc (C)`	Base-collector diffusion charge.
37	`Qtc (C)`	Base-collector depletion charge.
38	`Qepi (C)`	Epilayer diffusion charge.
39	`Qb1b2 (C)`	AC current crowding charge.
40	`Qtex (C)`	Extrinsic base-collector depletion charge.
41	`XQtex (C)`	Extrinsic base-collector depletion charge.
42	`Qex (C)`	Extrinsic base-collector diffusion charge.
43	`XQex (C)`	Extrinsic base-collector diffusion charge.
44	`gx (1/`Ω`)`	Forward transconductance.
45	`gy (1/`Ω`)`	Reverse transconductance.
46	`gz (1/`Ω`)`	Reverse transconductance.
47	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
48	`gpix (1/`Ω`)`	Conductance floor b-e junction.
49	`gpiy (1/`Ω`)`	Early effect on recombination base current.
50	`gpiz (1/`Ω`)`	Early effect on recombination base current.
51	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
52	`gmuy (1/`Ω`)`	Conductance of avalanche current.
53	`gmuz (1/`Ω`)`	Conductance of avalanche current.
54	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
55	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
56	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
57	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
58	`Rbv (`Ω`)`	Base resistance.
59	`grbvx (1/`Ω`)`	Early-effect on base resistance.
60	`grbvy (1/`Ω`)`	Early-effect on base resistance.
61	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
62	`RE (`Ω`)`	Emitter resistance.
63	`RBC (`Ω`)`	Constant part of the base resistance.
64	`RCC (`Ω`)`	Collector contact resistance.
65	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
66	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
67	`SCbe (F)`	Capacitance sidewall b-e junction.
68	`Cbex (F)`	Capacitance floor b-e junction.
69	`Cbey (F)`	Early effect on b-e diffusion charge.
70	`Cbez (F)`	Early effect on b-e diffusion charge.
71	`Cbcx (F)`	Early effect on b-c diffusion charge.
72	`Cbcy (F)`	Capacitance floor b-c junction.
73	`Cbcz (F)`	Capacitance floor b-c junction.
74	`Cbcex (F)`	Capacitance extrinsic b-c junction.
75	`XCbcex (F)`	Capacitance extrinsic b-c junction.
76	`Cb1b2 (F)`	Capacitance AC current crowding.
77	`Cb1b2x (F)`	Cross-capacitance AC current crowding.
78	`Cb1b2y (F)`	Cross-capacitance AC current crowding.
79	`Cb1b2z (F)`	Cross-capacitance AC current crowding.
80	`gm (1/`Ω`)`	Transconductance.
81	`beta`	Current amplification.
82	`gout (1/`Ω`)`	Output conductance.
83	`gmu (1/`Ω`)`	Feedback transconductance.
84	`RB (`Ω`)`	Base resistance.
85	`Cbe (F)`	Base-emitter capacitance.
86	`Cbc (F)`	Base-collector capacitance.
87	`fT (Hz)`	Good approximation for cut-off frequency.
88	`Iqs (A)`	Current at onset of quasi-saturation.
89	`XiWepi (M)`	Thickness of injection layer.
90	`Vb2c2star (V)`	Physical value of internal base-collector bias.
91	`Pdiss (W)`	Dissipation.
92	`pwr (W)`	Dissipation.
93	`TK (K)`	Actual temperature.
94	`jtype`	Type: +1=npn and -1=pnp.
95	`w_estimate (M)`
96	`l_estimate (M)`

Parameter Index

BetaDC OP-4	SCbe OP-67	dvgte M-72	paramchk M-2
Cb1b2 OP-76	SIb1 OP-20	exavl M-8	pc M-43
Cb1b2x OP-77	SQte OP-34	exmod M-6	pe M-38
Cb1b2y OP-78	Sgpi OP-47	exphi M-7	printscaled I-2
Cb1b2z OP-79	TK OP-93	fT OP-87	pwr OP-92
Cbc OP-86	Vb1c1 OP-11	ftaun M-80	rbc M-27
Cbcex OP-74	Vb1c4 OP-12	gm OP-80	rbv M-28
Cbcx OP-71	Vb2c1 OP-10	gmu OP-83	rcbli M-31
Cbcy OP-72	Vb2c2 OP-9	gmuex OP-54	rcblx M-30
Cbcz OP-73	Vb2c2star OP-90	gmux OP-51	rcc M-29
Cbe OP-85	Vb2e1 OP-8	gmuy OP-52	rcv M-32
Cbex OP-68	Vbc OP-6	gmuz OP-53	re M-26
Cbey OP-69	Vbe OP-5	gout OP-82	region I-4
Cbez OP-70	Vc3c4 OP-13	gpix OP-48	rth M-81
IRBC OP-28	Vc4c1 OP-14	gpiy OP-49	scrcv M-33
IRCBLI OP-31	Vce OP-7	gpiz OP-50	sfh M-25
IRCBLX OP-30	Ve1e OP-15	grbvx OP-59	taub M-50
IRCC OP-29	XCbcex OP-75	grbvy OP-60	taue M-49
IRE OP-27	XIex OP-25	grbvz OP-61	taur M-52
Iavl OP-26	XQex OP-43	grcvy OP-56	tempeff O-1
Ib OP-2	XQtex OP-41	grcvz OP-57	tepi M-51
Ib1 OP-19	Xgmuex OP-55	gx OP-44	tnom M-88
Ib1b2 OP-18	XiWepi OP-89	gy OP-45	tr M-89
Ib2 OP-22	ab M-58	gz OP-46	tref M-4
Ib3 OP-23	ac M-62	ibf M-14	trise I-3
Ic OP-1	acbl M-63	ibr M-20	tvgeb M-71
Ic1c2 OP-17	ae M-57	ihc M-34	type M-85
Ie OP-3	aepi M-60	ik M-10	vavl M-24
Iex OP-24	aex M-61	imax M-86	vdc M-42
In OP-16	af M-73	is M-9	vde M-37
Iqs OP-88	aqbo M-56	izeb M-17	vef M-12
Izteb OP-21	area I-6	jtype OP-94	ver M-11
Pdiss OP-91	ath M-83	kavl M-76	vexlim M-84
Qb1b2 OP-39	avgeb M-70	kavlver M-77	vgb M-66
Qbc OP-36	axi M-35	kc M-78	vgc M-67
Qbe OP-35	beta OP-81	ke M-79	vgj M-68
Qe OP-32	bf M-13	kf M-74	vgzeb M-69
Qepi OP-38	bri M-19	kfn M-75	vlr M-21
Qex OP-42	cbco M-47	l_estimate OP-96	w_estimate OP-95
Qtc OP-37	cbeo M-40	level M-1	wavl M-23
Qte OP-33	cjc M-41	m I-5	xcjc M-46
Qtex OP-40	cje M-36	mc M-45	xcje M-39
RB OP-84	compatible M-90	meff O-2	xext M-22
RBC OP-63	cth M-82	mexlev M-3	xibi M-16
RCBLI OP-66	dais M-59	mlf M-15	xp M-44
RCBLX OP-65	deg M-53	mtau M-48	xqb M-55
RCC OP-64	dta M-5	mult I-1	xrec M-54
RE OP-62	dvgbf M-64	mvt0 M-87
Rbv OP-58	dvgbr M-65	nzeb M-18

Compact Bipolar-Transistor Model (bjtd505)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1	`dta=0 degC`	Difference between the local and global ambient temperatures.
2	`mult=1`	Multiplication factor.
3	`printscaled=0`	Print scaled parameter info if value not equal to zero.
4	`trise=0`	Difference between the local ambient and global ambient temperature.
5	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
6	`m=1`	Alias of mult.
7	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd505 parameter=value ...

Model Parameters

1	`level=505`	Model level.
2	`paramchk=0`	Level of clip warning info.
3	`version=505`	Model version.
4	`type=npn`	Flag for NPN (1) or PNP (-1) transistor type. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
5	`tref=25 degC`	Reference temperature.
6	`exmod=1`	Flag for extended modeling of the reverse current gain.
7	`exphi=1`	Flag for distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modeling of avalanche currents.
9	`is=2.2e-17 A`	Saturation current of main current.
10	`nff=1`	Non-ideality factor of forward main current.
11	`nfr=1`	Non-ideality factor of reverse main current.
12	`ik=0.1 A`	CE high injection knee current.
13	`ver=2.5 V`	Reverse Early voltage.
14	`vef=44 V`	Forward Early voltage.
15	`ibi=1e-19 A`	Saturation current of ideal base current.
16	`nbi=1`	Non-ideality factor of ideal base current.
17	`ibis=0 A`	Saturation current of ideal side wall base current.
18	`nbis=1`	Non-ideality factor of ideal side wall base current.
19	`ibf=2.7e-15 A`	Saturation current of non-ideal forward base current.
20	`mlf=2`	Non-ideality factor of non-ideal forward base current.
21	`ibfs=0 A`	Saturation current of non-ideal side wall forward base current.
22	`mlfs=2`	Non-ideality factor of non-ideal side wall forward base current.
23	`ibx=3.14e-18 A`	Saturation current of extrinsic reverse base current.
24	`ikbx=0.0143 A`	Extrinsic CB high injection knee current.
25	`ibr=1e-15 A`	Saturation current of non-ideal reverse base current.
26	`mlr=2`	Non-ideality factor of non-ideal reverse base current.
27	`xext=0.63`	Part of currents and charges that belong to extrinsic region.
28	`izeb=0 A`	Pre-factor of EB Zener tunneling current.
29	`nzeb=22`	Coefficient of EB Zener tunneling current.
30	`izcb=0 A`	Pre-factor of CB Zener tunneling current.
31	`nzcb=22`	Coefficient of CB Zener tunneling current.
32	`swavl=1`	Switch of avalanche factor Gem model.
33	`aavl=400`	aavl of swavl=1 Gem model.
34	`cavl=-0.37`	cavl of swavl=1 Gem model.
35	`itoavl=0.5 A`	Current dependence parameter of swavl=1 Gem model.
36	`bavl=25`	bavl of swavl=1 Gem model.
37	`vdcavl=0.1 V`	CB diffusion voltage dedicated for swavl=1 Gem model.
38	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
39	`vavl=3 V`	Voltage determining curvature of avalanche current.
40	`sfh=0.3`	Current spreading factor of avalanche model when exavl=1.
41	`re=5` Ω	Emitter resistance.
42	`rbc=23` Ω	Constant part of base resistance.
43	`rbv=18` Ω	Zero-bias value of variable part of the base resistance.
44	`rcc=12` Ω	Constant part of collector resistance.
45	`rcblx=0` Ω	Resistance Collector Buried Layer extrinsic.
46	`rcbli=0` Ω	Resistance Collector Buried Layer Intrinsic.
47	`rcv=150` Ω	Resistance of un-modulated epilayer.
48	`scrcv=1.25e+03` Ω
		Space charge resistance of epilayer.
49	`ihc=0.004 A`	Critical current for velocity saturation in epilayer.
50	`axi=0.3`	Smoothness parameter for onset of quasi-saturation.
51	`vdc=0.68 V`	CB diffusion voltage.
52	`cje=7.3e-14 F`	Zero-bias EB depletion capacitance.
53	`vde=0.95 V`	EB diffusion voltage.
54	`pe=0.4`	EB grading coefficient.
55	`xcje=0.4`	Sidewall fraction of EB depletion capacitance.
56	`cbeo=0 F`	EB overlap capacitance.
57	`cjc=7.8e-14 F`	Zero-bias CB depletion capacitance.
58	`vdcctc=0.68 V`	CB diffusion voltage of depletion capacitance.
59	`pc=0.5`	CB grading coefficient.
60	`swvchc=0`	Switch of Vch for CB depletion capacitance.
61	`swvjunc=0`	Switch of Vjunc for collector junction capacitance.
62	`xp=0.35`	Constant part of Cjc.
63	`mc=0.5`	Coefficient for current modulation of CB depletion capacitance.
64	`xcjc=0.032`	Fraction of CB depletion capacitance under the emitter.
65	`cbco=0 F`	CB overlap capacitance.
66	`mtau=1`	Non-ideality factor of emitter stored charge.
67	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
68	`taub=4.2e-12 s`	Transit time of stored base charge.
69	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
70	`taur=5.2e-10 s`	Transit time of reverse extrinsic stored base charge.
71	`deg=0 eV`	Bandgap difference over the base.
72	`xrec=0`	Pre-factor of the recombination part of Ib1.
73	`xqb=0.333`	Emitter-fraction of base diffusion charge.
74	`ke=0`	Fraction of QE in excess phase shift.
75	`aqbo=0.3`	Temperature coefficient of zero-bias base charge.
76	`ae=0`	Temperature coefficient of resistivity of the emitter.
77	`ab=1`	Temperature coefficient of resistivity of the base.
78	`aepi=2.5`	Temperature coefficient of resistivity of the epilayer.
79	`aex=0.62`	Temperature coefficient of resistivity of the extrinsic base.
80	`ac=2`	Temperature coefficient of resistivity of the collector contact.
81	`acx=1.3`	Temperature coefficient of extrinsic reverse base current.
82	`acbl=2`	Temperature coefficient of resistivity of the collector buried layer.
83	`vgb=1.17 V`	Band-gap voltage of base.
84	`vgc=1.18 V`	Band-gap voltage of collector.
85	`vge=1.12 V`	Band-gap voltage of emitter.
86	`vgcx=1.12 V`	Band-gap voltage of extrinsic collector.
87	`vgj=1.15 V`	Band-gap voltage recombination EB junction.
88	`vgzeb=1.15 V`	Band-gap voltage at Tref for EB tunneling.
89	`avgeb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for EB tunneling.
90	`tvgeb=636 K`	Temperature coefficient of band-gap voltage for EB tunneling.
91	`vgzcb=1.15 V`	Band-gap voltage at Tref for CB tunneling.
92	`avgcb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for CB tunneling.
93	`tvgcb=636 K`	Temperature coefficient of band-gap voltage for CB tunneling.
94	`dvgte=0.05 V`	Band-gap voltage difference of emitter stored charge.
95	`dais=0`	Fine tuning of temperature dependence of CE saturation current.
96	`tnff=0 /K`	Temperature coefficient of nff.
97	`tnfr=0 /K`	Temperature coefficient of nfr.
98	`tbavl=0.0005`	Temperature scaling parameter of bavl when swavl=1.
99	`af=2`	Exponent of Flicker-noise of ideal base current.
100	`afn=2`	Exponent of Flicker-noise of non-ideal base current.
101	`kf=2e-11`	Flicker-noise coefficient of ideal base current.
102	`kfn=2e-11`	Flicker-noise coefficient of non-ideal base current.
103	`kavl=0`	Switch for white noise contribution due to avalanche.
104	`kc=0`	Switch for RF correlation noise model selection.
105	`ftaun=0`	Fraction of noise transit time to total transit time.
106	`isibrel=0 A`	Saturation current of base current for reliability simulation.
107	`nfibrel=2`	Non-ideality factor of base current for reliability simulation.
108	`gmin=1e-13`	Minimum conductance.
109	`imax=1000 A`	Explosion current.
110	`tnom (degC)`	Parameters measurement temperature.
111	`tr (degC)`	Alias of tnom.
112	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`jtype`	type: +1=npn and -1=pnp.
2	`r_e (`Ω`)`	Emitter resistance.
3	`rb_c (`Ω`)`	Constant base resistance.
4	`rc_c (`Ω`)`	Collector contact resistance.
5	`rc_blx (`Ω`)`	Extrinsic buried layer resistance.
6	`rc_bli (`Ω`)`	Intrinsic buried layer resistance.
7	`rc (`Ω`)`	Collector resistance.
8	`tk (K)`	Actual temperature.
9	`ic (A)`	External DC collector current.
10	`ib (A)`	External DC base current.
11	`betadc`	External DC current gain Ic/Ib.
12	`ie (A)`	External DC emitter current.
13	`vbe (V)`	External base-emitter bias.
14	`vce (V)`	External collector-emitter bias.
15	`vbc (V)`	External base-collector bias.
16	`vb2e1 (V)`	Internal base-emitter bias.
17	`vb2c2 (V)`	Internal base-collector bias.
18	`vb2c1 (V)`	Internal base-collector bias including epilayer.
19	`vb1c1 (V)`	External base-collector bias without contact resistances.
20	`vc4c1 (V)`	Bias over intrinsic buried layer.
21	`vc3c4 (V)`	Bias over extrinsic buried layer.
22	`ve1e (V)`	Bias over emitter resistance.
23	`in (A)`	Main current.
24	`ic1c2 (A)`	Epilayer current.
25	`ib1b2 (A)`	Pinched-base current.
26	`ib1 (A)`	Ideal forward base current.
27	`ib1s (A)`	Ideal side-wall base current.
28	`ib2s (A)`	Non-ideal side-wall base current.
29	`ibrel (A)`	Additional non-ideal base current for reliability simulation.
30	`izteb (A)`	Zener tunneling current in the emitter base junction.
31	`iztcb (A)`	Zener tunneling current in the collector base junction.
32	`ib2 (A)`	Non-ideal forward base current.
33	`ib3 (A)`	Non-ideal reverse base current.
34	`iavl (A)`	Avalanche current.
35	`iex (A)`	Extrinsic reverse base current.
36	`xiex (A)`	Extrinsic reverse base current.
37	`ire (A)`	Current through emitter resistance.
38	`irbc (A)`	Current through constant base resistance.
39	`ircblx (A)`	Current through extrinsic buried layer resistance.
40	`ircbli (A)`	Current through intrinsic buried layer resistance.
41	`ircc (A)`	Current through collector contact resistance.
42	`qe (coul)`	Emitter charge or emitter neutral charge.
43	`qte (coul)`	Base-emitter depletion charge.
44	`sqte (coul)`	Sidewall base-emitter depletion charge.
45	`qbe (coul)`	Base-emitter diffusion charge.
46	`qbc (coul)`	Base_collector diffusion charge.
47	`qtc (coul)`	Base-collector depletion charge.
48	`qepi (coul)`	Epilayer diffusion charge.
49	`qb1b2 (coul)`	ac current crowding charge.
50	`qtex (coul)`	Extrinsic base-collector depletion charge.
51	`xqtex (coul)`	Extrinsic base-collector depletion charge.
52	`qex (coul)`	Extrinsic base-collector diffusion charge.
53	`xqex (coul)`	Extrinsic base-collector diffusion charge.
54	`gx (S)`	Forward transconductance.
55	`gy (S)`	Reverse transconductance.
56	`gz (S)`	Reverse transconductance.
57	`sgpi (S)`	Conductance sidewall b-e junction.
58	`gpix (S)`	Conductance floor b-e junction.
59	`gpiy (S)`	Early effect on recombination base current.
60	`gpiz (S)`	Early effect on recombination base current.
61	`gmux (S)`	Early effect on avalanche current limiting.
62	`gmuy (S)`	Conductance of avalanche current.
63	`gmuz (S)`	Conductance of avalanche current.
64	`gmuex (S)`	Conductance of extrinsic b-c junction.
65	`xgmuex (S)`	Conductance of extrinsic b-c junction.
66	`grcvy (S)`	Conductance of epilayer current.
67	`grcvz (S)`	Conductance of epilayer current.
68	`rb_v (`Ω`)`	Variable base resistance.
69	`grbvx (S)`	Early effect on variable base resistance.
70	`grbvy (S)`	Early effect on variable base resistance.
71	`grbvz (S)`	Early effect on variable base resistance.
72	`scbe (F)`	Capacitance sidewall b-e junction.
73	`cbex (F)`	Capacitance floor b-e junction.
74	`cbey (F)`	Early effect on b-e diffusion charge.
75	`cbez (F)`	Early effect on b-e diffusion charge.
76	`cbcx (F)`	Early effect on b-c diffusion charge.
77	`cbcy (F)`	Capacitance floor b-c junction.
78	`cbcz (F)`	Capacitance floor b-c junction.
79	`cbcex (F)`	Capacitance extrinsic b-c junction.
80	`xcbcex (F)`	Capacitance extrinsic b-c junction.
81	`cb1b2 (F)`	Capacitance AC current crowding.
82	`cb1b2x (F)`	Cross-capacitance AC current crowding.
83	`cb1b2y (F)`	Cross-capacitance AC current crowding.
84	`cb1b2z (F)`	Cross-capacitance AC current crowding.
85	`gm (S)`	transconductance.
86	`beta`	Current amplification.
87	`gout (S)`	Output conductance.
88	`gmu (S)`	Feedback transconductance.
89	`rb (`Ω`)`	Base resistance.
90	`cbe (F)`	Base-emitter capacitance.
91	`cbc (F)`	Base-collector capacitance.
92	`ft (Hz)`	Good approximation for cut-off frequency.
93	`iqs (A)`	Current at onset of quasi-saturation.
94	`xiwepi`	Thickness of injection layer normalized to epi layer width.
95	`vb2c2star (V)`	Physical value of internal base-collector bias.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

aavl M-33	gpix OP-58	level M-1	taue M-67
ab M-77	gpiy OP-59	m I-6	taur M-70
ac M-80	gpiz OP-60	mc M-63	tbavl M-98
acbl M-82	grbvx OP-69	meff O-2	tempeff O-1
acx M-81	grbvy OP-70	mlf M-20	tepi M-69
ae M-76	grbvz OP-71	mlfs M-22	tk OP-8
aepi M-78	grcvy OP-66	mlr M-26	tnff M-96
aex M-79	grcvz OP-67	mtau M-66	tnfr M-97
af M-99	gx OP-54	mult I-2	tnom M-110
afn M-100	gy OP-55	nbi M-16	tr M-111
aqbo M-75	gz OP-56	nbis M-18	tref M-5
area I-7	iavl OP-34	nff M-10	trise I-4
avgcb M-92	ib OP-10	nfibrel M-107	tvgcb M-93
avgeb M-89	ib1 OP-26	nfr M-11	tvgeb M-90
axi M-50	ib1b2 OP-25	nzcb M-31	type M-4
bavl M-36	ib1s OP-27	nzeb M-29	vavl M-39
beta OP-86	ib2 OP-32	paramchk M-2	vb1c1 OP-19
betadc OP-11	ib2s OP-28	pc M-59	vb2c1 OP-18
cavl M-34	ib3 OP-33	pe M-54	vb2c2 OP-17
cb1b2 OP-81	ibf M-19	printscaled I-3	vb2c2star OP-95
cb1b2x OP-82	ibfs M-21	qb1b2 OP-49	vb2e1 OP-16
cb1b2y OP-83	ibi M-15	qbc OP-46	vbc OP-15
cb1b2z OP-84	ibis M-17	qbe OP-45	vbe OP-13
cbc OP-91	ibr M-25	qe OP-42	vc3c4 OP-21
cbcex OP-79	ibrel OP-29	qepi OP-48	vc4c1 OP-20
cbco M-65	ibx M-23	qex OP-52	vce OP-14
cbcx OP-76	ic OP-9	qtc OP-47	vdc M-51
cbcy OP-77	ic1c2 OP-24	qte OP-43	vdcavl M-37
cbcz OP-78	ie OP-12	qtex OP-50	vdcctc M-58
cbe OP-90	iex OP-35	r_e OP-2	vde M-53
cbeo M-56	ihc M-49	rb OP-89	ve1e OP-22
cbex OP-73	ik M-12	rb_c OP-3	vef M-14
cbey OP-74	ikbx M-24	rb_v OP-68	ver M-13
cbez OP-75	imax M-109	rbc M-42	version M-3
cjc M-57	in OP-23	rbv M-43	vgb M-83
cje M-52	iqs OP-93	rc OP-7	vgc M-84
compatible M-112	irbc OP-38	rc_bli OP-6	vgcx M-86
dais M-95	ircbli OP-40	rc_blx OP-5	vge M-85
deg M-71	ircblx OP-39	rc_c OP-4	vgj M-87
dta I-1	ircc OP-41	rcbli M-46	vgzcb M-91
dvgte M-94	ire OP-37	rcblx M-45	vgzeb M-88
exavl M-8	is M-9	rcc M-44	wavl M-38
exmod M-6	isibrel M-106	rcv M-47	xcbcex OP-80
exphi M-7	itoavl M-35	re M-41	xcjc M-64
ft OP-92	izcb M-30	region I-5	xcje M-55
ftaun M-105	izeb M-28	scbe OP-72	xext M-27
gm OP-85	iztcb OP-31	scrcv M-48	xgmuex OP-65
gmin M-108	izteb OP-30	sfh M-40	xiex OP-36
gmu OP-88	jtype OP-1	sgpi OP-57	xiwepi OP-94
gmuex OP-64	kavl M-103	sqte OP-44	xp M-62
gmux OP-61	kc M-104	swavl M-32	xqb M-73
gmuy OP-62	ke M-74	swvchc M-60	xqex OP-53
gmuz OP-63	kf M-101	swvjunc M-61	xqtex OP-51
gout OP-87	kfn M-102	taub M-68	xrec M-72

Compact Bipolar-Transistor Model (bjtd505t)

Description

This is SiMKit 5.0

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1	`dta=0 degC`	Difference between the local and global ambient temperatures.
2	`mult=1`	Multiplication factor.
3	`printscaled=0`	Print scaled parameter info if value not equal to zero.
4	`trise=0`	Difference between the local ambient and global ambient temperature.
5	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
6	`m=1`	Alias of mult.
7	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd505t parameter=value ...

Model Parame

ters

1	`level=505`	Model level.
2	`paramchk=0`	Level of clip warning info.
3	`version=505`	Model version.
4	`type=npn`	Flag for NPN (1) or PNP (-1) transistor type. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
5	`tref=25 degC`	Reference temperature.
6	`exmod=1`	Flag for extended modeling of the reverse current gain.
7	`exphi=1`	Flag for distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modeling of avalanche currents.
9	`is=2.2e-17 A`	Saturation current of main current.
10	`nff=1`	Non-ideality factor of forward main current.
11	`nfr=1`	Non-ideality factor of reverse main current.
12	`ik=0.1 A`	CE high injection knee current.
13	`ver=2.5 V`	Reverse Early voltage.
14	`vef=44 V`	Forward Early voltage.
15	`ibi=1e-19 A`	Saturation current of ideal base current.
16	`nbi=1`	Non-ideality factor of ideal base current.
17	`ibis=0 A`	Saturation current of ideal side wall base current.
18	`nbis=1`	Non-ideality factor of ideal side wall base current.
19	`ibf=2.7e-15 A`	Saturation current of non-ideal forward base current.
20	`mlf=2`	Non-ideality factor of non-ideal forward base current.
21	`ibfs=0 A`	Saturation current of non-ideal side wall forward base current.
22	`mlfs=2`	Non-ideality factor of non-ideal side wall forward base current.
23	`ibx=3.14e-18 A`	Saturation current of extrinsic reverse base current.
24	`ikbx=0.0143 A`	Extrinsic CB high injection knee current.
25	`ibr=1e-15 A`	Saturation current of non-ideal reverse base current.
26	`mlr=2`	Non-ideality factor of non-ideal reverse base current.
27	`xext=0.63`	Part of currents and charges that belong to extrinsic region.
28	`izeb=0 A`	Pre-factor of EB Zener tunneling current.
29	`nzeb=22`	Coefficient of EB Zener tunneling current.
30	`izcb=0 A`	Pre-factor of CB Zener tunneling current.
31	`nzcb=22`	Coefficient of CB Zener tunneling current.
32	`swavl=1`	Switch of avalanche factor Gem model.
33	`aavl=400`	aavl of swavl=1 Gem model.
34	`cavl=-0.37`	cavl of swavl=1 Gem model.
35	`itoavl=0.5 A`	Current dependence parameter of swavl=1 Gem model.
36	`bavl=25`	bavl of swavl=1 Gem model.
37	`vdcavl=0.1 V`	CB diffusion voltage dedicated for swavl=1 Gem model.
38	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
39	`vavl=3 V`	Voltage determining curvature of avalanche current.
40	`sfh=0.3`	Current spreading factor of avalanche model when exavl=1.
41	`re=5` Ω	Emitter resistance.
42	`rbc=23` Ω	Constant part of base resistance.
43	`rbv=18` Ω	Zero-bias value of variable part of the base resistance.
44	`rcc=12` Ω	Constant part of collector resistance.
45	`rcblx=0` Ω	Resistance Collector Buried Layer extrinsic.
46	`rcbli=0` Ω	Resistance Collector Buried Layer Intrinsic.
47	`rcv=150` Ω	Resistance of un-modulated epilayer.
48	`scrcv=1.25e+03` Ω
		Space charge resistance of epilayer.
49	`ihc=0.004 A`	Critical current for velocity saturation in epilayer.
50	`axi=0.3`	Smoothness parameter for onset of quasi-saturation.
51	`vdc=0.68 V`	CB diffusion voltage.
52	`cje=7.3e-14 F`	Zero-bias EB depletion capacitance.
53	`vde=0.95 V`	EB diffusion voltage.
54	`pe=0.4`	EB grading coefficient.
55	`xcje=0.4`	Sidewall fraction of EB depletion capacitance.
56	`cbeo=0 F`	EB overlap capacitance.
57	`cjc=7.8e-14 F`	Zero-bias CB depletion capacitance.
58	`vdcctc=0.68 V`	CB diffusion voltage of depletion capacitance.
59	`pc=0.5`	CB grading coefficient.
60	`swvchc=0`	Switch of Vch for CB depletion capacitance.
61	`swvjunc=0`	Switch of Vjunc for collector junction capacitance.
62	`xp=0.35`	Constant part of Cjc.
63	`mc=0.5`	Coefficient for current modulation of CB depletion capacitance.
64	`xcjc=0.032`	Fraction of CB depletion capacitance under the emitter.
65	`cbco=0 F`	CB overlap capacitance.
66	`mtau=1`	Non-ideality factor of emitter stored charge.
67	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
68	`taub=4.2e-12 s`	Transit time of stored base charge.
69	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
70	`taur=5.2e-10 s`	Transit time of reverse extrinsic stored base charge.
71	`deg=0 eV`	Bandgap difference over the base.
72	`xrec=0`	Pre-factor of the recombination part of Ib1.
73	`xqb=0.333`	Emitter-fraction of base diffusion charge.
74	`ke=0`	Fraction of QE in excess phase shift.
75	`aqbo=0.3`	Temperature coefficient of zero-bias base charge.
76	`ae=0`	Temperature coefficient of resistivity of the emitter.
77	`ab=1`	Temperature coefficient of resistivity of the base.
78	`aepi=2.5`	Temperature coefficient of resistivity of the epilayer.
79	`aex=0.62`	Temperature coefficient of resistivity of the extrinsic base.
80	`ac=2`	Temperature coefficient of resistivity of the collector contact.
81	`acx=1.3`	Temperature coefficient of extrinsic reverse base current.
82	`acbl=2`	Temperature coefficient of resistivity of the collector buried layer.
83	`vgb=1.17 V`	Band-gap voltage of base.
84	`vgc=1.18 V`	Band-gap voltage of collector.
85	`vge=1.12 V`	Band-gap voltage of emitter.
86	`vgcx=1.12 V`	Band-gap voltage of extrinsic collector.
87	`vgj=1.15 V`	Band-gap voltage recombination EB junction.
88	`vgzeb=1.15 V`	Band-gap voltage at Tref for EB tunneling.
89	`avgeb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for EB tunneling.
90	`tvgeb=636 K`	Temperature coefficient of band-gap voltage for EB tunneling.
91	`vgzcb=1.15 V`	Band-gap voltage at Tref for CB tunneling.
92	`avgcb=0.000473 V/K`
		Temperature coefficient of band-gap voltage for CB tunneling.
93	`tvgcb=636 K`	Temperature coefficient of band-gap voltage for CB tunneling.
94	`dvgte=0.05 V`	Band-gap voltage difference of emitter stored charge.
95	`dais=0`	Fine tuning of temperature dependence of CE saturation current.
96	`tnff=0 /K`	Temperature coefficient of nff.
97	`tnfr=0 /K`	Temperature coefficient of nfr.
98	`tbavl=0.0005`	Temperature scaling parameter of bavl when swavl=1.
99	`af=2`	Exponent of Flicker-noise of ideal base current.
100	`afn=2`	Exponent of Flicker-noise of non-ideal base current.
101	`kf=2e-11`	Flicker-noise coefficient of ideal base current.
102	`kfn=2e-11`	Flicker-noise coefficient of non-ideal base current.
103	`kavl=0`	Switch for white noise contribution due to avalanche.
104	`kc=0`	Switch for RF correlation noise model selection.
105	`ftaun=0`	Fraction of noise transit time to total transit time.
106	`rth=300 K/W`	Thermal resistance.
107	`cth=3e-09 J/K`	Thermal capacitance.
108	`ath=0`	Temperature coefficient of thermal resistance.
109	`isibrel=0 A`	Saturation current of base current for reliability simulation.
110	`nfibrel=2`	Non-ideality factor of base current for reliability simulation.
111	`gmin=1e-13`	Minimum conductance.
112	`imax=1000 A`	Explosion current.
113	`tnom (degC)`	Parameters measurement temperature.
114	`tr (degC)`	Alias of tnom.
115	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`jtype`	type: +1=npn and -1=pnp.
2	`ic (A)`	External DC collector current.
3	`ib (A)`	External DC base current.
4	`betadc`	External DC current gain Ic/Ib.
5	`ie (A)`	External DC emitter current.
6	`vbe (V)`	External base-emitter bias.
7	`vce (V)`	External collector-emitter bias.
8	`vbc (V)`	External base-collector bias.
9	`vb2e1 (V)`	Internal base-emitter bias.
10	`vb2c2 (V)`	Internal base-collector bias.
11	`vb2c1 (V)`	Internal base-collector bias including epilayer.
12	`vb1c1 (V)`	External base-collector bias without contact resistances.
13	`vc4c1 (V)`	Bias over intrinsic buried layer.
14	`vc3c4 (V)`	Bias over extrinsic buried layer.
15	`ve1e (V)`	Bias over emitter resistance.
16	`in (A)`	Main current.
17	`ic1c2 (A)`	Epilayer current.
18	`ib1b2 (A)`	Pinched-base current.
19	`ib1 (A)`	Ideal forward base current.
20	`ib1s (A)`	Ideal side-wall base current.
21	`ib2s (A)`	Non-ideal side-wall base current.
22	`ibrel (A)`	Additional non-ideal base current for reliability simulation.
23	`izteb (A)`	Zener tunneling current in the emitter base junction.
24	`iztcb (A)`	Zener tunneling current in the collector base junction.
25	`ib2 (A)`	Non-ideal forward base current.
26	`ib3 (A)`	Non-ideal reverse base current.
27	`iavl (A)`	Avalanche current.
28	`iex (A)`	Extrinsic reverse base current.
29	`xiex (A)`	Extrinsic reverse base current.
30	`ire (A)`	Current through emitter resistance.
31	`irbc (A)`	Current through constant base resistance.
32	`ircblx (A)`	Current through extrinsic buried layer resistance.
33	`ircbli (A)`	Current through intrinsic buried layer resistance.
34	`ircc (A)`	Current through collector contact resistance.
35	`qe (coul)`	Emitter charge or emitter neutral charge.
36	`qte (coul)`	Base-emitter depletion charge.
37	`sqte (coul)`	Sidewall base-emitter depletion charge.
38	`qbe (coul)`	Base-emitter diffusion charge.
39	`qbc (coul)`	Base_collector diffusion charge.
40	`qtc (coul)`	Base-collector depletion charge.
41	`qepi (coul)`	Epilayer diffusion charge.
42	`qb1b2 (coul)`	ac current crowding charge.
43	`qtex (coul)`	Extrinsic base-collector depletion charge.
44	`xqtex (coul)`	Extrinsic base-collector depletion charge.
45	`qex (coul)`	Extrinsic base-collector diffusion charge.
46	`xqex (coul)`	Extrinsic base-collector diffusion charge.
47	`gx (S)`	Forward transconductance.
48	`gy (S)`	Reverse transconductance.
49	`gz (S)`	Reverse transconductance.
50	`sgpi (S)`	Conductance sidewall b-e junction.
51	`gpix (S)`	Conductance floor b-e junction.
52	`gpiy (S)`	Early effect on recombination base current.
53	`gpiz (S)`	Early effect on recombination base current.
54	`gmux (S)`	Early effect on avalanche current limiting.
55	`gmuy (S)`	Conductance of avalanche current.
56	`gmuz (S)`	Conductance of avalanche current.
57	`gmuex (S)`	Conductance of extrinsic b-c junction.
58	`xgmuex (S)`	Conductance of extrinsic b-c junction.
59	`grcvy (S)`	Conductance of epilayer current.
60	`grcvz (S)`	Conductance of epilayer current.
61	`rb_v (`Ω`)`	Variable base resistance.
62	`grbvx (S)`	Early effect on variable base resistance.
63	`grbvy (S)`	Early effect on variable base resistance.
64	`grbvz (S)`	Early effect on variable base resistance.
65	`r_e (`Ω`)`	Emitter resistance.
66	`rb_c (`Ω`)`	Constant base resistance.
67	`rc_c (`Ω`)`	Collector contact resistance.
68	`rc_blx (`Ω`)`	Extrinsic buried layer resistance.
69	`rc_bli (`Ω`)`	Intrinsic buried layer resistance.
70	`scbe (F)`	Capacitance sidewall b-e junction.
71	`cbex (F)`	Capacitance floor b-e junction.
72	`cbey (F)`	Early effect on b-e diffusion charge.
73	`cbez (F)`	Early effect on b-e diffusion charge.
74	`cbcx (F)`	Early effect on b-c diffusion charge.
75	`cbcy (F)`	Capacitance floor b-c junction.
76	`cbcz (F)`	Capacitance floor b-c junction.
77	`cbcex (F)`	Capacitance extrinsic b-c junction.
78	`xcbcex (F)`	Capacitance extrinsic b-c junction.
79	`cb1b2 (F)`	Capacitance AC current crowding.
80	`cb1b2x (F)`	Cross-capacitance AC current crowding.
81	`cb1b2y (F)`	Cross-capacitance AC current crowding.
82	`cb1b2z (F)`	Cross-capacitance AC current crowding.
83	`gm (S)`	transconductance.
84	`beta`	Current amplification.
85	`gout (S)`	Output conductance.
86	`gmu (S)`	Feedback transconductance.
87	`rb (`Ω`)`	Base resistance.
88	`rc (`Ω`)`	Collector resistance.
89	`cbe (F)`	Base-emitter capacitance.
90	`cbc (F)`	Base-collector capacitance.
91	`ft (Hz)`	Good approximation for cut-off frequency.
92	`iqs (A)`	Current at onset of quasi-saturation.
93	`xiwepi`	Thickness of injection layer normalized to epi layer width.
94	`vb2c2star (V)`	Physical value of internal base-collector bias.
95	`pdiss (W)`	Dissipation.
96	`tk (K)`	Actual temperature.
97	`pwr (W)`	Power.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.


aavl M-33	gpix OP-51	mc M-63	taur M-70
ab M-77	gpiy OP-52	meff O-2	tbavl M-98
ac M-80	gpiz OP-53	mlf M-20	tempeff O-1
acbl M-82	grbvx OP-62	mlfs M-22	tepi M-69
acx M-81	grbvy OP-63	mlr M-26	tk OP-96
ae M-76	grbvz OP-64	mtau M-66	tnff M-96
aepi M-78	grcvy OP-59	mult I-2	tnfr M-97
aex M-79	grcvz OP-60	nbi M-16	tnom M-113
af M-99	gx OP-47	nbis M-18	tr M-114
afn M-100	gy OP-48	nff M-10	tref M-5
aqbo M-75	gz OP-49	nfibrel M-110	trise I-4
area I-7	iavl OP-27	nfr M-11	tvgcb M-93
ath M-108	ib OP-3	nzcb M-31	tvgeb M-90
avgcb M-92	ib1 OP-19	nzeb M-29	type M-4
avgeb M-89	ib1b2 OP-18	paramchk M-2	vavl M-39
axi M-50	ib1s OP-20	pc M-59	vb1c1 OP-12
bavl M-36	ib2 OP-25	pdiss OP-95	vb2c1 OP-11
beta OP-84	ib2s OP-21	pe M-54	vb2c2 OP-10
betadc OP-4	ib3 OP-26	printscaled I-3	vb2c2star OP-94
cavl M-34	ibf M-19	pwr OP-97	vb2e1 OP-9
cb1b2 OP-79	ibfs M-21	qb1b2 OP-42	vbc OP-8
cb1b2x OP-80	ibi M-15	qbc OP-39	vbe OP-6
cb1b2y OP-81	ibis M-17	qbe OP-38	vc3c4 OP-14
cb1b2z OP-82	ibr M-25	qe OP-35	vc4c1 OP-13
cbc OP-90	ibrel OP-22	qepi OP-41	vce OP-7
cbcex OP-77	ibx M-23	qex OP-45	vdc M-51
cbco M-65	ic OP-2	qtc OP-40	vdcavl M-37
cbcx OP-74	ic1c2 OP-17	qte OP-36	vdcctc M-58
cbcy OP-75	ie OP-5	qtex OP-43	vde M-53
cbcz OP-76	iex OP-28	r_e OP-65	ve1e OP-15
cbe OP-89	ihc M-49	rb OP-87	vef M-14
cbeo M-56	ik M-12	rb_c OP-66	ver M-13
cbex OP-71	ikbx M-24	rb_v OP-61	version M-3
cbey OP-72	imax M-112	rbc M-42	vgb M-83
cbez OP-73	in OP-16	rbv M-43	vgc M-84
cjc M-57	iqs OP-92	rc OP-88	vgcx M-86
cje M-52	irbc OP-31	rc_bli OP-69	vge M-85
compatible M-115	ircbli OP-33	rc_blx OP-68	vgj M-87
cth M-107	ircblx OP-32	rc_c OP-67	vgzcb M-91
dais M-95	ircc OP-34	rcbli M-46	vgzeb M-88
deg M-71	ire OP-30	rcblx M-45	wavl M-38
dta I-1	is M-9	rcc M-44	xcbcex OP-78
dvgte M-94	isibrel M-109	rcv M-47	xcjc M-64
exavl M-8	itoavl M-35	re M-41	xcje M-55
exmod M-6	izcb M-30	region I-5	xext M-27
exphi M-7	izeb M-28	rth M-106	xgmuex OP-58
ft OP-91	iztcb OP-24	scbe OP-70	xiex OP-29
ftaun M-105	izteb OP-23	scrcv M-48	xiwepi OP-93
gm OP-83	jtype OP-1	sfh M-40	xp M-62
gmin M-111	kavl M-103	sgpi OP-50	xqb M-73
gmu OP-86	kc M-104	sqte OP-37	xqex OP-46
gmuex OP-57	ke M-74	swavl M-32	xqtex OP-44
gmux OP-54	kf M-101	swvchc M-60	xrec M-72
gmuy OP-55	kfn M-102	swvjunc M-61
gmuz OP-56	level M-1	taub M-68
gout OP-85	m I-6	taue M-67

Compact Bipolar-Transistor Model (bjtd3500)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd3500 parameter=value ...

Model Parameters

1	`level=3.5e+03`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`is=2.2e-17 A`	Collector-emitter saturation current.
10	`ik=0.1 A`	Collector-emitter high injection knee current.
11	`ver=2.5 V`	Reverse Early voltage.
12	`vef=44 V`	Forward Early voltage.
13	`bf=215`	Ideal forward current gain.
14	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
15	`mlf=2`	Non ideality factor of the non-ideal forward base current.
16	`mhf=1`	Non ideality factor of the non-ideal forward base current.
17	`mlr=2`	Non ideality factor of the non-ideal reverse base current.
18	`mhr=1`	Non ideality factor of the ideal reverse base current.
19	`mf=1`	Non ideality factor of main current.
20	`xibi=0`	Part of ideal base current that belongs to the sidewall.
21	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
22	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
23	`bri=7`	Ideal reverse current gain.
24	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
25	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
26	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
27	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
28	`vavl=3 V`	Voltage determining curvature of avalanche current.
29	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
30	`re=5` Ω	Emitter resistance.
31	`rbc=23` Ω	Constant part of the base resistance.
32	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
33	`rcc=12` Ω	Collector contact resistance.
34	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
35	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
36	`rcv=150` Ω	Resistance of the un-modulated epilayer.
37	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
38	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
39	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
40	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
41	`vde=0.95 V`	Emitter-base diffusion voltage.
42	`pe=0.4`	Emitter-base grading coefficient.
43	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
44	`cbeo=0`	Emitter-base overlap capacitance.
45	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
46	`vdc=0.68 V`	Collector-base diffusion voltage.
47	`pc=0.5`	Collector-base grading coefficient.
48	`xp=0.35`	Constant part of Cjc.
49	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
50	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
51	`cbco=0`	Collector-base overlap capacitance.
52	`vos=0.04 V`	Voltage describing overshoot.
53	`isat=0.067 A`	Saturation current.
54	`repi=6` Ω	Ohmic resistance epilayer.
55	`rdmin=0`	Minimum relative collector doping.
56	`sbjn=0.1`	Smoothness parameter Qtc model.
57	`sbeb=0.1`	Smoothness parameter Qtc model.
58	`etavdr=0.23`	Slope-parameter of Vdrift at high electric field.
59	`nvdr=4`	Power describing saturation behavior of Qtc.
60	`alfaw=0`	Smooth switch for reachthrough modelling.
61	`sw=0.1`	Smoothness parameter for reachthrough modelling.
62	`mtau=1`	Non-ideality factor of the emitter stored charge.
63	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
64	`taub=4.2e-12 s`	Transit time of stored base charge.
65	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
66	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
67	`deg=0 eV`	Bandgap difference over the base.
68	`xrec=0`	Pre-factor of the recombination part of Ib1.
69	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
70	`ae=0`	Temperature coefficient of the resistivity of the emitter.
71	`ab=1`	Temperature coefficient of the resistivity of the base.
72	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
73	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
74	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
75	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
76	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
77	`aisat=-0.37`	Temperature coefficient of the saturation current.
78	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
79	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
80	`vgb=1.17 V`	Bandgap voltage of the base.
81	`vgc=1.18 V`	Bandgap voltage of the collector.
82	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
83	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
84	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
85	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
86	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
87	`af=2`	Exponent of the Flicker-noise.
88	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
89	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
90	`kavl=0`	Switch for white noise contribution due to avalanche.
91	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
92	`imax=1000 A`	Explosion current.
93	`tnom (deg. C)`	alias of tnom.
94	`tr (deg. C)`	alias of tnom.
95	`simkitver=3.4`
96	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`BetaDC`	External DC current gain Ic/Ib.
5	`Vbe (V)`	External base-emitter bias.
6	`Vbc (V)`	External base-collector bias.
7	`Vce (V)`	External collector-emitter bias.
8	`Vb2e1 (V)`	Internal base-emitter bias.
9	`Vb2c2 (V)`	Internal base-collector bias.
10	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
11	`Vb1c1 (V)`	External base-collector bias without contact resistances.
12	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
13	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
14	`Vc4c1 (V)`	Bias over intrinsic buried layer.
15	`Ve1e (V)`	Bias over emitter resistance.
16	`In (A)`	Main current.
17	`Ic1c2 (A)`	Epilayer current.
18	`Ib1b2 (A)`	Pinched-base current.
19	`Ib1 (A)`	Ideal forward base current.
20	`SIb1 (A)`	Ideal side-wall base current.
21	`Izteb (A)`	Zener tunneling current in the emitter base junction.
22	`Ib2 (A)`	Non-ideal forward base current.
23	`Ib3 (A)`	Non-ideal reverse base current.
24	`Iex (A)`	Extrinsic reverse base current.
25	`XIex (A)`	Extrinsic reverse base current.
26	`Iavl (A)`	Avalanche current.
27	`IRE (A)`	Current through emitter resistance.
28	`IRBC (A)`	Current through constant base resistance.
29	`IRCC (A)`	Current through collector contact resistance.
30	`IRCBLX (A)`	Current through extrinsic collector resistance.
31	`IRCBLI (A)`	Current through intrinsic collector resistance.
32	`Qe (C)`	Emitter charge or emitter neutral charge.
33	`Qte (C)`	Base-emitter depletion charge.
34	`SQte (C)`	Sidewall base-emitter depletion charge.
35	`Qbe (C)`	Base-emitter diffusion charge.
36	`Qbc (C)`	Base-collector diffusion charge.
37	`Qtc (C)`	Base-collector depletion charge.
38	`Qepi (C)`	Epilayer diffusion charge.
39	`Qb1b2 (C)`	AC current crowding charge.
40	`Qtex (C)`	Extrinsic base-collector depletion charge.
41	`XQtex (C)`	Extrinsic base-collector depletion charge.
42	`Qex (C)`	Extrinsic base-collector diffusion charge.
43	`XQex (C)`	Extrinsic base-collector diffusion charge.
44	`gx (1/`Ω`)`	Forward transconductance.
45	`gy (1/`Ω`)`	Reverse transconductance.
46	`gz (1/`Ω`)`	Reverse transconductance.
47	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
48	`gpix (1/`Ω`)`	Conductance floor b-e junction.
49	`gpiy (1/`Ω`)`	Early effect on recombination base current.
50	`gpiz (1/`Ω`)`	Early effect on recombination base current.
51	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
52	`gmuy (1/`Ω`)`	Conductance of avalanche current.
53	`gmuz (1/`Ω`)`	Conductance of avalanche current.
54	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
55	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
56	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
57	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
58	`Rbv (`Ω`)`	Base resistance.
59	`grbvx (1/`Ω`)`	Early-effect on base resistance.
60	`grbvy (1/`Ω`)`	Early-effect on base resistance.
61	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
62	`RE (`Ω`)`	Emitter resistance.
63	`RBC (`Ω`)`	Constant part of the base resistance.
64	`RCC (`Ω`)`	Collector contact resistance.
65	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
66	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
67	`SCbe (F)`	Capacitance sidewall b-e junction.
68	`Cbex (F)`	Capacitance floor b-e junction.
69	`Cbey (F)`	Early effect on b-e diffusion charge.
70	`Cbez (F)`	Early effect on b-e diffusion charge.
71	`Cbcx (F)`	Early effect on b-c diffusion charge.
72	`Cbcy (F)`	Capacitance floor b-c junction.
73	`Cbcz (F)`	Capacitance floor b-c junction.
74	`Cbcex (F)`	Capacitance extrinsic b-c junction.
75	`XCbcex (F)`	Capacitance extrinsic b-c junction.
76	`Cb1b2 (F)`	Capacitance AC current crowding.
77	`Cb1b2x (F)`	Cross-capacitance AC current crowding.
78	`Cb1b2y (F)`	Cross-capacitance of the AC current crowding.
79	`Cb1b2z (F)`	Cross-capacitance of the AC current crowding.
80	`gm (1/`Ω`)`	Transconductance.
81	`beta`	Current amplification.
82	`gout (1/`Ω`)`	Output conductance.
83	`gmu (1/`Ω`)`	Feedback transconductance.
84	`RB (`Ω`)`	Base resistance.
85	`Cbe (F)`	Base-emitter capacitance.
86	`Cbc (F)`	Base-collector capacitance.
87	`fT (Hz)`	Good approximation for cut-off frequency.
88	`Iqs (A)`	Current at onset of quasi-saturation.
89	`XiWepi (M)`	Thickness of injection layer.
90	`Vb2c2star (V)`	Physical value of internal base-collector bias.
91	`Pdiss (W)`	Dissipation.
92	`TK (K)`	Actual temperature.
93	`pwr (W)`	Power.

Parameter Index

BetaDC OP-4	SCbe OP-67	dvgte M-85	pc M-46
Cb1b2 OP-76	SIb1 OP-20	etavdr M-57	pe M-41
Cb1b2x OP-77	SQte OP-34	exavl M-7	printscaled I-2
Cb1b2y OP-78	Sgpi OP-47	exmod M-5	pwr OP-93
Cb1b2z OP-79	TK OP-92	exphi M-6	rbc M-30
Cbc OP-86	Vb1c1 OP-11	fT OP-87	rbv M-31
Cbcex OP-74	Vb1c4 OP-12	gm OP-80	rcbli M-34
Cbcx OP-71	Vb2c1 OP-10	gmu OP-83	rcblx M-33
Cbcy OP-72	Vb2c2 OP-9	gmuex OP-54	rcc M-32
Cbcz OP-73	Vb2c2star OP-90	gmux OP-51	rcv M-35
Cbe OP-85	Vb2e1 OP-8	gmuy OP-52	rdmin M-54
Cbex OP-68	Vbc OP-6	gmuz OP-53	re M-29
Cbey OP-69	Vbe OP-5	gout OP-82	region I-4
Cbez OP-70	Vc3c4 OP-13	gpix OP-48	repi M-53
IRBC OP-28	Vc4c1 OP-14	gpiy OP-49	sbeb M-56
IRCBLI OP-31	Vce OP-7	gpiz OP-50	sbjn M-55
IRCBLX OP-30	Ve1e OP-15	grbvx OP-59	scrcv M-36
IRCC OP-29	XCbcex OP-75	grbvy OP-60	sfh M-28
IRE OP-27	XIex OP-25	grbvz OP-61	sw M-60
Iavl OP-26	XQex OP-43	grcvy OP-56	taub M-63
Ib OP-2	XQtex OP-41	grcvz OP-57	taue M-62
Ib1 OP-19	Xgmuex OP-55	gx OP-44	taur M-65
Ib1b2 OP-18	XiWepi OP-89	gy OP-45	tempeff O-1
Ib2 OP-22	ab M-70	gz OP-46	tepi M-64
Ib3 OP-23	ac M-74	ibf M-13	tnom M-92
Ic OP-1	acbl M-75	ibr M-23	tr M-93
Ic1c2 OP-17	ae M-69	ihc M-37	tref M-3
Ie OP-3	aepi M-72	ik M-9	trise I-3
Iex OP-24	aex M-73	imax M-91	tvgeb M-84
In OP-16	af M-86	is M-8	type M-90
Iqs OP-88	aisat M-76	isat M-52	vavl M-27
Izteb OP-21	alfaw M-59	izeb M-20	vdc M-45
Pdiss OP-91	aqbo M-68	kavl M-89	vde M-40
Qb1b2 OP-39	area I-6	kf M-87	vef M-11
Qbc OP-36	avgeb M-83	kfn M-88	ver M-10
Qbe OP-35	axi M-38	level M-1	vgb M-79
Qe OP-32	beta OP-81	m I-5	vgc M-80
Qepi OP-38	bf M-12	mc M-48	vgj M-81
Qex OP-42	bri M-22	meff O-2	vgzeb M-82
Qtc OP-37	cbco M-50	mf M-18	vlr M-24
Qte OP-33	cbeo M-43	mhf M-15	vos M-51
Qtex OP-40	cjc M-44	mhr M-17	wavl M-26
RB OP-84	cje M-39	mlf M-14	xcjc M-49
RBC OP-63	compatible M-94	mlr M-16	xcje M-42
RCBLI OP-66	dais M-71	mtau M-61	xext M-25
RCBLX OP-65	deg M-66	mult I-1	xibi M-19
RCC OP-64	dta M-4	nvdr M-58	xp M-47
RE OP-62	dvgbf M-77	nzeb M-21	xrec M-67
Rbv OP-58	dvgbr M-78	paramchk M-2

Compact Bipolar-Transistor Model (bjtd3500t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  c  b  e  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=fwd`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `sat`, `rev`, and `fwd`.
5	`m=1`	Alias of mult.
6	`area=1`	Multiplication factor for bjt devices.

