11
Philips Models
This chapter describes the component statements for the following models:
-
Diode Level 500 (dio500)
-
Lateral PNP Transistor (bjt301)
-
Lateral PNP Transistor (bjt500)
-
Lateral PNP Transistor (bjt500t)
-
Vertical NPN/PNP Transistor (bjt503)
-
Compact Bipolar-Transistor Model (bjt504)
-
Compact Bipolar-Transistor Model (bjt504t)
-
Compact Bipolar-Transistor Model (bjtd504)
-
Compact Bipolar-Transistor Model (bjtd504t)
-
Compact Bipolar-Transistor Model (bjt505)
-
Compact Bipolar-Transistor Model (bjt505t)
-
Compact Bipolar-Transistor Model (bjtd505)
-
Compact Bipolar-Transistor Model (bjtd505t)
-
Compact Bipolar-Transistor Model (bjtd3500)
-
Compact Bipolar-Transistor Model (bjtd3500t)
-
JFETIDG Model (jfetidg)
-
Long Channel JFET/MOSFET Model (mos30)
-
MOS Model 40, Level 40 (mos40t)
-
Long Channel JFET/MOSFET Model (mos3002)
-
Compact MOS-Transistor Model (mos705)
-
Compact MOS-Transistor Model (mos902)
-
Compact MOS-Transistor Model (mos903)
-
Compact MOS-Transistor Distortion Model (mos1100)
-
Compact MOS-Transistor Distortion Model (mos1100e)
-
MOS Model 11, Level 1101 (mos11010)
-
MOS Model 11, Level 1101 (mos11010t)
-
MOS Model 11, Level 1101 (mos11011)
-
MOS Model 11, Level 1101 (mos11011t)
-
MOS Model 11, Level 1101 (mos1101e)
-
MOS Model 11, Level 1101 (mos1101et)
-
MOS Model 11, Level 1102 (mos11020)
-
MOS Model 11, Level 1102 (mos11020t)
-
MOS Model 11, Level 1102 (mos11021)
-
MOS Model 11, Level 1102 (mos11021t)
-
MOS Model 11, Level 1102 (mos1102e)
-
MOS Model 11, Level 1102 (mos1102et)
-
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001)
-
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001e)
-
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001et)
-
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001t)
-
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002)
-
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002e)
-
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002et)
-
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002t)
-
MOS Model 31, Level 3100 (mos3100)
-
MOS Model 31, Level 3100 (mos3100t)
Diode Level 500 (dio500)
The dio500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is described in the Philips Bipolar Modelbook (Dec.93) as Diode level 500. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1994
In extension to the model book description a minimum conductance gmin is inserted between the diode nodes to aid convergence. The value of gmin is set by an options statement, default is gmin = 1.0e-12 S.
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the diode are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor, and a warning is printed.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement
d1 (pnode 0) phdiode area=2
Sample Model Statement
model phdiode dio500 is=3.5e-12 rs=26.3 n=2.7 imax=1e20 vlc=1.8 vbr=9.63 cj=2.65e-11 dta=12.88 tau=7.5e-10 tnom=25
Instance Definition
Name a k ModelName parameter=value ...
Instance Parameters
|
1
|
area=1.0
|
Multiplication factor.
|
|
2
|
mult
|
Alias of area factor.
|
|
3
|
m=1.0
|
Multiplicity factor.
|
|
4
|
region=fwd
|
Estimated DC operating region, which is used as a convergence aid. Possible values are fwd, rev or brk.
|
|
5
|
trise= (K)
|
Temperature rise from ambient
|
Model Definition
model modelName dio500 parameter=value ...
Model Parameters
|
1
|
is=7.13e-13 A
|
Saturation current.
|
|
2
|
n=1.044
|
Junction emission coefficient.
|
|
3
|
vlc=0.0 V
|
Voltage dependence at low forward currents.
|
|
4
|
vbr=7.459 V
|
Breakdown voltage.
|
|
5
|
emvbr=1.36e+06 V/cm
|
|
|
|
Electric field at breakdown.
|
|
6
|
csrh=7.44e-07 A/cm
|
|
|
|
Shockley-Read-Hall generation.
|
|
7
|
cbbt=3.255 A/V
|
Band to band tunneling.
|
|
8
|
ctat=3.31e-06 A/cm
|
|
|
|
Trap assisted tunneling.
|
|
9
|
rs=0.0 Ω
|
Series resistance.
|
|
10
|
tau=500.0e-12 s
|
Transit time.
|
|
11
|
cj=7.0e-12 F
|
Zero-bias depletion capacitance.
|
|
12
|
vd=0.9 V
|
Diffusion voltage.
|
|
13
|
p=0.4
|
Grading coefficient.
|
|
14
|
tref (C)
|
Reference temperature. Default set by option tnom.
|
|
15
|
tnom (C)
|
Alias of tref.
|
|
16
|
tr (C)
|
Alias of tref.
|
|
17
|
vg=1.206 V
|
Bandgap voltage.
|
|
18
|
ptrs=0.0
|
Power for temperature dependence of rs.
|
|
19
|
kf=0.0
|
Flickernoise coefficient.
|
|
20
|
af=1.0
|
Flickernoise exponent.
|
|
21
|
dta=0.0 K
|
Difference between device temperature and ambient temperature.
|
|
22
|
trise (K)
|
Alias of dta.
|
|
23
|
imax=1.0 A
|
Explosion current.
|
Operating-Point Parameters
|
1
|
vak (V)
|
Diode voltage, measured from anode to cathode (including rs).
|
|
2
|
id (A)
|
Total resistive diode current.
|
|
3
|
qd (Coul)
|
Diffusion charge.
|
|
4
|
qt (Coul)
|
Depletion charge.
|
|
5
|
rst (Ω)
|
Series resistance (temperature updated).
|
|
6
|
rl (Ω)
|
AC linearized resistance.
|
|
7
|
cl (F)
|
AC linearized capacitance.
|
|
8
|
ctotal (F)
|
AC linearized capacitance.
|
|
9
|
lx5 (F)
|
AC linearized capacitance.
|
|
10
|
pwr (W)
|
Power dissipation.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
af M-20
|
id OP-2
|
pwr OP-10
|
tref M-14
|
area I-1
|
imax M-23
|
qd OP-3
|
trise I-5
|
cbbt M-7
|
is M-1
|
qt OP-4
|
trise M-22
|
cj M-11
|
kf M-19
|
region I-4
|
vak OP-1
|
cl OP-7
|
lx5 OP-9
|
rl OP-6
|
vbr M-4
|
csrh M-6
|
m I-3
|
rs M-9
|
vd M-12
|
ctat M-8
|
mult I-2
|
rst OP-5
|
vg M-17
|
ctotal OP-8
|
n M-2
|
tau M-10
|
vlc M-3
|
dta M-21
|
p M-13
|
tnom M-15
|
|
emvbr M-5
|
ptrs M-18
|
tr M-16
|
|
Lateral PNP Transistor (bjt301)
The bjt301 model provides an extensive description of a lateral integrated circuit junction-isolated PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.93) as TPL level 301.
(c) Philips Electronics N.V. 1993
In extension to the model book description a minimum conductance gmin is inserted between the internal base and internal collector node, between the internal base and the internal emitter node, and between the external base and the substrate node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement:
q2 (minus net3 vcc) pnp_mod region=fwd area=1 m=1
Sample Model Statement:
model pnp_mod bjt301 type=pnp struct=lateral is=1e-14 bf=85 ilf=11e-9 ikf=95e-6 re=3.2 cje=0.352e-12
Instance Definition
Name c b e [s] ModelName parameter=value ...
Instance Parameters
|
1
|
area=1
|
Area factor.
|
|
2
|
mult=1
|
Alias of area factor.
|
|
3
|
m=1
|
Multiplicity factor.
|
|
4
|
region=fwd
|
Estimated DC operating region; used as a convergence aid. Possible values are off, fwd, rev, and sat.
|
|
5
|
trise=0.0 K
|
Temperature rise from ambient.
|
Model Definition
model modelName bjt301 parameter=value ...
Model Parameters
Structural parameters
|
1
|
type=pnp
|
Transistor type. Possible values are pnp or pnpl.
|
|
2
|
struct=lateral
|
Transistor structure. Possible values are lateral.
|
Current parameters
|
3
|
is=1.0e-15 A
|
Saturation current.
|
|
4
|
imax=1.0 A
|
Explosion current.
|
|
5
|
bf=100.0 A/A
|
Ideal forward common-emitter current gain (beta).
|
|
6
|
ilf=10.0e-9 A
|
Low-level knee-current of forward beta.
|
|
7
|
nlf=2.0
|
Emission coefficient of non-ideal forward base current.
|
|
8
|
ikf=100.0e-6 A
|
High-injection knee-current of forward beta.
|
|
9
|
nhf=1.0
|
Basewidening exponent.
|
|
10
|
veaf=50.0 V
|
Early voltage related to collector junction.
|
|
11
|
br=10.0 A/A
|
Ideal reverse common-collector current gain (beta).
|
|
12
|
ilr=10.0e-9 A
|
Low-level knee-current of reverse beta.
|
|
13
|
nlr=2.0
|
Emission coefficient of non-ideal reverse base current.
|
|
14
|
ikr=100.0e-6 A
|
High-injection knee-current of reverse beta.
|
|
15
|
iks=100.0e-6 A
|
High-injection current of substrate effect.
|
|
16
|
xcs=1.0
|
Current fraction of c-b-s transistor.
|
|
17
|
xes=0.01
|
Current fraction of e-b-s transistor.
|
Parasitic resistance parameters
|
18
|
rc=1.0 Ω
|
Collector resistance.
|
|
19
|
rbc=10.0 Ω
|
Constant part of base resistance.
|
|
20
|
rbv=10.0 Ω
|
Variable part of base resistance.
|
|
21
|
re=1.0 Ω
|
Emitter series resistance.
|
Junction capacitance parameters
|
22
|
taub=25.0e-9 s
|
Forward transit time related to neutral base.
|
|
23
|
taune=1.0e-9 s
|
Forward transit time related to neutral emitter in neutral e-b region.
|
|
24
|
mtau=1.0
|
Coefficient of current dependence of taune.
|
|
25
|
cje=100.0e-15 F
|
Zero bias emitter-base depletion capacitance.
|
|
26
|
vde=0.55 V
|
Emitter-base diffusion voltage.
|
|
27
|
pe=0.333
|
Emitter-base grading coefficient.
|
|
28
|
taur=100.0e-9 s
|
Ideal reverse transit time.
|
|
29
|
cjc=200.0e-15 F
|
Zero bias collector-base depletion capacitance.
|
|
30
|
vdc=0.55 V
|
Collector-base diffusion voltage.
|
|
31
|
pc=0.333
|
Collector-base grading coefficient.
|
|
32
|
cjs=1.0e-12 F
|
Zero bias substrate junction depletion capacitance.
|
|
33
|
vds=0.55 V
|
Substrate junction diffusion voltage.
|
|
34
|
ps=0.333
|
Substrate junction grading coefficient.
|
|
35
|
exphi=0.3
|
Excess phase shift.
|
|
36
|
fc=0.95
|
Coefficient for forward bias capacitance.
|
Temperature effects parameters
|
37
|
tref (C)
|
Reference temperature. Default set by option tnom.
|
|
38
|
tnom (C)
|
Alias of tref. Default set by option tnom.
|
|
39
|
dta=0.0 K
|
Difference between device temperature and ambient temperature.
|
|
40
|
trise=0.0 K
|
Alias of dta.
|
|
41
|
ptbf=0.0
|
Power for temperature dependence of bf.
|
|
42
|
ptbr=0.0
|
Power for temperature dependence of br.
|
|
43
|
ptrc=0.0
|
Power for temperature dependence of rc.
|
|
44
|
ptrb=0.0
|
Power for temperature dependence of rbc and rbv.
|
|
45
|
vg=1.2 V
|
Band-gap voltage.
|
|
46
|
pt=1.2
|
Power for temperature dependence of diffusion coefficient.
|
Noise model parameters
|
47
|
kf=0.0
|
Flickernoise coefficient.
|
|
48
|
af=1.0
|
Flickernoise exponent.
|
Operating-Point Parameters
|
1
|
ib (A)
|
Base current.
|
|
2
|
ic (A)
|
Collector current.
|
|
3
|
ie (A)
|
Emitter current.
|
|
4
|
isub (A)
|
Substrate current.
|
|
5
|
vbe (V)
|
Base-emitter voltage.
|
|
6
|
vbc (V)
|
Base-collector voltage.
|
|
7
|
vce (V)
|
Collector-emitter voltage.
|
|
8
|
vsubj (V)
|
Substrate voltage.
|
|
9
|
betadc (A/A)
|
Ratio of DC collector current to DC Base current.
|
|
10
|
rb (Ω)
|
Base resistance at operating point.
|
|
11
|
rc (Ω)
|
Collector resistance at operating point.
|
|
12
|
re (Ω)
|
Emitter resistance at operating point.
|
|
13
|
icb (A)
|
Collector-Base current.
|
|
14
|
ieb (A)
|
Emitter-Base current.
|
|
15
|
icsub (A)
|
Collector-Substrate current.
|
|
16
|
iesub (A)
|
Emitter-Substrate current.
|
|
17
|
pwr (W)
|
Power.
|
|
18
|
gpi (S)
|
Conductance emitter-base junction.
|
|
19
|
gmu (S)
|
Conductance collector-base junction.
|
|
20
|
gf (S)
|
Forward transconductance.
|
|
21
|
gr (S)
|
Reverse transconductance.
|
|
22
|
gs (S)
|
Conductance substrate-base junction.
|
|
23
|
g3 (S)
|
Transconductance (parasitic PNP) c-b-s transistor.
|
|
24
|
g4 (S)
|
Transconductance (parasitic PNP) e-b-s transistor.
|
|
25
|
ced (F)
|
Emitter diffusion capacitance.
|
|
26
|
ccd (F)
|
Collector diffusion capacitance.
|
|
27
|
cet (F)
|
Emitter junction depletion capacitance.
|
|
28
|
cct (F)
|
Collector junction depletion capacitance.
|
|
29
|
cst (F)
|
Substrate junction depletion capacitance.
|
|
30
|
betaac (A/A)
|
Small-signal common-emitter current gain.
|
|
31
|
ft (Hz)
|
Unity small-signal current-gain frequency.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
af M-48
|
gmu OP-19
|
mtau M-24
|
region I-4
|
area I-1
|
gpi OP-18
|
mult I-2
|
struct M-2
|
betaac OP-30
|
gr OP-21
|
nhf M-9
|
taub M-22
|
betadc OP-9
|
gs OP-22
|
nlf M-7
|
taune M-23
|
bf M-5
|
ib OP-1
|
nlr M-13
|
taur M-28
|
br M-11
|
ic OP-2
|
pc M-31
|
tnom M-38
|
ccd OP-26
|
icb OP-13
|
pe M-27
|
tref M-37
|
cct OP-28
|
icsub OP-15
|
ps M-34
|
trise I-5
|
ced OP-25
|
ie OP-3
|
pt M-46
|
trise M-40
|
cet OP-27
|
ieb OP-14
|
ptbf M-41
|
type M-1
|
cjc M-29
|
iesub OP-16
|
ptbr M-42
|
vbc OP-6
|
cje M-25
|
ikf M-8
|
ptrb M-44
|
vbe OP-5
|
cjs M-32
|
ikr M-14
|
ptrc M-43
|
vce OP-7
|
cst OP-29
|
iks M-15
|
pwr OP-17
|
vdc M-30
|
dta M-39
|
ilf M-6
|
rb OP-10
|
vde M-26
|
exphi M-35
|
ilr M-12
|
rbc M-19
|
vds M-33
|
fc M-36
|
imax M-4
|
rbv M-20
|
veaf M-10
|
ft OP-31
|
is M-3
|
rc M-18
|
vg M-45
|
g3 OP-23
|
isub OP-4
|
rc OP-11
|
vsubj OP-8
|
g4 OP-24
|
kf M-47
|
re M-21
|
xcs M-16
|
gf OP-20
|
m I-3
|
re OP-12
|
xes M-17
|
Lateral PNP Transistor (bjt500)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e s ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Area factor.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt500 parameter=value ...
Model Parameters
|
1
|
level=500
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
is=1.8e-16 A
|
Collector-emitter saturation current.
|
|
4
|
bf=131 A
|
Ideal forward common-emitter current gain.
|
|
5
|
ibf=2.6e-14 A
|
Saturation current of non-ideal forward base current.
|
|
6
|
vlf=0.54 V
|
Cross-over voltage of non-ideal forward base current.
|
|
7
|
ik=0.00011 A
|
High injection knee current.
|
|
8
|
xifv=0.43
|
Vertical fraction of forward current.
|
|
9
|
eafl=20.5 V
|
Early voltage of the lateral forward current component.
|
|
10
|
eafv=75 V
|
Early voltage of the vertical forward current component.
|
|
11
|
br=25 A
|
Ideal reverse common-emitter current gain.
|
|
12
|
ibr=1.2e-13 A
|
Saturation current of non-ideal reverse base current.
|
|
13
|
vlr=0.48 V
|
Cross-over voltage of non-ideal reverse base current.
|
|
14
|
xirv=0.43
|
Vertical fraction of reverse current.
|
|
15
|
earl=13.1 V
|
Early voltage of the lateral reverse current component.
|
|
16
|
earv=104 V
|
Early voltage of the vertical reverse current component.
|
|
17
|
xes=0.0027
|
Ratio between saturation current of e-b-s transistor and e-b-c transistor.
|
|
18
|
xhes=0.7
|
Fraction of substrate current of e-b-s transistor subject to high injection.
|
|
19
|
xcs=3
|
Ratio between saturation current of c-b-s transistor and c-b-e transistor.
|
|
20
|
xhcs=1
|
Fraction of substrate current of c-b-s transistor subject to high injection.
|
|
21
|
iss=4e-13 A
|
Saturation current of substrate-base diode.
|
|
22
|
rcex=5 Ω
|
External part of the collector resistance.
|
|
23
|
rcin=47 Ω
|
Internal part of the collector resistance.
|
|
24
|
rbcc=10 Ω
|
Constant part of the base resistance rbc.
|
|
25
|
rbcv=10 Ω
|
Variable part of the base resistance rbc.
|
|
26
|
rbec=10 Ω
|
Constant part of the base resistance rbe.
|
|
27
|
rbev=50 Ω
|
Variable part of the base resistance rbe.
|
|
28
|
reex=27 Ω
|
External part of the emitter resistance.
|
|
29
|
rein=66 Ω
|
Internal part of the emitter resistance.
|
|
30
|
rsb=1e+15 Ω
|
Substrate-base leakage resistance.
|
|
31
|
tlat=2.4e-09 s
|
Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.
|
|
32
|
tfvr=3e-08 s
|
Low injection forward transit time due to charge stored in the epilayer under the emitter.
|
|
33
|
tfn=2e-10 s
|
Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.
|
|
34
|
cje=6.1e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
35
|
vde=0.52 V
|
Emitter-base diffusion voltage.
|
|
36
|
pe=0.3
|
Emitter-base grading coefficient.
|
|
37
|
trvr=1e-09 s
|
Low injection reverse transit time due to charge stored in the epilayer under the collector.
|
|
38
|
trn=3e-09 s
|
Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.
|
|
39
|
cjc=3.9e-13 F
|
Zero-bias collector-base depletion capacitance.
|
|
40
|
vdc=0.57 V
|
Collector-base diffusion voltage.
|
|
41
|
pc=0.36
|
Collector-base grading coefficient.
|
|
42
|
cjs=1.3e-12 F
|
Zero-bias substrate-base depletion capacitance.
|
|
43
|
vds=0.52 V
|
Substrate-base diffusion voltage.
|
|
44
|
ps=0.35
|
Substrate-base grading coefficient.
|
|
45
|
tref=25 C
|
Reference temperature. Default set by option tnom.
|
|
46
|
dta=0 K
|
Difference between the device temperature and the ambient analysis temperature.
|
|
47
|
vgeb=1.21 V
|
Bandgap voltage of the emitter-base depletion region.
|
|
48
|
vgcb=1.21 V
|
Bandgap voltage of the collector-base depletion region.
|
|
49
|
vgsb=1.21 V
|
Bandgap voltage of the substrate-base depletion region.
|
|
50
|
vgb=1.21 V
|
Bandgap voltage of the base between emitter and collector.
|
|
51
|
vge=1.21 V
|
Bandgap voltage of the emitter.
|
|
52
|
vgje=1.12 V
|
Bandgap voltage recombination emitter-base junction.
|
|
53
|
ae=4.48
|
Temperature coefficient of bf.
|
|
54
|
spb=2.85
|
SC.
|
|
55
|
snb=2.6
|
Temperature coefficient of the epitaxial base electron mobility.
|
|
56
|
snbn=0.3
|
Temperature coefficient of buried layer electron mobility.
|
|
57
|
spe=0.73
|
Temperature coefficient of emitter hole mobility.
|
|
58
|
spc=0.73
|
Temperature coefficient of collector hole mobility.
|
|
59
|
sx=1
|
Temperature coefficient of combined minority carrier mobility in emitter and buried layer.
|
|
60
|
kf=0
|
Flickernoise coefficient.
|
|
61
|
af=1
|
Flickernoise exponent.
|
|
62
|
exphi=0
|
Not used in model bjt500.
|
|
63
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
64
|
imax=1000 A
|
Explosion current.
|
|
65
|
tnom (C)
|
alias of tnom.
|
|
66
|
tr (C)
|
alias of tnom.
|
|
67
|
simkitver=3.4
|
|
|
68
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ic (A)
|
External DC collector current.
|
|
2
|
ib (A)
|
External DC base current.
|
|
3
|
ie (A)
|
Resistive emitter current.
|
|
4
|
isub (A)
|
Resistive substrate current.
|
|
5
|
iflat (A)
|
Lateral forward current.
|
|
6
|
irlat (A)
|
Lateral reverse current.
|
|
7
|
ifver (A)
|
Vertical forward current.
|
|
8
|
irver (A)
|
Vertical reverse current.
|
|
9
|
ire (A)
|
ideal forward base current.
|
|
10
|
ile (A)
|
Non-ideal forward base current.
|
|
11
|
ise (A)
|
Forward substrate current.
|
|
12
|
irc (A)
|
Ideal reverse base current.
|
|
13
|
ilc (A)
|
Non-ideal reverse base current.
|
|
14
|
isc (A)
|
Reverse substrate current.
|
|
15
|
isf (A)
|
Reverse leakage current of the substrate-base junction.
|
|
16
|
ip (A)
|
Main current.
|
|
17
|
betadc
|
External DC current gain Ic/Ib.
|
|
18
|
vbc (V)
|
Base-collector voltage.
|
|
19
|
vbe (V)
|
Base-emitter voltage.
|
|
20
|
vce (V)
|
Collector-emitter voltage.
|
|
21
|
vsb (V)
|
Substrate-base voltage.
|
|
22
|
rcex (Ω)
|
External part of the collector resistance.
|
|
23
|
rcin (Ω)
|
Internal part of the collector resistance.
|
|
24
|
reex (Ω)
|
External part of the emitter resistance.
|
|
25
|
rein (Ω)
|
Internal part of the emitter resistance.
|
|
26
|
rbc (Ω)
|
Base resistance under the collector.
|
|
27
|
rbe (Ω)
|
Base resistance under the emitter.
|
|
28
|
rsb (Ω)
|
Ohmic leakage across the substrate-base junction.
|
|
29
|
pwr (W)
|
Power.
|
|
30
|
gfl (S)
|
Forward conductance, lateral path.
|
|
31
|
grl (S)
|
Reverse conductance, lateral path.
|
|
32
|
g11 (S)
|
Forward conductance, vertical path.
|
|
33
|
g12 (S)
|
Collector Early-effect on Ifver.
|
|
34
|
g21 (S)
|
Emitter Early-effect on Irver.
|
|
35
|
g22 (S)
|
Reverse conductance, vertical path.
|
|
36
|
gpiv (S)
|
Conductance emitter-base junction.
|
|
37
|
gmuv (S)
|
Conductance collector-base junction.
|
|
38
|
gbe (S)
|
Emitter-side: base conductance B1-B.
|
|
39
|
gibe (S)
|
Emitter Early-effect on Ib1b.
|
|
40
|
gbc (S)
|
Collector-side: base conductance B2-B.
|
|
41
|
gibc (S)
|
Collector Early-effect on Ib2b.
|
|
42
|
gise (S)
|
Transconductance (parasitic PNP) e-b-s transistor.
|
|
43
|
gisc (S)
|
Transconductance (parasitic PNP) c-b-s transistor.
|
|
44
|
gsb (S)
|
Conductance substrate-base junction.
|
|
45
|
cpil (F)
|
Forward diffusion capacitance, lateral path.
|
|
46
|
cipil (F)
|
Collector Early-effect on Qflat.
|
|
47
|
cpiv (F)
|
Forward total capacitance, vertical path.
|
|
48
|
cmul (F)
|
Reverse diffusion capacitance, lateral path.
|
|
49
|
cimul (F)
|
Emitter Early-effect on Qrlat.
|
|
50
|
cmuv (F)
|
Reverse total capacitance, vertical path.
|
|
51
|
csb (F)
|
Total capacitance substrate-base junction.
|
|
52
|
irbe (A)
|
Ideal total forward base current.
|
|
53
|
irbc (A)
|
Ideal total reverse base current.
|
|
54
|
irsb (A)
|
Substrate base leakage resistance current.
|
|
55
|
jtype
|
type: +1=npn and -1=pnp.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
ae M-53
|
gise OP-42
|
m I-5
|
tfn M-33
|
|
af M-61
|
gmuv OP-37
|
meff O-2
|
tfvr M-32
|
|
area I-6
|
gpiv OP-36
|
mult I-1
|
tlat M-31
|
|
betadc OP-17
|
grl OP-31
|
paramchk M-2
|
tnom M-65
|
|
bf M-4
|
gsb OP-44
|
pc M-41
|
tr M-66
|
|
br M-11
|
ib OP-2
|
pe M-36
|
tref M-45
|
|
cimul OP-49
|
ibf M-5
|
printscaled I-2
|
trise I-3
|
|
cipil OP-46
|
ibr M-12
|
ps M-44
|
trn M-38
|
|
cjc M-39
|
ic OP-1
|
pwr OP-29
|
trvr M-37
|
|
cje M-34
|
ie OP-3
|
rbc OP-26
|
type M-63
|
|
cjs M-42
|
iflat OP-5
|
rbcc M-24
|
vbc OP-18
|
|
cmul OP-48
|
ifver OP-7
|
rbcv M-25
|
vbe OP-19
|
|
cmuv OP-50
|
ik M-7
|
rbe OP-27
|
vce OP-20
|
|
compatible M-67
|
ilc OP-13
|
rbec M-26
|
vdc M-40
|
|
cpil OP-45
|
ile OP-10
|
rbev M-27
|
vde M-35
|
|
cpiv OP-47
|
imax M-64
|
rcex M-22
|
vds M-43
|
|
csb OP-51
|
ip OP-16
|
rcex OP-22
|
vgb M-50
|
|
dta M-46
|
irbc OP-53
|
rcin M-23
|
vgcb M-48
|
|
eafl M-9
|
irbe OP-52
|
rcin OP-23
|
vge M-51
|
|
eafv M-10
|
irc OP-12
|
reex M-28
|
vgeb M-47
|
|
earl M-15
|
ire OP-9
|
reex OP-24
|
vgje M-52
|
|
earv M-16
|
irlat OP-6
|
region I-4
|
vgsb M-49
|
|
exphi M-62
|
irsb OP-54
|
rein M-29
|
vlf M-6
|
|
g11 OP-32
|
irver OP-8
|
rein OP-25
|
vlr M-13
|
|
g12 OP-33
|
is M-3
|
rsb M-30
|
vsb OP-21
|
|
g21 OP-34
|
isc OP-14
|
rsb OP-28
|
xcs M-19
|
|
g22 OP-35
|
ise OP-11
|
snb M-55
|
xes M-17
|
|
gbc OP-40
|
isf OP-15
|
snbn M-56
|
xhcs M-20
|
|
gbe OP-38
|
iss M-21
|
spb M-54
|
xhes M-18
|
|
gfl OP-30
|
isub OP-4
|
spc M-58
|
xifv M-8
|
|
gibc OP-41
|
jtype OP-55
|
spe M-57
|
xirv M-14
|
|
gibe OP-39
|
kf M-60
|
sx M-59
|
|
|
gisc OP-43
|
level M-1
|
tempeff O-1
|
|
Lateral PNP Transistor (bjt500t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e s dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Area factor.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt500t parameter=value ...