Model Definition

model modelName bjtd3500t parameter=value ...

Model Parameters

1	`level=3.5e+03`	Bipolar Level.
2	`paramchk=0`	Level of clip warning info.
3	`mexlev=2`	Flag for ELDO model.
4	`tref=25 deg. C`	Reference temperature.
5	`dta=0 K`	Difference between the local ambient and global ambient temperature.
6	`exmod=1`	Flag for extended modelling of reverse current gain.
7	`exphi=1`	Flag for the distributed high-frequency effects in transient.
8	`exavl=0`	Flag for extended modelling of avalanche currents.
9	`is=2.2e-17 A`	Collector-emitter saturation current.
10	`ik=0.1 A`	Collector-emitter high injection knee current.
11	`ver=2.5 V`	Reverse Early voltage.
12	`vef=44 V`	Forward Early voltage.
13	`bf=215`	Ideal forward current gain.
14	`ibf=2.7e-15 A`	Saturation current of the non-ideal forward base current.
15	`mlf=2`	Non ideality factor of the non-ideal forward base current.
16	`mhf=1`	Non ideality factor of the non-ideal forward base current.
17	`mlr=2`	Non ideality factor of the non-ideal reverse base current.
18	`mhr=1`	Non ideality factor of the ideal reverse base current.
19	`mf=1`	Non ideality factor of main current.
20	`xibi=0`	Part of ideal base current that belongs to the sidewall.
21	`izeb=0 A`	Pre-factor of emitter-base Zener tunneling current.
22	`nzeb=22`	Coefficient of emitter-base Zener tunneling current.
23	`bri=7`	Ideal reverse current gain.
24	`ibr=1e-15 A`	Saturation current of the non-ideal reverse base current.
25	`vlr=0.2 V`	Cross-over voltage of the non-ideal reverse base current.
26	`xext=0.63`	Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
27	`wavl=1.1e-06 m`	Epilayer thickness used in weak-avalanche model.
28	`vavl=3 V`	Voltage determining curvature of avalanche current.
29	`sfh=0.3`	Current spreading factor of avalanche model (when EXAVL=1).
30	`re=5` Ω	Emitter resistance.
31	`rbc=23` Ω	Constant part of the base resistance.
32	`rbv=18` Ω	Zero-bias value of the variable part of the base resistance.
33	`rcc=12` Ω	Collector contact resistance.
34	`rcblx=0`	Resistance of collector buried layer under the extrinsic transistor.
35	`rcbli=0`	Resistance of collector buried layer under the Intrinsic transistor.
36	`rcv=150` Ω	Resistance of the un-modulated epilayer.
37	`scrcv=1.25e+03` Ω
		Space charge resistance of the epilayer.
38	`ihc=0.004 A`	Critical current for velocity saturation in the epilayer.
39	`axi=0.3`	Smoothness parameter for the onset of quasi-saturation.
40	`cje=7.3e-14 F`	Zero-bias emitter-base depletion capacitance.
41	`vde=0.95 V`	Emitter-base diffusion voltage.
42	`pe=0.4`	Emitter-base grading coefficient.
43	`xcje=0.4`	Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
44	`cbeo=0`	Emitter-base overlap capacitance.
45	`cjc=7.8e-14 F`	Zero-bias collector-base depletion capacitance.
46	`vdc=0.68 V`	Collector-base diffusion voltage.
47	`pc=0.5`	Collector-base grading coefficient.
48	`xp=0.35`	Constant part of Cjc.
49	`mc=0.5`	Coefficient for the current modulation of the collector-base depletion capacitance.
50	`xcjc=0.032`	Fraction of the collector-base depletion capacitance under the emitter.
51	`cbco=0`	Collector-base overlap capacitance.
52	`vos=0.04 V`	Voltage describing overshoot.
53	`isat=0.067 A`	Saturation current.
54	`repi=6` Ω	Ohmic resistance epilayer.
55	`rdmin=0`	Minimum relative collector doping.
56	`sbjn=0.1`	Smoothness parameter Qtc model.
57	`sbeb=0.1`	Smoothness parameter Qtc model.
58	`etavdr=0.23`	Slope-parameter of Vdrift at high electric field.
59	`nvdr=4`	Power describing saturation behavior of Qtc.
60	`alfaw=0`	Smooth switch for reachthrough modelling.
61	`sw=0.1`	Smoothness parameter for reachthrough modelling.
62	`mtau=1`	Non-ideality factor of the emitter stored charge.
63	`taue=2e-12 s`	Minimum transit time of stored emitter charge.
64	`taub=4.2e-12 s`	Transit time of stored base charge.
65	`tepi=4.1e-11 s`	Transit time of stored epilayer charge.
66	`taur=5.2e-10 s`	Transit time of reverse extrinsic base charge.
67	`deg=0 eV`	Bandgap difference over the base.
68	`xrec=0`	Pre-factor of the recombination part of Ib1.
69	`aqbo=0.3`	Temperature coefficient of the zero-bias base charge.
70	`ae=0`	Temperature coefficient of the resistivity of the emitter.
71	`ab=1`	Temperature coefficient of the resistivity of the base.
72	`dais=0`	Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
73	`aepi=2.5`	Temperature coefficient of the resistivity of the epilayer.
74	`aex=0.62`	Temperature coefficient of the resistivity of the extrinsic base.
75	`ac=2`	Temperature coefficient of the resistivity of the collector contact.
76	`acbl=2`	Temperature coefficient of the resistivity of the collector buried layer.
77	`aisat=-0.37`	Temperature coefficient of the saturation current.
78	`dvgbf=0.05 V`	Bandgap voltage difference of forward current gain.
79	`dvgbr=0.045 V`	Bandgap voltage difference of reverse current gain.
80	`vgb=1.17 V`	Bandgap voltage of the base.
81	`vgc=1.18 V`	Bandgap voltage of the collector.
82	`vgj=1.15 V`	Bandgap voltage recombination emitter-base junction.
83	`vgzeb=1.15 V`	Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
84	`avgeb=0.000473 V/K`
		Temperature scaling coefficient of emitter-base Zener tunneling current.
85	`tvgeb=636 K`	Temperature scaling coefficient of emitter-base Zener tunneling current.
86	`dvgte=0.05 V`	Bandgap voltage difference of emitter stored charge.
87	`af=2`	Exponent of the Flicker-noise.
88	`kf=2e-11`	Flicker-noise coefficient of the ideal base current.
89	`kfn=2e-11`	Flicker-noise coefficient of the non-ideal base current.
90	`kavl=0`	Switch for white noise contribution due to avalanche.
91	`rth=300 K/W`	Thermal resistance.
92	`cth=3e-09 J/K`	Thermal capacitance.
93	`ath=0`	Temperature coefficient of the thermal resistance.
94	`dtmax=1e+03 K`	Maximal dynamic temperature increase.
95	`exrth=0`	Flag for extended modelling of non-linear thermal resistance.
96	`type=npn`	Transistor gender. Possible values are `npn`, `pnp`, `npnv`, `pnpv`, `npnl`, and `pnpl`.
97	`imax=1000 A`	Explosion current.
98	`tnom (deg. C)`	Alias of tnom.
99	`tr (deg. C)`	Alias of tnom.
100	`simkitver=3.4`
101	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`Ic (A)`	External DC collector current.
2	`Ib (A)`	External DC base current.
3	`Ie (A)`	External DC emitter current.
4	`BetaDC`	External DC current gain Ic/Ib.
5	`Vbe (V)`	External base-emitter bias.
6	`Vbc (V)`	External base-collector bias.
7	`Vce (V)`	External collector-emitter bias.
8	`Vb2e1 (V)`	Internal base-emitter bias.
9	`Vb2c2 (V)`	Internal base-collector bias.
10	`Vb2c1 (V)`	Internal base-collector bias including epilayer.
11	`Vb1c1 (V)`	External base-collector bias without contact resistances.
12	`Vb1c4 (V)`	External base-collector bias with contact resistance RCBLI.
13	`Vc3c4 (V)`	External collector-collector bias over contact resistance RCBLX.
14	`Vc4c1 (V)`	Bias over intrinsic buried layer.
15	`Ve1e (V)`	Bias over emitter resistance.
16	`In (A)`	Main current.
17	`Ic1c2 (A)`	Epilayer current.
18	`Ib1b2 (A)`	Pinched-base current.
19	`Ib1 (A)`	Ideal forward base current.
20	`SIb1 (A)`	Ideal side-wall base current.
21	`Izteb (A)`	Zener tunneling current in the emitter base junction.
22	`Ib2 (A)`	Non-ideal forward base current.
23	`Ib3 (A)`	Non-ideal reverse base current.
24	`Iex (A)`	Extrinsic reverse base current.
25	`XIex (A)`	Extrinsic reverse base current.
26	`Iavl (A)`	Avalanche current.
27	`IRE (A)`	Current through emitter resistance.
28	`IRBC (A)`	Current through constant base resistance.
29	`IRCC (A)`	Current through collector contact resistance.
30	`IRCBLX (A)`	Current through extrinsic collector resistance.
31	`IRCBLI (A)`	Current through intrinsic collector resistance.
32	`Qe (C)`	Emitter charge or emitter neutral charge.
33	`Qte (C)`	Base-emitter depletion charge.
34	`SQte (C)`	Sidewall base-emitter depletion charge.
35	`Qbe (C)`	Base-emitter diffusion charge.
36	`Qbc (C)`	Base-collector diffusion charge.
37	`Qtc (C)`	Base-collector depletion charge.
38	`Qepi (C)`	Epilayer diffusion charge.
39	`Qb1b2 (C)`	AC current crowding charge.
40	`Qtex (C)`	Extrinsic base-collector depletion charge.
41	`XQtex (C)`	Extrinsic base-collector depletion charge.
42	`Qex (C)`	Extrinsic base-collector diffusion charge.
43	`XQex (C)`	Extrinsic base-collector diffusion charge.
44	`gx (1/`Ω`)`	Forward transconductance.
45	`gy (1/`Ω`)`	Reverse transconductance.
46	`gz (1/`Ω`)`	Reverse transconductance.
47	`Sgpi (1/`Ω`)`	Conductance sidewall b-e junction.
48	`gpix (1/`Ω`)`	Conductance floor b-e junction.
49	`gpiy (1/`Ω`)`	Early effect on recombination base current.
50	`gpiz (1/`Ω`)`	Early effect on recombination base current.
51	`gmux (1/`Ω`)`	Early effect on avalanche current limiting.
52	`gmuy (1/`Ω`)`	Conductance of avalanche current.
53	`gmuz (1/`Ω`)`	Conductance of avalanche current.
54	`gmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
55	`Xgmuex (1/`Ω`)`	Conductance extrinsic b-c junction.
56	`grcvy (1/`Ω`)`	Conductance of the epilayer current.
57	`grcvz (1/`Ω`)`	Conductance of the epilayer current.
58	`Rbv (`Ω`)`	Base resistance.
59	`grbvx (1/`Ω`)`	Early-effect on base resistance.
60	`grbvy (1/`Ω`)`	Early-effect on base resistance.
61	`grbvz (1/`Ω`)`	Early-effect on base resistance:.
62	`RE (`Ω`)`	Emitter resistance.
63	`RBC (`Ω`)`	Constant part of the base resistance.
64	`RCC (`Ω`)`	Collector contact resistance.
65	`RCBLX (`Ω`)`	Resistance of collector buried layer under the extrinsic transistor.
66	`RCBLI (`Ω`)`	Resistance of collector buried layer under the Intrinsic transistor.
67	`SCbe (F)`	Capacitance sidewall b-e junction.
68	`Cbex (F)`	Capacitance floor b-e junction.
69	`Cbey (F)`	Early effect on b-e diffusion charge.
70	`Cbez (F)`	Early effect on b-e diffusion charge.
71	`Cbcx (F)`	Early effect on b-c diffusion charge.
72	`Cbcy (F)`	Capacitance floor b-c junction.
73	`Cbcz (F)`	Capacitance floor b-c junction.
74	`Cbcex (F)`	Capacitance extrinsic b-c junction.
75	`XCbcex (F)`	Capacitance extrinsic b-c junction.
76	`Cb1b2 (F)`	Capacitance of the AC current crowding.
77	`Cb1b2x (F)`	Cross-capacitance of the AC current crowding.
78	`Cb1b2y (F)`	Cross-capacitance of the AC current crowding.
79	`Cb1b2z (F)`	Cross-capacitance of the AC current crowding.
80	`gm (1/`Ω`)`	Transconductance.
81	`beta`	Current amplification.
82	`gout (1/`Ω`)`	Output conductance.
83	`gmu (1/`Ω`)`	Feedback transconductance.
84	`RB (`Ω`)`	Base resistance.
85	`Cbe (F)`	Base-emitter capacitance.
86	`Cbc (F)`	Base-collector capacitance.
87	`fT (Hz)`	Good approximation for cut-off frequency.
88	`Iqs (A)`	Current at onset of quasi-saturation.
89	`XiWepi (M)`	Thickness of injection layer.
90	`Vb2c2star (V)`	Physical value of internal base-collector bias.
91	`Pdiss (W)`	Dissipation.
92	`TK (K)`	Actual temperature.
93	`pwr (W)`	Power.

Parameter Index

BetaDC OP-4	SIb1 OP-20	dvgbr M-78	paramchk M-2
Cb1b2 OP-76	SQte OP-34	dvgte M-85	pc M-46
Cb1b2x OP-77	Sgpi OP-47	etavdr M-57	pe M-41
Cb1b2y OP-78	TK OP-92	exavl M-7	printscaled I-2
Cb1b2z OP-79	Vb1c1 OP-11	exmod M-5	pwr OP-93
Cbc OP-86	Vb1c4 OP-12	exphi M-6	rbc M-30
Cbcex OP-74	Vb2c1 OP-10	exrth M-94	rbv M-31
Cbcx OP-71	Vb2c2 OP-9	fT OP-87	rcbli M-34
Cbcy OP-72	Vb2c2star OP-90	gm OP-80	rcblx M-33
Cbcz OP-73	Vb2e1 OP-8	gmu OP-83	rcc M-32
Cbe OP-85	Vbc OP-6	gmuex OP-54	rcv M-35
Cbex OP-68	Vbe OP-5	gmux OP-51	rdmin M-54
Cbey OP-69	Vc3c4 OP-13	gmuy OP-52	re M-29
Cbez OP-70	Vc4c1 OP-14	gmuz OP-53	region I-4
IRBC OP-28	Vce OP-7	gout OP-82	repi M-53
IRCBLI OP-31	Ve1e OP-15	gpix OP-48	rth M-90
IRCBLX OP-30	XCbcex OP-75	gpiy OP-49	sbeb M-56
IRCC OP-29	XIex OP-25	gpiz OP-50	sbjn M-55
IRE OP-27	XQex OP-43	grbvx OP-59	scrcv M-36
Iavl OP-26	XQtex OP-41	grbvy OP-60	sfh M-28
Ib OP-2	Xgmuex OP-55	grbvz OP-61	sw M-60
Ib1 OP-19	XiWepi OP-89	grcvy OP-56	taub M-63
Ib1b2 OP-18	ab M-70	grcvz OP-57	taue M-62
Ib2 OP-22	ac M-74	gx OP-44	taur M-65
Ib3 OP-23	acbl M-75	gy OP-45	tempeff O-1
Ic OP-1	ae M-69	gz OP-46	tepi M-64
Ic1c2 OP-17	aepi M-72	ibf M-13	tnom M-97
Ie OP-3	aex M-73	ibr M-23	tr M-98
Iex OP-24	af M-86	ihc M-37	tref M-3
In OP-16	aisat M-76	ik M-9	trise I-3
Iqs OP-88	alfaw M-59	imax M-96	tvgeb M-84
Izteb OP-21	aqbo M-68	is M-8	type M-95
Pdiss OP-91	area I-6	isat M-52	vavl M-27
Qb1b2 OP-39	ath M-92	izeb M-20	vdc M-45
Qbc OP-36	avgeb M-83	kavl M-89	vde M-40
Qbe OP-35	axi M-38	kf M-87	vef M-11
Qe OP-32	beta OP-81	kfn M-88	ver M-10
Qepi OP-38	bf M-12	level M-1	vgb M-79
Qex OP-42	bri M-22	m I-5	vgc M-80
Qtc OP-37	cbco M-50	mc M-48	vgj M-81
Qte OP-33	cbeo M-43	meff O-2	vgzeb M-82
Qtex OP-40	cjc M-44	mf M-18	vlr M-24
RB OP-84	cje M-39	mhf M-15	vos M-51
RBC OP-63	compatible M-99	mhr M-17	wavl M-26
RCBLI OP-66	cth M-91	mlf M-14	xcjc M-49
RCBLX OP-65	dais M-71	mlr M-16	xcje M-42
RCC OP-64	deg M-66	mtau M-61	xext M-25
RE OP-62	dta M-4	mult I-1	xibi M-19
Rbv OP-58	dtmax M-93	nvdr M-58	xp M-47
SCbe OP-67	dvgbf M-77	nzeb M-21	xrec M-67

JFETIDG Model (jfetidg)

JFETIDG is a compact model for four-terminal (that is, independent dual-gate) JFETs that is applicable to all regions of operation. It can also be applied to:

resistors (diffused or polysilicon) with a metal shield
the drift region of LDMOS transistors
the collector resistance of four-terminal vertical BJTs
junctionless MOS transistors

This chapter contains the following information for the JFETIDG model:

Model Concepts

A cross-section of an n-channel device that can be modeled by JFETIDG is shown below (the thicker dashed lines represent the edges of the depletion regions in the channel region, from both the bottom and top gates; the metallurgical thickness of the channel is tm).

JFETIDG uses a unified, physical formulation for depletion pinching of the conducting channel that is applicable to both pn-junction gates and MOS gates, and independent of gate type (apart from how the JFETIDG model parameters are computed from physical parameters). JFETIDG uses an exact solution for depletion pinching modulation of the channel current Ids, which is more accurate than linearizing with respect to the mid-point-potential. JFETIDG also models:

self-heating
velocity saturation (inherited from the r3 model)
channel length modulation (CLM)
drain-induced barrier lowering (DIBL)
impact ionization (i.e. weak avalanche)
mobility modulation, by both bottom and top gate biases
parasitic pn-junction leakage current
parasitic pn-junction breakdown current
depletion and diffusion capacitance for pn-junction gates
fixed capacitance for MOS gates
selectable local (single geometry) and global (geometry dependent) models
channel conductance and depletion modulation parameters can either be specified directly or calculated from physical doping and layer thickness values
temperature dependence
noise, including from parasitic pn-junction currents
statistical variations

The large-signal equivalent circuit for JFETIDG is shown below.

The power generated by the electrical part of JFETIDG (the left side of the network above), Ith, drives the thermal part of JFETIDG (the right side of the network above), and the behavior of the electrical part depends on the local temperature rise, Temp(dt), generated by the thermal part. The electrical and thermal parts are solved self-consistently. The parasitic capacitances include both linear components (for MOS gates) and non-linear components (for pn-junction gates); The parasitic currents include pn-junction, breakdown, and impact ionization components; these are only applicable to pn-junction gates so are turned off for MOS gates.

Terminology and Notation

non-pinch-off	operation when neither end of a device is pinched off (analogous to MOSFET strong inversion non-saturation)
drain pinch-off	operation when one end of a device is pinched off (analogous to MOSFET strong inversion saturation)
source pinch-off	operation when both ends of a device are pinched off (analogous to MOSFET weak inversion)
Vds	voltage across the intrinsic body portion of the device `V(di)-V(si)`
Ids	current through the intrinsic body portion of the device (see equivalent circuit below)
Vgbs	bottom-gate to intrinsic source voltage `V(gb)-V(si)`
Vgbd	bottom-gate to intrinsic drain voltage `V(gb)-V(di)`
Vgts	top-gate to intrinsic source voltage `V(gt)-V(si)`
Vgtd	top-gate to intrinsic drain voltage `V(gt)-V(di)`
[sd]	applies for both source and drain
[bt]	applies for both bottom and top gate
[ap]	applies for both area and perimeter components
[2]	also applies to an optional second perimeter component

Parameters and nodes are set in Courier New font. k is Boltzmann's constant, q is the magnitude of the electronic charge, and ni is the intrinsic carrier concentration. The thermal voltage is t=kT/q

where

For convenience, and to be able to help debug circuit problems and understand what is the dominant source of nonlinearity, the physical effects can be turned off individually.

setting swlin to 1 turns off all nonlinearities
setting swet to 0 turns off self-heating
setting the thermal conductance gth to 0 when the local termperature rise port dt is not connected turns off self-heating
setting ecrit to be >=109 V/m turns off modeling of velocity saturation (the breakdown field for silicon is about 3×107 V/m)
setting dfbfac to 0 turns off modeling of depletion pinching by the bottom gate
setting dftfac to 0 turns off modeling of depletion pinching by the top gate

Any combination of sources of nonlinearity can be switched off by appropriate specification of these parameters.

Model Version

SPECTRE supports JFETIDG model version 1.0.0.

Component Statements

This device is supported within altergroups.

Instance Definition

Name ( d gb s gt [dt] ) ModelName <parameter=value> ...

Instance Parameters

1	`w=1e-06 m`	Design width of JFET body.
2	`l=1e-06 m`	Design length of JFET body.
3	`wd=0 m`	Dogbone width (total; not per side).
4	`asb=0 m^2`	Area of source to bottom gate.
5	`ast=0 m^2`	Area of source to top gate.
6	`psb=0 m`	Perimeter of source to bottom gate.
7	`psb2=0 m`	Perimeter of source to bottom gate (2nd component).
8	`pst=0 m`	Perimeter of source to top gate.
9	`pst2=0 m`	Perimeter of source to top gate (2nd component).
10	`cs=0`	Number of contacts at source end.
11	`adb=0 m^2`	Area of drain to bottom gate.
12	`adt=0 m^2`	Area of drain to top gate.
13	`pdb=0 m`	Perimeter of drain to bottom gate.
14	`pdb2=0 m`	Perimeter of drain to bottom gate (2nd component).
15	`pdt=0 m`	Perimeter of drain to top gate.
16	`pdt2=0 m`	Perimeter of drain to top gate (2nd component).
17	`cd=0`	Number of contacts at drain end.
18	`trise=0 degC`	Local temperature delta to ambient (before self-heating).
19	`dta=0 degC`	Local temperature delta to ambient (before self-heating).
20	`dtemp=0 degC`	Local temperature delta to ambient (before self-heating).
21	`nsmm_rsh=0`	Number of standard deviations of local variation for rsh.
22	`nsmm_w=0`	Number of standard deviations of local variation for w.
23	`nsmm_l=0`	Number of standard deviations of local variation for l.
24	`mult`=`1`	Multiplicity factor.
25	`swnoise=1`	Switch to include noise: 0=no and 1=yes.
26	`swet=1`	Switch to include self-heating: 0=no and 1=yes.
27	`swlin=0`	Switch to force linearity: 0=no and 1=yes.
28	`swmman`	Switch to enable mismatch analysis: 0=no and 1=yes.
29	`m=1`	Alias of mult.

The switch parameters can also be specified as model parameters, and a value specified on an instance line overrides a value specified on a model card.

The following figure shows how the instance parameters should be determined for a typical JFET layout.

The end region dogbone may be asymmetric between the two sides.

The total width of the source end region is:

where the contact width, contact spacing, and contact-to-edge distances, wc, wc2c, and wc2e, respectively, are shown in the layout.

If cs is zero (which happens for non-end sections of a multi-section model) then as[bt] and ps[bt] should be calculated as half of the area and length direction perimeter, respectively, of the body of the JFET (that is, 0.5·w·l and l, respectivey). If cs is greater than zero then the area and (non-body adjacent) perimeter of the left end region should be added to these values. Similarly for ad[bt] and pd[bt].

Model Definition

model ModelName jfetidg <parameter=value> ...

Model Parameters

The naming convention for parameters follows the PSP style. Global model parameters append o, l, w, lw, and so on, to the name of the associated local geometry model parameter.

1	`level=1`	Model level.
2	`paramchk=0`	Model parameter checking selector.
3	`version=1`	Model version.
4	`subversion=0`	Model subversion.
5	`revision=2`	Model revision.
6	`tmin=100 degC`	Minimum ambient temperature.
7	`tmax=500 degC`	Maximum ambient temperature.
8	`gmin=1e-12 S`	Minimum parasitic conductance.
9	`imax=1 A`	Current at which to linearize diode currents.
10	`scale=1`	Scale factor for instance geometries.
11	`shrink=0 %`	Shrink percentage for instance geometries.
12	`rthresh=0.001 Ω`	Threshold to switch end resistance to V=I*R form.
13	`type=n`	JFET type: +1=n-body and -1=p-body. Possible values are `n` and `p`.
14	`swbgmos=0`	Switch to indicate bottom gate type: 0=pn-junction and 1=mos.
15	`swtgmos=0`	Switch to indicate top gate type: 0=pn-junction and 1=mos.
16	`swgeo=1`	Switch for geometry modeling: 0=local and 1=global.
17	`swgdep=1`	Switch for geometry mapping basis: 0=drawn and 1=effective.
18	`tnom=27 degC`	Nominal (reference) temperature.
19	`lmin=0.0 m`	Minimum allowed drawn length.
20	`lmax=9e+09 m`	Maximum allowed drawn length.
21	`wmin=0.0 m`	Minimum allowed drawn width.
22	`wmax=9.9e+09 m`	Maximum allowed drawn width.
23	`jmax=1e+08 A/m`	Maximum current density.
24	`vmax=9.9e09 V`	Maximum drain or source voltage w.r.t. either gate.
25	`tminclip=(-100) degC`
		Clip minimum temperature.
26	`tmaxclip=800 degC`	Clip maximum temperature.
27	`grpo=1e-12`	Minimum body conductance in pinch-off (ratio w.r.t. Vc=0).
28	`xw=0 m`	Width offset (total).
29	`nwxw=0 m`	Narrow width offset correction coefficient.
30	`wexw=0 m`	Webbing effect width offset correction coefficient (for dogboned devices).
31	`fdrwo=1e-06 m`	Finite doping width offset reference width.
32	`fdxwo=0 m`	Finite doping width offset width value for wide devices.
33	xl=0 m	Length offset (total).
34	xlw=0 m	Width dependence of length offset.
35	dxlsat=0 m	Additional length offset for velocity saturation calculation.
36	tm=5e-07 m	Channel thickness (metallurgical).
37	nc=1e+23 /m^3	Channel doping concentration.
38	nb=1e+22 /m^3	Bottom-gate doping concentration.
39	toxb=4e-07 m	Bottom-gate oxide thickness.
40	vfbb=0 V	Bottom-gate flatband voltage.
41	nt=1e+26 /m^3	Top-gate doping concentration.
42	toxt=4e-07 m	Top-gate xide thickness.
43	vfbt=0 V	Top-gate flatband voltage.
44	dfb=0.01 /V^0.5	Bottom-gate depletion factor (overrides calculation if specified).
45	dfbo=0.01 /V^0.5	`dfb` geometry independent part.
46	dfbl=0	`dfb 1/l` coefficient.
47	dfble=1	`dfb 1/l` exponent.
48	dfbw=0	`dfb 1/w` coefficient.
49	dfbwe=1	`dfb 1/w` exponent.
50	dfblw=0	`dfb 1/(l*w)` coefficient.
51	dfbfac=1	`dfb` adjustment coefficient.
52	psirb=2 V	Bottom-gate depletion potential (overrides calculation if specified).
53	psirbo=2 V	`psirb` geometry independent part.
54	psirbl=0	`psirb 1/l` coefficient.
55	psirble=1	`psirb 1/l` exponent.
56	psirbw=0	`psirb 1/w` coefficient.
57	psirbwe=1	`psirb 1/w` exponent.
58	psirblw=0	`psirb 1/(l*w)` coefficient.
59	psirbfac=1	`psirb` adjustment coefficient.
60	dft=0.01 /V^0.5	Top-gate depletion factor (overrides calculation if specified).
61	dfto=0.01 /V^0.5	`dft` geometry independent part.
62	dftl=0.0	`dft 1/l` coefficient.
63	dftle=1.0	`dft 1/l` exponent.
64	dftw=0.0	`dft 1/w` coefficient.
65	dftwe=1.0	`dft 1/w` exponent.
66	dftlw=0.0	`dft 1/(l*w)` coefficient.
67	dftfac=1.0	`dft` adjustment coefficient.
68	psirt=2.0 V	Top-gate depletion potential (overrides calculation if specified).
69	psirto=2.0 V	`psirt` geometry independent part.
70	psirtl=0.0	`psirt 1/l` coefficient.
71	psirtle=1.0	`psirt 1/l` exponent.
72	psirtw=0.0	`psirt 1/w` coefficient.
73	psirtwe=1.0	`psirt 1/w` exponent.
74	psirtlw=0.0	`psirt 1/(l*w)` coefficient.
75	psirtfac=1.0	`psirt` adjustment coefficient.
76	mu0=0.05 m^2/V/s	Low-field mobility
77	r0=100 Ohm	Zero-bias resistance.
78	rsh0=100 Ohm/sq	Zero-bias sheet resistance (overrides calculation if specified).
79	rzd=100 Ohm	Zero-depletion resistance.
80	rshzd=100 Ohm/sq	Zero-depletion sheet resistance (overrides calculation if specified).
81	rcs=0 Ohm	Source contact resistance.
82	rcd=0 Ohm	Drain contact resistance.
83	rc=0 Ohm	Resistance per contact.
84	rcw=0 Ohm	Width adjustment for contact resistance.
85	diblb=0	Bottom-gate `dibl`.
86	diblbl=0	`diblb l` dependence coefficient.
87	diblt=0	Top-gate `dibl`.
88	dibltl=0	`diblt l` dependence coefficient.
89	diblle=1	`dibl l` dependence exponent.
90	diblv=0.1 V	`dibl` voltage offset.
91	dible=0.5	`dibl` voltage exponent.
92	clm1=0	`clm` linear component.
93	clm1l=0	`clm1 l` dependence coefficient.
94	clm1le=1	`clm1 l` dependence exponent.
95	clm1c=0 /V	`clm1 V(gx)` dependence coefficient.
96	clm2=0	`clm` nonlinear component.
97	clm2l=0	`clm2 l` dependence coefficient.
98	clm2le=1	`clm2 l` dependence exponent.
99	clm2v=0.1 V	`clm2` voltage offset.
100	clm2e=0.5	`clm2` voltage exponent.
101	ats=0.0 V	Saturation smoothing parameter.
102	atso=0 V	`ats` geometry independent part.
103	atsl=0 V	`ats 1/l` coefficient.
104	axs=0	Second saturation smoothing parameter.
105	axso=0	`axs` geometry independent part.
106	axsl=0	`axs 1/l` coefficient.
107	nspo=1	Slope parameter under source pinch-off.
108	nspoo=1	`nspo` geometry independent part.
109	nspol=0	`nspo 1/l` coefficient.
110	nspole=1	`nspo 1/l` exponent.
111	nspow=0	`nspo 1/w` coefficient.
112	nspowe=1	`nspo 1/w` exponent.
113	nspolw=0	`nspo 1/(l*w)` coefficient.
114	alphab=0 /V	Bottom-gate impact ionization current prefactor.
115	alphabo=0 /V	`alphab` geometry independent part.
116	alphabl=0 /V	`alphab 1/l` coefficient.
117	alphat=0 /V	Top-gate impact ionization current prefactor.
118	alphato=0 /V	`alphat` geometry independent part.
119	alphatl=0 /V	`alphat 1/l` coefficient.
120	beta=10 V	Impact ionization current exponent for both gates.
121	mumb=0 /V	Bottom-gate mobility modulation coefficient.
122	mumboff=0 V	Bottom-gate mobility modulation voltage offset.
123	mumbs=1	Bottom-gate mobility modulation smoothing parameter.
124	mumbe=1	Bottom-gate mobility modulation exponent.
125	mumbo=0 /V	`mumb` geometry independent part.
126	mumbl=0	`mumb 1/l` coefficient.
127	mumbw=0	`mumb 1/w` coefficient.
128	mumblw=0	`mumb 1/(l*w)` coefficient.
129	mumt=0 /V	Top-gate mobility modulation coefficient.
130	mumtoff=0 V	Top-gate mobility modulation voltage offset.
131	mumts=1	Top-gate mobility modulation smoothing parameter.
132	mumte=1	Top-gate mobility modulation exponent.
133	mumto=0 /V	`mumt` geometry independent part.
134	mumtl=0	`mumt 1/l` coefficient.
135	mumtw=0	`mumt 1/w` coefficient.
136	mumtlw=0	`mumt 1/(l*w)` coefficient.
137	mumii1=0 /V^2	Linear impact ionization mobility modulation coefficient.
138	mumii2=0 /V^4	Quadratic impact ionization mobility modulation coefficient.
139	vcrit=4 V	Velocity saturation critical voltage.
140	ecrit=4e+06 V/m	Velocity saturation critical field.
141	vcorn=0.4 V	Velocity saturation corner voltage.
142	ecorn=4e+05 V/m	Velocity saturation corner field.
143	du=0.02	Mobility reduction at ecorn.
144	voffspo=0	Source pinchoff offset (number of `nspo*phi_t`).
145	moffspo=1	Source pinchoff smoothing factor.
146	gth=0 W/K	Thermal conductance.
147	`gtho=0 W/K`	`gth` geometry independent part.
148	`gthp=0 W/K/m`	`gth` perimeter component.
149	`gtha=0 W/K/m`²	`gth` area component.
150	`gthc=0 W/K`	`gth` contact component.
151	`cth=0 s W/K`	Thermal capacitance.
152	`ctho=0 s W/K`	`cth` geometry independent part.
153	`cthp=0 s W/K/m`	`cth` perimeter component.
154	`ctha=0 s W/K/m`²	`cth` area component.
155	`cthc=0 s W/K`	cth contact component.
156	`fc=0.9`	Ddepletion capacitance linearization factor.
157	`isab=0 A/m`²	Bottom-gate diode saturation current per unit area.
158	`nab=1`	Bottom-gate ideality factor for `isa`.
159	`cab=0 F/m`²	Bottom-gate fixed capacitance per unit area.
160	`cjab=0 F/m`²	Bottom-gate depletion capacitance per unit area.
161	`pab=0.75 V`	Bottom-gate built-in potential for cja.
162	`mab=0.33`	Bottom-gate grading coefficient for cja.
163	`ajab=-0.5 V`	Bottom-gate smoothing parameter for cja.
164	`ispb=0 A/m`	Bottom-gate diode saturation current per unit perimeter.
165	`npb=1`	Bottom-gate ideality factor for isp.
166	`cpb=0 F/m`	Bottom-gate fixed capacitance per unit perimeter.
167	`cpb2=0 F/m`	Bottom-gate fixed capacitance per unit perimeter (2nd component).
168	`cjpb=0 F/m`	Bottom-gate depletion capacitance per unit perimeter.
169	`ppb=0.75 V`	Bottom-gate built-in potential for cjp.
170	`mpb=0.33`	Bottom-gate grading coefficient for cjp.
171	`ajpb=-0.5 V`	Bottom-gate smoothing parameter for cjp.
172	`ttb=0 s`	Bottom-gate transit time for diffusion charge.
173	`vbvb=0 V`	Bottom-gate breakdown voltage.
174	`nbvb=1`	Bottom-gate ideality factor for breakdown current.
175	`isat=0 A/m`²	Top-gate diode saturation current per unit area.
176	`nat=1`	Top-gate ideality factor for isa.
177	`cat=0 F/m`²	Top-gate fixed capacitance per unit area.
178	`cjat=0 F/m`²	Top-gate depletion capacitance per unit area.
179	`pat=0.75 V`	Top-gate built-in potential for cja.
180	`mat=0.33`	Top-gate grading coefficient for cja.
181	`ajat=-0.5 V`	Top-gate smoothing parameter for cja.
182	`ispt=0 A/m`	Top-gate diode saturation current per unit perimeter.
183	`npt=1`	Top-gate ideality factor for isp.
184	`cpt=0 F/m`	Top-gate fixed capacitance per unit perimeter.
185	`cpt2=0 F/m`	Top-gate fixed capacitance per unit perimeter (2nd component).
186	`cjpt=0 F/m`	Top-gate depletion capacitance per unit perimeter.
187	`ppt=0.75 V`	Top-gate built-in potential for cjp.
188	`mpt=0.33`	Top-gate grading coefficient for cjp.
189	`ajpt=-0.5 V`	Top-gate smoothing parameter for cjp.
190	`ttt=0 s`	Top-gate transit time for diffusion charge.
191	`vbvt=0 V`	Top-gate breakdown voltage.
192	`nbvt=1`	Top-gate ideality factor for breakdown current.
193	`ibv=1e-06 A`	Current at breakdown.
194	`kfn=0 m`²	Flicker noise coefficient.
195	`afn=2`	Flicker noise current exponent.
196	`bfn=1`	Flicker noise 1/f exponent.
197	`swfngeo=0`	Switch for flicker noise geometry calculation: 0=drawn and 1=effective.
198	`tc1psirb=0 /K`	`psirb` linear TC.
199	`tc2psirb=0 /K`²	`psirb` quadratic TC.
200	`tc1psirt=0 /K`	`psirt` linear TC.
201	`tc2psirt=0 /K`²	`psirt` quadratic TC.
202	`tc1=0 /K`	Resistance linear TC.
203	`tc2=0 /K`²	Resistance quadratic TC.
204	`tc1o=0 /K`	`tc1` geometry independent part.
205	`tc2o=0 /K`²	`tc2` geometry independent part.
206	`tc1w=0 m/K`	`tc1 1/w` coefficient.
207	`tc2w=0 m/K`²	`tc2 1/w` coefficient.
208	`tc1l=0 m/K`	`tc1 1/l` coefficient.
209	`tc2l=0 m/K`²	`tc2 1/l` coefficient.
210	`tc1lw=0 m`²`/K`	`tc1 1/(l*w)` coefficient.
211	`tc2lw=0 m`²`/K`²	`tc2 1/(l*w)` coefficient.
212	`tsl=0 /K`	Slope of resistance change compared to temperature at low temperature.
213	`tsh=0 /K`	Slope of resistance change compared to temperature at high temperature.
214	`tsct=100 degC`	Critical temperature where resistance change slope goes from tsl to tsh.
215	`tssm=10 degC`	Resistance change slope smoothing parameter.
216	`tslo=0 /K`	`tsl` geometry independent part.
217	`tsho=0 /K`	`tsh` geometry independent part.
218	`tscto=100 degC`	`tsct` geometry independent part.
219	`tssmo=10 degC`	`tssm` geometry independent part.
220	`tslw=0 m/K`	`tsl 1/w` coefficient.
221	`tshw=0 m/K`	`tsh 1/w` coefficient.
222	`tsctw=0 m degC`	`tsct 1/w` coefficient.
223	`tssmw=0 m degC`	`tssm 1/w` coefficient.
224	`tsll=0 m/K`	`tsl 1/l` coefficient.
225	`tshl=0 m/K`	`tsh 1/l` coefficient.
226	`tsctl=0 m degC`	`tsct 1/l` coefficient.
227	`tssml=0 m degC`	`tssm 1/l` coefficient.
228	`tsllw=0 m`²`/K`	`tsl 1/(l*w)` coefficient.
229	`tshlw=0 m`²`/K`	`tsh 1/(l*w)` coefficient.
230	`tsctlw=0 m`² `degC`	`tsct 1/(l*w)` coefficient.
231	`tssmlw=0 m`² `degC`	`tssm 1/(l*w)` coefficient.
232	`tc1rc=0 /K`	Contact resistance linear TC.
233	`tc2rc=0 /K`²	Contact resistance quadratic TC.
234	`xbeta=0`	Exponent for impact ionization current exponent temperature dependence.
235	`tegth=0`	Thermal conductance temperature exponent.
236	`xvsat=0`	Exponent for saturation velocity temperature dependence.
237	`xvsato=0`	`xvsat` geometry independent part.
238	`xvsatl=0`	`xvsat 1/l` coefficient.
239	`xvsatle=1`	`xvsat 1/l` exponent.
240	`ea=1.12 V`	Activation voltage for diode temperature dependence.
241	`xis=3`	Exponent for diode temperature dependence.
242	`tc1vbvb=0 /K`	Breakdown voltage linear TC (bottom gate).
243	`tc2vbvb=0 /K`²	Breakdown voltage quadratic TC (bottom gate).
244	`tc1nbvb=0 /K`	Breakdown ideality factor linear TC (bottom gate).
245	`tc1vbvt=0 /K`	Breakdown voltage linear TC (top gate).
246	`tc2vbvt=0 /K`²	Breakdown voltage quadratic TC (top gate).
247	`tc1nbvt=0 /K`	Breakdown ideality factor linear TC (top gate).
248	`tc1kfn=0 /K`	Flicker noise coefficient linear TC.
249	`nsig_rsh=0`	Number of standard deviations of global variation for `rsh`.
250	`nsig_w=0`	Number of standard deviations of global variation for `w`.
251	`nsig_l=0`	Number of standard deviations of global variation for `l`.
252	`sig_rsh=0 %`	Global variation standard deviation for `rsh` (relative).
253	`sig_w=0 m`	Global variation standard deviation for `w` (absolute).
254	`sig_l=0 m`	Global variation standard deviation for `l` (absolute).
255	`smm_rsh=0 %m`	Local variation standard deviation for `rsh` (relative).
256	`smm_w=0 m^1.5`	Local variation standard deviation for `w` (absolute).
257	`smm_l=0 m^1.5`	Local variation standard deviation for `l` (absolute).
258	`swmmgdep=0`	Switch for mismatch geometry calculation: 0=drawn and 1=effective.
259	`swnoise=1`	Switch to include noise: 0=no and 1=yes.
260	`swet=1`	Switch to include self-heating: 0=no and 1=yes.
261	`swlin=0`	Switch to force linearity: 0=no and 1=yes.
262	`swmman=0`	Switch to enable mismatch analysis: 0=no and 1=yes.
263	`tref (degC)`	Alias of tnom.
264	`tr (degC)`	Alias of tnom.
265	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`
		Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating Point Parameters

1	`jtype`	JFET type: +1=n-body and -1=p-body.
2	`leff_m (m`	Effective electrical length.
3	`weff_m (m)`	Effective electrical width.
4	`rth (K/W)`	Thermal resistance at ambient temperature.
5	`cth_i (s W/K)`	Thermal capacitance.
6	`v (V)`	Voltage across JFET.
7	`ids (A)`	Current through JFET body.
8	`r_dc (`Ω`)`	DC resistance (including bias and temperature dependence).
9	`r_ac (`Ω`)`	AC resistance (including bias and temperature dependence).
10	`cgbs (F)`	Bottom-gate to source capacitance.
11	`cgbd (F)`	Bottom-gate to drain capacitance.
12	`cgts (F)`	Top-gate to source capacitance.
13	`cgtd (F)`	Top-gate to drain capacitance.
14	`vsp (V)`	Source voltage difference w.r.t. to pinch-off.
15	`vdsat (V)`	Drain-source saturation voltage.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.

Cgbd OP-11	diblt M-87	nspolw M-113	tc1psirb M-198
Cgbs OP-10	dibltl M-88	nspoo M-108	tc1psirt M-200
Cgtd OP-13	diblv M-90	nspow M-111	tc1rc M-232
Cgts OP-12	dta I-19	nspowe M-112	tc1vbvb M-242
Ids OP-7	dtemp I-20	nt M-41	tc1vbvt M-245
Vdsat OP-15	du M-143	nwxw M-29	tc1w M-206
Vsp OP-14	dxlsat M-35	pab M-161	tc2 M-203
adb I-11	ea M-240	paramchk M-2	tc2l M-209
adt I-12	ecorn M-142	pat M-179	tc2lw M-211
afn M-195	ecrit M-140	pdb I-13	tc2o M-205
ajab M-163	fc M-156	pdb2 I-14	tc2psirb M-199
ajat M-181	fdrwo M-31	pdt I-15	tc2psirt M-201
ajpb M-171	fdxwo M-32	pdt2 I-16	tc2rc M-233
ajpt M-189	gmin M-8	ppb M-169	tc2vbvb M-243
alphab M-114	grpo M-27	ppt M-187	tc2vbvt M-246
alphabl M-116	gth M-146	psb I-6	tc2w M-207
alphabo M-115	gtha M-149	psb2 I-7	tegth M-235
alphat M-117	gthc M-150	psirb M-52	tempeff O-1
alphatl M-119	gtho M-147	psirbfac M-59	tm M-36
alphato M-118	gthp M-148	psirbl M-54	tmax M-7
asb I-4	ibv M-193	psirble M-55	tmaxclip M-26
ast I-5	imax M-9	psirblw M-58	tmin M-6
ats M-101	isab M-157	psirbo M-53	tminclip M-25
atsl M-103	isat M-175	psirbw M-56	tnom M-18
atso M-102	ispb M-164	psirbwe M-57	toxb M-39
axs M-104	ispt M-182	psirt M-68	toxt M-42
axsl M-106	jmax M-23	psirtfac M-75	tr M-264
axso M-105	jtype OP-1	psirtl M-70	tref M-263
beta M-120	kfn M-194	psirtle M-71	trise I-18
bfn M-196	l I-2	psirtlw M-74	tsct M-214
cab M-159	leff_m OP-2	psirto M-69	tsctl M-226
cat M-177	level M-1	psirtw M-72	tsctlw M-230
cd I-17	lmax M-20	psirtwe M-73	tscto M-218
cjab M-160	lmin M-19	pst I-8	tsctw M-222
cjat M-178	m I-29	pst2 I-9	tsh M-213
cjpb M-168	mab M-162	r0 M-77	tshl M-225
cjpt M-186	mat M-180	r_ac OP-9	tshlw M-229
clm1 M-92	meff O-2	r_dc OP-8	tsho M-217
clm1c M-95	moffspo M-145	rc M-83	tshw M-221
clm1l M-93	mpb M-170	rcd M-82	tsl M-212
clm1le M-94	mpt M-188	rcs M-81	tsll M-224
clm2 M-96	mu0 M-76	rcw M-84	tsllw M-228
clm2e M-100	mult I-24	revision M-5	tslo M-216
clm2l M-97	mumb M-121	rsh0 M-78	tslw M-220
clm2le M-98	mumbe M-124	rshzd M-80	tssm M-215
clm2v M-99	mumbl M-126	rth OP-4	tssml M-227
compatible M-265	mumblw M-128	rthresh M-12	tssmlw M-231
cpb M-166	mumbo M-125	rzd M-79	tssmo M-219
cpb2 M-167	mumboff M-122	scale M-10	tssmw M-223
cpt M-184	mumbs M-123	shrink M-11	ttb M-172
cpt2 M-185	mumbw M-127	sig_l M-254	ttt M-190
cs I-10	mumii1 M-137	sig_rsh M-252	type M-13
cth M-151	mumii2 M-138	sig_w M-253	v OP-6
cth_i OP-5	mumt M-129	smm_l M-257	vbvb M-173
ctha M-154	mumte M-132	smm_rsh M-255	vbvt M-191
cthc M-155	mumtl M-134	smm_w M-256	vcorn M-141
ctho M-152	mumtlw M-136	subversion M-4	vcrit M-139
cthp M-153	mumto M-133	swbgmos M-14	version M-3
dfb M-44	mumtoff M-130	swet I-26	vfbb M-40
dfbfac M-51	mumts M-131	swet M-260	vfbt M-43
dfbl M-46	mumtw M-135	swfngeo M-197	vmax M-24
dfble M-47	nab M-158	swgdep M-17	voffspo M-144
dfblw M-50	nat M-176	swgeo M-16	w I-1
dfbo M-45	nb M-38	swlin I-27	wd I-3
dfbw M-48	nbvb M-174	swlin M-261	weff_m OP-3
dfbwe M-49	nbvt M-192	swmman I-28	wexw M-30
dft M-60	nc M-37	swmman M-262	wmax M-22
dftfac M-67	npb M-165	swmmgdep M-258	wmin M-21
dftl M-62	npt M-183	swnoise I-25	xbeta M-234
dftle M-63	nsig_l M-251	swnoise M-259	xis M-241
dftlw M-66	nsig_rsh M-249	swtgmos M-15	xl M-33
dfto M-61	nsig_w M-250	tc1 M-202	xlw M-34
dftw M-64	nsmm_l I-23	tc1kfn M-248	xvsat M-236
dftwe M-65	nsmm_rsh I-21	tc1l M-208	xvsatl M-238
diblb M-85	nsmm_w I-22	tc1lw M-210	xvsatle M-239
diblbl M-86	nspo M-107	tc1nbvb M-244	xvsato M-237
dible M-91	nspol M-109	tc1nbvt M-247	xw M-28
diblle M-89	nspole M-110	tc1o M-204

Long Channel JFET/MOSFET Model (mos30)

This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.95) as MOS model, level 30 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.

Note: In noise analysis, mos30 instances will not generate any contribution, since there are no noise sources included in the mos30 model.

Warning: Dont use this model. It is obsolete.

Mos30 will be removed from spectre in the next release.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

mn30 (1 2 0 0) nchmod area=2 mult=1

Sample Model Statement

model nchmod mos30 type=n tox=1.1e-5 ron=150 rsat=500 psat=2 vsat=1 vsub=0.59 cgate=1.65e-12 csub=1.1e-9 tref=25

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`area=1`	Alias of mult.
3	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, or `subth`.
4	`m=1`	Multiplicity factor.

Model Definition

model modelName mos30 parameter=value ...

Model Parameters

1	`type=n`	Transistor gender. Possible values are `n` or `p`.
2	`ron=1.0` Ω	Ohmic resistance at zero bias.
3	`rsat=1.0` Ω	Space charge resistance at zero bias.
4	`vsat=10.0 V`	Critical drain-source voltage for hot carriers.
5	`psat=1.0`	Velocity saturation coefficient.
6	`vp=-1.0 V`	Pinch off voltage at zero gate and substrate voltages.
7	`tox=-1.0 cm`	Gate oxide thickness.
8	`dch=1.0e15 cm`^-3	Doping level channel.
9	`dsub=1.0e15 cm`^-3	Doping level substrate.
10	`vsub=0.6 V`	Substrate diffusion voltage.
11	`vgap=1.2 V`	Bandgap voltage channel.
12	`cgate=0.0 F`	Gate capacitance at zero bias.
13	`csub=0.0 F`	Substrate capacitance at zero bias.
14	`tausc=0.0 s`	Space charge transit time of the channel.
15	`ach=0.0`	Temperature coefficient resistivity of the channel.
16	`kf=0.0`	Flickernoise coefficient.
17	`af=1.0`	Flickernoise exponent.
18	`tr (C)`	Reference temperature. Default set by option `tnom`.
19	`tref (C)`	Alias of tr. Default set by option `tnom`.
20	`tnom (C)`	Alias of tr. Default set by option `tnom`.
21	`dta=0.0 K`	Temperature offset of the device.
22	`trise=0.0 K`	Alias of `dta`.

Output Parameters

1	`ront (`Ω`)`	Ohmic resistance at zero bias.
2	`rsat (`Ω`)`	Space charge resistance at zero bias.
3	`vsatt (V)`	Critical drain-source voltage for hot carriers.
4	`vsubt (V)`	Substrate diffusion voltage.
5	`cgate (F)`	Gate capacitance at zero bias.
6	`csubt (F)`	Substrate capacitance at zero bias.

Operating-Point Parameters

1	`pwr (W)`	Power.
2	`ids (A)`	Total current including velocity saturation.
3	`qb (Coul)`	Substrate charge.
4	`qg (Coul)`	Gate charge.
5	`qds (Coul)`	Space charge in the channel.
6	`gdsd (S)`	Conductance (d ids / d vd).
7	`gdsg (S)`	Conductance (d ids / d vg).
8	`gdss (S)`	Conductance (d ids / d vs).
9	`gdsb (S)`	Conductance (d ids / d vb).
10	`cbd (F)`	Capacitance (d qb / d vd).
11	`cbg (F)`	Capacitance (d qb / d vg).
12	`cbs (F)`	Capacitance (d qb / d vs).
13	`cbb (F)`	Capacitance (d qb / d vb).
14	`cgd (F)`	Capacitance (d qg / d vd).
15	`cgg (F)`	Capacitance (d qg / d vg).
16	`cgs (F)`	Capacitance (d qg / d vs).
17	`cgb (F)`	Capacitance (d qg / d vb).
18	`cdsd (F)`	Capacitance (d qds / d vd).
19	`cdsg (F)`	Capacitance (d qds / d vg).
20	`cdss (F)`	Capacitance (d qds / d vs).
21	`cdsb (F)`	Capacitance (d qds / d vb).

Parameter Index


ach M-15	cgd OP-14	m I-4	tox M-7
af M-17	cgg OP-15	mult I-1	tr M-18
area I-2	cgs OP-16	psat M-5	tref M-19
cbb OP-13	csub M-13	pwr OP-1	trise M-22
cbd OP-10	csubt O-6	qb OP-3	type M-1
cbg OP-11	dch M-8	qds OP-5	vgap M-11
cbs OP-12	dsub M-9	qg OP-4	vp M-6
cdsb OP-21	dta M-21	region I-3	vsat M-4
cdsd OP-18	gdsb OP-9	ron M-2	vsatt O-3
cdsg OP-19	gdsd OP-6	ront O-1	vsub M-10
cdss OP-20	gdsg OP-7	rsat M-3	vsubt O-4
cgate M-12	gdss OP-8	rsat O-2
cgate O-5	ids OP-2	tausc M-14
cgb OP-17	kf M-16	tnom M-20

MOS Model 40, Level 40 (mos40t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.

Model Definition

model modelName mos40t parameter=value ...

Model Parameters

1	`level=40`	Level of this model.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`vbdblow=0 V`	Low limit of drain-bulk voltage
6	`vbdbhigh=0 V`	High limit of drain-bulk voltage.
7	`vbsblow=0 V`	Low limit of source-bulk voltage.
8	`vbsbhigh=0 V`	High limit of source-bulk voltage.
9	`vballmsg=1`	All ovcheck messages if set to 1.
10	`tmin=0 s`	Ovcheck tmin value.
11	`tdelay=0 s`	Stop simulation on overvoltage when STOP==1.
12	`stop=0`	Ohmic resistance at zero bias.
13	`ron=1` Ω	Ohmic resistance at zero bias.
14	`rsat=1` Ω	Space charge resistance at zero bias.
15	`vsat=10 V`	Critical drain-source voltage for hot carriers.
16	`psat=1`	Velocity saturation coefficient.
17	`vp=-1 V`	Pinch off voltage at zero gate and substrate voltages.
18	`tox=-1 m`	Gate oxide thickness.
19	`dch=1e+21 m`^-3	Doping level channel.
20	`tbox=-1 m`^-3	Box oxide thickness.
21	`cgate=0 F`	Gate capacitance at zero bias.
22	`cbox=0 F`	Wafer capacitance.
23	`tausc=0 s`	Space charge transit time of the channel.
24	`ach=0`	Temperature coefficient resistivity of the channel.
25	`achmod=0`	Parameter to switch to extended temperature scaling.
26	`achron=0`	Temperature coefficient of ohmic resistance at zero bias.
27	`achvsat=0`	Temperature coefficient of critical drain-source voltage for hot carriers.
28	`achrsat=0`	Temperature coefficient of space charge resistance at zero bias.
29	`tref=25 C`	Reference temperature.
30	`dta=0 K`	Temperature offset of the device.
31	`rth=300 K/W`	Thermal resistance.
32	`cth=3e-09 J/K`	Thermal capacitance.
33	`ath=0`	Temperature coefficient of the thermal resistance.
34	`type=n`	Transistor gender. Possible values are `n` and `p`.
35	`tnom (C)`	Alias of tnom.
36	`tr (C)`	Alias of tnom.
37	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ids (A)`	Drain source current.
2	`vds (V)`	Drain source voltage.
3	`vgs (V)`	Gate source voltage.
4	`vbs (V)`	Bulk source voltage.
5	`vp (V)`	Channel pinch-off voltage.
6	`gm (A/V)`	Transconductance.
7	`gmb (A/V)`	Bulk transconductance.
8	`gds (A/V)`	Output conductance.
9	`qg (C)`	Gate charge.
10	`cgd (F)`	Gate charge dependence on drain voltage.
11	`cgg (F)`	Gate charge dependence on gate voltage.
12	`cgs (F)`	Gate charge dependence on substrate voltage.
13	`cgb (F)`	Gate charge dependence on bulk voltage.
14	`qb (C)`	Bulk charge.
15	`cbd (F)`	Bulk charge dependence on drain voltage.
16	`cbg (F)`	Bulk charge dependence on gate voltage.
17	`cbs (F)`	Bulk charge dependence on substrate voltage.
18	`cbb (F)`	Bulk charge dependence on bulk voltage.
19	`qd (C)`	Drain charge.
20	`cdd (F)`	Drain charge dependence on drain voltage (dQd/dVd).
21	`cdg (F)`	Drain charge dependence on gate voltage (-dQd/dVg).
22	`cds (F)`	Drain charge dependence on source voltage (-dQd/dVs).
23	`cdb (F)`	Drain charge dependence on bulk voltage (-dQd/dVb).
24	`qs (C)`	Source charge.
25	`csd (F)`	Source charge dependence on drain voltage (-dQs/dVd).
26	`csg (F)`	Source charge dependence on gate voltage (-dQs/dVg).
27	`css (F)`	Source charge dependence on source voltage (dQs/dVs).
28	`csb (F)`	Source charge dependence on bulk voltage (-dQs/dVb).
29	`u`	Transistor gain.
30	`rout (`Ω`)`	Small-signal output resistance.
31	`vearly (V)`	Equivelant early voltage.
32	`iohm (A)`	Drain source current excluding velocity saturation.
33	`ihc (A)`	Critical current for velocity saturation.
34	`Pdiss (W)`	Dissipation.
35	`TK (K)`	Actual temperature.
36	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
37	`pwr (W)`	Power.
38	`mos_region`	MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.

Parameter Index

Pdiss OP-34	cgs OP-12	paramchk M-2	tr M-36
TK OP-35	compatible M-37	printscaled I-2	tref M-29
ach M-24	csb OP-28	psat M-16	trise I-3
achmod M-25	csd OP-25	pwr OP-37	type M-34
achron M-26	csg OP-26	qb OP-14	u OP-29
achrsat M-28	css OP-27	qd OP-19	vballmsg M-9
achvsat M-27	cth M-32	qg OP-9	vbdbhigh M-6
ath M-33	ctype OP-36	qs OP-24	vbdblow M-5
cbb OP-18	dch M-19	region I-4	vbds M-4
cbd OP-15	dta M-30	ron M-13	vbox M-3
cbg OP-16	gds OP-8	rout OP-30	vbs OP-4
cbox M-22	gm OP-6	rsat M-14	vbsbhigh M-8
cbs OP-17	gmb OP-7	rth M-31	vbsblow M-7
cdb OP-23	ids OP-1	stop M-12	vds OP-2
cdd OP-20	ihc OP-33	tausc M-23	vearly OP-31
cdg OP-21	iohm OP-32	tbox M-20	vgs OP-3
cds OP-22	level M-1	tdelay M-11	vp M-17
cgate M-21	m I-5	tempeff O-1	vp OP-5
cgb OP-13	meff O-2	tmin M-10	vsat M-15
cgd OP-10	mos_region OP-38	tnom M-35
cgg OP-11	mult I-1	tox M-18

Long Channel JFET/MOSFET Model (mos3002)

This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.98) as MOS model, level 3002 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.

Note: In noise analysis, mos3002 instances will not generate any contribution, since there are no noise sources included in the mos3002 model.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

mn3 (1 2 0 0) nch3002 area=1 m=2

Sample Model Statement

model nch3002 mos3002 ron=20 rsat=150 vsat=1 tox=1.23e-5 dch=1.1e16 vsub=0.58 csub=5.43e-13 tausc=1.2e-12 kf=1 tref=27 psat=1 dta=0

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`area=1`	Alias of mult.
3	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, or `subth`.
4	`m=1`	Multiplicity factor.

Model Definition

model modelName mos3002 parameter=value ...

Model Parameters

1	`type=n`	Transistor gender. Possible values are `n` or `p`.
2	`ron=1.0` Ω	Ohmic resistance at zero bias.
3	`rsat=1.0` Ω	Space charge resistance at zero bias.
4	`vsat=10.0 V`	Critical drain-source voltage for hot carriers.
5	`psat=1.0`	Velocity saturation coefficient.
6	`vp=-1.0 V`	Pinch off voltage at zero gate and substrate voltages.
7	`tox=-1.0 cm`	Gate oxide thickness.
8	`dch=1.0e15 cm`^-3	Doping level channel.
9	`dsub=1.0e15 cm`^-3	Doping level substrate.
10	`vsub=0.6 V`	Substrate diffusion voltage.
11	`vgap=1.2 V`	Band gap voltage channel.
12	`cgate=0.0 F`	Gate capacitance at zero bias.
13	`csub=0.0 F`	Substrate capacitance at zero bias.
14	`tausc=0.0 s`	Space charge transit time of the channel.
15	`ach=0.0`	Temperature coefficient resistivity of the channel.
16	`kf=0.0`	Flickernoise coefficient.
17	`af=1.0`	Flickernoise exponent.
18	`tr (C)`	Reference temperature. Default set by option `tnom`.
19	`tref (C)`	Alias of tr. Default set by option `tnom`.
20	`tnom (C)`	Alias of tr. Default set by option `tnom`.
21	`dta=0.0 K`	Temperature offset of the device.
22	`trise=0.0 K`	Alias of `dta`.

Output Parameters

1	`ront (`Ω`)`	Ohmic resistance at zero bias.
2	`rsat (`Ω`)`	Space charge resistance at zero bias.
3	`vsatt (V)`	Critical drain-source voltage for hot carriers.
4	`vsubt (V)`	Substrate diffusion voltage.
5	`cgate (F)`	Gate capacitance at zero bias.
6	`csubt (F)`	Substrate capacitance at zero bias.

Operating-Point Parameters

1	`pwr (W)`	Power.
2	`ids (A)`	Total current including velocity saturation.
3	`qb (Coul)`	Substrate charge.
4	`qg (Coul)`	Gate charge.
5	`qds (Coul)`	Space charge in the channel.
6	`gdsd (S)`	Conductance (d ids / d vd).
7	`gdsg (S)`	Conductance (d ids / d vg).
8	`gdss (S)`	Conductance (d ids / d vs).
9	`gdsb (S)`	Conductance (d ids / d vb).
10	`cbd (F)`	Capacitance (d qb / d vd).
11	`cbg (F)`	Capacitance (d qb / d vg).
12	`cbs (F)`	Capacitance (d qb / d vs).
13	`cbb (F)`	Capacitance (d qb / d vb).
14	`cgd (F)`	Capacitance (d qg / d vd).
15	`cgg (F)`	Capacitance (d qg / d vg).
16	`cgs (F)`	Capacitance (d qg / d vs).
17	`cgb (F)`	Capacitance (d qg / d vb).
18	`cdsd (F)`	Capacitance (d qds / d vd).
19	`cdsg (F)`	Capacitance (d qds / d vg).
20	`cdss (F)`	Capacitance (d qds / d vs).
21	`cdsb (F)`	Capacitance (d qds / d vb).

Parameter Index


ach M-15	cgd OP-14	m I-4	tox M-7
af M-17	cgg OP-15	mult I-1	tr M-18
area I-2	cgs OP-16	psat M-5	tref M-19
cbb OP-13	csub M-13	pwr OP-1	trise M-22
cbd OP-10	csubt O-6	qb OP-3	type M-1
cbg OP-11	dch M-8	qds OP-5	vgap M-11
cbs OP-12	dsub M-9	qg OP-4	vp M-6
cdsb OP-21	dta M-21	region I-3	vsat M-4
cdsd OP-18	gdsb OP-9	ron M-2	vsatt O-3
cdsg OP-19	gdsd OP-6	ront O-1	vsub M-10
cdss OP-20	gdsg OP-7	rsat M-3	vsubt O-4
cgate M-12	gdss OP-8	rsat O-2
cgate O-5	ids OP-2	tausc M-14
cgb OP-17	kf M-16	tnom M-20

Compact MOS-Transistor Model (mos705)

The mos705 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Dec.93) as MOS model, level 705.

In extension to the model book description a minimum conductance gmin is inserted between the drain and source node, to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

mn1 (1 2 0 0) mna7 ln=120e-6 wn=12e-6

Sample Model Statement:

model mna7 mos705 type=n vtn=0.853 betan=77e-6 tox=15e-9 vfb=-850e-3 tref=25 subthn=3 phi=0.645 lap=100e-9 gkn=-350e-9 th1n=0.15 th2n=0.046 th3n=0.1 fnoise=1e-10

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`wn=1.0 scale m`	Drawn channel width in the lay-out of the actual transistor. Scale set by option scale.
2	`ln=1.0 scale m`	Drawn channel length in the lay-out of the actual transistor. Scale set by option scale.
3	`w=1.0 scale m`	Alias for `wn`.
4	`l=1.0 scale m`	Alias for `ln`.
5	`mult=1`	Number of devices in parallel.
6	`area=1`	Alias of `mult`.
7	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, or `subth`.
8	`m=1`	Multiplicity factor.
`9`	`trise=0 K`	Temperature rise from ambient.

Model Definition

model modelName mos705 parameter=value ...

Model Parameters

1	`type=n`	Transistor gender. Possible values are `n` or `p`.
2	`vtn=0 V`	Threshold voltage of the reference transistor at the reference temperature.
3	`kon=0` √`V`	`Ko` of the reference transistor.
4	`kn=100m` √`V`	`K` of the reference transistor.
5	`vsbxn=0 V`	`Vsbx` of the reference transistor.
6	`delvx=0 V`	`Dvsbx` of the reference transistor.
7	`th1n=0 1/V`	`The1` of the reference transistor.
8	`th2n=0 1/`√`V`	`The2` of the reference transistor.
9	`th3n=0 1/V`	`The3` of the reference transistor at the reference temperature.
10	`gamman=0`	`Gam` of the reference transistor.
11	`shiftn=0 V^(1-n)`	`Sh` of the reference transistor.
12	`nn=0`	`N` of the reference transistor.
13	`pn=0 1/V`	`P` of the reference transistor.
14	`ava=0`	`A` of the reference transistor.
15	`avb=1 V`	`B` of the reference transistor.
16	`avc=0`	`C` of the reference transistor.
17	`wref=100u m`	Effective width of the reference transistor.
18	`wtol=0 m`	Difference between drawn and effective gate width.
19	`dvtn=0 V m`	Narrow-width factor of the threshold voltage at `vsbref`.
20	`dkon=0` √`v m`	Narrow-width factor of `ko`.
21	`dkn=0` √`v m`	Narrow-width factor of `k`.
22	`dvsbxn=0 V m`	Narrow-width factor of `vsbx`.
23	`ddelvx=0 Vm`	Narrow-width factor of `dvsbx`.
24	`betan=20u A/V`²	Gain factor of a infinite-square transistor at the reference temperature.
25	`dth1n=0 m/V`	Narrow-width factor of `the1`.
26	`dth2n=0 m/`√`V`	Narrow-width factor of `the2`.
27	`dth3n=0 m/V`	Narrow-width factor of `the3`.
28	`dgamn=0 m`	Narrow-width factor of `gam`.
29	`dava=0 m`	Narrow-width factor of `a`.
30	`davb=0 V m`	Narrow-width factor of `b`.
31	`davc=0 m`	Narrow-width factor of `c`.
32	`lref=100u m`	Effective length of the reference transistor.
33	`ltol=0 m`	Difference between drawn and actual gate polysilicon length.
34	`gvtn=0 V m`	Short-channel factor of the threshold voltage at `vsbref`.
35	`gkon=0` √`V m`	Short-channel factor of `ko`.
36	`gkn=0` √`V m`	Short-channel factor of `k`.
37	`gvsbxn=0 V m`	Short-channel factor of `vsbx`.
38	`gdelvx=0 V m`	Short-channel factor of `dvsbx`.
39	`gth1n=0 m/V`	Short-channel factor of `the1`.
40	`gth2n=0 m/`√`V`	Short-channel factor of `the2`.
41	`gth3n=0 m/V`	Short-channel factor of `the3`.
42	`ggamn=0 m`	Short-channel factor of `gam`.
43	`gshift=0 V^(1-n) m`²
		Short-channel factor of `sh`.
44	`gnn=0 m`	Short-channel factor of `n`.
45	`gpn=0 m/V`	Short-channel factor of `p`.
46	`gava=0 m`	Short-channel factor of `a`.
47	`gavb=0 V m`	Short-channel factor of `b`.
48	`gavc=0 m`	Short-channel factor of `c`.
49	`lap=0 m`	Half of the effective channel-length reduction due to lateral diffusion.
50	`vsbref=0 V`	Source to bulk reference voltage for parameter determination.
51	`phi=600m V`	Diffusion potential at the reference temperature.
52	`tcvt=-1m V/K`	Temperature coefficient of `vto`.
53	`tbetan=1.5`	Power temperature coefficient of `bet`.
54	`tth3n=0 1/(V K)`	Temperature coefficient of `the3`.
55	`tgth3n=0 m/(V K)`	Temperature coefficient of the length dependence of `the3`.
56	`m=1.0`	Subthreshold-slope factor at reference back bias and at the reference temperature.
57	`subthn=0`	Weak-inversion factor.
58	`vtr=0 V`	Depletion-MOS-transistor-transition voltage.
59	`ratio=0`	Depletion-MOS-transistor-gain ratio.
60	`vfb=0 V`	Flat-band voltage.
61	`tox=100n m`	Gate-oxide thickness.
62	`col=0 F/m`	Gate/drain or gate/source overlap capacitance per unit length.
63	`fnoise=0 m`² `V`²	Flicker-noise factor.
64	`tnoise=0`	Thermal-noise factor.

Temperature parameters

65	`tr (C)`	Reference temperature. Default set by option `tnom`.
66	`tref (C)`	Alias of `tr`. Default set by option `tnom`.
67	`tnom (C)`	Alias of `tr`. Default set by option `tnom`.
68	`dta=0 K`	Deviation between the temperature of the transistor and the temperature of the circuit.
69	`trise=0 K`	Alias of `dta`.

Output Parameters

1	`weff (V)`	Effective channel width of the actual transistor.
2	`leff (V)`	Effective channel length of the actual transistor.
3	`twophif (V)`	Diffusion potential.
4	`bet (A/V`²`)`	Gain factor of the transistor.
5	`k (`√`V )`	Body-effect factor.
6	`ko (`√`V )`	Initial body-effect factor for dual `k` approach.
7	`vsbx (V)`	Transition voltage for dual `k` approach.
8	`dvsbx (V)`	Transition-voltage range for dual `K` approach.
9	`vto (V)`	Threshold voltage.
10	`von (V)`	Onset voltage of the superthreshold region.
11	`the1 (1/V)`	Gate-bias-controlled transverse-field mobility reduction factor.
12	`the2 (1/`√`V )`	Back-bias-controlled transverse-field mobility reduction factor.
13	`the3 (1/V)`	Lateral-field mobility reduction factor (velocity saturation).
14	`gam`	Static-drain-feedback factor.
15	`sh (V^(1-n))`	Threshold-voltage-shift factor.
16	`n`	Threshold-voltage-shift exponent.
17	`p (1/V)`	Back-bias-shift factor.
18	`me (`√`V )`	Auxiliary parameter for subthreshold-slope factor.
19	`a`	Weak-avalanche multiplier.
20	`b (V)`	Weak-avalanche exponent factor.
21	`c`	Saturation-voltage reduction factor.
22	`cox (F)`	Gate capacitance.
23	`cgso (F)`	Gate/source-overlap capacitance.
24	`cgdo (F)`	Gate/drain-overlap capacitance.
25	`vtre (V)`	Depletion MOS transistor transition voltage.
26	`ratio`	Depletion MOS transistor gain ratio.
27	`vfbe (V)`	Flat band voltage.
28	`vtemp (V)`	kT/q at actual device temperature.
29	`gnoise (V`²`)`	Coefficient of the flicker noise for the actual transistor.
30	`unoise (J)`	Coefficient of the thermal noise for the actual transistor.

Operating-Point Parameters

1	`ide (A)`	Drain current.
2	`ige (A)`	Gate current.
3	`ise (A)`	Source current.
4	`ibe (A)`	Bulk current.
5	`vds (V)`	Drain-source voltage.
6	`vgs (V)`	Gate-source voltage.
7	`vsb (V)`	Source-bulk voltage.
8	`ids (A)`	Drain-source current.
9	`idb (A)`	Drain-bulk current.
10	`isb (A)`	Source-bulk current.
11	`pwr (W)`	Power.
12	`vts (V)`	Vto including back-bias effects.
13	`vgt (V)`	Effective gate drive including back-bias and drain effects.
14	`vdss (V)`	Saturation voltage at actual bias.
15	`gm (S)`	Transconductance (d ids / d vgs).
16	`gmb (S)`	Bulk transconductance (d ids / d vbs).
17	`gds (S)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`u`	Transistor gain (gm/gds).
35	`rout (`Ω`)`	Small signal output resistance (1/gds).
36	`vearly (V)`	Equivalent Early voltage (\|Id\|/gds).
37	`keff (`√`V )`	Describes body effect at actual bias.
38	`beff (S/V)`	Effective beta at actual bias in the simple MOS model.
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picox)).
40	`sqrtsfw (V/`√`Hz )`
		Input-referred RMS white noise voltage (sqrt(sth)/gm).
41	`sqrtsff (V/`√`Hz )`
		Input-referred RMS 1/f noise voltage at 1kHz (sqrt(gnoise/1000)).
42	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.

Parameter Index

a O-19	dta M-68	k O-5	the3 O-13
area I-6	dth1n M-25	keff OP-37	tnoise M-64
ava M-14	dth2n M-26	kn M-4	tnom M-67
avb M-15	dth3n M-27	ko O-6	tox M-61
avc M-16	dvsbx O-8	kon M-3	tr M-65
b O-20	dvsbxn M-22	l I-4	tref M-66
beff OP-38	dvtn M-19	lap M-49	trise I-9
bet O-4	fknee OP-42	leff O-2	trise M-69
betan M-24	fnoise M-63	ln I-2	tth3n M-54
c O-21	fug OP-39	lref M-32	twophif O-3
cbb OP-33	gam O-14	ltol M-33	type M-1
cbd OP-30	gamman M-10	m I-8	u OP-34
cbg OP-31	gava M-46	m M-56	unoise O-30
cbs OP-32	gavb M-47	me O-18	vds OP-5
cdb OP-21	gavc M-48	mult I-5	vdss OP-14
cdd OP-18	gdelvx M-38	n O-16	vearly OP-36
cdg OP-19	gds OP-17	nn M-12	vfb M-60
cds OP-20	ggamn M-42	p O-17	vfbe O-27
cgb OP-25	gkn M-36	phi M-51	vgs OP-6
cgd OP-22	gkon M-35	pn M-13	vgt OP-13
cgdo O-24	gm OP-15	pwr OP-11	von O-10
cgg OP-23	gmb OP-16	ratio M-59	vsb OP-7
cgs OP-24	gnn M-44	ratio O-26	vsbref M-50
cgso O-23	gnoise O-29	region I-7	vsbx O-7
col M-62	gpn M-45	rout OP-35	vsbxn M-5
cox O-22	gshift M-43	sh O-15	vtemp O-28
csb OP-29	gth1n M-39	shiftn M-11	vtn M-2
csd OP-26	gth2n M-40	sqrtsff OP-41	vto O-9
csg OP-27	gth3n M-41	sqrtsfw OP-40	vtr M-58
css OP-28	gvsbxn M-37	subthn M-57	vtre O-25
dava M-29	gvtn M-34	tbetan M-53	vts OP-12
davb M-30	ibe OP-4	tcvt M-52	w I-3
davc M-31	idb OP-9	tgth3n M-55	weff O-1
ddelvx M-23	ide OP-1	th1n M-7	wn I-1
delvx M-6	ids OP-8	th2n M-8	wref M-17
dgamn M-28	ige OP-2	th3n M-9	wtol M-18
dkn M-21	isb OP-10	the1 O-11
dkon M-20	ise OP-3	the2 O-12

Compact MOS-Transistor Model (mos902)

The mos902 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Feb.98) as MOS model, level 902. Information on how to obtain this document can be found on Source Link by searching for Philips.

In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement:

mp1 (0 1 2 2) mos9pch w=10u l=2u area=1.5

Sample Model Statement:

model mos9pch mos902 ler=0.93e-6 wer=20e-6 tref=27 vtor=1.11 kr=0.54 phibr=0.66 vsbxr=100 the1r=0.19 slk=-0.215e-6 swk=98e-9 swthe3=7.8e-9

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`w=1.0 scale m`	Drawn channel width in the lay-out. Scale set by option scale.
2	`l=1.0 scale m`	Drawn channel length in the lay-out. Scale set by option scale.
3	`mult=1`	Number of devices in parallel.
4	`area=1`	Alias of `mult`.
5	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, or `subth`.
6	`m=1`	Multiplicity factor.
`7`	`trise=0 K`	Temperature rise from ambient.

Model Definition

model modelName mos902 parameter=value ...

Model Parameters

Device type parameters

type=n

Transistor gender. Possible values are n or p.

Geometry parameters

2	`ler=2.5e-6 m`	Effective channel length of the reference transistor.
3	`wer=25e-6 m`	Effective channel width of the reference transistor.
4	`lvar=0.3e-6 m`	Difference between the actual and the programmed poly-silicon gate length.
5	`lap=0.1e-6 m`	Effective channel length reduction per side.
6	`wvar=3e-6 m`	Difference between the actual and the programmed field-oxide opening.
7	`wot=1e-6 m`	Effective channel width reduction per side.
8	`wdog=0 m`	Characteristic drawn gate width, below which dogboning appears.

Threshold-voltage parameters

9	`vtor=0.8 V`	Threshold voltage at zero back-bias.
10	`stvto=0.01 V/K`	Coefficient of the temperature dependence of `vto`.
11	`slvto=0.5e-6 V m`	Coefficient of the length dependence of `vto`.
12	`sl2vto=0 V m`²	Second coefficient of the length dependence of `vto`.
13	`swvto=5e-6 V m`	Coefficient of the width dependence of `vto`.
14	`kor=0.5` √`V`	Low-backbias body factor.
15	`slko=1e-6` √`V m`	Coefficient of the length dependence of `ko.`
16	`swko=10e-6` √`V m`	Coefficient of the width dependence of `ko`.
17	`kr=0.1` √`V`	High-backbias body factor.
18	`slk=0.5e-6` √`V m`	Coefficient of the length dependence of `k`.
19	`swk=5e-6` √`V m`	Coefficient of the width dependence of `k`.
20	`phibr=0.65 V`	Surface potential at strong inversion.
21	`vsbxr=0.9 V`	Transition voltage for the dual-`k`-factor model.
22	`slvsbx=0.5e-6 V m`	Coefficient of the length dependence of `vsbx`.
23	`swvsbx=5e-6 V m`	Coefficient of the width dependence of `vsbx`.

Channel-current parameters

24	`betsq=0.1e-3 A/V`²	Gain factor for an infinite square transistor.
25	`etabet=0.5`	Exponent of the temperature dependence of the gain factor.
26	`the1r=0.05 1/V`	Coefficient of the mobility reduction due to the gate-induced field.
27	`stthe1r=3e-3 1/(V K)`	Coefficient of the temperature dependence of `the1`.
28	`slthe1r=50e-9 m/V`	Coefficient of the length dependence of `the1`.
29	`stlthe1=5e-9 m/(V K)`	Coefficient of the temperature dependence of `slthe1`.
30	`swthe1=1e-6 m/V`	Coefficient of the width dependence of `the1`.
31	`fthe1=0`	Coefficient describing the width dependence of `the1` for `w` < `wdog`.
32	`the2r=17e-3 1/`√`V`	Coefficient of the mobility reduction due to the back-bias.
33	`stthe2r=0.1e-3 1/(`√`V K)`	Coefficient of the temperature dependence of `the2`.
34	`slthe2r=5e-9 m/`√`V`	Coefficient of the length dependence of `the2`.
35	`stlthe2=0.5e-9 m/(`√`V K)`	Coefficient of the temperature dependence of `slthe2`.
36	`swthe2=0.1e-6 m/`√`V`	Coefficient of the width dependence of `the2`.
37	`the3r=37e-3 1/V`	Coefficient of the mobility reduction due to the lateral field.
38	`stthe3r=0.1e-3 1/(V K)`
		Coefficient of the temperature dependence of `the3`.
39	`slthe3r=5e-9 m/V`	Coefficient of the length dependence of `the3`.
40	`stlthe3=0.5e-9 m/(V K)`
		Coefficient of the temperature dependence of `slthe3`.
41	`swthe3=0.1e-6 m/V`	Coefficient of the width dependence of `the3`.

Drain-feedback parameters

42	`gam1r=40e-3 V^(1-etads)`
		Coefficient for the drain induced threshold shift for large gate drive.
43	`slgam1=0.1e-6 V^(1-etads) m`
		Coefficient of the length dependence of `gam1`.
44	`swgam1=1e-6 V^(1-etads) m`
		Coefficient of the width dependence of `gam1`.
45	`etadsr=0.6`	Exponent of the vds dependence of `gam1`.
46	`alpr=4e-3`	Factor of the channel-length modulation.
47	`etaalp=0.5`	Exponent of the length dependence of `alp`.
48	`slalp=0.14e-3 m^etaalp`
		Coefficient of the length dependence of `alp`.
49	`swalp=0.1e-6 m`	Coefficient of the width dependence of `alp`.
50	`vpr=0.25 V`	Characteristic voltage of the channel-length modulation.

Sub-threshold parameters

51	`gamoor=1.1e-3`	Coefficient for the drain induced threshold shift at zero gate drive.
52	`slgamoo=10e-15 m`²	Coefficient of the length dependence of `gamoo`.
53	`etagamr=2`	Exponent of the back-bias dependence of `gamo`.
54	`mor=0.3`	Factor for the subthreshold slope.
55	`stmo=0.01 1/K`	Coefficient of the temperature dependence of `mo`.
56	`slmo=1.4e-3` √`m`	Coefficient of the length dependence of `mo`.
57	`etamr=2`	Exponent of the back-bias dependence of m.
58	`zet1r=0.7`	Weak-inversion correction factor.
59	`etazet=0.5`	Exponent of the length dependence of `zet1`.
60	`slzet1=0.14e-6 m^etazet`
		Coefficient of the length dependence of `zet1`.
61	`vsbtr=99 V`	Limiting voltage of the vsb dependence of m and `gamo`.
62	`slvsbt=10e-6 V m`	Coefficient of the length dependence of `vsbt`.

Weak-avalanche parameters

63	`a1r=22`	Factor of the weak-avalanche current.
64	`sta1=0.1 1/K`	Coefficient of the temperature dependence of `a1`.
65	`sla1=10e-6 m`	Coefficient of the length dependence of `a1`.
66	`swa1=0.1e-3 m`	Coefficient of the width dependence of `a1`.
67	`a2r=33 V`	Exponent of the weak-avalanche current.
68	`sla2=10e-6 V m`	Coefficient of the length dependence of `a2`.
69	`swa2=0.1e-3 V m`	Coefficient of the width dependence of `a2`.
70	`a3r=0.6`	Factor of the drain-source voltage above which weak-avalanche occurs.
71	`sla3=1e-6 m`	Coefficient of the length dependence of `a3`.
72	`swa3=10e-6 m`	Coefficient of the width dependence of `a3`.

Charge parameters

73	`tox=20e-9 m`	Thickness of the oxide layer.
74	`col=50e-12 F/m`	Gate overlap capacitance per unit channel width.

Noise parameters

75	`ntr=21e-21 J`	Coefficient of the thermal noise.
76	`nfr=16e-12 V`²	Coefficient of the flicker noise.

Temperature parameters

77	`tr (C)`	Reference temperature. Default set by option `tnom`.
78	`tref (C)`	Alias of `tr`. Default set by option `tnom`.
79	`tnom (C)`	Alias of `tr`. Default set by option `tnom`.
80	`dta=0 K`	Temperature offset of the device.
81	`trise=0 K`	Alias of `dta`.

Output Parameters

1	`le (m)`	Effective channel length.
2	`we (m)`	Effective channel width.
3	`vto (V)`	Threshold voltage at zero back-bias.
4	`ko (`√`V )`	Low-backbias body factor.
5	`k (`√`V )`	High-backbias body factor.
6	`phib (V)`	Surface potential at strong inversion.
7	`vsbx (V)`	Transition voltage for the dual-`k`-factor model.
8	`bet (A/V`²`)`	Gain factor (* mult).
9	`the1 (1/V)`	Coefficient of the mobility reduction due to the gate-induced field.
10	`the2 (1/`√`V )`	Coefficient of the mobility reduction due to the back-bias.
11	`the3 (1/V)`	Coefficient of the mobility reduction due to the lateral field.
12	`gam1 (V^(1-etads))`	Coefficient for the drain induced threshold shift for large gate drive.
13	`etads`	Exponent of the vds dependence of `gam1`.
14	`alp`	Factor of the channel-length modulation.
15	`vp (V)`	Characteristic voltage of the channel-length modulation.
16	`gamoo`	Coefficient for the drain induced threshold shift at zero gate drive.
17	`etagam`	Exponent of the back-bias dependence of `gamo`.
18	`mo`	Factor for the subthreshold slope.
19	`etam`	Exponent of the back-bias dependence of `m`.
20	`phit (V)`	Thermal voltage.
21	`zet1`	Weak-inversion correction factor.
22	`vsbt (V)`	Limiting voltage of the vsb dependence of `m` and `gamo`.
23	`a1`	Factor of the weak-avalanche current.
24	`a2 (V)`	Exponent of the weak-avalanche current.
25	`a3`	Factor of the drain-source voltage above which weak-avalanche occurs.
26	`cox (F)`	Gate-to-channel capacitance (* mult).
27	`cgdo (F)`	Gate-drain overlap capacitance (* mult).
28	`cgso (F)`	Gate-source overlap capacitance (* mult).
29	`nt (J)`	Coefficient of the thermal noise.
30	`nf (V`²`)`	Coefficient of the flicker noise (/ mult).
31	`lv2 (m)`
32	`lv1 (m)`
33	`lv51 (m)`
34	`lv50 (V)`

Operating-Point Parameters

1	`ide (A)`	Resistive drain current.
2	`ige (A)`	Resistive gate current.
3	`ise (A)`	Resistive source current.
4	`ibe (A)`	Resistive bulk current.
5	`vds (V)`	Drain-source voltage.
6	`vgs (V)`	Gate-source voltage.
7	`vsb (V)`	Source-bulk voltage.
8	`ids (A)`	Resistive drain-source current.
9	`idb (A)`	Resistive drain-bulk current.
10	`isb (A)`	Resistive source-bulk current.
11	`iavl (A)`	Substrate current.
12	`pwr (W)`	Power.
13	`vt1 (V)`	`Vto` including backbias effects.
14	`vgt2 (V)`	Effective gate drive including backbias and drain effects.
15	`vdss1 (V)`	Saturation voltage at actual bias.
16	`vsat (V)`	Saturation limit.
17	`gm (S)`	Transconductance (d ids / d vgs).
18	`gmb (S)`	Bulk transconductance (d ids / d vbs).
19	`gds (S)`	Output conductance (d ids / d vds).
20	`cdd (F)`	Capacitance (d qd / d vd).
21	`cdg (F)`	Capacitance (- d qd / d vg).
22	`cds (F)`	Capacitance (- d qd / d vs).
23	`cdb (F)`	Capacitance (- d qd / d vb).
24	`cgd (F)`	Capacitance (- d qg / d vd).
25	`cgg (F)`	Capacitance (d qg / d vg).
26	`cgs (F)`	Capacitance (- d qg / d vs).
27	`cgb (F)`	Capacitance (- d qg / d vb).
28	`csd (F)`	Capacitance (- d qs / d vd).
29	`csg (F)`	Capacitance (- d qs / d vg).
30	`css (F)`	Capacitance (d qs / d vs).
31	`csb (F)`	Capacitance (- d qs / d vb).
32	`cbd (F)`	Capacitance (- d qb / d vd).
33	`cbg (F)`	Capacitance (- d qb / d vg).
34	`cbs (F)`	Capacitance (- d qb / d vs).
35	`cbb (F)`	Capacitance (d qb / d vb).
36	`u`	Transistor gain (gm/gds).
37	`rout (`Ω`)`	Small signal output resistance (1/gds).
38	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
39	`keff (`√`V )`	Describes body effect at actual bias.
40	`beff (S/V)`	Effective beta at actual bias in the simple MOS model (2*\|ids\|/vgt2^2).
41	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
42	`sqrtsfw (V/`√`Hz )`	Input-referred RMS white noise voltage (sqrt(sth)/gm).
43	`sqrtsff (V/`√`Hz )`	Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
44	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
45	`lv9 (V)`
46	`lv10 (V)`
47	`lv26 (V)`
48	`lx4 (A)`
49	`lx50 (A)`
50	`lx12 (Coul)`
51	`lx14 (Coul)`
52	`lx16 (Coul)`
53	`linearity_factor`
54	`I1 (A)`

Parameter Index

I1 OP-54	fthe1 M-31	nf O-30	swko M-16
a1 O-23	fug OP-41	nfr M-76	swthe1 M-30
a1r M-63	gam1 O-12	nt O-29	swthe2 M-36
a2 O-24	gam1r M-42	ntr M-75	swthe3 M-41
a2r M-67	gamoo O-16	phib O-6	swvsbx M-23
a3 O-25	gamoor M-51	phibr M-20	swvto M-13
a3r M-70	gds OP-19	phit O-20	the1 O-9
alp O-14	gm OP-17	pwr OP-12	the1r M-26
alpr M-46	gmb OP-18	region I-5	the2 O-10
area I-4	iavl OP-11	rout OP-37	the2r M-32
beff OP-40	ibe OP-4	sl2vto M-12	the3 O-11
bet O-8	idb OP-9	sla1 M-65	the3r M-37
betsq M-24	ide OP-1	sla2 M-68	tnom M-79
cbb OP-35	ids OP-8	sla3 M-71	tox M-73
cbd OP-32	ige OP-2	slalp M-48	tr M-77
cbg OP-33	isb OP-10	slgam1 M-43	tref M-78
cbs OP-34	ise OP-3	slgamoo M-52	trise I-7
cdb OP-23	k O-5	slk M-18	trise M-81
cdd OP-20	keff OP-39	slko M-15	type M-1
cdg OP-21	ko O-4	slmo M-56	u OP-36
cds OP-22	kor M-14	slthe1r M-28	vds OP-5
cgb OP-27	kr M-17	slthe2r M-34	vdss1 OP-15
cgd OP-24	l I-2	slthe3r M-39	vearly OP-38
cgdo O-27	lap M-5	slvsbt M-62	vgs OP-6
cgg OP-25	le O-1	slvsbx M-22	vgt2 OP-14
cgs OP-26	ler M-2	slvto M-11	vp O-15
cgso O-28	linearity_factor OP-53	slzet1 M-60	vpr M-50
col M-74	lv1 O-32	sqrtsff OP-43	vsat OP-16
cox O-26	lv10 OP-46	sqrtsfw OP-42	vsb OP-7
csb OP-31	lv2 O-31	sta1 M-64	vsbt O-22
csd OP-28	lv26 OP-47	stlthe1 M-29	vsbtr M-61
csg OP-29	lv50 O-34	stlthe2 M-35	vsbx O-7
css OP-30	lv51 O-33	stlthe3 M-40	vsbxr M-21
dta M-80	lv9 OP-45	stmo M-55	vt1 OP-13
etaalp M-47	lvar M-4	stthe1r M-27	vto O-3
etabet M-25	lx12 OP-50	stthe2r M-33	vtor M-9
etads O-13	lx14 OP-51	stthe3r M-38	w I-1
etadsr M-45	lx16 OP-52	stvto M-10	wdog M-8
etagam O-17	lx4 OP-48	swa1 M-66	we O-2
etagamr M-53	lx50 OP-49	swa2 M-69	wer M-3
etam O-19	m I-6	swa3 M-72	wot M-7
etamr M-57	mo O-18	swalp M-49	wvar M-6
etazet M-59	mor M-54	swgam1 M-44	zet1 O-21
fknee OP-44	mult I-3	swk M-19	zet1r M-58

Compact MOS-Transistor Model (mos903)

The mos903 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Jun.98) as MOS model, level 903. Information on how to obtain this document can be found on Source Link by searching for Philips.

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Sample Instance Statement

m_1 (1 2 0 0) mos9nch w=0.35e-6 l=0.35e-6

Sample Model Statement

model mos9nch mos903 ler=3.5e-7 wer=1e-5 lvar=0 lap=2.2e-8 wvar=0 wot=3e-8 vtor=0.76 the1r=0.67 stthe1r=-1.76e-3 etaalp=0 slalp=0 alpr=0.01

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=1.5e-06 m`	Drawn channel length in the lay-out. Scale set by option scale.
3	`w=2e-05 m`	Drawn channel width in the lay-out. Scale set by option scale.
4	`printscaled=0`	Print scaled parameter info if value not equal to zero.
5	`trise=0 K`	Difference between the local ambient and global ambient temperature.
6	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
7	`m=1`	alias of mult.

Model Definition

model modelName mos903 parameter=value ...

Model Parameters

1	`level=903`	MOS Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage
5	`vbdblow=0 V`	Low limit of drain-bulk voltage.
6	`vbdbhigh=0 V`	High limit of drain-bulk voltage
7	`vbsblow=0 V`	Low limit of source-bulk voltage.
8	`vbsbhigh=0 V`	High limit of source-bulk voltage.
9	`vballmsg=1`	All ovcheck messages if set to 1.
10	`tmin=0 s`	Ovcheck tmin value.
11	`tdelay=0 s`	Ovcheck tdelay value.
12	`stop=0`	Stop simulation on overvoltage when STOP==1.
13	`ler=1.1e-06(n)/1.25e-06(p) m`
		Effective channel length of the reference transistor.
14	`wer=2e-05 m`	Effective channel width of the reference transistor.
15	`lvar=-2.2e-07(n)/-4.6e-07(p) m`
		Difference between the actual and the programmed poly-silicon gate length.
16	`lap=1e-07(n)/2.5e-08(p) m`
		Effective channel length reduction per side.
17	`wvar=-2.5e-08(n)/-1.3e-07(p) m`
		Difference between the actual and the programmed field-oxide opening.
18	`wot=0 m`	Effective channel width reduction per side.
19	`tr=21 unitCELSIUS`	Reference temperature. Default set by option `tnom`.
20	`vtor=0.73(n)/1.1(p) V`
		Threshold voltage at zero back-bias.
21	`stvto=-0.0012(n)/-0.0017(p) V/K`
		Coefficient of the temperature dependence of `vto`.
22	`slvto=-1.35e-07(n)/3.5e-08(p) V m`
		Coefficient of the length dependence of `vto`.
23	`sl2vto=0 V m`²	Second coefficient of the length dependence of `vto`.
24	`sl3vto=0 V`	Third coefficient of the length dependence of `vto`.
25	`swvto=1.3e-07(n)/5e-08(p) V m`
		Coefficient of the width dependence of `vto`.
26	`kor=0.65(n)/0.47(p)` `V`
		Low-backbias body factor.
27	`slko=-1.3e-07(n)/-2e-07(p)` `V m`
		Coefficient of the length dependence of `ko`.
28	`sl2ko=0 V1/2m2`	Second coefficient of the length dependence of `ko`.
29	`swko=2e-09(n)/1.15e-07(p)` `V m`
		Coefficient of the width dependence of `ko`.
30	`kr=0.11(n)/0.47(p)` `V`
		High-backbias body factor.
31	`slk=-2.8e-07(n)/-2e-07(p)` `V m`
		Coefficient of the length dependence of `k`.
32	`sl2k=0 V1/2m2`	Second coefficient of the length dependence of `k`.
33	`swk=2.75e-07(n)/1.15e-07(p)` `V m`
		Coefficient of the width dependence of `k`.
34	`phibr=0.65 V`	Surface potential at strong inversion.
35	`vsbxr=0.66(n)/1e-12(p) V`
		Transition voltage for the dual-`k`-factor model.
36	`slvsbx=0 V m`	Coefficient of the length dependence of `vsbx`.
37	`swvsbx=-6.75e-07(n)/0(p) V m`
		Coefficient of the width dependence of `vsbx`.
38	`betsq=8.3e-05(n)/2.61e-05(p) A/V`²
		Gain factor for an infinite square transistor.
39	`etabet=1.6`	Exponent of the temperature dependence of the gain factor.
40	`lp1=1e-06 m`	Characteristic length of first profile.
41	`fbet1=0`	Relative mobility decrease due to first profile.
42	`lp2=1e-08 m`	Characteristic length of second profile.
43	`fbet2=0`	Relative mobility decrease due to second profile.
44	`the1r=0.19 1/V`	Coefficient of the mobility reduction due to the gate-induced field.
45	`stthe1r=0 1/(V K)`	Coefficient of the temperature dependence of `the1`.
46	`slthe1r=1.4e-07(n)/7e-08(p) m/V`
		Coefficient of the length dependence of `the1`.
47	`stlthe1=0 m/(V K)`	Coefficient of the temperature dependence of `slthe1`.
48	`gthe1=0`	Parameter that selects either the old (gthe1=0) or the new (gthe1=1) scaling rule of the1.
49	`swthe1=-5.8e-08(n)/-8e-08(p) m/V`
		Coefficient of the width dependence of `the1`.
50	`wdog=0 m`	Characteristic drawn gate width, below which dogboning appears.
51	`fthe1=0`	Coefficient describing the width dependence of `the1` for `w` < `wdog`.
52	`the2r=0.012(n)/0.165(p) 1/``V`
		Coefficient of the mobility reduction due to the back-bias.
53	`stthe2r=0 1/(``V K)`
		Coefficient of the temperature dependence of `the2`.
54	`slthe2r=-3.3e-08(n)/-7.5e-08(p) m/``V`
		Coefficient of the length dependence of `the2`.
55	`stlthe2=0 m/(``V K)`
		Coefficient of the temperature dependence of `slthe2`.
56	`swthe2=3e-08(n)/2e-08(p) m/``V`
		Coefficient of the width dependence of `the2`.
57	`the3r=0.145(n)/0.027(p) 1/V`
		Coefficient of the mobility reduction due to the lateral field.
58	`stthe3r=-0.00066(n)/0(p) 1/(V K)`
		Coefficient of the temperature dependence of `the3`.
59	`slthe3r=1.85e-07(n)/2.7e-08(p) m/V`
		Coefficient of the length dependence of `the3`.
60	`stlthe3=-6.2e-10(n)/0(p) m/(V K)`
		Coefficient of the temperature dependence of `slthe3`.
61	`swthe3=2e-08(n)/1.1e-08(p) m/V`
		Coefficient of the width dependence of `the3`.
62	`gam1r=0.145(n)/0.077(p) V^(1-etads)`
		Coefficient for the drain induced threshold shift for large gate drive.
63	`slgam1=1.6e-07(n)/1.05e-07(p) V^(1-etads) m`
		Coefficient of the length dependence of `gam1`.
64	`swgam1=-1e-08(n)/-1.1e-08(p) V^(1-etads) m`
		Coefficient of the width dependence of `gam1`.
65	`etadsr=0.6`	Exponent of the vds dependence of `gam1`.
66	`alpr=0.003(n)/0.044(p)`
		Factor of the channel-length modulation.
67	`etaalp=0.15(n)/0.17(p)`
		Exponent of the length dependence of `alp`.
68	`slalp=-0.00565(n)/0.009(p) m^etaalp`
		Coefficient of the length dependence of `alp`.
69	`swalp=1.67e-09(n)/1.8e-10(p) m`
		Coefficient of the width dependence of `alp`.
70	`vpr=0.34(n)/0.235(p) V`
		Characteristic voltage of the channel-length modulation.
71	`gamoor=0.018(n)/0.007(p)`
		Coefficient for the drain induced threshold shift at zero gate drive.
72	`slgamoo=2e-14(n)/1.1e-14(p) m`²
		Coefficient of the length dependence of `gamoo`.
73	`sl2gamoo=0`	Second coefficient of the length dependence of `gamoo`.
74	`etagamr=2(n)/1(p)`
		Exponent of the back-bias dependence of `gamo`.
75	`mor=0.5(n)/0.375(p)`
		Factor for the subthreshold slope.
76	`stmo=0 1/K`	Coefficient of the temperature dependence of `mo`.
77	`slmo=0.00028(n)/4.7e-05(p)` `m`
		Coefficient of the length dependence of `mo`.
78	`etamr=2(n)/1(p)`	Exponent of the back-bias dependence of m.
79	`zet1r=0.42(n)/1.3(p)`
		Weak-inversion correction factor.
80	`etazet=0.17(n)/0.03(p)`
		Exponent of the length dependence of `zet1`.
81	`slzet1=-0.39(n)/-2.8(p) m^etazet`
		Coefficient of the length dependence of `zet1`.
82	`vsbtr=2.1(n)/100(p) V`
		Limiting voltage of the vsb dependence of m and `gamo`.
83	`slvsbt=-4.4e-06(n)/0(p) V m`
		Coefficient of the length dependence of `vsbt`.
84	`a1r=6(n)/10(p)`	Factor of the weak-avalanche current.
85	`sta1=0 1/K`	Coefficient of the temperature dependence of `a1`.
86	`sla1=1.3e-06(n)/-1.5e-05(p) m`
		Coefficient of the length dependence of `a1`.
87	`swa1=3e-06(n)/3e-05(p) m`
		Coefficient of the width dependence of `a1`.
88	`a2r=38(n)/59(p) V`	Exponent of the weak-avalanche current.
89	`sla2=1e-06(n)/-8e-06(p) V m`
		Coefficient of the length dependence of `a2`.
90	`swa2=2e-06(n)/1.5e-05(p) V m`
		Coefficient of the width dependence of `a2`.
91	`a3r=0.65(n)/0.52(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
92	`sla3=-5.5e-07(n)/-4.5e-07(p) m`
		Coefficient of the length dependence of `a3`.
93	`swa3=0(n)/-1.4e-07(p) m`
		Coefficient of the width dependence of `a3`.
94	`tox=2.5e-08 m`	Thickness of the oxide layer.
95	`col=3.2e-10 F/m`	Gate overlap capacitance per unit channel width.
96	`ntr=2.44e-20(n)/2.11e-20(p) J`
		Coefficient of the thermal noise.
97	`nfmod=0`	Switch that selects either old or new flicker noise model.
98	`nfr=7e-11(n)/2.14e-11(p) V`²
		Flicker noise coefficient of the reference transistor (for nfmod=0).
99	`nfar=7.15e+22(n)/1.53e+22(p) 1/(V m`⁴`)`
		First coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
100	`nfbr=2.16e+07(n)/4.06e+06(p) 1/(V m`²`)`
		Second coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
101	`nfcr=0(n)/2.92e-10(p) 1/V`
		Third coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
102	`th3mod=1`	Flag for theta3 clipping.
103	`dta=0 K`	Temperature offset of the device.
104	`type=n`	Transistor gender. Possible values are `n` and `p`.
105	`tnom (unitCELSIUS)`	alias of tnom.
106	`tref (unitCELSIUS)`	alias of tnom.
107	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ids (A)`	Resistive drain-source current.
2	`iavl (A)`	Substrate current.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Threshold voltage at zero back-bias.
7	`vts (V)`	VT0 including backbias effects.
8	`vgt (V)`	Effective gate drive including backbias and drain effects.
9	`vdss (V)`	Saturation voltage at actual bias.
10	`vsat (V)`	Saturation limit.
11	`gm (S)`	Transconductance (d ids / d vgs).
12	`gmb (S)`	Bulk transconductance (d ids / d vbs).
13	`gds (S)`	Output conductance (d ids / d vds).
14	`cdd (F)`	Capacitance (d qd / d vd).
15	`cdg (F)`	Capacitance (- d qd / d vg).
16	`cds (F)`	Capacitance (- d qd / d vs).
17	`cdb (F)`	Capacitance (- d qd / d vb).
18	`cgd (F)`	Capacitance (- d qg / d vd).
19	`cgg (F)`	Capacitance (d qg / d vg).
20	`cgs (F)`	Capacitance (- d qg / d vs).
21	`cgb (F)`	Capacitance (- d qg / d vb).
22	`csd (F)`	Capacitance (- d qs / d vd).
23	`csg (F)`	Capacitance (- d qs / d vg).
24	`css (F)`	Capacitance (d qs / d vs).
25	`csb (F)`	Capacitance (- d qs / d vb).
26	`cbd (F)`	Capacitance (- d qb / d vd).
27	`cbg (F)`	Capacitance (- d qb / d vg).
28	`cbs (F)`	Capacitance (- d qb / d vs).
29	`cbb (F)`	Capacitance (d qb / d vb).
30	`cgdol (F)`	Drain overlap capacitance of the actual transistor.
31	`cgsol (F)`	Gate overlap capacitance of the actual transistor.
32	`weff (m)`	Effective channel width for geometrical models.
33	`leff (m)`	Effective channel length for geometrical models.
34	`u`	Transistor gain (gm/gds).
35	`rout (`Ω`)`	Small signal output resistance (1/gds).
36	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
37	`keff (``V )`	Describes body effect at actual bias.
38	`beff (S/V)`	Effective beta at actual bias in the simple MOS model (2*\|ids\|/vgt2^2).
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
40	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage (sqrt(sth)/gm).
41	`sqrtsff (V/``Hz )`
		Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
42	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
43	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
44	`von (V)`	Signed vts (<0 for PMOS, >0 for NMOS).
45	`table_ids (A)`	Channel current.
46	`table_isub (A)`	Substrate current.
47	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
48	`table_vdsat (V)`	Saturation voltage at actual bias.
49	`table_qg (Coul)`	Charge at g node.
50	`table_qd (Coul)`	Charge at d node.
51	`table_qb (Coul)`	Charge at b node.
52	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
513	`diode_region=ON`	DIODE region. Possible values are `off` and `on.`

Parameter Index

a1r M-84	gm OP-11	slk M-31	th3mod M-102
a2r M-88	gmb OP-12	slko M-27	the1r M-44
a3r M-91	gthe1 M-48	slmo M-77	the2r M-52
alpr M-66	iavl OP-2	slthe1r M-46	the3r M-57
beff OP-38	ids OP-1	slthe2r M-54	tmin M-10
betsq M-38	keff OP-37	slthe3r M-59	tnom M-105
cbb OP-29	kor M-26	slvsbt M-83	tox M-94
cbd OP-26	kr M-30	slvsbx M-36	tr M-19
cbg OP-27	l I-2	slvto M-22	tref M-106
cbs OP-28	lap M-16	slzet1 M-81	trise I-5
cdb OP-17	leff OP-33	sqrtsff OP-41	type M-104
cdd OP-14	ler M-13	sqrtsfw OP-40	u OP-34
cdg OP-15	level M-1	sta1 M-85	vballmsg M-9
cds OP-16	lp1 M-40	stlthe1 M-47	vbdbhigh M-6
cgb OP-21	lp2 M-42	stlthe2 M-55	vbdblow M-5
cgd OP-18	lvar M-15	stlthe3 M-60	vbds M-4
cgdol OP-30	m I-7	stmo M-76	vbox M-3
cgg OP-19	meff O-2	stop M-12	vbsbhigh M-8
cgs OP-20	mor M-75	stthe1r M-45	vbsblow M-7
cgsol OP-31	mos_region OP-52	stthe2r M-53	vds OP-3
col M-95	mult I-1	stthe3r M-58	vdss OP-9
compatible M-107	nfar M-99	stvto M-21	vearly OP-36
csb OP-25	nfbr M-100	swa1 M-87	vgs OP-4
csd OP-22	nfcr M-101	swa2 M-90	vgt OP-8
csg OP-23	nfmod M-97	swa3 M-93	von OP-44
css OP-24	nfr M-98	swalp M-69	vpr M-70
ctype OP-43	ntr M-96	swgam1 M-64	vsat OP-10
diode_region OP-53	paramchk M-2	swk M-33	vsb OP-5
dta M-103	phibr M-34	swko M-29	vsbtr M-82
etaalp M-67	printscaled I-4	swthe1 M-49	vsbxr M-35
etabet M-39	region I-6	swthe2 M-56	vto OP-6
etadsr M-65	rout OP-35	swthe3 M-61	vtor M-20
etagamr M-74	sl2gamoo M-73	swvsbx M-37	vts OP-7
etamr M-78	sl2k M-32	swvto M-25	w I-3
etazet M-80	sl2ko M-28	table_ids OP-45	wdog M-50
fbet1 M-41	sl2vto M-23	table_isub OP-46	weff OP-32
fbet2 M-43	sl3vto M-24	table_qb OP-51	wer M-14
fknee OP-42	sla1 M-86	table_qd OP-50	wot M-18
fthe1 M-51	sla2 M-89	table_qg OP-49	wvar M-17
fug OP-39	sla3 M-92	table_vdsat OP-48	zet1r M-79
gam1r M-62	slalp M-68	table_vth OP-47
gamoor M-71	slgam1 M-63	tdelay M-11
gds OP-13	slgamoo M-72	tempeff O-1

Compact MOS-Transistor Distortion Model (mos1000)

The mos10.00 model is an experimental model based on the thesis of Ronald van Langevelde: "A compact MOSFET Model for Distortion Analysis in Analog Circuit Design", Technische Universiteit Eindhoven, 1998.