Model Parameters
|
1
|
level=500
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
is=1.8e-16 A
|
Collector-emitter saturation current.
|
|
4
|
bf=131 A
|
Ideal forward common-emitter current gain.
|
|
5
|
ibf=2.6e-14 A
|
Saturation current of non-ideal forward base current.
|
|
6
|
vlf=0.54 V
|
Cross-over voltage of non-ideal forward base current.
|
|
7
|
ik=0.00011 A
|
High injection knee current.
|
|
8
|
xifv=0.43
|
Vertical fraction of forward current.
|
|
9
|
eafl=20.5 V
|
Early voltage of the lateral forward current component.
|
|
10
|
eafv=75 V
|
Early voltage of the vertical forward current component.
|
|
11
|
br=25 A
|
Ideal reverse common-emitter current gain.
|
|
12
|
ibr=1.2e-13 A
|
Saturation current of non-ideal reverse base current.
|
|
13
|
vlr=0.48 V
|
Cross-over voltage of non-ideal reverse base current.
|
|
14
|
xirv=0.43
|
Vertical fraction of reverse current.
|
|
15
|
earl=13.1 V
|
Early voltage of the lateral reverse current component.
|
|
16
|
earv=104 V
|
Early voltage of the vertical reverse current component.
|
|
17
|
xes=0.0027
|
Ratio between saturation current of e-b-s transistor and e-b-c transistor.
|
|
18
|
xhes=0.7
|
Fraction of substrate current of e-b-s transistor subject to high injection.
|
|
19
|
xcs=3
|
Ratio between saturation current of c-b-s transistor and c-b-e transistor.
|
|
20
|
xhcs=1
|
Fraction of substrate current of c-b-s transistor subject to high injection.
|
|
21
|
iss=4e-13 A
|
Saturation current of substrate-base diode.
|
|
22
|
rcex=5 Ω
|
External part of the collector resistance.
|
|
23
|
rcin=47 Ω
|
Internal part of the collector resistance.
|
|
24
|
rbcc=10 Ω
|
Constant part of the base resistance rbc.
|
|
25
|
rbcv=10 Ω
|
Variable part of the base resistance rbc.
|
|
26
|
rbec=10 Ω
|
Constant part of the base resistance rbe.
|
|
27
|
rbev=50 Ω
|
Variable part of the base resistance rbe.
|
|
28
|
reex=27 Ω
|
External part of the emitter resistance.
|
|
29
|
rein=66 Ω
|
Internal part of the emitter resistance.
|
|
30
|
rsb=1e+15 Ω
|
Substrate-base leakage resistance.
|
|
31
|
tlat=2.4e-09 s
|
Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.
|
|
32
|
tfvr=3e-08 s
|
Low injection forward transit time due to charge stored in the epilayer under the emitter.
|
|
33
|
tfn=2e-10 s
|
Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.
|
|
34
|
cje=6.1e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
35
|
vde=0.52 V
|
Emitter-base diffusion voltage.
|
|
36
|
pe=0.3
|
Emitter-base grading coefficient.
|
|
37
|
trvr=1e-09 s
|
Low injection reverse transit time due to charge stored in the epilayer under the collector.
|
|
38
|
trn=3e-09 s
|
Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.
|
|
39
|
cjc=3.9e-13 F
|
Zero-bias collector-base depletion capacitance.
|
|
40
|
vdc=0.57 V
|
Collector-base diffusion voltage.
|
|
41
|
pc=0.36
|
Collector-base grading coefficient.
|
|
42
|
cjs=1.3e-12 F
|
Zero-bias substrate-base depletion capacitance.
|
|
43
|
vds=0.52 V
|
Substrate-base diffusion voltage.
|
|
44
|
ps=0.35
|
Substrate-base grading coefficient.
|
|
45
|
tref=25 C
|
Reference temperature. Default set by option tnom.
|
|
46
|
dta=0 K
|
Difference between the device temperature and the ambient analysis temperature.
|
|
47
|
vgeb=1.21 V
|
Bandgap voltage of the emitter-base depletion region.
|
|
48
|
vgcb=1.21 V
|
Bandgap voltage of the collector-base depletion region.
|
|
49
|
vgsb=1.21 V
|
Bandgap voltage of the substrate-base depletion region.
|
|
50
|
vgb=1.21 V
|
Bandgap voltage of the base between emitter and collector.
|
|
51
|
vge=1.21 V
|
Bandgap voltage of the emitter.
|
|
52
|
vgje=1.12 V
|
Bandgap voltage recombination emitter-base junction.
|
|
53
|
ae=4.48
|
Temperature coefficient of bf.
|
|
54
|
spb=2.85
|
SC.
|
|
55
|
snb=2.6
|
Temperature coefficient of the epitaxial base electron mobility.
|
|
56
|
snbn=0.3
|
Temperature coefficient of buried layer electron mobility.
|
|
57
|
spe=0.73
|
Temperature coefficient of emitter hole mobility.
|
|
58
|
spc=0.73
|
Temperature coefficient of collector hole mobility.
|
|
59
|
sx=1
|
Temperature coefficient of combined minority carrier mobility in emitter and buried layer.
|
|
60
|
kf=0
|
Flickernoise coefficient.
|
|
61
|
af=1
|
Flickernoise exponent.
|
|
62
|
exphi=0
|
Not used in model bjt500.
|
|
63
|
rth=300 K/W
|
Thermal resistance.
|
|
64
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
65
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
66
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
67
|
imax=1000 A
|
Explosion current.
|
|
68
|
tnom (C)
|
alias of tnom.
|
|
69
|
tr (C)
|
alias of tnom.
|
|
70
|
simkitver=3.4
|
|
|
71
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ic (A)
|
External DC collector current.
|
|
2
|
ib (A)
|
External DC base current.
|
|
3
|
ie (A)
|
Resistive emitter current.
|
|
4
|
isub (A)
|
Resistive substrate current.
|
|
5
|
iflat (A)
|
Lateral forward current.
|
|
6
|
irlat (A)
|
Lateral reverse current.
|
|
7
|
ifver (A)
|
Vertical forward current.
|
|
8
|
irver (A)
|
Vertical reverse current.
|
|
9
|
ire (A)
|
ideal forward base current.
|
|
10
|
ile (A)
|
Non-ideal forward base current.
|
|
11
|
ise (A)
|
Forward substrate current.
|
|
12
|
irc (A)
|
Ideal reverse base current.
|
|
13
|
ilc (A)
|
Non-ideal reverse base current.
|
|
14
|
isc (A)
|
Reverse substrate current.
|
|
15
|
isf (A)
|
Reverse leakage current of the substrate-base junction.
|
|
16
|
ip (A)
|
Main current.
|
|
17
|
betadc
|
External DC current gain Ic/Ib.
|
|
18
|
vbc (V)
|
Base-collector voltage.
|
|
19
|
vbe (V)
|
Base-emitter voltage.
|
|
20
|
vce (V)
|
Collector-emitter voltage.
|
|
21
|
vsb (V)
|
Substrate-base voltage.
|
|
22
|
rcex (Ω)
|
External part of the collector resistance.
|
|
23
|
rcin (Ω)
|
Internal part of the collector resistance.
|
|
24
|
reex (Ω)
|
External part of the emitter resistance.
|
|
25
|
rein (Ω)
|
Internal part of the emitter resistance.
|
|
26
|
rbc (Ω)
|
Base resistance under the collector.
|
|
27
|
rbe (Ω)
|
Base resistance under the emitter.
|
|
28
|
rsb (Ω)
|
Ohmic leakage across the substrate-base junction.
|
|
29
|
pwr (W)
|
Power.
|
|
30
|
gfl (S)
|
Forward conductance, lateral path.
|
|
31
|
grl (S)
|
Reverse conductance, lateral path.
|
|
32
|
g11 (S)
|
Forward conductance, vertical path.
|
|
33
|
g12 (S)
|
Collector Early-effect on Ifver.
|
|
34
|
g21 (S)
|
Emitter Early-effect on Irver.
|
|
35
|
g22 (S)
|
Reverse conductance, vertical path.
|
|
36
|
gpiv (S)
|
Conductance emitter-base junction.
|
|
37
|
gmuv (S)
|
Conductance collector-base junction.
|
|
38
|
gbe (S)
|
Emitter-side: base conductance B1-B.
|
|
39
|
gibe (S)
|
Emitter Early-effect on Ib1b.
|
|
40
|
gbc (S)
|
Collector-side: base conductance B2-B.
|
|
41
|
gibc (S)
|
Collector Early-effect on Ib2b.
|
|
42
|
gise (S)
|
Transconductance (parasitic PNP) e-b-s transistor.
|
|
43
|
gisc (S)
|
Transconductance (parasitic PNP) c-b-s transistor.
|
|
44
|
gsb (S)
|
Conductance substrate-base junction.
|
|
45
|
cpil (F)
|
Forward diffusion capacitance, lateral path.
|
|
46
|
cipil (F)
|
Collector Early-effect on Qflat.
|
|
47
|
cpiv (F)
|
Forward total capacitance, vertical path.
|
|
48
|
cmul (F)
|
Reverse diffusion capacitance, lateral path.
|
|
49
|
cimul (F)
|
Emitter Early-effect on Qrlat.
|
|
50
|
cmuv (F)
|
Reverse total capacitance, vertical path.
|
|
51
|
csb (F)
|
Total capacitance substrate-base junction.
|
|
52
|
irbe (A)
|
Ideal total forward base current.
|
|
53
|
irbc (A)
|
Ideal total reverse base current.
|
|
54
|
irsb (A)
|
Substrate base leakage resistance current.
|
|
55
|
Pdiss (W)
|
Dissipation.
|
|
56
|
TK (K)
|
Actual device temperature.
|
|
57
|
jtype
|
Type +1=npn and -1=pnp.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
Pdiss OP-55
|
gibc OP-41
|
kf M-60
|
sx M-59
|
TK OP-56
|
gibe OP-39
|
level M-1
|
tempeff O-1
|
ae M-53
|
gisc OP-43
|
m I-5
|
tfn M-33
|
af M-61
|
gise OP-42
|
meff O-2
|
tfvr M-32
|
area I-6
|
gmuv OP-37
|
mult I-1
|
tlat M-31
|
ath M-65
|
gpiv OP-36
|
paramchk M-2
|
tnom M-68
|
betadc OP-17
|
grl OP-31
|
pc M-41
|
tr M-69
|
bf M-4
|
gsb OP-44
|
pe M-36
|
tref M-45
|
br M-11
|
ib OP-2
|
printscaled I-2
|
trise I-3
|
cimul OP-49
|
ibf M-5
|
ps M-44
|
trn M-38
|
cipil OP-46
|
ibr M-12
|
pwr OP-29
|
trvr M-37
|
cjc M-39
|
ic OP-1
|
rbc OP-26
|
type M-66
|
cje M-34
|
ie OP-3
|
rbcc M-24
|
vbc OP-18
|
cjs M-42
|
iflat OP-5
|
rbcv M-25
|
vbe OP-19
|
cmul OP-48
|
ifver OP-7
|
rbe OP-27
|
vce OP-20
|
cmuv OP-50
|
ik M-7
|
rbec M-26
|
vdc M-40
|
compatible M-70
|
ilc OP-13
|
rbev M-27
|
vde M-35
|
cpil OP-45
|
ile OP-10
|
rcex M-22
|
vds M-43
|
cpiv OP-47
|
imax M-67
|
rcex OP-22
|
vgb M-50
|
csb OP-51
|
ip OP-16
|
rcin M-23
|
vgcb M-48
|
cth M-64
|
irbc OP-53
|
rcin OP-23
|
vge M-51
|
dta M-46
|
irbe OP-52
|
reex M-28
|
vgeb M-47
|
eafl M-9
|
irc OP-12
|
reex OP-24
|
vgje M-52
|
eafv M-10
|
ire OP-9
|
region I-4
|
vgsb M-49
|
earl M-15
|
irlat OP-6
|
rein M-29
|
vlf M-6
|
earv M-16
|
irsb OP-54
|
rein OP-25
|
vlr M-13
|
exphi M-62
|
irver OP-8
|
rsb M-30
|
vsb OP-21
|
g11 OP-32
|
is M-3
|
rsb OP-28
|
xcs M-19
|
g12 OP-33
|
isc OP-14
|
rth M-63
|
xes M-17
|
g21 OP-34
|
ise OP-11
|
snb M-55
|
xhcs M-20
|
g22 OP-35
|
isf OP-15
|
snbn M-56
|
xhes M-18
|
gbc OP-40
|
iss M-21
|
spb M-54
|
xifv M-8
|
gbe OP-38
|
isub OP-4
|
spc M-58
|
xirv M-14
|
gfl OP-30
|
jtype OP-57
|
spe M-57
|
|
Vertical NPN/PNP Transistor (bjt503)
The bjt503 model provides a detailed description of a vertical integrated NPN and PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.95) as TN/TNS and TP/TPS level 503.
The NPN is also described in Nat.Lab. Unclassified Report Nr. 006/94 as Mextram Bipolar Transistor Model. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1993,1996
In addition to the model description a level parameter is added. Via the level parameter the user can switch between Philips Bipolar Modelbook (Dec.95) and Philips Bipolar Modelbook (Dec.94).
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.
The descriptions of the operating point derivatives are given for the NPN type. For the PNP type the terminal voltage in the descriptions has to be exchanged. E.g.:
NPN: gx = dIn/dVb2e1
PNP: gx = dIn/dVe1b2
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement
q4 (vcc net3 minus) npn_mod region=fwd m=1 mult=1
Sample Model Statement:
model npn_mod bjt503 type=npn level=2 exmod=1 is=1e-14 bf=85 ik=95e-6 rbc=50 cje=0.352e-12
Instance Definition
Name c b e [s] ModelName parameter=value ...
Instance Parameters
|
1
|
area=1
|
Area factor.
|
|
2
|
mult=1
|
Alias of area factor.
|
|
3
|
m=1
|
Multiplication factor.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, fwd, rev, and sat.
|
|
5
|
trise=0.0 K
|
Temperature rise from ambient.
|
|
6
|
lv1=1
|
|
|
7
|
lv4=1
|
|
Model Definition
model modelName bjt503 parameter=value ...
Model Parameters
|
1
|
type=npn
|
Transistor type. Possible values are npn, npnv, pnp, and pnpv.
|
|
2
|
level=2.0
|
Transistor Level. Possible values are 1 (Philips Bipolar Modelbook Dec.94) or 2 (Philips Bipolar Modelbook Dec.95).
|
|
3
|
exmod=0
|
Flag for extended modeling of the reverse current gain.
|
|
4
|
exphi=0
|
Flag for distributed high frequency effects.
|
|
5
|
exavl=1
|
Flag for extended modeling of avalanche currents.
|
|
6
|
is=5.0e-17 A
|
Collector-emitter saturation current.
|
|
7
|
bf=140.0 A/A
|
Ideal forward current gain.
|
|
8
|
xibi=0.0
|
Fraction of ideal base current that belongs to the sidewall.
|
|
9
|
ibf=2.0e-14 A
|
Saturation current of the non-ideal forward base current.
|
|
10
|
vlf=0.5 V
|
Cross-over voltage of the non-ideal forward base current.
|
|
11
|
ik=15.0e-3 A
|
High-injection knee current.
|
|
12
|
bri=16.0 A/A
|
Ideal reverse current gain.
|
|
13
|
ibr=8.0e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
14
|
vlr=0.5 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
15
|
xext=0.5
|
Part of Iex, Qex, Qtex and Isub that depends on Vbc1.
|
|
16
|
qbo=1.2e-12 Coul
|
Base charge at zero bias.
|
|
17
|
eta=4.0
|
Factor of the built-in field of the base.
|
|
18
|
avl=50.0
|
Weak avalanche parameter.
|
|
19
|
efi=0.7
|
Electric field intercept (with exavl=1.
|
|
20
|
ihc=3.0e-3 A
|
Critical current for hot carriers.
|
|
21
|
rcc=25.0 Ω
|
Constant part of the collector resistance.
|
|
22
|
rcv=750.0 Ω
|
Resistance of the unmodulated epilayer.
|
|
23
|
scrcv=1000.0 Ω
|
Space charge resistance of the epilayer.
|
|
24
|
sfh=0.6
|
Current spreading factor epilayer.
|
|
25
|
rbc=50.0 Ω
|
Constant part of the base resistance.
|
|
26
|
rbv=100.0 Ω
|
Variable part of the base resistance at zero bias.
|
|
27
|
re=2.0 Ω
|
Emitter series resistance.
|
|
28
|
taune=3.0e-10 s
|
Minimum delay time of neutral and emitter charge.
|
|
29
|
mtau=1.18
|
Non-ideality factor of the neutral and emitter charge.
|
|
30
|
cje=2.5e-13 F
|
Zero bias emitter-base depletion capacitance.
|
|
31
|
vde=0.9 V
|
Emitter-base diffusion voltage.
|
|
32
|
pe=0.33
|
Emitter-base grading coefficient.
|
|
33
|
xcje=0.5
|
Fraction of the e-b depletion cap. that belongs to the sidewall.
|
|
34
|
cjc=1.3e-13 F
|
Zero bias collector-base depletion capacitance.
|
|
35
|
vdc=0.6 V
|
Collector-base diffusion voltage.
|
|
36
|
pc=0.4
|
Collector-base grading coefficient variable part.
|
|
37
|
xp=0.2
|
Constant part of cjc.
|
|
38
|
mc=0.5
|
Collector current modulation coefficient.
|
|
39
|
xcjc=0.1
|
Fraction of the collector-base depletion cap. under the emitter area.
|
|
40
|
tref (C)
|
Reference temperature. Default set by option tnom.
|
|
41
|
tnom (C)
|
Alias of tref. Default set by option tnom.
|
|
42
|
tr (C)
|
Alias of tref. Default set by option tnom.
|
|
43
|
dta=0.0 K
|
Difference of the device temperature to the ambient temperature. It served as the default value of instance trise.
|
|
44
|
trise=0.0 K
|
Alias of dta.
|
|
45
|
vge=1.01 V
|
Band-gap voltage of the emitter.
|
|
46
|
vgb=1.18 V
|
Band-gap voltage of the base.
|
|
47
|
vgc=1.205 V
|
Band-gap voltage of the collector.
|
|
48
|
vgj=1.1 V
|
Band-gap voltage recombination emitter-base junction.
|
|
49
|
vi=0.04 V
|
Ionization voltage base dope.
|
|
50
|
na=3.0e17 cm-3
|
Maximum base dope concentration.
|
|
51
|
er=2.0e-3
|
Temperature coefficient of vlf and vlr.
|
|
52
|
ab=1.35
|
Temperature coefficient resistivity base.
|
|
53
|
aepi=2.15
|
Temperature coefficient resistivity of the epilayer.
|
|
54
|
aex=1.0
|
Temperature coefficient resistivity of the extrinsic base.
|
|
55
|
ac=0.4
|
Temperature coefficient resistivity of the buried layer.
|
|
56
|
kf=2.0e-16
|
Flickernoise coefficient ideal base current.
|
|
57
|
kfn=2.0e-16
|
Flickernoise coefficient non-ideal base current.
|
|
58
|
af=1.0
|
Flickernoise exponent.
|
|
59
|
iss=6.0e-16 A
|
Base-substrate saturation current.
|
|
60
|
iks=5.0e-6 A
|
Knee current of the substrate.
|
|
61
|
cjs=1.0e-12 F
|
Zero bias collector-substrate depletion capacitance.
|
|
62
|
vds=0.5 V
|
Collector-substrate diffusion voltage.
|
|
63
|
ps=0.33
|
Collector-substrate grading coefficient.
|
|
64
|
vgs=1.15 V
|
Band-gap voltage of the substrate.
|
|
65
|
as=2.15
|
For a closed buried layer: as=ac. For an open buried layer: as=aepi.
|
|
66
|
imax=1.0 A
|
Explosion current.
|
|
67
|
vers=503
|
Version mextrem.
|
|
68
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, hspice, and spiceplus.
|
|
69
|
subs=1
|
|
Operating-Point Parameters
|
1
|
ib (A)
|
Base current.
|
|
2
|
ic (A)
|
Collector current.
|
|
3
|
ie (A)
|
Emitter current.
|
|
4
|
is (A)
|
Substrate current.
|
|
5
|
vbe (V)
|
Base-emitter voltage.
|
|
6
|
vbc (V)
|
Base-collector voltage.
|
|
7
|
vce (V)
|
Collector-emitter voltage.
|
|
8
|
vsc (V)
|
Substrate voltage.
|
|
9
|
re (Ω)
|
Constant emitter resistance.
|
|
10
|
rcc (Ω)
|
Constant collector resistance.
|
|
11
|
rbc (Ω)
|
Constant part of base resistance.
|
|
12
|
betadc (A/A)
|
DC current gain.
|
|
13
|
pwr (W)
|
Power.
|
|
14
|
Vb1e1 (V)
|
Internal voltage.
|
|
15
|
Vb2e1 (V)
|
Internal voltage.
|
|
16
|
Vb2c1 (V)
|
Internal voltage.
|
|
17
|
Vb2c2 (V)
|
Internal voltage.
|
|
18
|
Vb1b2 (V)
|
Internal voltage.
|
|
19
|
Vb1c1 (V)
|
Internal voltage.
|
|
20
|
Vbc1 (V)
|
Internal voltage.
|
|
21
|
in (A)
|
Main current.
|
|
22
|
ic1c2 (A)
|
Variable collector resistance current.
|
|
23
|
ib1 (A)
|
Bulk component of ideal base current.
|
|
24
|
ib1s (A)
|
Sidewall component of ideal base current.
|
|
25
|
ib2 (A)
|
Non-ideal base current.
|
|
26
|
iavl (A)
|
Weak avalanche current.
|
|
27
|
ib1b2 (A)
|
Variable base resistance current.
|
|
28
|
ib3 (A)
|
Non-ideal reverse base current.
|
|
29
|
iex (A)
|
Internal extrinsic base current.
|
|
30
|
isub (A)
|
Internal base-substrate current.
|
|
31
|
isf (A)
|
Substrate-collector current.
|
|
32
|
xiex (A)
|
External extrinsic base current.
|
|
33
|
Xisub (A)
|
External base-substrate current.
|
|
34
|
gx (S)
|
dIn/dVb2e1.
|
|
35
|
gy (S)
|
dIn/dVb2c2.
|
|
36
|
gz (S)
|
dIn/dVb2c1.
|
|
37
|
grcvy (S)
|
dIc1c2/dVb2c2.
|
|
38
|
grcvz (S)
|
dIc1c2/dVb2c1.
|
|
39
|
gpi (S)
|
Conductance floor base-emitter junction: dIb1/dVb2e1 + dIb2/dVb2e1.
|
|
40
|
sgpi (S)
|
Conductance sidewall base-emitter junction: dIb1S/dVb1e1.
|
|
41
|
gmux (S)
|
Dependence avalanche multiplication on internal b-e junction: -dIavl/dVb2e1.
|
|
42
|
gmu (S)
|
Dependence avalanche multiplication on internal b-c junction: -dIavl/dVb2c2.
|
|
43
|
gmuz (S)
|
Dependence avalanche multiplication on external b-c junction:-dIavl/dVb2c1.
|
|
44
|
grbv (S)
|
dIb1b2/dVb1b2.
|
|
45
|
grbvx (S)
|
Emitter Early-effect on Ib1b2: dIb1b2/dVb2e1.
|
|
46
|
grbvy (S)
|
Internal collector Early-effect on Ib1b2: dIb1b2/dVb2c2.
|
|
47
|
grbvz (S)
|
External collector Early effect on Ib1b2: dIb1b2/dVb2c1.
|
|
48
|
gmuex (S)
|
Conductance floor extrinsic b-c junction: dIex/dVb1c1 + dIsub/dVb1c1 + dIb3/dVb1c1.
|
|
49
|
xgmuex (S)
|
Conductance sidewall extrinsic b-c junction: dXIex/dVbc1 + dXIsub/dVbc1.
|
|
50
|
gsub (S)
|
Conductance s-c junction: dIsf/dVsc1.
|
|
51
|
gpnp (S)
|
Transconductance floor extrinsic PNP transistor: dIsub/dVb1c1.
|
|
52
|
xgpnp (S)
|
Transconductance sidewall extrinsic PNP transistor: dXIsub/dVbc1.
|
|
53
|
cbex (F)
|
Capacitance floor b-e junction: dQte/dVb2e1 + dQbe/dVb2e1 + dQn/dVb2e1.
|
|
54
|
cbey (F)
|
Internal collector Early-effect on Qbe: dQbe/dVb2c2.
|
|
55
|
cbez (F)
|
External collector Early-effect on Qbe: dQbe/dVb2c1.
|
|
56
|
scte (F)
|
Dependence of QteS on internal b-e junction: dQteS/dVb2e1.
|
|
57
|
cbcx (F)
|
Emitter Early-effect on Qbc: dQbc/dVb2e1.
|
|
58
|
cbcy (F)
|
Capacitance intrinsic b-c junction: dQtc/dVb2c2 + dQbc/dVb2c2 + dQepi/dVb2c2.
|
|
59
|
cbcz (F)
|
Collector Early-effect on Qtc: dQtc/dVb2c1 + dQbc/dVb2c1 + dQepi/dVb2c1.
|
|
60
|
cb1b2 (F)
|
Capacitance AC current crowding: dQb1b2/dVb1b2 = Cb.
|
|
61
|
cb1b2x (F)
|
Dependence of Qb1b2 on internal b-e junction voltage: dQb1b2/dVb2e1.
|
|
62
|
cbcex (F)
|
Capacitance floor extrinsic b-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
|
|
63
|
xcbcex (F)
|
Capacitance sidewall extrinsic b-c junction: dXQtex/dVbc1 + dXQex/dVbc1.
|
|
64
|
cts (F)
|
Capacitance s-c junction: dQtex/dVb1c1 + dQex/dVb1c1.
|
|
65
|
lv6 (A)
|
|
|
66
|
lv7 (S)
|
|
|
67
|
lv8 (A)
|
|
|
68
|
lv9 (A)
|
|
|
69
|
lv10 (A/A)
|
|
|
70
|
lv11 (A/A)
|
|
|
71
|
lv14 (Ω)
|
|
|
72
|
lv15 (Ω)
|
|
|
73
|
lv16 (S)
|
|
|
74
|
lx0 (V)
|
|
|
75
|
lx1 (V)
|
|
|
76
|
lx2 (A)
|
|
|
77
|
lx3 (A)
|
|
|
78
|
cbe (F)
|
Cbe.
|
|
79
|
cbc (F)
|
Cbc.
|
|
80
|
csc (F)
|
Csc.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
Vb1b2 OP-18
|
eta M-17
|
is OP-4
|
re OP-9
|
Vb1c1 OP-19
|
exavl M-5
|
isf OP-31
|
region I-4
|
Vb1e1 OP-14
|
exmod M-3
|
iss M-59
|
scrcv M-23
|
Vb2c1 OP-16
|
exphi M-4
|
isub OP-30
|
scte OP-56
|
Vb2c2 OP-17
|
gmu OP-42
|
kf M-56
|
sfh M-24
|
Vb2e1 OP-15
|
gmuex OP-48
|
kfn M-57
|
sgpi OP-40
|
Vbc1 OP-20
|
gmux OP-41
|
level M-2
|
subs M-69
|
Xisub OP-33
|
gmuz OP-43
|
lv1 I-6
|
taune M-28
|
ab M-52
|
gpi OP-39
|
lv10 OP-69
|
tnom M-41
|
ac M-55
|
gpnp OP-51
|
lv11 OP-70
|
tr M-42
|
aepi M-53
|
grbv OP-44
|
lv14 OP-71
|
tref M-40
|
aex M-54
|
grbvx OP-45
|
lv15 OP-72
|
trise I-5
|
af M-58
|
grbvy OP-46
|
lv16 OP-73
|
trise M-44
|
area I-1
|
grbvz OP-47
|
lv4 I-7
|
type M-1
|
as M-65
|
grcvy OP-37
|
lv6 OP-65
|
vbc OP-6
|
avl M-18
|
grcvz OP-38
|
lv7 OP-66
|
vbe OP-5
|
betadc OP-12
|
gsub OP-50
|
lv8 OP-67
|
vce OP-7
|
bf M-7
|
gx OP-34
|
lv9 OP-68
|
vdc M-35
|
bri M-12
|
gy OP-35
|
lx0 OP-74
|
vde M-31
|
cb1b2 OP-60
|
gz OP-36
|
lx1 OP-75
|
vds M-62
|
cb1b2x OP-61
|
iavl OP-26
|
lx2 OP-76
|
vers M-67
|
cbc OP-79
|
ib OP-1
|
lx3 OP-77
|
vgb M-46
|
cbcex OP-62
|
ib1 OP-23
|
m I-3
|
vgc M-47
|
cbcx OP-57
|
ib1b2 OP-27
|
mc M-38
|
vge M-45
|
cbcy OP-58
|
ib1s OP-24
|
mtau M-29
|
vgj M-48
|
cbcz OP-59
|
ib2 OP-25
|
mult I-2
|
vgs M-64
|
cbe OP-78
|
ib3 OP-28
|
na M-50
|
vi M-49
|
cbex OP-53
|
ibf M-9
|
pc M-36
|
vlf M-10
|
cbey OP-54
|
ibr M-13
|
pe M-32
|
vlr M-14
|
cbez OP-55
|
ic OP-2
|
ps M-63
|
vsc OP-8
|
cjc M-34
|
ic1c2 OP-22
|
pwr OP-13
|
xcbcex OP-63
|
cje M-30
|
ie OP-3
|
qbo M-16
|
xcjc M-39
|
cjs M-61
|
iex OP-29
|
rbc M-25
|
xcje M-33
|
compatible M-68
|
ihc M-20
|
rbc OP-11
|
xext M-15
|
csc OP-80
|
ik M-11
|
rbv M-26
|
xgmuex OP-49
|
cts OP-64
|
iks M-60
|
rcc M-21
|
xgpnp OP-52
|
dta M-43
|
imax M-66
|
rcc OP-10
|
xibi M-8
|
efi M-19
|
in OP-21
|
rcv M-22
|
xiex OP-32
|
er M-51
|
is M-6
|
re M-27
|
xp M-37
|
Compact Bipolar-Transistor Model (bjt504)
This is SimKit 5.0.
Instance Definition
Name c b e s ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt504 parameter=value ...