Note: In noise analysis, mos10.00 instances will not generate any contribution, since there are no noise sources included (yet) in the mos10.00 model.

In extension to the description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

1	`w=1.0 scale m`	Drawn channel width in the layout. Scale set by option scale.
2	`l=1.0 scale m`	Drawn channel length in the layout. Scale set by option scale.
3	`mult=1`	Number of devices in parallel.
4	`area=1`	Alias of `mult`.
5	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
6	`m=1`	Multiplicity factor.
7	`trise=0 K`	Temperature rise from ambient.

Model Definition

model modelName mos1000 parameter=value ...

Model Parameters

Device type parameters

type=n

Transistor gender. Possible values are n and p.

Geometry parameters

2	`ler=1.0e-6 m`	Effective channel length of the reference transistor.
3	`wer=1e-6 m`	Effective channel width of the reference transistor.
4	`lvar=0.0 m`	Difference between the actual and the programmed poly-silicon gate length.
5	`lap=45.0e-9 m`	Effective channel length reduction per side.
6	`wvar=-5.0e-9 m`	Difference between the actual and the programmed field-oxide opening.
7	`wot=50.0e-9 m`	Effective channel width reduction per side.

Threshold-voltage parameters

8	`vfbr=-518.9e-03 V`	Flat-band voltage for reference transistor.
9	`stvfb=-1.2e-03 V/K`	Coefficient of temperature dependence of `vfb`.
10	`slvfb=24.0e-09 V m`	Coefficient of length dependence of `vfb`.
11	`sl2vfb=-1.1e-15 V m`²	Second coefficient of length dependence of `vfb`.
12	`swvfb=4.400e-09 V m`	Coefficient of the width dependency of `vfb`.
13	`kor=368.0e-03` `V`	Body effect coefficient for the reference transistor.
14	`slko=-8.240e-09` `V m`	Coefficient of the length dependence of `ko`.
15	`sl2ko=-2.260e-15` `V m`²	Second coefficient of the length dependence of `ko`.
16	`swko=5.86e-09` `V m`	Coefficient of the width dependence of `ko`.
17	`phibr=0.6 V`	Surface potential at strong inversion.

Channel-current parameters

18	`betsq=370.9e-06 A/V`²	Gain factor for an infinite square transistor.
19	`etabet=1.6`	Exponent of the temperature dependence of the gain factor.
20	`thesrr=16.10e-3 1/V`²	Mobility degradation parameter due to surface roughness scattering.
21	`stthesr=0.0 1/(V`² `K)`	Coefficient of the temperature dependence of `thesr`.
22	`swthesr=0.0 1/(V`² `m)`
		Coefficient of the width dependence of `thesr`.
23	`thephr=0.055 1/V`	Mobility degradation parameter due to phonon scattering.
24	`sttheph=0.0 1/(V K)`
		Coefficient of the temperature dependence of `theph`.
25	`swtheph=0.0 1/(V m)`
		Coefficient of the width dependence of `theph`.
26	`etamobr=1.6`	Effective field parameter for dependence on depletion charge.
27	`swetamob=0.0 1/m`	Coefficient of the width dependence of `etamobr`.
28	`thersq=0.155 1/V`	Coefficient of gate voltage independent part of series resistance.
29	`swther=0.0 1/(V m)`
		Coefficient of the width dependence of `ther`.
30	`ther1=0.0 V`	Numerator of gate voltage independent part of series resistance.
31	`ther2=1.0 V`	Denominator of gate voltage independent part of series resistance.
32	`thenr=0.480 1/V`	Velocity saturation parameter due to optical phonon scattering.
33	`stthen=0.0 1/(V K)`
		Coefficient of the temperature dependence of `then`.
34	`swthen=0.0 1/(V m)`
		Coefficient of the width dependence of `then`.
35	`thepr=0.0 1/V`	Velocity saturation parameter due to acoustic phonon scattering.
36	`stthep=0.0 1/(V K)`
		Coefficient of the temperature dependence of `thep`.
37	`swthep=0.0 1/(V m)`
		Coefficient of the width dependence of `thep`.
38	`gthep=1.0`	Velocity saturation factor due to acoustic phonon scattering.
39	`thethr=3.227e-3 1/V`³
		Coefficient of self-heating.
40	`sltheth=2.460e-9 1/(V`³ `m)`
		Coefficient of the length dependence of `theth`.
41	`swtheth=0.0 1/(V`³ `m)`
		Coefficient of the width dependence of `theth`.

Sub-threshold parameters

42	`sdiblo=2.030e-03 1/``V`
		Drain-induced barrier lowering parameter.
43	`sdiblexp=1.340`	Exponent of the length dependence of `sdibl`.
44	`dphi=0.800 V`	Parameter for short-channel subthreshold behavior.

Saturation parameters

45	`ssfsq=6.250e-03 1/``V`
		Static feedback parameter.
46	`swssf=0.0 1/(``V m)`
		Coefficient of the width dependence of `ssf`.
47	`alpsq=0.010 m`	Characteristic length parameter for channel length modulation.
48	`swalp=0.0 m`	Coefficient of the width dependence of `alp`.
49	`vp=0.075 V`	Characteristic voltage of channel-length modulation.

Smoothing parameters

50	`mexpo=0.093`	Smoothing factor.
51	`mexpl=0.065`	Coefficient of the length dependence of `mexp`.

Weak-avalanche parameters

52	`a1r=6`	Factor of the weak-avalanche current.
53	`sta1=0.0 1/K`	Coefficient of the temperature dependence of `a1`.
54	`sla1=1.30e-6 m`	Coefficient of the length dependence of `a1`.
55	`swa1=3.0e-06 m`	Coefficient of the width dependence of `a1`.
56	`a2r=38.0 V`	Exponent of the weak-avalanche current.
57	`sla2=1.00e-06 V m`	Coefficient of the length dependence of `a2`.
58	`swa2=2.00e-06 V m`	Coefficient of the width dependence of `a2`.
59	`a3r=0.650`	Factor of the drain-source voltage above which weak-avalanche occurs.
60	`sla3=-550.0e-06 m`	Coefficient of the length dependence of `a3`.
61	`swa3=0.0 m`	Coefficient of the width dependence of `a3`.

Charge parameters

62	`tox=4.5e-09 m`	Thickness of the oxide layer.
63	`col=320e-12 F/m`	Gate overlap capacitance per unit channel width.

Temperature parameters

64	`tr (C)`	Reference temperature. Default set by option `tnom`.
65	`tref (C)`	Alias of `tr`. Default set by option `tnom`.
66	`tnom (C)`	Alias of `tr`. Default set by option `tnom`.
67	`dta=0.0 K`	Temperature offset of the device. It served as the default value of instance trise.
68	`trise=0.0 K`	Alias of `dta`.

Output Parameters

1	`le (m)`	Effective channel length.
2	`we (m)`	Effective channel width.
3	`vfb (V)`	Flat-band voltage.
4	`ko (``V )`	Body effect coefficient.
5	`phib (V)`	Surface potential at strong inversion.
6	`bet (A/V`²`)`	Gain factor.
7	`thesr (1/V`²`)`	Mobility degradation parameter due to surface roughness scattering.
8	`theph (1/V)`	Mobility degradation parameter due to phonon scattering.
9	`etamob`	Effective field parameter for dependence on depletion charge.
10	`ther (1/V)`	Coefficient of gate voltage independent part of series resistance.
11	`ther1 (V)`	Numerator of gate voltage independent part of series resistance.
12	`ther2 (V)`	Denominator of gate voltage independent part of series resistance.
13	`then (1/V)`	Velocity saturation parameter due to optical phonon scattering.
14	`thep (1/V)`	Velocity saturation parameter due to acoustic phonon scattering.
15	`gthep`	Velocity saturation factor due to acoustic phonon scattering.
16	`theth (1/V`³`)`	Coefficient of self-heating.
17	`sdibl (1/``V )`	Drain-induced barrier lowering parameter.
18	`dphi (V)`	Parameter for short-channel subthreshold behavior.
19	`ssf (1/``V )`	Static feedback parameter.
20	`alp (m)`	Characteristic length parameter for channel length modulation.
21	`vp (V)`	Characteristic voltage of channel-length modulation.
22	`mexp`	Smoothing factor.
23	`phit (V)`	Thermal voltage.
24	`a1`	Factor of the weak-avalanche current.
25	`a2 (V)`	Exponent of the weak-avalanche current.
26	`a3`	Factor of the drain-source voltage above which weak-avalanche occurs.
27	`cox (F)`	Gate-to-channel capacitance (* mult).
28	`cgdo (F)`	Gate-drain overlap capacitance (* mult).
29	`cgso (F)`	Gate-source overlap capacitance (* mult).

Operating-Point Parameters

1	`ide (A)`	Resistive drain current.
2	`ige (A)`	Resistive gate current.
3	`ise (A)`	Resistive source current.
4	`ibe (A)`	Resistive bulk current.
5	`vds (V)`	Drain-source voltage.
6	`vgs (V)`	Gate-source voltage.
7	`vsb (V)`	Source-bulk voltage.
8	`ids (A)`	Resistive drain current.
9	`idb (A)`	Resistive drain-bulk current.
10	`isb (A)`	Resistive source-bulk current.
11	`iavl (A)`	Substrate current.
12	`pwr (W)`	Power.
13	`vto (V)`	Threshold voltage at zero back-bias.
14	`vts (V)`	`Vts`.
15	`vgt (V)`	Effective gate drive including backbias and drain effects.
16	`vdss (V)`	Saturation voltage at actual bias.
17	`vsat (V)`	Saturation limit.
18	`gm (S)`	Transconductance (d ids / d vgs).
19	`gmb (S)`	Bulk transconductance (d ids / d vbs).
20	`gds (S)`	Output conductance (d ids / d vds).
21	`cdd (F)`	Capacitance (d qd / d vd).
22	`cdg (F)`	Capacitance (- d qd / d vg).
23	`cds (F)`	Capacitance (- d qd / d vs).
24	`cdb (F)`	Capacitance (- d qd / d vb).
25	`cgd (F)`	Capacitance (- d qg / d vd).
26	`cgg (F)`	Capacitance (d qg / d vg).
27	`cgs (F)`	Capacitance (- d qg / d vs).
28	`cgb (F)`	Capacitance (- d qg / d vb).
29	`csd (F)`	Capacitance (- d qs / d vd).
30	`csg (F)`	Capacitance (- d qs / d vg).
31	`css (F)`	Capacitance (d qs / d vs).
32	`csb (F)`	Capacitance (- d qs / d vb).
33	`cbd (F)`	Capacitance (- d qb / d vd).
34	`cbg (F)`	Capacitance (- d qb / d vg).
35	`cbs (F)`	Capacitance (- d qb / d vs).
36	`cbb (F)`	Capacitance (d qb / d vb).
37	`u`	Transistor gain (gm/gds).
38	`rout (`Ω`)`	Small signal output resistance (1/gds).
39	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
40	`keff (``V )`	Describes body effect at actual bias.
41	`beff (S/V)`	Effective beta at actual bias in the simple MOS model (2*\|ids\|/vgt2^2).
42	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).

Parameter Index

a1 O-24	etamobr M-26	sl2ko M-15	ther1 M-30
a1r M-52	fug OP-42	sl2vfb M-11	ther1 O-11
a2 O-25	gds OP-20	sla1 M-54	ther2 M-31
a2r M-56	gm OP-18	sla2 M-57	ther2 O-12
a3 O-26	gmb OP-19	sla3 M-60	thersq M-28
a3r M-59	gthep M-38	slko M-14	thesr O-7
alp O-20	gthep O-15	sltheth M-40	thesrr M-20
alpsq M-47	iavl OP-11	slvfb M-10	theth O-16
area I-4	ibe OP-4	ssf O-19	thethr M-39
beff OP-41	idb OP-9	ssfsq M-45	tnom M-66
bet O-6	ide OP-1	sta1 M-53	tox M-62
betsq M-18	ids OP-8	stthen M-33	tr M-64
cbb OP-36	ige OP-2	stthep M-36	tref M-65
cbd OP-33	isb OP-10	sttheph M-24	trise I-7
cbg OP-34	ise OP-3	stthesr M-21	trise M-68
cbs OP-35	keff OP-40	stvfb M-9	type M-1
cdb OP-24	ko O-4	swa1 M-55	u OP-37
cdd OP-21	kor M-13	swa2 M-58	vds OP-5
cdg OP-22	l I-2	swa3 M-61	vdss OP-16
cds OP-23	lap M-5	swalp M-48	vearly OP-39
cgb OP-28	le O-1	swetamob M-27	vfb O-3
cgd OP-25	ler M-2	swko M-16	vfbr M-8
cgdo O-28	lvar M-4	swssf M-46	vgs OP-6
cgg OP-26	m I-6	swthen M-34	vgt OP-15
cgs OP-27	mexp O-22	swthep M-37	vp M-49
cgso O-29	mexpl M-51	swtheph M-25	vp O-21
col M-63	mexpo M-50	swther M-29	vsat OP-17
cox O-27	mult I-3	swthesr M-22	vsb OP-7
csb OP-32	phib O-5	swtheth M-41	vto OP-13
csd OP-29	phibr M-17	swvfb M-12	vts OP-14
csg OP-30	phit O-23	then O-13	w I-1
css OP-31	pwr OP-12	thenr M-32	we O-2
dphi M-44	region I-5	thep O-14	wer M-3
dphi O-18	rout OP-38	theph O-8	wot M-7
dta M-67	sdibl O-17	thephr M-23	wvar M-6
etabet M-19	sdiblexp M-43	thepr M-35
etamob O-9	sdiblo M-42	ther O-10

Compact MOS-Transistor Distortion Model (mos1100)

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`printscaled=0`	Print scaled parameter info if value not equal to zero.
5	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
6	`m=1`	alias of mult.
7	`mos_region=SUBTHRESHOLD`
8	`diode_region=ON`
9	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos1100 parameter=value ...

Model Parameters

1	`level=1.1e+03`	MOS Level.
2	`paramchk=0`	Level of clip warning info.
3	`ler=1e-06 m`	Effective channel length of the reference transistor.
4	`wer=1e-05 m`	Effective channel width of the reference transistor.
5	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
6	`lap=4e-08 m`	Effective channel length reduction per side.
7	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
8	`wot=0 m`	Effective channel width reduction per side.
9	`tr=21 C`	Reference temperature. Default set by option `tnom`.
10	`vfbr=-1.05 V`	Flat-band voltage for reference transistor.
11	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of `vfb`.
12	`kor=0.5` `V`	Body effect coefficient for the reference transistor.
13	`slko=0` `V m`	Coefficient of the length dependence of `ko`.
14	`sl2ko=0` `V m`²
		Second coefficient of the length dependence of `ko`.
15	`swko=0` `V m`	Coefficient of the width dependence of `ko`.
16	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
17	`phibr=0.95 V`	Surface potential at strong inversion.
18	`slphib=0 Vm`	Coefficient of the length dependence of phib.
19	`sl2phib=0 Vm`²	Second coefficient of the length dependence of phib.
20	`swphib=0 Vm`	Coefficient of the width dependence of phib.
21	`betsq=0.000371(n)/0.000115(p) A/V`²
		Gain factor for an infinite square transistor.
22	`etabet=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
23	`fbet1=0`	Relative mobility decrease due to first lateral profile.
24	`lp1=8e-07 m`	Characteristic length of first lateral profile.
25	`fbet2=0`	Relative mobility decrease due to second lateral profile.
26	`lp2=8e-07 m`	Characteristic length of second lateral profile.
27	`thesrr=0.4(n)/0.73(p) 1/V`
		Coefficient of the mobility reduction due to surface roughness scattering.
28	`swthesr=0 m`	Coefficient of the width dependence of thesr.
29	`thephr=0.0129(n)/0.001(p) 1/V`
		Coefficient of the mobility reduction due to phonon scattering.
30	`etaph=1.75`	Exponent of the temperature dependence of theph.
31	`swtheph=0 m`	Coefficient of the width dependence of theph.
32	`etamobr=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion/inversion charge.
33	`stetamob=0 1/K`	Coefficient of the temperature dependence of etamob.
34	`swetamob=0 m`	Coefficient of the width dependence of etamob.
35	`nur=1`	Exponent of the field dependence of the mobility model minus 1.
36	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter nu.
37	`therr=0.155(n)/0.08(p) 1/V`
		Coefficient of the series resistance.
38	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of ther.
39	`swther=0 m`	Coefficient of the width dependence of ther.
40	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
41	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
42	`thesatr=0.5(n)/0.2(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
43	`slthesat=1`	Coefficient of length dependence of thesat.
44	`thesatexp=1`	Exponent of length dependence of thesat.
45	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of thesat.
46	`swthesat=0 m`	Coefficient of the width dependence of thesat.
47	`thethr=0.001(n)/0.0005(p) 1/V`³
		Coefficient of self-heating.
48	`thethexp=1`	Exponent of the length dependence of theth.
49	`swtheth=0 m`	Coefficient of the width dependence of theth.
50	`sdiblo=0.002(n)/0.001(p) 1/``V`
		Drain-induced barrier lowering parameter.
51	`sdiblexp=1.35`	Exponent of the length dependence of sdibl.
52	`mor=0`	Parameter for short-channel subthreshold slope.
53	`moexp=1.34`	Exponent of the length dependence of mo.
54	`ssfr=0.00625 1/``V`
		Static feedback parameter.
55	`slssf=1e-06 m`	Coefficient of the length dependence of ssf.
56	`swssf=0 m`	Coefficient of the width dependence of ssf.
57	`alpr=0.01`	Factor of the channel length modulation.
58	`slalp=1`	Coefficient of the length dependence of alp.
59	`alpexp=1`	Exponent of the length dependence of alp.
60	`swalp=0 m`	Coefficient of the width dependence of `alp`.
61	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
62	`lmin=1.5e-07 m`	Minimum effective channel length in technology, used for calculation of smoothing factor m.
63	`a1r=6`	Factor of the weak-avalanche current.
64	`sta1=0 1/K`	Coefficient of the temperature dependence of a1.
65	`sla1=0 m`	Coefficient of the length dependence of a1.
66	`swa1=0 m`	Coefficient of the width dependence of a1.
67	`a2r=38 V`	Exponent of the weak-avalanche current.
68	`sla2=0 V m`	Coefficient of the length dependence of a2.
69	`swa2=0 V m`	Coefficient of the width dependence of a2.
70	`a3r=1`	Factor of the drain-source voltage above which weak-avalanche occurs.
71	`sla3=0 m`	Coefficient of the length dependence of a3.
72	`swa3=0 m`	Coefficient of the width dependence of `a3`.
73	`iginvr=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
74	`binv=48(n)/87.5(p) A/V`²
		Probability factor for intrinsic gate tunneling current in inversion.
75	`igaccr=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
76	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
77	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
78	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
79	`igovr=0 A/V`²	Gain factor for Source/Drain overlap gate tunneling current.
80	`tox=3.2e-09 m`	Thickness of gate oxide layer.
81	`col=3.2e-10 F/m`	Gate overlap capacitance per unit channel width.
82	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
83	`ntr=1.66e-20 J`	Coefficient of the thermal noise.
84	`nfar=1.57e+22(n)/3.83e+23(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
85	`nfbr=4.75e+08(n)/1.02e+08(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
86	`nfcr=0(n)/7.3e-09(p) 1/V`
		Third coefficient of the flicker noise.
87	`dta=0 K`	Temperature offset of the device.
88	`type=n`	Transistor gender. Possible values are `n` and `p`.
89	`imax=1000 A`	Explosion current.
90	`vbox=0.0 V`	Oxide breakdown voltage.
91	`vbds=0.0 V`	Drain-source breakdown voltage.
92	`tnom (C)`	alias of tnom.
93	`tref (C)`	alias of tnom.
94	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flat-band voltage for the actual transistor.
2	`ko (``V )`	Body-effect factor.
3	`kpinv (1/``V )`	Inverse of body-effect factor of the poly-silicon gate.
4	`phib (V)`	Surface potential at the onset of strong inversion.
5	`bet (A/V`²`)`	Gain factor.
6	`thesr (1/V)`	Mobility degradation parameter due to surface roughness scattering.
7	`theph (1/V)`	Mobility degradation parameter due to phonon scattering.
8	`etamob`	Effective field parameter for dependence on depletion charge.
9	`nu`	Exponent of field dependence of mobility model.
10	`ther (1/V)`	Coefficient of series resistance.
11	`ther1 (V)`	Numerator of gate voltage dependent part of series resistance.
12	`ther2 (V)`	Denominator of gate voltage dependent part of series resistance.
13	`thesat (1/V)`	Velocity saturation parameter due to optical/acoustic phonon scattering.
14	`theth (1/V`³`)`	Coefficient of self-heating.
15	`sdibl (1/``V )`	Drain-induced barrier lowering parameter.
16	`mo (V)`	Parameter for (short-channel) subthreshold slope.
17	`ssf (1/``V )`	Static-feedback parameter.
18	`alp`	Factor of channel length modulation.
19	`vp (V)`	Characteristic voltage of channel-length modulation.
20	`mexp`	Smoothing factor.
21	`phit (V)`	Thermal voltage at the actual temperature.
22	`a1`	Factor of the weak-avalanche current.
23	`a2 (V)`	Exponent of the weak-avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak-avalanche occurs.
25	`iginv (A/V`²`)`	Gain factor for intrinsic gate tunneling current in inversion.
26	`binv (A/V`²`)`	Probability factor for intrinsic gate tunneling current in inversion.
27	`igacc (A/V`²`)`	Gain factor for intrinsic gate tunneling current in accumulation.
28	`bacc (V)`	Probability factor for intrinsic gate tunneling current in accumulation.
29	`vfbov (V)`	Flat-band voltage for the Source/Drain overlap extensions.
30	`kov (``V )`	Body-effect factor for the Source/Drain overlap extensions.
31	`igov (A/V`²`)`	Gain factor for Source/Drain overlap tunneling current.
32	`cox (F)`	Oxide capacitance for the intrinsic channel (* mult).
33	`cgdo (F)`	Oxide capacitance for the gate-drain overlap (* mult).
34	`cgso (F)`	Oxide capacitance for the gate-source overlap (* mult).
35	`gatenoise`	Flag for in/exclusion of induced gate thermal noise.
36	`nt (J)`	Thermal noise coefficient.
37	`nfa (1/(Vm`⁴`))`	First coefficient of the flicker noise.
38	`nfb (1/(Vm`²`))`	Second coefficient of the flicker noise.
39	`nfc (1/V)`	Third coefficient of the flicker noise.
40	`tox (m)`	Thickness of gate oxide layer.
41	`int_s`
42	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`u`	Transistor gain (gm/gds).
39	`rout (`Ω`)`	Small-signal output resistance (1/gds).
40	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
41	`keff (``V )`	Body effect parameter.
42	`beff (A/V`²`)`	Gain factor.
43	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
44	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
45	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
46	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
47	`table_ids (A)`	Current.
48	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
49	`table_qg (Coul)`	Charge at g node.
50	`table_qd (Coul)`	Charge at d node.
51	`table_qb (Coul)`	Charge at b node.
52	`mos_region=SUBTHRESHOLD`
53	`diode_region=ON`

Parameter Index

a1 O-22	fug OP-43	nt O-36	table_vth OP-48
a1r M-63	gatenoise M-82	ntr M-83	theph O-7
a2 O-23	gatenoise O-35	nu O-9	thephr M-29
a2r M-67	gds OP-17	nuexp M-36	ther O-10
a3 O-24	gm OP-15	nur M-35	ther1 M-40
a3r M-70	gmb OP-16	paramchk M-2	ther1 O-11
alp O-18	iavl OP-2	phib O-4	ther2 M-41
alpexp M-59	ids OP-1	phibr M-17	ther2 O-12
alpr M-57	igacc O-27	phit O-21	therr M-37
bacc M-76	igaccr M-75	printscaled I-4	thesat O-13
bacc O-28	igb OP-5	region I-5	thesatexp M-44
beff OP-42	igd OP-4	rout OP-39	thesatr M-42
bet O-5	iginv O-25	sdibl O-15	thesr O-6
betsq M-21	iginvr M-73	sdiblexp M-51	thesrr M-27
binv M-74	igov O-31	sdiblo M-50	theth O-14
binv O-26	igovr M-79	simkitver M-94	thethexp M-48
cbb OP-33	igs OP-3	sl2ko M-14	thethr M-47
cbd OP-30	imax M-89	sl2phib M-19	tnom M-92
cbg OP-31	int_d O-42	sla1 M-65	tox M-80
cbs OP-32	int_s O-41	sla2 M-68	tox O-40
cdb OP-21	keff OP-41	sla3 M-71	tr M-9
cdd OP-18	ko O-2	slalp M-58	tref M-93
cdg OP-19	kor M-12	slko M-13	trise I-9
cds OP-20	kov M-78	slphib M-18	type M-88
cgb OP-25	kov O-30	slssf M-55	u OP-38
cgd OP-22	kpinv M-16	slthesat M-43	vbds M-91
cgdo O-33	kpinv O-3	sqrtsff OP-45	vbox M-90
cgdol OP-34	l I-2	sqrtsfw OP-44	vds OP-6
cgg OP-23	lap M-6	ssf O-17	vdss OP-13
cgs OP-24	leff OP-37	ssfr M-54	vearly OP-40
cgso O-34	ler M-3	sta1 M-64	vfb O-1
cgsol OP-35	level M-1	stetamob M-33	vfbov M-77
col M-81	lmin M-62	stvfb M-11	vfbov O-29
cox O-32	lp1 M-24	swa1 M-66	vfbr M-10
csb OP-29	lp2 M-26	swa2 M-69	vgs OP-7
csd OP-26	lvar M-5	swa3 M-72	vgt OP-12
csg OP-27	m I-6	swalp M-60	vp M-61
css OP-28	mexp O-20	swetamob M-34	vp O-19
diode_region I-8	mo O-16	swko M-15	vsat OP-14
diode_region OP-53	moexp M-53	swphib M-20	vsb OP-8
dta M-87	mor M-52	swssf M-56	vth OP-11
etabet M-22	mos_region I-7	swtheph M-31	vto OP-9
etamob O-8	mos_region OP-52	swther M-39	vts OP-10
etamobr M-32	mult I-1	swthesat M-46	w I-3
etaph M-30	nfa O-37	swthesr M-28	weff OP-36
etar M-38	nfar M-84	swtheth M-49	wer M-4
etasat M-45	nfb O-38	table_ids OP-47	wot M-8
fbet1 M-23	nfbr M-85	table_qb OP-51	wvar M-7
fbet2 M-25	nfc O-39	table_qd OP-50
fknee OP-46	nfcr M-86	table_qg OP-49

Compact MOS-Transistor Distortion Model (mos1100e)

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
4	`m=1`	Alias of mult.
5	`mos_region=SUBTHRESHOLD`
6	`diode_region=ON`
7	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos1100e parameter=value ...

Model Parameters

1	`level=1.1e+03`	MOS Level.
2	`paramchk=0`	Level of clip warning info.
3	`vfb=-1.05 V`	Flat-band voltage for the actual transistor.
4	`ko=0.5` `V`	Body-effect factor.
5	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
6	`phib=0.95 V`	Surface potential at the onset of strong inversion.
7	`bet=0.00192(n)/0.000381(p) A/V`²
		Gain factor.
8	`thesr=0.356(n)/0.73(p) 1/V`
		Mobility degradation parameter due to surface roughness scattering.
9	`theph=0.0129(n)/0.001(p) 1/V`
		Mobility degradation parameter due to phonon scattering.
10	`etamob=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion charge.
11	`nu=2`	Exponent of field dependence of mobility model.
12	`ther=0.0812(n)/0.079(p) 1/V`
		Coefficient of series resistance.
13	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
14	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
15	`thesat=0.251(n)/0.173(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
16	`theth=1e-05(n)/0(p) 1/V`³
		Coefficient of self-heating.
17	`sdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Drain-induced barrier lowering parameter.
18	`mo=0 V`	Parameter for (short-channel) subthreshold slope.
19	`ssf=0.012(n)/0.01(p) 1/``V`
		Static-feedback parameter.
20	`alp=0.025`	Factor of channel length modulation.
21	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
22	`mexp=5`	Smoothing factor.
23	`phit=0.0266 V`	Thermal voltage at the actual temperature.
24	`a1=6.02(n)/6.86(p)`
		Factor of the weak-avalanche current.
25	`a2=38(n)/57.3(p) V`
		Exponent of the weak-avalanche current.
26	`a3=0.641(n)/0.425(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
27	`iginv=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
28	`binv=48(n)/87.5(p) A/V`²
		Probability factor for intrinsic gate tunneling current in inversion.
29	`igacc=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
30	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
31	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
32	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
33	`igov=0 A/V`²	Gain factor for Source/Drain overlap tunneling current.
34	`cox=2.98e-14(n)/2.72e-14(p) F`
		Oxide capacitance for the intrinsic channel (* mult).
35	`cgdo=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-drain overlap (* mult).
36	`cgso=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-source overlap (* mult).
37	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
38	`nt=1.66e-20 J`	Thermal noise coefficient.
39	`nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
40	`nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
41	`nfc=0(n)/3.63e-10(p) 1/V`
		Third coefficient of the flicker noise.
42	`tox=3.2e-09 m`	Thickness of gate oxide layer.
43	`type=n`	Transistor gender. Possible values are `n` and `p`.
44	`imax=1000 A`	Explosion current.
45	`vbox=0.0 V`	Oxide breakdown voltage.
46	`vbds=0.0 V`	Drain-source breakdown voltage.
47	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flat-band voltage for the actual transistor.
2	`ko (``V )`	Body-effect factor.
3	`kpinv (1/``V )`	Inverse of body-effect factor of the poly-silicon gate.
4	`phib (V)`	Surface potential at the onset of strong inversion.
5	`bet (A/V`²`)`	Gain factor.
6	`thesr (1/V)`	Mobility degradation parameter due to surface roughness scattering.
7	`theph (1/V)`	Mobility degradation parameter due to phonon scattering.
8	`etamob`	Effective field parameter for dependence on depletion charge.
9	`nu`	Exponent of field dependence of mobility model.
10	`ther (1/V)`	Coefficient of series resistance.
11	`ther1 (V)`	Numerator of gate voltage dependent part of series resistance.
12	`ther2 (V)`	Denominator of gate voltage dependent part of series resistance.
13	`thesat (1/V)`	Velocity saturation parameter due to optical/acoustic phonon scattering.
14	`theth (1/V`³`)`	Coefficient of self-heating.
15	`sdibl (1/``V )`	Drain-induced barrier lowering parameter.
16	`mo (V)`	Parameter for (short-channel) subthreshold slope.
17	`ssf (1/``V )`	Static-feedback parameter.
18	`alp`	Factor of channel length modulation.
19	`vp (V)`	Characteristic voltage of channel-length modulation.
20	`mexp`	Smoothing factor.
21	`phit (V)`	Thermal voltage at the actual temperature.
22	`a1`	Factor of the weak-avalanche current.
23	`a2 (V)`	Exponent of the weak-avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak-avalanche occurs.
25	`iginv (A/V`²`)`	Gain factor for intrinsic gate tunneling current in inversion.
26	`binv (A/V`²`)`	Probability factor for intrinsic gate tunneling current in inversion.
27	`igacc (A/V`²`)`	Gain factor for intrinsic gate tunneling current in accumulation.
28	`bacc (V)`	Probability factor for intrinsic gate tunneling current in accumulation.
29	`vfbov (V)`	Flat-band voltage for the Source/Drain overlap extensions.
30	`kov (``V )`	Body-effect factor for the Source/Drain overlap extensions.
31	`igov (A/V`²`)`	Gain factor for Source/Drain overlap tunneling current.
32	`cox (F)`	Oxide capacitance for the intrinsic channel (* mult).
33	`cgdo (F)`	Oxide capacitance for the gate-drain overlap (* mult).
34	`cgso (F)`	Oxide capacitance for the gate-source overlap (* mult).
35	`gatenoise`	Flag for in/exclusion of induced gate thermal noise.
36	`nt (J)`	Thermal noise coefficient.
37	`nfa (1/(Vm`⁴`))`	First coefficient of the flicker noise.
38	`nfb (1/(Vm`²`))`	Second coefficient of the flicker noise.
39	`nfc (1/V)`	Third coefficient of the flicker noise.
40	`tox (m)`	Thickness of gate oxide layer.
41	`int_s`
42	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`u`	Transistor gain (gm/gds).
37	`rout (`Ω`)`	Small-signal output resistance (1/gds).
38	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
39	`keff (``V )`	Body effect parameter.
40	`beff (A/V`²`)`	Gain factor.
41	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
42	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
43	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
44	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
45	`table_ids (A)`	Current.
46	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
47	`table_qg (Coul)`	Charge at g node.
48	`table_qd (Coul)`	Charge at d node.
49	`table_qb (Coul)`	Charge at b node.
50	`mos_region=SUBTHRESHOLD`

51	`diode_region=ON`

Parameter Index

a1 M-24	csg OP-27	mexp O-20	theph O-7
a1 O-22	css OP-28	mo M-18	ther M-12
a2 M-25	diode_region I-6	mo O-16	ther O-10
a2 O-23	diode_region OP-51	mos_region I-5	ther1 M-13
a3 M-26	etamob M-10	mos_region OP-50	ther1 O-11
a3 O-24	etamob O-8	mult I-1	ther2 M-14
alp M-20	fknee OP-44	nfa M-39	ther2 O-12
alp O-18	fug OP-41	nfa O-37	thesat M-15
bacc M-30	gatenoise M-37	nfb M-40	thesat O-13
bacc O-28	gatenoise O-35	nfb O-38	thesr M-8
beff OP-40	gds OP-17	nfc M-41	thesr O-6
bet M-7	gm OP-15	nfc O-39	theth M-16
bet O-5	gmb OP-16	nt M-38	theth O-14
binv M-28	iavl OP-2	nt O-36	tox M-42
binv O-26	ids OP-1	nu M-11	tox O-40
cbb OP-33	igacc M-29	nu O-9	trise I-7
cbd OP-30	igacc O-27	paramchk M-2	type M-43
cbg OP-31	igb OP-5	phib M-6	u OP-36
cbs OP-32	igd OP-4	phib O-4	vbds M-46
cdb OP-21	iginv M-27	phit M-23	vbox M-45
cdd OP-18	iginv O-25	phit O-21	vds OP-6
cdg OP-19	igov M-33	printscaled I-2	vdss OP-13
cds OP-20	igov O-31	region I-3	vearly OP-38
cgb OP-25	igs OP-3	rout OP-37	vfb M-3
cgd OP-22	imax M-44	sdibl M-17	vfb O-1
cgdo M-35	int_d O-42	sdibl O-15	vfbov M-31
cgdo O-33	int_s O-41	simkitver M-47	vfbov O-29
cgdol OP-34	keff OP-39	sqrtsff OP-43	vgs OP-7
cgg OP-23	ko M-4	sqrtsfw OP-42	vgt OP-12
cgs OP-24	ko O-2	ssf M-19	vp M-21
cgso M-36	kov M-32	ssf O-17	vp O-19
cgso O-34	kov O-30	table_ids OP-45	vsat OP-14
cgsol OP-35	kpinv M-5	table_qb OP-49	vsb OP-8
cox M-34	kpinv O-3	table_qd OP-48	vth OP-11
cox O-32	level M-1	table_qg OP-47	vto OP-9
csb OP-29	m I-4	table_vth OP-46	vts OP-10
csd OP-26	mexp M-22	theph M-9

MOS Model 11, Level 1101 (mos11010)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11010 parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
12	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
13	`kor=0.5` `V`	Body effect coefficient for the reference transistor.
14	`slko=0`	Coefficient of the length dependence of KO.
15	`sl2ko=0`	Second coefficient of the length dependence of KO.
16	`sl3ko=0`	Third coefficient of the length dependence of KO.
17	`sl3koexp=1`	Exponent belonging to the third coefficient of the length dependence of KO.
18	`swko=0`	Coefficient of the width dependence of KO.
19	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
20	`phibr=0.95 V`	Surface potential at strong inversion.
21	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
22	`slphib=0`	Coefficient of the length dependence of PHIB.
23	`sl2phib=0`	Second coefficient of the length dependence of PHIB.
24	`swphib=0`	Coefficient of the width dependence of PHIB.
25	`betsq=0.000371(n)/0.000115(p) A/V`²
		Gain factor for an infinite square transistor.
26	`etabetr=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
27	`sletabet=0`	Coefficient of length dependence of ETABETR.
28	`fbet1=0`	Relative mobility decrease due to first lateral profile.
29	`lp1=8e-07 m`	Characteristic length of first lateral profile.
30	`fbet2=0`	Relative mobility decrease due to second lateral profile.
31	`lp2=8e-07 m`	Characteristic length of second lateral profile.
32	`thesrr=0.4(n)/0.73(p) 1/V`
		Coefficient of the mobility reduction due to surface roughness scattering.
33	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
34	`swthesr=0`	Coefficient of the width dependence of THESR.
35	`thephr=0.0129(n)/0.001(p) 1/V`
		Coefficient of the mobility reduction due to phonon scattering.
36	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
37	`swtheph=0`	Coefficient of the width dependence of THEPH.
38	`etamobr=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion/inversion charge.
39	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
40	`swetamob=0`	Coefficient of the width dependence of ETAMOB.
41	`nu=2`	Exponent of field dependence of mobility model.
42	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
43	`therr=0.155(n)/0.08(p) 1/V`
		Coefficient of the series resistance.
44	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
45	`swther=0`	Coefficient of the width dependence of THER.
46	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
47	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
48	`thesatr=0.5(n)/0.2(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
49	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
50	`slthesat=1`	Coefficient of length dependence of THESAT.
51	`thesatexp=1`	Exponent of length dependence of THESAT.
52	`swthesat=0`	Coefficient of the width dependence of THESAT.
53	`thethr=0.001(n)/0.0005(p) 1/V`³
		Coefficient of self-heating.
54	`thethexp=1`	Exponent of the length dependence of THETH.
55	`swtheth=0`	Coefficient of the width dependence of THETH.
56	`sdiblo=0.0001 1/``V`
		Drain-induced barrier lowering parameter.
57	`sdiblexp=1.35`	Exponent of the length dependence of SDIBL.
58	`moo=0`	Parameter for short-channel subthreshold slope.
59	`mor=0`	Parameter for short-channel subthreshold slope per unit length.
60	`moexp=1.34`	Exponent of the length dependence of MO.
61	`ssfr=0.00625 1/``V`
		Static feedback parameter.
62	`slssf=1`	Coefficient of the length dependence of SSF.
63	`swssf=0`	Coefficient of the width dependence of SSF.
64	`alpr=0.01`	Factor of the channel length modulation.
65	`slalp=1`	Coefficient of the length dependence of ALP.
66	`alpexp=1`	Exponent of the length dependence of ALP.
67	`swalp=0`	Coefficient of the width dependence of ALP.
68	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
69	`lmin=1.5e-07 m`	Minimum effective channel length in technology, used for calculation of smoothing factor m.
70	`a1r=6`	Factor of the weak-avalanche current.
71	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
72	`sla1=0`	Coefficient of the length dependence of A1.
73	`swa1=0`	Coefficient of the width dependence of A1.
74	`a2r=38 V`	Exponent of the weak-avalanche current.
75	`sla2=0`	Coefficient of the length dependence of A2.
76	`swa2=0`	Coefficient of the width dependence of A2.
77	`a3r=1`	Factor of the drain-source voltage above which weak-avalanche occurs.
78	`sla3=0`	Coefficient of the length dependence of A3.
79	`swa3=0`	Coefficient of the width dependence of A3.
80	`iginvr=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
81	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
82	`igaccr=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
83	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
84	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
85	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
86	`igovr=0 A/V`²	Gain factor for Source/Drain overlap gate tunneling current.
87	`agidlr=0 A/V`³	Gain factor for gate-induced leakage current.
88	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
89	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
90	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
91	`tox=3.2e-09 m`	Thickness of gate oxide layer.
92	`col=3.2e-16 F`	Gate overlap capacitance for a channel width of 1 um.
93	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
94	`nt=1.62e-20 J`	Thermal noise coefficient.
95	`nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise for a channel area of 1 um^2.
96	`nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise for a channel area of 1 um^2.
97	`nfcr=0(n)/7.3e-08(p) 1/V`
		Third coefficient of the flicker noise for a channel area of 1 um^2.
98	`dta=0 K`	Temperature offset of the device.
99	`rgo=0` Ω	Gate resistance.
100	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
101	`rvpoly=0` Ω `m`²	Vertical poly resistance.
102	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
103	`dlsil=0 m`	Silicide extension over the physical gate length.
104	`binning=0`	flag for eldo model.
105	`type=n`	Transistor gender. Possible values are `n` and `p`.
106	`imax=1000 A`	Explosion current.
107	`tnom (C)`	alias of tnom.
108	`tref (C)`	alias of tnom.
109	`simkitver=3.4`
110	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
49	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
50	`table_ids (A)`	Current.
51	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
52	`table_qg (Coul)`	Charge at g node.
53	`table_qd (Coul)`	Charge at d node.
54	`table_qb (Coul)`	Charge at b node.
55	`mos_region=SUBTHRESHOLD`

56	`diode_region=ON`

Parameter Index

a1r M-77	fug OP-44	rint M-107	tdelay M-11
a2r M-81	gatenoise M-100	rout OP-40	tempeff O-1
a3r M-84	gds OP-17	rshg M-109	thephr M-42
agidlr M-94	gm OP-15	rvpoly M-108	ther1 M-53
alpexp M-73	gmb OP-16	sdiblexp M-64	ther2 M-54
alpr M-71	iavl OP-2	sdiblo M-63	therr M-50
bacc M-90	ids OP-1	sl2ko M-22	thesatexp M-58
beff OP-43	igaccr M-89	sl2phib M-30	thesatr M-55
betsq M-32	igb OP-5	sl3ko M-23	thesrr M-39
bgidl M-95	igd OP-4	sl3koexp M-24	thethexp M-61
binning M-112	iginvr M-87	sla1 M-79	thethr M-60
binv M-88	igovr M-93	sla2 M-82	tmin M-10
cbb OP-33	igs OP-3	sla3 M-85	tnom M-114
cbd OP-30	keff OP-42	slalp M-72	tox M-98
cbg OP-31	kor M-20	sletabet M-34	tr M-17
cbs OP-32	kov M-92	slko M-21	tref M-115
cdb OP-21	kpinv M-26	slphib M-29	trise I-8
cdd OP-18	l I-2	slssf M-69	type M-113
cdg OP-19	lap M-14	slthesat M-57	u OP-39
cds OP-20	leff OP-37	sqrtsff OP-46	vballmsg M-9
cgb OP-25	level M-1	sqrtsfw OP-45	vbdbhigh M-6
cgd OP-22	lmin M-76	ssfr M-68	vbdblow M-5
cgdol OP-34	lp1 M-36	sta1 M-78	vbds M-4
cgg OP-23	lp2 M-38	stbgidl M-96	vbox M-3
cgidl M-97	lvar M-13	stetamob M-46	vbsbhigh M-8
cgs OP-24	m I-10	stop M-12	vbsblow M-7
cgsol OP-35	meff O-2	stphib M-28	vds OP-6
col M-99	moexp M-67	stvfb M-19	vdss OP-13
compatible M-116	moo M-65	swa1 M-80	vearly OP-41
csb OP-29	mor M-66	swa2 M-83	vfb M-18
csd OP-26	mos_region OP-55	swa3 M-86	vfbov M-91
csg OP-27	mult I-1	swalp M-74	vgs OP-7
css OP-28	nf I-4	swetamob M-47	vgt OP-12
ctype OP-48	nfar M-102	swko M-25	von OP-49
diode_region OP-56	nfbr M-103	swphib M-31	vp M-75
dlsil M-110	nfcr M-104	swssf M-70	vsat OP-14
dta M-105	ngcon I-5	swtheph M-44	vsb OP-8
etabetr M-33	nt M-101	swther M-52	vth OP-11
etamobr M-45	nu M-48	swthesat M-59	vto OP-9
etaph M-43	nuexp M-49	swthesr M-41	vts OP-10
etar M-51	paramchk M-2	swtheth M-62	w I-3
etasat M-56	phibr M-27	table_ids OP-50	weff OP-36
etasr M-40	printscaled I-7	table_qb OP-54	wot M-16
fbet1 M-35	region I-9	table_qd OP-53	wvar M-15
fbet2 M-37	rg OP-38	table_qg OP-52	xgw I-6
fknee OP-47	rgo M-106	table_vth OP-51	xpart M-111

MOS Model 11, Level 1101 (mos11010t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	alias of mult.
11	`mos_region=SUBTHRESHOLD`

12	`diode_region=ON`

Model Definition

model modelName mos11010t parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
12	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
13	`kor=0.5` `V`	Body effect coefficient for the reference transistor.
14	`slko=0`	Coefficient of the length dependence of KO.
15	`sl2ko=0`	Second coefficient of the length dependence of KO.
16	`sl3ko=0`	Third coefficient of the length dependence of KO.
17	`sl3koexp=1`	Exponent belonging to the third coefficient of the length dependence of KO.
18	`swko=0`	Coefficient of the width dependence of KO.
19	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
20	`phibr=0.95 V`	Surface potential at strong inversion.
21	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
22	`slphib=0`	Coefficient of the length dependence of PHIB.
23	`sl2phib=0`	Second coefficient of the length dependence of PHIB.
24	`swphib=0`	Coefficient of the width dependence of PHIB.
25	`betsq=0.000371(n)/0.000115(p) A/V`²
		Gain factor for an infinite square transistor.
26	`etabetr=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
27	`sletabet=0`	Coefficient of length dependence of ETABETR.
28	`fbet1=0`	Relative mobility decrease due to first lateral profile.
29	`lp1=8e-07 m`	Characteristic length of first lateral profile.
30	`fbet2=0`	Relative mobility decrease due to second lateral profile.
31	`lp2=8e-07 m`	Characteristic length of second lateral profile.
32	`thesrr=0.4(n)/0.73(p) 1/V`
		Coefficient of the mobility reduction due to surface roughness scattering.
33	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
34	`swthesr=0`	Coefficient of the width dependence of THESR.
35	`thephr=0.0129(n)/0.001(p) 1/V`
		Coefficient of the mobility reduction due to phonon scattering.
36	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
37	`swtheph=0`	Coefficient of the width dependence of THEPH.
38	`etamobr=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion/inversion charge.
39	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
40	`swetamob=0`	Coefficient of the width dependence of ETAMOB.
41	`nu=2`	Exponent of field dependence of mobility model.
42	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
43	`therr=0.155(n)/0.08(p) 1/V`
		Coefficient of the series resistance.
44	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
45	`swther=0`	Coefficient of the width dependence of THER.
46	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
47	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
48	`thesatr=0.5(n)/0.2(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
49	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
50	`slthesat=1`	Coefficient of length dependence of THESAT.
51	`thesatexp=1`	Exponent of length dependence of THESAT.
52	`swthesat=0`	Coefficient of the width dependence of THESAT.
53	`thethr=0.001(n)/0.0005(p) 1/V`³
		Coefficient of self-heating.
54	`thethexp=1`	Exponent of the length dependence of THETH.
55	`swtheth=0`	Coefficient of the width dependence of THETH.
56	`sdiblo=0.0001 1/``V`
		Drain-induced barrier lowering parameter.
57	`sdiblexp=1.35`	Exponent of the length dependence of SDIBL.
58	`moo=0`	Parameter for short-channel subthreshold slope.
59	`mor=0`	Parameter for short-channel subthreshold slope per unit length.
60	`moexp=1.34`	Exponent of the length dependence of MO.
61	`ssfr=0.00625 1/``V`
		Static feedback parameter.
62	`slssf=1`	Coefficient of the length dependence of SSF.
63	`swssf=0`	Coefficient of the width dependence of SSF.
64	`alpr=0.01`	Factor of the channel length modulation.
65	`slalp=1`	Coefficient of the length dependence of ALP.
66	`alpexp=1`	Exponent of the length dependence of ALP.
67	`swalp=0`	Coefficient of the width dependence of ALP.
68	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
69	`lmin=1.5e-07 m`	Minimum effective channel length in technology, used for calculation of smoothing factor m.
70	`a1r=6`	Factor of the weak-avalanche current.
71	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
72	`sla1=0`	Coefficient of the length dependence of A1.
73	`swa1=0`	Coefficient of the width dependence of A1.
74	`a2r=38 V`	Exponent of the weak-avalanche current.
75	`sla2=0`	Coefficient of the length dependence of A2.
76	`swa2=0`	Coefficient of the width dependence of A2.
77	`a3r=1`	Factor of the drain-source voltage above which weak-avalanche occurs.
78	`sla3=0`	Coefficient of the length dependence of A3.
79	`swa3=0`	Coefficient of the width dependence of A3.
80	`iginvr=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
81	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
82	`igaccr=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
83	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
84	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
85	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
86	`igovr=0 A/V`²	Gain factor for Source/Drain overlap gate tunneling current.
87	`agidlr=0 A/V`³	Gain factor for gate-induced leakage current.
88	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
89	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
90	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
91	`tox=3.2e-09 m`	Thickness of gate oxide layer.
92	`col=3.2e-16 F`	Gate overlap capacitance for a channel width of 1 um.
93	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
94	`nt=1.62e-20 J`	Thermal noise coefficient.
95	`nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise for a channel area of 1 um^2.
96	`nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise for a channel area of 1 um^2.
97	`nfcr=0(n)/7.3e-08(p) 1/V`
		Third coefficient of the flicker noise for a channel area of 1 um^2.
98	`dta=0 K`	Temperature offset of the device.
99	`rgo=0` Ω	Gate resistance.
100	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
101	`rvpoly=0` Ω `m`²	Vertical poly resistance.
102	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
103	`dlsil=0 m`	Silicide extension over the physical gate length.
104	`rth=300 K/W`	Thermal resistance.
105	`cth=3e-09 J/K`	Thermal capacitance.
106	`ath=0`	Temperature coefficient of the thermal resistance.
107	`binning=0`	flag for eldo model.
108	`type=n`	Transistor gender. Possible values are `n` and `p`.
109	`imax=1000 A`	Explosion current.
110	`tnom (C)`	alias of tnom.
111	`tref (C)`	alias of tnom.
112	`simkitver=3.4`
113	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`Pdiss (W)`	Dissipation.
49	`TK (K)`	Actual device temperature.
50	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
51	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
52	`table_ids (A)`	Current.
53	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
54	`table_qg (Coul)`	Charge at g node.
55	`table_qd (Coul)`	Charge at d node.
56	`table_qb (Coul)`	Charge at b node.
57	`pwr (W)`	Power.
58	`mos_region`	MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
59	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

Pdiss OP-48	fbet2 M-37	rgo M-106	tdelay M-11
TK OP-49	fknee OP-47	rint M-107	tempeff O-1
a1r M-77	fug OP-44	rout OP-40	thephr M-42
a2r M-81	gatenoise M-100	rshg M-109	ther1 M-53
a3r M-84	gds OP-17	rth M-112	ther2 M-54
agidlr M-94	gm OP-15	rvpoly M-108	therr M-50
alpexp M-73	gmb OP-16	sdiblexp M-64	thesatexp M-58
alpr M-71	iavl OP-2	sdiblo M-63	thesatr M-55
ath M-114	ids OP-1	sl2ko M-22	thesrr M-39
bacc M-90	igaccr M-89	sl2phib M-30	thethexp M-61
beff OP-43	igb OP-5	sl3ko M-23	thethr M-60
betsq M-32	igd OP-4	sl3koexp M-24	tmin M-10
bgidl M-95	iginvr M-87	sla1 M-79	tnom M-117
binning M-115	igovr M-93	sla2 M-82	tox M-98
binv M-88	igs OP-3	sla3 M-85	tr M-17
cbb OP-33	keff OP-42	slalp M-72	tref M-118
cbd OP-30	kor M-20	sletabet M-34	trise I-8
cbg OP-31	kov M-92	slko M-21	type M-116
cbs OP-32	kpinv M-26	slphib M-29	u OP-39
cdb OP-21	l I-2	slssf M-69	vballmsg M-9
cdd OP-18	lap M-14	slthesat M-57	vbdbhigh M-6
cdg OP-19	leff OP-37	sqrtsff OP-46	vbdblow M-5
cds OP-20	level M-1	sqrtsfw OP-45	vbds M-4
cgb OP-25	lmin M-76	ssfr M-68	vbox M-3
cgd OP-22	lp1 M-36	sta1 M-78	vbsbhigh M-8
cgdol OP-34	lp2 M-38	stbgidl M-96	vbsblow M-7
cgg OP-23	lvar M-13	stetamob M-46	vds OP-6
cgidl M-97	m I-10	stop M-12	vdss OP-13
cgs OP-24	meff O-2	stphib M-28	vearly OP-41
cgsol OP-35	moexp M-67	stvfb M-19	vfb M-18
col M-99	moo M-65	swa1 M-80	vfbov M-91
compatible M-119	mor M-66	swa2 M-83	vgs OP-7
csb OP-29	mos_region OP-58	swa3 M-86	vgt OP-12
csd OP-26	mult I-1	swalp M-74	von OP-51
csg OP-27	nf I-4	swetamob M-47	vp M-75
css OP-28	nfar M-102	swko M-25	vsat OP-14
cth M-113	nfbr M-103	swphib M-31	vsb OP-8
ctype OP-50	nfcr M-104	swssf M-70	vth OP-11
diode_region OP-59	ngcon I-5	swtheph M-44	vto OP-9
dlsil M-110	nt M-101	swther M-52	vts OP-10
dta M-105	nu M-48	swthesat M-59	w I-3
etabetr M-33	nuexp M-49	swthesr M-41	weff OP-36
etamobr M-45	paramchk M-2	swtheth M-62	wot M-16
etaph M-43	phibr M-27	table_ids OP-52	wvar M-15
etar M-51	printscaled I-7	table_qb OP-56	xgw I-6
etasat M-56	pwr OP-57	table_qd OP-55	xpart M-111
etasr M-40	region I-9	table_qg OP-54
fbet1 M-35	rg OP-38	table_vth OP-53

MOS Model 11, Level 1101 (mos11011)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11011 parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`lmin=0 m`	Device length low limit for binning selection.
12	`lmax=1 m`	Device length high limit for binning selection.
13	`wmin=0 m`	Device width low limit for binning selection.
14	`wmax=1 m`	Device width high limit for binning selection.
15	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
16	`poko=0.5` `V`	Coefficient for the geometry independent part of KO.
17	`plko=0` `V`	Coefficient for the length dependence of KO.
18	`pwko=0` `V`	Coefficient for the width dependence of KO.
19	`plwko=0` `V`	Coefficient for the length times width dependence of KO.
20	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
21	`pophib=0.95 V`	Coefficient for the geometric independent part of PHIB.
22	`plphib=0 V`	Coefficient for the length dependence of PHIB.
23	`pwphib=0 V`	Coefficient for the width dependence of PHIB.
24	`plwphib=0 V`	Coefficient for the length times width dependence of PHIB.
25	`pobet=0.00192(n)/0.000381(p) A/V`²
		Coefficient for the geometry independent part of BET.
26	`plbet=0 A/V`²	Coefficient for the length dependence of BET.
27	`pwbet=0 A/V`²	Coefficient for the width dependence of BET.
28	`plwbet=0 A/V`²	Coefficient for the width over length dependence of BET.
29	`pothesr=0.356(n)/0.73(p) 1/V`
		Coefficient of the geometry independent part of THESR.
30	`plthesr=0 1/V`	Coefficient of the length dependence of THESR.
31	`pwthesr=0 1/V`	Coefficient of the width dependence of THESR.
32	`plwthesr=0 1/V`	Coefficient of the length times width dependence of THESR.
33	`potheph=0.0129(n)/0.001(p) 1/V`
		Coefficient of the geometry independent part of THEPH.
34	`pltheph=0 1/V`	Coefficient of the length dependence of THEPH.
35	`pwtheph=0 1/V`	Coefficient of the width dependence of THEPH.
36	`plwtheph=0 1/V`	Coefficient of the length times width dependence of THEPH.
37	`poetamob=1.4(n)/3(p)`
		Coefficient of the geometry independent part of ETAMOB.
38	`pletamob=0`	Coefficient of the length dependence of ETAMOB.
39	`pwetamob=0`	Coefficient of the width dependence of ETAMOB.
40	`plwetamob=0`	Coefficient of the length times width dependence of ETAMOB.
41	`pother=0.0812(n)/0.079(p) 1/V`
		Coefficient of the geometry independent part of THER.
42	`plther=0 1/V`	Coefficient of the length dependence of THER.
43	`pwther=0 1/V`	Coefficient of the width dependence of THER.
44	`plwther=0 1/V`	Coefficient of the length times width dependence of THER.
45	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
46	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
47	`pothesat=0.251(n)/0.173(p) 1/V`
		Coefficient of the geometry independent part of THESAT.
48	`plthesat=0 1/V`	Coefficient of the length dependence of THESAT.
49	`pwthesat=0 1/V`	Coefficient of the width dependence of THESAT.
50	`plwthesat=0 1/V`	Coefficient of the length times width dependence of THESAT.
51	`potheth=1e-05(n)/0(p) 1/V`³
		Coefficient of the geometry independent part of THETH.
52	`pltheth=0 1/V`³	Coefficient of the length dependence of THETH.
53	`pwtheth=0 1/V`³	Coefficient of the width dependence of THETH.
54	`plwtheth=0 1/V`³	Coefficient of the length times width dependence of THETH.
55	`posdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Coefficient of the geometry independent part of SDIBL.
56	`plsdibl=0 1/``V`
		Coefficient of the length dependence of SDIBL.
57	`pwsdibl=0 1/``V`
		Coefficient of the width dependence of SDIBL.
58	`plwsdibl=0 1/``V`
		Coefficient of the length times width dependence of SDIBL.
59	`pomo=0`	Coefficient of the geometry independent part of MO.
60	`plmo=0`	Coefficient of the length dependence of MO.
61	`pwmo=0`	Coefficient of the width dependence of MO.
62	`plwmo=0`	Coefficient of the length times width dependence of MO.
63	`possf=0.012(n)/0.01(p) 1/``V`
		Coefficient of the geometry independent part of SSF.
64	`plssf=0 1/``V`	Coefficient of the length dependence of SSF.
65	`pwssf=0 1/``V`	Coefficient of the width dependence of SSF.
66	`plwssf=0 1/``V`
		Coefficient of the length times width dependence of SSF.
67	`poalp=0.025`	Coefficient of the geometry independent part of ALP.
68	`plalp=0`	Coefficient of the length dependence of ALP.
69	`pwalp=0`	Coefficient of the width dependence of ALP.
70	`plwalp=0`	Coefficient of the length times width dependence of ALP.
71	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
72	`pomexp=0.2`	Coefficient of the geometry independent part of MEXP.
73	`plmexp=0`	Coefficient of the length dependence of MEXP.
74	`pwmexp=0`	Coefficient of the width dependence of MEXP.
75	`plwmexp=0`	Coefficient of the length times width dependence of MEXP.
76	`poa1=6.02(n)/6.86(p)`
		Coefficient of the geometry independent part of A1.
77	`pla1=0`	Coefficient of the length dependence of A1.
78	`pwa1=0`	Coefficient of the width dependence of A1.
79	`plwa1=0`	Coefficient of the length times width dependence of A1.
80	`poa2=38(n)/57.3(p) V`
		Coefficient of the geometry independent part of A2.
81	`pla2=0 V`	Coefficient of the length dependence of A2.
82	`pwa2=0 V`	Coefficient of the width dependence of A2.
83	`plwa2=0 V`	Coefficient of the length times width dependence of A2.
84	`poa3=0.641(n)/0.425(p)`
		Coefficient of the geometry independent part of A3.
85	`pla3=0`	Coefficient of the length dependence of A3.
86	`pwa3=0`	Coefficient of the width dependence of A3.
87	`plwa3=0`	Coefficient of the length times width dependence of A3.
88	`poiginv=0 A/V`²	Coefficient of the geometry independent part of IGINV.
89	`pliginv=0 A/V`²	Coefficient of the length dependence of IGINV.
90	`pwiginv=0 A/V`²	Coefficient of the width dependence of IGINV.
91	`plwiginv=0 A/V`²	Coefficient of the length times width dependence of IGINV.
92	`pobinv=48(n)/87.5(p) V`
		Coefficient of the geometry independent part of BINV.
93	`plbinv=0 V`	Coefficient of the length dependence of BINV.
94	`pwbinv=0 V`	Coefficient of the width dependence of BINV.
95	`plwbinv=0 V`	Coefficient of the length times width dependence of BINV.
96	`poigacc=0 A/V`²	Coefficient of the geometry independent part of IGACC.
97	`pligacc=0 A/V`²	Coefficient of the length dependence of IGACC.
98	`pwigacc=0 A/V`²	Coefficient of the width dependence of IGACC.
99	`plwigacc=0 A/V`²	Coefficient of the length times width dependence of IGACC.
100	`pobacc=48 V`	Coefficient of the geometry independent part of BACC.
101	`plbacc=0 V`	Coefficient of the length dependence of BACC.
102	`pwbacc=0 V`	Coefficient of the width dependence of BACC.
103	`plwbacc=0 V`	Coefficient of the length times width dependence of BACC.
104	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
105	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
106	`poigov=0 A/V`²	Coefficient of the geometry independent part of IGOV.
107	`pligov=0 A/V`²	Coefficient of the length dependence of IGOV.
108	`pwigov=0 A/V`²	Coefficient of the width dependence of IGOV.
109	`plwigov=0 A/V`²	Coefficient of the length times width dependence of IGOV.
110	`poagidl=0 A/V`³	Coefficient of the geometry independent part of AGIDL.
111	`plagidl=0 A/V`³	Coefficient of the length dependence of AGIDL.
112	`pwagidl=0 A/V`³	Coefficient of the width dependence of AGIDL.
113	`plwagidl=0 A/V`³	Coefficient of the length times width dependence of AGIDL.
114	`pobgidl=41 V`	Coefficient of the geometry independent part of BGIDL.
115	`plbgidl=0 V`	Coefficient of the length dependence of BGIDL.
116	`pwbgidl=0 V`	Coefficient of the width dependence of BGIDL.
117	`plwbgidl=0 V`	Coefficient of the length times width dependence of BGIDL.
118	`pocgidl=0`	Coefficient of the geometry independent part of CGIDL.
119	`plcgidl=0`	Coefficient of the length dependence of CGIDL.
120	`pwcgidl=0`	Coefficient of the width dependence of CGIDL.
121	`plwcgidl=0`	Coefficient of the length times width dependence of CGIDL.
122	`tox=3.2e-09 m`	Thickness of gate oxide layer.
123	`pocox=2.98e-14(n)/2.72e-14(p) F`
		Coefficient of the geometry independent part of COX.
124	`plcox=0 F`	Coefficient of the length dependence of COX.
125	`pwcox=0 F`	Coefficient of the width dependence of COX.
126	`plwcox=0 F`	Coefficient of the length times width dependence of COX.
127	`pocgdo=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGDO.
128	`plcgdo=0 F`	Coefficient of the length dependence of CGDO.
129	`pwcgdo=0 F`	Coefficient of the width dependence of CGDO.
130	`plwcgdo=0 F`	Coefficient of the length time width dependence of CGDO.
131	`pocgso=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGSO.
132	`plcgso=0 F`	Coefficient of the length dependence of CGSO.
133	`pwcgso=0 F`	Coefficient of the width dependence of CGSO.
134	`plwcgso=0 F`	Coefficient of the length times width dependence of CGSO.
135	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
136	`nt=1.62e-20 J`	Thermal noise coefficient.
137	`ponfa=8.32e+22(n)/1.9e+22(p) 1/V m`⁴
		Coefficient of the geometry independent part of NFA.
138	`plnfa=0 1/V m`⁴	Coefficient of the length dependence of NFA.
139	`pwnfa=0 1/V m`⁴	Coefficient of the width dependence of NFA.
140	`plwnfa=0 1/V m`⁴	Coefficient of the length times width dependence of NFA.
141	`ponfb=2.51e+07(n)/5.04e+06(p) 1/V m`²
		Coefficient of the geometry independent part of NFB.
142	`plnfb=0 1/V m`²	Coefficient of the length dependence of NFB.
143	`pwnfb=0 1/V m`²	Coefficient of the width dependence of NFB.
144	`plwnfb=0 1/V m`²	Coefficient of the length times width dependence of NFB.
145	`ponfc=0(n)/3.63e-10(p) 1/V`
		Coefficient of the geometry independent part of NFC.
146	`plnfc=0 1/V`	Coefficient of the length dependence of NFC.
147	`pwnfc=0 1/V`	Coefficient of the width dependence of NFC.
148	`plwnfc=0 1/V`	Coefficient of the length times width dependence of NFC.
149	`potvfb=0.0005 V/K`	Coefficient of the geometry independent part of STVFB.
150	`pltvfb=0 V/K`	Coefficient of the length dependence of STVFB.
151	`pwtvfb=0 V/K`	Coefficient of the width dependence of STVFB.
152	`plwtvfb=0 V/K`	Coefficient of the length times width dependence of STVFB.
153	`potphib=-0.00085 V/K`
		Coefficient of the geometry independent part of STPHIB.
154	`pltphib=0 V/K`	Coefficient of the length dependence of STPHIB.
155	`pwtphib=0 V/K`	Coefficient of the width dependence of STPHIB.
156	`plwtphib=0 V/K`	Coefficient of the length times width dependence of STPHIB.
157	`potetabet=1.3(n)/0.5(p)`
		Coefficient of the geometry independent part of ETABET.
158	`pltetabet=0`	Coefficient of the length dependence of ETABET.
159	`pwtetabet=0`	Coefficient of the width dependence of ETABET.
160	`plwtetabet=0`	Coefficient of the length times width dependence of ETABET.
161	`potetasr=0.65(n)/0.5(p)`
		Coefficient of the geometry independent part of ETASR.
162	`pltetasr=0`	Coefficient of the length dependence of ETASR.
163	`pwtetasr=0`	Coefficient of the width dependence of ETASR.
164	`plwtetasr=0`	Coefficient of the length times width dependence of ETASR.
165	`potetaph=1.35(n)/3.75(p)`
		Coefficient of the geometry independent part of ETAPH.
166	`pltetaph=0`	Coefficient of the length dependence of ETAPH.
167	`pwtetaph=0`	Coefficient of the width dependence of ETAPH.
168	`plwtetaph=0`	Coefficient of the length times width dependence of ETAPH.
169	`potetamob=0 1/K`	Coefficient of the geometry independent part of STETAMOB.
170	`pltetamob=0 1/K`	Coefficient of the length dependence of STETAMOB.
171	`pwtetamob=0 1/K`	Coefficient of the width dependence of STETAMOB.
172	`plwtetamob=0 1/K`	Coefficient of the length times width dependence of STETAMOB.
173	`nu=2`	Exponent of field dependence of mobility model.
174	`potnuexp=5.25(n)/3.23(p)`
		Coefficient of the geometry independent part of NUEXP.
175	`pltnuexp=0`	Coefficient of the length dependence of NUEXP.
176	`pwtnuexp=0`	Coefficient of the width dependence of NUEXP.
177	`plwtnuexp=0`	Coefficient of the length times width dependence of NUEXP.
178	`potetar=0.95(n)/0.4(p)`
		Coefficient of the geometry independent part of ETAR.
179	`pltetar=0`	Coefficient of the length dependence of ETAR.
180	`pwtetar=0`	Coefficient of the width dependence of ETAR.
181	`plwtetar=0`	Coefficient of the length times width dependence of ETAR.
182	`potetasat=1.04(n)/0.86(p)`
		Coefficient of the geometry independent part of ETASAT.
183	`pltetasat=0`	Coefficient of the length dependence of ETASAT.
184	`pwtetasat=0`	Coefficient of the width dependence of ETASAT.
185	`plwtetasat=0`	Coefficient of the length times width dependence of ETASAT.
186	`pota1=0 1/K`	Coefficient of the geometry independent part of STA1.
187	`plta1=0 1/K`	Coefficient of the length dependence of STA1.
188	`pwta1=0 1/K`	Coefficient of the width dependence of STA1.
189	`plwta1=0 1/K`	Coefficient of the length times width dependence of STA1.
190	`potbgidl=-0.000364 V/K`
		Coefficient of the geometry independent part of STBGIDL.
191	`pltbgidl=0 V/K`	Coefficient of the length dependence of STBGIDL.
192	`pwtbgidl=0 V/K`	Coefficient of the width dependence of STBGIDL.
193	`plwtbgidl=0 V/K`	Coefficient of the length times width dependence of STBGIDL.
194	`dta=0 K`	Temperature offset of the device.
195	`rgo=0` Ω	Gate resistance.
196	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
197	`rvpoly=0` Ω `m`²	Vertical poly resistance.
198	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
199	`dlsil=0 m`	Silicide extension over the physical gate length.
200	`binning=0`	flag for eldo model.
201	`type=n`	Transistor gender. Possible values are `n` and `p`.
202	`imax=1000 A`	Explosion current.
203	`tnom (C)`	alias of tnom.
204	`tref (C)`	alias of tnom.
205	`simkitver=3.4`
206	`compatible=spectre`
		Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`BET (A/V`²`)`	Gain factor.
49	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
50	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
51	`table_ids (A)`	Current.
52	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
53	`table_qg (Coul)`	Charge at g node.
54	`table_qd (Coul)`	Charge at d node.
55	`table_qb (Coul)`	Charge at b node.
56	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
57	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

BET OP-48	pliginv M-96	poa3 M-91	pwtetaph M-174
beff OP-43	pligov M-114	poagidl M-117	pwtetar M-187
binning M-208	plko M-24	poalp M-74	pwtetasat M-191
cbb OP-33	plmexp M-80	pobacc M-107	pwtetasr M-170
cbd OP-30	plmo M-67	pobet M-32	pwtheph M-42
cbg OP-31	plnfa M-145	pobgidl M-121	pwther M-50
cbs OP-32	plnfb M-149	pobinv M-99	pwthesat M-56
cdb OP-21	plnfc M-153	pocgdo M-134	pwthesr M-38
cdd OP-18	plphib M-29	pocgidl M-125	pwtheth M-60
cdg OP-19	plsdibl M-63	pocgso M-138	pwtnuexp M-183
cds OP-20	plssf M-71	pocox M-130	pwtphib M-162
cgb OP-25	plta1 M-194	poetamob M-44	pwtvfb M-158
cgd OP-22	pltbgidl M-198	poigacc M-103	region I-9
cgdol OP-34	pltetabet M-165	poiginv M-95	rg OP-38
cgg OP-23	pltetamob M-177	poigov M-113	rgo M-202
cgs OP-24	pltetaph M-173	poko M-23	rint M-203
cgsol OP-35	pltetar M-186	pomexp M-79	rout OP-40
compatible M-212	pltetasat M-190	pomo M-66	rshg M-205
csb OP-29	pltetasr M-169	ponfa M-144	rvpoly M-204
csd OP-26	pltheph M-41	ponfb M-148	sqrtsff OP-46
csg OP-27	plther M-49	ponfc M-152	sqrtsfw OP-45
css OP-28	plthesat M-55	pophib M-28	stop M-12
ctype OP-49	plthesr M-37	posdibl M-62	table_ids OP-51
diode_region OP-57	pltheth M-59	possf M-70	table_qb OP-55
dlsil M-206	pltnuexp M-182	pota1 M-193	table_qd OP-54
dta M-201	pltphib M-161	potbgidl M-197	table_qg OP-53
fknee OP-47	pltvfb M-157	potetabet M-164	table_vth OP-52
fug OP-44	plwa1 M-86	potetamob M-176	tdelay M-11
gatenoise M-142	plwa2 M-90	potetaph M-172	tempeff O-1
gds OP-17	plwa3 M-94	potetar M-185	ther1 M-52
gm OP-15	plwagidl M-120	potetasat M-189	ther2 M-53
gmb OP-16	plwalp M-77	potetasr M-168	tmin M-10
iavl OP-2	plwbacc M-110	potheph M-40	tnom M-210
ids OP-1	plwbet M-35	pother M-48	tox M-129
igb OP-5	plwbgidl M-124	pothesat M-54	tr M-17
igd OP-4	plwbinv M-102	pothesr M-36	tref M-211
igs OP-3	plwcgdo M-137	potheth M-58	trise I-8
keff OP-42	plwcgidl M-128	potnuexp M-181	type M-209
kov M-112	plwcgso M-141	potphib M-160	u OP-39
kpinv M-27	plwcox M-133	potvfb M-156	vballmsg M-9
l I-2	plwetamob M-47	printscaled I-7	vbdbhigh M-6
lap M-14	plwigacc M-106	pwa1 M-85	vbdblow M-5
leff OP-37	plwiginv M-98	pwa2 M-89	vbds M-4
level M-1	plwigov M-116	pwa3 M-93	vbox M-3
lmax M-19	plwko M-26	pwagidl M-119	vbsbhigh M-8
lmin M-18	plwmexp M-82	pwalp M-76	vbsblow M-7
lvar M-13	plwmo M-69	pwbacc M-109	vds OP-6
m I-10	plwnfa M-147	pwbet M-34	vdss OP-13
meff O-2	plwnfb M-151	pwbgidl M-123	vearly OP-41
mos_region OP-56	plwnfc M-155	pwbinv M-101	vfb M-22
mult I-1	plwphib M-31	pwcgdo M-136	vfbov M-111
nf I-4	plwsdibl M-65	pwcgidl M-127	vgs OP-7
ngcon I-5	plwssf M-73	pwcgso M-140	vgt OP-12
nt M-143	plwta1 M-196	pwcox M-132	von OP-50
nu M-180	plwtbgidl M-200	pwetamob M-46	vp M-78
paramchk M-2	plwtetabet M-167	pwigacc M-105	vsat OP-14
pla1 M-84	plwtetamob M-179	pwiginv M-97	vsb OP-8
pla2 M-88	plwtetaph M-175	pwigov M-115	vth OP-11
pla3 M-92	plwtetar M-188	pwko M-25	vto OP-9
plagidl M-118	plwtetasat M-192	pwmexp M-81	vts OP-10
plalp M-75	plwtetasr M-171	pwmo M-68	w I-3
plbacc M-108	plwtheph M-43	pwnfa M-146	weff OP-36
plbet M-33	plwther M-51	pwnfb M-150	wmax M-21
plbgidl M-122	plwthesat M-57	pwnfc M-154	wmin M-20
plbinv M-100	plwthesr M-39	pwphib M-30	wot M-16
plcgdo M-135	plwtheth M-61	pwsdibl M-64	wvar M-15
plcgidl M-126	plwtnuexp M-184	pwssf M-72	xgw I-6
plcgso M-139	plwtphib M-163	pwta1 M-195	xpart M-207
plcox M-131	plwtvfb M-159	pwtbgidl M-199
pletamob M-45	poa1 M-83	pwtetabet M-166
pligacc M-104	poa2 M-87	pwtetamob M-178

MOS Model 11, Level 1101 (mos11011t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
1	0 `m=1`	Alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11011t parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`lmin=0 m`	Device length low limit for binning selection.
12	`lmax=1 m`	Device length high limit for binning selection.
13	`wmin=0 m`	Device width low limit for binning selection.
14	`wmax=1 m`	Device width high limit for binning selection.
15	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
16	`poko=0.5` `V`	Coefficient for the geometry independent part of KO.
17	`plko=0` `V`	Coefficient for the length dependence of KO.
18	`pwko=0` `V`	Coefficient for the width dependence of KO.
19	`plwko=0` `V`	Coefficient for the length times width dependence of KO.
20	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
21	`pophib=0.95 V`	Coefficient for the geometric independent part of PHIB.
22	`plphib=0 V`	Coefficient for the length dependence of PHIB.
23	`pwphib=0 V`	Coefficient for the width dependence of PHIB.
24	`plwphib=0 V`	Coefficient for the length times width dependence of PHIB.
25	`pobet=0.00192(n)/0.000381(p) A/V`²
		Coefficient for the geometry independent part of BET.
26	`plbet=0 A/V`²	Coefficient for the length dependence of BET.
27	`pwbet=0 A/V`²	Coefficient for the width dependence of BET.
28	`plwbet=0 A/V`²	Coefficient for the width over length dependence of BET.
29	`pothesr=0.356(n)/0.73(p) 1/V`
		Coefficient of the geometry independent part of THESR.
30	`plthesr=0 1/V`	Coefficient of the length dependence of THESR.
31	`pwthesr=0 1/V`	Coefficient of the width dependence of THESR.
32	`plwthesr=0 1/V`	Coefficient of the length times width dependence of THESR.
33	`potheph=0.0129(n)/0.001(p) 1/V`
		Coefficient of the geometry independent part of THEPH.
34	`pltheph=0 1/V`	Coefficient of the length dependence of THEPH.
35	`pwtheph=0 1/V`	Coefficient of the width dependence of THEPH.
36	`plwtheph=0 1/V`	Coefficient of the length times width dependence of THEPH.
37	`poetamob=1.4(n)/3(p)`
		Coefficient of the geometry independent part of ETAMOB.
38	`pletamob=0`	Coefficient of the length dependence of ETAMOB.
39	`pwetamob=0`	Coefficient of the width dependence of ETAMOB.
40	`plwetamob=0`	Coefficient of the length times width dependence of ETAMOB.
41	`pother=0.0812(n)/0.079(p) 1/V`
		Coefficient of the geometry independent part of THER.
42	`plther=0 1/V`	Coefficient of the length dependence of THER.
43	`pwther=0 1/V`	Coefficient of the width dependence of THER.
44	`plwther=0 1/V`	Coefficient of the length times width dependence of THER.
45	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
46	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
47	`pothesat=0.251(n)/0.173(p) 1/V`
		Coefficient of the geometry independent part of THESAT.
48	`plthesat=0 1/V`	Coefficient of the length dependence of THESAT.
49	`pwthesat=0 1/V`	Coefficient of the width dependence of THESAT.
50	`plwthesat=0 1/V`	Coefficient of the length times width dependence of THESAT.
51	`potheth=1e-05(n)/0(p) 1/V`³
		Coefficient of the geometry independent part of THETH.
52	`pltheth=0 1/V`³	Coefficient of the length dependence of THETH.
53	`pwtheth=0 1/V`³	Coefficient of the width dependence of THETH.
54	`plwtheth=0 1/V`³	Coefficient of the length times width dependence of THETH.
55	`posdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Coefficient of the geometry independent part of SDIBL.
56	`plsdibl=0 1/``V`
		Coefficient of the length dependence of SDIBL.
57	`pwsdibl=0 1/``V`
		Coefficient of the width dependence of SDIBL.
58	`plwsdibl=0 1/``V`	Coefficient of the length times width dependence of SDIBL.
59	`pomo=0`	Coefficient of the geometry independent part of MO.
60	`plmo=0`	Coefficient of the length dependence of MO.
61	`pwmo=0`	Coefficient of the width dependence of MO.
62	`plwmo=0`	Coefficient of the length times width dependence of MO.
63	`possf=0.012(n)/0.01(p) 1/``V`
		Coefficient of the geometry independent part of SSF.
64	`plssf=0 1/``V`	Coefficient of the length dependence of SSF.
65	`pwssf=0 1/``V`	Coefficient of the width dependence of SSF.
66	`plwssf=0 1/``V`	Coefficient of the length times width dependence of SSF.
67	`poalp=0.025`	Coefficient of the geometry independent part of ALP.
68	`plalp=0`	Coefficient of the length dependence of ALP.
69	`pwalp=0`	Coefficient of the width dependence of ALP.
70	`plwalp=0`	Coefficient of the length times width dependence of ALP.
71	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
72	`pomexp=0.2`	Coefficient of the geometry independent part of MEXP.
73	`plmexp=0`	Coefficient of the length dependence of MEXP.
74	`pwmexp=0`	Coefficient of the width dependence of MEXP.
75	`plwmexp=0`	Coefficient of the length times width dependence of MEXP.
76	`poa1=6.02(n)/6.86(p)`
		Coefficient of the geometry independent part of A1.
77	`pla1=0`	Coefficient of the length dependence of A1.
78	`pwa1=0`	Coefficient of the width dependence of A1.
79	`plwa1=0`	Coefficient of the length times width dependence of A1.
80	`poa2=38(n)/57.3(p) V`
		Coefficient of the geometry independent part of A2.
81	`pla2=0 V`	Coefficient of the length dependence of A2.
82	`pwa2=0 V`	Coefficient of the width dependence of A2.
83	`plwa2=0 V`	Coefficient of the length times width dependence of A2.
84	`poa3=0.641(n)/0.425(p)`
		Coefficient of the geometry independent part of A3.
85	`pla3=0`	Coefficient of the length dependence of A3.
86	`pwa3=0`	Coefficient of the width dependence of A3.
87	`plwa3=0`	Coefficient of the length times width dependence of A3.
88	`poiginv=0 A/V`²	Coefficient of the geometry independent part of IGINV.
89	`pliginv=0 A/V`²	Coefficient of the length dependence of IGINV.
90	`pwiginv=0 A/V`²	Coefficient of the width dependence of IGINV.
91	`plwiginv=0 A/V`²	Coefficient of the length times width dependence of IGINV.
92	`pobinv=48(n)/87.5(p) V`
		Coefficient of the geometry independent part of BINV.
93	`plbinv=0 V`	Coefficient of the length dependence of BINV.
94	`pwbinv=0 V`	Coefficient of the width dependence of BINV.
95	`plwbinv=0 V`	Coefficient of the length times width dependence of BINV.
96	`poigacc=0 A/V`²	Coefficient of the geometry independent part of IGACC.
97	`pligacc=0 A/V`²	Coefficient of the length dependence of IGACC.
98	`pwigacc=0 A/V`²	Coefficient of the width dependence of IGACC.
99	`plwigacc=0 A/V`²	Coefficient of the length times width dependence of IGACC.
100	`pobacc=48 V`	Coefficient of the geometry independent part of BACC.
101	`plbacc=0 V`	Coefficient of the length dependence of BACC.
102	`pwbacc=0 V`	Coefficient of the width dependence of BACC.
103	`plwbacc=0 V`	Coefficient of the length times width dependence of BACC.
104	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
105	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
106	`poigov=0 A/V`²	Coefficient of the geometry independent part of IGOV.
107	`pligov=0 A/V`²	Coefficient of the length dependence of IGOV.
108	`pwigov=0 A/V`²	Coefficient of the width dependence of IGOV.
109	`plwigov=0 A/V`²	Coefficient of the length times width dependence of IGOV.
110	`poagidl=0 A/V`³	Coefficient of the geometry independent part of AGIDL.
111	`plagidl=0 A/V`³	Coefficient of the length dependence of AGIDL.
112	`pwagidl=0 A/V`³	Coefficient of the width dependence of AGIDL.
113	`plwagidl=0 A/V`³	Coefficient of the length times width dependence of AGIDL.
114	`pobgidl=41 V`	Coefficient of the geometry independent part of BGIDL.
115	`plbgidl=0 V`	Coefficient of the length dependence of BGIDL.
116	`pwbgidl=0 V`	Coefficient of the width dependence of BGIDL.
117	`plwbgidl=0 V`	Coefficient of the length times width dependence of BGIDL.
118	`pocgidl=0`	Coefficient of the geometry independent part of CGIDL.
119	`plcgidl=0`	Coefficient of the length dependence of CGIDL.
120	`pwcgidl=0`	Coefficient of the width dependence of CGIDL.
121	`plwcgidl=0`	Coefficient of the length times width dependence of CGIDL.
122	`tox=3.2e-09 m`	Thickness of gate oxide layer.
123	`pocox=2.98e-14(n)/2.72e-14(p) F`
		Coefficient of the geometry independent part of COX.
124	`plcox=0 F`	Coefficient of the length dependence of COX.
125	`pwcox=0 F`	Coefficient of the width dependence of COX.
126	`plwcox=0 F`	Coefficient of the length times width dependence of COX.
127	`pocgdo=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGDO.
128	`plcgdo=0 F`	Coefficient of the length dependence of CGDO.
129	`pwcgdo=0 F`	Coefficient of the width dependence of CGDO.
130	`plwcgdo=0 F`	Coefficient of the length time width dependence of CGDO.
131	`pocgso=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGSO.
132	`plcgso=0 F`	Coefficient of the length dependence of CGSO.
133	`pwcgso=0 F`	Coefficient of the width dependence of CGSO.
134	`plwcgso=0 F`	Coefficient of the length times width dependence of CGSO.
135	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
136	`nt=1.62e-20 J`	Thermal noise coefficient.
137	`ponfa=8.32e+22(n)/1.9e+22(p) 1/V m`⁴
		Coefficient of the geometry independent part of NFA.
138	`plnfa=0 1/V m`⁴	Coefficient of the length dependence of NFA.
139	`pwnfa=0 1/V m`⁴	Coefficient of the width dependence of NFA.
140	`plwnfa=0 1/V m`⁴	Coefficient of the length times width dependence of NFA.
141	`ponfb=2.51e+07(n)/5.04e+06(p) 1/V m`²
		Coefficient of the geometry independent part of NFB.
142	`plnfb=0 1/V m`²	Coefficient of the length dependence of NFB.
143	`pwnfb=0 1/V m`²	Coefficient of the width dependence of NFB.
144	`plwnfb=0 1/V m`²	Coefficient of the length times width dependence of NFB.
145	`ponfc=0(n)/3.63e-10(p) 1/V`
		Coefficient of the geometry independent part of NFC.
146	`plnfc=0 1/V`	Coefficient of the length dependence of NFC.
147	`pwnfc=0 1/V`	Coefficient of the width dependence of NFC.
148	`plwnfc=0 1/V`	Coefficient of the length times width dependence of NFC.
149	`potvfb=0.0005 V/K`	Coefficient of the geometry independent part of STVFB.
150	`pltvfb=0 V/K`	Coefficient of the length dependence of STVFB.
151	`pwtvfb=0 V/K`	Coefficient of the width dependence of STVFB.
152	`plwtvfb=0 V/K`	Coefficient of the length times width dependence of STVFB.
153	`potphib=-0.00085 V/K`
		Coefficient of the geometry independent part of STPHIB.
154	`pltphib=0 V/K`	Coefficient of the length dependence of STPHIB.
155	`pwtphib=0 V/K`	Coefficient of the width dependence of STPHIB.
156	`plwtphib=0 V/K`	Coefficient of the length times width dependence of STPHIB.
157	`potetabet=1.3(n)/0.5(p)`
		Coefficient of the geometry independent part of ETABET.
158	`pltetabet=0`	Coefficient of the length dependence of ETABET.
159	`pwtetabet=0`	Coefficient of the width dependence of ETABET.
160	`plwtetabet=0`	Coefficient of the length times width dependence of ETABET.
161	`potetasr=0.65(n)/0.5(p)`
		Coefficient of the geometry independent part of ETASR.
162	`pltetasr=0`	Coefficient of the length dependence of ETASR.
163	`pwtetasr=0`	Coefficient of the width dependence of ETASR.
164	`plwtetasr=0`	Coefficient of the length times width dependence of ETASR.
165	`potetaph=1.35(n)/3.75(p)`
		Coefficient of the geometry independent part of ETAPH.
166	`pltetaph=0`	Coefficient of the length dependence of ETAPH.
167	`pwtetaph=0`	Coefficient of the width dependence of ETAPH.
168	`plwtetaph=0`	Coefficient of the length times width dependence of ETAPH.
169	`potetamob=0 1/K`	Coefficient of the geometry independent part of STETAMOB.
170	`pltetamob=0 1/K`	Coefficient of the length dependence of STETAMOB.
171	`pwtetamob=0 1/K`	Coefficient of the width dependence of STETAMOB.
172	`plwtetamob=0 1/K`	Coefficient of the length times width dependence of STETAMOB.
173	`nu=2`	Exponent of field dependence of mobility model.
174	`potnuexp=5.25(n)/3.23(p)`
		Coefficient of the geometry independent part of NUEXP.
175	`pltnuexp=0`	Coefficient of the length dependence of NUEXP.
176	`pwtnuexp=0`	Coefficient of the width dependence of NUEXP.
177	`plwtnuexp=0`	Coefficient of the length times width dependence of NUEXP.
178	`potetar=0.95(n)/0.4(p)`
		Coefficient of the geometry independent part of ETAR.
179	`pltetar=0`	Coefficient of the length dependence of ETAR.
180	`pwtetar=0`	Coefficient of the width dependence of ETAR.
181	`plwtetar=0`	Coefficient of the length times width dependence of ETAR.
182	`potetasat=1.04(n)/0.86(p)`
		Coefficient of the geometry independent part of ETASAT.
183	`pltetasat=0`	Coefficient of the length dependence of ETASAT.
184	`pwtetasat=0`	Coefficient of the width dependence of ETASAT.
185	`plwtetasat=0`	Coefficient of the length times width dependence of ETASAT.
186	`pota1=0 1/K`	Coefficient of the geometry independent part of STA1.
187	`plta1=0 1/K`	Coefficient of the length dependence of STA1.
188	`pwta1=0 1/K`	Coefficient of the width dependence of STA1.
189	`plwta1=0 1/K`	Coefficient of the length times width dependence of STA1.
190	`potbgidl=-0.000364 V/K`
		Coefficient of the geometry independent part of STBGIDL.
191	`pltbgidl=0 V/K`	Coefficient of the length dependence of STBGIDL.
192	`pwtbgidl=0 V/K`	Coefficient of the width dependence of STBGIDL.
193	`plwtbgidl=0 V/K`	Coefficient of the length times width dependence of STBGIDL.
194	`dta=0 K`	Temperature offset of the device.
195	`rgo=0` Ω	Gate resistance.
196	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
197	`rvpoly=0` Ω `m`²	Vertical poly resistance.
198	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
199	`dlsil=0 m`	Silicide extension over the physical gate length.
200	`rth=300 K/W`	Thermal resistance.
201	`cth=3e-09 J/K`	Thermal capacitance.
202	`ath=0`	Temperature coefficient of the thermal resistance.
203	`binning=0`	flag for eldo model.
204	`type=n`	Transistor gender. Possible values are `n` and `p`.
205	`imax=1000 A`	Explosion current.
206	`tnom (C)`	alias of tnom.
207	`tref (C)`	alias of tnom.
208	`simkitver=3.4`
209	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`	Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`Pdiss (W)`	Dissipation.
49	`TK (K)`	Actual device temperature.
50	`BET (A/V`²`)`	Gain factor.
51	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
52	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
53	`table_ids (A)`	Current.
54	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
55	`table_qg (Coul)`	Charge at g node.
56	`table_qd (Coul)`	Charge at d node.
57	`table_qb (Coul)`	Charge at b node.
58	`pwr (W)`	Power.
59	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`
60	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

BET OP-50	plcox M-131	poa1 M-83	pwtetabet M-166
Pdiss OP-48	pletamob M-45	poa2 M-87	pwtetamob M-178
TK OP-49	pligacc M-104	poa3 M-91	pwtetaph M-174
ath M-210	pliginv M-96	poagidl M-117	pwtetar M-187
beff OP-43	pligov M-114	poalp M-74	pwtetasat M-191
binning M-211	plko M-24	pobacc M-107	pwtetasr M-170
cbb OP-33	plmexp M-80	pobet M-32	pwtheph M-42
cbd OP-30	plmo M-67	pobgidl M-121	pwther M-50
cbg OP-31	plnfa M-145	pobinv M-99	pwthesat M-56
cbs OP-32	plnfb M-149	pocgdo M-134	pwthesr M-38
cdb OP-21	plnfc M-153	pocgidl M-125	pwtheth M-60
cdd OP-18	plphib M-29	pocgso M-138	pwtnuexp M-183
cdg OP-19	plsdibl M-63	pocox M-130	pwtphib M-162
cds OP-20	plssf M-71	poetamob M-44	pwtvfb M-158
cgb OP-25	plta1 M-194	poigacc M-103	region I-9
cgd OP-22	pltbgidl M-198	poiginv M-95	rg OP-38
cgdol OP-34	pltetabet M-165	poigov M-113	rgo M-202
cgg OP-23	pltetamob M-177	poko M-23	rint M-203
cgs OP-24	pltetaph M-173	pomexp M-79	rout OP-40
cgsol OP-35	pltetar M-186	pomo M-66	rshg M-205
compatible M-215	pltetasat M-190	ponfa M-144	rth M-208
csb OP-29	pltetasr M-169	ponfb M-148	rvpoly M-204
csd OP-26	pltheph M-41	ponfc M-152	sqrtsff OP-46
csg OP-27	plther M-49	pophib M-28	sqrtsfw OP-45
css OP-28	plthesat M-55	posdibl M-62	stop M-12
cth M-209	plthesr M-37	possf M-70	table_ids OP-53
ctype OP-51	pltheth M-59	pota1 M-193	table_qb OP-57
diode_region OP-60	pltnuexp M-182	potbgidl M-197	table_qd OP-56
dlsil M-206	pltphib M-161	potetabet M-164	table_qg OP-55
dta M-201	pltvfb M-157	potetamob M-176	table_vth OP-54
fknee OP-47	plwa1 M-86	potetaph M-172	tdelay M-11
fug OP-44	plwa2 M-90	potetar M-185	tempeff O-1
gatenoise M-142	plwa3 M-94	potetasat M-189	ther1 M-52
gds OP-17	plwagidl M-120	potetasr M-168	ther2 M-53
gm OP-15	plwalp M-77	potheph M-40	tmin M-10
gmb OP-16	plwbacc M-110	pother M-48	tnom M-213
iavl OP-2	plwbet M-35	pothesat M-54	tox M-129
ids OP-1	plwbgidl M-124	pothesr M-36	tr M-17
igb OP-5	plwbinv M-102	potheth M-58	tref M-214
igd OP-4	plwcgdo M-137	potnuexp M-181	trise I-8
igs OP-3	plwcgidl M-128	potphib M-160	type M-212
keff OP-42	plwcgso M-141	potvfb M-156	u OP-39
kov M-112	plwcox M-133	printscaled I-7	vballmsg M-9
kpinv M-27	plwetamob M-47	pwa1 M-85	vbdbhigh M-6
l I-2	plwigacc M-106	pwa2 M-89	vbdblow M-5
lap M-14	plwiginv M-98	pwa3 M-93	vbds M-4
leff OP-37	plwigov M-116	pwagidl M-119	vbox M-3
level M-1	plwko M-26	pwalp M-76	vbsbhigh M-8
lmax M-19	plwmexp M-82	pwbacc M-109	vbsblow M-7
lmin M-18	plwmo M-69	pwbet M-34	vds OP-6
lvar M-13	plwnfa M-147	pwbgidl M-123	vdss OP-13
m I-10	plwnfb M-151	pwbinv M-101	vearly OP-41
meff O-2	plwnfc M-155	pwcgdo M-136	vfb M-22
mos_region OP-59	plwphib M-31	pwcgidl M-127	vfbov M-111
mult I-1	plwsdibl M-65	pwcgso M-140	vgs OP-7
nf I-4	plwssf M-73	pwcox M-132	vgt OP-12
ngcon I-5	plwta1 M-196	pwetamob M-46	von OP-52
nt M-143	plwtbgidl M-200	pwigacc M-105	vp M-78
nu M-180	plwtetabet M-167	pwiginv M-97	vsat OP-14
paramchk M-2	plwtetamob M-179	pwigov M-115	vsb OP-8
pla1 M-84	plwtetaph M-175	pwko M-25	vth OP-11
pla2 M-88	plwtetar M-188	pwmexp M-81	vto OP-9
pla3 M-92	plwtetasat M-192	pwmo M-68	vts OP-10
plagidl M-118	plwtetasr M-171	pwnfa M-146	w I-3
plalp M-75	plwtheph M-43	pwnfb M-150	weff OP-36
plbacc M-108	plwther M-51	pwnfc M-154	wmax M-21
plbet M-33	plwthesat M-57	pwphib M-30	wmin M-20
plbgidl M-122	plwthesr M-39	pwr OP-58	wot M-16
plbinv M-100	plwtheth M-61	pwsdibl M-64	wvar M-15
plcgdo M-135	plwtnuexp M-184	pwssf M-72	xgw I-6
plcgidl M-126	plwtphib M-163	pwta1 M-195	xpart M-207
plcgso M-139	plwtvfb M-159	pwtbgidl M-199

MOS Model 11, Level 1101 (mos1101e)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos1101e parameter=value ...

Model Parameters

1	`level=1.1e+03`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`tr=21 C`	Reference temperature.
7	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
8	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
9	`ko=0.5` `V`	Body-effect factor.
10	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
11	`phib=0.95 V`	Surface potential at the onset of strong inversion.
12	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
13	`bet=0.00192(n)/0.000381(p) A/V`²
		Gain factor.
14	`etabet=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
15	`thesr=0.356(n)/0.73(p) 1/V`
		Mobility degradation parameter due to surface roughness scattering.
16	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
17	`theph=0.0129(n)/0.001(p) 1/V`
		Mobility degradation parameter due to phonon scattering.
18	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
19	`etamob=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion charge.
20	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
21	`nu=2`	Exponent of field dependence of mobility model.
22	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
23	`ther=0.0812(n)/0.079(p) 1/V`
		Coefficient of series resistance.
24	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
25	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
26	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
27	`thesat=0.251(n)/0.173(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
28	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
29	`theth=1e-05(n)/0(p) 1/V`³
		Coefficient of self-heating.
30	`sdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Drain-induced barrier lowering parameter.
31	`mo=0`	Parameter for (short-channel) subthreshold slope.
32	`ssf=0.012(n)/0.01(p) 1/``V`
		Static-feedback parameter.
33	`alp=0.025`	Factor of channel length modulation.
34	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
35	`mexp=5`	Smoothing factor.
36	`a1=6.02(n)/6.86(p)`
		Factor of the weak-avalanche current.
37	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
38	`a2=38(n)/57.3(p) V`
		Exponent of the weak-avalanche current.
39	`a3=0.641(n)/0.425(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
40	`iginv=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
41	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
42	`igacc=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
43	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
44	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
45	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
46	`igov=0 A/V`²	Gain factor for Source/Drain overlap tunneling current.
47	`agidl=0 A/V`³	Gain factor for gate-induced leakage current.
48	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
49	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
50	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
51	`cox=2.98e-14(n)/2.72e-14(p) F`
		Oxide capacitance for the intrinsic channel (* mult).
52	`cgdo=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-drain overlap (* mult).
53	`cgso=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-source overlap (* mult).
54	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
55	`nt=1.62e-20 J`	Thermal noise coefficient.
56	`nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
57	`nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
58	`nfc=0(n)/3.63e-10(p) 1/V`
		Third coefficient of the flicker noise.
59	`tox=3.2e-09 m`	Thickness of gate oxide layer.
60	`dta=0 K`	Temperature offset of the device.
61	`rg=0` Ω	Gate resistance.
62	`binning=0`	Flag for eldo model.
63	`type=n`	Transistor gender. Possible values are `n` and `p`.
64	`imax=1000 A`	Explosion current.
65	`tnom (C)`	Alias of tnom.
66	`tref (C)`	Alias of tnom.
67	`simkitver=3.4`
68	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`rg (`Ω`)`	Gate resistance.
37	`u`	Transistor gain (gm/gds).
38	`rout (`Ω`)`	Small-signal output resistance (1/gds).
39	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
40	`keff (``V )`	Body effect parameter.
41	`beff (A/V`²`)`	Gain factor.
42	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
43	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
44	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
45	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
46	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
47	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
48	`table_ids (A)`	Current.
49	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
50	`table_qg (Coul)`	Charge at g node.
51	`table_qd (Coul)`	Charge at d node.
52	`table_qb (Coul)`	Charge at b node.
53	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
54	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

a1 M-43	ctype OP-46	nfa M-63	thesat M-34
a2 M-45	diode_region OP-54	nfb M-64	thesr M-22
a3 M-46	dta M-67	nfc M-65	theth M-36
agidl M-54	etabet M-21	nt M-62	tmin M-10
alp M-40	etamob M-26	nu M-28	tnom M-72
bacc M-50	etaph M-25	nuexp M-29	tox M-66
beff OP-41	etar M-31	paramchk M-2	tr M-13
bet M-20	etasat M-35	phib M-18	tref M-73
bgidl M-55	etasr M-23	printscaled I-2	trise I-3
binning M-70	fknee OP-45	region I-4	type M-71
binv M-48	fug OP-42	rg M-68	u OP-37
cbb OP-33	gatenoise M-61	rg OP-36	vballmsg M-9
cbd OP-30	gds OP-17	rout OP-38	vbdbhigh M-6
cbg OP-31	gm OP-15	sdibl M-37	vbdblow M-5
cbs OP-32	gmb OP-16	sqrtsff OP-44	vbds M-4
cdb OP-21	iavl OP-2	sqrtsfw OP-43	vbox M-3
cdd OP-18	ids OP-1	ssf M-39	vbsbhigh M-8
cdg OP-19	igacc M-49	sta1 M-44	vbsblow M-7
cds OP-20	igb OP-5	stbgidl M-56	vds OP-6
cgb OP-25	igd OP-4	stetamob M-27	vdss OP-13
cgd OP-22	iginv M-47	stop M-12	vearly OP-39
cgdo M-59	igov M-53	stphib M-19	vfb M-14
cgdol OP-34	igs OP-3	stvfb M-15	vfbov M-51
cgg OP-23	keff OP-40	table_ids OP-48	vgs OP-7
cgidl M-57	ko M-16	table_qb OP-52	vgt OP-12
cgs OP-24	kov M-52	table_qd OP-51	von OP-47
cgso M-60	kpinv M-17	table_qg OP-50	vp M-41
cgsol OP-35	level M-1	table_vth OP-49	vsat OP-14
compatible M-74	m I-5	tdelay M-11	vsb OP-8
cox M-58	meff O-2	tempeff O-1	vth OP-11
csb OP-29	mexp M-42	theph M-24	vto OP-9
csd OP-26	mo M-38	ther M-30	vts OP-10
csg OP-27	mos_region OP-53	ther1 M-32	xpart M-69
css OP-28	mult I-1	ther2 M-33

MOS Model 11, Level 1101 (mos1101et)

This is SimKit 4.3.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos1101et parameter=value ...

Model Parameters

1	`level=1.1e+03`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`tr=21 C`	Reference temperature.
7	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
8	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
9	`ko=0.5` `V`	Body-effect factor.
10	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
11	`phib=0.95 V`	Surface potential at the onset of strong inversion.
12	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
13	`bet=0.00192(n)/0.000381(p) A/V`²
		Gain factor.
14	`etabet=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
15	`thesr=0.356(n)/0.73(p) 1/V`
		Mobility degradation parameter due to surface roughness scattering.
16	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
17	`theph=0.0129(n)/0.001(p) 1/V`
		Mobility degradation parameter due to phonon scattering.
18	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
19	`etamob=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion charge.
20	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
21	`nu=2`	Exponent of field dependence of mobility model.
22	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
23	`ther=0.0812(n)/0.079(p) 1/V`
		Coefficient of series resistance.
24	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
25	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
26	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
27	`thesat=0.251(n)/0.173(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
28	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
29	`theth=1e-05(n)/0(p) 1/V`³
		Coefficient of self-heating.
30	`sdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Drain-induced barrier lowering parameter.
31	`mo=0`	Parameter for (short-channel) subthreshold slope.
32	`ssf=0.012(n)/0.01(p) 1/``V`
		Static-feedback parameter.
33	`alp=0.025`	Factor of channel length modulation.
34	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
35	`mexp=5`	Smoothing factor.
36	`a1=6.02(n)/6.86(p)`
		Factor of the weak-avalanche current.
37	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
38	`a2=38(n)/57.3(p) V`
		Exponent of the weak-avalanche current.
39	`a3=0.641(n)/0.425(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
40	`iginv=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
41	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
42	`igacc=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
43	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
44	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
45	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
46	`igov=0 A/V`²	Gain factor for Source/Drain overlap tunneling current.
47	`agidl=0 A/V`³	Gain factor for gate-induced leakage current.
48	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
49	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
50	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
51	`cox=2.98e-14(n)/2.72e-14(p) F`
		Oxide capacitance for the intrinsic channel (* mult).
52	`cgdo=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-drain overlap (* mult).
53	`cgso=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-source overlap (* mult).
54	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
55	`nt=1.62e-20 J`	Thermal noise coefficient.
56	`nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
57	`nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
58	`nfc=0(n)/3.63e-10(p) 1/V`
		Third coefficient of the flicker noise.
59	`tox=3.2e-09 m`	Thickness of gate oxide layer.
60	`dta=0 K`	Temperature offset of the device.
61	`rg=0` Ω	Gate resistance.
62	`rth=300 K/W`	Thermal resistance.
63	`cth=3e-09 J/K`	Thermal capacitance.
64	`ath=0`	Temperature coefficient of the thermal resistance.
65	`binning=0`	Flag for eldo model.
66	`type=n`	Transistor gender. Possible values are `n` and `p`.
67	`imax=1000 A`	Explosion current.
68	`tnom (C)`	Alias of tnom.
69	`tref (C)`	Alias of tnom.
70	`simkitver=3.4`
71	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`rg (`Ω`)`	Gate resistance.
37	`u`	Transistor gain (gm/gds).
38	`rout (`Ω`)`	Small-signal output resistance (1/gds).
39	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
40	`keff (``V )`	Body effect parameter.
41	`beff (A/V`²`)`	Gain factor.
42	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
43	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
44	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
45	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
46	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
47	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
48	`Pdiss (W)`	Dissipation.
49	`TK (K)`	Actual device temperature.
50	`table_ids (A)`	Current.
51	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
52	`table_qg (Coul)`	Charge at g node.
53	`table_qd (Coul)`	Charge at d node.
54	`table_qb (Coul)`	Charge at b node.
55	`pwr (W)`	Power.
56	`mos_region`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`
57	`diode_region`	DIODE region. Possible values are `off` and `on`.