Model Parameters
|
1
|
level=504
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
exsub=0
|
Flag for extended modelling of substrate currents.
|
|
10
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
11
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
12
|
ver=2.5 V
|
Reverse Early voltage.
|
|
13
|
vef=44 V
|
Forward Early voltage.
|
|
14
|
bf=215
|
Ideal forward current gain.
|
|
15
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
16
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
17
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
18
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
19
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
20
|
bri=7
|
Ideal reverse current gain.
|
|
21
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
22
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
23
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
24
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
25
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
26
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
27
|
re=5 Ω
|
Emitter resistance.
|
|
28
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
29
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
30
|
rcc=12 Ω
|
Collector contact resistance.
|
|
31
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
32
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
33
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
34
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
35
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
36
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
37
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
38
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
39
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
40
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
41
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
42
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
43
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
44
|
pc=0.5
|
Collector-base grading coefficient.
|
|
45
|
xp=0.35
|
Constant part of Cjc.
|
|
46
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
47
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
48
|
cbco=0
|
Collector-base overlap capacitance.
|
|
49
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
50
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
51
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
52
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
53
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
54
|
deg=0 eV
|
Bandgap difference over the base.
|
|
55
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
56
|
xqb=0.333
|
Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
|
|
57
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
58
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
59
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
60
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
61
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
62
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
63
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
64
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
65
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
66
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
67
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
68
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
69
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
70
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
71
|
avgeb=0.000473 V/K
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
72
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
73
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
74
|
af=2
|
Exponent of the Flicker-noise.
|
|
75
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
76
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
77
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
78
|
kavlver=504
|
Switch for avalanche noise of 504.11 and 504.12.
|
|
79
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
80
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
81
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
82
|
iss=4.8e-17 A
|
Base-substrate saturation current.
|
|
83
|
icss=-1 A
|
Collector-substrate ideal saturation current.
|
|
84
|
iks=0.00025 A
|
Base-substrate high injection knee current.
|
|
85
|
cjs=3.15e-13 F
|
Zero-bias collector-substrate depletion capacitance.
|
|
86
|
vds=0.62 V
|
Collector-substrate diffusion voltage.
|
|
87
|
ps=0.34
|
Collector-substrate grading coefficient.
|
|
88
|
vgs=1.2 V
|
Band-gap voltage of the substrate.
|
|
89
|
as=1.58
|
For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.
|
|
90
|
asub=2
|
Temperature coefficient for mobility of minorities in the substrate.
|
|
91
|
vexlim=400
|
Upper limit of exp() function argument for convergence.
|
|
92
|
type=npn
|
Transistor type. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
93
|
imax=1000 A
|
Explosion current.
|
|
94
|
mvt0=0.0
|
Threshold mismatch intercept.
|
|
95
|
tnom (deg. C)
|
Parameters measurement temperature.
|
|
96
|
tr (deg. C)
|
Alias of tnom.
|
|
97
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
Is (A)
|
External DC substrate current.
|
|
5
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
6
|
Vbe (V)
|
External base-emitter bias.
|
|
7
|
Vbc (V)
|
External base-collector bias.
|
|
8
|
Vce (V)
|
External collector-emitter bias.
|
|
9
|
Vse (V)
|
External substrate-emitter bias.
|
|
10
|
Vbs (V)
|
External base-substrate bias.
|
|
11
|
Vsc (V)
|
External substrate-collector bias.
|
|
12
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
13
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
14
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
15
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
16
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
17
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
18
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
19
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
20
|
In (A)
|
Main current.
|
|
21
|
Ic1c2 (A)
|
Epilayer current.
|
|
22
|
Ib1b2 (A)
|
Pinched-base current.
|
|
23
|
Ib1 (A)
|
Ideal forward base current.
|
|
24
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
25
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
26
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
27
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
28
|
Iex (A)
|
Extrinsic reverse base current.
|
|
29
|
XIex (A)
|
Extrinsic reverse base current.
|
|
30
|
Iavl (A)
|
Avalanche current.
|
|
31
|
IRE (A)
|
Current through emitter resistance.
|
|
32
|
IRBC (A)
|
Current through constant base resistance.
|
|
33
|
IRCC (A)
|
Current through collector contact resistance.
|
|
34
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
35
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
36
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
37
|
Qte (C)
|
Base-emitter depletion charge.
|
|
38
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
39
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
40
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
41
|
Qtc (C)
|
Base-collector depletion charge.
|
|
42
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
43
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
44
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
45
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
46
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
47
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
48
|
gx (1/Ω)
|
Forward transconductance.
|
|
49
|
gy (1/Ω)
|
Reverse transconductance.
|
|
50
|
gz (1/Ω)
|
Reverse transconductance.
|
|
51
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
52
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
53
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
54
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
55
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
56
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
57
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
58
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
59
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
60
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
61
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
62
|
Rbv (Ω)
|
Base resistance.
|
|
63
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
64
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
65
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
66
|
RE (Ω)
|
Emitter resistance.
|
|
67
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
68
|
RCC (Ω)
|
Collector contact resistance.
|
|
69
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
70
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
71
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
72
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
73
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
74
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
75
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
76
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
77
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
78
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
79
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
80
|
Cb1b2 (F)
|
Capacitance AC current crowding.
|
|
81
|
Cb1b2x (F)
|
Cross-capacitance of the AC current crowding.
|
|
82
|
Cb1b2y (F)
|
Cross-capacitance of the AC current crowding.
|
|
83
|
Cb1b2z (F)
|
Cross-capacitance of the AC current crowding.
|
|
84
|
gm (1/Ω)
|
Transconductance.
|
|
85
|
beta
|
Current amplification.
|
|
86
|
gout (1/Ω)
|
Output conductance.
|
|
87
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
88
|
RB (Ω)
|
Base resistance.
|
|
89
|
Cbe (F)
|
Base-emitter capacitance.
|
|
90
|
Cbc (F)
|
Base-collector capacitance.
|
|
91
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
92
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
93
|
XiWepi (M)
|
Thickness of injection layer.
|
|
94
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
95
|
Pdiss (W)
|
Dissipation.
|
|
96
|
pwr (W)
|
Power dissipation.
|
|
97
|
TK (K)
|
Actual temperature.
|
|
98
|
Isub (A)
|
Substrate current.
|
|
99
|
XIsub (A)
|
Substrate current.
|
|
100
|
Isf (A)
|
Substrate failure current.
|
|
101
|
Qts (C)
|
Collector-substrate depletion charge.
|
|
102
|
gS (1/Ω)
|
Conductance parasitic PNP transistor.
|
|
103
|
XgS (1/Ω)
|
Conductance parasitic PNP transistor.
|
|
104
|
gSf (1/Ω)
|
Conductance of s-c junction.
|
|
105
|
Cts (F)
|
Capacitance s-c junction.
|
|
106
|
jtype
|
Type: +1=npn and -1=pnp.
|
|
107
|
w_estimate (M)
|
|
|
108
|
l_estimate (M)
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
BetaDC OP-5
|
SCbe OP-71
|
dvgbr M-66
|
mvt0 M-94
|
Cb1b2 OP-80
|
SIb1 OP-24
|
dvgte M-73
|
nzeb M-19
|
Cb1b2x OP-81
|
SQte OP-38
|
exavl M-8
|
paramchk M-2
|
Cb1b2y OP-82
|
Sgpi OP-51
|
exmod M-6
|
pc M-44
|
Cb1b2z OP-83
|
TK OP-97
|
exphi M-7
|
pe M-39
|
Cbc OP-90
|
Vb1c1 OP-15
|
exsub M-9
|
printscaled I-2
|
Cbcex OP-78
|
Vb1c4 OP-16
|
fT OP-91
|
ps M-87
|
Cbcx OP-75
|
Vb2c1 OP-14
|
ftaun M-81
|
pwr OP-96
|
Cbcy OP-76
|
Vb2c2 OP-13
|
gS OP-102
|
rbc M-28
|
Cbcz OP-77
|
Vb2c2star OP-94
|
gSf OP-104
|
rbv M-29
|
Cbe OP-89
|
Vb2e1 OP-12
|
gm OP-84
|
rcbli M-32
|
Cbex OP-72
|
Vbc OP-7
|
gmu OP-87
|
rcblx M-31
|
Cbey OP-73
|
Vbe OP-6
|
gmuex OP-58
|
rcc M-30
|
Cbez OP-74
|
Vbs OP-10
|
gmux OP-55
|
rcv M-33
|
Cts OP-105
|
Vc3c4 OP-17
|
gmuy OP-56
|
re M-27
|
IRBC OP-32
|
Vc4c1 OP-18
|
gmuz OP-57
|
region I-4
|
IRCBLI OP-35
|
Vce OP-8
|
gout OP-86
|
scrcv M-34
|
IRCBLX OP-34
|
Ve1e OP-19
|
gpix OP-52
|
sfh M-26
|
IRCC OP-33
|
Vsc OP-11
|
gpiy OP-53
|
taub M-51
|
IRE OP-31
|
Vse OP-9
|
gpiz OP-54
|
taue M-50
|
Iavl OP-30
|
XCbcex OP-79
|
grbvx OP-63
|
taur M-53
|
Ib OP-2
|
XIex OP-29
|
grbvy OP-64
|
tempeff O-1
|
Ib1 OP-23
|
XIsub OP-99
|
grbvz OP-65
|
tepi M-52
|
Ib1b2 OP-22
|
XQex OP-47
|
grcvy OP-60
|
tnom M-95
|
Ib2 OP-26
|
XQtex OP-45
|
grcvz OP-61
|
tr M-96
|
Ib3 OP-27
|
XgS OP-103
|
gx OP-48
|
tref M-4
|
Ic OP-1
|
Xgmuex OP-59
|
gy OP-49
|
trise I-3
|
Ic1c2 OP-21
|
XiWepi OP-93
|
gz OP-50
|
tvgeb M-72
|
Ie OP-3
|
ab M-59
|
ibf M-15
|
type M-92
|
Iex OP-28
|
ac M-63
|
ibr M-21
|
vavl M-25
|
In OP-20
|
acbl M-64
|
icss M-83
|
vdc M-43
|
Iqs OP-92
|
ae M-58
|
ihc M-35
|
vde M-38
|
Is OP-4
|
aepi M-61
|
ik M-11
|
vds M-86
|
Isf OP-100
|
aex M-62
|
iks M-84
|
vef M-13
|
Isub OP-98
|
af M-74
|
imax M-93
|
ver M-12
|
Izteb OP-25
|
aqbo M-57
|
is M-10
|
vexlim M-91
|
Pdiss OP-95
|
area I-6
|
iss M-82
|
vgb M-67
|
Qb1b2 OP-43
|
as M-89
|
izeb M-18
|
vgc M-68
|
Qbc OP-40
|
asub M-90
|
jtype OP-106
|
vgj M-69
|
Qbe OP-39
|
avgeb M-71
|
kavl M-77
|
vgs M-88
|
Qe OP-36
|
axi M-36
|
kavlver M-78
|
vgzeb M-70
|
Qepi OP-42
|
beta OP-85
|
kc M-79
|
vlr M-22
|
Qex OP-46
|
bf M-14
|
ke M-80
|
w_estimate OP-107
|
Qtc OP-41
|
bri M-20
|
kf M-75
|
wavl M-24
|
Qte OP-37
|
cbco M-48
|
kfn M-76
|
xcjc M-47
|
Qtex OP-44
|
cbeo M-41
|
l_estimate OP-108
|
xcje M-40
|
Qts OP-101
|
cjc M-42
|
level M-1
|
xext M-23
|
RB OP-88
|
cje M-37
|
m I-5
|
xibi M-17
|
RBC OP-67
|
cjs M-85
|
mc M-46
|
xp M-45
|
RCBLI OP-70
|
compatible M-97
|
meff O-2
|
xqb M-56
|
RCBLX OP-69
|
dais M-60
|
mexlev M-3
|
xrec M-55
|
RCC OP-68
|
deg M-54
|
mlf M-16
|
|
RE OP-66
|
dta M-5
|
mtau M-49
|
|
Rbv OP-62
|
dvgbf M-65
|
mult I-1
|
|
Compact Bipolar-Transistor Model (bjt504t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e s dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt504t parameter=value ...
Model Parameters
|
1
|
level=504
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
exsub=0
|
Flag for extended modelling of substrate currents.
|
|
10
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
11
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
12
|
ver=2.5 V
|
Reverse Early voltage.
|
|
13
|
vef=44 V
|
Forward Early voltage.
|
|
14
|
bf=215
|
Ideal forward current gain.
|
|
15
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
16
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
17
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
18
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
19
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
20
|
bri=7
|
Ideal reverse current gain.
|
|
21
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
22
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
23
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
24
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
25
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
26
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
27
|
re=5 Ω
|
Emitter resistance.
|
|
28
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
29
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
30
|
rcc=12 Ω
|
Collector contact resistance.
|
|
31
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
32
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
33
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
34
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
35
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
36
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
37
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
38
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
39
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
40
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
41
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
42
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
43
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
44
|
pc=0.5
|
Collector-base grading coefficient.
|
|
45
|
xp=0.35
|
Constant part of Cjc.
|
|
46
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
47
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
48
|
cbco=0
|
Collector-base overlap capacitance.
|
|
49
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
50
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
51
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
52
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
53
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
54
|
deg=0 eV
|
Bandgap difference over the base.
|
|
55
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
56
|
xqb=0.333
|
Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
|
|
57
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
58
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
59
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
60
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
61
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
62
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
63
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
64
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
65
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
66
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
67
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
68
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
69
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
70
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
71
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
72
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
73
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
74
|
af=2
|
Exponent of the Flicker-noise.
|
|
75
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
76
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
77
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
78
|
kavlver=504
|
Switch for avalanche noise of 504.11 and 504.12.
|
|
79
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
80
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
81
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
82
|
iss=4.8e-17 A
|
Base-substrate saturation current.
|
|
83
|
icss=-1 A
|
Collector-substrate ideal saturation current.
|
|
84
|
iks=0.00025 A
|
Base-substrate high injection knee current.
|
|
85
|
cjs=3.15e-13 F
|
Zero-bias collector-substrate depletion capacitance.
|
|
86
|
vds=0.62 V
|
Collector-substrate diffusion voltage.
|
|
87
|
ps=0.34
|
Collector-substrate grading coefficient.
|
|
88
|
vgs=1.2 V
|
Band-gap voltage of the substrate.
|
|
89
|
as=1.58
|
For a closed buried layer: As=Ac: for an open buried layer: As=Aepi.
|
|
90
|
asub=2
|
Temperature coefficient for mobility of minorities in the substrate.
|
|
91
|
rth=300 K/W
|
Thermal resistance.
|
|
92
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
93
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
94
|
vexlim=400
|
Upper limit of exp() function argument for convergence.
|
|
95
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
96
|
imax=1000 A
|
Explosion current.
|
|
97
|
mvt0=0.0
|
Threshold mismatch intercept.
|
|
98
|
tnom (deg. C)
|
Alias of tnom.
|
|
99
|
tr (deg. C)
|
Alias of tnom.
|
|
100
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
Is (A)
|
External DC substrate current.
|
|
5
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
6
|
Vbe (V)
|
External base-emitter bias.
|
|
7
|
Vbc (V)
|
External base-collector bias.
|
|
8
|
Vce (V)
|
External collector-emitter bias.
|
|
9
|
Vse (V)
|
External substrate-emitter bias.
|
|
10
|
Vbs (V)
|
External base-substrate bias.
|
|
11
|
Vsc (V)
|
External substrate-collector bias.
|
|
12
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
13
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
14
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
15
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
16
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
17
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
18
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
19
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
20
|
In (A)
|
Main current.
|
|
21
|
Ic1c2 (A)
|
Epilayer current.
|
|
22
|
Ib1b2 (A)
|
Pinched-base current.
|
|
23
|
Ib1 (A)
|
Ideal forward base current.
|
|
24
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
25
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
26
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
27
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
28
|
Iex (A)
|
Extrinsic reverse base current.
|
|
29
|
XIex (A)
|
Extrinsic reverse base current.
|
|
30
|
Iavl (A)
|
Avalanche current.
|
|
31
|
IRE (A)
|
Current through emitter resistance.
|
|
32
|
IRBC (A)
|
Current through constant base resistance.
|
|
33
|
IRCC (A)
|
Current through collector contact resistance.
|
|
34
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
35
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
36
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
37
|
Qte (C)
|
Base-emitter depletion charge.
|
|
38
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
39
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
40
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
41
|
Qtc (C)
|
Base-collector depletion charge.
|
|
42
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
43
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
44
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
45
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
46
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
47
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
48
|
gx (1/Ω)
|
Forward transconductance.
|
|
49
|
gy (1/Ω)
|
Reverse transconductance.
|
|
50
|
gz (1/Ω)
|
Reverse transconductance.
|
|
51
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
52
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
53
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
54
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
55
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
56
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
57
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
58
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
59
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
60
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
61
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
62
|
Rbv (Ω)
|
Base resistance.
|
|
63
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
64
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
65
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
66
|
RE (Ω)
|
Emitter resistance.
|
|
67
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
68
|
RCC (Ω)
|
Collector contact resistance.
|
|
69
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
70
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
71
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
72
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
73
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
74
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
75
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
76
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
77
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
78
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
79
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
80
|
Cb1b2 (F)
|
Capacitance AC current crowding.
|
|
81
|
Cb1b2x (F)
|
Cross-capacitance of the AC current crowding.
|
|
82
|
Cb1b2y (F)
|
Cross-capacitance of the AC current crowding.
|
|
83
|
Cb1b2z (F)
|
Cross-capacitance of the AC current crowding.
|
|
84
|
gm (1/Ω)
|
Transconductance.
|
|
85
|
beta
|
Current amplification.
|
|
86
|
gout (1/Ω)
|
Output conductance.
|
|
87
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
88
|
RB (Ω)
|
Base resistance.
|
|
89
|
Cbe (F)
|
Base-emitter capacitance.
|
|
90
|
Cbc (F)
|
Base-collector capacitance.
|
|
91
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
92
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
93
|
XiWepi (M)
|
Thickness of injection layer.
|
|
94
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
95
|
Pdiss (W)
|
Dissipation.
|
|
96
|
pwr (W)
|
Power dissipation.
|
|
97
|
TK (K)
|
Actual temperature.
|
|
98
|
Isub (A)
|
Substrate current.
|
|
99
|
XIsub (A)
|
Substrate current.
|
|
100
|
Isf (A)
|
Substrate failure current.
|
|
101
|
Qts (C)
|
Collector-substrate depletion charge.
|
|
102
|
gS (1/Ω)
|
Conductance parasitic PNP transistor.
|
|
103
|
XgS (1/Ω)
|
Conductance parasitic PNP transistor.
|
|
104
|
gSf (1/Ω)
|
Conductance of s-c junction.
|
|
105
|
Cts (F)
|
Capacitance s-c junction.
|
|
106
|
jtype
|
Type: +1=npn and -1=pnp.
|
|
107
|
w_estimate (M)
|
|
|
108
|
l_estimate (M)
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
BetaDC OP-5
|
SCbe OP-71
|
dta M-5
|
mtau M-49
|
Cb1b2 OP-80
|
SIb1 OP-24
|
dvgbf M-65
|
mult I-1
|
Cb1b2x OP-81
|
SQte OP-38
|
dvgbr M-66
|
mvt0 M-97
|
Cb1b2y OP-82
|
Sgpi OP-51
|
dvgte M-73
|
nzeb M-19
|
Cb1b2z OP-83
|
TK OP-97
|
exavl M-8
|
paramchk M-2
|
Cbc OP-90
|
Vb1c1 OP-15
|
exmod M-6
|
pc M-44
|
Cbcex OP-78
|
Vb1c4 OP-16
|
exphi M-7
|
pe M-39
|
Cbcx OP-75
|
Vb2c1 OP-14
|
exsub M-9
|
printscaled I-2
|
Cbcy OP-76
|
Vb2c2 OP-13
|
fT OP-91
|
ps M-87
|
Cbcz OP-77
|
Vb2c2star OP-94
|
ftaun M-81
|
pwr OP-96
|
Cbe OP-89
|
Vb2e1 OP-12
|
gS OP-102
|
rbc M-28
|
Cbex OP-72
|
Vbc OP-7
|
gSf OP-104
|
rbv M-29
|
Cbey OP-73
|
Vbe OP-6
|
gm OP-84
|
rcbli M-32
|
Cbez OP-74
|
Vbs OP-10
|
gmu OP-87
|
rcblx M-31
|
Cts OP-105
|
Vc3c4 OP-17
|
gmuex OP-58
|
rcc M-30
|
IRBC OP-32
|
Vc4c1 OP-18
|
gmux OP-55
|
rcv M-33
|
IRCBLI OP-35
|
Vce OP-8
|
gmuy OP-56
|
re M-27
|
IRCBLX OP-34
|
Ve1e OP-19
|
gmuz OP-57
|
region I-4
|
IRCC OP-33
|
Vsc OP-11
|
gout OP-86
|
rth M-91
|
IRE OP-31
|
Vse OP-9
|
gpix OP-52
|
scrcv M-34
|
Iavl OP-30
|
XCbcex OP-79
|
gpiy OP-53
|
sfh M-26
|
Ib OP-2
|
XIex OP-29
|
gpiz OP-54
|
taub M-51
|
Ib1 OP-23
|
XIsub OP-99
|
grbvx OP-63
|
taue M-50
|
Ib1b2 OP-22
|
XQex OP-47
|
grbvy OP-64
|
taur M-53
|
Ib2 OP-26
|
XQtex OP-45
|
grbvz OP-65
|
tempeff O-1
|
Ib3 OP-27
|
XgS OP-103
|
grcvy OP-60
|
tepi M-52
|
Ic OP-1
|
Xgmuex OP-59
|
grcvz OP-61
|
tnom M-98
|
Ic1c2 OP-21
|
XiWepi OP-93
|
gx OP-48
|
tr M-99
|
Ie OP-3
|
ab M-59
|
gy OP-49
|
tref M-4
|
Iex OP-28
|
ac M-63
|
gz OP-50
|
trise I-3
|
In OP-20
|
acbl M-64
|
ibf M-15
|
tvgeb M-72
|
Iqs OP-92
|
ae M-58
|
ibr M-21
|
type M-95
|
Is OP-4
|
aepi M-61
|
icss M-83
|
vavl M-25
|
Isf OP-100
|
aex M-62
|
ihc M-35
|
vdc M-43
|
Isub OP-98
|
af M-74
|
ik M-11
|
vde M-38
|
Izteb OP-25
|
aqbo M-57
|
iks M-84
|
vds M-86
|
Pdiss OP-95
|
area I-6
|
imax M-96
|
vef M-13
|
Qb1b2 OP-43
|
as M-89
|
is M-10
|
ver M-12
|
Qbc OP-40
|
asub M-90
|
iss M-82
|
vexlim M-94
|
Qbe OP-39
|
ath M-93
|
izeb M-18
|
vgb M-67
|
Qe OP-36
|
avgeb M-71
|
jtype OP-106
|
vgc M-68
|
Qepi OP-42
|
axi M-36
|
kavl M-77
|
vgj M-69
|
Qex OP-46
|
beta OP-85
|
kavlver M-78
|
vgs M-88
|
Qtc OP-41
|
bf M-14
|
kc M-79
|
vgzeb M-70
|
Qte OP-37
|
bri M-20
|
ke M-80
|
vlr M-22
|
Qtex OP-44
|
cbco M-48
|
kf M-75
|
w_estimate OP-107
|
Qts OP-101
|
cbeo M-41
|
kfn M-76
|
wavl M-24
|
RB OP-88
|
cjc M-42
|
l_estimate OP-108
|
xcjc M-47
|
RBC OP-67
|
cje M-37
|
level M-1
|
xcje M-40
|
RCBLI OP-70
|
cjs M-85
|
m I-5
|
xext M-23
|
RCBLX OP-69
|
compatible M-100
|
mc M-46
|
xibi M-17
|
RCC OP-68
|
cth M-92
|
meff O-2
|
xp M-45
|
RE OP-66
|
dais M-60
|
mexlev M-3
|
xqb M-56
|
Rbv OP-62
|
deg M-54
|
mlf M-16
|
xrec M-55
|
Compact Bipolar-Transistor Model (bjt505)
This is SimKit 5.0.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e ModelName parameter=value ...
Instance Parameters
|
1
|
dta=0 degC
|
Difference between the local and global ambient temperatures.
|
|
2
|
mult=1
|
Multiplication factor.
|
|
3
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
4
|
trise=0
|
Difference between the local ambient and global ambient temperature.
|
|
5
|
region=fwd
|
Estimated DC operating region, used as a convergence aid.Possible values are off, sat, rev, and fwd.
|
|
6
|
m=1
|
Alias of mult.
|
|
7
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt505 parameter=value ...
Model Parameters
|
1
|
level=505
|
Model level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
version=505
|
Model version.
|
|
4
|
type=npn
|
Flag for NPN (1) or PNP (-1) transistor type.Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
5
|
tref=25 degC
|
Reference temperature.
|
|
6
|
exmod=1
|
Flag for extended modeling of the reverse current gain.
|
|
7
|
exphi=1
|
Flag for distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modeling of avalanche currents.
|
|
9
|
exsub=1
|
Flag for extended modeling of substrate currents.
|
|
10
|
is=2.2e-17 A
|
Saturation current of main current.
|
|
11
|
nff=1
|
Non-ideality factor of forward main current.
|
|
12
|
nfr=1
|
Non-ideality factor of reverse main current.
|
|
13
|
ik=0.1 A
|
CE high injection knee current.
|
|
14
|
ver=2.5 V
|
Reverse Early voltage.
|
|
15
|
vef=44 V
|
Forward Early voltage.
|
|
16
|
ibi=1e-19 A
|
Saturation current of ideal base current.
|
|
17
|
nbi=1
|
Non-ideality factor of ideal base current.
|
|
18
|
ibis=0 A
|
Saturation current of ideal side wall base current.
|
|
19
|
nbis=1
|
Non-ideality factor of ideal side wall base current.
|
|
20
|
ibf=2.7e-15 A
|
Saturation current of non-ideal forward base current.
|
|
21
|
mlf=2
|
Non-ideality factor of non-ideal forward base current.
|
|
22
|
ibfs=0 A
|
Saturation current of non-ideal side wall forward base current.
|
|
23
|
mlfs=2
|
Non-ideality factor of non-ideal side wall forward base current.
|
|
24
|
ibx=3.14e-18 A
|
Saturation current of extrinsic reverse base current.
|
|
25
|
ikbx=0.0143 A
|
Extrinsic CB high injection knee current.
|
|
26
|
ibr=1e-15 A
|
Saturation current of non-ideal reverse base current.
|
|
27
|
mlr=2
|
Non-ideality factor of non-ideal reverse base current.
|
|
28
|
xext=0.63
|
Part of currents and charges that belong to extrinsic region.
|
|
29
|
izeb=0 A
|
Pre-factor of EB Zener tunneling current.
|
|
30
|
nzeb=22
|
Coefficient of EB Zener tunneling current.
|
|
31
|
izcb=0 A
|
Pre-factor of CB Zener tunneling current.
|
|
32
|
nzcb=22
|
Coefficient of CB Zener tunneling current.
|
|
33
|
swavl=1
|
Switch of avalanche factor Gem model.
|
|
34
|
aavl=400
|
aavl of swavl=1 Gem model.
|
|
35
|
cavl=-0.37
|
cavl of swavl=1 Gem model.
|
|
36
|
itoavl=0.5 A
|
Current dependence parameter of swavl=1 Gem model.
|
|
37
|
bavl=25
|
bavl of swavl=1 Gem model.
|
|
38
|
vdcavl=0.1 V
|
CB diffusion voltage dedicated for swavl=1 Gem model.
|
|
39
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
40
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
41
|
sfh=0.3
|
Current spreading factor of avalanche model when exavl=1.
|
|
42
|
re=5 Ω
|
Emitter resistance.
|
|
43
|
rbc=23 Ω
|
Constant part of base resistance.
|
|
44
|
rbv=18 Ω
|
Zero-bias value of variable part of the base resistance.
|
|
45
|
rcc=12 Ω
|
Constant part of collector resistance.
|
|
46
|
rcblx=0 Ω
|
Resistance Collector Buried Layer extrinsic.
|
|
47
|
rcbli=0 Ω
|
Resistance Collector Buried Layer Intrinsic.
|
|
48
|
rcv=150 Ω
|
Resistance of un-modulated epilayer.
|
|
49
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of epilayer.
|
|
50
|
ihc=0.004 A
|
Critical current for velocity saturation in epilayer.
|
|
51
|
axi=0.3
|
Smoothness parameter for onset of quasi-saturation.
|
|
52
|
vdc=0.68 V
|
CB diffusion voltage.
|
|
53
|
cje=7.3e-14 F
|
Zero-bias EB depletion capacitance.
|
|
54
|
vde=0.95 V
|
EB diffusion voltage.
|
|
55
|
pe=0.4
|
EB grading coefficient.
|
|
56
|
xcje=0.4
|
Sidewall fraction of EB depletion capacitance.
|
|
57
|
cbeo=0 F
|
EB overlap capacitance.
|
|
58
|
cjc=7.8e-14 F
|
Zero-bias CB depletion capacitance.
|
|
59
|
vdcctc=0.68 V
|
CB diffusion voltage of depletion capacitance.
|
|
60
|
pc=0.5
|
CB grading coefficient.
|
|
61
|
swvchc=0
|
Switch of Vch for CB depletion capacitance.
|
|
62
|
swvjunc=0
|
Switch of Vjunc for collector junction capacitance.
|
|
63
|
xp=0.35
|
Constant part of Cjc.
|
|
64
|
mc=0.5
|
Coefficient for current modulation of CB depletion capacitance.
|
|
65
|
xcjc=0.032
|
Fraction of CB depletion capacitance under the emitter.
|
|
66
|
cbco=0 F
|
CB overlap capacitance.
|
|
67
|
mtau=1
|
Non-ideality factor of emitter stored charge.
|
|
68
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
69
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
70
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
71
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic stored base charge.
|
|
72
|
deg=0 eV
|
Bandgap difference over the base.
|
|
73
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
74
|
xqb=0.333
|
Emitter-fraction of base diffusion charge.
|
|
75
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
76
|
aqbo=0.3
|
Temperature coefficient of zero-bias base charge.
|
|
77
|
ae=0
|
Temperature coefficient of resistivity of the emitter.
|
|
78
|
ab=1
|
Temperature coefficient of resistivity of the base.
|
|
79
|
aepi=2.5
|
Temperature coefficient of resistivity of the epilayer.
|
|
80
|
aex=0.62
|
Temperature coefficient of resistivity of the extrinsic base.
|
|
81
|
ac=2
|
Temperature coefficient of resistivity of the collector contact.
|
|
82
|
acx=1.3
|
Temperature coefficient of extrinsic reverse base current.
|
|
83
|
acbl=2
|
Temperature coefficient of resistivity of the collector buried layer.
|
|
84
|
vgb=1.17 V
|
Band-gap voltage of base.
|
|
85
|
vgc=1.18 V
|
Band-gap voltage of collector.
|
|
86
|
vge=1.12 V
|
Band-gap voltage of emitter.
|
|
87
|
vgcx=1.12 V
|
Band-gap voltage of extrinsic collector.
|
|
88
|
vgj=1.15 V
|
Band-gap voltage recombination EB junction.
|
|
89
|
vgzeb=1.15 V
|
Band-gap voltage at Tref for EB tunneling.
|
|
90
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
91
|
tvgeb=636 K
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
92
|
vgzcb=1.15 V
|
Band-gap voltage at Tref for CB tunneling.
|
|
93
|
avgcb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
94
|
tvgcb=636 K
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
95
|
dvgte=0.05 V
|
Band-gap voltage difference of emitter stored charge.
|
|
96
|
dais=0
|
Fine tuning of temperature dependence of CE saturation current.
|
|
97
|
tnff=0 /K
|
Temperature coefficient of nff.
|
|
98
|
tnfr=0 /K
|
Temperature coefficient of nfr.
|
|
99
|
tbavl=0.0005
|
Temperature scaling parameter of bavl when swavl=1.
|
|
100
|
af=2
|
Exponent of Flicker-noise of ideal base current.
|
|
101
|
afn=2
|
Exponent of Flicker-noise of non-ideal base current.
|
|
102
|
kf=2e-11
|
Flicker-noise coefficient of ideal base current.
|
|
103
|
kfn=2e-11
|
Flicker-noise coefficient of non-ideal base current.
|
|
104
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
105
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
106
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
107
|
iss=4.8e-17 A
|
Saturation current of parasitic BCS transistor main current.
|
|
108
|
icss=0 A
|
CS ideal saturation current.
|
|
109
|
iks=0.000545 A
|
Knee current for BCS transistor main current.
|
|
110
|
cjs=3.15e-13 F
|
Zero-bias CS depletion capacitance.
|
|
111
|
vds=0.62 V
|
CS diffusion voltage.
|
|
112
|
ps=0.34
|
CS grading coefficient.
|
|
113
|
vgs=1.2 V
|
Band-gap voltage of the substrate.
|
|
114
|
as=1.58
|
Substrate temperature coefficient.
|
|
115
|
asub=2
|
Temperature coefficient for mobility of minorities in the substrate.
|
|
116
|
isibrel=0 A
|
Saturation current of base current for reliability simulation.
|
|
117
|
nfibrel=2
|
Non-ideality factor of base current for reliability simulation.
|
|
118
|
gmin=1e-13
|
Minimum conductance.
|
|
119
|
imax=1000 A
|
Explosion current.
|
|
120
|
tnom (degC)
|
Parameters measurement temperature.
|
|
121
|
tr (degC)
|
Alias of tnom.
|
|
122
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator.Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
jtype
|
type: +1=npn and -1=pnp.
|
|
2
|
r_e (Ω)
|
Emitter resistance.
|
|
3
|
rb_c (Ω)
|
Constant base resistance.
|
|
4
|
rc_c (Ω)
|
Collector contact resistance.
|
|
5
|
rc_blx (Ω)
|
Extrinsic buried layer resistance.
|
|
6
|
rc_bli (Ω)
|
Intrinsic buried layer resistance.
|
|
7
|
rc (Ω)
|
Collector resistance.
|
|
8
|
tk (K)
|
Actual temperature.
|
|
9
|
ic (A)
|
External DC collector current.
|
|
10
|
ib (A)
|
External DC base current.
|
|
11
|
betadc
|
External DC current gain Ic/Ib.
|
|
12
|
ie (A)
|
External DC emitter current.
|
|
13
|
vbe (V)
|
External base-emitter bias.
|
|
14
|
vce (V)
|
External collector-emitter bias.
|
|
15
|
vbc (V)
|
External base-collector bias.
|
|
16
|
isx (A)
|
External DC substrate current.
|
|
17
|
vse (V)
|
External substrate-emitter bias.
|
|
18
|
vbs (V)
|
External base-substrate bias.
|
|
19
|
vsc (V)
|
External substrate-collector bias.
|
|
20
|
vb2e1 (V)
|
Internal base-emitter bias.
|
|
21
|
vb2c2 (V)
|
Internal base-collector bias.
|
|
22
|
vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
23
|
vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
24
|
vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
25
|
vc3c4 (V)
|
Bias over extrinsic buried layer.
|
|
26
|
ve1e (V)
|
Bias over emitter resistance.
|
|
27
|
in (A)
|
Main current.
|
|
28
|
ic1c2 (A)
|
Epilayer current.
|
|
29
|
ib1b2 (A)
|
Pinched-base current.
|
|
30
|
ib1 (A)
|
Ideal forward base current.
|
|
31
|
ib1s (A)
|
Ideal side-wall base current.
|
|
32
|
ib2s (A)
|
Non-ideal side-wall base current.
|
|
33
|
ibrel (A)
|
Additional non-ideal base current for reliability simulation.
|
|
34
|
izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
35
|
iztcb (A)
|
Zener tunneling current in the collector base junction.
|
|
36
|
ib2 (A)
|
Non-ideal forward base current.
|
|
37
|
ib3 (A)
|
Non-ideal reverse base current.
|
|
38
|
iavl (A)
|
Avalanche current.
|
|
39
|
iex (A)
|
Extrinsic reverse base current.
|
|
40
|
xiex (A)
|
Extrinsic reverse base current.
|
|
41
|
isub (A)
|
Substrate current.
|
|
42
|
xisub (A)
|
Substrate current.
|
|
43
|
isf (A)
|
Substrate failure current.
|
|
44
|
ire (A)
|
Current through emitter resistance.
|
|
45
|
irbc (A)
|
Current through constant base resistance.
|
|
46
|
ircblx (A)
|
Current through extrinsic buried layer resistance.
|
|
47
|
ircbli (A)
|
Current through intrinsic buried layer resistance.
|
|
48
|
ircc (A)
|
Current through collector contact resistance.
|
|
49
|
qe (coul)
|
Emitter charge or emitter neutral charge.
|
|
50
|
qte (coul)
|
Base-emitter depletion charge.
|
|
51
|
sqte (coul)
|
Sidewall base-emitter depletion charge.
|
|
52
|
qbe (coul)
|
Base-emitter diffusion charge.
|
|
53
|
qbc (coul)
|
Base_collector diffusion charge.
|
|
54
|
qtc (coul)
|
Base-collector depletion charge.
|
|
55
|
qepi (coul)
|
Epilayer diffusion charge.
|
|
56
|
qb1b2 (coul)
|
ac current crowding charge.
|
|
57
|
qtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
58
|
xqtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
59
|
qex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
60
|
xqex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
61
|
qts (coul)
|
Collector-substrate depletion charge.
|
|
62
|
gx (S)
|
Forward transconductance.
|
|
63
|
gy (S)
|
Reverse transconductance.
|
|
64
|
gz (S)
|
Reverse transconductance.
|
|
65
|
sgpi (S)
|
Conductance sidewall b-e junction.
|
|
66
|
gpix (S)
|
Conductance floor b-e junction.
|
|
67
|
gpiy (S)
|
Early effect on recombination base current.
|
|
68
|
gpiz (S)
|
Early effect on recombination base current.
|
|
69
|
gmux (S)
|
Early effect on avalanche current limiting.
|
|
70
|
gmuy (S)
|
Conductance of avalanche current.
|
|
71
|
gmuz (S)
|
Conductance of avalanche current.
|
|
72
|
gmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
73
|
xgmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
74
|
grcvy (S)
|
Conductance of epilayer current.
|
|
75
|
grcvz (S)
|
Conductance of epilayer current.
|
|
76
|
rb_v (Ω)
|
Variable base resistance.
|
|
77
|
grbvx (S)
|
Early effect on variable base resistance.
|
|
78
|
grbvy (S)
|
Early effect on variable base resistance.
|
|
79
|
grbvz (S)
|
Early effect on variable base resistance.
|
|
80
|
gs (S)
|
Conductance parasitic PNP transistor.
|
|
81
|
xgs (S)
|
Conductance parasitic PNP transistor.
|
|
82
|
gsf (S)
|
Conductance substrate failure current.
|
|
83
|
scbe (F)
|
Capacitance sidewall b-e junction.
|
|
84
|
cbex (F)
|
Capacitance floor b-e junction.
|
|
85
|
cbey (F)
|
Early effect on b-e diffusion charge.
|
|
86
|
cbez (F)
|
Early effect on b-e diffusion charge.
|
|
87
|
cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
88
|
cbcy (F)
|
Capacitance floor b-c junction.
|
|
89
|
cbcz (F)
|
Capacitance floor b-c junction.
|
|
90
|
cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
91
|
xcbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
92
|
cb1b2 (F)
|
Capacitance AC current crowding.
|
|
93
|
cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
94
|
cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
95
|
cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
96
|
cts (F)
|
Capacitance s-c junction.
|
|
97
|
gm (S)
|
transconductance.
|
|
98
|
beta
|
Current amplification.
|
|
99
|
gout (S)
|
Output conductance.
|
|
100
|
gmu (S)
|
Feedback transconductance.
|
|
101
|
rb (Ω)
|
Base resistance.
|
|
102
|
cbe (F)
|
Base-emitter capacitance.
|
|
103
|
cbc (F)
|
Base-collector capacitance.
|
|
104
|
ft (Hz)
|
Good approximation for cut-off frequency.
|
|
105
|
iqs (A)
|
Current at onset of quasi-saturation.
|
|
106
|
xiwepi
|
Thickness of injection layer normalized to epi layer width.
|
|
107
|
vb2c2star (V)
|
Physical value of internal base-collector bias
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.
aavl M-34
|
gpiy OP-67
|
kfn M-103
|
tempeff O-1
|
ab M-78
|
gpiz OP-68
|
level M-1
|
tepi M-70
|
ac M-81
|
grbvx OP-77
|
m I-6
|
tk OP-8
|
acbl M-83
|
grbvy OP-78
|
mc M-64
|
tnff M-97
|
acx M-82
|
grbvz OP-79
|
meff O-2
|
tnfr M-98
|
ae M-77
|
grcvy OP-74
|
mlf M-21
|
tnom M-120
|
aepi M-79
|
grcvz OP-75
|
mlfs M-23
|
tr M-121
|
aex M-80
|
gs OP-80
|
mlr M-27
|
tref M-5
|
af M-100
|
gsf OP-82
|
mtau M-67
|
trise I-4
|
afn M-101
|
gx OP-62
|
mult I-2
|
tvgcb M-94
|
aqbo M-76
|
gy OP-63
|
nbi M-17
|
tvgeb M-91
|
area I-7
|
gz OP-64
|
nbis M-19
|
type M-4
|
as M-114
|
iavl OP-38
|
nff M-11
|
vavl M-40
|
asub M-115
|
ib OP-10
|
nfibrel M-117
|
vb1c1 OP-23
|
avgcb M-93
|
ib1 OP-30
|
nfr M-12
|
vb2c1 OP-22
|
avgeb M-90
|
ib1b2 OP-29
|
nzcb M-32
|
vb2c2 OP-21
|
axi M-51
|
ib1s OP-31
|
nzeb M-30
|
vb2c2star OP-107
|
bavl M-37
|
ib2 OP-36
|
paramchk M-2
|
vb2e1 OP-20
|
beta OP-98
|
ib2s OP-32
|
pc M-60
|
vbc OP-15
|
betadc OP-11
|
ib3 OP-37
|
pe M-55
|
vbe OP-13
|
cavl M-35
|
ibf M-20
|
printscaled I-3
|
vbs OP-18
|
cb1b2 OP-92
|
ibfs M-22
|
ps M-112
|
vc3c4 OP-25
|
cb1b2x OP-93
|
ibi M-16
|
qb1b2 OP-56
|
vc4c1 OP-24
|
cb1b2y OP-94
|
ibis M-18
|
qbc OP-53
|
vce OP-14
|
cb1b2z OP-95
|
ibr M-26
|
qbe OP-52
|
vdc M-52
|
cbc OP-103
|
ibrel OP-33
|
qe OP-49
|
vdcavl M-38
|
cbcex OP-90
|
ibx M-24
|
qepi OP-55
|
vdcctc M-59
|
cbco M-66
|
ic OP-9
|
qex OP-59
|
vde M-54
|
cbcx OP-87
|
ic1c2 OP-28
|
qtc OP-54
|
vds M-111
|
cbcy OP-88
|
icss M-108
|
qte OP-50
|
ve1e OP-26
|
cbcz OP-89
|
ie OP-12
|
qtex OP-57
|
vef M-15
|
cbe OP-102
|
iex OP-39
|
qts OP-61
|
ver M-14
|
cbeo M-57
|
ihc M-50
|
r_e OP-2
|
version M-3
|
cbex OP-84
|
ik M-13
|
rb OP-101
|
vgb M-84
|
cbey OP-85
|
ikbx M-25
|
rb_c OP-3
|
vgc M-85
|
cbez OP-86
|
iks M-109
|
rb_v OP-76
|
vgcx M-87
|
cjc M-58
|
imax M-119
|
rbc M-43
|
vge M-86
|
cje M-53
|
in OP-27
|
rbv M-44
|
vgj M-88
|
cjs M-110
|
iqs OP-105
|
rc OP-7
|
vgs M-113
|
compatible M-122
|
irbc OP-45
|
rc_bli OP-6
|
vgzcb M-92
|
cts OP-96
|
ircbli OP-47
|
rc_blx OP-5
|
vgzeb M-89
|
dais M-96
|
ircblx OP-46
|
rc_c OP-4
|
vsc OP-19
|
deg M-72
|
ircc OP-48
|
rcbli M-47
|
vse OP-17
|
dta I-1
|
ire OP-44
|
rcblx M-46
|
wavl M-39
|
dvgte M-95
|
is M-10
|
rcc M-45
|
xcbcex OP-91
|
exavl M-8
|
isf OP-43
|
rcv M-48
|
xcjc M-65
|
exmod M-6
|
isibrel M-116
|
re M-42
|
xcje M-56
|
exphi M-7
|
iss M-107
|
region I-5
|
xext M-28
|
exsub M-9
|
isub OP-41
|
scbe OP-83
|
xgmuex OP-73
|
ft OP-104
|
isx OP-16
|
scrcv M-49
|
xgs OP-81
|
ftaun M-106
|
itoavl M-36
|
sfh M-41
|
xiex OP-40
|
gm OP-97
|
izcb M-31
|
sgpi OP-65
|
xisub OP-42
|
gmin M-118
|
izeb M-29
|
sqte OP-51
|
xiwepi OP-106
|
gmu OP-100
|
iztcb OP-35
|
swavl M-33
|
xp M-63
|
gmuex OP-72
|
izteb OP-34
|
swvchc M-61
|
xqb M-74
|
gmux OP-69
|
jtype OP-1
|
swvjunc M-62
|
xqex OP-60
|
gmuy OP-70
|
kavl M-104
|
taub M-69
|
xqtex OP-58
|
gmuz OP-71
|
kc M-105
|
taue M-68
|
xrec M-73
|
gout OP-99
|
ke M-75
|
taur M-71
|
|
gpix OP-66
|
kf M-102
|
tbavl M-99
|
|
Compact Bipolar-Transistor Model (bjt505t)
Description
This is SiMKit 5.0
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e s dt ModelName parameter=value ...
Instance Parameters
|
1
|
dta=0 degC
|
Difference between the local and global ambient temperatures.
|
|
2
|
mult=1
|
Multiplication factor.
|
|
3
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
4
|
trise=0
|
Difference between the local ambient and global ambient temperature.
|
|
5
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
6
|
m=1
|
Alias of mult.
|
|
7
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjt505t parameter=value ...
Model Parameters
|
1
|
level=505
|
Model level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
version=505
|
Model version.
|
|
4
|
type=npn
|
Flag for NPN (1) or PNP (-1) transistor type.Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
5
|
tref=25 degC
|
Reference temperature.
|
|
6
|
exmod=1
|
Flag for extended modeling of the reverse current gain.
|
|
7
|
exphi=1
|
Flag for distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modeling of avalanche currents.
|
|
9
|
exsub=1
|
Flag for extended modeling of substrate currents.
|
|
10
|
is=2.2e-17 A
|
Saturation current of main current.
|
|
11
|
nff=1
|
Non-ideality factor of forward main current.
|
|
12
|
nfr=1
|
Non-ideality factor of reverse main current.
|
|
13
|
ik=0.1 A
|
CE high injection knee current.
|
|
14
|
ver=2.5 V
|
Reverse Early voltage.
|
|
15
|
vef=44 V
|
Forward Early voltage.
|
|
16
|
ibi=1e-19 A
|
Saturation current of ideal base current.
|
|
17
|
nbi=1
|
Non-ideality factor of ideal base current.
|
|
18
|
ibis=0 A
|
Saturation current of ideal side wall base current.
|
|
19
|
nbis=1
|
Non-ideality factor of ideal side wall base current.
|
|
20
|
ibf=2.7e-15 A
|
Saturation current of non-ideal forward base current.
|
|
21
|
mlf=2
|
Non-ideality factor of non-ideal forward base current.
|
|
22
|
ibfs=0 A
|
Saturation current of non-ideal side wall forward base current.
|
|
23
|
mlfs=2
|
Non-ideality factor of non-ideal side wall forward base current.
|
|
24
|
ibx=3.14e-18 A
|
Saturation current of extrinsic reverse base current.
|
|
25
|
ikbx=0.0143 A
|
Extrinsic CB high injection knee current.
|
|
26
|
ibr=1e-15 A
|
Saturation current of non-ideal reverse base current.
|
|
27
|
mlr=2
|
Non-ideality factor of non-ideal reverse base current.
|
|
28
|
xext=0.63
|
Part of currents and charges that belong to extrinsic region.
|
|
29
|
izeb=0 A
|
Pre-factor of EB Zener tunneling current.
|
|
30
|
nzeb=22
|
Coefficient of EB Zener tunneling current.
|
|
31
|
izcb=0 A
|
Pre-factor of CB Zener tunneling current.
|
|
32
|
nzcb=22
|
Coefficient of CB Zener tunneling current.
|
|
33
|
swavl=1
|
Switch of avalanche factor Gem model.
|
|
34
|
aavl=400
|
aavl of swavl=1 Gem model.
|
|
35
|
cavl=-0.37
|
cavl of swavl=1 Gem model.
|
|
36
|
itoavl=0.5 A
|
Current dependence parameter of swavl=1 Gem model.
|
|
37
|
bavl=25
|
bavl of swavl=1 Gem model.
|
|
38
|
vdcavl=0.1 V
|
CB diffusion voltage dedicated for swavl=1 Gem model.
|
|
39
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
40
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
41
|
sfh=0.3
|
Current spreading factor of avalanche model when exavl=1.
|
|
42
|
re=5 Ω
|
Emitter resistance.
|
|
43
|
rbc=23 Ω
|
Constant part of base resistance.
|
|
44
|
rbv=18 Ω
|
Zero-bias value of variable part of the base resistance.
|
|
45
|
rcc=12 Ω
|
Constant part of collector resistance.
|
|
46
|
rcblx=0 Ω
|
Resistance Collector Buried Layer extrinsic.
|
|
47
|
rcbli=0 Ω
|
Resistance Collector Buried Layer Intrinsic.
|
|
48
|
rcv=150 Ω
|
Resistance of un-modulated epilayer.
|
|
49
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of epilayer.
|
|
50
|
ihc=0.004 A
|
Critical current for velocity saturation in epilayer.
|
|
51
|
axi=0.3
|
Smoothness parameter for onset of quasi-saturation.
|
|
52
|
vdc=0.68 V
|
CB diffusion voltage.
|
|
53
|
cje=7.3e-14 F
|
Zero-bias EB depletion capacitance.
|
|
54
|
vde=0.95 V
|
EB diffusion voltage.
|
|
55
|
pe=0.4
|
EB grading coefficient.
|
|
56
|
xcje=0.4
|
Sidewall fraction of EB depletion capacitance.
|
|
57
|
cbeo=0 F
|
EB overlap capacitance.
|
|
58
|
cjc=7.8e-14 F
|
Zero-bias CB depletion capacitance.
|
|
59
|
vdcctc=0.68 V
|
CB diffusion voltage of depletion capacitance.
|
|
60
|
pc=0.5
|
CB grading coefficient.
|
|
61
|
swvchc=0
|
Switch of Vch for CB depletion capacitance.
|
|
62
|
swvjunc=0
|
Switch of Vjunc for collector junction capacitance.
|
|
63
|
xp=0.35
|
Constant part of Cjc.
|
|
64
|
mc=0.5
|
Coefficient for current modulation of CB depletion capacitance.
|
|
65
|
xcjc=0.032
|
Fraction of CB depletion capacitance under the emitter.
|
|
66
|
cbco=0 F
|
CB overlap capacitance.
|
|
67
|
mtau=1
|
Non-ideality factor of emitter stored charge.
|
|
68
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
69
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
70
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
71
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic stored base charge.
|
|
72
|
deg=0 eV
|
Bandgap difference over the base.
|
|
73
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
74
|
xqb=0.333
|
Emitter-fraction of base diffusion charge.
|
|
75
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
76
|
aqbo=0.3
|
Temperature coefficient of zero-bias base charge.
|
|
77
|
ae=0
|
Temperature coefficient of resistivity of the emitter.
|
|
78
|
ab=1
|
Temperature coefficient of resistivity of the base.
|
|
79
|
aepi=2.5
|
Temperature coefficient of resistivity of the epilayer.
|
|
80
|
aex=0.62
|
Temperature coefficient of resistivity of the extrinsic base.
|
|
81
|
ac=2
|
Temperature coefficient of resistivity of the collector contact.
|
|
82
|
acx=1.3
|
Temperature coefficient of extrinsic reverse base current.
|
|
83
|
acbl=2
|
Temperature coefficient of resistivity of the collector buried layer.
|
|
84
|
vgb=1.17 V
|
Band-gap voltage of base.
|
|
85
|
vgc=1.18 V
|
Band-gap voltage of collector.
|
|
86
|
vge=1.12 V
|
Band-gap voltage of emitter.
|
|
87
|
vgcx=1.12 V
|
Band-gap voltage of extrinsic collector.
|
|
88
|
vgj=1.15 V
|
Band-gap voltage recombination EB junction.
|
|
89
|
vgzeb=1.15 V
|
Band-gap voltage at Tref for EB tunneling.
|
|
90
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
91
|
tvgeb=636 K
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
92
|
vgzcb=1.15 V
|
Band-gap voltage at Tref for CB tunneling.
|
|
93
|
avgcb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
94
|
tvgcb=636 K
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
95
|
dvgte=0.05 V
|
Band-gap voltage difference of emitter stored charge.
|
|
96
|
dais=0
|
Fine tuning of temperature dependence of CE saturation current.
|
|
97
|
tnff=0 /K
|
Temperature coefficient of nff.
|
|
98
|
tnfr=0 /K
|
Temperature coefficient of nfr.
|
|
99
|
tbavl=0.0005
|
Temperature scaling parameter of bavl when swavl=1.
|
|
100
|
af=2
|
Exponent of Flicker-noise of ideal base current.
|
|
101
|
afn=2
|
Exponent of Flicker-noise of non-ideal base current.
|
|
102
|
kf=2e-11
|
Flicker-noise coefficient of ideal base current.
|
|
103
|
kfn=2e-11
|
Flicker-noise coefficient of non-ideal base current.
|
|
104
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
105
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
106
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
107
|
iss=4.8e-17 A
|
Saturation current of parasitic BCS transistor main current.
|
|
108
|
icss=0 A
|
CS ideal saturation current.
|
|
109
|
iks=0.000545 A
|
Knee current for BCS transistor main current.
|
|
110
|
cjs=3.15e-13 F
|
Zero-bias CS depletion capacitance.
|
|
111
|
vds=0.62 V
|
CS diffusion voltage.
|
|
112
|
ps=0.34
|
CS grading coefficient.
|
|
113
|
vgs=1.2 V
|
Band-gap voltage of the substrate.
|
|
114
|
as=1.58
|
Substrate temperature coefficient.
|
|
115
|
asub=2
|
Temperature coefficient for mobility of minorities in the substrate.
|
|
116
|
rth=300 K/W
|
Thermal resistance.
|
|
117
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
118
|
ath=0
|
Temperature coefficient of thermal resistance.
|
|
119
|
isibrel=0 A
|
Saturation current of base current for reliability simulation.
|
|
120
|
nfibrel=2
|
Non-ideality factor of base current for reliability simulation.
|
|
121
|
gmin=1e-13
|
Minimum conductance.
|
|
122
|
imax=1000 A
|
Explosion current.
|
|
123
|
tnom (degC)
|
Parameters measurement temperature.
|
|
124
|
tr (degC)
|
Alias of tnom.
|
|
125
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
jtype
|
type: +1=npn and -1=pnp.
|
|
2
|
ic (A)
|
External DC collector current.
|
|
3
|
ib (A)
|
External DC base current.
|
|
4
|
betadc
|
External DC current gain Ic/Ib.
|
|
5
|
ie (A)
|
External DC emitter current.
|
|
6
|
vbe (V)
|
External base-emitter bias.
|
|
7
|
vce (V)
|
External collector-emitter bias.
|
|
8
|
vbc (V)
|
External base-collector bias.
|
|
9
|
isx (A)
|
External DC substrate current.
|
|
10
|
vse (V)
|
External substrate-emitter bias.
|
|
11
|
vbs (V)
|
External base-substrate bias.
|
|
12
|
vsc (V)
|
External substrate-collector bias.
|
|
13
|
vb2e1 (V)
|
Internal base-emitter bias.
|
|
14
|
vb2c2 (V)
|
Internal base-collector bias.
|
|
15
|
vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
16
|
vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
17
|
vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
18
|
vc3c4 (V)
|
Bias over extrinsic buried layer.
|
|
19
|
ve1e (V)
|
Bias over emitter resistance.
|
|
20
|
in (A)
|
Main current.
|
|
21
|
ic1c2 (A)
|
Epilayer current.
|
|
22
|
ib1b2 (A)
|
Pinched-base current.
|
|
23
|
ib1 (A)
|
Ideal forward base current.
|
|
24
|
ib1s (A)
|
Ideal side-wall base current.
|
|
25
|
ib2s (A)
|
Non-ideal side-wall base current.
|
|
26
|
ibrel (A)
|
Additional non-ideal base current for reliability simulation.
|
|
27
|
izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
28
|
iztcb (A)
|
Zener tunneling current in the collector base junction.
|
|
29
|
ib2 (A)
|
Non-ideal forward base current.
|
|
30
|
ib3 (A)
|
Non-ideal reverse base current.
|
|
31
|
iavl (A)
|
Avalanche current.
|
|
32
|
iex (A)
|
Extrinsic reverse base current.
|
|
33
|
xiex (A)
|
Extrinsic reverse base current.
|
|
34
|
isub (A)
|
Substrate current.
|
|
35
|
xisub (A)
|
Substrate current.
|
|
36
|
isf (A)
|
Substrate failure current.
|
|
37
|
ire (A)
|
Current through emitter resistance.
|
|
38
|
irbc (A)
|
Current through constant base resistance.
|
|
39
|
ircblx (A)
|
Current through extrinsic buried layer resistance.
|
|
40
|
ircbli (A)
|
Current through intrinsic buried layer resistance.
|
|
41
|
ircc (A)
|
Current through collector contact resistance.
|
|
42
|
qe (coul)
|
Emitter charge or emitter neutral charge.
|
|
43
|
qte (coul)
|
Base-emitter depletion charge.
|
|
44
|
sqte (coul)
|
Sidewall base-emitter depletion charge.
|
|
45
|
qbe (coul)
|
Base-emitter diffusion charge.
|
|
46
|
qbc (coul)
|
Base_collector diffusion charge.
|
|
4
|
7 qtc (coul)
|
Base-collector depletion charge.
|
|
48
|
qepi (coul)
|
Epilayer diffusion charge.
|
|
49
|
qb1b2 (coul)
|
ac current crowding charge.
|
|
50
|
qtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
51
|
xqtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
52
|
qex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
53
|
xqex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
54
|
qts (coul)
|
Collector-substrate depletion charge.
|
|
55
|
gx (S)
|
Forward transconductance.
|
|
56
|
gy (S)
|
Reverse transconductance.
|
|
57
|
gz (S)
|
Reverse transconductance.
|
|
58
|
sgpi (S)
|
Conductance sidewall b-e junction.
|
|
59
|
gpix (S)
|
Conductance floor b-e junction.
|
|
60
|
gpiy (S)
|
Early effect on recombination base current.
|
|
61
|
gpiz (S)
|
Early effect on recombination base current.
|
|
62
|
gmux (S)
|
Early effect on avalanche current limiting.
|
|
63
|
gmuy (S)
|
Conductance of avalanche current.
|
|
64
|
gmuz (S)
|
Conductance of avalanche current.
|
|
65
|
gmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
66
|
xgmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
67
|
grcvy (S)
|
Conductance of epilayer current.
|
|
68
|
grcvz (S)
|
Conductance of epilayer current.
|
|
69
|
rb_v (Ω)
|
Variable base resistance.
|
|
70
|
grbvx (S)
|
Early effect on variable base resistance.
|
|
71
|
grbvy (S)
|
Early effect on variable base resistance.
|
|
72
|
grbvz (S)
|
Early effect on variable base resistance.
|
|
73
|
r_e (Ω)
|
Emitter resistance.
|
|
74
|
rb_c (Ω)
|
Constant base resistance.
|
|
75
|
rc_c (Ω)
|
Collector contact resistance.
|
|
76
|
rc_blx (Ω)
|
Extrinsic buried layer resistance.
|
|
77
|
rc_bli (Ω)
|
Intrinsic buried layer resistance.
|
|
78
|
gs (S)
|
Conductance parasitic PNP transistor.
|
|
79
|
xgs (S)
|
Conductance parasitic PNP transistor.
|
|
80
|
gsf (S)
|
Conductance substrate failure current.
|
|
81
|
scbe (F)
|
Capacitance sidewall b-e junction.
|
|
82
|
cbex (F)
|
Capacitance floor b-e junction.
|
|
83
|
cbey (F)
|
Early effect on b-e diffusion charge.
|
|
84
|
cbez (F)
|
Early effect on b-e diffusion charge.
|
|
85
|
cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
86
|
cbcy (F)
|
Capacitance floor b-c junction.
|
|
87
|
cbcz (F)
|
Capacitance floor b-c junction.
|
|
88
|
cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
89
|
xcbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
90
|
cb1b2 (F)
|
Capacitance AC current crowding.
|
|
91
|
cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
92
|
cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
93
|
cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
94
|
cts (F)
|
Capacitance s-c junction.
|
|
95
|
gm (S)
|
transconductance.
|
|
96
|
beta
|
Current amplification.
|
|
97
|
gout (S)
|
Output conductance.
|
|
98
|
gmu (S)
|
Feedback transconductance.
|
|
99
|
rb (Ω)
|
Base resistance.
|
|
100
|
rc (Ω)
|
Collector resistance.
|
|
101
|
cbe (F)
|
Base-emitter capacitance.
|
|
102
|
cbc (F)
|
Base-collector capacitance.
|
|
103
|
ft (Hz)
|
Good approximation for cut-off frequency.
|
|
104
|
iqs (A)
|
Current at onset of quasi-saturation.
|
|
105
|
xiwepi
|
Thickness of injection layer normalized to epi layer width.
|
|
106
|
vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
107
|
pdiss (W)
|
Dissipation.
|
|
108
|
tk (K)
|
Actual temperature.
|
|
109
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.
aavl M-34
|
gpix OP-59
|
kfn M-103
|
taur M-71
|
ab M-78
|
gpiy OP-60
|
level M-1
|
tbavl M-99
|
ac M-81
|
gpiz OP-61
|
m I-6
|
tempeff O-1
|
acbl M-83
|
grbvx OP-70
|
mc M-64
|
tepi M-70
|
acx M-82
|
grbvy OP-71
|
meff O-2
|
tk OP-108
|
ae M-77
|
grbvz OP-72
|
mlf M-21
|
tnff M-97
|
aepi M-79
|
grcvy OP-67
|
mlfs M-23
|
tnfr M-98
|
aex M-80
|
grcvz OP-68
|
mlr M-27
|
tnom M-123
|
af M-100
|
gs OP-78
|
mtau M-67
|
tr M-124
|
afn M-101
|
gsf OP-80
|
mult I-2
|
tref M-5
|
aqbo M-76
|
gx OP-55
|
nbi M-17
|
trise I-4
|
area I-7
|
gy OP-56
|
nbis M-19
|
tvgcb M-94
|
as M-114
|
gz OP-57
|
nff M-11
|
tvgeb M-91
|
asub M-115
|
iavl OP-31
|
nfibrel M-120
|
type M-4
|
ath M-118
|
ib OP-3
|
nfr M-12
|
vavl M-40
|
avgcb M-93
|
ib1 OP-23
|
nzcb M-32
|
vb1c1 OP-16
|
avgeb M-90
|
ib1b2 OP-22
|
nzeb M-30
|
vb2c1 OP-15
|
axi M-51
|
ib1s OP-24
|
paramchk M-2
|
vb2c2 OP-14
|
bavl M-37
|
ib2 OP-29
|
pc M-60
|
vb2c2star OP-106
|
beta OP-96
|
ib2s OP-25
|
pdiss OP-107
|
vb2e1 OP-13
|
betadc OP-4
|
ib3 OP-30
|
pe M-55
|
vbc OP-8
|
cavl M-35
|
ibf M-20
|
printscaled I-3
|
vbe OP-6
|
cb1b2 OP-90
|
ibfs M-22
|
ps M-112
|
vbs OP-11
|
cb1b2x OP-91
|
ibi M-16
|
pwr OP-109
|
vc3c4 OP-18
|
cb1b2y OP-92
|
ibis M-18
|
qb1b2 OP-49
|
vc4c1 OP-17
|
cb1b2z OP-93
|
ibr M-26
|
qbc OP-46
|
vce OP-7
|
cbc OP-102
|
ibrel OP-26
|
qbe OP-45
|
vdc M-52
|
cbcex OP-88
|
ibx M-24
|
qe OP-42
|
vdcavl M-38
|
cbco M-66
|
ic OP-2
|
qepi OP-48
|
vdcctc M-59
|
cbcx OP-85
|
ic1c2 OP-21
|
qex OP-52
|
vde M-54
|
cbcy OP-86
|
icss M-108
|
qtc OP-47
|
vds M-111
|
cbcz OP-87
|
ie OP-5
|
qte OP-43
|
ve1e OP-19
|
cbe OP-101
|
iex OP-32
|
qtex OP-50
|
vef M-15
|
cbeo M-57
|
ihc M-50
|
qts OP-54
|
ver M-14
|
cbex OP-82
|
ik M-13
|
r_e OP-73
|
version M-3
|
cbey OP-83
|
ikbx M-25
|
rb OP-99
|
vgb M-84
|
cbez OP-84
|
iks M-109
|
rb_c OP-74
|
vgc M-85
|
cjc M-58
|
imax M-122
|
rb_v OP-69
|
vgcx M-87
|
cje M-53
|
in OP-20
|
rbc M-43
|
vge M-86
|
cjs M-110
|
iqs OP-104
|
rbv M-44
|
vgj M-88
|
compatible M-125
|
irbc OP-38
|
rc OP-100
|
vgs M-113
|
cth M-117
|
ircbli OP-40
|
rc_bli OP-77
|
vgzcb M-92
|
cts OP-94
|
ircblx OP-39
|
rc_blx OP-76
|
vgzeb M-89
|
dais M-96
|
ircc OP-41
|
rc_c OP-75
|
vsc OP-12
|
deg M-72
|
ire OP-37
|
rcbli M-47
|
vse OP-10
|
dta I-1
|
is M-10
|
rcblx M-46
|
wavl M-39
|
dvgte M-95
|
isf OP-36
|
rcc M-45
|
xcbcex OP-89
|
exavl M-8
|
isibrel M-119
|
rcv M-48
|
xcjc M-65
|
exmod M-6
|
iss M-107
|
re M-42
|
xcje M-56
|
exphi M-7
|
isub OP-34
|
region I-5
|
xext M-28
|
exsub M-9
|
isx OP-9
|
rth M-116
|
xgmuex OP-66
|
ft OP-103
|
itoavl M-36
|
scbe OP-81
|
xgs OP-79
|
ftaun M-106
|
izcb M-31
|
scrcv M-49
|
xiex OP-33
|
gm OP-95
|
izeb M-29
|
sfh M-41
|
xisub OP-35
|
gmin M-121
|
iztcb OP-28
|
sgpi OP-58
|
xiwepi OP-105
|
gmu OP-98
|
izteb OP-27
|
sqte OP-44
|
xp M-63
|
gmuex OP-65
|
jtype OP-1
|
swavl M-33
|
xqb M-74
|
gmux OP-62
|
kavl M-104
|
swvchc M-61
|
xqex OP-53
|
gmuy OP-63
|
kc M-105
|
swvjunc M-62
|
xqtex OP-51
|
gmuz OP-64
|
ke M-75
|
taub M-69
|
xrec M-73
|
gout OP-97
|
kf M-102
|
taue M-68
|
|
Compact Bipolar-Transistor Model (bjtd504)
This is SimKit 5.0.