Parameter Index

Pdiss OP-46	css OP-28	nfa M-63	thesat M-34
TK OP-47	cth M-71	nfb M-64	thesr M-22
a1 M-43	ctype OP-48	nfc M-65	theth M-36
a2 M-45	diode_region OP-57	nt M-62	tmin M-10
a3 M-46	dta M-67	nu M-28	tnom M-75
agidl M-54	etabet M-21	nuexp M-29	tox M-66
alp M-40	etamob M-26	paramchk M-2	tr M-13
ath M-72	etaph M-25	phib M-18	tref M-76
bacc M-50	etar M-31	printscaled I-2	trise I-3
beff OP-41	etasat M-35	pwr OP-55	type M-74
bet M-20	etasr M-23	region I-4	u OP-37
bgidl M-55	fknee OP-45	rg M-68	vballmsg M-9
binning M-73	fug OP-42	rg OP-36	vbdbhigh M-6
binv M-48	gatenoise M-61	rout OP-38	vbdblow M-5
cbb OP-33	gds OP-17	rth M-70	vbds M-4
cbd OP-30	gm OP-15	sdibl M-37	vbox M-3
cbg OP-31	gmb OP-16	sqrtsff OP-44	vbsbhigh M-8
cbs OP-32	iavl OP-2	sqrtsfw OP-43	vbsblow M-7
cdb OP-21	ids OP-1	ssf M-39	vds OP-6
cdd OP-18	igacc M-49	sta1 M-44	vdss OP-13
cdg OP-19	igb OP-5	stbgidl M-56	vearly OP-39
cds OP-20	igd OP-4	stetamob M-27	vfb M-14
cgb OP-25	iginv M-47	stop M-12	vfbov M-51
cgd OP-22	igov M-53	stphib M-19	vgs OP-7
cgdo M-59	igs OP-3	stvfb M-15	vgt OP-12
cgdol OP-34	keff OP-40	table_ids OP-50	von OP-49
cgg OP-23	ko M-16	table_qb OP-54	vp M-41
cgidl M-57	kov M-52	table_qd OP-53	vsat OP-14
cgs OP-24	kpinv M-17	table_qg OP-52	vsb OP-8
cgso M-60	level M-1	table_vth OP-51	vth OP-11
cgsol OP-35	m I-5	tdelay M-11	vto OP-9
compatible M-77	meff O-2	tempeff O-1	vts OP-10
cox M-58	mexp M-42	theph M-24	xpart M-69
csb OP-29	mo M-38	ther M-30
csd OP-26	mos_region OP-56	ther1 M-32
csg OP-27	mult I-1	ther2 M-33

MOS Model 11, Level 1102 (mos11020)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11020 parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
12	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
13	`kor=0.5` `V`	Body effect coefficient for the reference transistor.
14	`slko=0`	Coefficient of the length dependence of KO.
15	`sl2ko=0`	Second coefficient of the length dependence of KO.
16	`sl3ko=0`	Third coefficient of the length dependence of KO.
17	`sl3koexp=1`	Exponent belonging to the third coefficient of the length dependence of KO.
18	`swko=0`	Coefficient of the width dependence of KO.
19	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
20	`phibr=0.95 V`	Surface potential at strong inversion.
21	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
22	`slphib=0`	Coefficient of the length dependence of PHIB.
23	`sl2phib=0`	Second coefficient of the length dependence of PHIB.
24	`swphib=0`	Coefficient of the width dependence of PHIB.
25	`betsq=0.000371(n)/0.000115(p) A/V`²
		Gain factor for an infinite square transistor.
26	`etabetr=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
27	`sletabet=0`	Coefficient of length dependence of ETABETR.
28	`fbet1=0`	Relative mobility decrease due to first lateral profile.
29	`lp1=8e-07 m`	Characteristic length of first lateral profile.
30	`fbet2=0`	Relative mobility decrease due to second lateral profile.
31	`lp2=8e-07 m`	Characteristic length of second lateral profile.
32	`thesrr=0.4(n)/0.73(p) 1/V`
		Coefficient of the mobility reduction due to surface roughness scattering.
33	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
34	`swthesr=0`	Coefficient of the width dependence of THESR.
35	`thephr=0.0129(n)/0.001(p) 1/V`
		Coefficient of the mobility reduction due to phonon scattering.
36	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
37	`swtheph=0`	Coefficient of the width dependence of THEPH.
38	`etamobr=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion/inversion charge.
39	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
40	`swetamob=0`	Coefficient of the width dependence of ETAMOB.
41	`nu=2`	Exponent of field dependence of mobility model.
42	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
43	`therr=0.155(n)/0.08(p) 1/V`
		Coefficient of the series resistance.
44	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
45	`swther=0`	Coefficient of the width dependence of THER.
46	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
47	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
48	`thesatr=0.5(n)/0.2(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
49	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
50	`slthesat=1`	Coefficient of length dependence of THESAT.
51	`thesatexp=1`	Exponent of length dependence of THESAT.
52	`swthesat=0`	Coefficient of the width dependence of THESAT.
53	`thethr=0.001(n)/0.0005(p) 1/V`³
		Coefficient of self-heating.
54	`thethexp=1`	Exponent of the length dependence of THETH.
55	`swtheth=0`	Coefficient of the width dependence of THETH.
56	`sdiblo=0.0001 1/``V`
		Drain-induced barrier lowering parameter.
57	`sdiblexp=1.35`	Exponent of the length dependence of SDIBL.
58	`moo=0`	Parameter for short-channel subthreshold slope.
59	`mor=0`	Parameter for short-channel subthreshold slope per unit length.
60	`moexp=1.34`	Exponent of the length dependence of MO.
61	`ssfr=0.00625 1/``V`
		Static feedback parameter.
62	`slssf=1`	Coefficient of the length dependence of SSF.
63	`swssf=0`	Coefficient of the width dependence of SSF.
64	`alpr=0.01`	Factor of the channel length modulation.
65	`slalp=1`	Coefficient of the length dependence of ALP.
66	`alpexp=1`	Exponent of the length dependence of ALP.
67	`swalp=0`	Coefficient of the width dependence of ALP.
68	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
69	`lmin=1.5e-07 m`	Minimum effective channel length in technology, used for calculation of smoothing factor m.
70	`a1r=6`	Factor of the weak-avalanche current.
71	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
72	`sla1=0`	Coefficient of the length dependence of A1.
73	`swa1=0`	Coefficient of the width dependence of A1.
74	`a2r=38 V`	Exponent of the weak-avalanche current.
75	`sla2=0`	Coefficient of the length dependence of A2.
76	`swa2=0`	Coefficient of the width dependence of A2.
77	`a3r=1`	Factor of the drain-source voltage above which weak-avalanche occurs.
78	`sla3=0`	Coefficient of the length dependence of A3.
79	`swa3=0`	Coefficient of the width dependence of A3.
80	`iginvr=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
81	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
82	`igaccr=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
83	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
84	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
85	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
86	`igovr=0 A/V`²	Gain factor for Source/Drain overlap gate tunneling current.
87	`agidlr=0 A/V`³	Gain factor for gate-induced leakage current.
88	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
89	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
90	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
91	`tox=3.2e-09 m`	Thickness of gate oxide layer.
92	`col=3.2e-16 F`	Gate overlap capacitance for a channel width of 1 um.
93	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
94	`nt=1.62e-20 J`	Thermal noise coefficient.
95	`nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise for a channel area of 1 um^2.
96	`nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise for a channel area of 1 um^2.
97	`nfcr=0(n)/7.3e-08(p) 1/V`
		Third coefficient of the flicker noise for a channel area of 1 um^2.
98	`dta=0 K`	Temperature offset of the device.
99	`csr=0`	Factor of the Coulomb scattering.
100	`slcs=0`	Coefficient of the length dependence of CS.
101	`csexp=1`	Exponent of the length dependence of CS.
102	`swcs=0`	Coefficient of the width dependence of CS.
103	`etacs=0`	Exponent of the temperature dependence of CS.
104	`rgo=0` Ω	Gate resistance.
105	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
106	`rvpoly=0` Ω `m`²	Vertical poly resistance.
107	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
108	`dlsil=0 m`	Silicide extension over the physical gate length.
109	`scalelev=1.1e+04`	flag for eldo model.
110	`type=n`	Transistor gender. Possible values are `n` and `p`.
111	`imax=1000 A`	Explosion current.
112	`mbeo=0.0`	DCmatch parameter.
113	`mvto=0.0`	Threshold mismatch intercept.
114	`tnom (C)`	alias of tnom.
115	`tref (C)`	alias of tnom.
116	`simkitver=3.4`
117	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`table_ids (A)`	Current.
49	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
50	`table_qg (Coul)`	Charge at g node.
51	`table_qd (Coul)`	Charge at d node.
52	`table_qb (Coul)`	Charge at b node.
53	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
54	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
55	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
56	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

a1r M-77	fug OP-44	rint M-112	table_vth OP-49
a2r M-81	gatenoise M-100	rout OP-40	tdelay M-11
a3r M-84	gds OP-17	rshg M-114	tempeff O-1
agidlr M-94	gm OP-15	rvpoly M-113	thephr M-42
alpexp M-73	gmb OP-16	scalelev M-116	ther1 M-53
alpr M-71	iavl OP-2	sdiblexp M-64	ther2 M-54
bacc M-90	ids OP-1	sdiblo M-63	therr M-50
beff OP-43	igaccr M-89	sl2ko M-22	thesatexp M-58
betsq M-32	igb OP-5	sl2phib M-30	thesatr M-55
bgidl M-95	igd OP-4	sl3ko M-23	thesrr M-39
binv M-88	iginvr M-87	sl3koexp M-24	thethexp M-61
cbb OP-33	igovr M-93	sla1 M-79	thethr M-60
cbd OP-30	igs OP-3	sla2 M-82	tmin M-10
cbg OP-31	keff OP-42	sla3 M-85	tnom M-120
cbs OP-32	kor M-20	slalp M-72	tox M-98
cdb OP-21	kov M-92	slcs M-107	tr M-17
cdd OP-18	kpinv M-26	sletabet M-34	tref M-121
cdg OP-19	l I-2	slko M-21	trise I-8
cds OP-20	lap M-14	slphib M-29	type M-117
cgb OP-25	leff OP-37	slssf M-69	u OP-39
cgd OP-22	level M-1	slthesat M-57	vballmsg M-9
cgdol OP-34	lmin M-76	sqrtsff OP-46	vbdbhigh M-6
cgg OP-23	lp1 M-36	sqrtsfw OP-45	vbdblow M-5
cgidl M-97	lp2 M-38	ssfr M-68	vbds M-4
cgs OP-24	lvar M-13	sta1 M-78	vbox M-3
cgsol OP-35	m I-10	stbgidl M-96	vbsbhigh M-8
col M-99	mbeo M-118	stetamob M-46	vbsblow M-7
compatible M-122	meff O-2	stop M-12	vds OP-6
csb OP-29	moexp M-67	stphib M-28	vdss OP-13
csd OP-26	moo M-65	stvfb M-19	vearly OP-41
csexp M-108	mor M-66	swa1 M-80	vfb M-18
csg OP-27	mos_region OP-55	swa2 M-83	vfbov M-91
csr M-106	mult I-1	swa3 M-86	vgs OP-7
css OP-28	mvto M-119	swalp M-74	vgt OP-12
ctype OP-53	nf I-4	swcs M-109	von OP-54
diode_region OP-56	nfar M-102	swetamob M-47	vp M-75
dlsil M-115	nfbr M-103	swko M-25	vsat OP-14
dta M-105	nfcr M-104	swphib M-31	vsb OP-8
etabetr M-33	ngcon I-5	swssf M-70	vth OP-11
etacs M-110	nt M-101	swtheph M-44	vto OP-9
etamobr M-45	nu M-48	swther M-52	vts OP-10
etaph M-43	nuexp M-49	swthesat M-59	w I-3
etar M-51	paramchk M-2	swthesr M-41	weff OP-36
etasat M-56	phibr M-27	swtheth M-62	wot M-16
etasr M-40	printscaled I-7	table_ids OP-48	wvar M-15
fbet1 M-35	region I-9	table_qb OP-52	xgw I-6
fbet2 M-37	rg OP-38	table_qd OP-51
fknee OP-47	rgo M-111	table_qg OP-50

MOS Model 11, Level 1102 (mos11020t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	Alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11020t parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
12	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
13	`kor=0.5` `V`	Body effect coefficient for the reference transistor.
14	`slko=0`	Coefficient of the length dependence of KO.
15	`sl2ko=0`	Second coefficient of the length dependence of KO.
16	`sl3ko=0`	Third coefficient of the length dependence of KO.
17	`sl3koexp=1`	Exponent belonging to the third coefficient of the length dependence of KO.
18	`swko=0`	Coefficient of the width dependence of KO.
19	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
20	`phibr=0.95 V`	Surface potential at strong inversion.
21	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
22	`slphib=0`	Coefficient of the length dependence of PHIB.
23	`sl2phib=0`	Second coefficient of the length dependence of PHIB.
24	`swphib=0`	Coefficient of the width dependence of PHIB.
25	`betsq=0.000371(n)/0.000115(p) A/V`²
		Gain factor for an infinite square transistor.
26	`etabetr=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
27	`sletabet=0`	Coefficient of length dependence of ETABETR.
28	`fbet1=0`	Relative mobility decrease due to first lateral profile.
29	`lp1=8e-07 m`	Characteristic length of first lateral profile.
30	`fbet2=0`	Relative mobility decrease due to second lateral profile.
31	`lp2=8e-07 m`	Characteristic length of second lateral profile.
32	`thesrr=0.4(n)/0.73(p) 1/V`
		Coefficient of the mobility reduction due to surface roughness scattering.
33	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
34	`swthesr=0`	Coefficient of the width dependence of THESR.
35	`thephr=0.0129(n)/0.001(p) 1/V`
		Coefficient of the mobility reduction due to phonon scattering.
36	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
37	`swtheph=0`	Coefficient of the width dependence of THEPH.
38	`etamobr=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion/inversion charge.
39	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
40	`swetamob=0`	Coefficient of the width dependence of ETAMOB.
41	`nu=2`	Exponent of field dependence of mobility model.
42	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
43	`therr=0.155(n)/0.08(p) 1/V`
		Coefficient of the series resistance.
44	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
45	`swther=0`	Coefficient of the width dependence of THER.
46	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
47	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
48	`thesatr=0.5(n)/0.2(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
49	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
50	`slthesat=1`	Coefficient of length dependence of THESAT.
51	`thesatexp=1`	Exponent of length dependence of THESAT.
52	`swthesat=0`	Coefficient of the width dependence of THESAT.
53	`thethr=0.001(n)/0.0005(p) 1/V`³
		Coefficient of self-heating.
54	`thethexp=1`	Exponent of the length dependence of THETH.
55	`swtheth=0`	Coefficient of the width dependence of THETH.
56	`sdiblo=0.0001 1/``V`
		Drain-induced barrier lowering parameter.
57	`sdiblexp=1.35`	Exponent of the length dependence of SDIBL.
58	`moo=0`	Parameter for short-channel subthreshold slope.
59	`mor=0`	Parameter for short-channel subthreshold slope per unit length.
60	`moexp=1.34`	Exponent of the length dependence of MO.
61	`ssfr=0.00625 1/``V`
		Static feedback parameter.
62	`slssf=1`	Coefficient of the length dependence of SSF.
63	`swssf=0`	Coefficient of the width dependence of SSF.
64	`alpr=0.01`	Factor of the channel length modulation.
65	`slalp=1`	Coefficient of the length dependence of ALP.
66	`alpexp=1`	Exponent of the length dependence of ALP.
67	`swalp=0`	Coefficient of the width dependence of ALP.
68	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
69	`lmin=1.5e-07 m`	Minimum effective channel length in technology, used for calculation of smoothing factor m.
70	`a1r=6`	Factor of the weak-avalanche current.
71	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
72	`sla1=0`	Coefficient of the length dependence of A1.
73	`swa1=0`	Coefficient of the width dependence of A1.
74	`a2r=38 V`	Exponent of the weak-avalanche current.
75	`sla2=0`	Coefficient of the length dependence of A2.
76	`swa2=0`	Coefficient of the width dependence of A2.
77	`a3r=1`	Factor of the drain-source voltage above which weak-avalanche occurs.
78	`sla3=0`	Coefficient of the length dependence of A3.
79	`swa3=0`	Coefficient of the width dependence of A3.
80	`iginvr=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
81	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
82	`igaccr=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
83	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
84	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
85	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
86	`igovr=0 A/V`²	Gain factor for Source/Drain overlap gate tunneling current.
87	`agidlr=0 A/V`³	Gain factor for gate-induced leakage current.
88	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
89	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
90	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
91	`tox=3.2e-09 m`	Thickness of gate oxide layer.
92	`col=3.2e-16 F`	Gate overlap capacitance for a channel width of 1 um.
93	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
94	`nt=1.62e-20 J`	Thermal noise coefficient.
95	`nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise for a channel area of 1 um^2.
96	`nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise for a channel area of 1 um^2.
97	`nfcr=0(n)/7.3e-08(p) 1/V`
		Third coefficient of the flicker noise for a channel area of 1 um^2.
98	`dta=0 K`	Temperature offset of the device.
99	`csr=0`	Factor of the Coulomb scattering.
100	`slcs=0`	Coefficient of the length dependence of CS.
101	`csexp=1`	Exponent of the length dependence of CS.
102	`swcs=0`	Coefficient of the width dependence of CS.
103	`etacs=0`	Exponent of the temperature dependence of CS.
104	`rgo=0` Ω	Gate resistance.
105	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
106	`rvpoly=0` Ω `m`²	Vertical poly resistance.
107	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
108	`dlsil=0 m`	Silicide extension over the physical gate length.
109	`rth=300 K/W`	Thermal resistance.
110	`cth=3e-09 J/K`	Thermal capacitance.
111	`ath=0`	Temperature coefficient of the thermal resistance.
112	`scalelev=1.1e+04`	flag for eldo model.
113	`type=n`	Transistor gender. Possible values are `n` and `p`.
114	`imax=1000 A`	Explosion current.
115	`mbeo=0.0`	DCmatch parameter.
116	`mvto=0.0`	Threshold mismatch intercept.
117	`tnom (C)`	Alias of tnom.
118	`tref (C)`	Alias of tnom.
119	`simkitver=3.4`
120	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`Pdiss (W)`	Dissipation.
49	`TK (K)`	Actual device temperature.
50	`table_ids (A)`	Current.
51	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
52	`table_qg (Coul)`	Charge at g node.
53	`table_qd (Coul)`	Charge at d node.
54	`table_qb (Coul)`	Charge at b node.
55	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
56	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
57	`pwr (W)`	Power.
58	`mos_region`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`
59	`diode_region`	DIODE region. Possible values are `off` and `on`.

Parameter Index

Pdiss OP-48	fbet1 M-35	region I-9	table_qb OP-54
TK OP-49	fbet2 M-37	rg OP-38	table_qd OP-53
a1r M-77	fknee OP-47	rgo M-111	table_qg OP-52
a2r M-81	fug OP-44	rint M-112	table_vth OP-51
a3r M-84	gatenoise M-100	rout OP-40	tdelay M-11
agidlr M-94	gds OP-17	rshg M-114	tempeff O-1
alpexp M-73	gm OP-15	rth M-116	thephr M-42
alpr M-71	gmb OP-16	rvpoly M-113	ther1 M-53
ath M-118	iavl OP-2	scalelev M-119	ther2 M-54
bacc M-90	ids OP-1	sdiblexp M-64	therr M-50
beff OP-43	igaccr M-89	sdiblo M-63	thesatexp M-58
betsq M-32	igb OP-5	sl2ko M-22	thesatr M-55
bgidl M-95	igd OP-4	sl2phib M-30	thesrr M-39
binv M-88	iginvr M-87	sl3ko M-23	thethexp M-61
cbb OP-33	igovr M-93	sl3koexp M-24	thethr M-60
cbd OP-30	igs OP-3	sla1 M-79	tmin M-10
cbg OP-31	keff OP-42	sla2 M-82	tnom M-123
cbs OP-32	kor M-20	sla3 M-85	tox M-98
cdb OP-21	kov M-92	slalp M-72	tr M-17
cdd OP-18	kpinv M-26	slcs M-107	tref M-124
cdg OP-19	l I-2	sletabet M-34	trise I-8
cds OP-20	lap M-14	slko M-21	type M-120
cgb OP-25	leff OP-37	slphib M-29	u OP-39
cgd OP-22	level M-1	slssf M-69	vballmsg M-9
cgdol OP-34	lmin M-76	slthesat M-57	vbdbhigh M-6
cgg OP-23	lp1 M-36	sqrtsff OP-46	vbdblow M-5
cgidl M-97	lp2 M-38	sqrtsfw OP-45	vbds M-4
cgs OP-24	lvar M-13	ssfr M-68	vbox M-3
cgsol OP-35	m I-10	sta1 M-78	vbsbhigh M-8
col M-99	mbeo M-121	stbgidl M-96	vbsblow M-7
compatible M-125	meff O-2	stetamob M-46	vds OP-6
csb OP-29	moexp M-67	stop M-12	vdss OP-13
csd OP-26	moo M-65	stphib M-28	vearly OP-41
csexp M-108	mor M-66	stvfb M-19	vfb M-18
csg OP-27	mos_region OP-58	swa1 M-80	vfbov M-91
csr M-106	mult I-1	swa2 M-83	vgs OP-7
css OP-28	mvto M-122	swa3 M-86	vgt OP-12
cth M-117	nf I-4	swalp M-74	von OP-56
ctype OP-55	nfar M-102	swcs M-109	vp M-75
diode_region OP-59	nfbr M-103	swetamob M-47	vsat OP-14
dlsil M-115	nfcr M-104	swko M-25	vsb OP-8
dta M-105	ngcon I-5	swphib M-31	vth OP-11
etabetr M-33	nt M-101	swssf M-70	vto OP-9
etacs M-110	nu M-48	swtheph M-44	vts OP-10
etamobr M-45	nuexp M-49	swther M-52	w I-3
etaph M-43	paramchk M-2	swthesat M-59	weff OP-36
etar M-51	phibr M-27	swthesr M-41	wot M-16
etasat M-56	printscaled I-7	swtheth M-62	wvar M-15
etasr M-40	pwr OP-57	table_ids OP-50	xgw I-6

MOS Model 11, Level 1102 (mos11021)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11021 parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`lmin=0 m`	Device length low limit for binning selection.
12	`lmax=1 m`	Device length high limit for binning selection.
13	`wmin=0 m`	Device width low limit for binning selection.
14	`wmax=1 m`	Device width high limit for binning selection.
15	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
16	`poko=0.5` `V`	Coefficient for the geometry independent part of KO.
17	`plko=0` `V`	Coefficient for the length dependence of KO.
18	`pwko=0` `V`	Coefficient for the width dependence of KO.
19	`plwko=0` `V`	Coefficient for the length times width dependence of KO.
20	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
21	`pophib=0.95 V`	Coefficient for the geometric independent part of PHIB.
22	`plphib=0 V`	Coefficient for the length dependence of PHIB.
23	`pwphib=0 V`	Coefficient for the width dependence of PHIB.
24	`plwphib=0 V`	Coefficient for the length times width dependence of PHIB.
25	`pobet=0.00192(n)/0.000381(p) A/V`²
		Coefficient for the geometry independent part of BET.
26	`plbet=0 A/V`²	Coefficient for the length dependence of BET.
27	`pwbet=0 A/V`²	Coefficient for the width dependence of BET.
28	`plwbet=0 A/V`²	Coefficient for the width over length dependence of BET.
29	`pothesr=0.356(n)/0.73(p) 1/V`
		Coefficient of the geometry independent part of THESR.
30	`plthesr=0 1/V`	Coefficient of the length dependence of THESR.
31	`pwthesr=0 1/V`	Coefficient of the width dependence of THESR.
32	`plwthesr=0 1/V`	Coefficient of the length times width dependence of THESR.
33	`potheph=0.0129(n)/0.001(p) 1/V`
		Coefficient of the geometry independent part of THEPH.
34	`pltheph=0 1/V`	Coefficient of the length dependence of THEPH.
35	`pwtheph=0 1/V`	Coefficient of the width dependence of THEPH.
36	`plwtheph=0 1/V`	Coefficient of the length times width dependence of THEPH.
37	`poetamob=1.4(n)/3(p)`
		Coefficient of the geometry independent part of ETAMOB.
38	`pletamob=0`	Coefficient of the length dependence of ETAMOB.
39	`pwetamob=0`	Coefficient of the width dependence of ETAMOB.
40	`plwetamob=0`	Coefficient of the length times width dependence of ETAMOB.
41	`pother=0.0812(n)/0.079(p) 1/V`
		Coefficient of the geometry independent part of THER.
42	`plther=0 1/V`	Coefficient of the length dependence of THER.
43	`pwther=0 1/V`	Coefficient of the width dependence of THER.
44	`plwther=0 1/V`	Coefficient of the length times width dependence of THER.
45	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
46	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
47	`pothesat=0.251(n)/0.173(p) 1/V`
		Coefficient of the geometry independent part of THESAT.
48	`plthesat=0 1/V`	Coefficient of the length dependence of THESAT.
49	`pwthesat=0 1/V`	Coefficient of the width dependence of THESAT.
50	`plwthesat=0 1/V`	Coefficient of the length times width dependence of THESAT.
51	`potheth=1e-05(n)/0(p) 1/V`³
		Coefficient of the geometry independent part of THETH.
52	`pltheth=0 1/V`³	Coefficient of the length dependence of THETH.
53	`pwtheth=0 1/V`³	Coefficient of the width dependence of THETH.
54	`plwtheth=0 1/V`³	Coefficient of the length times width dependence of THETH.
55	`posdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Coefficient of the geometry independent part of SDIBL.
56	`plsdibl=0 1/``V`
		Coefficient of the length dependence of SDIBL.
57	`pwsdibl=0 1/``V`
		Coefficient of the width dependence of SDIBL.
58	`plwsdibl=0 1/``V`
		Coefficient of the length times width dependence of SDIBL.
59	`pomo=0`	Coefficient of the geometry independent part of MO.
60	`plmo=0`	Coefficient of the length dependence of MO.
61	`pwmo=0`	Coefficient of the width dependence of MO.
62	`plwmo=0`	Coefficient of the length times width dependence of MO.
63	`possf=0.012(n)/0.01(p) 1/``V`
		Coefficient of the geometry independent part of SSF.
64	`plssf=0 1/``V`	Coefficient of the length dependence of SSF.
65	`pwssf=0 1/``V`	Coefficient of the width dependence of SSF.
66	`plwssf=0 1/``V`
		Coefficient of the length times width dependence of SSF.
67	`poalp=0.025`	Coefficient of the geometry independent part of ALP.
68	`plalp=0`	Coefficient of the length dependence of ALP.
69	`pwalp=0`	Coefficient of the width dependence of ALP.
70	`plwalp=0`	Coefficient of the length times width dependence of ALP.
71	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
72	`pomexp=0.2`	Coefficient of the geometry independent part of MEXP.
73	`plmexp=0`	Coefficient of the length dependence of MEXP.
74	`pwmexp=0`	Coefficient of the width dependence of MEXP.
75	`plwmexp=0`	Coefficient of the length times width dependence of MEXP.
76	`poa1=6.02(n)/6.86(p)`
		Coefficient of the geometry independent part of A1.
77	`pla1=0`	Coefficient of the length dependence of A1.
78	`pwa1=0`	Coefficient of the width dependence of A1.
79	`plwa1=0`	Coefficient of the length times width dependence of A1.
80	`poa2=38(n)/57.3(p) V`
		Coefficient of the geometry independent part of A2.
81	`pla2=0 V`	Coefficient of the length dependence of A2.
82	`pwa2=0 V`	Coefficient of the width dependence of A2.
83	`plwa2=0 V`	Coefficient of the length times width dependence of A2.
84	`poa3=0.641(n)/0.425(p)`
		Coefficient of the geometry independent part of A3.
85	`pla3=0`	Coefficient of the length dependence of A3.
86	`pwa3=0`	Coefficient of the width dependence of A3.
87	`plwa3=0`	Coefficient of the length times width dependence of A3.
88	`poiginv=0 A/V`²	Coefficient of the geometry independent part of IGINV.
89	`pliginv=0 A/V`²	Coefficient of the length dependence of IGINV.
90	`pwiginv=0 A/V`²	Coefficient of the width dependence of IGINV.
91	`plwiginv=0 A/V`²	Coefficient of the length times width dependence of IGINV.
92	`pobinv=48(n)/87.5(p) V`
		Coefficient of the geometry independent part of BINV.
93	`plbinv=0 V`	Coefficient of the length dependence of BINV.
94	`pwbinv=0 V`	Coefficient of the width dependence of BINV.
95	`plwbinv=0 V`	Coefficient of the length times width dependence of BINV.
96	`poigacc=0 A/V`²	Coefficient of the geometry independent part of IGACC.
97	`pligacc=0 A/V`²	Coefficient of the length dependence of IGACC.
98	`pwigacc=0 A/V`²	Coefficient of the width dependence of IGACC.
99	`plwigacc=0 A/V`²	Coefficient of the length times width dependence of IGACC.
100	`pobacc=48 V`	Coefficient of the geometry independent part of BACC.
101	`plbacc=0 V`	Coefficient of the length dependence of BACC.
102	`pwbacc=0 V`	Coefficient of the width dependence of BACC.
103	`plwbacc=0 V`	Coefficient of the length times width dependence of BACC.
104	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
105	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
106	`poigov=0 A/V`²	Coefficient of the geometry independent part of IGOV.
107	`pligov=0 A/V`²	Coefficient of the length dependence of IGOV.
108	`pwigov=0 A/V`²	Coefficient of the width dependence of IGOV.
109	`plwigov=0 A/V`²	Coefficient of the length times width dependence of IGOV.
110	`poagidl=0 A/V`³	Coefficient of the geometry independent part of AGIDL.
111	`plagidl=0 A/V`³	Coefficient of the length dependence of AGIDL.
112	`pwagidl=0 A/V`³	Coefficient of the width dependence of AGIDL.
113	`plwagidl=0 A/V`³	Coefficient of the length times width dependence of AGIDL.
114	`pobgidl=41 V`	Coefficient of the geometry independent part of BGIDL.
115	`plbgidl=0 V`	Coefficient of the length dependence of BGIDL.
116	`pwbgidl=0 V`	Coefficient of the width dependence of BGIDL.
117	`plwbgidl=0 V`	Coefficient of the length times width dependence of BGIDL.
118	`pocgidl=0`	Coefficient of the geometry independent part of CGIDL.
119	`plcgidl=0`	Coefficient of the length dependence of CGIDL.
120	`pwcgidl=0`	Coefficient of the width dependence of CGIDL.
121	`plwcgidl=0`	Coefficient of the length times width dependence of CGIDL.
122	`tox=3.2e-09 m`	Thickness of gate oxide layer.
123	`pocox=2.98e-14(n)/2.72e-14(p) F`
		Coefficient of the geometry independent part of COX.
124	`plcox=0 F`	Coefficient of the length dependence of COX.
125	`pwcox=0 F`	Coefficient of the width dependence of COX.
126	`plwcox=0 F`	Coefficient of the length times width dependence of COX.
127	`pocgdo=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGDO.
128	`plcgdo=0 F`	Coefficient of the length dependence of CGDO.
129	`pwcgdo=0 F`	Coefficient of the width dependence of CGDO.
130	`plwcgdo=0 F`	Coefficient of the length time width dependence of CGDO.
131	`pocgso=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGSO.
132	`plcgso=0 F`	Coefficient of the length dependence of CGSO.
133	`pwcgso=0 F`	Coefficient of the width dependence of CGSO.
134	`plwcgso=0 F`	Coefficient of the length times width dependence of CGSO.
135	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
136	`nt=1.62e-20 J`	Thermal noise coefficient.
137	`ponfa=8.32e+22(n)/1.9e+22(p) 1/V m`⁴
		Coefficient of the geometry independent part of NFA.
138	`plnfa=0 1/V m`⁴	Coefficient of the length dependence of NFA.
139	`pwnfa=0 1/V m`⁴	Coefficient of the width dependence of NFA.
140	`plwnfa=0 1/V m`⁴	Coefficient of the length times width dependence of NFA.
141	`ponfb=2.51e+07(n)/5.04e+06(p) 1/V m`²
		Coefficient of the geometry independent part of NFB.
142	`plnfb=0 1/V m`²	Coefficient of the length dependence of NFB.
143	`pwnfb=0 1/V m`²	Coefficient of the width dependence of NFB.
144	`plwnfb=0 1/V m`²	Coefficient of the length times width dependence of NFB.
145	`ponfc=0(n)/3.63e-10(p) 1/V`
		Coefficient of the geometry independent part of NFC.
146	`plnfc=0 1/V`	Coefficient of the length dependence of NFC.
147	`pwnfc=0 1/V`	Coefficient of the width dependence of NFC.
148	`plwnfc=0 1/V`	Coefficient of the length times width dependence of NFC.
149	`potvfb=0.0005 V/K`	Coefficient of the geometry independent part of STVFB.
150	`pltvfb=0 V/K`	Coefficient of the length dependence of STVFB.
151	`pwtvfb=0 V/K`	Coefficient of the width dependence of STVFB.
152	`plwtvfb=0 V/K`	Coefficient of the length times width dependence of STVFB.
153	`potphib=-0.00085 V/K`
		Coefficient of the geometry independent part of STPHIB.
154	`pltphib=0 V/K`	Coefficient of the length dependence of STPHIB.
155	`pwtphib=0 V/K`	Coefficient of the width dependence of STPHIB.
156	`plwtphib=0 V/K`	Coefficient of the length times width dependence of STPHIB.
157	`potetabet=1.3(n)/0.5(p)`
		Coefficient of the geometry independent part of ETABET.
158	`pltetabet=0`	Coefficient of the length dependence of ETABET.
159	`pwtetabet=0`	Coefficient of the width dependence of ETABET.
160	`plwtetabet=0`	Coefficient of the length times width dependence of ETABET.
161	`potetasr=0.65(n)/0.5(p)`
		Coefficient of the geometry independent part of ETASR.
162	`pltetasr=0`	Coefficient of the length dependence of ETASR.
163	`pwtetasr=0`	Coefficient of the width dependence of ETASR.
164	`plwtetasr=0`	Coefficient of the length times width dependence of ETASR.
165	`potetaph=1.35(n)/3.75(p)`
		Coefficient of the geometry independent part of ETAPH.
166	`pltetaph=0`	Coefficient of the length dependence of ETAPH.
167	`pwtetaph=0`	Coefficient of the width dependence of ETAPH.
168	`plwtetaph=0`	Coefficient of the length times width dependence of ETAPH.
169	`potetamob=0 1/K`	Coefficient of the geometry independent part of STETAMOB.
170	`pltetamob=0 1/K`	Coefficient of the length dependence of STETAMOB.
171	`pwtetamob=0 1/K`	Coefficient of the width dependence of STETAMOB.
172	`plwtetamob=0 1/K`	Coefficient of the length times width dependence of STETAMOB.
173	`nu=2`	Exponent of field dependence of mobility model.
174	`potnuexp=5.25(n)/3.23(p)`
		Coefficient of the geometry independent part of NUEXP.
175	`pltnuexp=0`	Coefficient of the length dependence of NUEXP.
176	`pwtnuexp=0`	Coefficient of the width dependence of NUEXP.
177	`plwtnuexp=0`	Coefficient of the length times width dependence of NUEXP.
178	`potetar=0.95(n)/0.4(p)`
		Coefficient of the geometry independent part of ETAR.
179	`pltetar=0`	Coefficient of the length dependence of ETAR.
180	`pwtetar=0`	Coefficient of the width dependence of ETAR.
181	`plwtetar=0`	Coefficient of the length times width dependence of ETAR.
182	`potetasat=1.04(n)/0.86(p)`
		Coefficient of the geometry independent part of ETASAT.
183	`pltetasat=0`	Coefficient of the length dependence of ETASAT.
184	`pwtetasat=0`	Coefficient of the width dependence of ETASAT.
185	`plwtetasat=0`	Coefficient of the length times width dependence of ETASAT.
186	`pota1=0 1/K`	Coefficient of the geometry independent part of STA1.
187	`plta1=0 1/K`	Coefficient of the length dependence of STA1.
188	`pwta1=0 1/K`	Coefficient of the width dependence of STA1.
189	`plwta1=0 1/K`	Coefficient of the length times width dependence of STA1.
190	`potbgidl=-0.000364 V/K`
		Coefficient of the geometry independent part of STBGIDL.
191	`pltbgidl=0 V/K`	Coefficient of the length dependence of STBGIDL.
192	`pwtbgidl=0 V/K`	Coefficient of the width dependence of STBGIDL.
193	`plwtbgidl=0 V/K`	Coefficient of the length times width dependence of STBGIDL.
194	`dta=0 K`	Temperature offset of the device.
195	`pocs=0`	Coefficient of the geometry independent part of CS.
196	`plcs=0`	Coefficient of the length dependence of CS.
197	`pwcs=0`	Coefficient of the width dependence of CS.
198	`plwcs=0`	Coefficient of the length times width dependence of CS.
199	`potetacs=0`	Coefficient of the geometry independent part of ETACS.
200	`pltetacs=0`	Coefficient of the length dependence of ETACS.
201	`pwtetacs=0`	Coefficient of the width dependence of ETACS.
202	`plwtetacs=0`	Coefficient of the length times width dependence of ETACS.
203	`rgo=0` Ω	Gate resistance.
204	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
205	`rvpoly=0` Ω `m`²	Vertical poly resistance.
206	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
207	`dlsil=0 m`	Silicide extension over the physical gate length.
208	`scalelev=1.1e+04`	flag for eldo model.
209	`type=n`	Transistor gender. Possible values are `n` and `p`.
210	`imax=1000 A`	Explosion current.
211	`mbeo=0.0`	DCmatch parameter.
212	`mvto=0.0`	Threshold mismatch intercept.
213	`tnom (C)`	Alias of tnom.
214	`tref (C)`	Alias of tnom.
215	`simkitver=3.4`
216	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`table_ids (A)`	Current.
49	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
50	`table_qg (Coul)`	Charge at g node.
51	`table_qd (Coul)`	Charge at d node.
52	`table_qb (Coul)`	Charge at b node.
53	`BET (A/V`²`)`	Gain factor.
54	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
55	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
56	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
57	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

BET OP-53	pliginv M-96	poa2 M-87	pwtetabet M-166
beff OP-43	pligov M-114	poa3 M-91	pwtetacs M-208
cbb OP-33	plko M-24	poagidl M-117	pwtetamob M-178
cbd OP-30	plmexp M-80	poalp M-74	pwtetaph M-174
cbg OP-31	plmo M-67	pobacc M-107	pwtetar M-187
cbs OP-32	plnfa M-145	pobet M-32	pwtetasat M-191
cdb OP-21	plnfb M-149	pobgidl M-121	pwtetasr M-170
cdd OP-18	plnfc M-153	pobinv M-99	pwtheph M-42
cdg OP-19	plphib M-29	pocgdo M-134	pwther M-50
cds OP-20	plsdibl M-63	pocgidl M-125	pwthesat M-56
cgb OP-25	plssf M-71	pocgso M-138	pwthesr M-38
cgd OP-22	plta1 M-194	pocox M-130	pwtheth M-60
cgdol OP-34	pltbgidl M-198	pocs M-202	pwtnuexp M-183
cgg OP-23	pltetabet M-165	poetamob M-44	pwtphib M-162
cgs OP-24	pltetacs M-207	poigacc M-103	pwtvfb M-158
cgsol OP-35	pltetamob M-177	poiginv M-95	region I-9
compatible M-221	pltetaph M-173	poigov M-113	rg OP-38
csb OP-29	pltetar M-186	poko M-23	rgo M-210
csd OP-26	pltetasat M-190	pomexp M-79	rint M-211
csg OP-27	pltetasr M-169	pomo M-66	rout OP-40
css OP-28	pltheph M-41	ponfa M-144	rshg M-213
ctype OP-54	plther M-49	ponfb M-148	rvpoly M-212
diode_region OP-57	plthesat M-55	ponfc M-152	scalelev M-215
dlsil M-214	plthesr M-37	pophib M-28	sqrtsff OP-46
dta M-201	pltheth M-59	posdibl M-62	sqrtsfw OP-45
fknee OP-47	pltnuexp M-182	possf M-70	stop M-12
fug OP-44	pltphib M-161	pota1 M-193	table_ids OP-48
gatenoise M-142	pltvfb M-157	potbgidl M-197	table_qb OP-52
gds OP-17	plwa1 M-86	potetabet M-164	table_qd OP-51
gm OP-15	plwa2 M-90	potetacs M-206	table_qg OP-50
gmb OP-16	plwa3 M-94	potetamob M-176	table_vth OP-49
iavl OP-2	plwagidl M-120	potetaph M-172	tdelay M-11
ids OP-1	plwalp M-77	potetar M-185	tempeff O-1
igb OP-5	plwbacc M-110	potetasat M-189	ther1 M-52
igd OP-4	plwbet M-35	potetasr M-168	ther2 M-53
igs OP-3	plwbgidl M-124	potheph M-40	tmin M-10
keff OP-42	plwbinv M-102	pother M-48	tnom M-219
kov M-112	plwcgdo M-137	pothesat M-54	tox M-129
kpinv M-27	plwcgidl M-128	pothesr M-36	tr M-17
l I-2	plwcgso M-141	potheth M-58	tref M-220
lap M-14	plwcox M-133	potnuexp M-181	trise I-8
leff OP-37	plwcs M-205	potphib M-160	type M-216
level M-1	plwetamob M-47	potvfb M-156	u OP-39
lmax M-19	plwigacc M-106	printscaled I-7	vballmsg M-9
lmin M-18	plwiginv M-98	pwa1 M-85	vbdbhigh M-6
lvar M-13	plwigov M-116	pwa2 M-89	vbdblow M-5
m I-10	plwko M-26	pwa3 M-93	vbds M-4
mbeo M-217	plwmexp M-82	pwagidl M-119	vbox M-3
meff O-2	plwmo M-69	pwalp M-76	vbsbhigh M-8
mos_region OP-56	plwnfa M-147	pwbacc M-109	vbsblow M-7
mult I-1	plwnfb M-151	pwbet M-34	vds OP-6
mvto M-218	plwnfc M-155	pwbgidl M-123	vdss OP-13
nf I-4	plwphib M-31	pwbinv M-101	vearly OP-41
ngcon I-5	plwsdibl M-65	pwcgdo M-136	vfb M-22
nt M-143	plwssf M-73	pwcgidl M-127	vfbov M-111
nu M-180	plwta1 M-196	pwcgso M-140	vgs OP-7
paramchk M-2	plwtbgidl M-200	pwcox M-132	vgt OP-12
pla1 M-84	plwtetabet M-167	pwcs M-204	von OP-55
pla2 M-88	plwtetacs M-209	pwetamob M-46	vp M-78
pla3 M-92	plwtetamob M-179	pwigacc M-105	vsat OP-14
plagidl M-118	plwtetaph M-175	pwiginv M-97	vsb OP-8
plalp M-75	plwtetar M-188	pwigov M-115	vth OP-11
plbacc M-108	plwtetasat M-192	pwko M-25	vto OP-9
plbet M-33	plwtetasr M-171	pwmexp M-81	vts OP-10
plbgidl M-122	plwtheph M-43	pwmo M-68	w I-3
plbinv M-100	plwther M-51	pwnfa M-146	weff OP-36
plcgdo M-135	plwthesat M-57	pwnfb M-150	wmax M-21
plcgidl M-126	plwthesr M-39	pwnfc M-154	wmin M-20
plcgso M-139	plwtheth M-61	pwphib M-30	wot M-16
plcox M-131	plwtnuexp M-184	pwsdibl M-64	wvar M-15
plcs M-203	plwtphib M-163	pwssf M-72	xgw I-6
pletamob M-45	plwtvfb M-159	pwta1 M-195
pligacc M-104	poa1 M-83	pwtbgidl M-199

MOS Model 11, Level 1102 (mos11021t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`l=2e-06 m`	Drawn channel length in the layout. Scale set by option scale.
3	`w=1e-05 m`	Drawn channel width in the layout. Scale set by option scale.
4	`nf=1`	Number of fingers.
5	`ngcon=1`	Number of gate contacts.
6	`xgw=1e-07 m`	Distance from the gate contact to the channel edge.
7	`printscaled=0`	Print scaled parameter info if value not equal to zero.
8	`trise=0 K`	Difference between the local ambient and global ambient temperature.
9	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
10	`m=1`	Alias of mult.
11	`mos_region=SUBTHRESHOLD`
12	`diode_region=ON`

Model Definition

model modelName mos11021t parameter=value ...

Model Parameters

1	`level=1.1e+04`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`lvar=0 m`	Difference between the actual and the programmed poly-silicon gate length.
7	`lap=4e-08 m`	Effective channel length reduction per side.
8	`wvar=0 m`	Difference between the actual and the programmed field-oxide opening.
9	`wot=0 m`	Effective channel width reduction per side.
10	`tr=21 C`	Reference temperature.
11	`lmin=0 m`	Device length low limit for binning selection.
12	`lmax=1 m`	Device length high limit for binning selection.
13	`wmin=0 m`	Device width low limit for binning selection.
14	`wmax=1 m`	Device width high limit for binning selection.
15	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
16	`poko=0.5` `V`	Coefficient for the geometry independent part of KO.
17	`plko=0` `V`	Coefficient for the length dependence of KO.
18	`pwko=0` `V`	Coefficient for the width dependence of KO.
19	`plwko=0` `V`	Coefficient for the length times width dependence of KO.
20	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
21	`pophib=0.95 V`	Coefficient for the geometric independent part of PHIB.
22	`plphib=0 V`	Coefficient for the length dependence of PHIB.
23	`pwphib=0 V`	Coefficient for the width dependence of PHIB.
24	`plwphib=0 V`	Coefficient for the length times width dependence of PHIB.
25	`pobet=0.00192(n)/0.000381(p) A/V`²
		Coefficient for the geometry independent part of BET.
26	`plbet=0 A/V`²	Coefficient for the length dependence of BET.
27	`pwbet=0 A/V`²	Coefficient for the width dependence of BET.
28	`plwbet=0 A/V`²	Coefficient for the width over length dependence of BET.
29	`pothesr=0.356(n)/0.73(p) 1/V`
		Coefficient of the geometry independent part of THESR.
30	`plthesr=0 1/V`	Coefficient of the length dependence of THESR.
31	`pwthesr=0 1/V`	Coefficient of the width dependence of THESR.
32	`plwthesr=0 1/V`	Coefficient of the length times width dependence of THESR.
33	`potheph=0.0129(n)/0.001(p) 1/V`
		Coefficient of the geometry independent part of THEPH.
34	`pltheph=0 1/V`	Coefficient of the length dependence of THEPH.
35	`pwtheph=0 1/V`	Coefficient of the width dependence of THEPH.
36	`plwtheph=0 1/V`	Coefficient of the length times width dependence of THEPH.
37	`poetamob=1.4(n)/3(p)`
		Coefficient of the geometry independent part of ETAMOB.
38	`pletamob=0`	Coefficient of the length dependence of ETAMOB.
39	`pwetamob=0`	Coefficient of the width dependence of ETAMOB.
40	`plwetamob=0`	Coefficient of the length times width dependence of ETAMOB.
41	`pother=0.0812(n)/0.079(p) 1/V`
		Coefficient of the geometry independent part of THER.
42	`plther=0 1/V`	Coefficient of the length dependence of THER.
43	`pwther=0 1/V`	Coefficient of the width dependence of THER.
44	`plwther=0 1/V`	Coefficient of the length times width dependence of THER.
45	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
46	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
47	`pothesat=0.251(n)/0.173(p) 1/V`
		Coefficient of the geometry independent part of THESAT.
48	`plthesat=0 1/V`	Coefficient of the length dependence of THESAT.
49	`pwthesat=0 1/V`	Coefficient of the width dependence of THESAT.
50	`plwthesat=0 1/V`	Coefficient of the length times width dependence of THESAT.
51	`potheth=1e-05(n)/0(p) 1/V`³
		Coefficient of the geometry independent part of THETH.
52	`pltheth=0 1/V`³	Coefficient of the length dependence of THETH.
53	`pwtheth=0 1/V`³	Coefficient of the width dependence of THETH.
54	`plwtheth=0 1/V`³	Coefficient of the length times width dependence of THETH.
55	`posdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Coefficient of the geometry independent part of SDIBL.
56	`plsdibl=0 1/``V`
		Coefficient of the length dependence of SDIBL.
57	`pwsdibl=0 1/``V`
		Coefficient of the width dependence of SDIBL.
58	`plwsdibl=0 1/``V`
		Coefficient of the length times width dependence of SDIBL.
59	`pomo=0`	Coefficient of the geometry independent part of MO.
60	`plmo=0`	Coefficient of the length dependence of MO.
61	`pwmo=0`	Coefficient of the width dependence of MO.
62	`plwmo=0`	Coefficient of the length times width dependence of MO.
63	`possf=0.012(n)/0.01(p) 1/``V`
		Coefficient of the geometry independent part of SSF.
64	`plssf=0 1/``V`	Coefficient of the length dependence of SSF.
65	`pwssf=0 1/``V`	Coefficient of the width dependence of SSF.
66	`plwssf=0 1/``V`
		Coefficient of the length times width dependence of SSF.
67	`poalp=0.025`	Coefficient of the geometry independent part of ALP.
68	`plalp=0`	Coefficient of the length dependence of ALP.
69	`pwalp=0`	Coefficient of the width dependence of ALP.
70	`plwalp=0`	Coefficient of the length times width dependence of ALP.
71	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
72	`pomexp=0.2`	Coefficient of the geometry independent part of MEXP.
73	`plmexp=0`	Coefficient of the length dependence of MEXP.
74	`pwmexp=0`	Coefficient of the width dependence of MEXP.
75	`plwmexp=0`	Coefficient of the length times width dependence of MEXP.
76	`poa1=6.02(n)/6.86(p)`
		Coefficient of the geometry independent part of A1.
77	`pla1=0`	Coefficient of the length dependence of A1.
78	`pwa1=0`	Coefficient of the width dependence of A1.
79	`plwa1=0`	Coefficient of the length times width dependence of A1.
80	`poa2=38(n)/57.3(p) V`
		Coefficient of the geometry independent part of A2.
81	`pla2=0 V`	Coefficient of the length dependence of A2.
82	`pwa2=0 V`	Coefficient of the width dependence of A2.
83	`plwa2=0 V`	Coefficient of the length times width dependence of A2.
84	`poa3=0.641(n)/0.425(p)`
		Coefficient of the geometry independent part of A3.
85	`pla3=0`	Coefficient of the length dependence of A3.
86	`pwa3=0`	Coefficient of the width dependence of A3.
87	`plwa3=0`	Coefficient of the length times width dependence of A3.
88	`poiginv=0 A/V`²	Coefficient of the geometry independent part of IGINV.
89	`pliginv=0 A/V`²	Coefficient of the length dependence of IGINV.
90	`pwiginv=0 A/V`²	Coefficient of the width dependence of IGINV.
91	`plwiginv=0 A/V`²	Coefficient of the length times width dependence of IGINV.
92	`pobinv=48(n)/87.5(p) V`
		Coefficient of the geometry independent part of BINV.
93	`plbinv=0 V`	Coefficient of the length dependence of BINV.
94	`pwbinv=0 V`	Coefficient of the width dependence of BINV.
95	`plwbinv=0 V`	Coefficient of the length times width dependence of BINV.
96	`poigacc=0 A/V`²	Coefficient of the geometry independent part of IGACC.
97	`pligacc=0 A/V`²	Coefficient of the length dependence of IGACC.
98	`pwigacc=0 A/V`²	Coefficient of the width dependence of IGACC.
99	`plwigacc=0 A/V`²	Coefficient of the length times width dependence of IGACC.
100	`pobacc=48 V`	Coefficient of the geometry independent part of BACC.
101	`plbacc=0 V`	Coefficient of the length dependence of BACC.
102	`pwbacc=0 V`	Coefficient of the width dependence of BACC.
103	`plwbacc=0 V`	Coefficient of the length times width dependence of BACC.
104	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
105	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
106	`poigov=0 A/V`²	Coefficient of the geometry independent part of IGOV.
107	`pligov=0 A/V`²	Coefficient of the length dependence of IGOV.
108	`pwigov=0 A/V`²	Coefficient of the width dependence of IGOV.
109	`plwigov=0 A/V`²	Coefficient of the length times width dependence of IGOV.
110	`poagidl=0 A/V`³	Coefficient of the geometry independent part of AGIDL.
111	`plagidl=0 A/V`³	Coefficient of the length dependence of AGIDL.
112	`pwagidl=0 A/V`³	Coefficient of the width dependence of AGIDL.
113	`plwagidl=0 A/V`³	Coefficient of the length times width dependence of AGIDL.
114	`pobgidl=41 V`	Coefficient of the geometry independent part of BGIDL.
115	`plbgidl=0 V`	Coefficient of the length dependence of BGIDL.
116	`pwbgidl=0 V`	Coefficient of the width dependence of BGIDL.
117	`plwbgidl=0 V`	Coefficient of the length times width dependence of BGIDL.
118	`pocgidl=0`	Coefficient of the geometry independent part of CGIDL.
119	`plcgidl=0`	Coefficient of the length dependence of CGIDL.
120	`pwcgidl=0`	Coefficient of the width dependence of CGIDL.
121	`plwcgidl=0`	Coefficient of the length times width dependence of CGIDL.
122	`tox=3.2e-09 m`	Thickness of gate oxide layer.
123	`pocox=2.98e-14(n)/2.72e-14(p) F`
		Coefficient of the geometry independent part of COX.
124	`plcox=0 F`	Coefficient of the length dependence of COX.
125	`pwcox=0 F`	Coefficient of the width dependence of COX.
126	`plwcox=0 F`	Coefficient of the length times width dependence of COX.
127	`pocgdo=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGDO.
128	`plcgdo=0 F`	Coefficient of the length dependence of CGDO.
129	`pwcgdo=0 F`	Coefficient of the width dependence of CGDO.
130	`plwcgdo=0 F`	Coefficient of the length time width dependence of CGDO.
131	`pocgso=6.39e-15(n)/6.36e-15(p) F`
		Coefficient of the geometry independent part of CGSO.
132	`plcgso=0 F`	Coefficient of the length dependence of CGSO.
133	`pwcgso=0 F`	Coefficient of the width dependence of CGSO.
134	`plwcgso=0 F`	Coefficient of the length times width dependence of CGSO.
135	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
136	`nt=1.62e-20 J`	Thermal noise coefficient.
137	`ponfa=8.32e+22(n)/1.9e+22(p) 1/V m`⁴
		Coefficient of the geometry independent part of NFA.
138	`plnfa=0 1/V m`⁴	Coefficient of the length dependence of NFA.
139	`pwnfa=0 1/V m`⁴	Coefficient of the width dependence of NFA.
140	`plwnfa=0 1/V m`⁴	Coefficient of the length times width dependence of NFA.
141	`ponfb=2.51e+07(n)/5.04e+06(p) 1/V m`²
		Coefficient of the geometry independent part of NFB.
142	`plnfb=0 1/V m`²	Coefficient of the length dependence of NFB.
143	`pwnfb=0 1/V m`²	Coefficient of the width dependence of NFB.
144	`plwnfb=0 1/V m`²	Coefficient of the length times width dependence of NFB.
145	`ponfc=0(n)/3.63e-10(p) 1/V`
		Coefficient of the geometry independent part of NFC.
146	`plnfc=0 1/V`	Coefficient of the length dependence of NFC.
147	`pwnfc=0 1/V`	Coefficient of the width dependence of NFC.
148	`plwnfc=0 1/V`	Coefficient of the length times width dependence of NFC.
149	`potvfb=0.0005 V/K`	Coefficient of the geometry independent part of STVFB.
150	`pltvfb=0 V/K`	Coefficient of the length dependence of STVFB.
151	`pwtvfb=0 V/K`	Coefficient of the width dependence of STVFB.
152	`plwtvfb=0 V/K`	Coefficient of the length times width dependence of STVFB.
153	`potphib=-0.00085 V/K`
		Coefficient of the geometry independent part of STPHIB.
154	`pltphib=0 V/K`	Coefficient of the length dependence of STPHIB.
155	`pwtphib=0 V/K`	Coefficient of the width dependence of STPHIB.
156	`plwtphib=0 V/K`	Coefficient of the length times width dependence of STPHIB.
157	`potetabet=1.3(n)/0.5(p)`
		Coefficient of the geometry independent part of ETABET.
158	`pltetabet=0`	Coefficient of the length dependence of ETABET.
159	`pwtetabet=0`	Coefficient of the width dependence of ETABET.
160	`plwtetabet=0`	Coefficient of the length times width dependence of ETABET.
161	`potetasr=0.65(n)/0.5(p)`
		Coefficient of the geometry independent part of ETASR.
162	`pltetasr=0`	Coefficient of the length dependence of ETASR.
163	`pwtetasr=0`	Coefficient of the width dependence of ETASR.
164	`plwtetasr=0`	Coefficient of the length times width dependence of ETASR.
165	`potetaph=1.35(n)/3.75(p)`
		Coefficient of the geometry independent part of ETAPH.
166	`pltetaph=0`	Coefficient of the length dependence of ETAPH.
167	`pwtetaph=0`	Coefficient of the width dependence of ETAPH.
168	`plwtetaph=0`	Coefficient of the length times width dependence of ETAPH.
169	`potetamob=0 1/K`	Coefficient of the geometry independent part of STETAMOB.
170	`pltetamob=0 1/K`	Coefficient of the length dependence of STETAMOB.
171	`pwtetamob=0 1/K`	Coefficient of the width dependence of STETAMOB.
172	`plwtetamob=0 1/K`	Coefficient of the length times width dependence of STETAMOB.
173	`nu=2`	Exponent of field dependence of mobility model.
174	`potnuexp=5.25(n)/3.23(p)`
		Coefficient of the geometry independent part of NUEXP.
175	`pltnuexp=0`	Coefficient of the length dependence of NUEXP.
176	`pwtnuexp=0`	Coefficient of the width dependence of NUEXP.
177	`plwtnuexp=0`	Coefficient of the length times width dependence of NUEXP.
178	`potetar=0.95(n)/0.4(p)`
		Coefficient of the geometry independent part of ETAR.
179	`pltetar=0`	Coefficient of the length dependence of ETAR.
180	`pwtetar=0`	Coefficient of the width dependence of ETAR.
181	`plwtetar=0`	Coefficient of the length times width dependence of ETAR.
182	`potetasat=1.04(n)/0.86(p)`
		Coefficient of the geometry independent part of ETASAT.
183	`pltetasat=0`	Coefficient of the length dependence of ETASAT.
184	`pwtetasat=0`	Coefficient of the width dependence of ETASAT.
185	`plwtetasat=0`	Coefficient of the length times width dependence of ETASAT.
186	`pota1=0 1/K`	Coefficient of the geometry independent part of STA1.
187	`plta1=0 1/K`	Coefficient of the length dependence of STA1.
188	`pwta1=0 1/K`	Coefficient of the width dependence of STA1.
189	`plwta1=0 1/K`	Coefficient of the length times width dependence of STA1.
190	`potbgidl=-0.000364 V/K`
		Coefficient of the geometry independent part of STBGIDL.
191	`pltbgidl=0 V/K`	Coefficient of the length dependence of STBGIDL.
192	`pwtbgidl=0 V/K`	Coefficient of the width dependence of STBGIDL.
193	`plwtbgidl=0 V/K`	Coefficient of the length times width dependence of STBGIDL.
194	`dta=0 K`	Temperature offset of the device.
195	`pocs=0`	Coefficient of the geometry independent part of CS.
196	`plcs=0`	Coefficient of the length dependence of CS.
197	`pwcs=0`	Coefficient of the width dependence of CS.
198	`plwcs=0`	Coefficient of the length times width dependence of CS.
199	`potetacs=0`	Coefficient of the geometry independent part of ETACS.
200	`pltetacs=0`	Coefficient of the length dependence of ETACS.
201	`pwtetacs=0`	Coefficient of the width dependence of ETACS.
202	`plwtetacs=0`	Coefficient of the length times width dependence of ETACS.
203	`rgo=0` Ω	Gate resistance.
204	`rint=0` Ω `m`²	Contact resistance between silicide and poly.
205	`rvpoly=0` Ω `m`²	Vertical poly resistance.
206	`rshg=0` Ω`/Sqr`	Gate electrode diffusion sheet resistance.
207	`dlsil=0 m`	Silicide extension over the physical gate length.
208	`rth=300 K/W`	Thermal resistance.
209	`cth=3e-09 J/K`	Thermal capacitance.
210	`ath=0`	Temperature coefficient of the thermal resistance.
211	`scalelev=1.1e+04`	flag for eldo model.
212	`type=n`	Transistor gender. Possible values are `n` and `p`.
213	`imax=1000 A`	Explosion current.
214	`mbeo=0.0`	DCmatch parameter.
215	`mvto=0.0`	Threshold mismatch intercept.
216	`tnom (C)`	Alias of tnom.
217	`tref (C)`	Alias of tnom.
218	`simkitver=3.4`
219	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`weff (m)`	Effective channel width for geometrical models.
37	`leff (m)`	Effective channel length for geometrical models.
38	`rg (`Ω`)`	Gate resistance.
39	`u`	Transistor gain (gm/gds).
40	`rout (`Ω`)`	Small-signal output resistance (1/gds).
41	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
42	`keff (``V )`	Body effect parameter.
43	`beff (A/V`²`)`	Gain factor.
44	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
45	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
46	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
47	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
48	`Pdiss (W)`	Dissipation.
49	`TK (K)`	Actual device temperature.
50	`table_ids (A)`	Current.
51	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
52	`table_qg (Coul)`	Charge at g node.
53	`table_qd (Coul)`	Charge at d node.
54	`table_qb (Coul)`	Charge at b node.
55	`BET (A/V`²`)`	Gain factor.
56	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
57	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
58	`pwr (W)`	Power.
59	`mos_region`	MOS region. Possible values are `off`, `sat`, `triode`, and `subth`
60	`diode_region`	DIODE region. Possible values are `off` and `on`.