Instance Definition
Name c b e ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of multiplication factor.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd504 parameter=value ...
Model Parameters
|
1
|
level=504
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
Flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
10
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
11
|
ver=2.5 V
|
Reverse Early voltage.
|
|
12
|
vef=44 V
|
Forward Early voltage.
|
|
13
|
bf=215
|
Ideal forward current gain.
|
|
14
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
15
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
16
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
17
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
18
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
19
|
bri=7
|
Ideal reverse current gain.
|
|
20
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
21
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
22
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
23
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
24
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
25
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
26
|
re=5 Ω
|
Emitter resistance.
|
|
27
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
28
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
29
|
rcc=12 Ω
|
Collector contact resistance.
|
|
30
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
31
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
32
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
33
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
34
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
35
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
36
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
37
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
38
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
39
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
40
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
41
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
42
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
43
|
pc=0.5
|
Collector-base grading coefficient.
|
|
44
|
xp=0.35
|
Constant part of Cjc.
|
|
45
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
46
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
47
|
cbco=0
|
Collector-base overlap capacitance.
|
|
48
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
49
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
50
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
51
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
52
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
53
|
deg=0 eV
|
Bandgap difference over the base.
|
|
54
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
55
|
xqb=0.333
|
Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
|
|
56
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
57
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
58
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
59
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
60
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
61
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
62
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
63
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
64
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
65
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
66
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
67
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
68
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
69
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
70
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
71
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
72
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
73
|
af=2
|
Exponent of the Flicker-noise.
|
|
74
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
75
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
76
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
77
|
kavlver=504
|
Switch for avalanche noise of 504.11 and 504.12.
|
|
78
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
79
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
80
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
82
|
vexlim=400
|
Upper limit of exp() function argument for convergence.
|
|
83
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
84
|
imax=1000 A
|
Explosion current.
|
|
85
|
mvt0=0.0
|
Threshold mismatch intercept.
|
|
86
|
tnom (deg. C)
|
Alias of tnom.
|
|
87
|
tr (deg. C)
|
Alias of tnom.
|
|
88
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
5
|
Vbe (V)
|
External base-emitter bias.
|
|
6
|
Vbc (V)
|
External base-collector bias.
|
|
7
|
Vce (V)
|
External collector-emitter bias.
|
|
8
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
9
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
10
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
11
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
12
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
13
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
14
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
15
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
16
|
In (A)
|
Main current.
|
|
17
|
Ic1c2 (A)
|
Epilayer current.
|
|
18
|
Ib1b2 (A)
|
Pinched-base current.
|
|
19
|
Ib1 (A)
|
Ideal forward base current.
|
|
20
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
21
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
22
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
23
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
24
|
Iex (A)
|
Extrinsic reverse base current.
|
|
25
|
XIex (A)
|
Extrinsic reverse base current.
|
|
26
|
Iavl (A)
|
Avalanche current.
|
|
27
|
IRE (A)
|
Current through emitter resistance.
|
|
28
|
IRBC (A)
|
Current through constant base resistance.
|
|
29
|
IRCC (A)
|
Current through collector contact resistance.
|
|
30
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
31
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
32
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
33
|
Qte (C)
|
Base-emitter depletion charge.
|
|
34
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
35
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
36
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
37
|
Qtc (C)
|
Base-collector depletion charge.
|
|
38
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
39
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
40
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
41
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
42
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
43
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
44
|
gx (1/Ω)
|
Forward transconductance.
|
|
45
|
gy (1/Ω)
|
Reverse transconductance.
|
|
46
|
gz (1/Ω)
|
Reverse transconductance.
|
|
47
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
48
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
49
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
50
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
51
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
52
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
53
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
54
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
55
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
56
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
57
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
58
|
Rbv (Ω)
|
Base resistance.
|
|
59
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
60
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
61
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
62
|
RE (Ω)
|
Emitter resistance.
|
|
63
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
64
|
RCC (Ω)
|
Collector contact resistance.
|
|
65
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
66
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
67
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
68
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
69
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
70
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
71
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
72
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
73
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
74
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
75
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
76
|
Cb1b2 (F)
|
Capacitance AC current crowding.
|
|
77
|
Cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
78
|
Cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
79
|
Cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
80
|
gm (1/Ω)
|
Transconductance.
|
|
81
|
beta
|
Current amplification.
|
|
82
|
gout (1/Ω)
|
Output conductance.
|
|
83
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
84
|
RB (Ω)
|
Base resistance.
|
|
85
|
Cbe (F)
|
Base-emitter capacitance.
|
|
86
|
Cbc (F)
|
Base-collector capacitance.
|
|
87
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
88
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
89
|
XiWepi (M)
|
Thickness of injection layer.
|
|
90
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
91
|
Pdiss (W)
|
Dissipation.
|
|
92
|
pwr (W)
|
Dissipation.
|
|
93
|
TK (K)
|
Actual temperature.
|
|
94
|
jtype
|
Type: +1=npn and -1=pnp.
|
|
95
|
w_estimate (M)
|
|
|
96
|
l_estimate (M
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
BetaDC OP-4
|
Rbv OP-58
|
dvgte M-72
|
nzeb M-18
|
Cb1b2 OP-76
|
SCbe OP-67
|
exavl M-8
|
paramchk M-2
|
Cb1b2x OP-77
|
SIb1 OP-20
|
exmod M-6
|
pc M-43
|
Cb1b2y OP-78
|
SQte OP-34
|
exphi M-7
|
pe M-38
|
Cb1b2z OP-79
|
Sgpi OP-47
|
fT OP-87
|
printscaled I-2
|
Cbc OP-86
|
TK OP-93
|
ftaun M-80
|
pwr OP-92
|
Cbcex OP-74
|
Vb1c1 OP-11
|
gm OP-80
|
rbc M-27
|
Cbcx OP-71
|
Vb1c4 OP-12
|
gmu OP-83
|
rbv M-28
|
Cbcy OP-72
|
Vb2c1 OP-10
|
gmuex OP-54
|
rcbli M-31
|
Cbcz OP-73
|
Vb2c2 OP-9
|
gmux OP-51
|
rcblx M-30
|
Cbe OP-85
|
Vb2c2star OP-90
|
gmuy OP-52
|
rcc M-29
|
Cbex OP-68
|
Vb2e1 OP-8
|
gmuz OP-53
|
rcv M-32
|
Cbey OP-69
|
Vbc OP-6
|
gout OP-82
|
re M-26
|
Cbez OP-70
|
Vbe OP-5
|
gpix OP-48
|
region I-4
|
IRBC OP-28
|
Vc3c4 OP-13
|
gpiy OP-49
|
scrcv M-33
|
IRCBLI OP-31
|
Vc4c1 OP-14
|
gpiz OP-50
|
sfh M-25
|
IRCBLX OP-30
|
Vce OP-7
|
grbvx OP-59
|
taub M-50
|
IRCC OP-29
|
Ve1e OP-15
|
grbvy OP-60
|
taue M-49
|
IRE OP-27
|
XCbcex OP-75
|
grbvz OP-61
|
taur M-52
|
Iavl OP-26
|
XIex OP-25
|
grcvy OP-56
|
tempeff O-1
|
Ib OP-2
|
XQex OP-43
|
grcvz OP-57
|
tepi M-51
|
Ib1 OP-19
|
XQtex OP-41
|
gx OP-44
|
tnom M-85
|
Ib1b2 OP-18
|
Xgmuex OP-55
|
gy OP-45
|
tr M-86
|
Ib2 OP-22
|
XiWepi OP-89
|
gz OP-46
|
tref M-4
|
Ib3 OP-23
|
ab M-58
|
ibf M-14
|
trise I-3
|
Ic OP-1
|
ac M-62
|
ibr M-20
|
tvgeb M-71
|
Ic1c2 OP-17
|
acbl M-63
|
ihc M-34
|
type M-82
|
Ie OP-3
|
ae M-57
|
ik M-10
|
vavl M-24
|
Iex OP-24
|
aepi M-60
|
imax M-83
|
vdc M-42
|
In OP-16
|
aex M-61
|
is M-9
|
vde M-37
|
Iqs OP-88
|
af M-73
|
izeb M-17
|
vef M-12
|
Izteb OP-21
|
aqbo M-56
|
jtype OP-94
|
ver M-11
|
Pdiss OP-91
|
area I-6
|
kavl M-76
|
vexlim M-81
|
Qb1b2 OP-39
|
avgeb M-70
|
kavlver M-77
|
vgb M-66
|
Qbc OP-36
|
axi M-35
|
kc M-78
|
vgc M-67
|
Qbe OP-35
|
beta OP-81
|
ke M-79
|
vgj M-68
|
Qe OP-32
|
bf M-13
|
kf M-74
|
vgzeb M-69
|
Qepi OP-38
|
bri M-19
|
kfn M-75
|
vlr M-21
|
Qex OP-42
|
cbco M-47
|
l_estimate OP-96
|
w_estimate OP-95
|
Qtc OP-37
|
cbeo M-40
|
level M-1
|
wavl M-23
|
Qte OP-33
|
cjc M-41
|
m I-5
|
xcjc M-46
|
Qtex OP-40
|
cje M-36
|
mc M-45
|
xcje M-39
|
RB OP-84
|
compatible M-87
|
meff O-2
|
xext M-22
|
RBC OP-63
|
dais M-59
|
mexlev M-3
|
xibi M-16
|
RCBLI OP-66
|
deg M-53
|
mlf M-15
|
xp M-44
|
RCBLX OP-65
|
dta M-5
|
mtau M-48
|
xqb M-55
|
RCC OP-64
|
dvgbf M-64
|
mult I-1
|
xrec M-54
|
RE OP-62
|
dvgbr M-65
|
mvt0 M-84
|
|
Compact Bipolar-Transistor Model (bjtd504t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd504t parameter=value ...
Model Parameters
|
1
|
level=504
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
Flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
10
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
11
|
ver=2.5 V
|
Reverse Early voltage.
|
|
12
|
vef=44 V
|
Forward Early voltage.
|
|
13
|
bf=215
|
Ideal forward current gain.
|
|
14
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
15
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
16
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
17
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
18
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
19
|
bri=7
|
Ideal reverse current gain.
|
|
20
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
21
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
22
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
23
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
24
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
25
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
26
|
re=5 Ω
|
Emitter resistance.
|
|
27
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
28
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
29
|
rcc=12 Ω
|
Collector contact resistance.
|
|
30
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
31
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
32
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
33
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
34
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
35
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
36
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
37
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
38
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
39
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
40
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
41
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
42
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
43
|
pc=0.5
|
Collector-base grading coefficient.
|
|
44
|
xp=0.35
|
Constant part of Cjc.
|
|
45
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
46
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
47
|
cbco=0
|
Collector-base overlap capacitance.
|
|
48
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
49
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
50
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
51
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
52
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
53
|
deg=0 eV
|
Bandgap difference over the base.
|
|
54
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
55
|
xqb=0.333
|
Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).
|
|
56
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
57
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
58
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
59
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
60
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
61
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
62
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
63
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
64
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
65
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
66
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
67
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
68
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
69
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
70
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
71
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
72
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
73
|
af=2
|
Exponent of the Flicker-noise.
|
|
74
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
75
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
76
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
77
|
kavlver=504
|
Switch for avalanche noise of 504.11 and 504.12.
|
|
78
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
79
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
80
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
81
|
rth=300 K/W
|
Thermal resistance.
|
|
82
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
83
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
84
|
vexlim=400
|
Upper limit of exp() function argument for convergence.
|
|
85
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
86
|
imax=1000 A
|
Explosion current.
|
|
87
|
mvt0=0.0
|
Threshold mismatch intercept.
|
|
88
|
tnom (deg. C)
|
Alias of tnom.
|
|
99
|
tr (deg. C)
|
Alias of tnom.
|
|
90
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
5
|
Vbe (V)
|
External base-emitter bias.
|
|
6
|
Vbc (V)
|
External base-collector bias.
|
|
7
|
Vce (V)
|
External collector-emitter bias.
|
|
8
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
9
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
10
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
11
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
12
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
13
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
14
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
15
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
16
|
In (A)
|
Main current.
|
|
17
|
Ic1c2 (A)
|
Epilayer current.
|
|
18
|
Ib1b2 (A)
|
Pinched-base current.
|
|
19
|
Ib1 (A)
|
Ideal forward base current.
|
|
20
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
21
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
22
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
23
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
24
|
Iex (A)
|
Extrinsic reverse base current.
|
|
25
|
XIex (A)
|
Extrinsic reverse base current.
|
|
26
|
Iavl (A)
|
Avalanche current.
|
|
27
|
IRE (A)
|
Current through emitter resistance.
|
|
28
|
IRBC (A)
|
Current through constant base resistance.
|
|
29
|
IRCC (A)
|
Current through collector contact resistance.
|
|
30
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
31
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
32
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
33
|
Qte (C)
|
Base-emitter depletion charge.
|
|
34
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
35
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
36
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
37
|
Qtc (C)
|
Base-collector depletion charge.
|
|
38
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
39
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
40
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
41
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
42
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
43
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
44
|
gx (1/Ω)
|
Forward transconductance.
|
|
45
|
gy (1/Ω)
|
Reverse transconductance.
|
|
46
|
gz (1/Ω)
|
Reverse transconductance.
|
|
47
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
48
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
49
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
50
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
51
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
52
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
53
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
54
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
55
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
56
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
57
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
58
|
Rbv (Ω)
|
Base resistance.
|
|
59
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
60
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
61
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
62
|
RE (Ω)
|
Emitter resistance.
|
|
63
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
64
|
RCC (Ω)
|
Collector contact resistance.
|
|
65
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
66
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
67
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
68
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
69
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
70
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
71
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
72
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
73
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
74
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
75
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
76
|
Cb1b2 (F)
|
Capacitance AC current crowding.
|
|
77
|
Cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
78
|
Cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
79
|
Cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
80
|
gm (1/Ω)
|
Transconductance.
|
|
81
|
beta
|
Current amplification.
|
|
82
|
gout (1/Ω)
|
Output conductance.
|
|
83
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
84
|
RB (Ω)
|
Base resistance.
|
|
85
|
Cbe (F)
|
Base-emitter capacitance.
|
|
86
|
Cbc (F)
|
Base-collector capacitance.
|
|
87
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
88
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
89
|
XiWepi (M)
|
Thickness of injection layer.
|
|
90
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
91
|
Pdiss (W)
|
Dissipation.
|
|
92
|
pwr (W)
|
Dissipation.
|
|
93
|
TK (K)
|
Actual temperature.
|
|
94
|
jtype
|
Type: +1=npn and -1=pnp.
|
|
95
|
w_estimate (M)
|
|
|
96
|
l_estimate (M)
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
BetaDC OP-4
|
SCbe OP-67
|
dvgte M-72
|
paramchk M-2
|
Cb1b2 OP-76
|
SIb1 OP-20
|
exavl M-8
|
pc M-43
|
Cb1b2x OP-77
|
SQte OP-34
|
exmod M-6
|
pe M-38
|
Cb1b2y OP-78
|
Sgpi OP-47
|
exphi M-7
|
printscaled I-2
|
Cb1b2z OP-79
|
TK OP-93
|
fT OP-87
|
pwr OP-92
|
Cbc OP-86
|
Vb1c1 OP-11
|
ftaun M-80
|
rbc M-27
|
Cbcex OP-74
|
Vb1c4 OP-12
|
gm OP-80
|
rbv M-28
|
Cbcx OP-71
|
Vb2c1 OP-10
|
gmu OP-83
|
rcbli M-31
|
Cbcy OP-72
|
Vb2c2 OP-9
|
gmuex OP-54
|
rcblx M-30
|
Cbcz OP-73
|
Vb2c2star OP-90
|
gmux OP-51
|
rcc M-29
|
Cbe OP-85
|
Vb2e1 OP-8
|
gmuy OP-52
|
rcv M-32
|
Cbex OP-68
|
Vbc OP-6
|
gmuz OP-53
|
re M-26
|
Cbey OP-69
|
Vbe OP-5
|
gout OP-82
|
region I-4
|
Cbez OP-70
|
Vc3c4 OP-13
|
gpix OP-48
|
rth M-81
|
IRBC OP-28
|
Vc4c1 OP-14
|
gpiy OP-49
|
scrcv M-33
|
IRCBLI OP-31
|
Vce OP-7
|
gpiz OP-50
|
sfh M-25
|
IRCBLX OP-30
|
Ve1e OP-15
|
grbvx OP-59
|
taub M-50
|
IRCC OP-29
|
XCbcex OP-75
|
grbvy OP-60
|
taue M-49
|
IRE OP-27
|
XIex OP-25
|
grbvz OP-61
|
taur M-52
|
Iavl OP-26
|
XQex OP-43
|
grcvy OP-56
|
tempeff O-1
|
Ib OP-2
|
XQtex OP-41
|
grcvz OP-57
|
tepi M-51
|
Ib1 OP-19
|
Xgmuex OP-55
|
gx OP-44
|
tnom M-88
|
Ib1b2 OP-18
|
XiWepi OP-89
|
gy OP-45
|
tr M-89
|
Ib2 OP-22
|
ab M-58
|
gz OP-46
|
tref M-4
|
Ib3 OP-23
|
ac M-62
|
ibf M-14
|
trise I-3
|
Ic OP-1
|
acbl M-63
|
ibr M-20
|
tvgeb M-71
|
Ic1c2 OP-17
|
ae M-57
|
ihc M-34
|
type M-85
|
Ie OP-3
|
aepi M-60
|
ik M-10
|
vavl M-24
|
Iex OP-24
|
aex M-61
|
imax M-86
|
vdc M-42
|
In OP-16
|
af M-73
|
is M-9
|
vde M-37
|
Iqs OP-88
|
aqbo M-56
|
izeb M-17
|
vef M-12
|
Izteb OP-21
|
area I-6
|
jtype OP-94
|
ver M-11
|
Pdiss OP-91
|
ath M-83
|
kavl M-76
|
vexlim M-84
|
Qb1b2 OP-39
|
avgeb M-70
|
kavlver M-77
|
vgb M-66
|
Qbc OP-36
|
axi M-35
|
kc M-78
|
vgc M-67
|
Qbe OP-35
|
beta OP-81
|
ke M-79
|
vgj M-68
|
Qe OP-32
|
bf M-13
|
kf M-74
|
vgzeb M-69
|
Qepi OP-38
|
bri M-19
|
kfn M-75
|
vlr M-21
|
Qex OP-42
|
cbco M-47
|
l_estimate OP-96
|
w_estimate OP-95
|
Qtc OP-37
|
cbeo M-40
|
level M-1
|
wavl M-23
|
Qte OP-33
|
cjc M-41
|
m I-5
|
xcjc M-46
|
Qtex OP-40
|
cje M-36
|
mc M-45
|
xcje M-39
|
RB OP-84
|
compatible M-90
|
meff O-2
|
xext M-22
|
RBC OP-63
|
cth M-82
|
mexlev M-3
|
xibi M-16
|
RCBLI OP-66
|
dais M-59
|
mlf M-15
|
xp M-44
|
RCBLX OP-65
|
deg M-53
|
mtau M-48
|
xqb M-55
|
RCC OP-64
|
dta M-5
|
mult I-1
|
xrec M-54
|
RE OP-62
|
dvgbf M-64
|
mvt0 M-87
|
|
Rbv OP-58
|
dvgbr M-65
|
nzeb M-18
|
|
Compact Bipolar-Transistor Model (bjtd505)
Description
This is SiMKit 5.0
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e ModelName parameter=value ...
Instance Parameters
|
1
|
dta=0 degC
|
Difference between the local and global ambient temperatures.
|
|
2
|
mult=1
|
Multiplication factor.
|
|
3
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
4
|
trise=0
|
Difference between the local ambient and global ambient temperature.
|
|
5
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
6
|
m=1
|
Alias of mult.
|
|
7
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd505 parameter=value ...
Model Parameters
|
1
|
level=505
|
Model level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
version=505
|
Model version.
|
|
4
|
type=npn
|
Flag for NPN (1) or PNP (-1) transistor type. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
5
|
tref=25 degC
|
Reference temperature.
|
|
6
|
exmod=1
|
Flag for extended modeling of the reverse current gain.
|
|
7
|
exphi=1
|
Flag for distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modeling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Saturation current of main current.
|
|
10
|
nff=1
|
Non-ideality factor of forward main current.
|
|
11
|
nfr=1
|
Non-ideality factor of reverse main current.
|
|
12
|
ik=0.1 A
|
CE high injection knee current.
|
|
13
|
ver=2.5 V
|
Reverse Early voltage.
|
|
14
|
vef=44 V
|
Forward Early voltage.
|
|
15
|
ibi=1e-19 A
|
Saturation current of ideal base current.
|
|
16
|
nbi=1
|
Non-ideality factor of ideal base current.
|
|
17
|
ibis=0 A
|
Saturation current of ideal side wall base current.
|
|
18
|
nbis=1
|
Non-ideality factor of ideal side wall base current.
|
|
19
|
ibf=2.7e-15 A
|
Saturation current of non-ideal forward base current.
|
|
20
|
mlf=2
|
Non-ideality factor of non-ideal forward base current.
|
|
21
|
ibfs=0 A
|
Saturation current of non-ideal side wall forward base current.
|
|
22
|
mlfs=2
|
Non-ideality factor of non-ideal side wall forward base current.
|
|
23
|
ibx=3.14e-18 A
|
Saturation current of extrinsic reverse base current.
|
|
24
|
ikbx=0.0143 A
|
Extrinsic CB high injection knee current.
|
|
25
|
ibr=1e-15 A
|
Saturation current of non-ideal reverse base current.
|
|
26
|
mlr=2
|
Non-ideality factor of non-ideal reverse base current.
|
|
27
|
xext=0.63
|
Part of currents and charges that belong to extrinsic region.
|
|
28
|
izeb=0 A
|
Pre-factor of EB Zener tunneling current.
|
|
29
|
nzeb=22
|
Coefficient of EB Zener tunneling current.
|
|
30
|
izcb=0 A
|
Pre-factor of CB Zener tunneling current.
|
|
31
|
nzcb=22
|
Coefficient of CB Zener tunneling current.
|
|
32
|
swavl=1
|
Switch of avalanche factor Gem model.
|
|
33
|
aavl=400
|
aavl of swavl=1 Gem model.
|
|
34
|
cavl=-0.37
|
cavl of swavl=1 Gem model.
|
|
35
|
itoavl=0.5 A
|
Current dependence parameter of swavl=1 Gem model.
|
|
36
|
bavl=25
|
bavl of swavl=1 Gem model.
|
|
37
|
vdcavl=0.1 V
|
CB diffusion voltage dedicated for swavl=1 Gem model.
|
|
38
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
39
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
40
|
sfh=0.3
|
Current spreading factor of avalanche model when exavl=1.
|
|
41
|
re=5 Ω
|
Emitter resistance.
|
|
42
|
rbc=23 Ω
|
Constant part of base resistance.
|
|
43
|
rbv=18 Ω
|
Zero-bias value of variable part of the base resistance.
|
|
44
|
rcc=12 Ω
|
Constant part of collector resistance.
|
|
45
|
rcblx=0 Ω
|
Resistance Collector Buried Layer extrinsic.
|
|
46
|
rcbli=0 Ω
|
Resistance Collector Buried Layer Intrinsic.
|
|
47
|
rcv=150 Ω
|
Resistance of un-modulated epilayer.
|
|
48
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of epilayer.
|
|
49
|
ihc=0.004 A
|
Critical current for velocity saturation in epilayer.
|
|
50
|
axi=0.3
|
Smoothness parameter for onset of quasi-saturation.
|
|
51
|
vdc=0.68 V
|
CB diffusion voltage.
|
|
52
|
cje=7.3e-14 F
|
Zero-bias EB depletion capacitance.
|
|
53
|
vde=0.95 V
|
EB diffusion voltage.
|
|
54
|
pe=0.4
|
EB grading coefficient.
|
|
55
|
xcje=0.4
|
Sidewall fraction of EB depletion capacitance.
|
|
56
|
cbeo=0 F
|
EB overlap capacitance.
|
|
57
|
cjc=7.8e-14 F
|
Zero-bias CB depletion capacitance.
|
|
58
|
vdcctc=0.68 V
|
CB diffusion voltage of depletion capacitance.
|
|
59
|
pc=0.5
|
CB grading coefficient.
|
|
60
|
swvchc=0
|
Switch of Vch for CB depletion capacitance.
|
|
61
|
swvjunc=0
|
Switch of Vjunc for collector junction capacitance.
|
|
62
|
xp=0.35
|
Constant part of Cjc.
|
|
63
|
mc=0.5
|
Coefficient for current modulation of CB depletion capacitance.
|
|
64
|
xcjc=0.032
|
Fraction of CB depletion capacitance under the emitter.
|
|
65
|
cbco=0 F
|
CB overlap capacitance.
|
|
66
|
mtau=1
|
Non-ideality factor of emitter stored charge.
|
|
67
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
68
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
69
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
70
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic stored base charge.
|
|
71
|
deg=0 eV
|
Bandgap difference over the base.
|
|
72
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
73
|
xqb=0.333
|
Emitter-fraction of base diffusion charge.
|
|
74
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
75
|
aqbo=0.3
|
Temperature coefficient of zero-bias base charge.
|
|
76
|
ae=0
|
Temperature coefficient of resistivity of the emitter.
|
|
77
|
ab=1
|
Temperature coefficient of resistivity of the base.
|
|
78
|
aepi=2.5
|
Temperature coefficient of resistivity of the epilayer.
|
|
79
|
aex=0.62
|
Temperature coefficient of resistivity of the extrinsic base.
|
|
80
|
ac=2
|
Temperature coefficient of resistivity of the collector contact.
|
|
81
|
acx=1.3
|
Temperature coefficient of extrinsic reverse base current.
|
|
82
|
acbl=2
|
Temperature coefficient of resistivity of the collector buried layer.
|
|
83
|
vgb=1.17 V
|
Band-gap voltage of base.
|
|
84
|
vgc=1.18 V
|
Band-gap voltage of collector.
|
|
85
|
vge=1.12 V
|
Band-gap voltage of emitter.
|
|
86
|
vgcx=1.12 V
|
Band-gap voltage of extrinsic collector.
|
|
87
|
vgj=1.15 V
|
Band-gap voltage recombination EB junction.
|
|
88
|
vgzeb=1.15 V
|
Band-gap voltage at Tref for EB tunneling.
|
|
89
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
90
|
tvgeb=636 K
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
91
|
vgzcb=1.15 V
|
Band-gap voltage at Tref for CB tunneling.
|
|
92
|
avgcb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
93
|
tvgcb=636 K
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
94
|
dvgte=0.05 V
|
Band-gap voltage difference of emitter stored charge.
|
|
95
|
dais=0
|
Fine tuning of temperature dependence of CE saturation current.
|
|
96
|
tnff=0 /K
|
Temperature coefficient of nff.
|
|
97
|
tnfr=0 /K
|
Temperature coefficient of nfr.
|
|
98
|
tbavl=0.0005
|
Temperature scaling parameter of bavl when swavl=1.
|
|
99
|
af=2
|
Exponent of Flicker-noise of ideal base current.
|
|
100
|
afn=2
|
Exponent of Flicker-noise of non-ideal base current.
|
|
101
|
kf=2e-11
|
Flicker-noise coefficient of ideal base current.
|
|
102
|
kfn=2e-11
|
Flicker-noise coefficient of non-ideal base current.
|
|
103
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
104
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
105
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
106
|
isibrel=0 A
|
Saturation current of base current for reliability simulation.
|
|
107
|
nfibrel=2
|
Non-ideality factor of base current for reliability simulation.
|
|
108
|
gmin=1e-13
|
Minimum conductance.
|
|
109
|
imax=1000 A
|
Explosion current.
|
|
110
|
tnom (degC)
|
Parameters measurement temperature.
|
|
111
|
tr (degC)
|
Alias of tnom.
|
|
112
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
jtype
|
type: +1=npn and -1=pnp.
|
|
2
|
r_e (Ω)
|
Emitter resistance.
|
|
3
|
rb_c (Ω)
|
Constant base resistance.
|
|
4
|
rc_c (Ω)
|
Collector contact resistance.
|
|
5
|
rc_blx (Ω)
|
Extrinsic buried layer resistance.
|
|
6
|
rc_bli (Ω)
|
Intrinsic buried layer resistance.
|
|
7
|
rc (Ω)
|
Collector resistance.
|
|
8
|
tk (K)
|
Actual temperature.
|
|
9
|
ic (A)
|
External DC collector current.
|
|
10
|
ib (A)
|
External DC base current.
|
|
11
|
betadc
|
External DC current gain Ic/Ib.
|
|
12
|
ie (A)
|
External DC emitter current.
|
|
13
|
vbe (V)
|
External base-emitter bias.
|
|
14
|
vce (V)
|
External collector-emitter bias.
|
|
15
|
vbc (V)
|
External base-collector bias.
|
|
16
|
vb2e1 (V)
|
Internal base-emitter bias.
|
|
17
|
vb2c2 (V)
|
Internal base-collector bias.
|
|
18
|
vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
19
|
vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
20
|
vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
21
|
vc3c4 (V)
|
Bias over extrinsic buried layer.