Parameter Index

BET OP-55	plcs M-203	plwtvfb M-159	pwta1 M-195
Pdiss OP-48	pletamob M-45	poa1 M-83	pwtbgidl M-199
TK OP-49	pligacc M-104	poa2 M-87	pwtetabet M-166
ath M-217	pliginv M-96	poa3 M-91	pwtetacs M-208
beff OP-43	pligov M-114	poagidl M-117	pwtetamob M-178
cbb OP-33	plko M-24	poalp M-74	pwtetaph M-174
cbd OP-30	plmexp M-80	pobacc M-107	pwtetar M-187
cbg OP-31	plmo M-67	pobet M-32	pwtetasat M-191
cbs OP-32	plnfa M-145	pobgidl M-121	pwtetasr M-170
cdb OP-21	plnfb M-149	pobinv M-99	pwtheph M-42
cdd OP-18	plnfc M-153	pocgdo M-134	pwther M-50
cdg OP-19	plphib M-29	pocgidl M-125	pwthesat M-56
cds OP-20	plsdibl M-63	pocgso M-138	pwthesr M-38
cgb OP-25	plssf M-71	pocox M-130	pwtheth M-60
cgd OP-22	plta1 M-194	pocs M-202	pwtnuexp M-183
cgdol OP-34	pltbgidl M-198	poetamob M-44	pwtphib M-162
cgg OP-23	pltetabet M-165	poigacc M-103	pwtvfb M-158
cgs OP-24	pltetacs M-207	poiginv M-95	region I-9
cgsol OP-35	pltetamob M-177	poigov M-113	rg OP-38
compatible M-224	pltetaph M-173	poko M-23	rgo M-210
csb OP-29	pltetar M-186	pomexp M-79	rint M-211
csd OP-26	pltetasat M-190	pomo M-66	rout OP-40
csg OP-27	pltetasr M-169	ponfa M-144	rshg M-213
css OP-28	pltheph M-41	ponfb M-148	rth M-215
cth M-216	plther M-49	ponfc M-152	rvpoly M-212
ctype OP-56	plthesat M-55	pophib M-28	scalelev M-218
diode_region OP-60	plthesr M-37	posdibl M-62	sqrtsff OP-46
dlsil M-214	pltheth M-59	possf M-70	sqrtsfw OP-45
dta M-201	pltnuexp M-182	pota1 M-193	stop M-12
fknee OP-47	pltphib M-161	potbgidl M-197	table_ids OP-50
fug OP-44	pltvfb M-157	potetabet M-164	table_qb OP-54
gatenoise M-142	plwa1 M-86	potetacs M-206	table_qd OP-53
gds OP-17	plwa2 M-90	potetamob M-176	table_qg OP-52
gm OP-15	plwa3 M-94	potetaph M-172	table_vth OP-51
gmb OP-16	plwagidl M-120	potetar M-185	tdelay M-11
iavl OP-2	plwalp M-77	potetasat M-189	tempeff O-1
ids OP-1	plwbacc M-110	potetasr M-168	ther1 M-52
igb OP-5	plwbet M-35	potheph M-40	ther2 M-53
igd OP-4	plwbgidl M-124	pother M-48	tmin M-10
igs OP-3	plwbinv M-102	pothesat M-54	tnom M-222
keff OP-42	plwcgdo M-137	pothesr M-36	tox M-129
kov M-112	plwcgidl M-128	potheth M-58	tr M-17
kpinv M-27	plwcgso M-141	potnuexp M-181	tref M-223
l I-2	plwcox M-133	potphib M-160	trise I-8
lap M-14	plwcs M-205	potvfb M-156	type M-219
leff OP-37	plwetamob M-47	printscaled I-7	u OP-39
level M-1	plwigacc M-106	pwa1 M-85	vballmsg M-9
lmax M-19	plwiginv M-98	pwa2 M-89	vbdbhigh M-6
lmin M-18	plwigov M-116	pwa3 M-93	vbdblow M-5
lvar M-13	plwko M-26	pwagidl M-119	vbds M-4
m I-10	plwmexp M-82	pwalp M-76	vbox M-3
mbeo M-220	plwmo M-69	pwbacc M-109	vbsbhigh M-8
meff O-2	plwnfa M-147	pwbet M-34	vbsblow M-7
mos_region OP-59	plwnfb M-151	pwbgidl M-123	vds OP-6
mult I-1	plwnfc M-155	pwbinv M-101	vdss OP-13
mvto M-221	plwphib M-31	pwcgdo M-136	vearly OP-41
nf I-4	plwsdibl M-65	pwcgidl M-127	vfb M-22
ngcon I-5	plwssf M-73	pwcgso M-140	vfbov M-111
nt M-143	plwta1 M-196	pwcox M-132	vgs OP-7
nu M-180	plwtbgidl M-200	pwcs M-204	vgt OP-12
paramchk M-2	plwtetabet M-167	pwetamob M-46	von OP-57
pla1 M-84	plwtetacs M-209	pwigacc M-105	vp M-78
pla2 M-88	plwtetamob M-179	pwiginv M-97	vsat OP-14
pla3 M-92	plwtetaph M-175	pwigov M-115	vsb OP-8
plagidl M-118	plwtetar M-188	pwko M-25	vth OP-11
plalp M-75	plwtetasat M-192	pwmexp M-81	vto OP-9
plbacc M-108	plwtetasr M-171	pwmo M-68	vts OP-10
plbet M-33	plwtheph M-43	pwnfa M-146	w I-3
plbgidl M-122	plwther M-51	pwnfb M-150	weff OP-36
plbinv M-100	plwthesat M-57	pwnfc M-154	wmax M-21
plcgdo M-135	plwthesr M-39	pwphib M-30	wmin M-20
plcgidl M-126	plwtheth M-61	pwr OP-58	wot M-16
plcgso M-139	plwtnuexp M-184	pwsdibl M-64	wvar M-15
plcox M-131	plwtphib M-163	pwssf M-72	xgw I-6

MOS Model 11, Level 1102 (mos1102e)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos1102e parameter=value ...

Model Parameters

1	`level=1.1e+03`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`tr=21 C`	Reference temperature.
7	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
8	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
9	`ko=0.5` `V`	Body-effect factor.
10	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
11	`phib=0.95 V`	Surface potential at the onset of strong inversion.
12	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
13	`bet=0.00192(n)/0.000381(p) A/V`²
		Gain factor.
14	`etabet=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
15	`thesr=0.356(n)/0.73(p) 1/V`
		Mobility degradation parameter due to surface roughness scattering.
16	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
17	`theph=0.0129(n)/0.001(p) 1/V`
		Mobility degradation parameter due to phonon scattering.
18	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
19	`etamob=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion charge.
20	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
21	`nu=2`	Exponent of field dependence of mobility model.
22	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
23	`ther=0.0812(n)/0.079(p) 1/V`
		Coefficient of series resistance.
24	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
25	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
26	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
27	`thesat=0.251(n)/0.173(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
28	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
29	`theth=1e-05(n)/0(p) 1/V`³
		Coefficient of self-heating.
30	`sdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Drain-induced barrier lowering parameter.
31	`mo=0`	Parameter for (short-channel) subthreshold slope.
32	`ssf=0.012(n)/0.01(p) 1/``V`
		Static-feedback parameter.
33	`alp=0.025`	Factor of channel length modulation.
34	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
35	`mexp=5`	Smoothing factor.
36	`a1=6.02(n)/6.86(p)`
		Factor of the weak-avalanche current.
37	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
38	`a2=38(n)/57.3(p) V`
		Exponent of the weak-avalanche current.
39	`a3=0.641(n)/0.425(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
40	`iginv=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
41	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
42	`igacc=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
43	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
44	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
45	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
46	`igov=0 A/V`²	Gain factor for Source/Drain overlap tunneling current.
47	`agidl=0 A/V`³	Gain factor for gate-induced leakage current.
48	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
49	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
50	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
51	`cox=2.98e-14(n)/2.72e-14(p) F`
		Oxide capacitance for the intrinsic channel (* mult).
52	`cgdo=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-drain overlap (* mult).
53	`cgso=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-source overlap (* mult).
54	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
55	`nt=1.62e-20 J`	Thermal noise coefficient.
56	`nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
57	`nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
58	`nfc=0(n)/3.63e-10(p) 1/V`
		Third coefficient of the flicker noise.
59	`tox=3.2e-09 m`	Thickness of gate oxide layer.
60	`dta=0 K`	Temperature offset of the device.
61	`cs=0`	Coefficient of Coulomb scattering.
62	`etacs=0`	Exponent of the temperature dependence of CS.
63	`rg=0` Ω	Gate resistance.
64	`scalelev=1.1e+04`	Flag for eldo model.
65	`type=n`	Transistor gender. Possible values are `n` and `p`.
66	`imax=1000 A`	Explosion current.
67	`mbe=0.0`	DCmatch parameter.
68	`mvt=0.0`	Threshold mismatch intercept.
69	`tnom (C)`	alias of tnom.
70	`tref (C)`	Alias of tnom.
71	`simkitver=3.4`
72	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`rg (`Ω`)`	Gate resistance.
37	`u`	Transistor gain (gm/gds).
38	`rout (`Ω`)`	Small-signal output resistance (1/gds).
39	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
40	`keff (``V )`	Body effect parameter.
41	`beff (A/V`²`)`	Gain factor.
42	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
43	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
44	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
45	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
46	`table_ids (A)`	Current.
47	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
48	`table_qg (Coul)`	Charge at g node.
49	`table_qd (Coul)`	Charge at d node.
50	`table_qb (Coul)`	Charge at b node.
51	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
52	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
53	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
54	`diode_region=ON`	DIODE region. Possible values are `off` and `on`.

Parameter Index

a1 M-43	diode_region OP-54	mvt M-74	ther2 M-33
a2 M-45	dta M-67	nfa M-63	thesat M-34
a3 M-46	etabet M-21	nfb M-64	thesr M-22
agidl M-54	etacs M-69	nfc M-65	theth M-36
alp M-40	etamob M-26	nt M-62	tmin M-10
bacc M-50	etaph M-25	nu M-28	tnom M-75
beff OP-41	etar M-31	nuexp M-29	tox M-66
bet M-20	etasat M-35	paramchk M-2	tr M-13
bgidl M-55	etasr M-23	phib M-18	tref M-76
binv M-48	fknee OP-45	printscaled I-2	trise I-3
cbb OP-33	fug OP-42	region I-4	type M-72
cbd OP-30	gatenoise M-61	rg M-70	u OP-37
cbg OP-31	gds OP-17	rg OP-36	vballmsg M-9
cbs OP-32	gm OP-15	rout OP-38	vbdbhigh M-6
cdb OP-21	gmb OP-16	scalelev M-71	vbdblow M-5
cdd OP-18	iavl OP-2	sdibl M-37	vbds M-4
cdg OP-19	ids OP-1	sqrtsff OP-44	vbox M-3
cds OP-20	igacc M-49	sqrtsfw OP-43	vbsbhigh M-8
cgb OP-25	igb OP-5	ssf M-39	vbsblow M-7
cgd OP-22	igd OP-4	sta1 M-44	vds OP-6
cgdo M-59	iginv M-47	stbgidl M-56	vdss OP-13
cgdol OP-34	igov M-53	stetamob M-27	vearly OP-39
cgg OP-23	igs OP-3	stop M-12	vfb M-14
cgidl M-57	keff OP-40	stphib M-19	vfbov M-51
cgs OP-24	ko M-16	stvfb M-15	vgs OP-7
cgso M-60	kov M-52	table_ids OP-46	vgt OP-12
cgsol OP-35	kpinv M-17	table_qb OP-50	von OP-52
compatible M-77	level M-1	table_qd OP-49	vp M-41
cox M-58	m I-5	table_qg OP-48	vsat OP-14
cs M-68	mbe M-73	table_vth OP-47	vsb OP-8
csb OP-29	meff O-2	tdelay M-11	vth OP-11
csd OP-26	mexp M-42	tempeff O-1	vto OP-9
csg OP-27	mo M-38	theph M-24	vts OP-10
css OP-28	mos_region OP-53	ther M-30
ctype OP-51	mult I-1	ther1 M-32

MOS Model 11, Level 1102 (mos1102et)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos1102et parameter=value ...

Model Parameters

1	`level=1.1e+03`	Transistor Level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`tr=21 C`	Reference temperature.
7	`vfb=-1.05 V`	Flat-band voltage at reference temperature.
8	`stvfb=0.0005 V/K`	Coefficient of temperature dependence of VFB.
9	`ko=0.5` `V`	Body-effect factor.
10	`kpinv=0 1/``V`	Inverse of body-effect factor of the poly-silicon gate.
11	`phib=0.95 V`	Surface potential at the onset of strong inversion.
12	`stphib=-0.00085 V/K`
		Coefficient of the temperature dependency of PHIB.
13	`bet=0.00192(n)/0.000381(p) A/V`²
		Gain factor.
14	`etabet=1.3(n)/0.5(p)`
		Exponent of the temperature dependence of the gain factor.
15	`thesr=0.356(n)/0.73(p) 1/V`
		Mobility degradation parameter due to surface roughness scattering.
16	`etasr=0.65(n)/0.5(p)`
		Exponent of the temperature dependence of THESR.
17	`theph=0.0129(n)/0.001(p) 1/V`
		Mobility degradation parameter due to phonon scattering.
18	`etaph=1.35(n)/3.75(p)`
		Exponent of the temperature dependence of THEPH.
19	`etamob=1.4(n)/3(p)`
		Effective field parameter for dependence on depletion charge.
20	`stetamob=0 1/K`	Coefficient of the temperature dependence of ETAMOB.
21	`nu=2`	Exponent of field dependence of mobility model.
22	`nuexp=5.25(n)/3.23(p)`
		Exponent of the temperature dependence of parameter NU.
23	`ther=0.0812(n)/0.079(p) 1/V`
		Coefficient of series resistance.
24	`etar=0.95(n)/0.4(p)`
		Exponent of the temperature dependence of THER.
25	`ther1=0 V`	Numerator of gate voltage dependent part of series resistance.
26	`ther2=1 V`	Denominator of gate voltage dependent part of series resistance.
27	`thesat=0.251(n)/0.173(p) 1/V`
		Velocity saturation parameter due to optical/acoustic phonon scattering.
28	`etasat=1.04(n)/0.86(p)`
		Exponent of the temperature dependence of THESAT.
29	`theth=1e-05(n)/0(p) 1/V`³
		Coefficient of self-heating.
30	`sdibl=0.000853(n)/3.55e-05(p) 1/``V`
		Drain-induced barrier lowering parameter.
31	`mo=0`	Parameter for (short-channel) subthreshold slope.
32	`ssf=0.012(n)/0.01(p) 1/``V`
		Static-feedback parameter.
33	`alp=0.025`	Factor of channel length modulation.
34	`vp=0.05 V`	Characteristic voltage of channel-length modulation.
35	`mexp=5`	Smoothing factor.
36	`a1=6.02(n)/6.86(p)`
		Factor of the weak-avalanche current.
37	`sta1=0 1/K`	Coefficient of the temperature dependence of A1.
38	`a2=38(n)/57.3(p) V`
		Exponent of the weak-avalanche current.
39	`a3=0.641(n)/0.425(p)`
		Factor of the drain-source voltage above which weak-avalanche occurs.
40	`iginv=0 A/V`²	Gain factor for intrinsic gate tunneling current in inversion.
41	`binv=48(n)/87.5(p) V`
		Probability factor for intrinsic gate tunneling current in inversion.
42	`igacc=0 A/V`²	Gain factor for intrinsic gate tunneling current in accumulation.
43	`bacc=48 V`	Probability factor for intrinsic gate tunneling current in accumulation.
44	`vfbov=0 V`	Flat-band voltage for the Source/Drain overlap extensions.
45	`kov=2.5` `V`	Body-effect factor for the Source/Drain overlap extensions.
46	`igov=0 A/V`²	Gain factor for Source/Drain overlap tunneling current.
47	`agidl=0 A/V`³	Gain factor for gate-induced leakage current.
48	`bgidl=41 V`	Probability factor for gate-induced drain leakage current at reference temperature.
49	`stbgidl=-0.000364 V/K`
		Coefficient of the temperature dependence of BGIDL.
50	`cgidl=0`	Factor for the lateral field dependence of the gate-induced leakage current.
51	`cox=2.98e-14(n)/2.72e-14(p) F`
		Oxide capacitance for the intrinsic channel (* mult).
52	`cgdo=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-drain overlap (* mult).
53	`cgso=6.39e-15(n)/6.36e-15(p) F`
		Oxide capacitance for the gate-source overlap (* mult).
54	`gatenoise=0`	Flag for in/exclusion of induced gate thermal noise.
55	`nt=1.62e-20 J`	Thermal noise coefficient.
56	`nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm`⁴`)`
		First coefficient of the flicker noise.
57	`nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm`²`)`
		Second coefficient of the flicker noise.
58	`nfc=0(n)/3.63e-10(p) 1/V`
		Third coefficient of the flicker noise.
59	`tox=3.2e-09 m`	Thickness of gate oxide layer.
60	`dta=0 K`	Temperature offset of the device.
61	`cs=0`	Coefficient of Coulomb scattering.
62	`etacs=0`	Exponent of the temperature dependence of CS.
63	`rg=0` Ω	Gate resistance.
64	`rth=300 K/W`	Thermal resistance.
65	`cth=3e-09 J/K`	Thermal capacitance.
66	`ath=0`	Temperature coefficient of the thermal resistance.
67	`scalelev=1.1e+04`	Flag for eldo model.
68	`type=n`	Transistor gender. Possible values are `n` and `p`.
69	`imax=1000 A`	Explosion current.
70	`mbe=0.0`	DCmatch parameter.
71	`mvt=0.0`	Threshold mismatch intercept.
72	`tnom (C)`	Alias of tnom.
73	`tref (C)`	Alias of tnom.
74	`simkitver=3.4`
75	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`igs (A)`	Gate-to-source current due to direct tunneling.
4	`igd (A)`	Gate-to-drain current due to direct tunneling.
5	`igb (A)`	Gate-to-bulk current due to direct tunneling.
6	`vds (V)`	Drain-source voltage.
7	`vgs (V)`	Gate-source voltage.
8	`vsb (V)`	Source-bulk voltage.
9	`vto (V)`	Zero-bias threshold voltage.
10	`vts (V)`	Threshold voltage including back-bias effects.
11	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
12	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
13	`vdss (V)`	Drain saturation voltage at actual bias.
14	`vsat (V)`	Saturation limit.
15	`gm (A/V)`	Transconductance (d ids / d vgs).
16	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
17	`gds (A/V)`	Output conductance (d ids / d vds).
18	`cdd (F)`	Capacitance (d qd / d vd).
19	`cdg (F)`	Capacitance (- d qd / d vg).
20	`cds (F)`	Capacitance (- d qd / d vs).
21	`cdb (F)`	Capacitance (- d qd / d vb).
22	`cgd (F)`	Capacitance (- d qg / d vd).
23	`cgg (F)`	Capacitance (d qg / d vg).
24	`cgs (F)`	Capacitance (- d qg / d vs).
25	`cgb (F)`	Capacitance (- d qg / d vb).
26	`csd (F)`	Capacitance (- d qs / d vd).
27	`csg (F)`	Capacitance (- d qs / d vg).
28	`css (F)`	Capacitance (d qs / d vs).
29	`csb (F)`	Capacitance (- d qs / d vb).
30	`cbd (F)`	Capacitance (- d qb / d vd).
31	`cbg (F)`	Capacitance (- d qb / d vg).
32	`cbs (F)`	Capacitance (- d qb / d vs).
33	`cbb (F)`	Capacitance (d qb / d vb).
34	`cgdol (F)`	Gate-drain overlap capacitance of the actual transistor.
35	`cgsol (F)`	Gate-source overlap capacitance of the actual transistor.
36	`rg (`Ω`)`	Gate resistance.
37	`u`	Transistor gain (gm/gds).
38	`rout (`Ω`)`	Small-signal output resistance (1/gds).
39	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
40	`keff (``V )`	Body effect parameter.
41	`beff (A/V`²`)`	Gain factor.
42	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
43	`sqrtsfw (V/``Hz )`
		Input-referred RMS white noise voltage density.
44	`sqrtsff (V/``Hz )`
		Input-referred RMS white noise voltage density at 1 kHz.
45	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
46	`Pdiss (W)`	Dissipation.
47	`TK (K)`	Actual device temperature.
48	`table_ids (A)`	Current.
49	`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
50	`table_qg (Coul)`	Charge at g node.
51	`table_qd (Coul)`	Charge at d node.
52	`table_qb (Coul)`	Charge at b node.
53	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
54	`von (V)`	Signed vth (<0 for PMOS, >0 for NMOS).
55	`pwr (W)`	Power.
56	`mos_region`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`
57	`diode_region`	DIODE region. Possible values are `off` and `on`.

Parameter Index

Pdiss OP-46	css OP-28	mos_region OP-56	theph M-24
TK OP-47	cth M-72	mult I-1	ther M-30
a1 M-43	ctype OP-53	mvt M-77	ther1 M-32
a2 M-45	diode_region OP-57	nfa M-63	ther2 M-33
a3 M-46	dta M-67	nfb M-64	thesat M-34
agidl M-54	etabet M-21	nfc M-65	thesr M-22
alp M-40	etacs M-69	nt M-62	theth M-36
ath M-73	etamob M-26	nu M-28	tmin M-10
bacc M-50	etaph M-25	nuexp M-29	tnom M-78
beff OP-41	etar M-31	paramchk M-2	tox M-66
bet M-20	etasat M-35	phib M-18	tr M-13
bgidl M-55	etasr M-23	printscaled I-2	tref M-79
binv M-48	fknee OP-45	pwr OP-55	trise I-3
cbb OP-33	fug OP-42	region I-4	type M-75
cbd OP-30	gatenoise M-61	rg M-70	u OP-37
cbg OP-31	gds OP-17	rg OP-36	vballmsg M-9
cbs OP-32	gm OP-15	rout OP-38	vbdbhigh M-6
cdb OP-21	gmb OP-16	rth M-71	vbdblow M-5
cdd OP-18	iavl OP-2	scalelev M-74	vbds M-4
cdg OP-19	ids OP-1	sdibl M-37	vbox M-3
cds OP-20	igacc M-49	sqrtsff OP-44	vbsbhigh M-8
cgb OP-25	igb OP-5	sqrtsfw OP-43	vbsblow M-7
cgd OP-22	igd OP-4	ssf M-39	vds OP-6
cgdo M-59	iginv M-47	sta1 M-44	vdss OP-13
cgdol OP-34	igov M-53	stbgidl M-56	vearly OP-39
cgg OP-23	igs OP-3	stetamob M-27	vfb M-14
cgidl M-57	keff OP-40	stop M-12	vfbov M-51
cgs OP-24	ko M-16	stphib M-19	vgs OP-7
cgso M-60	kov M-52	stvfb M-15	vgt OP-12
cgsol OP-35	kpinv M-17	table_ids OP-48	von OP-54
compatible M-80	level M-1	table_qb OP-52	vp M-41
cox M-58	m I-5	table_qd OP-51	vsat OP-14
cs M-68	mbe M-76	table_qg OP-50	vsb OP-8
csb OP-29	meff O-2	table_vth OP-49	vth OP-11
csd OP-26	mexp M-42	tdelay M-11	vto OP-9
csg OP-27	mo M-38	tempeff O-1	vts OP-10

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`w=2e-05 m`	Drawn width of the channel region.
2	`wd=2e-05 m`	Drawn width of the drift region.
3	`mult=1`	Number of devices in parallel.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`
8	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2001 parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2001.
2	`paramchk=0`	Level of clip warning info.
3	`wvar=0 m`	Width offset of the channel region.
4	`wdvar=0 m`	Width offset of the drift region.
5	`tref=25 deg. C`	Reference temperature.
6	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
7	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
8	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
9	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
10	`kor=1.6 V^1/2`	Body factor of the channel region of an infinitely wide transistor.
11	`swko=0`	Width scaling coefficient for KO.
12	`kodr=1 V^1/2`	Body factor of the drift region of an infinitely wide transistor.
13	`swkod=0`	Width scaling coefficient for the body factor of the drift region.
14	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
15	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
16	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
17	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
18	`betw=7e-05 A/V`²	Gain factor of a channel region of 1 um wide, at reference temperature.
19	`etabet=1.6`	Temperature scaling exponent for BET.
20	`betaccw=7e-05 A/V`^-2
		Gain factor of drift region of 1 um wide, at reference temperature.
21	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
22	`rdw=4e+03` Ω	On-resistance of a drift region of 1 um wide, at reference temperature.
23	`etard=1.5`	Temperature scaling exponent for RD.
24	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
25	`the1r=0.09 V^-1`	Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
26	`swthe1=0`	Width scaling coefficient for THE1.
27	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
28	`the2r=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
29	`swthe2=0`	Width scaling coefficient for THE2.
30	`the3r=0.4 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
31	`etathe3=1`	Temperature scaling exponent for THE3.
32	`swthe3=0`	Width scaling coefficient for THE3.
33	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
34	`alp=0.002`	Factor for channel length modulation.
35	`vp=0.05 V`	Characteristic voltage of channel length modulation.
36	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
37	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
38	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
39	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
40	`a1r=15`	Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.
41	`sta1=0 K^-1`	Temperature scaling coefficient for A1.
42	`swa1=0`	Width scaling coefficient for A1.
43	`a2=73 V`	Exponent of weak avalanche current.
44	`a3=0.8`	Factor of the drain-source voltage above which weak avalanche occurs.
45	`coxw=7.5e-16 F`	Oxide capacitance for an intrinsic channel region of 1um wide.
46	`coxdw=7.5e-16 F`	Oxide capacitance for an intrinsic drift region of 1um wide.
47	`cgdow=0 F`	Gate-to-drain overlap capacitance for a drift region of 1 um wide.
48	`cgsow=0 F`	Gate-to-source overlap capacitance for a channel region of 1 um wide.
49	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
50	`nfaw=1.4e+25 V^-1 m^-4`
		First coefficient of flicker noise for a channel region of 1 um wide.
51	`nfbw=2e+08 V^-1 m`^-2
		Second coefficient of flicker noise for a channel region of 1 um wide.
52	`nfcw=0 V^-1`	Third coefficient of flicker noise for a channel region of 1 um wide.
53	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
54	`dta=0 K`	Temperature offset to the ambient temperature.
55	`type=n`	Transistor gender. Possible values are `n` and `p`.
56	`imax=1000 A`	Explosion current.
57	`vbox=0.0 V`	Oxide breakdown voltage.
58	`vbds=0.0 V`	Drain-source breakdown voltage.
59	`tnom (deg. C)`	Alias of tnom.
60	`tr (deg. C)`	Alias of tnom.
61	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`alp`	Factor for channel length modulation.
17	`vp (V)`	Characteristic voltage of channel length modulation.
18	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
19	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
20	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
21	`ssf (V^-1/2)`	Factor for static feedback.
22	`a1`	Factor of weak avalanche current, at reference temperature.
23	`a2 (V)`	Exponent of weak avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak avalanche occurs.
25	`cox (F)`	Oxide capacitance for the intrinsic channel region.
26	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
27	`cgdo (F)`	Gate-to-drain overlap capacitance.
28	`cgso (F)`	Gate-to-source overlap capacitance.
29	`nt (J)`	Coefficient of thermal noise, at reference temperature.
30	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
31	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
32	`nfc (V^-1)`	Third coefficient of flicker noise.
33	`tox (m)`	Thickness of the oxide above the channel region.
34	`int_s`
35	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Internal drain saturation voltage at actual bias.
13	`vdssat (V)`	Drain-source saturation voltage at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`weff (m)`	Effective channel width for geometrical models.
34	`wdeff (m)`	Effective drift region width for geometrical model.
35	`u`	Transistor gain (gm/gds).
36	`rout (`Ω`)`	Small-signal output resistance (1/gds).
37	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
38	`beff (A/V`²`)`	Gain factor.
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
40	`gmmos (A/V)`	Transconductance of channel region.
41	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
42	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
43	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
44	`mos_region=SUBTHRESHOLD`
45	`diode_region=ON`

Parameter Index

a1 O-22	diode_region OP-45	nfc O-32	the3r M-30
a1r M-40	dta M-54	nfcw M-52	tnom M-59
a2 M-43	etabet M-19	nt M-49	tox M-53
a2 O-23	etabetacc M-21	nt O-29	tox O-33
a3 M-44	etard M-23	paramchk M-2	tr M-60
a3 O-24	etathe3 M-31	phib M-14	tref M-5
alp M-34	fknee OP-43	phib O-5	trise I-8
alp O-16	fug OP-39	phibd M-16	type M-55
beff OP-38	gds OP-16	phibd O-6	u OP-35
bet O-7	gm OP-14	rd O-9	vbds M-58
betacc O-8	gmb OP-15	rdw M-22	vbox M-57
betaccw M-20	gmmos OP-40	region I-4	vdiseff OP-11
betw M-18	iavl OP-2	rout OP-36	vdissat OP-12
cbb OP-32	ids OP-1	sdibl M-36	vds OP-3
cbd OP-29	imax M-56	sdibl O-18	vdssat OP-13
cbg OP-30	int_d O-35	simkitver M-61	vearly OP-37
cbs OP-31	int_s O-34	sqrtsff OP-42	vfb M-6
cdb OP-20	ko O-3	sqrtsfw OP-41	vfb O-1
cdd OP-17	kod O-4	ssf M-39	vfbd M-8
cdg OP-18	kodr M-12	ssf O-21	vfbd O-2
cds OP-19	kor M-10	sta1 M-41	vgs OP-4
cgb OP-24	lamd M-24	stphib M-15	vgt OP-9
cgd OP-21	lamd O-10	stphibd M-17	vp M-35
cgdo O-27	level M-1	stvfb M-7	vp O-17
cgdow M-47	m I-5	stvfbd M-9	vsb OP-5
cgg OP-22	mexp M-33	swa1 M-42	vth OP-8
cgs OP-23	mexp O-15	swko M-11	vto OP-6
cgso O-28	mo M-38	swkod M-13	vtod OP-10
cgsow M-48	mo O-20	swthe1 M-26	vts OP-7
cox O-25	mos_region I-6	swthe2 M-29	w I-1
coxd O-26	mos_region OP-44	swthe3 M-32	wd I-2
coxdw M-46	msdibl M-37	the1 O-11	wdeff OP-34
coxw M-45	msdibl O-19	the1acc M-27	wdvar M-4
csb OP-28	mult I-3	the1acc O-12	weff OP-33
csd OP-25	nfa O-30	the1r M-25	wvar M-3
csg OP-26	nfaw M-50	the2 O-13
css OP-27	nfb O-31	the2r M-28
diode_region I-7	nfbw M-51	the3 O-14

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001e)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
3	`m=1`	Alias of mult.
4	`mos_region=SUBTHRESHOLD`
5	`diode_region=ON`
6	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2001e parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2001.
2	`paramchk=0`	Level of clip warning info.
3	`tref=25 deg. C`	Reference temperature.
4	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
5	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
6	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
7	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
8	`ko=1.6 V^1/2`	Body factor of the channel region.
9	`kod=1 V^1/2`	Body factor of the drift region.
10	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
11	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
12	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
13	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
14	`bet=0.0014 A/V`²	Gain factor of the channel region, at reference temperature.
15	`etabet=1.6`	Temperature scaling exponent for BET.
16	`betacc=0.0014 A/V`^-2
		Gain factor for accumulation in the drift region, at reference temperature.
17	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
18	`rd=200` Ω	On-resistance of the drift region, at reference temperature.
19	`etard=1.5`	Temperature scaling exponent for RD.
20	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
21	`the1=0.09 V^-1`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
22	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
23	`the2=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
24	`the3=0.4 V^-1`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
25	`etathe3=1`	Temperature scaling exponent for THE3.
26	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
27	`alp=0.002`	Factor for channel length modulation.
28	`vp=0.05 V`	Characteristic voltage of channel length modulation.
29	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
30	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
31	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
32	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
33	`a1=15`	Factor of weak avalanche current, at reference temperature.
34	`sta1=0 K^-1`	Temperature scaling coefficient for A1.
35	`a2=73 V`	Exponent of weak avalanche current.
36	`a3=0.8`	Factor of the drain-source voltage above which weak avalanche occurs.
37	`cox=1.5e-14 F`	Oxide capacitance for the intrinsic channel region.
38	`coxd=1.5e-14 F`	Oxide capacitance for the intrinsic drift region.
39	`cgdo=0 F`	Gate-to-drain overlap capacitance.
40	`cgso=0 F`	Gate-to-source overlap capacitance.
41	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
42	`nfa=7e+23 V^-1 m^-4`
		First coefficient of flicker noise.
43	`nfb=1e+07 V^-1 m`^-2
		Second coefficient of flicker noise.
44	`nfc=0 V^-1`	Third coefficient of flicker noise.
45	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
46	`dta=0 K`	Temperature offset to the ambient temperature.
47	`type=n`	Transistor gender. Possible values are `n` and `p`.
48	`imax=1000 A`	Explosion current.
49	`vbox=0.0 V`	Oxide breakdown voltage.
50	`vbds=0.0 V`	Drain-source breakdown voltage.
51	`tnom (deg. C)`	Alias of tnom.
52	`tr (deg. C)`	Alias of tnom.
53	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`alp`	Factor for channel length modulation.
17	`vp (V)`	Characteristic voltage of channel length modulation.
18	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
19	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
20	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
21	`ssf (V^-1/2)`	Factor for static feedback.
22	`a1`	Factor of weak avalanche current, at reference temperature.
23	`a2 (V)`	Exponent of weak avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak avalanche occurs.
25	`cox (F)`	Oxide capacitance for the intrinsic channel region.
26	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
27	`cgdo (F)`	Gate-to-drain overlap capacitance.
28	`cgso (F)`	Gate-to-source overlap capacitance.
29	`nt (J)`	Coefficient of thermal noise, at reference temperature.
30	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
31	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
32	`nfc (V^-1)`	Third coefficient of flicker noise.
33	`tox (m)`	Thickness of the oxide above the channel region.
34	`int_s`
35	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Internal drain saturation voltage at actual bias.
13	`vdssat (V)`	Drain-source saturation voltage at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`u`	Transistor gain (gm/gds).
34	`rout (`Ω`)`	Small-signal output resistance (1/gds).
35	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
36	`beff (A/V`²`)`	Gain factor.
37	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
38	`gmmos (A/V)`	Transconductance of channel region.
39	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
40	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
41	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
42	`mos_region=SUBTHRESHOLD`
43	`diode_region=ON`

Parameter Index

a1 M-33	csg OP-26	msdibl O-19	the2 M-23
a1 O-22	css OP-27	mult I-1	the2 O-13
a2 M-35	diode_region I-5	nfa M-42	the3 M-24
a2 O-23	diode_region OP-43	nfa O-30	the3 O-14
a3 M-36	dta M-46	nfb M-43	tnom M-51
a3 O-24	etabet M-15	nfb O-31	tox M-45
alp M-27	etabetacc M-17	nfc M-44	tox O-33
alp O-16	etard M-19	nfc O-32	tr M-52
beff OP-36	etathe3 M-25	nt M-41	tref M-3
bet M-14	fknee OP-41	nt O-29	trise I-6
bet O-7	fug OP-37	paramchk M-2	type M-47
betacc M-16	gds OP-16	phib M-10	u OP-33
betacc O-8	gm OP-14	phib O-5	vbds M-50
cbb OP-32	gmb OP-15	phibd M-12	vbox M-49
cbd OP-29	gmmos OP-38	phibd O-6	vdiseff OP-11
cbg OP-30	iavl OP-2	rd M-18	vdissat OP-12
cbs OP-31	ids OP-1	rd O-9	vds OP-3
cdb OP-20	imax M-48	region I-2	vdssat OP-13
cdd OP-17	int_d O-35	rout OP-34	vearly OP-35
cdg OP-18	int_s O-34	sdibl M-29	vfb M-4
cds OP-19	ko M-8	sdibl O-18	vfb O-1
cgb OP-24	ko O-3	simkitver M-53	vfbd M-6
cgd OP-21	kod M-9	sqrtsff OP-40	vfbd O-2
cgdo M-39	kod O-4	sqrtsfw OP-39	vgs OP-4
cgdo O-27	lamd M-20	ssf M-32	vgt OP-9
cgg OP-22	lamd O-10	ssf O-21	vp M-28
cgs OP-23	level M-1	sta1 M-34	vp O-17
cgso M-40	m I-3	stphib M-11	vsb OP-5
cgso O-28	mexp M-26	stphibd M-13	vth OP-8
cox M-37	mexp O-15	stvfb M-5	vto OP-6
cox O-25	mo M-31	stvfbd M-7	vtod OP-10
coxd M-38	mo O-20	the1 M-21	vts OP-7
coxd O-26	mos_region I-4	the1 O-11
csb OP-28	mos_region OP-42	the1acc M-22
csd OP-25	msdibl M-30	the1acc O-12

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001et)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
3	`m=1`	Alias of mult.
4	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2001et parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2001.
2	`paramchk=0`	Level of clip warning info.
3	`tref=25 deg. C`	Reference temperature.
4	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
5	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
6	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
7	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
8	`ko=1.6 V^1/2`	Body factor of the channel region.
9	`kod=1 V^1/2`	Body factor of the drift region.
10	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
11	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
12	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
13	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
14	`bet=0.0014 A/V`²	Gain factor of the channel region, at reference temperature.
15	`etabet=1.6`	Temperature scaling exponent for BET.
16	`betacc=0.0014 A/V`^-2
		Gain factor for accumulation in the drift region, at reference temperature.
17	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
18	`rd=200` Ω	On-resistance of the drift region, at reference temperature.
19	`etard=1.5`	Temperature scaling exponent for RD.
20	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
21	`the1=0.09 V^-1`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
22	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
23	`the2=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
24	`the3=0.4 V^-1`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
25	`etathe3=1`	Temperature scaling exponent for THE3.
26	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
27	`alp=0.002`	Factor for channel length modulation.
28	`vp=0.05 V`	Characteristic voltage of channel length modulation.
29	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
30	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
31	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
32	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
33	`a1=15`	Factor of weak avalanche current, at reference temperature.
34	`sta1=0 K^-1`	Temperature scaling coefficient for A1.
35	`a2=73 V`	Exponent of weak avalanche current.
36	`a3=0.8`	Factor of the drain-source voltage above which weak avalanche occurs.
37	`cox=1.5e-14 F`	Oxide capacitance for the intrinsic channel region.
38	`coxd=1.5e-14 F`	Oxide capacitance for the intrinsic drift region.
39	`cgdo=0 F`	Gate-to-drain overlap capacitance.
40	`cgso=0 F`	Gate-to-source overlap capacitance.
41	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
42	`nfa=7e+23 V^-1 m^-4`
		First coefficient of flicker noise.
43	`nfb=1e+07 V^-1 m`^-2
		Second coefficient of flicker noise.
44	`nfc=0 V^-1`	Third coefficient of flicker noise.
45	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
46	`dta=0 K`	Temperature offset to the ambient temperature.
47	`rth=300 K/W`	Thermal resistance.
48	`cth=3e-09 J/K`	Thermal capacitance.
49	`ath=0`	Temperature coefficient of the thermal resistance.
50	`type=n`	Transistor gender. Possible values are `n` and `p`.
51	`imax=1000 A`	Explosion current.
52	`vbox=0.0 V`	Oxide breakdown voltage.
53	`vbds=0.0 V`	Drain-source breakdown voltage.
54	`tnom (deg. C)`	Alias of tnom.
55	`tr (deg. C)`	Alias of tnom.
56	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`alp`	Factor for channel length modulation.
17	`vp (V)`	Characteristic voltage of channel length modulation.
18	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
19	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
20	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
21	`ssf (V^-1/2)`	Factor for static feedback.
22	`a1`	Factor of weak avalanche current, at reference temperature.
23	`a2 (V)`	Exponent of weak avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak avalanche occurs.
25	`cox (F)`	Oxide capacitance for the intrinsic channel region.
26	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
27	`cgdo (F)`	Gate-to-drain overlap capacitance.
28	`cgso (F)`	Gate-to-source overlap capacitance.
29	`nt (J)`	Coefficient of thermal noise, at reference temperature.
30	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
31	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
32	`nfc (V^-1)`	Third coefficient of flicker noise.
33	`tox (m)`	Thickness of the oxide above the channel region.
34	`rth (K/W)`	Thermal resistance.
35	`cth (J/K)`	Thermal capacitance.
36	`int_s`
37	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Internal drain saturation voltage at actual bias.
13	`vdssat (V)`	Drain-source saturation voltage at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`u`	Transistor gain (gm/gds).
34	`rout (`Ω`)`	Small-signal output resistance (1/gds).
35	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
36	`beff (A/V`²`)`	Gain factor.
37	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
38	`gmmos (A/V)`	Transconductance of channel region.
39	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
40	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
41	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
42	`Pdiss (W)`	Dissipation.
43	`TK (K)`	Actual temperature.
44	`pwr (W)`	Power.