|
|
22
|
ve1e (V)
|
Bias over emitter resistance.
|
|
23
|
in (A)
|
Main current.
|
|
24
|
ic1c2 (A)
|
Epilayer current.
|
|
25
|
ib1b2 (A)
|
Pinched-base current.
|
|
26
|
ib1 (A)
|
Ideal forward base current.
|
|
27
|
ib1s (A)
|
Ideal side-wall base current.
|
|
28
|
ib2s (A)
|
Non-ideal side-wall base current.
|
|
29
|
ibrel (A)
|
Additional non-ideal base current for reliability simulation.
|
|
30
|
izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
31
|
iztcb (A)
|
Zener tunneling current in the collector base junction.
|
|
32
|
ib2 (A)
|
Non-ideal forward base current.
|
|
33
|
ib3 (A)
|
Non-ideal reverse base current.
|
|
34
|
iavl (A)
|
Avalanche current.
|
|
35
|
iex (A)
|
Extrinsic reverse base current.
|
|
36
|
xiex (A)
|
Extrinsic reverse base current.
|
|
37
|
ire (A)
|
Current through emitter resistance.
|
|
38
|
irbc (A)
|
Current through constant base resistance.
|
|
39
|
ircblx (A)
|
Current through extrinsic buried layer resistance.
|
|
40
|
ircbli (A)
|
Current through intrinsic buried layer resistance.
|
|
41
|
ircc (A)
|
Current through collector contact resistance.
|
|
42
|
qe (coul)
|
Emitter charge or emitter neutral charge.
|
|
43
|
qte (coul)
|
Base-emitter depletion charge.
|
|
44
|
sqte (coul)
|
Sidewall base-emitter depletion charge.
|
|
45
|
qbe (coul)
|
Base-emitter diffusion charge.
|
|
46
|
qbc (coul)
|
Base_collector diffusion charge.
|
|
47
|
qtc (coul)
|
Base-collector depletion charge.
|
|
48
|
qepi (coul)
|
Epilayer diffusion charge.
|
|
49
|
qb1b2 (coul)
|
ac current crowding charge.
|
|
50
|
qtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
51
|
xqtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
52
|
qex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
53
|
xqex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
54
|
gx (S)
|
Forward transconductance.
|
|
55
|
gy (S)
|
Reverse transconductance.
|
|
56
|
gz (S)
|
Reverse transconductance.
|
|
57
|
sgpi (S)
|
Conductance sidewall b-e junction.
|
|
58
|
gpix (S)
|
Conductance floor b-e junction.
|
|
59
|
gpiy (S)
|
Early effect on recombination base current.
|
|
60
|
gpiz (S)
|
Early effect on recombination base current.
|
|
61
|
gmux (S)
|
Early effect on avalanche current limiting.
|
|
62
|
gmuy (S)
|
Conductance of avalanche current.
|
|
63
|
gmuz (S)
|
Conductance of avalanche current.
|
|
64
|
gmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
65
|
xgmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
66
|
grcvy (S)
|
Conductance of epilayer current.
|
|
67
|
grcvz (S)
|
Conductance of epilayer current.
|
|
68
|
rb_v (Ω)
|
Variable base resistance.
|
|
69
|
grbvx (S)
|
Early effect on variable base resistance.
|
|
70
|
grbvy (S)
|
Early effect on variable base resistance.
|
|
71
|
grbvz (S)
|
Early effect on variable base resistance.
|
|
72
|
scbe (F)
|
Capacitance sidewall b-e junction.
|
|
73
|
cbex (F)
|
Capacitance floor b-e junction.
|
|
74
|
cbey (F)
|
Early effect on b-e diffusion charge.
|
|
75
|
cbez (F)
|
Early effect on b-e diffusion charge.
|
|
76
|
cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
77
|
cbcy (F)
|
Capacitance floor b-c junction.
|
|
78
|
cbcz (F)
|
Capacitance floor b-c junction.
|
|
79
|
cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
80
|
xcbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
81
|
cb1b2 (F)
|
Capacitance AC current crowding.
|
|
82
|
cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
83
|
cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
84
|
cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
85
|
gm (S)
|
transconductance.
|
|
86
|
beta
|
Current amplification.
|
|
87
|
gout (S)
|
Output conductance.
|
|
88
|
gmu (S)
|
Feedback transconductance.
|
|
89
|
rb (Ω)
|
Base resistance.
|
|
90
|
cbe (F)
|
Base-emitter capacitance.
|
|
91
|
cbc (F)
|
Base-collector capacitance.
|
|
92
|
ft (Hz)
|
Good approximation for cut-off frequency.
|
|
93
|
iqs (A)
|
Current at onset of quasi-saturation.
|
|
94
|
xiwepi
|
Thickness of injection layer normalized to epi layer width.
|
|
95
|
vb2c2star (V)
|
Physical value of internal base-collector bias.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.
|
aavl M-33
|
gpix OP-58
|
level M-1
|
taue M-67
|
|
ab M-77
|
gpiy OP-59
|
m I-6
|
taur M-70
|
|
ac M-80
|
gpiz OP-60
|
mc M-63
|
tbavl M-98
|
|
acbl M-82
|
grbvx OP-69
|
meff O-2
|
tempeff O-1
|
|
acx M-81
|
grbvy OP-70
|
mlf M-20
|
tepi M-69
|
|
ae M-76
|
grbvz OP-71
|
mlfs M-22
|
tk OP-8
|
|
aepi M-78
|
grcvy OP-66
|
mlr M-26
|
tnff M-96
|
|
aex M-79
|
grcvz OP-67
|
mtau M-66
|
tnfr M-97
|
|
af M-99
|
gx OP-54
|
mult I-2
|
tnom M-110
|
|
afn M-100
|
gy OP-55
|
nbi M-16
|
tr M-111
|
|
aqbo M-75
|
gz OP-56
|
nbis M-18
|
tref M-5
|
|
area I-7
|
iavl OP-34
|
nff M-10
|
trise I-4
|
|
avgcb M-92
|
ib OP-10
|
nfibrel M-107
|
tvgcb M-93
|
|
avgeb M-89
|
ib1 OP-26
|
nfr M-11
|
tvgeb M-90
|
|
axi M-50
|
ib1b2 OP-25
|
nzcb M-31
|
type M-4
|
|
bavl M-36
|
ib1s OP-27
|
nzeb M-29
|
vavl M-39
|
|
beta OP-86
|
ib2 OP-32
|
paramchk M-2
|
vb1c1 OP-19
|
|
betadc OP-11
|
ib2s OP-28
|
pc M-59
|
vb2c1 OP-18
|
|
cavl M-34
|
ib3 OP-33
|
pe M-54
|
vb2c2 OP-17
|
|
cb1b2 OP-81
|
ibf M-19
|
printscaled I-3
|
vb2c2star OP-95
|
|
cb1b2x OP-82
|
ibfs M-21
|
qb1b2 OP-49
|
vb2e1 OP-16
|
|
cb1b2y OP-83
|
ibi M-15
|
qbc OP-46
|
vbc OP-15
|
|
cb1b2z OP-84
|
ibis M-17
|
qbe OP-45
|
vbe OP-13
|
|
cbc OP-91
|
ibr M-25
|
qe OP-42
|
vc3c4 OP-21
|
|
cbcex OP-79
|
ibrel OP-29
|
qepi OP-48
|
vc4c1 OP-20
|
|
cbco M-65
|
ibx M-23
|
qex OP-52
|
vce OP-14
|
|
cbcx OP-76
|
ic OP-9
|
qtc OP-47
|
vdc M-51
|
|
cbcy OP-77
|
ic1c2 OP-24
|
qte OP-43
|
vdcavl M-37
|
|
cbcz OP-78
|
ie OP-12
|
qtex OP-50
|
vdcctc M-58
|
|
cbe OP-90
|
iex OP-35
|
r_e OP-2
|
vde M-53
|
|
cbeo M-56
|
ihc M-49
|
rb OP-89
|
ve1e OP-22
|
|
cbex OP-73
|
ik M-12
|
rb_c OP-3
|
vef M-14
|
|
cbey OP-74
|
ikbx M-24
|
rb_v OP-68
|
ver M-13
|
|
cbez OP-75
|
imax M-109
|
rbc M-42
|
version M-3
|
|
cjc M-57
|
in OP-23
|
rbv M-43
|
vgb M-83
|
|
cje M-52
|
iqs OP-93
|
rc OP-7
|
vgc M-84
|
|
compatible M-112
|
irbc OP-38
|
rc_bli OP-6
|
vgcx M-86
|
|
dais M-95
|
ircbli OP-40
|
rc_blx OP-5
|
vge M-85
|
|
deg M-71
|
ircblx OP-39
|
rc_c OP-4
|
vgj M-87
|
|
dta I-1
|
ircc OP-41
|
rcbli M-46
|
vgzcb M-91
|
|
dvgte M-94
|
ire OP-37
|
rcblx M-45
|
vgzeb M-88
|
|
exavl M-8
|
is M-9
|
rcc M-44
|
wavl M-38
|
|
exmod M-6
|
isibrel M-106
|
rcv M-47
|
xcbcex OP-80
|
|
exphi M-7
|
itoavl M-35
|
re M-41
|
xcjc M-64
|
|
ft OP-92
|
izcb M-30
|
region I-5
|
xcje M-55
|
|
ftaun M-105
|
izeb M-28
|
scbe OP-72
|
xext M-27
|
|
gm OP-85
|
iztcb OP-31
|
scrcv M-48
|
xgmuex OP-65
|
|
gmin M-108
|
izteb OP-30
|
sfh M-40
|
xiex OP-36
|
|
gmu OP-88
|
jtype OP-1
|
sgpi OP-57
|
xiwepi OP-94
|
|
gmuex OP-64
|
kavl M-103
|
sqte OP-44
|
xp M-62
|
|
gmux OP-61
|
kc M-104
|
swavl M-32
|
xqb M-73
|
|
gmuy OP-62
|
ke M-74
|
swvchc M-60
|
xqex OP-53
|
|
gmuz OP-63
|
kf M-101
|
swvjunc M-61
|
xqtex OP-51
|
|
gout OP-87
|
kfn M-102
|
taub M-68
|
xrec M-72
|
Compact Bipolar-Transistor Model (bjtd505t)
Description
This is SiMKit 5.0
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e dt ModelName parameter=value ...
Instance Parameters
|
1
|
dta=0 degC
|
Difference between the local and global ambient temperatures.
|
|
2
|
mult=1
|
Multiplication factor.
|
|
3
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
4
|
trise=0
|
Difference between the local ambient and global ambient temperature.
|
|
5
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
6
|
m=1
|
Alias of mult.
|
|
7
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd505t parameter=value ...
Model Parame
ters
|
1
|
level=505
|
Model level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
version=505
|
Model version.
|
|
4
|
type=npn
|
Flag for NPN (1) or PNP (-1) transistor type. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
5
|
tref=25 degC
|
Reference temperature.
|
|
6
|
exmod=1
|
Flag for extended modeling of the reverse current gain.
|
|
7
|
exphi=1
|
Flag for distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modeling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Saturation current of main current.
|
|
10
|
nff=1
|
Non-ideality factor of forward main current.
|
|
11
|
nfr=1
|
Non-ideality factor of reverse main current.
|
|
12
|
ik=0.1 A
|
CE high injection knee current.
|
|
13
|
ver=2.5 V
|
Reverse Early voltage.
|
|
14
|
vef=44 V
|
Forward Early voltage.
|
|
15
|
ibi=1e-19 A
|
Saturation current of ideal base current.
|
|
16
|
nbi=1
|
Non-ideality factor of ideal base current.
|
|
17
|
ibis=0 A
|
Saturation current of ideal side wall base current.
|
|
18
|
nbis=1
|
Non-ideality factor of ideal side wall base current.
|
|
19
|
ibf=2.7e-15 A
|
Saturation current of non-ideal forward base current.
|
|
20
|
mlf=2
|
Non-ideality factor of non-ideal forward base current.
|
|
21
|
ibfs=0 A
|
Saturation current of non-ideal side wall forward base current.
|
|
22
|
mlfs=2
|
Non-ideality factor of non-ideal side wall forward base current.
|
|
23
|
ibx=3.14e-18 A
|
Saturation current of extrinsic reverse base current.
|
|
24
|
ikbx=0.0143 A
|
Extrinsic CB high injection knee current.
|
|
25
|
ibr=1e-15 A
|
Saturation current of non-ideal reverse base current.
|
|
26
|
mlr=2
|
Non-ideality factor of non-ideal reverse base current.
|
|
27
|
xext=0.63
|
Part of currents and charges that belong to extrinsic region.
|
|
28
|
izeb=0 A
|
Pre-factor of EB Zener tunneling current.
|
|
29
|
nzeb=22
|
Coefficient of EB Zener tunneling current.
|
|
30
|
izcb=0 A
|
Pre-factor of CB Zener tunneling current.
|
|
31
|
nzcb=22
|
Coefficient of CB Zener tunneling current.
|
|
32
|
swavl=1
|
Switch of avalanche factor Gem model.
|
|
33
|
aavl=400
|
aavl of swavl=1 Gem model.
|
|
34
|
cavl=-0.37
|
cavl of swavl=1 Gem model.
|
|
35
|
itoavl=0.5 A
|
Current dependence parameter of swavl=1 Gem model.
|
|
36
|
bavl=25
|
bavl of swavl=1 Gem model.
|
|
37
|
vdcavl=0.1 V
|
CB diffusion voltage dedicated for swavl=1 Gem model.
|
|
38
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
39
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
40
|
sfh=0.3
|
Current spreading factor of avalanche model when exavl=1.
|
|
41
|
re=5 Ω
|
Emitter resistance.
|
|
42
|
rbc=23 Ω
|
Constant part of base resistance.
|
|
43
|
rbv=18 Ω
|
Zero-bias value of variable part of the base resistance.
|
|
44
|
rcc=12 Ω
|
Constant part of collector resistance.
|
|
45
|
rcblx=0 Ω
|
Resistance Collector Buried Layer extrinsic.
|
|
46
|
rcbli=0 Ω
|
Resistance Collector Buried Layer Intrinsic.
|
|
47
|
rcv=150 Ω
|
Resistance of un-modulated epilayer.
|
|
48
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of epilayer.
|
|
49
|
ihc=0.004 A
|
Critical current for velocity saturation in epilayer.
|
|
50
|
axi=0.3
|
Smoothness parameter for onset of quasi-saturation.
|
|
51
|
vdc=0.68 V
|
CB diffusion voltage.
|
|
52
|
cje=7.3e-14 F
|
Zero-bias EB depletion capacitance.
|
|
53
|
vde=0.95 V
|
EB diffusion voltage.
|
|
54
|
pe=0.4
|
EB grading coefficient.
|
|
55
|
xcje=0.4
|
Sidewall fraction of EB depletion capacitance.
|
|
56
|
cbeo=0 F
|
EB overlap capacitance.
|
|
57
|
cjc=7.8e-14 F
|
Zero-bias CB depletion capacitance.
|
|
58
|
vdcctc=0.68 V
|
CB diffusion voltage of depletion capacitance.
|
|
59
|
pc=0.5
|
CB grading coefficient.
|
|
60
|
swvchc=0
|
Switch of Vch for CB depletion capacitance.
|
|
61
|
swvjunc=0
|
Switch of Vjunc for collector junction capacitance.
|
|
62
|
xp=0.35
|
Constant part of Cjc.
|
|
63
|
mc=0.5
|
Coefficient for current modulation of CB depletion capacitance.
|
|
64
|
xcjc=0.032
|
Fraction of CB depletion capacitance under the emitter.
|
|
65
|
cbco=0 F
|
CB overlap capacitance.
|
|
66
|
mtau=1
|
Non-ideality factor of emitter stored charge.
|
|
67
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
68
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
69
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
70
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic stored base charge.
|
|
71
|
deg=0 eV
|
Bandgap difference over the base.
|
|
72
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
73
|
xqb=0.333
|
Emitter-fraction of base diffusion charge.
|
|
74
|
ke=0
|
Fraction of QE in excess phase shift.
|
|
75
|
aqbo=0.3
|
Temperature coefficient of zero-bias base charge.
|
|
76
|
ae=0
|
Temperature coefficient of resistivity of the emitter.
|
|
77
|
ab=1
|
Temperature coefficient of resistivity of the base.
|
|
78
|
aepi=2.5
|
Temperature coefficient of resistivity of the epilayer.
|
|
79
|
aex=0.62
|
Temperature coefficient of resistivity of the extrinsic base.
|
|
80
|
ac=2
|
Temperature coefficient of resistivity of the collector contact.
|
|
81
|
acx=1.3
|
Temperature coefficient of extrinsic reverse base current.
|
|
82
|
acbl=2
|
Temperature coefficient of resistivity of the collector buried layer.
|
|
83
|
vgb=1.17 V
|
Band-gap voltage of base.
|
|
84
|
vgc=1.18 V
|
Band-gap voltage of collector.
|
|
85
|
vge=1.12 V
|
Band-gap voltage of emitter.
|
|
86
|
vgcx=1.12 V
|
Band-gap voltage of extrinsic collector.
|
|
87
|
vgj=1.15 V
|
Band-gap voltage recombination EB junction.
|
|
88
|
vgzeb=1.15 V
|
Band-gap voltage at Tref for EB tunneling.
|
|
89
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
90
|
tvgeb=636 K
|
Temperature coefficient of band-gap voltage for EB tunneling.
|
|
91
|
vgzcb=1.15 V
|
Band-gap voltage at Tref for CB tunneling.
|
|
92
|
avgcb=0.000473 V/K
|
|
|
|
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
93
|
tvgcb=636 K
|
Temperature coefficient of band-gap voltage for CB tunneling.
|
|
94
|
dvgte=0.05 V
|
Band-gap voltage difference of emitter stored charge.
|
|
95
|
dais=0
|
Fine tuning of temperature dependence of CE saturation current.
|
|
96
|
tnff=0 /K
|
Temperature coefficient of nff.
|
|
97
|
tnfr=0 /K
|
Temperature coefficient of nfr.
|
|
98
|
tbavl=0.0005
|
Temperature scaling parameter of bavl when swavl=1.
|
|
99
|
af=2
|
Exponent of Flicker-noise of ideal base current.
|
|
100
|
afn=2
|
Exponent of Flicker-noise of non-ideal base current.
|
|
101
|
kf=2e-11
|
Flicker-noise coefficient of ideal base current.
|
|
102
|
kfn=2e-11
|
Flicker-noise coefficient of non-ideal base current.
|
|
103
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
104
|
kc=0
|
Switch for RF correlation noise model selection.
|
|
105
|
ftaun=0
|
Fraction of noise transit time to total transit time.
|
|
106
|
rth=300 K/W
|
Thermal resistance.
|
|
107
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
108
|
ath=0
|
Temperature coefficient of thermal resistance.
|
|
109
|
isibrel=0 A
|
Saturation current of base current for reliability simulation.
|
|
110
|
nfibrel=2
|
Non-ideality factor of base current for reliability simulation.
|
|
111
|
gmin=1e-13
|
Minimum conductance.
|
|
112
|
imax=1000 A
|
Explosion current.
|
|
113
|
tnom (degC)
|
Parameters measurement temperature.
|
|
114
|
tr (degC)
|
Alias of tnom.
|
|
115
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
jtype
|
type: +1=npn and -1=pnp.
|
|
2
|
ic (A)
|
External DC collector current.
|
|
3
|
ib (A)
|
External DC base current.
|
|
4
|
betadc
|
External DC current gain Ic/Ib.
|
|
5
|
ie (A)
|
External DC emitter current.
|
|
6
|
vbe (V)
|
External base-emitter bias.
|
|
7
|
vce (V)
|
External collector-emitter bias.
|
|
8
|
vbc (V)
|
External base-collector bias.
|
|
9
|
vb2e1 (V)
|
Internal base-emitter bias.
|
|
10
|
vb2c2 (V)
|
Internal base-collector bias.
|
|
11
|
vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
12
|
vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
13
|
vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
14
|
vc3c4 (V)
|
Bias over extrinsic buried layer.
|
|
15
|
ve1e (V)
|
Bias over emitter resistance.
|
|
16
|
in (A)
|
Main current.
|
|
17
|
ic1c2 (A)
|
Epilayer current.
|
|
18
|
ib1b2 (A)
|
Pinched-base current.
|
|
19
|
ib1 (A)
|
Ideal forward base current.
|
|
20
|
ib1s (A)
|
Ideal side-wall base current.
|
|
21
|
ib2s (A)
|
Non-ideal side-wall base current.
|
|
22
|
ibrel (A)
|
Additional non-ideal base current for reliability simulation.
|
|
23
|
izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
24
|
iztcb (A)
|
Zener tunneling current in the collector base junction.
|
|
25
|
ib2 (A)
|
Non-ideal forward base current.
|
|
26
|
ib3 (A)
|
Non-ideal reverse base current.
|
|
27
|
iavl (A)
|
Avalanche current.
|
|
28
|
iex (A)
|
Extrinsic reverse base current.
|
|
29
|
xiex (A)
|
Extrinsic reverse base current.
|
|
30
|
ire (A)
|
Current through emitter resistance.
|
|
31
|
irbc (A)
|
Current through constant base resistance.
|
|
32
|
ircblx (A)
|
Current through extrinsic buried layer resistance.
|
|
33
|
ircbli (A)
|
Current through intrinsic buried layer resistance.
|
|
34
|
ircc (A)
|
Current through collector contact resistance.
|
|
35
|
qe (coul)
|
Emitter charge or emitter neutral charge.
|
|
36
|
qte (coul)
|
Base-emitter depletion charge.
|
|
37
|
sqte (coul)
|
Sidewall base-emitter depletion charge.
|
|
38
|
qbe (coul)
|
Base-emitter diffusion charge.
|
|
39
|
qbc (coul)
|
Base_collector diffusion charge.
|
|
40
|
qtc (coul)
|
Base-collector depletion charge.
|
|
41
|
qepi (coul)
|
Epilayer diffusion charge.
|
|
42
|
qb1b2 (coul)
|
ac current crowding charge.
|
|
43
|
qtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
44
|
xqtex (coul)
|
Extrinsic base-collector depletion charge.
|
|
45
|
qex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
46
|
xqex (coul)
|
Extrinsic base-collector diffusion charge.
|
|
47
|
gx (S)
|
Forward transconductance.
|
|
48
|
gy (S)
|
Reverse transconductance.
|
|
49
|
gz (S)
|
Reverse transconductance.
|
|
50
|
sgpi (S)
|
Conductance sidewall b-e junction.
|
|
51
|
gpix (S)
|
Conductance floor b-e junction.
|
|
52
|
gpiy (S)
|
Early effect on recombination base current.
|
|
53
|
gpiz (S)
|
Early effect on recombination base current.
|
|
54
|
gmux (S)
|
Early effect on avalanche current limiting.
|
|
55
|
gmuy (S)
|
Conductance of avalanche current.
|
|
56
|
gmuz (S)
|
Conductance of avalanche current.
|
|
57
|
gmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
58
|
xgmuex (S)
|
Conductance of extrinsic b-c junction.
|
|
59
|
grcvy (S)
|
Conductance of epilayer current.
|
|
60
|
grcvz (S)
|
Conductance of epilayer current.
|
|
61
|
rb_v (Ω)
|
Variable base resistance.
|
|
62
|
grbvx (S)
|
Early effect on variable base resistance.
|
|
63
|
grbvy (S)
|
Early effect on variable base resistance.
|
|
64
|
grbvz (S)
|
Early effect on variable base resistance.
|
|
65
|
r_e (Ω)
|
Emitter resistance.
|
|
66
|
rb_c (Ω)
|
Constant base resistance.
|
|
67
|
rc_c (Ω)
|
Collector contact resistance.
|
|
68
|
rc_blx (Ω)
|
Extrinsic buried layer resistance.
|
|
69
|
rc_bli (Ω)
|
Intrinsic buried layer resistance.
|
|
70
|
scbe (F)
|
Capacitance sidewall b-e junction.
|
|
71
|
cbex (F)
|
Capacitance floor b-e junction.
|
|
72
|
cbey (F)
|
Early effect on b-e diffusion charge.
|
|
73
|
cbez (F)
|
Early effect on b-e diffusion charge.
|
|
74
|
cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
75
|
cbcy (F)
|
Capacitance floor b-c junction.
|
|
76
|
cbcz (F)
|
Capacitance floor b-c junction.
|
|
77
|
cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
78
|
xcbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
79
|
cb1b2 (F)
|
Capacitance AC current crowding.
|
|
80
|
cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
81
|
cb1b2y (F)
|
Cross-capacitance AC current crowding.
|
|
82
|
cb1b2z (F)
|
Cross-capacitance AC current crowding.
|
|
83
|
gm (S)
|
transconductance.
|
|
84
|
beta
|
Current amplification.
|
|
85
|
gout (S)
|
Output conductance.
|
|
86
|
gmu (S)
|
Feedback transconductance.
|
|
87
|
rb (Ω)
|
Base resistance.
|
|
88
|
rc (Ω)
|
Collector resistance.
|
|
89
|
cbe (F)
|
Base-emitter capacitance.
|
|
90
|
cbc (F)
|
Base-collector capacitance.
|
|
91
|
ft (Hz)
|
Good approximation for cut-off frequency.
|
|
92
|
iqs (A)
|
Current at onset of quasi-saturation.
|
|
93
|
xiwepi
|
Thickness of injection layer normalized to epi layer width.
|
|
94
|
vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
95
|
pdiss (W)
|
Dissipation.
|
|
96
|
tk (K)
|
Actual temperature.
|
|
97
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.
aavl M-33
|
gpix OP-51
|
mc M-63
|
taur M-70
|
ab M-77
|
gpiy OP-52
|
meff O-2
|
tbavl M-98
|
ac M-80
|
gpiz OP-53
|
mlf M-20
|
tempeff O-1
|
acbl M-82
|
grbvx OP-62
|
mlfs M-22
|
tepi M-69
|
acx M-81
|
grbvy OP-63
|
mlr M-26
|
tk OP-96
|
ae M-76
|
grbvz OP-64
|
mtau M-66
|
tnff M-96
|
aepi M-78
|
grcvy OP-59
|
mult I-2
|
tnfr M-97
|
aex M-79
|
grcvz OP-60
|
nbi M-16
|
tnom M-113
|
af M-99
|
gx OP-47
|
nbis M-18
|
tr M-114
|
afn M-100
|
gy OP-48
|
nff M-10
|
tref M-5
|
aqbo M-75
|
gz OP-49
|
nfibrel M-110
|
trise I-4
|
area I-7
|
iavl OP-27
|
nfr M-11
|
tvgcb M-93
|
ath M-108
|
ib OP-3
|
nzcb M-31
|
tvgeb M-90
|
avgcb M-92
|
ib1 OP-19
|
nzeb M-29
|
type M-4
|
avgeb M-89
|
ib1b2 OP-18
|
paramchk M-2
|
vavl M-39
|
axi M-50
|
ib1s OP-20
|
pc M-59
|
vb1c1 OP-12
|
bavl M-36
|
ib2 OP-25
|
pdiss OP-95
|
vb2c1 OP-11
|
beta OP-84
|
ib2s OP-21
|
pe M-54
|
vb2c2 OP-10
|
betadc OP-4
|
ib3 OP-26
|
printscaled I-3
|
vb2c2star OP-94
|
cavl M-34
|
ibf M-19
|
pwr OP-97
|
vb2e1 OP-9
|
cb1b2 OP-79
|
ibfs M-21
|
qb1b2 OP-42
|
vbc OP-8
|
cb1b2x OP-80
|
ibi M-15
|
qbc OP-39
|
vbe OP-6
|
cb1b2y OP-81
|
ibis M-17
|
qbe OP-38
|
vc3c4 OP-14
|
cb1b2z OP-82
|
ibr M-25
|
qe OP-35
|
vc4c1 OP-13
|
cbc OP-90
|
ibrel OP-22
|
qepi OP-41
|
vce OP-7
|
cbcex OP-77
|
ibx M-23
|
qex OP-45
|
vdc M-51
|
cbco M-65
|
ic OP-2
|
qtc OP-40
|
vdcavl M-37
|
cbcx OP-74
|
ic1c2 OP-17
|
qte OP-36
|
vdcctc M-58
|
cbcy OP-75
|
ie OP-5
|
qtex OP-43
|
vde M-53
|
cbcz OP-76
|
iex OP-28
|
r_e OP-65
|
ve1e OP-15
|
cbe OP-89
|
ihc M-49
|
rb OP-87
|
vef M-14
|
cbeo M-56
|
ik M-12
|
rb_c OP-66
|
ver M-13
|
cbex OP-71
|
ikbx M-24
|
rb_v OP-61
|
version M-3
|
cbey OP-72
|
imax M-112
|
rbc M-42
|
vgb M-83
|
cbez OP-73
|
in OP-16
|
rbv M-43
|
vgc M-84
|
cjc M-57
|
iqs OP-92
|
rc OP-88
|
vgcx M-86
|
cje M-52
|
irbc OP-31
|
rc_bli OP-69
|
vge M-85
|
compatible M-115
|
ircbli OP-33
|
rc_blx OP-68
|
vgj M-87
|
cth M-107
|
ircblx OP-32
|
rc_c OP-67
|
vgzcb M-91
|
dais M-95
|
ircc OP-34
|
rcbli M-46
|
vgzeb M-88
|
deg M-71
|
ire OP-30
|
rcblx M-45
|
wavl M-38
|
dta I-1
|
is M-9
|
rcc M-44
|
xcbcex OP-78
|
dvgte M-94
|
isibrel M-109
|
rcv M-47
|
xcjc M-64
|
exavl M-8
|
itoavl M-35
|
re M-41
|
xcje M-55
|
exmod M-6
|
izcb M-30
|
region I-5
|
xext M-27
|
exphi M-7
|
izeb M-28
|
rth M-106
|
xgmuex OP-58
|
ft OP-91
|
iztcb OP-24
|
scbe OP-70
|
xiex OP-29
|
ftaun M-105
|
izteb OP-23
|
scrcv M-48
|
xiwepi OP-93
|
gm OP-83
|
jtype OP-1
|
sfh M-40
|
xp M-62
|
gmin M-111
|
kavl M-103
|
sgpi OP-50
|
xqb M-73
|
gmu OP-86
|
kc M-104
|
sqte OP-37
|
xqex OP-46
|
gmuex OP-57
|
ke M-74
|
swavl M-32
|
xqtex OP-44
|
gmux OP-54
|
kf M-101
|
swvchc M-60
|
xrec M-72
|
gmuy OP-55
|
kfn M-102
|
swvjunc M-61
|
|
gmuz OP-56
|
level M-1
|
taub M-68
|
|
gout OP-85
|
m I-6
|
taue M-67
|
|
Compact Bipolar-Transistor Model (bjtd3500)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd3500 parameter=value ...
Model Parameters
|
1
|
level=3.5e+03
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
10
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
11
|
ver=2.5 V
|
Reverse Early voltage.
|
|
12
|
vef=44 V
|
Forward Early voltage.
|
|
13
|
bf=215
|
Ideal forward current gain.
|
|
14
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
15
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
16
|
mhf=1
|
Non ideality factor of the non-ideal forward base current.
|
|
17
|
mlr=2
|
Non ideality factor of the non-ideal reverse base current.
|
|
18
|
mhr=1
|
Non ideality factor of the ideal reverse base current.
|
|
19
|
mf=1
|
Non ideality factor of main current.
|
|
20
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
21
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
22
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
23
|
bri=7
|
Ideal reverse current gain.
|
|
24
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
25
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
26
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
27
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
28
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
29
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
30
|
re=5 Ω
|
Emitter resistance.
|
|
31
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
32
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
33
|
rcc=12 Ω
|
Collector contact resistance.
|
|
34
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
35
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
36
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
37
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
38
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
39
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
40
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
41
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
42
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
43
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
44
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
45
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
46
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
47
|
pc=0.5
|
Collector-base grading coefficient.
|
|
48
|
xp=0.35
|
Constant part of Cjc.
|
|
49
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
50
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
51
|
cbco=0
|
Collector-base overlap capacitance.
|
|
52
|
vos=0.04 V
|
Voltage describing overshoot.
|
|
53
|
isat=0.067 A
|
Saturation current.
|
|
54
|
repi=6 Ω
|
Ohmic resistance epilayer.
|
|
55
|
rdmin=0
|
Minimum relative collector doping.
|
|
56
|
sbjn=0.1
|
Smoothness parameter Qtc model.
|
|
57
|
sbeb=0.1
|
Smoothness parameter Qtc model.
|
|
58
|
etavdr=0.23
|
Slope-parameter of Vdrift at high electric field.
|
|
59
|
nvdr=4
|
Power describing saturation behavior of Qtc.
|
|
60
|
alfaw=0
|
Smooth switch for reachthrough modelling.
|
|
61
|
sw=0.1
|
Smoothness parameter for reachthrough modelling.
|
|
62
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
63
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
64
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
65
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
66
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
67
|
deg=0 eV
|
Bandgap difference over the base.
|
|
68
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
69
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
70
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
71
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
72
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
73
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
74
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
75
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
76
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
77
|
aisat=-0.37
|
Temperature coefficient of the saturation current.
|
|
78
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
79
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
80
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
81
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
82
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
83
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
84
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
85
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
86
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
87
|
af=2
|
Exponent of the Flicker-noise.
|
|
88
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
89
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
90
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
91
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
92
|
imax=1000 A
|
Explosion current.
|
|
93
|
tnom (deg. C)
|
alias of tnom.
|
|
94
|
tr (deg. C)
|
alias of tnom.
|
|
95
|
simkitver=3.4
|
|
|
96
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
5
|
Vbe (V)
|
External base-emitter bias.
|
|
6
|
Vbc (V)
|
External base-collector bias.
|
|
7
|
Vce (V)
|
External collector-emitter bias.
|
|
8
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
9
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
10
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
11
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
12
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
13
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
14
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
15
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
16
|
In (A)
|
Main current.
|
|
17
|
Ic1c2 (A)
|
Epilayer current.
|
|
18
|
Ib1b2 (A)
|
Pinched-base current.
|
|
19
|
Ib1 (A)
|
Ideal forward base current.
|
|
20
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
21
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
22
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
23
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
24
|
Iex (A)
|
Extrinsic reverse base current.
|
|
25
|
XIex (A)
|
Extrinsic reverse base current.
|
|
26
|
Iavl (A)
|
Avalanche current.
|
|
27
|
IRE (A)
|
Current through emitter resistance.
|
|
28
|
IRBC (A)
|
Current through constant base resistance.
|
|
29
|
IRCC (A)
|
Current through collector contact resistance.
|
|
30
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
31
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
32
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
33
|
Qte (C)
|
Base-emitter depletion charge.
|
|
34
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
35
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
36
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
37
|
Qtc (C)
|
Base-collector depletion charge.
|
|
38
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
39
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
40
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
41
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
42
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
43
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
44
|
gx (1/Ω)
|
Forward transconductance.
|
|
45
|
gy (1/Ω)
|
Reverse transconductance.
|
|
46
|
gz (1/Ω)
|
Reverse transconductance.
|
|
47
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
48
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
49
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
50
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
51
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
52
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
53
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
54
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
55
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
56
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
57
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
58
|
Rbv (Ω)
|
Base resistance.
|
|
59
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
60
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
61
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
62
|
RE (Ω)
|
Emitter resistance.
|
|
63
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
64
|
RCC (Ω)
|
Collector contact resistance.
|
|
65
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
66
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
67
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
68
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
69
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
70
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
71
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
72
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
73
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
74
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
75
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
76
|
Cb1b2 (F)
|
Capacitance AC current crowding.
|
|
77
|
Cb1b2x (F)
|
Cross-capacitance AC current crowding.
|
|
78
|
Cb1b2y (F)
|
Cross-capacitance of the AC current crowding.
|
|
79
|
Cb1b2z (F)
|
Cross-capacitance of the AC current crowding.
|
|
80
|
gm (1/Ω)
|
Transconductance.
|
|
81
|
beta
|
Current amplification.
|
|
82
|
gout (1/Ω)
|
Output conductance.
|
|
83
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
84
|
RB (Ω)
|
Base resistance.
|
|
85
|
Cbe (F)
|
Base-emitter capacitance.
|
|
86
|
Cbc (F)
|
Base-collector capacitance.
|
|
87
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
88
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
89
|
XiWepi (M)
|
Thickness of injection layer.
|
|
90
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
91
|
Pdiss (W)
|
Dissipation.
|
|
92
|
TK (K)
|
Actual temperature.
|
|
93
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BetaDC OP-4
|
SCbe OP-67
|
dvgte M-85
|
pc M-46
|
|
Cb1b2 OP-76
|
SIb1 OP-20
|
etavdr M-57
|
pe M-41
|
|
Cb1b2x OP-77
|
SQte OP-34
|
exavl M-7
|
printscaled I-2
|
|
Cb1b2y OP-78
|
Sgpi OP-47
|
exmod M-5
|
pwr OP-93
|
|
Cb1b2z OP-79
|
TK OP-92
|
exphi M-6
|
rbc M-30
|
|
Cbc OP-86
|
Vb1c1 OP-11
|
fT OP-87
|
rbv M-31
|
|
Cbcex OP-74
|
Vb1c4 OP-12
|
gm OP-80
|
rcbli M-34
|
|
Cbcx OP-71
|
Vb2c1 OP-10
|
gmu OP-83
|
rcblx M-33
|
|
Cbcy OP-72
|
Vb2c2 OP-9
|
gmuex OP-54
|
rcc M-32
|
|
Cbcz OP-73
|
Vb2c2star OP-90
|
gmux OP-51
|
rcv M-35
|
|
Cbe OP-85
|
Vb2e1 OP-8
|
gmuy OP-52
|
rdmin M-54
|
|
Cbex OP-68
|
Vbc OP-6
|
gmuz OP-53
|
re M-29
|
|
Cbey OP-69
|
Vbe OP-5
|
gout OP-82
|
region I-4
|
|
Cbez OP-70
|
Vc3c4 OP-13
|
gpix OP-48
|
repi M-53
|
|
IRBC OP-28
|
Vc4c1 OP-14
|
gpiy OP-49
|
sbeb M-56
|
|
IRCBLI OP-31
|
Vce OP-7
|
gpiz OP-50
|
sbjn M-55
|
|
IRCBLX OP-30
|
Ve1e OP-15
|
grbvx OP-59
|
scrcv M-36
|
|
IRCC OP-29
|
XCbcex OP-75
|
grbvy OP-60
|
sfh M-28
|
|
IRE OP-27
|
XIex OP-25
|
grbvz OP-61
|
sw M-60
|
|
Iavl OP-26
|
XQex OP-43
|
grcvy OP-56
|
taub M-63
|
|
Ib OP-2
|
XQtex OP-41
|
grcvz OP-57
|
taue M-62
|
|
Ib1 OP-19
|
Xgmuex OP-55
|
gx OP-44
|
taur M-65
|
|
Ib1b2 OP-18
|
XiWepi OP-89
|
gy OP-45
|
tempeff O-1
|
|
Ib2 OP-22
|
ab M-70
|
gz OP-46
|
tepi M-64
|
|
Ib3 OP-23
|
ac M-74
|
ibf M-13
|
tnom M-92
|
|
Ic OP-1
|
acbl M-75
|
ibr M-23
|
tr M-93
|
|
Ic1c2 OP-17
|
ae M-69
|
ihc M-37
|
tref M-3
|
|
Ie OP-3
|
aepi M-72
|
ik M-9
|
trise I-3
|
|
Iex OP-24
|
aex M-73
|
imax M-91
|
tvgeb M-84
|
|
In OP-16
|
af M-86
|
is M-8
|
type M-90
|
|
Iqs OP-88
|
aisat M-76
|
isat M-52
|
vavl M-27
|
|
Izteb OP-21
|
alfaw M-59
|
izeb M-20
|
vdc M-45
|
|
Pdiss OP-91
|
aqbo M-68
|
kavl M-89
|
vde M-40
|
|
Qb1b2 OP-39
|
area I-6
|
kf M-87
|
vef M-11
|
|
Qbc OP-36
|
avgeb M-83
|
kfn M-88
|
ver M-10
|
|
Qbe OP-35
|
axi M-38
|
level M-1
|
vgb M-79
|
|
Qe OP-32
|
beta OP-81
|
m I-5
|
vgc M-80
|
|
Qepi OP-38
|
bf M-12
|
mc M-48
|
vgj M-81
|
|
Qex OP-42
|
bri M-22
|
meff O-2
|
vgzeb M-82
|
|
Qtc OP-37
|
cbco M-50
|
mf M-18
|
vlr M-24
|
|
Qte OP-33
|
cbeo M-43
|
mhf M-15
|
vos M-51
|
|
Qtex OP-40
|
cjc M-44
|
mhr M-17
|
wavl M-26
|
|
RB OP-84
|
cje M-39
|
mlf M-14
|
xcjc M-49
|
|
RBC OP-63
|
compatible M-94
|
mlr M-16
|
xcje M-42
|
|
RCBLI OP-66
|
dais M-71
|
mtau M-61
|
xext M-25
|
|
RCBLX OP-65
|
deg M-66
|
mult I-1
|
xibi M-19
|
|
RCC OP-64
|
dta M-4
|
nvdr M-58
|
xp M-47
|
|
RE OP-62
|
dvgbf M-77
|
nzeb M-21
|
xrec M-67
|
|
Rbv OP-58
|
dvgbr M-78
|
paramchk M-2
|
|
Compact Bipolar-Transistor Model (bjtd3500t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name c b e dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=fwd
|
Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
area=1
|
Multiplication factor for bjt devices.
|
Model Definition
model modelName bjtd3500t parameter=value ...
Model Parameters
|
1
|
level=3.5e+03
|
Bipolar Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
mexlev=2
|
Flag for ELDO model.
|
|
4
|
tref=25 deg. C
|
Reference temperature.
|
|
5
|
dta=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
exmod=1
|
Flag for extended modelling of reverse current gain.
|
|
7
|
exphi=1
|
Flag for the distributed high-frequency effects in transient.
|
|
8
|
exavl=0
|
Flag for extended modelling of avalanche currents.
|
|
9
|
is=2.2e-17 A
|
Collector-emitter saturation current.
|
|
10
|
ik=0.1 A
|
Collector-emitter high injection knee current.
|
|
11
|
ver=2.5 V
|
Reverse Early voltage.
|
|
12
|
vef=44 V
|
Forward Early voltage.
|
|
13
|
bf=215
|
Ideal forward current gain.
|
|
14
|
ibf=2.7e-15 A
|
Saturation current of the non-ideal forward base current.
|
|
15
|
mlf=2
|
Non ideality factor of the non-ideal forward base current.
|
|
16
|
mhf=1
|
Non ideality factor of the non-ideal forward base current.
|
|
17
|
mlr=2
|
Non ideality factor of the non-ideal reverse base current.
|
|
18
|
mhr=1
|
Non ideality factor of the ideal reverse base current.
|
|
19
|
mf=1
|
Non ideality factor of main current.
|
|
20
|
xibi=0
|
Part of ideal base current that belongs to the sidewall.
|
|
21
|
izeb=0 A
|
Pre-factor of emitter-base Zener tunneling current.
|
|
22
|
nzeb=22
|
Coefficient of emitter-base Zener tunneling current.
|
|
23
|
bri=7
|
Ideal reverse current gain.
|
|
24
|
ibr=1e-15 A
|
Saturation current of the non-ideal reverse base current.
|
|
25
|
vlr=0.2 V
|
Cross-over voltage of the non-ideal reverse base current.
|
|
26
|
xext=0.63
|
Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).
|
|
27
|
wavl=1.1e-06 m
|
Epilayer thickness used in weak-avalanche model.
|
|
28
|
vavl=3 V
|
Voltage determining curvature of avalanche current.
|
|
29
|
sfh=0.3
|
Current spreading factor of avalanche model (when EXAVL=1).
|
|
30
|
re=5 Ω
|
Emitter resistance.
|
|
31
|
rbc=23 Ω
|
Constant part of the base resistance.
|
|
32
|
rbv=18 Ω
|
Zero-bias value of the variable part of the base resistance.
|
|
33
|
rcc=12 Ω
|
Collector contact resistance.
|
|
34
|
rcblx=0
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
35
|
rcbli=0
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
36
|
rcv=150 Ω
|
Resistance of the un-modulated epilayer.
|
|
37
|
scrcv=1.25e+03 Ω
|
|
|
|
|
Space charge resistance of the epilayer.
|
|
38
|
ihc=0.004 A
|
Critical current for velocity saturation in the epilayer.
|
|
39
|
axi=0.3
|
Smoothness parameter for the onset of quasi-saturation.
|
|
40
|
cje=7.3e-14 F
|
Zero-bias emitter-base depletion capacitance.
|
|
41
|
vde=0.95 V
|
Emitter-base diffusion voltage.
|
|
42
|
pe=0.4
|
Emitter-base grading coefficient.
|
|
43
|
xcje=0.4
|
Fraction of the emitter-base depletion capacitance that belongs to the sidewall.
|
|
44
|
cbeo=0
|
Emitter-base overlap capacitance.
|
|
45
|
cjc=7.8e-14 F
|
Zero-bias collector-base depletion capacitance.
|
|
46
|
vdc=0.68 V
|
Collector-base diffusion voltage.
|
|
47
|
pc=0.5
|
Collector-base grading coefficient.
|
|
48
|
xp=0.35
|
Constant part of Cjc.
|
|
49
|
mc=0.5
|
Coefficient for the current modulation of the collector-base depletion capacitance.
|
|
50
|
xcjc=0.032
|
Fraction of the collector-base depletion capacitance under the emitter.
|
|
51
|
cbco=0
|
Collector-base overlap capacitance.
|
|
52
|
vos=0.04 V
|
Voltage describing overshoot.
|
|
53
|
isat=0.067 A
|
Saturation current.
|
|
54
|
repi=6 Ω
|
Ohmic resistance epilayer.
|
|
55
|
rdmin=0
|
Minimum relative collector doping.
|
|
56
|
sbjn=0.1
|
Smoothness parameter Qtc model.
|
|
57
|
sbeb=0.1
|
Smoothness parameter Qtc model.
|
|
58
|
etavdr=0.23
|
Slope-parameter of Vdrift at high electric field.
|
|
59
|
nvdr=4
|
Power describing saturation behavior of Qtc.
|
|
60
|
alfaw=0
|
Smooth switch for reachthrough modelling.
|
|
61
|
sw=0.1
|
Smoothness parameter for reachthrough modelling.
|
|
62
|
mtau=1
|
Non-ideality factor of the emitter stored charge.
|
|
63
|
taue=2e-12 s
|
Minimum transit time of stored emitter charge.
|
|
64
|
taub=4.2e-12 s
|
Transit time of stored base charge.
|
|
65
|
tepi=4.1e-11 s
|
Transit time of stored epilayer charge.
|
|
66
|
taur=5.2e-10 s
|
Transit time of reverse extrinsic base charge.
|
|
67
|
deg=0 eV
|
Bandgap difference over the base.
|
|
68
|
xrec=0
|
Pre-factor of the recombination part of Ib1.
|
|
69
|
aqbo=0.3
|
Temperature coefficient of the zero-bias base charge.
|
|
70
|
ae=0
|
Temperature coefficient of the resistivity of the emitter.
|
|
71
|
ab=1
|
Temperature coefficient of the resistivity of the base.
|
|
72
|
dais=0
|
Parameter for fine tuning of temperature dependence of collector-emitter saturation current.
|
|
73
|
aepi=2.5
|
Temperature coefficient of the resistivity of the epilayer.
|
|
74
|
aex=0.62
|
Temperature coefficient of the resistivity of the extrinsic base.
|
|
75
|
ac=2
|
Temperature coefficient of the resistivity of the collector contact.
|
|
76
|
acbl=2
|
Temperature coefficient of the resistivity of the collector buried layer.
|
|
77
|
aisat=-0.37
|
Temperature coefficient of the saturation current.
|
|
78
|
dvgbf=0.05 V
|
Bandgap voltage difference of forward current gain.
|
|
79
|
dvgbr=0.045 V
|
Bandgap voltage difference of reverse current gain.
|
|
80
|
vgb=1.17 V
|
Bandgap voltage of the base.
|
|
81
|
vgc=1.18 V
|
Bandgap voltage of the collector.
|
|
82
|
vgj=1.15 V
|
Bandgap voltage recombination emitter-base junction.
|
|
83
|
vgzeb=1.15 V
|
Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.
|
|
84
|
avgeb=0.000473 V/K
|
|
|
|
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
85
|
tvgeb=636 K
|
Temperature scaling coefficient of emitter-base Zener tunneling current.
|
|
86
|
dvgte=0.05 V
|
Bandgap voltage difference of emitter stored charge.
|
|
87
|
af=2
|
Exponent of the Flicker-noise.
|
|
88
|
kf=2e-11
|
Flicker-noise coefficient of the ideal base current.
|
|
89
|
kfn=2e-11
|
Flicker-noise coefficient of the non-ideal base current.
|
|
90
|
kavl=0
|
Switch for white noise contribution due to avalanche.
|
|
91
|
rth=300 K/W
|
Thermal resistance.
|
|
92
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
93
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
94
|
dtmax=1e+03 K
|
Maximal dynamic temperature increase.
|
|
95
|
exrth=0
|
Flag for extended modelling of non-linear thermal resistance.
|
|
96
|
type=npn
|
Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.
|
|
97
|
imax=1000 A
|
Explosion current.
|
|
98
|
tnom (deg. C)
|
Alias of tnom.
|
|
99
|
tr (deg. C)
|
Alias of tnom.
|
|
100
|
simkitver=3.4
|
|
|
101
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
Ic (A)
|
External DC collector current.
|
|
2
|
Ib (A)
|
External DC base current.
|
|
3
|
Ie (A)
|
External DC emitter current.
|
|
4
|
BetaDC
|
External DC current gain Ic/Ib.
|
|
5
|
Vbe (V)
|
External base-emitter bias.
|
|
6
|
Vbc (V)
|
External base-collector bias.
|
|
7
|
Vce (V)
|
External collector-emitter bias.
|
|
8
|
Vb2e1 (V)
|
Internal base-emitter bias.
|
|
9
|
Vb2c2 (V)
|
Internal base-collector bias.
|
|
10
|
Vb2c1 (V)
|
Internal base-collector bias including epilayer.
|
|
11
|
Vb1c1 (V)
|
External base-collector bias without contact resistances.
|
|
12
|
Vb1c4 (V)
|
External base-collector bias with contact resistance RCBLI.
|
|
13
|
Vc3c4 (V)
|
External collector-collector bias over contact resistance RCBLX.
|
|
14
|
Vc4c1 (V)
|
Bias over intrinsic buried layer.
|
|
15
|
Ve1e (V)
|
Bias over emitter resistance.
|
|
16
|
In (A)
|
Main current.
|
|
17
|
Ic1c2 (A)
|
Epilayer current.
|
|
18
|
Ib1b2 (A)
|
Pinched-base current.
|
|
19
|
Ib1 (A)
|
Ideal forward base current.
|
|
20
|
SIb1 (A)
|
Ideal side-wall base current.
|
|
21
|
Izteb (A)
|
Zener tunneling current in the emitter base junction.
|
|
22
|
Ib2 (A)
|
Non-ideal forward base current.
|
|
23
|
Ib3 (A)
|
Non-ideal reverse base current.
|
|
24
|
Iex (A)
|
Extrinsic reverse base current.
|
|
25
|
XIex (A)
|
Extrinsic reverse base current.
|
|
26
|
Iavl (A)
|
Avalanche current.
|
|
27
|
IRE (A)
|
Current through emitter resistance.
|
|
28
|
IRBC (A)
|
Current through constant base resistance.
|
|
29
|
IRCC (A)
|
Current through collector contact resistance.
|
|
30
|
IRCBLX (A)
|
Current through extrinsic collector resistance.
|
|
31
|
IRCBLI (A)
|
Current through intrinsic collector resistance.
|
|
32
|
Qe (C)
|
Emitter charge or emitter neutral charge.
|
|
33
|
Qte (C)
|
Base-emitter depletion charge.
|
|
34
|
SQte (C)
|
Sidewall base-emitter depletion charge.
|
|
35
|
Qbe (C)
|
Base-emitter diffusion charge.
|
|
36
|
Qbc (C)
|
Base-collector diffusion charge.
|
|
37
|
Qtc (C)
|
Base-collector depletion charge.
|
|
38
|
Qepi (C)
|
Epilayer diffusion charge.
|
|
39
|
Qb1b2 (C)
|
AC current crowding charge.
|
|
40
|
Qtex (C)
|
Extrinsic base-collector depletion charge.
|
|
41
|
XQtex (C)
|
Extrinsic base-collector depletion charge.
|
|
42
|
Qex (C)
|
Extrinsic base-collector diffusion charge.
|
|
43
|
XQex (C)
|
Extrinsic base-collector diffusion charge.
|
|
44
|
gx (1/Ω)
|
Forward transconductance.
|
|
45
|
gy (1/Ω)
|
Reverse transconductance.
|
|
46
|
gz (1/Ω)
|
Reverse transconductance.
|
|
47
|
Sgpi (1/Ω)
|
Conductance sidewall b-e junction.
|
|
48
|
gpix (1/Ω)
|
Conductance floor b-e junction.
|
|
49
|
gpiy (1/Ω)
|
Early effect on recombination base current.
|
|
50
|
gpiz (1/Ω)
|
Early effect on recombination base current.
|
|
51
|
gmux (1/Ω)
|
Early effect on avalanche current limiting.
|
|
52
|
gmuy (1/Ω)
|
Conductance of avalanche current.
|
|
53
|
gmuz (1/Ω)
|
Conductance of avalanche current.
|
|
54
|
gmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
55
|
Xgmuex (1/Ω)
|
Conductance extrinsic b-c junction.
|
|
56
|
grcvy (1/Ω)
|
Conductance of the epilayer current.
|
|
57
|
grcvz (1/Ω)
|
Conductance of the epilayer current.
|
|
58
|
Rbv (Ω)
|
Base resistance.
|
|
59
|
grbvx (1/Ω)
|
Early-effect on base resistance.
|
|
60
|
grbvy (1/Ω)
|
Early-effect on base resistance.
|
|
61
|
grbvz (1/Ω)
|
Early-effect on base resistance:.
|
|
62
|
RE (Ω)
|
Emitter resistance.
|
|
63
|
RBC (Ω)
|
Constant part of the base resistance.
|
|
64
|
RCC (Ω)
|
Collector contact resistance.
|
|
65
|
RCBLX (Ω)
|
Resistance of collector buried layer under the extrinsic transistor.
|
|
66
|
RCBLI (Ω)
|
Resistance of collector buried layer under the Intrinsic transistor.
|
|
67
|
SCbe (F)
|
Capacitance sidewall b-e junction.
|
|
68
|
Cbex (F)
|
Capacitance floor b-e junction.
|
|
69
|
Cbey (F)
|
Early effect on b-e diffusion charge.
|
|
70
|
Cbez (F)
|
Early effect on b-e diffusion charge.
|
|
71
|
Cbcx (F)
|
Early effect on b-c diffusion charge.
|
|
72
|
Cbcy (F)
|
Capacitance floor b-c junction.
|
|
73
|
Cbcz (F)
|
Capacitance floor b-c junction.
|
|
74
|
Cbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
75
|
XCbcex (F)
|
Capacitance extrinsic b-c junction.
|
|
76
|
Cb1b2 (F)
|
Capacitance of the AC current crowding.
|
|
77
|
Cb1b2x (F)
|
Cross-capacitance of the AC current crowding.
|
|
78
|
Cb1b2y (F)
|
Cross-capacitance of the AC current crowding.
|
|
79
|
Cb1b2z (F)
|
Cross-capacitance of the AC current crowding.
|
|
80
|
gm (1/Ω)
|
Transconductance.
|
|
81
|
beta
|
Current amplification.
|
|
82
|
gout (1/Ω)
|
Output conductance.
|
|
83
|
gmu (1/Ω)
|
Feedback transconductance.
|
|
84
|
RB (Ω)
|
Base resistance.
|
|
85
|
Cbe (F)
|
Base-emitter capacitance.
|
|
86
|
Cbc (F)
|
Base-collector capacitance.
|
|
87
|
fT (Hz)
|
Good approximation for cut-off frequency.
|
|
88
|
Iqs (A)
|
Current at onset of quasi-saturation.
|
|
89
|
XiWepi (M)
|
Thickness of injection layer.
|
|
90
|
Vb2c2star (V)
|
Physical value of internal base-collector bias.
|
|
91
|
Pdiss (W)
|
Dissipation.
|
|
92
|
TK (K)
|
Actual temperature.
|
|
93
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BetaDC OP-4
|
SIb1 OP-20
|
dvgbr M-78
|
paramchk M-2
|
|
Cb1b2 OP-76
|
SQte OP-34
|
dvgte M-85
|
pc M-46
|
|
Cb1b2x OP-77
|
Sgpi OP-47
|
etavdr M-57
|
pe M-41
|
|
Cb1b2y OP-78
|
TK OP-92
|
exavl M-7
|
printscaled I-2
|
|
Cb1b2z OP-79
|
Vb1c1 OP-11
|
exmod M-5
|
pwr OP-93
|
|
Cbc OP-86
|
Vb1c4 OP-12
|
exphi M-6
|
rbc M-30
|
|
Cbcex OP-74
|
Vb2c1 OP-10
|
exrth M-94
|
rbv M-31
|
|
Cbcx OP-71
|
Vb2c2 OP-9
|
fT OP-87
|
rcbli M-34
|
|
Cbcy OP-72
|
Vb2c2star OP-90
|
gm OP-80
|
rcblx M-33
|
|
Cbcz OP-73
|
Vb2e1 OP-8
|
gmu OP-83
|
rcc M-32
|
|
Cbe OP-85
|
Vbc OP-6
|
gmuex OP-54
|
rcv M-35
|
|
Cbex OP-68
|
Vbe OP-5
|
gmux OP-51
|
rdmin M-54
|
|
Cbey OP-69
|
Vc3c4 OP-13
|
gmuy OP-52
|
re M-29
|
|
Cbez OP-70
|
Vc4c1 OP-14
|
gmuz OP-53
|
region I-4
|
|
IRBC OP-28
|
Vce OP-7
|
gout OP-82
|
repi M-53
|
|
IRCBLI OP-31
|
Ve1e OP-15
|
gpix OP-48
|
rth M-90
|
|
IRCBLX OP-30
|
XCbcex OP-75
|
gpiy OP-49
|
sbeb M-56
|
|
IRCC OP-29
|
XIex OP-25
|
gpiz OP-50
|
sbjn M-55
|
|
IRE OP-27
|
XQex OP-43
|
grbvx OP-59
|
scrcv M-36
|
|
Iavl OP-26
|
XQtex OP-41
|
grbvy OP-60
|
sfh M-28
|
|
Ib OP-2
|
Xgmuex OP-55
|
grbvz OP-61
|
sw M-60
|
|
Ib1 OP-19
|
XiWepi OP-89
|
grcvy OP-56
|
taub M-63
|
|
Ib1b2 OP-18
|
ab M-70
|
grcvz OP-57
|
taue M-62
|
|
Ib2 OP-22
|
ac M-74
|
gx OP-44
|
taur M-65
|
|
Ib3 OP-23
|
acbl M-75
|
gy OP-45
|
tempeff O-1
|
|
Ic OP-1
|
ae M-69
|
gz OP-46
|
tepi M-64
|
|
Ic1c2 OP-17
|
aepi M-72
|
ibf M-13
|
tnom M-97
|
|
Ie OP-3
|
aex M-73
|
ibr M-23
|
tr M-98
|
|
Iex OP-24
|
af M-86
|
ihc M-37
|
tref M-3
|
|
In OP-16
|
aisat M-76
|
ik M-9
|
trise I-3
|
|
Iqs OP-88
|
alfaw M-59
|
imax M-96
|
tvgeb M-84
|
|
Izteb OP-21
|
aqbo M-68
|
is M-8
|
type M-95
|
|
Pdiss OP-91
|
area I-6
|
isat M-52
|
vavl M-27
|
|
Qb1b2 OP-39
|
ath M-92
|
izeb M-20
|
vdc M-45
|
|
Qbc OP-36
|
avgeb M-83
|
kavl M-89
|
vde M-40
|
|
Qbe OP-35
|
axi M-38
|
kf M-87
|
vef M-11
|
|
Qe OP-32
|
beta OP-81
|
kfn M-88
|
ver M-10
|
|
Qepi OP-38
|
bf M-12
|
level M-1
|
vgb M-79
|
|
Qex OP-42
|
bri M-22
|
m I-5
|
vgc M-80
|
|
Qtc OP-37
|
cbco M-50
|
mc M-48
|
vgj M-81
|
|
Qte OP-33
|
cbeo M-43
|
meff O-2
|
vgzeb M-82
|
|
Qtex OP-40
|
cjc M-44
|
mf M-18
|
vlr M-24
|
|
RB OP-84
|
cje M-39
|
mhf M-15
|
vos M-51
|
|
RBC OP-63
|
compatible M-99
|
mhr M-17
|
wavl M-26
|
|
RCBLI OP-66
|
cth M-91
|
mlf M-14
|
xcjc M-49
|
|
RCBLX OP-65
|
dais M-71
|
mlr M-16
|
xcje M-42
|
|
RCC OP-64
|
deg M-66
|
mtau M-61
|
xext M-25
|
|
RE OP-62
|
dta M-4
|
mult I-1
|
xibi M-19
|
|
Rbv OP-58
|
dtmax M-93
|
nvdr M-58
|
xp M-47
|
|
SCbe OP-67
|
dvgbf M-77
|
nzeb M-21
|
xrec M-67
|
JFETIDG Model (jfetidg)
JFETIDG is a compact model for four-terminal (that is, independent dual-gate) JFETs that is applicable to all regions of operation. It can also be applied to:
-
resistors (diffused or polysilicon) with a metal shield
-
the drift region of LDMOS transistors
-
the collector resistance of four-terminal vertical BJTs
-
junctionless MOS transistors
This chapter contains the following information for the JFETIDG model:
Model Concepts
A cross-section of an n-channel device that can be modeled by JFETIDG is shown below (the thicker dashed lines represent the edges of the depletion regions in the channel region, from both the bottom and top gates; the metallurgical thickness of the channel is tm).