Parameter Index

Pdiss OP-42	coxd O-26	mult I-1	the1acc O-12
TK OP-43	csb OP-28	nfa M-42	the2 M-23
a1 M-33	csd OP-25	nfa O-30	the2 O-13
a1 O-22	csg OP-26	nfb M-43	the3 M-24
a2 M-35	css OP-27	nfb O-31	the3 O-14
a2 O-23	cth M-48	nfc M-44	tnom M-54
a3 M-36	cth O-35	nfc O-32	tox M-45
a3 O-24	dta M-46	nt M-41	tox O-33
alp M-27	etabet M-15	nt O-29	tr M-55
alp O-16	etabetacc M-17	paramchk M-2	tref M-3
ath M-49	etard M-19	phib M-10	trise I-4
beff OP-36	etathe3 M-25	phib O-5	type M-50
bet M-14	fknee OP-41	phibd M-12	u OP-33
bet O-7	fug OP-37	phibd O-6	vbds M-53
betacc M-16	gds OP-16	pwr OP-44	vbox M-52
betacc O-8	gm OP-14	rd M-18	vdiseff OP-11
cbb OP-32	gmb OP-15	rd O-9	vdissat OP-12
cbd OP-29	gmmos OP-38	region I-2	vds OP-3
cbg OP-30	iavl OP-2	rout OP-34	vdssat OP-13
cbs OP-31	ids OP-1	rth M-47	vearly OP-35
cdb OP-20	imax M-51	rth O-34	vfb M-4
cdd OP-17	ko M-8	sdibl M-29	vfb O-1
cdg OP-18	ko O-3	sdibl O-18	vfbd M-6
cds OP-19	kod M-9	sqrtsff OP-40	vfbd O-2
cgb OP-24	kod O-4	sqrtsfw OP-39	vgs OP-4
cgd OP-21	lamd M-20	ssf M-32	vgt OP-9
cgdo M-39	lamd O-10	ssf O-21	vp M-28
cgdo O-27	level M-1	sta1 M-34	vp O-17
cgg OP-22	m I-3	stphib M-11	vsb OP-5
cgs OP-23	mexp M-26	stphibd M-13	vth OP-8
cgso M-40	mexp O-15	stvfb M-5	vto OP-6
cgso O-28	mo M-31	stvfbd M-7	vtod OP-10
cox M-37	mo O-20	the1 M-21	vts OP-7
cox O-25	msdibl M-30	the1 O-11
coxd M-38	msdibl O-19	the1acc M-22

Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001t)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`w=2e-05 m`	Drawn width of the channel region.
2	`wd=2e-05 m`	Drawn width of the drift region.
3	`mult=1`	Number of devices in parallel.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`
8	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2001t parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2001.
2	`paramchk=0`	Level of clip warning info.
3	`wvar=0 m`	Width offset of the channel region.
4	`wdvar=0 m`	Width offset of the drift region.
5	`tref=25 deg. C`	Reference temperature.
6	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
7	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
8	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
9	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
10	`kor=1.6 V^1/2`	Body factor of the channel region of an infinitely wide transistor.
11	`swko=0`	Width scaling coefficient for KO.
12	`kodr=1 V^1/2`	Body factor of the drift region of an infinitely wide transistor.
13	`swkod=0`	Width scaling coefficient for the body factor of the drift region.
14	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
15	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
16	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
17	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
18	`betw=7e-05 A/V`²	Gain factor of a channel region of 1 um wide, at reference temperature.
19	`etabet=1.6`	Temperature scaling exponent for BET.
20	`betaccw=7e-05 A/V`^-2
		Gain factor of drift region of 1 um wide, at reference temperature.
21	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
22	`rdw=4e+03` Ω	On-resistance of a drift region of 1 um wide, at reference temperature.
23	`etard=1.5`	Temperature scaling exponent for RD.
24	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
25	`the1r=0.09 V^-1`	Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
26	`swthe1=0`	Width scaling coefficient for THE1.
27	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
28	`the2r=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
29	`swthe2=0`	Width scaling coefficient for THE2.
30	`the3r=0.4 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
31	`etathe3=1`	Temperature scaling exponent for THE3.
32	`swthe3=0`	Width scaling coefficient for THE3.
33	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
34	`alp=0.002`	Factor for channel length modulation.
35	`vp=0.05 V`	Characteristic voltage of channel length modulation.
36	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
37	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
38	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
39	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
40	`a1r=15`	Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.
41	`sta1=0 K^-1`	Temperature scaling coefficient for A1.
42	`swa1=0`	Width scaling coefficient for A1.
43	`a2=73 V`	Exponent of weak avalanche current.
44	`a3=0.8`	Factor of the drain-source voltage above which weak avalanche occurs.
45	`coxw=7.5e-16 F`	Oxide capacitance for an intrinsic channel region of 1um wide.
46	`coxdw=7.5e-16 F`	Oxide capacitance for an intrinsic drift region of 1um wide.
47	`cgdow=0 F`	Gate-to-drain overlap capacitance for a drift region of 1 um wide.
48	`cgsow=0 F`	Gate-to-source overlap capacitance for a channel region of 1 um wide.
49	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
50	`nfaw=1.4e+25 V^-1 m^-4`
		First coefficient of flicker noise for a channel region of 1 um wide.
51	`nfbw=2e+08 V^-1 m`^-2
		Second coefficient of flicker noise for a channel region of 1 um wide.
52	`nfcw=0 V^-1`	Third coefficient of flicker noise for a channel region of 1 um wide.
53	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
54	`dta=0 K`	Temperature offset to the ambient temperature.
55	`rth=300 K/W`	Thermal resistance.
56	`cth=3e-09 J/K`	Thermal capacitance.
57	`ath=0`	Temperature coefficient of the thermal resistance.
58	`type=n`	Transistor gender. Possible values are `n` and `p`.
59	`imax=1000 A`	Explosion current.
60	`vbox=0.0 V`	Oxide breakdown voltage.
61	`vbds=0.0 V`	Drain-source breakdown voltage.
62	`tnom (deg. C)`	Alias of tnom.
63	`tr (deg. C)`	Alias of tnom.
64	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`alp`	Factor for channel length modulation.
17	`vp (V)`	Characteristic voltage of channel length modulation.
18	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
19	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
20	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
21	`ssf (V^-1/2)`	Factor for static feedback.
22	`a1`	Factor of weak avalanche current, at reference temperature.
23	`a2 (V)`	Exponent of weak avalanche current.
24	`a3`	Factor of the drain-source voltage above which weak avalanche occurs.
25	`cox (F)`	Oxide capacitance for the intrinsic channel region.
26	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
27	`cgdo (F)`	Gate-to-drain overlap capacitance.
28	`cgso (F)`	Gate-to-source overlap capacitance.
29	`nt (J)`	Coefficient of thermal noise, at reference temperature.
30	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
31	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
32	`nfc (V^-1)`	Third coefficient of flicker noise.
33	`tox (m)`	Thickness of the oxide above the channel region.
34	`rth (K/W)`	Thermal resistance.
35	`cth (J/K)`	Thermal capacitance.
36	`int_s`
37	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Internal drain saturation voltage at actual bias.
13	`vdssat (V)`	Drain-source saturation voltage at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`weff (m)`	Effective channel width for geometrical models.
34	`wdeff (m)`	Effective drift region width for geometrical model.
35	`u`	Transistor gain (gm/gds).
36	`rout (`Ω`)`	Small-signal output resistance (1/gds).
37	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
38	`beff (A/V`²`)`	Gain factor.
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
40	`gmmos (A/V)`	Transconductance of channel region.
41	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
42	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
43	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
44	`Pdiss (W)`	Dissipation.
45	`TK (K)`	Actual temperature.
46	`mos_region=SUBTHRESHOLD`
47	`diode_region=ON`

Parameter Index

Pdiss OP-44	css OP-27	nfaw M-50	the1r M-25
TK OP-45	cth M-56	nfb O-31	the2 O-13
a1 O-22	cth O-35	nfbw M-51	the2r M-28
a1r M-40	diode_region I-7	nfc O-32	the3 O-14
a2 M-43	diode_region OP-47	nfcw M-52	the3r M-30
a2 O-23	dta M-54	nt M-49	tnom M-62
a3 M-44	etabet M-19	nt O-29	tox M-53
a3 O-24	etabetacc M-21	paramchk M-2	tox O-33
alp M-34	etard M-23	phib M-14	tr M-63
alp O-16	etathe3 M-31	phib O-5	tref M-5
ath M-57	fknee OP-43	phibd M-16	trise I-8
beff OP-38	fug OP-39	phibd O-6	type M-58
bet O-7	gds OP-16	rd O-9	u OP-35
betacc O-8	gm OP-14	rdw M-22	vbds M-61
betaccw M-20	gmb OP-15	region I-4	vbox M-60
betw M-18	gmmos OP-40	rout OP-36	vdiseff OP-11
cbb OP-32	iavl OP-2	rth M-55	vdissat OP-12
cbd OP-29	ids OP-1	rth O-34	vds OP-3
cbg OP-30	imax M-59	sdibl M-36	vdssat OP-13
cbs OP-31	int_d O-37	sdibl O-18	vearly OP-37
cdb OP-20	int_s O-36	simkitver M-64	vfb M-6
cdd OP-17	ko O-3	sqrtsff OP-42	vfb O-1
cdg OP-18	kod O-4	sqrtsfw OP-41	vfbd M-8
cds OP-19	kodr M-12	ssf M-39	vfbd O-2
cgb OP-24	kor M-10	ssf O-21	vgs OP-4
cgd OP-21	lamd M-24	sta1 M-41	vgt OP-9
cgdo O-27	lamd O-10	stphib M-15	vp M-35
cgdow M-47	level M-1	stphibd M-17	vp O-17
cgg OP-22	m I-5	stvfb M-7	vsb OP-5
cgs OP-23	mexp M-33	stvfbd M-9	vth OP-8
cgso O-28	mexp O-15	swa1 M-42	vto OP-6
cgsow M-48	mo M-38	swko M-11	vtod OP-10
cox O-25	mo O-20	swkod M-13	vts OP-7
coxd O-26	mos_region I-6	swthe1 M-26	w I-1
coxdw M-46	mos_region OP-46	swthe2 M-29	wd I-2
coxw M-45	msdibl M-37	swthe3 M-32	wdeff OP-34
csb OP-28	msdibl O-19	the1 O-11	wdvar M-4
csd OP-25	mult I-3	the1acc M-27	weff OP-33
csg OP-26	nfa O-30	the1acc O-12	wvar M-3

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`w=2e-05 m`	Drawn width of the channel region.
3	`wd=2e-05 m`	Drawn width of the drift region.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`
8	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2002 parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2002.
2	`paramchk=0`	Level of clip warning info.
3	`wvar=0 m`	Width offset of the channel region.
4	`wdvar=0 m`	Width offset of the drift region.
5	`tref=25 deg. C`	Reference temperature.
6	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
7	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
8	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
9	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
10	`kor=1.6 V^1/2`	Body factor of the channel region of an infinitely wide transistor.
11	`swko=0`	Width scaling coefficient for KO.
12	`kodr=1 V^1/2`	Body factor of the drift region of an infinitely wide transistor.
13	`swkod=0`	Width scaling coefficient for the body factor of the drift region.
14	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
15	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
16	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
17	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
18	`betw=7e-05 A/V`²	Gain factor of a channel region of 1 um wide, at reference temperature.
19	`etabet=1.6`	Temperature scaling exponent for BET.
20	`betaccw=7e-05 A/V`^-2
		Gain factor of drift region of 1 um wide, at reference temperature.
21	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
22	`rdw=4e+03` Ω	On-resistance of a drift region of 1 um wide, at reference temperature.
23	`etard=1.5`	Temperature scaling exponent for RD.
24	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
25	`the1r=0.09 V^-1`	Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
26	`swthe1=0`	Width scaling coefficient for THE1.
27	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
28	`the2r=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
29	`swthe2=0`	Width scaling coefficient for THE2.
30	`the3r=0.4 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
31	`etathe3=1`	Temperature scaling exponent for THE3.
32	`swthe3=0`	Width scaling coefficient for THE3.
33	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
34	`the3dr=0 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
35	`etathe3d=1`	Temperature scaling exponent for THE3D.
36	`swthe3d=0`	Width scaling coefficient for THE3D.
37	`mexpd=2`	Smoothing factor for transition from linear to quasi-saturation regime.
38	`alp=0.002`	Factor for channel length modulation.
39	`vp=0.05 V`	Characteristic voltage of channel length modulation.
40	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
41	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
42	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
43	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
44	`a1chr=15`	Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.
45	`sta1ch=0 K^-1`	Temperature scaling coefficient for A1CH.
46	`swa1ch=0`	Width scaling coefficient for A1CH.
47	`a2ch=73 V`	Exponent of channel weak avalanche current.
48	`a3ch=0.8`	Factor of the drain-source voltage above which channel weak avalanche occurs.
49	`a1drr=15`	Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.
50	`sta1dr=0 K^-1`	Temperature scaling coefficient for A1DR.
51	`swa1dr=0`	Width scaling coefficient for A1DR.
52	`a2dr=73 V`	Exponent of drift weak avalanche current.
53	`a3dr=0.8`	Factor of the drain-source voltage above which drift weak avalanche occurs.
54	`coxw=7.5e-16 F`	Oxide capacitance for an intrinsic channel region of 1um wide.
55	`coxdw=7.5e-16 F`	Oxide capacitance for an intrinsic drift region of 1um wide.
56	`cgdow=0 F`	Gate-to-drain overlap capacitance for a drift region of 1 um wide.
57	`cgsow=0 F`	Gate-to-source overlap capacitance for a channel region of 1 um wide.
58	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
59	`nfaw=1.4e+25 V^-1 m^-4`
		First coefficient of flicker noise for a channel region of 1 um wide.
60	`nfbw=2e+08 V^-1 m`^-2
		Second coefficient of flicker noise for a channel region of 1 um wide.
61	`nfcw=0 V^-1`	Third coefficient of flicker noise for a channel region of 1 um wide.
62	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
63	`dta=0 K`	Temperature offset to the ambient temperature.
64	`type=n`	Transistor gender. Possible values are `n` and `p`.
65	`imax=1000 A`	Explosion current.
66	`vbox=0.0 V`	Oxide breakdown voltage.
67	`vbds=0.0 V`	Drain-source breakdown voltage.
68	`tnom (deg. C)`	Alias of tnom.
69	`tr (deg. C)`	Alias of tnom.
70	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`the3d (V^-1)`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
17	`etathe3d`	Temperature scaling exponent for THE3D.
18	`mexpd`	Smoothing factor for transition from linear to quasi-saturation regime.
19	`alp`	Factor for channel length modulation.
20	`vp (V)`	Characteristic voltage of channel length modulation.
21	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
22	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
23	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
24	`ssf (V^-1/2)`	Factor for static feedback.
25	`a1ch`	Factor of channel weak avalanche current, at reference temperature.
26	`a2ch (V)`	Exponent of channel weak avalanche current.
27	`a3ch`	Factor of the drain-source voltage above which channel weak avalanche occurs.
28	`a1dr`	Factor of drift weak avalanche current, at reference temperature.
29	`a2dr (V)`	Exponent of drift weak avalanche current.
30	`a3dr`	Factor of the drain-source voltage above which drift weak avalanche occurs.
31	`cox (F)`	Oxide capacitance for the intrinsic channel region.
32	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
33	`cgdo (F)`	Gate-to-drain overlap capacitance.
34	`cgso (F)`	Gate-to-source overlap capacitance.
35	`nt (J)`	Coefficient of thermal noise, at reference temperature.
36	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
37	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
38	`nfc (V^-1)`	Third coefficient of flicker noise.
39	`tox (m)`	Thickness of the oxide above the channel region.
40	`int_s`
41	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Saturation voltage of channel region at actual bias.
13	`vddisat (V)`	Saturation voltage of drift region at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`weff (m)`	Effective channel width for geometrical models.
34	`wdeff (m)`	Effective drift region width for geometrical model.
35	`u`	Transistor gain (gm/gds).
36	`rout (`Ω`)`	Small-signal output resistance (1/gds).
37	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
38	`beff (A/V`²`)`	Gain factor.
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
40	`gmmos (A/V)`	Transconductance of channel region.
41	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
42	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
43	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
44	`mos_region=SUBTHRESHOLD`
45	`diode_region=ON`

Parameter Index

a1ch O-25	csg OP-26	nfa O-36	the1r M-25
a1chr M-44	css OP-27	nfaw M-59	the2 O-13
a1dr O-28	diode_region I-7	nfb O-37	the2r M-28
a1drr M-49	diode_region OP-45	nfbw M-60	the3 O-14
a2ch M-47	dta M-63	nfc O-38	the3d O-16
a2ch O-26	etabet M-19	nfcw M-61	the3dr M-34
a2dr M-52	etabetacc M-21	nt M-58	the3r M-30
a2dr O-29	etard M-23	nt O-35	tnom M-68
a3ch M-48	etathe3 M-31	paramchk M-2	tox M-62
a3ch O-27	etathe3d M-35	phib M-14	tox O-39
a3dr M-53	etathe3d O-17	phib O-5	tr M-69
a3dr O-30	fknee OP-43	phibd M-16	tref M-5
alp M-38	fug OP-39	phibd O-6	trise I-8
alp O-19	gds OP-16	rd O-9	type M-64
beff OP-38	gm OP-14	rdw M-22	u OP-35
bet O-7	gmb OP-15	region I-4	vbds M-67
betacc O-8	gmmos OP-40	rout OP-36	vbox M-66
betaccw M-20	iavl OP-2	sdibl M-40	vddisat OP-13
betw M-18	ids OP-1	sdibl O-21	vdiseff OP-11
cbb OP-32	imax M-65	simkitver M-70	vdissat OP-12
cbd OP-29	int_d O-41	sqrtsff OP-42	vds OP-3
cbg OP-30	int_s O-40	sqrtsfw OP-41	vearly OP-37
cbs OP-31	ko O-3	ssf M-43	vfb M-6
cdb OP-20	kod O-4	ssf O-24	vfb O-1
cdd OP-17	kodr M-12	sta1ch M-45	vfbd M-8
cdg OP-18	kor M-10	sta1dr M-50	vfbd O-2
cds OP-19	lamd M-24	stphib M-15	vgs OP-4
cgb OP-24	lamd O-10	stphibd M-17	vgt OP-9
cgd OP-21	level M-1	stvfb M-7	vp M-39
cgdo O-33	m I-5	stvfbd M-9	vp O-20
cgdow M-56	mexp M-33	swa1ch M-46	vsb OP-5
cgg OP-22	mexp O-15	swa1dr M-51	vth OP-8
cgs OP-23	mexpd M-37	swko M-11	vto OP-6
cgso O-34	mexpd O-18	swkod M-13	vtod OP-10
cgsow M-57	mo M-42	swthe1 M-26	vts OP-7
cox O-31	mo O-23	swthe2 M-29	w I-2
coxd O-32	mos_region I-6	swthe3 M-32	wd I-3
coxdw M-55	mos_region OP-44	swthe3d M-36	wdeff OP-34
coxw M-54	msdibl M-41	the1 O-11	wdvar M-4
csb OP-28	msdibl O-22	the1acc M-27	weff OP-33
csd OP-25	mult I-1	the1acc O-12	wvar M-3

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002e)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
3	`m=1`	Alias of mult.
4	`mos_region=SUBTHRESHOLD`
5	`diode_region=ON`
6	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2002e parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2002.
2	`paramchk=0`	Level of clip warning info.
3	`tref=25 deg. C`	Reference temperature.
4	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
5	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
6	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
7	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
8	`ko=1.6 V^1/2`	Body factor of the channel region.
9	`kod=1 V^1/2`	Body factor of the drift region.
10	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
11	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
12	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
13	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
14	`bet=0.0014 A/V`²	Gain factor of the channel region, at reference temperature.
15	`etabet=1.6`	Temperature scaling exponent for BET.
16	`betacc=0.0014 A/V`^-2
		Gain factor for accumulation in the drift region, at reference temperature.
17	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
18	`rd=200` Ω	On-resistance of the drift region, at reference temperature.
19	`etard=1.5`	Temperature scaling exponent for RD.
20	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
21	`the1=0.09 V^-1`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
22	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
23	`the2=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
24	`the3=0.4 V^-1`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
25	`etathe3=1`	Temperature scaling exponent for THE3.
26	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
27	`the3d=0 V^-1`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
28	`etathe3d=1`	Temperature scaling exponent for THE3D.
29	`mexpd=2`	Smoothing factor for transition from linear to quasi-saturation regime.
30	`alp=0.002`	Factor for channel length modulation.
31	`vp=0.05 V`	Characteristic voltage of channel length modulation.
32	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
33	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
34	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
35	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
36	`a1ch=15`	Factor of channel weak avalanche current, at reference temperature.
37	`sta1ch=0 K^-1`	Temperature scaling coefficient for A1CH.
38	`a2ch=73 V`	Exponent of channel weak avalanche current.
39	`a3ch=0.8`	Factor of the drain-source voltage above which channel weak avalanche occurs.
40	`a1dr=15`	Factor of drift weak avalanche current, at reference temperature.
41	`sta1dr=0 K^-1`	Temperature scaling coefficient for A1DR.
42	`a2dr=73 V`	Exponent of drift weak avalanche current.
43	`a3dr=0.8`	Factor of the drain-source voltage above which drift weak avalanche occurs.
44	`cox=1.5e-14 F`	Oxide capacitance for the intrinsic channel region.
45	`coxd=1.5e-14 F`	Oxide capacitance for the intrinsic drift region.
46	`cgdo=0 F`	Gate-to-drain overlap capacitance.
47	`cgso=0 F`	Gate-to-source overlap capacitance.
48	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
49	`nfa=7e+23 V^-1 m^-4`
		First coefficient of flicker noise.
50	`nfb=1e+07 V^-1 m`^-2
		Second coefficient of flicker noise.
51	`nfc=0 V^-1`	Third coefficient of flicker noise.
52	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
53	`dta=0 K`	Temperature offset to the ambient temperature.
54	`type=n`	Transistor gender. Possible values are `n` and `p`.
55	`imax=1000 A`	Explosion current.
56	`vbox=0.0 V`	Oxide breakdown voltage.
57	`vbds=0.0 V`	Drain-source breakdown voltage.
58	`tnom (deg. C)`	Alias of tnom.
59	`tr (deg. C)`	Alias of tnom.
60	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`the3d (V^-1)`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
17	`etathe3d`	Temperature scaling exponent for THE3D.
18	`mexpd`	Smoothing factor for transition from linear to quasi-saturation regime.
19	`alp`	Factor for channel length modulation.
20	`vp (V)`	Characteristic voltage of channel length modulation.
21	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
22	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
23	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
24	`ssf (V^-1/2)`	Factor for static feedback.
25	`a1ch`	Factor of channel weak avalanche current, at reference temperature.
26	`a2ch (V)`	Exponent of channel weak avalanche current.
27	`a3ch`	Factor of the drain-source voltage above which channel weak avalanche occurs.
28	`a1dr`	Factor of drift weak avalanche current, at reference temperature.
29	`a2dr (V)`	Exponent of drift weak avalanche current.
30	`a3dr`	Factor of the drain-source voltage above which drift weak avalanche occurs.
31	`cox (F)`	Oxide capacitance for the intrinsic channel region.
32	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
33	`cgdo (F)`	Gate-to-drain overlap capacitance.
34	`cgso (F)`	Gate-to-source overlap capacitance.
35	`nt (J)`	Coefficient of thermal noise, at reference temperature.
36	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
37	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
38	`nfc (V^-1)`	Third coefficient of flicker noise.
39	`tox (m)`	Thickness of the oxide above the channel region.
40	`int_s`
41	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Saturation voltage of channel region at actual bias.
13	`vddisat (V)`	Saturation voltage of drift region at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`u`	Transistor gain (gm/gds).
34	`rout (`Ω`)`	Small-signal output resistance (1/gds).
35	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
36	`beff (A/V`²`)`	Gain factor.
37	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
38	`gmmos (A/V)`	Transconductance of channel region.
39	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
40	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
41	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
42	`mos_region=SUBTHRESHOLD`
43	`diode_region=ON`

Parameter Index

a1ch M-36	coxd O-32	mo O-23	the1acc M-22
a1ch O-25	csb OP-28	mos_region I-4	the1acc O-12
a1dr M-40	csd OP-25	mos_region OP-42	the2 M-23
a1dr O-28	csg OP-26	msdibl M-33	the2 O-13
a2ch M-38	css OP-27	msdibl O-22	the3 M-24
a2ch O-26	diode_region I-5	mult I-1	the3 O-14
a2dr M-42	diode_region OP-43	nfa M-49	the3d M-27
a2dr O-29	dta M-53	nfa O-36	the3d O-16
a3ch M-39	etabet M-15	nfb M-50	tnom M-58
a3ch O-27	etabetacc M-17	nfb O-37	tox M-52
a3dr M-43	etard M-19	nfc M-51	tox O-39
a3dr O-30	etathe3 M-25	nfc O-38	tr M-59
alp M-30	etathe3d M-28	nt M-48	tref M-3
alp O-19	etathe3d O-17	nt O-35	trise I-6
beff OP-36	fknee OP-41	paramchk M-2	type M-54
bet M-14	fug OP-37	phib M-10	u OP-33
bet O-7	gds OP-16	phib O-5	vbds M-57
betacc M-16	gm OP-14	phibd M-12	vbox M-56
betacc O-8	gmb OP-15	phibd O-6	vddisat OP-13
cbb OP-32	gmmos OP-38	rd M-18	vdiseff OP-11
cbd OP-29	iavl OP-2	rd O-9	vdissat OP-12
cbg OP-30	ids OP-1	region I-2	vds OP-3
cbs OP-31	imax M-55	rout OP-34	vearly OP-35
cdb OP-20	int_d O-41	sdibl M-32	vfb M-4
cdd OP-17	int_s O-40	sdibl O-21	vfb O-1
cdg OP-18	ko M-8	simkitver M-60	vfbd M-6
cds OP-19	ko O-3	sqrtsff OP-40	vfbd O-2
cgb OP-24	kod M-9	sqrtsfw OP-39	vgs OP-4
cgd OP-21	kod O-4	ssf M-35	vgt OP-9
cgdo M-46	lamd M-20	ssf O-24	vp M-31
cgdo O-33	lamd O-10	sta1ch M-37	vp O-20
cgg OP-22	level M-1	sta1dr M-41	vsb OP-5
cgs OP-23	m I-3	stphib M-11	vth OP-8
cgso M-47	mexp M-26	stphibd M-13	vto OP-6
cgso O-34	mexp O-15	stvfb M-5	vtod OP-10
cox M-44	mexpd M-29	stvfbd M-7	vts OP-7
cox O-31	mexpd O-18	the1 M-21
coxd M-45	mo M-34	the1 O-11

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002et)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
3	`m=1`	Alias of mult.
4	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2002et parameter=value ...

Model Parameters

1	`evel=2e+03`	Must be 2002.
2	`paramchk=0`	Level of clip warning info.
3	`tref=25 deg. C`	Reference temperature.
4	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
5	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
6	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
7	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
8	`ko=1.6 V^1/2`	Body factor of the channel region.
9	`kod=1 V^1/2`	Body factor of the drift region.
10	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
11	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
12	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
13	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
14	`bet=0.0014 A/V`²	Gain factor of the channel region, at reference temperature.
15	`etabet=1.6`	Temperature scaling exponent for BET.
16	`betacc=0.0014 A/V`^-2
		Gain factor for accumulation in the drift region, at reference temperature.
17	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
18	`rd=200` Ω	On-resistance of the drift region, at reference temperature.
19	`etard=1.5`	Temperature scaling exponent for RD.
20	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
21	`the1=0.09 V^-1`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
22	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
23	`the2=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
24	`the3=0.4 V^-1`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
25	`etathe3=1`	Temperature scaling exponent for THE3.
26	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
27	`the3d=0 V^-1`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
28	`etathe3d=1`	Temperature scaling exponent for THE3D.
29	`mexpd=2`	Smoothing factor for transition from linear to quasi-saturation regime.
30	`alp=0.002`	Factor for channel length modulation.
31	`vp=0.05 V`	Characteristic voltage of channel length modulation.
32	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
33	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
34	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
35	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
36	`a1ch=15`	Factor of channel weak avalanche current, at reference temperature.
37	`sta1ch=0 K^-1`	Temperature scaling coefficient for A1CH.
38	`a2ch=73 V`	Exponent of channel weak avalanche current.
39	`a3ch=0.8`	Factor of the drain-source voltage above which channel weak avalanche occurs.
40	`a1dr=15`	Factor of drift weak avalanche current, at reference temperature.
41	`sta1dr=0 K^-1`	Temperature scaling coefficient for A1DR.
42	`a2dr=73 V`	Exponent of drift weak avalanche current.
43	`a3dr=0.8`	Factor of the drain-source voltage above which drift weak avalanche occurs.
44	`cox=1.5e-14 F`	Oxide capacitance for the intrinsic channel region.
45	`coxd=1.5e-14 F`	Oxide capacitance for the intrinsic drift region.
46	`cgdo=0 F`	Gate-to-drain overlap capacitance.
47	`cgso=0 F`	Gate-to-source overlap capacitance.
48	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
49	`nfa=7e+23 V^-1 m^-4`
		First coefficient of flicker noise.
50	`nfb=1e+07 V^-1 m`^-2
		Second coefficient of flicker noise.
51	`nfc=0 V^-1`	Third coefficient of flicker noise.
52	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
53	`dta=0 K`	Temperature offset to the ambient temperature.
54	`rth=300 K/W`	Thermal resistance.
55	`cth=3e-09 J/K`	Thermal capacitance.
56	`ath=0`	Temperature coefficient of the thermal resistance.
57	`type=n`	Transistor gender. Possible values are `n` and `p`.
58	`imax=1000 A`	Explosion current.
59	`vbox=0.0 V`	Oxide breakdown voltage.
60	`vbds=0.0 V`	Drain-source breakdown voltage.
61	`tnom (deg. C)`	Alias of tnom.
62	`tr (deg. C)`	Alias of tnom.
63	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`the3d (V^-1)`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
17	`etathe3d`	Temperature scaling exponent for THE3D.
18	`mexpd`	Smoothing factor for transition from linear to quasi-saturation regime.
19	`alp`	Factor for channel length modulation.
20	`vp (V)`	Characteristic voltage of channel length modulation.
21	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
22	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
23	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
24	`ssf (V^-1/2)`	Factor for static feedback.
25	`a1ch`	Factor of channel weak avalanche current, at reference temperature.
26	`a2ch (V)`	Exponent of channel weak avalanche current.
27	`a3ch`	Factor of the drain-source voltage above which channel weak avalanche occurs.
28	`a1dr`	Factor of drift weak avalanche current, at reference temperature.
29	`a2dr (V)`	Exponent of drift weak avalanche current.
30	`a3dr`	Factor of the drain-source voltage above which drift weak avalanche occurs.
31	`cox (F)`	Oxide capacitance for the intrinsic channel region.
32	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
33	`cgdo (F)`	Gate-to-drain overlap capacitance.
34	`cgso (F)`	Gate-to-source overlap capacitance.
35	`nt (J)`	Coefficient of thermal noise, at reference temperature.
36	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
37	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
38	`nfc (V^-1)`	Third coefficient of flicker noise.
39	`tox (m)`	Thickness of the oxide above the channel region.
40	`rth (K/W)`	Thermal resistance.
41	`cth (J/K)`	Thermal capacitance.
42	`int_s`
43	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Saturation voltage of channel region at actual bias.
13	`vddisat (V)`	Saturation voltage of drift region at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`u`	Transistor gain (gm/gds).
34	`rout (`Ω`)`	Small-signal output resistance (1/gds).
35	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
36	`beff (A/V`²`)`	Gain factor.
37	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
38	`gmmos (A/V)`	Transconductance of channel region.
39	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
40	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
41	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
42	`Pdiss (W)`	Dissipation.
43	`TK (K)`	Actual temperature.
44	`pwr (W)`	Power.

Parameter Index

Pdiss OP-42	cox M-44	mo M-34	the1 O-11
TK OP-43	cox O-31	mo O-23	the1acc M-22
a1ch M-36	coxd M-45	msdibl M-33	the1acc O-12
a1ch O-25	coxd O-32	msdibl O-22	the2 M-23
a1dr M-40	csb OP-28	mult I-1	the2 O-13
a1dr O-28	csd OP-25	nfa M-49	the3 M-24
a2ch M-38	csg OP-26	nfa O-36	the3 O-14
a2ch O-26	css OP-27	nfb M-50	the3d M-27
a2dr M-42	cth M-55	nfb O-37	the3d O-16
a2dr O-29	cth O-41	nfc M-51	tnom M-61
a3ch M-39	dta M-53	nfc O-38	tox M-52
a3ch O-27	etabet M-15	nt M-48	tox O-39
a3dr M-43	etabetacc M-17	nt O-35	tr M-62
a3dr O-30	etard M-19	paramchk M-2	tref M-3
alp M-30	etathe3 M-25	phib M-10	trise I-4
alp O-19	etathe3d M-28	phib O-5	type M-57
ath M-56	etathe3d O-17	phibd M-12	u OP-33
beff OP-36	fknee OP-41	phibd O-6	vbds M-60
bet M-14	fug OP-37	pwr OP-44	vbox M-59
bet O-7	gds OP-16	rd M-18	vddisat OP-13
betacc M-16	gm OP-14	rd O-9	vdiseff OP-11
betacc O-8	gmb OP-15	region I-2	vdissat OP-12
cbb OP-32	gmmos OP-38	rout OP-34	vds OP-3
cbd OP-29	iavl OP-2	rth M-54	vearly OP-35
cbg OP-30	ids OP-1	rth O-40	vfb M-4
cbs OP-31	imax M-58	sdibl M-32	vfb O-1
cdb OP-20	ko M-8	sdibl O-21	vfbd M-6
cdd OP-17	ko O-3	sqrtsff OP-40	vfbd O-2
cdg OP-18	kod M-9	sqrtsfw OP-39	vgs OP-4
cds OP-19	kod O-4	ssf M-35	vgt OP-9
cgb OP-24	lamd M-20	ssf O-24	vp M-31
cgd OP-21	lamd O-10	sta1ch M-37	vp O-20
cgdo M-46	level M-1	sta1dr M-41	vsb OP-5
cgdo O-33	m I-3	stphib M-11	vth OP-8
cgg OP-22	mexp M-26	stphibd M-13	vto OP-6
cgs OP-23	mexp O-15	stvfb M-5	vtod OP-10
cgso M-47	mexpd M-29	stvfbd M-7	vts OP-7
cgso O-34	mexpd O-18	the1 M-21

Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002t)

This is SimKit 3.7.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`w=2e-05 m`	Drawn width of the channel region.
3	`wd=2e-05 m`	Drawn width of the drift region.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`
8	`trise=0`	Temperature rise from ambient.

Model Definition

model modelName mos2002t parameter=value ...

Model Parameters

1	`level=2e+03`	Must be 2002.
2	`paramchk=0`	Level of clip warning info.
3	`wvar=0 m`	Width offset of the channel region.
4	`wdvar=0 m`	Width offset of the drift region.
5	`tref=25 deg. C`	Reference temperature.
6	`vfb=-1 V`	Flatband voltage of the channel region, at reference temperature.
7	`stvfb=0 V/K`	Temperature scaling coefficient for VFB.
8	`vfbd=-0.1 V`	Flatband voltage of the drift region, at reference temperature.
9	`stvfbd=0 V/K`	Temperature scaling coefficient for the flatband voltage of the drift region.
10	`kor=1.6 V^1/2`	Body factor of the channel region of an infinitely wide transistor.
11	`swko=0`	Width scaling coefficient for KO.
12	`kodr=1 V^1/2`	Body factor of the drift region of an infinitely wide transistor.
13	`swkod=0`	Width scaling coefficient for the body factor of the drift region.
14	`phib=0.86 V`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
15	`stphib=-0.0012 V/K`
		Temperature scaling coefficient for PHIB.
16	`phibd=0.78 V`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
17	`stphibd=-0.0012 V/K`
		Temperature scaling coefficient for PHIBD.
18	`betw=7e-05 A/V`²	Gain factor of a channel region of 1 um wide, at reference temperature.
19	`etabet=1.6`	Temperature scaling exponent for BET.
20	`betaccw=7e-05 A/V`^-2
		Gain factor of drift region of 1 um wide, at reference temperature.
21	`etabetacc=1.5`	Temperature scaling exponent for BETACC.
22	`rdw=4e+03` Ω	On-resistance of a drift region of 1 um wide, at reference temperature.
23	`etard=1.5`	Temperature scaling exponent for RD.
24	`lamd=0.2`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
25	`the1r=0.09 V^-1`	Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
26	`swthe1=0`	Width scaling coefficient for THE1.
27	`the1acc=0.02 V^-1`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
28	`the2r=0.03 V^(-1/2)`
		Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
29	`swthe2=0`	Width scaling coefficient for THE2.
30	`the3r=0.4 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
31	`etathe3=1`	Temperature scaling exponent for THE3.
32	`swthe3=0`	Width scaling coefficient for THE3.
33	`mexp=2`	Smoothing factor for transition from linear to saturation regime.
34	`the3dr=0 V^-1`	Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
35	`etathe3d=1`	Temperature scaling exponent for THE3D.
36	`swthe3d=0`	Width scaling coefficient for THE3D.
37	`mexpd=2`	Smoothing factor for transition from linear to quasi-saturation regime.
38	`alp=0.002`	Factor for channel length modulation.
39	`vp=0.05 V`	Characteristic voltage of channel length modulation.
40	`sdibl=0.001 V^(-1/2)`
		Factor for drain-induced barrier lowering.
41	`msdibl=3`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
42	`mo=0 V`	Parameter for the (short-channel) sub-threshold slope.
43	`ssf=1e-12 V^(-1/2)`
		Factor for static feedback.
44	`a1chr=15`	Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.
45	`sta1ch=0 K^-1`	Temperature scaling coefficient for A1CH.
46	`swa1ch=0`	Width scaling coefficient for A1CH.
47	`a2ch=73 V`	Exponent of channel weak avalanche current.
48	`a3ch=0.8`	Factor of the drain-source voltage above which channel weak avalanche occurs.
49	`a1drr=15`	Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.
50	`sta1dr=0 K^-1`	Temperature scaling coefficient for A1DR.
51	`swa1dr=0`	Width scaling coefficient for A1DR.
52	`a2dr=73 V`	Exponent of drift weak avalanche current.
53	`a3dr=0.8`	Factor of the drain-source voltage above which drift weak avalanche occurs.
54	`coxw=7.5e-16 F`	Oxide capacitance for an intrinsic channel region of 1um wide.
55	`coxdw=7.5e-16 F`	Oxide capacitance for an intrinsic drift region of 1um wide.
56	`cgdow=0 F`	Gate-to-drain overlap capacitance for a drift region of 1 um wide.
57	`cgsow=0 F`	Gate-to-source overlap capacitance for a channel region of 1 um wide.
58	`nt=1.65e-20 J`	Coefficient of thermal noise, at reference temperature.
59	`nfaw=1.4e+25 V^-1 m^-4`
		First coefficient of flicker noise for a channel region of 1 um wide.
60	`nfbw=2e+08 V^-1 m`^-2
		Second coefficient of flicker noise for a channel region of 1 um wide.
61	`nfcw=0 V^-1`	Third coefficient of flicker noise for a channel region of 1 um wide.
62	`tox=3.8e-08 m`	Thickness of the oxide above the channel region.
63	`dta=0 K`	Temperature offset to the ambient temperature.
64	`rth=300 K/W`	Thermal resistance.
65	`cth=3e-09 J/K`	Thermal capacitance.
66	`ath=0`	Temperature coefficient of the thermal resistance.
67	`type=n`	Transistor gender. Possible values are `n` and `p`.
68	`imax=1000 A`	Explosion current.
69	`vbox=0.0 V`	Oxide breakdown voltage.
70	`vbds=0.0 V`	Drain-source breakdown voltage.
71	`tnom (deg. C)`	Alias of tnom.
72	`tr (deg. C)`	Alias of tnom.
73	`simkitver=3.4`

Output Parameters

1	`vfb (V)`	Flatband voltage of the channel region, at reference temperature.
2	`vfbd (V)`	Flatband voltage of the drift region.
3	`ko (V^1/2)`	Body factor of the channel region.
4	`kod (V^1/2)`	Body factor of the drift region.
5	`phib (V)`	Surface potential at the onset of strong inversion in the channel region, at reference temperature.
6	`phibd (V)`	Surface potential at the onset of strong inversion in the drift region, at reference temperature.
7	`bet (A/V`²`)`	Gain factor of the channel region, at reference temperature.
8	`betacc (A/V`²`)`	Gain factor for accumulation in the drift region, at reference temperature.
9	`rd (`Ω`)`	On-resistance of the drift region, at reference temperature.
10	`lamd`	Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
11	`the1 (V^-1)`	Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
12	`the1acc (V^-1)`	Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
13	`the2 (V^-1/2)`	Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
14	`the3 (V^-1)`	Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
15	`mexp`	Smoothing factor for transition from linear to saturation regime.
16	`the3d (V^-1)`	Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
17	`etathe3d`	Temperature scaling exponent for THE3D.
18	`mexpd`	Smoothing factor for transition from linear to quasi-saturation regime.
19	`alp`	Factor for channel length modulation.
20	`vp (V)`	Characteristic voltage of channel length modulation.
21	`sdibl (V^-1/2)`	Factor for drain-induced barrier lowering.
22	`msdibl`	Exponent for the drain-induced barrier lowering dependence on the backgate bias.
23	`mo (V)`	Parameter for the (short-channel) sub-threshold slope.
24	`ssf (V^-1/2)`	Factor for static feedback.
25	`a1ch`	Factor of channel weak avalanche current, at reference temperature.
26	`a2ch (V)`	Exponent of channel weak avalanche current.
27	`a3ch`	Factor of the drain-source voltage above which channel weak avalanche occurs.
28	`a1dr`	Factor of drift weak avalanche current, at reference temperature.
29	`a2dr (V)`	Exponent of drift weak avalanche current.
30	`a3dr`	Factor of the drain-source voltage above which drift weak avalanche occurs.
31	`cox (F)`	Oxide capacitance for the intrinsic channel region.
32	`coxd (F)`	Oxide capacitance for the intrinsic drift region.
33	`cgdo (F)`	Gate-to-drain overlap capacitance.
34	`cgso (F)`	Gate-to-source overlap capacitance.
35	`nt (J)`	Coefficient of thermal noise, at reference temperature.
36	`nfa (V^-1 m^-4)`	First coefficient of flicker noise.
37	`nfb (V^-1 m`^-2`)`	Second coefficient of flicker noise.
38	`nfc (V^-1)`	Third coefficient of flicker noise.
39	`tox (m)`	Thickness of the oxide above the channel region.
40	`rth (K/W)`	Thermal resistance.
41	`cth (J/K)`	Thermal capacitance.
42	`int_s`
43	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain current, excluding avalanche and tunnel currents.
2	`iavl (A)`	Substrate current due to weak-avalanche.
3	`vds (V)`	Drain-source voltage.
4	`vgs (V)`	Gate-source voltage.
5	`vsb (V)`	Source-bulk voltage.
6	`vto (V)`	Zero-bias threshold voltage.
7	`vts (V)`	Threshold voltage including back-bias effects.
8	`vth (V)`	Threshold voltage including back-bias and drain-bias effects.
9	`vgt (V)`	Effective gate drive voltage including back-bias and drain voltage effects.
10	`vtod (V)`	Threshold voltage of the drift region.
11	`vdiseff (V)`	Effective internal drain-to-source voltage at actual bias.
12	`vdissat (V)`	Saturation voltage of channel region at actual bias.
13	`vddisat (V)`	Saturation voltage of drift region at actual bias.
14	`gm (A/V)`	Transconductance (d ids / d vgs).
15	`gmb (A/V)`	Substrate-transconductance (d ids / d vbs).
16	`gds (A/V)`	Output conductance (d ids / d vds).
17	`cdd (F)`	Capacitance (d qd / d vd).
18	`cdg (F)`	Capacitance (- d qd / d vg).
19	`cds (F)`	Capacitance (- d qd / d vs).
20	`cdb (F)`	Capacitance (- d qd / d vb).
21	`cgd (F)`	Capacitance (- d qg / d vd).
22	`cgg (F)`	Capacitance (d qg / d vg).
23	`cgs (F)`	Capacitance (- d qg / d vs).
24	`cgb (F)`	Capacitance (- d qg / d vb).
25	`csd (F)`	Capacitance (- d qs / d vd).
26	`csg (F)`	Capacitance (- d qs / d vg).
27	`css (F)`	Capacitance (d qs / d vs).
28	`csb (F)`	Capacitance (- d qs / d vb).
29	`cbd (F)`	Capacitance (- d qb / d vd).
30	`cbg (F)`	Capacitance (- d qb / d vg).
31	`cbs (F)`	Capacitance (- d qb / d vs).
32	`cbb (F)`	Capacitance (d qb / d vb).
33	`weff (m)`	Effective channel width for geometrical models.
34	`wdeff (m)`	Effective drift region width for geometrical model.
35	`u`	Transistor gain (gm/gds).
36	`rout (`Ω`)`	Small-signal output resistance (1/gds).
37	`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
38	`beff (A/V`²`)`	Gain factor.
39	`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
40	`gmmos (A/V)`	Transconductance of channel region.
41	`sqrtsfw (V/Hz^1/2)`
		Input-referred RMS white noise voltage density.
42	`sqrtsff (V/Hz^1/2)`
		Input-referred RMS white noise voltage density at 1 kHz.
43	`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
44	`Pdiss (W)`	Dissipation.
45	`TK (K)`	Actual temperature.
46	`pwr (W)`	Power.

Parameter Index

Pdiss OP-44	csb OP-28	nfbw M-60	the2r M-28
TK OP-45	csd OP-25	nfc O-38	the3 O-14
a1ch O-25	csg OP-26	nfcw M-61	the3d O-16
a1chr M-44	css OP-27	nt M-58	the3dr M-34
a1dr O-28	cth M-65	nt O-35	the3r M-30
a1drr M-49	cth O-41	paramchk M-2	tnom M-71
a2ch M-47	dta M-63	phib M-14	tox M-62
a2ch O-26	etabet M-19	phib O-5	tox O-39
a2dr M-52	etabetacc M-21	phibd M-16	tr M-72
a2dr O-29	etard M-23	phibd O-6	tref M-5
a3ch M-48	etathe3 M-31	pwr OP-46	trise I-6
a3ch O-27	etathe3d M-35	rd O-9	type M-67
a3dr M-53	etathe3d O-17	rdw M-22	u OP-35
a3dr O-30	fknee OP-43	region I-4	vbds M-70
alp M-38	fug OP-39	rout OP-36	vbox M-69
alp O-19	gds OP-16	rth M-64	vddisat OP-13
ath M-66	gm OP-14	rth O-40	vdiseff OP-11
beff OP-38	gmb OP-15	sdibl M-40	vdissat OP-12
bet O-7	gmmos OP-40	sdibl O-21	vds OP-3
betacc O-8	iavl OP-2	sqrtsff OP-42	vearly OP-37
betaccw M-20	ids OP-1	sqrtsfw OP-41	vfb M-6
betw M-18	imax M-68	ssf M-43	vfb O-1
cbb OP-32	ko O-3	ssf O-24	vfbd M-8
cbd OP-29	kod O-4	sta1ch M-45	vfbd O-2
cbg OP-30	kodr M-12	sta1dr M-50	vgs OP-4
cbs OP-31	kor M-10	stphib M-15	vgt OP-9
cdb OP-20	lamd M-24	stphibd M-17	vp M-39
cdd OP-17	lamd O-10	stvfb M-7	vp O-20
cdg OP-18	level M-1	stvfbd M-9	vsb OP-5
cds OP-19	m I-5	swa1ch M-46	vth OP-8
cgb OP-24	mexp M-33	swa1dr M-51	vto OP-6
cgd OP-21	mexp O-15	swko M-11	vtod OP-10
cgdo O-33	mexpd M-37	swkod M-13	vts OP-7
cgdow M-56	mexpd O-18	swthe1 M-26	w I-2
cgg OP-22	mo M-42	swthe2 M-29	wd I-3
cgs OP-23	mo O-23	swthe3 M-32	wdeff OP-34
cgso O-34	msdibl M-41	swthe3d M-36	wdvar M-4
cgsow M-57	msdibl O-22	the1 O-11	weff OP-33
cox O-31	mult I-1	the1acc M-27	wvar M-3
coxd O-32	nfa O-36	the1acc O-12
coxdw M-55	nfaw M-59	the1r M-25
coxw M-54	nfb O-37	the2 O-13

MOS Model 31, Level 3100 (mos3100)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos3100 parameter=value ...

Model Parameters

1	`level=3.1e+03`	Transistor level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`ron=1` Ω	Ohmic resistance at zero bias.
7	`rsat=1` Ω	Space charge resistance at zero bias.
8	`vsat=10 V`	Critical drain-source voltage for hot carriers.
9	`psat=1`	Velocity saturation coefficient.
10	`vp=-1 V`	Pinch off voltage at zero gate and substrate voltages.
11	`tox=-1 m`	Gate oxide thickness.
12	`dch=1e+21 m`^-3	Doping level channel.
13	`dsub=1e+21 m`^-3	Doping level substrate.
14	`vsub=0.6 V`	Substrate diffusion voltage.
15	`vgap=1.2 V`	Bandgap voltage channel.
16	`cgate=0 F`	Gate capacitance at zero bias.
17	`csub=0 F`	Substrate capacitance at zero bias.
18	`tausc=0 s`	Space charge transit time of the channel.
19	`ach=0`	Temperature coefficient resistivity of the channel.
20	`achmod=0`	Parameter to switch to extended temperature scaling.
21	`achron=0`	Temperature coefficient of ohmic resistance at zero bias.
22	`achvsat=0`	Temperature coefficient of critical drain-source voltage for hot carriers.
23	`achrsat=0`	Temperature coefficient of space charge resistance at zero bias.
24	`tref=25 deg. C`	Reference temperature.
25	`dta=0 deg. C`	Temperature offset of the device.
26	`type=n`	Transistor gender. Possible values are `n` and `p`.
27	`imax=1000 A`	Explosion current.
28	`tnom (deg. C)`	Alias of tnom.
29	`tr (deg. C)`	Alias of tnom.
30	`simkitver=3.4`
31	`compatible=spectre`	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain source current (including velocity saturation).
2	`vds (V)`	Drain source voltage.
3	`vgs (V)`	Gate source voltage.
4	`vbs (V)`	Bulk source voltage.
5	`vp (V)`	Channel pinch off voltage.
6	`gm (A/V)`	Transconductance (dIds/dVg).
7	`gmb (A/V)`	Bulk transconductance (dIds/dVb).
8	`gds (A/V)`	Output conductance (dIds/dVd).
9	`qg (C)`	Gate charge.
10	`cgd (F)`	Gate charge dependence on drain voltage (- dQg/dVd).
11	`cgg (F)`	Gate charge dependence on gate voltage (dQg/dVg).
12	`cgs (F)`	Gate charge dependence on source voltage (-dQg/dVs).
13	`cgb (F)`	Gate charge dependence on bulk voltage (-dQg/dVb).
14	`qb (C)`	Bulk charge.
15	`cbd (F)`	Bulk charge dependence on drain voltage (-dQb/dVd).
16	`cbg (F)`	Bulk charge dependence on gate voltage (-dQb/dVg).
17	`cbs (F)`	Bulk charge dependence on source voltage (-dQb/dVs).
18	`cbb (F)`	Bulk charge dependence on bulk voltage (dQb/dVb).
19	`qd (C)`	Drain charge.
20	`cdd (F)`	Drain charge dependence on drain voltage (dQd/dVd).
21	`cdg (F)`	Drain charge dependence on gate voltage (-dQd/dVg).
22	`cds (F)`	Drain charge dependence on source voltage (-dQd/dVs).
23	`cdb (F)`	Drain charge dependence on bulk voltage (-dQd/dVb).
24	`qs (C)`	Source charge.
25	`csd (F)`	Source charge dependence on drain voltage (-dQs/dVd).
26	`csg (F)`	Source charge dependence on gate voltage (-dQs/dVg).
27	`css (F)`	Source charge dependence on source voltage (dQs/dVs).
28	`csb (F)`	Source charge dependence on bulk voltage (-dQs/dVb).
29	`u`	Transistor gain (gm/gds).
30	`rout (`Ω`)`	Small signal output resistance (1/gds).
31	`vearly (V)`	Equivalent early voltage (\|Ids\|/gds).
32	`iohm (A)`	Drain source current excluding velocity saturation.
33	`ihc (A)`	Critical current for velocity saturation.
34	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
35	`mos_region=SUBTHRESHOLD`
		MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.

Parameter Index

ach M-26	csd OP-25	printscaled I-2	type M-33
achmod M-27	csg OP-26	psat M-16	u OP-29
achron M-28	css OP-27	qb OP-14	vballmsg M-9
achrsat M-30	csub M-24	qd OP-19	vbdbhigh M-6
achvsat M-29	ctype OP-34	qg OP-9	vbdblow M-5
cbb OP-18	dch M-19	qs OP-24	vbds M-4
cbd OP-15	dsub M-20	region I-4	vbox M-3
cbg OP-16	dta M-32	ron M-13	vbs OP-4
cbs OP-17	gds OP-8	rout OP-30	vbsbhigh M-8
cdb OP-23	gm OP-6	rsat M-14	vbsblow M-7
cdd OP-20	gmb OP-7	stop M-12	vds OP-2
cdg OP-21	ids OP-1	tausc M-25	vearly OP-31
cds OP-22	ihc OP-33	tdelay M-11	vgap M-22
cgate M-23	iohm OP-32	tempeff O-1	vgs OP-3
cgb OP-13	level M-1	tmin M-10	vp M-17
cgd OP-10	m I-5	tnom M-34	vp OP-5
cgg OP-11	meff O-2	tox M-18	vsat M-15
cgs OP-12	mos_region OP-35	tr M-35	vsub M-21
compatible M-36	mult I-1	tref M-31
csb OP-28	paramchk M-2	trise I-3

MOS Model 31, Level 3100 (mos3100t)

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so

Instance Definition

Name  d  g  s  b  dt ModelName parameter=value ...

Instance Parameters

1	`mult=1`	Number of devices in parallel.
2	`printscaled=0`	Print scaled parameter info if value not equal to zero.
3	`trise=0 K`	Difference between the local ambient and global ambient temperature.
4	`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
5	`m=1`	Alias of mult.
6	`mos_region=SUBTHRESHOLD`
7	`diode_region=ON`

Model Definition

model modelName mos3100t parameter=value ...

Model Parameters

1	`level=3.1e+03`	Transistor level.
2	`paramchk=0`	Level of clip warning info.
3	`vbox=0 V`	Oxide breakdown voltage.
4	`vbds=0 V`	Drain-source breakdown voltage.
5	`tmin=0 s`	Ovcheck tmin value.
6	`ron=1` Ω	Ohmic resistance at zero bias.
7	`rsat=1` Ω	Space charge resistance at zero bias.
8	`vsat=10 V`	Critical drain-source voltage for hot carriers.
9	`psat=1`	Velocity saturation coefficient.
10	`vp=-1 V`	Pinch off voltage at zero gate and substrate voltages.
11	`tox=-1 m`	Gate oxide thickness.
12	`dch=1e+21 m`^-3	Doping level channel.
13	`dsub=1e+21 m`^-3	Doping level substrate.
14	`vsub=0.6 V`	Substrate diffusion voltage.
15	`vgap=1.2 V`	Bandgap voltage channel.
16	`cgate=0 F`	Gate capacitance at zero bias.
17	`csub=0 F`	Substrate capacitance at zero bias.
18	`tausc=0 s`	Space charge transit time of the channel.
19	`ach=0`	Temperature coefficient resistivity of the channel.
20	`achmod=0`	Parameter to switch to extended temperature scaling.
21	`achron=0`	Temperature coefficient of ohmic resistance at zero bias.
22	`achvsat=0`	Temperature coefficient of critical drain-source voltage for hot carriers.
23	`achrsat=0`	Temperature coefficient of space charge resistance at zero bias.
24	`tref=25 deg. C`	Reference temperature.
25	`dta=0 deg. C`	Temperature offset of the device.
26	`rth=300 K/W`	Thermal resistance.
27	`cth=3e-09 J/K`	Thermal capacitance.
28	`ath=0`	Temperature coefficient of the thermal resistance.
29	`type=n`	Transistor gender. Possible values are `n` and `p`.
30	`imax=1000 A`	Explosion current.
31	`tnom (deg. C)`	Alias of tnom.
32	`tr (deg. C)`	Alias of tnom.
33	`simkitver=3.4`
34	`compatible=spectre`	Make device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `hspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`int_s`
4	`int_d`

Operating-Point Parameters

1	`ids (A)`	Drain source current (including velocity saturation).
2	`vds (V)`	Drain source voltage.
3	`vgs (V)`	Gate source voltage.
4	`vbs (V)`	Bulk source voltage.
5	`vp (V)`	Channel pinch off voltage.
6	`gm (A/V)`	Transconductance (dIds/dVg).
7	`gmb (A/V)`	Bulk transconductance (dIds/dVb).
8	`gds (A/V)`	Output conductance (dIds/dVd).
9	`qg (C)`	Gate charge.
10	`cgd (F)`	Gate charge dependence on drain voltage (- dQg/dVd).
11	`cgg (F)`	Gate charge dependence on gate voltage (dQg/dVg).
12	`cgs (F)`	Gate charge dependence on source voltage (-dQg/dVs).
13	`cgb (F)`	Gate charge dependence on bulk voltage (-dQg/dVb).
14	`qb (C)`	Bulk charge.
15	`cbd (F)`	Bulk charge dependence on drain voltage (-dQb/dVd).
16	`cbg (F)`	Bulk charge dependence on gate voltage (-dQb/dVg).
17	`cbs (F)`	Bulk charge dependence on source voltage (-dQb/dVs).
18	`cbb (F)`	Bulk charge dependence on bulk voltage (dQb/dVb).
19	`qd (C)`	Drain charge.
20	`cdd (F)`	Drain charge dependence on drain voltage (dQd/dVd).
21	`cdg (F)`	Drain charge dependence on gate voltage (-dQd/dVg).
22	`cds (F)`	Drain charge dependence on source voltage (-dQd/dVs).
23	`cdb (F)`	Drain charge dependence on bulk voltage (-dQd/dVb).
24	`qs (C)`	Source charge.
25	`csd (F)`	Source charge dependence on drain voltage (-dQs/dVd).
26	`csg (F)`	Source charge dependence on gate voltage (-dQs/dVg).
27	`css (F)`	Source charge dependence on source voltage (dQs/dVs).
28	`csb (F)`	Source charge dependence on bulk voltage (-dQs/dVb).
29	`u`	Transistor gain (gm/gds).
30	`rout (`Ω`)`	Small signal output resistance (1/gds).
31	`vearly (V)`	Equivalent early voltage (\|Ids\|/gds).
32	`iohm (A)`	Drain source current excluding velocity saturation.
33	`ihc (A)`	Critical current for velocity saturation.
34	`Pdiss (W)`	Dissipation.
35	`TK (K)`	Actual temperature.
36	`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
37	`pwr (W)`	Power.
38	`mos_region`	MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.

Parameter Index

Pdiss OP-34	compatible M-39	mult I-1	tr M-38
TK OP-35	csb OP-28	paramchk M-2	tref M-31
ach M-26	csd OP-25	printscaled I-2	trise I-3
achmod M-27	csg OP-26	psat M-16	type M-36
achron M-28	css OP-27	pwr OP-37	u OP-29
achrsat M-30	csub M-24	qb OP-14	vballmsg M-9
achvsat M-29	cth M-34	qd OP-19	vbdbhigh M-6
ath M-35	ctype OP-36	qg OP-9	vbdblow M-5
cbb OP-18	dch M-19	qs OP-24	vbds M-4
cbd OP-15	dsub M-20	region I-4	vbox M-3
cbg OP-16	dta M-32	ron M-13	vbs OP-4
cbs OP-17	gds OP-8	rout OP-30	vbsbhigh M-8
cdb OP-23	gm OP-6	rsat M-14	vbsblow M-7
cdd OP-20	gmb OP-7	rth M-33	vds OP-2
cdg OP-21	ids OP-1	stop M-12	vearly OP-31
cds OP-22	ihc OP-33	tausc M-25	vgap M-22
cgate M-23	iohm OP-32	tdelay M-11	vgs OP-3
cgb OP-13	level M-1	tempeff O-1	vp M-17
cgd OP-10	m I-5	tmin M-10	vp OP-5
cgg OP-11	meff O-2	tnom M-37	vsat M-15
cgs OP-12	mos_region OP-38	tox M-18	vsub M-21

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Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 19.1, January 2020

11

Philips Models

Diode Level 500 (dio500)

Sample Instance Statement

Sample Model Statement

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Operating-Point Parameters

Parameter Index

Lateral PNP Transistor (bjt301)

Sample Instance Statement:

Sample Model Statement:

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Structural parameters

Current parameters

Parasitic resistance parameters

Junction capacitance parameters

Temperature effects parameters

Noise model parameters

Operating-Point Parameters

Parameter Index

Lateral PNP Transistor (bjt500)

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Lateral PNP Transistor (bjt500t)

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Vertical NPN/PNP Transistor (bjt503)

Sample Instance Statement

Sample Model Statement:

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Operating-Point Parameters

Parameter Index

Compact Bipolar-Transistor Model (bjt504)

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Compact Bipolar-Transistor Model (bjt504t)

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Compact Bipolar-Transistor Model (bjt505)

Instance Definition

Instance Parameters

Model Definition

Model Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Compact Bipolar-Transistor Model (bjt505t)

Description

Instance Definition

Instance Parameters

Spectre Circuit Simulator Components and Device Models Reference
Product Version 19.1, January 2020