JFETIDG uses a unified, physical formulation for depletion pinching of the conducting channel that is applicable to both pn-junction gates and MOS gates, and independent of gate type (apart from how the JFETIDG model parameters are computed from physical parameters). JFETIDG uses an exact solution for depletion pinching modulation of the channel current Ids, which is more accurate than linearizing with respect to the mid-point-potential. JFETIDG also models:
-
self-heating
-
velocity saturation (inherited from the r3 model)
-
channel length modulation (CLM)
-
drain-induced barrier lowering (DIBL)
-
impact ionization (i.e. weak avalanche)
-
mobility modulation, by both bottom and top gate biases
-
parasitic pn-junction leakage current
-
parasitic pn-junction breakdown current
-
depletion and diffusion capacitance for pn-junction gates
-
fixed capacitance for MOS gates
-
selectable local (single geometry) and global (geometry dependent) models
-
channel conductance and depletion modulation parameters can either be specified directly or calculated from physical doping and layer thickness values
-
temperature dependence
-
noise, including from parasitic pn-junction currents
-
statistical variations
The large-signal equivalent circuit for JFETIDG is shown below.
The power generated by the electrical part of JFETIDG (the left side of the network above), Ith, drives the thermal part of JFETIDG (the right side of the network above), and the behavior of the electrical part depends on the local temperature rise, Temp(dt), generated by the thermal part. The electrical and thermal parts are solved self-consistently. The parasitic capacitances include both linear components (for MOS gates) and non-linear components (for pn-junction gates); The parasitic currents include pn-junction, breakdown, and impact ionization components; these are only applicable to pn-junction gates so are turned off for MOS gates.
Terminology and Notation
|
non-pinch-off
|
operation when neither end of a device is pinched off (analogous to MOSFET strong inversion non-saturation)
|
|
drain pinch-off
|
operation when one end of a device is pinched off (analogous to MOSFET strong inversion saturation)
|
|
source pinch-off
|
operation when both ends of a device are pinched off (analogous to MOSFET weak inversion)
|
|
Vds
|
voltage across the intrinsic body portion of the device V(di)-V(si)
|
|
Ids
|
current through the intrinsic body portion of the device (see equivalent circuit below)
|
|
Vgbs
|
bottom-gate to intrinsic source voltage V(gb)-V(si)
|
|
Vgbd
|
bottom-gate to intrinsic drain voltage V(gb)-V(di)
|
|
Vgts
|
top-gate to intrinsic source voltage V(gt)-V(si)
|
|
Vgtd
|
top-gate to intrinsic drain voltage V(gt)-V(di)
|
|
[sd]
|
applies for both source and drain
|
|
[bt]
|
applies for both bottom and top gate
|
|
[ap]
|
applies for both area and perimeter components
|
|
[2]
|
also applies to an optional second perimeter component
|
Parameters and nodes are set in Courier New font. k is Boltzmann's constant, q is the magnitude of the electronic charge, and ni is the intrinsic carrier concentration. The thermal voltage is
t=kT/q
where
For convenience, and to be able to help debug circuit problems and understand what is the dominant source of nonlinearity, the physical effects can be turned off individually.
-
setting
swlin to 1 turns off all nonlinearities -
setting
swet to 0 turns off self-heating -
setting the thermal conductance
gth to 0 when the local termperature rise port dt is not connected turns off self-heating -
setting
ecrit to be >=109 V/m turns off modeling of velocity saturation (the breakdown field for silicon is about 3×107 V/m) -
setting
dfbfac to 0 turns off modeling of depletion pinching by the bottom gate -
setting
dftfac to 0 turns off modeling of depletion pinching by the top gate
Any combination of sources of nonlinearity can be switched off by appropriate specification of these parameters.
Model Version
SPECTRE supports JFETIDG model version 1.0.0.
Component Statements
This device is supported within altergroups.
Instance Definition
Name ( d gb s gt [dt] ) ModelName <parameter=value> ...
Instance Parameters
|
1
|
w=1e-06 m
|
Design width of JFET body.
|
|
2
|
l=1e-06 m
|
Design length of JFET body.
|
|
3
|
wd=0 m
|
Dogbone width (total; not per side).
|
|
4
|
asb=0 m^2
|
Area of source to bottom gate.
|
|
5
|
ast=0 m^2
|
Area of source to top gate.
|
|
6
|
psb=0 m
|
Perimeter of source to bottom gate.
|
|
7
|
psb2=0 m
|
Perimeter of source to bottom gate (2nd component).
|
|
8
|
pst=0 m
|
Perimeter of source to top gate.
|
|
9
|
pst2=0 m
|
Perimeter of source to top gate (2nd component).
|
|
10
|
cs=0
|
Number of contacts at source end.
|
|
11
|
adb=0 m^2
|
Area of drain to bottom gate.
|
|
12
|
adt=0 m^2
|
Area of drain to top gate.
|
|
13
|
pdb=0 m
|
Perimeter of drain to bottom gate.
|
|
14
|
pdb2=0 m
|
Perimeter of drain to bottom gate (2nd component).
|
|
15
|
pdt=0 m
|
Perimeter of drain to top gate.
|
|
16
|
pdt2=0 m
|
Perimeter of drain to top gate (2nd component).
|
|
17
|
cd=0
|
Number of contacts at drain end.
|
|
18
|
trise=0 degC
|
Local temperature delta to ambient (before self-heating).
|
|
19
|
dta=0 degC
|
Local temperature delta to ambient (before self-heating).
|
|
20
|
dtemp=0 degC
|
Local temperature delta to ambient (before self-heating).
|
|
21
|
nsmm_rsh=0
|
Number of standard deviations of local variation for rsh.
|
|
22
|
nsmm_w=0
|
Number of standard deviations of local variation for w.
|
|
23
|
nsmm_l=0
|
Number of standard deviations of local variation for l.
|
|
24
|
mult=1
|
Multiplicity factor.
|
|
25
|
swnoise=1
|
Switch to include noise: 0=no and 1=yes.
|
|
26
|
swet=1
|
Switch to include self-heating: 0=no and 1=yes.
|
|
27
|
swlin=0
|
Switch to force linearity: 0=no and 1=yes.
|
|
28
|
swmman
|
Switch to enable mismatch analysis: 0=no and 1=yes.
|
|
29
|
m=1
|
Alias of mult.
|
The switch parameters can also be specified as model parameters, and a value specified on an instance line overrides a value specified on a model card.
The following figure shows how the instance parameters should be determined for a typical JFET layout.
The total width of the source end region is:
where the contact width, contact spacing, and contact-to-edge distances, wc, wc2c, and wc2e, respectively, are shown in the layout.
If cs is zero (which happens for non-end sections of a multi-section model) then as[bt] and ps[bt] should be calculated as half of the area and length direction perimeter, respectively, of the body of the JFET (that is, 0.5·w·l and l, respectivey). If cs is greater than zero then the area and (non-body adjacent) perimeter of the left end region should be added to these values. Similarly for ad[bt] and pd[bt].
Model Definition
model ModelName jfetidg <parameter=value> ...
Model Parameters
The naming convention for parameters follows the PSP style. Global model parameters append o, l, w, lw, and so on, to the name of the associated local geometry model parameter.
|
1
|
level=1
|
Model level.
|
|
2
|
paramchk=0
|
Model parameter checking selector.
|
|
3
|
version=1
|
Model version.
|
|
4
|
subversion=0
|
Model subversion.
|
|
5
|
revision=2
|
Model revision.
|
|
6
|
tmin=100 degC
|
Minimum ambient temperature.
|
|
7
|
tmax=500 degC
|
Maximum ambient temperature.
|
|
8
|
gmin=1e-12 S
|
Minimum parasitic conductance.
|
|
9
|
imax=1 A
|
Current at which to linearize diode currents.
|
|
10
|
scale=1
|
Scale factor for instance geometries.
|
|
11
|
shrink=0 %
|
Shrink percentage for instance geometries.
|
|
12
|
rthresh=0.001 Ω
|
Threshold to switch end resistance to V=I*R form.
|
|
13
|
type=n
|
JFET type: +1=n-body and -1=p-body. Possible values are n and p.
|
|
14
|
swbgmos=0
|
Switch to indicate bottom gate type: 0=pn-junction and 1=mos.
|
|
15
|
swtgmos=0
|
Switch to indicate top gate type: 0=pn-junction and 1=mos.
|
|
16
|
swgeo=1
|
Switch for geometry modeling: 0=local and 1=global.
|
|
17
|
swgdep=1
|
Switch for geometry mapping basis: 0=drawn and 1=effective.
|
|
18
|
tnom=27 degC
|
Nominal (reference) temperature.
|
|
19
|
lmin=0.0 m
|
Minimum allowed drawn length.
|
|
20
|
lmax=9e+09 m
|
Maximum allowed drawn length.
|
|
21
|
wmin=0.0 m
|
Minimum allowed drawn width.
|
|
22
|
wmax=9.9e+09 m
|
Maximum allowed drawn width.
|
|
23
|
jmax=1e+08 A/m
|
Maximum current density.
|
|
24
|
vmax=9.9e09 V
|
Maximum drain or source voltage w.r.t. either gate.
|
|
25
|
tminclip=(-100) degC
|
|
|
|
Clip minimum temperature.
|
|
26
|
tmaxclip=800 degC
|
Clip maximum temperature.
|
|
27
|
grpo=1e-12
|
Minimum body conductance in pinch-off (ratio w.r.t. Vc=0).
|
|
28
|
xw=0 m
|
Width offset (total).
|
|
29
|
nwxw=0 m
|
Narrow width offset correction coefficient.
|
|
30
|
wexw=0 m
|
Webbing effect width offset correction coefficient (for dogboned devices).
|
|
31
|
fdrwo=1e-06 m
|
Finite doping width offset reference width.
|
|
32
|
fdxwo=0 m
|
Finite doping width offset width value for wide devices.
|
|
33
|
xl=0 m
|
Length offset (total).
|
|
34
|
xlw=0 m
|
Width dependence of length offset.
|
|
35
|
dxlsat=0 m
|
Additional length offset for velocity saturation calculation.
|
|
36
|
tm=5e-07 m
|
Channel thickness (metallurgical).
|
|
37
|
nc=1e+23 /m^3
|
Channel doping concentration.
|
|
38
|
nb=1e+22 /m^3
|
Bottom-gate doping concentration.
|
|
39
|
toxb=4e-07 m
|
Bottom-gate oxide thickness.
|
|
40
|
vfbb=0 V
|
Bottom-gate flatband voltage.
|
|
41
|
nt=1e+26 /m^3
|
Top-gate doping concentration.
|
|
42
|
toxt=4e-07 m
|
Top-gate xide thickness.
|
|
43
|
vfbt=0 V
|
Top-gate flatband voltage.
|
|
44
|
dfb=0.01 /V^0.5
|
Bottom-gate depletion factor (overrides calculation if specified).
|
|
45
|
dfbo=0.01 /V^0.5
|
dfb geometry independent part.
|
|
46
|
dfbl=0
|
dfb 1/l coefficient.
|
|
47
|
dfble=1
|
dfb 1/l exponent.
|
|
48
|
dfbw=0
|
dfb 1/w coefficient.
|
|
49
|
dfbwe=1
|
dfb 1/w exponent.
|
|
50
|
dfblw=0
|
dfb 1/(l*w) coefficient.
|
|
51
|
dfbfac=1
|
dfb adjustment coefficient.
|
|
52
|
psirb=2 V
|
Bottom-gate depletion potential (overrides calculation if specified).
|
|
53
|
psirbo=2 V
|
psirb geometry independent part.
|
|
54
|
psirbl=0
|
psirb 1/l coefficient.
|
|
55
|
psirble=1
|
psirb 1/l exponent.
|
|
56
|
psirbw=0
|
psirb 1/w coefficient.
|
|
57
|
psirbwe=1
|
psirb 1/w exponent.
|
|
58
|
psirblw=0
|
psirb 1/(l*w) coefficient.
|
|
59
|
psirbfac=1
|
psirb adjustment coefficient.
|
|
60
|
dft=0.01 /V^0.5
|
Top-gate depletion factor (overrides calculation if specified).
|
|
61
|
dfto=0.01 /V^0.5
|
dft geometry independent part.
|
|
62
|
dftl=0.0
|
dft 1/l coefficient.
|
|
63
|
dftle=1.0
|
dft 1/l exponent.
|
|
64
|
dftw=0.0
|
dft 1/w coefficient.
|
|
65
|
dftwe=1.0
|
dft 1/w exponent.
|
|
66
|
dftlw=0.0
|
dft 1/(l*w) coefficient.
|
|
67
|
dftfac=1.0
|
dft adjustment coefficient.
|
|
68
|
psirt=2.0 V
|
Top-gate depletion potential (overrides calculation if specified).
|
|
69
|
psirto=2.0 V
|
psirt geometry independent part.
|
|
70
|
psirtl=0.0
|
psirt 1/l coefficient.
|
|
71
|
psirtle=1.0
|
psirt 1/l exponent.
|
|
72
|
psirtw=0.0
|
psirt 1/w coefficient.
|
|
73
|
psirtwe=1.0
|
psirt 1/w exponent.
|
|
74
|
psirtlw=0.0
|
psirt 1/(l*w) coefficient.
|
|
75
|
psirtfac=1.0
|
psirt adjustment coefficient.
|
|
76
|
mu0=0.05 m^2/V/s
|
Low-field mobility
|
|
77
|
r0=100 Ohm
|
Zero-bias resistance.
|
|
78
|
rsh0=100 Ohm/sq
|
Zero-bias sheet resistance (overrides calculation if specified).
|
|
79
|
rzd=100 Ohm
|
Zero-depletion resistance.
|
|
80
|
rshzd=100 Ohm/sq
|
Zero-depletion sheet resistance (overrides calculation if specified).
|
|
81
|
rcs=0 Ohm
|
Source contact resistance.
|
|
82
|
rcd=0 Ohm
|
Drain contact resistance.
|
|
83
|
rc=0 Ohm
|
Resistance per contact.
|
|
84
|
rcw=0 Ohm
|
Width adjustment for contact resistance.
|
|
85
|
diblb=0
|
Bottom-gate dibl.
|
|
86
|
diblbl=0
|
diblb l dependence coefficient.
|
|
87
|
diblt=0
|
Top-gate dibl.
|
|
88
|
dibltl=0
|
diblt l dependence coefficient.
|
|
89
|
diblle=1
|
dibl l dependence exponent.
|
|
90
|
diblv=0.1 V
|
dibl voltage offset.
|
|
91
|
dible=0.5
|
dibl voltage exponent.
|
|
92
|
clm1=0
|
clm linear component.
|
|
93
|
clm1l=0
|
clm1 l dependence coefficient.
|
|
94
|
clm1le=1
|
clm1 l dependence exponent.
|
|
95
|
clm1c=0 /V
|
clm1 V(gx) dependence coefficient.
|
|
96
|
clm2=0
|
clm nonlinear component.
|
|
97
|
clm2l=0
|
clm2 l dependence coefficient.
|
|
98
|
clm2le=1
|
clm2 l dependence exponent.
|
|
99
|
clm2v=0.1 V
|
clm2 voltage offset.
|
|
100
|
clm2e=0.5
|
clm2 voltage exponent.
|
|
101
|
ats=0.0 V
|
Saturation smoothing parameter.
|
|
102
|
atso=0 V
|
ats geometry independent part.
|
|
103
|
atsl=0 V
|
ats 1/l coefficient.
|
|
104
|
axs=0
|
Second saturation smoothing parameter.
|
|
105
|
axso=0
|
axs geometry independent part.
|
|
106
|
axsl=0
|
axs 1/l coefficient.
|
|
107
|
nspo=1
|
Slope parameter under source pinch-off.
|
|
108
|
nspoo=1
|
nspo geometry independent part.
|
|
109
|
nspol=0
|
nspo 1/l coefficient.
|
|
110
|
nspole=1
|
nspo 1/l exponent.
|
|
111
|
nspow=0
|
nspo 1/w coefficient.
|
|
112
|
nspowe=1
|
nspo 1/w exponent.
|
|
113
|
nspolw=0
|
nspo 1/(l*w) coefficient.
|
|
114
|
alphab=0 /V
|
Bottom-gate impact ionization current prefactor.
|
|
115
|
alphabo=0 /V
|
alphab geometry independent part.
|
|
116
|
alphabl=0 /V
|
alphab 1/l coefficient.
|
|
117
|
alphat=0 /V
|
Top-gate impact ionization current prefactor.
|
|
118
|
alphato=0 /V
|
alphat geometry independent part.
|
|
119
|
alphatl=0 /V
|
alphat 1/l coefficient.
|
|
120
|
beta=10 V
|
Impact ionization current exponent for both gates.
|
|
121
|
mumb=0 /V
|
Bottom-gate mobility modulation coefficient.
|
|
122
|
mumboff=0 V
|
Bottom-gate mobility modulation voltage offset.
|
|
123
|
mumbs=1
|
Bottom-gate mobility modulation smoothing parameter.
|
|
124
|
mumbe=1
|
Bottom-gate mobility modulation exponent.
|
|
125
|
mumbo=0 /V
|
mumb geometry independent part.
|
|
126
|
mumbl=0
|
mumb 1/l coefficient.
|
|
127
|
mumbw=0
|
mumb 1/w coefficient.
|
|
128
|
mumblw=0
|
mumb 1/(l*w) coefficient.
|
|
129
|
mumt=0 /V
|
Top-gate mobility modulation coefficient.
|
|
130
|
mumtoff=0 V
|
Top-gate mobility modulation voltage offset.
|
|
131
|
mumts=1
|
Top-gate mobility modulation smoothing parameter.
|
|
132
|
mumte=1
|
Top-gate mobility modulation exponent.
|
|
133
|
mumto=0 /V
|
mumt geometry independent part.
|
|
134
|
mumtl=0
|
mumt 1/l coefficient.
|
|
135
|
mumtw=0
|
mumt 1/w coefficient.
|
|
136
|
mumtlw=0
|
mumt 1/(l*w) coefficient.
|
|
137
|
mumii1=0 /V^2
|
Linear impact ionization mobility modulation coefficient.
|
|
138
|
mumii2=0 /V^4
|
Quadratic impact ionization mobility modulation coefficient.
|
|
139
|
vcrit=4 V
|
Velocity saturation critical voltage.
|
|
140
|
ecrit=4e+06 V/m
|
Velocity saturation critical field.
|
|
141
|
vcorn=0.4 V
|
Velocity saturation corner voltage.
|
|
142
|
ecorn=4e+05 V/m
|
Velocity saturation corner field.
|
|
143
|
du=0.02
|
Mobility reduction at ecorn.
|
|
144
|
voffspo=0
|
Source pinchoff offset (number of nspo*phi_t).
|
|
145
|
moffspo=1
|
Source pinchoff smoothing factor.
|
|
146
|
gth=0 W/K
|
Thermal conductance.
|
|
147
|
gtho=0 W/K
|
gth geometry independent part.
|
|
148
|
gthp=0 W/K/m
|
gth perimeter component.
|
|
149
|
gtha=0 W/K/m2
|
gth area component.
|
|
150
|
gthc=0 W/K
|
gth contact component.
|
|
151
|
cth=0 s W/K
|
Thermal capacitance.
|
|
152
|
ctho=0 s W/K
|
cth geometry independent part.
|
|
153
|
cthp=0 s W/K/m
|
cth perimeter component.
|
|
154
|
ctha=0 s W/K/m2
|
cth area component.
|
|
155
|
cthc=0 s W/K
|
cth contact component.
|
|
156
|
fc=0.9
|
Ddepletion capacitance linearization factor.
|
|
157
|
isab=0 A/m2
|
Bottom-gate diode saturation current per unit area.
|
|
158
|
nab=1
|
Bottom-gate ideality factor for isa.
|
|
159
|
cab=0 F/m2
|
Bottom-gate fixed capacitance per unit area.
|
|
160
|
cjab=0 F/m2
|
Bottom-gate depletion capacitance per unit area.
|
|
161
|
pab=0.75 V
|
Bottom-gate built-in potential for cja.
|
|
162
|
mab=0.33
|
Bottom-gate grading coefficient for cja.
|
|
163
|
ajab=-0.5 V
|
Bottom-gate smoothing parameter for cja.
|
|
164
|
ispb=0 A/m
|
Bottom-gate diode saturation current per unit perimeter.
|
|
165
|
npb=1
|
Bottom-gate ideality factor for isp.
|
|
166
|
cpb=0 F/m
|
Bottom-gate fixed capacitance per unit perimeter.
|
|
167
|
cpb2=0 F/m
|
Bottom-gate fixed capacitance per unit perimeter (2nd component).
|
|
168
|
cjpb=0 F/m
|
Bottom-gate depletion capacitance per unit perimeter.
|
|
169
|
ppb=0.75 V
|
Bottom-gate built-in potential for cjp.
|
|
170
|
mpb=0.33
|
Bottom-gate grading coefficient for cjp.
|
|
171
|
ajpb=-0.5 V
|
Bottom-gate smoothing parameter for cjp.
|
|
172
|
ttb=0 s
|
Bottom-gate transit time for diffusion charge.
|
|
173
|
vbvb=0 V
|
Bottom-gate breakdown voltage.
|
|
174
|
nbvb=1
|
Bottom-gate ideality factor for breakdown current.
|
|
175
|
isat=0 A/m2
|
Top-gate diode saturation current per unit area.
|
|
176
|
nat=1
|
Top-gate ideality factor for isa.
|
|
177
|
cat=0 F/m2
|
Top-gate fixed capacitance per unit area.
|
|
178
|
cjat=0 F/m2
|
Top-gate depletion capacitance per unit area.
|
|
179
|
pat=0.75 V
|
Top-gate built-in potential for cja.
|
|
180
|
mat=0.33
|
Top-gate grading coefficient for cja.
|
|
181
|
ajat=-0.5 V
|
Top-gate smoothing parameter for cja.
|
|
182
|
ispt=0 A/m
|
Top-gate diode saturation current per unit perimeter.
|
|
183
|
npt=1
|
Top-gate ideality factor for isp.
|
|
184
|
cpt=0 F/m
|
Top-gate fixed capacitance per unit perimeter.
|
|
185
|
cpt2=0 F/m
|
Top-gate fixed capacitance per unit perimeter (2nd component).
|
|
186
|
cjpt=0 F/m
|
Top-gate depletion capacitance per unit perimeter.
|
|
187
|
ppt=0.75 V
|
Top-gate built-in potential for cjp.
|
|
188
|
mpt=0.33
|
Top-gate grading coefficient for cjp.
|
|
189
|
ajpt=-0.5 V
|
Top-gate smoothing parameter for cjp.
|
|
190
|
ttt=0 s
|
Top-gate transit time for diffusion charge.
|
|
191
|
vbvt=0 V
|
Top-gate breakdown voltage.
|
|
192
|
nbvt=1
|
Top-gate ideality factor for breakdown current.
|
|
193
|
ibv=1e-06 A
|
Current at breakdown.
|
|
194
|
kfn=0 m2
|
Flicker noise coefficient.
|
|
195
|
afn=2
|
Flicker noise current exponent.
|
|
196
|
bfn=1
|
Flicker noise 1/f exponent.
|
|
197
|
swfngeo=0
|
Switch for flicker noise geometry calculation: 0=drawn and 1=effective.
|
|
198
|
tc1psirb=0 /K
|
psirb linear TC.
|
|
199
|
tc2psirb=0 /K2
|
psirb quadratic TC.
|
|
200
|
tc1psirt=0 /K
|
psirt linear TC.
|
|
201
|
tc2psirt=0 /K2
|
psirt quadratic TC.
|
|
202
|
tc1=0 /K
|
Resistance linear TC.
|
|
203
|
tc2=0 /K2
|
Resistance quadratic TC.
|
|
204
|
tc1o=0 /K
|
tc1 geometry independent part.
|
|
205
|
tc2o=0 /K2
|
tc2 geometry independent part.
|
|
206
|
tc1w=0 m/K
|
tc1 1/w coefficient.
|
|
207
|
tc2w=0 m/K2
|
tc2 1/w coefficient.
|
|
208
|
tc1l=0 m/K
|
tc1 1/l coefficient.
|
|
209
|
tc2l=0 m/K2
|
tc2 1/l coefficient.
|
|
210
|
tc1lw=0 m2/K
|
tc1 1/(l*w) coefficient.
|
|
211
|
tc2lw=0 m2/K2
|
tc2 1/(l*w) coefficient.
|
|
212
|
tsl=0 /K
|
Slope of resistance change compared to temperature at low temperature.
|
|
213
|
tsh=0 /K
|
Slope of resistance change compared to temperature at high temperature.
|
|
214
|
tsct=100 degC
|
Critical temperature where resistance change slope goes from tsl to tsh.
|
|
215
|
tssm=10 degC
|
Resistance change slope smoothing parameter.
|
|
216
|
tslo=0 /K
|
tsl geometry independent part.
|
|
217
|
tsho=0 /K
|
tsh geometry independent part.
|
|
218
|
tscto=100 degC
|
tsct geometry independent part.
|
|
219
|
tssmo=10 degC
|
tssm geometry independent part.
|
|
220
|
tslw=0 m/K
|
tsl 1/w coefficient.
|
|
221
|
tshw=0 m/K
|
tsh 1/w coefficient.
|
|
222
|
tsctw=0 m degC
|
tsct 1/w coefficient.
|
|
223
|
tssmw=0 m degC
|
tssm 1/w coefficient.
|
|
224
|
tsll=0 m/K
|
tsl 1/l coefficient.
|
|
225
|
tshl=0 m/K
|
tsh 1/l coefficient.
|
|
226
|
tsctl=0 m degC
|
tsct 1/l coefficient.
|
|
227
|
tssml=0 m degC
|
tssm 1/l coefficient.
|
|
228
|
tsllw=0 m2/K
|
tsl 1/(l*w) coefficient.
|
|
229
|
tshlw=0 m2/K
|
tsh 1/(l*w) coefficient.
|
|
230
|
tsctlw=0 m2 degC
|
tsct 1/(l*w) coefficient.
|
|
231
|
tssmlw=0 m2 degC
|
tssm 1/(l*w) coefficient.
|
|
232
|
tc1rc=0 /K
|
Contact resistance linear TC.
|
|
233
|
tc2rc=0 /K2
|
Contact resistance quadratic TC.
|
|
234
|
xbeta=0
|
Exponent for impact ionization current exponent temperature dependence.
|
|
235
|
tegth=0
|
Thermal conductance temperature exponent.
|
|
236
|
xvsat=0
|
Exponent for saturation velocity temperature dependence.
|
|
237
|
xvsato=0
|
xvsat geometry independent part.
|
|
238
|
xvsatl=0
|
xvsat 1/l coefficient.
|
|
239
|
xvsatle=1
|
xvsat 1/l exponent.
|
|
240
|
ea=1.12 V
|
Activation voltage for diode temperature dependence.
|
|
241
|
xis=3
|
Exponent for diode temperature dependence.
|
|
242
|
tc1vbvb=0 /K
|
Breakdown voltage linear TC (bottom gate).
|
|
243
|
tc2vbvb=0 /K2
|
Breakdown voltage quadratic TC (bottom gate).
|
|
244
|
tc1nbvb=0 /K
|
Breakdown ideality factor linear TC (bottom gate).
|
|
245
|
tc1vbvt=0 /K
|
Breakdown voltage linear TC (top gate).
|
|
246
|
tc2vbvt=0 /K2
|
Breakdown voltage quadratic TC (top gate).
|
|
247
|
tc1nbvt=0 /K
|
Breakdown ideality factor linear TC (top gate).
|
|
248
|
tc1kfn=0 /K
|
Flicker noise coefficient linear TC.
|
|
249
|
nsig_rsh=0
|
Number of standard deviations of global variation for rsh.
|
|
250
|
nsig_w=0
|
Number of standard deviations of global variation for w.
|
|
251
|
nsig_l=0
|
Number of standard deviations of global variation for l.
|
|
252
|
sig_rsh=0 %
|
Global variation standard deviation for rsh (relative).
|
|
253
|
sig_w=0 m
|
Global variation standard deviation for w (absolute).
|
|
254
|
sig_l=0 m
|
Global variation standard deviation for l (absolute).
|
|
255
|
smm_rsh=0 %m
|
Local variation standard deviation for rsh (relative).
|
|
256
|
smm_w=0 m^1.5
|
Local variation standard deviation for w (absolute).
|
|
257
|
smm_l=0 m^1.5
|
Local variation standard deviation for l (absolute).
|
|
258
|
swmmgdep=0
|
Switch for mismatch geometry calculation: 0=drawn and 1=effective.
|
|
259
|
swnoise=1
|
Switch to include noise: 0=no and 1=yes.
|
|
260
|
swet=1
|
Switch to include self-heating: 0=no and 1=yes.
|
|
261
|
swlin=0
|
Switch to force linearity: 0=no and 1=yes.
|
|
262
|
swmman=0
|
Switch to enable mismatch analysis: 0=no and 1=yes.
|
|
263
|
tref (degC)
|
Alias of tnom.
|
|
264
|
tr (degC)
|
Alias of tnom.
|
|
265
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
|
|
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating Point Parameters
|
1
|
jtype
|
JFET type: +1=n-body and -1=p-body.
|
|
2
|
leff_m (m
|
Effective electrical length.
|
|
3
|
weff_m (m)
|
Effective electrical width.
|
|
4
|
rth (K/W)
|
Thermal resistance at ambient temperature.
|
|
5
|
cth_i (s W/K)
|
Thermal capacitance.
|
|
6
|
v (V)
|
Voltage across JFET.
|
|
7
|
ids (A)
|
Current through JFET body.
|
|
8
|
r_dc (Ω)
|
DC resistance (including bias and temperature dependence).
|
|
9
|
r_ac (Ω)
|
AC resistance (including bias and temperature dependence).
|
|
10
|
cgbs (F)
|
Bottom-gate to source capacitance.
|
|
11
|
cgbd (F)
|
Bottom-gate to drain capacitance.
|
|
12
|
cgts (F)
|
Top-gate to source capacitance.
|
|
13
|
cgtd (F)
|
Top-gate to drain capacitance.
|
|
14
|
vsp (V)
|
Source voltage difference w.r.t. to pinch-off.
|
|
15
|
vdsat (V)
|
Drain-source saturation voltage.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description of that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Cgbd OP-11
|
diblt M-87
|
nspolw M-113
|
tc1psirb M-198
|
|
Cgbs OP-10
|
dibltl M-88
|
nspoo M-108
|
tc1psirt M-200
|
|
Cgtd OP-13
|
diblv M-90
|
nspow M-111
|
tc1rc M-232
|
|
Cgts OP-12
|
dta I-19
|
nspowe M-112
|
tc1vbvb M-242
|
|
Ids OP-7
|
dtemp I-20
|
nt M-41
|
tc1vbvt M-245
|
|
Vdsat OP-15
|
du M-143
|
nwxw M-29
|
tc1w M-206
|
|
Vsp OP-14
|
dxlsat M-35
|
pab M-161
|
tc2 M-203
|
|
adb I-11
|
ea M-240
|
paramchk M-2
|
tc2l M-209
|
|
adt I-12
|
ecorn M-142
|
pat M-179
|
tc2lw M-211
|
|
afn M-195
|
ecrit M-140
|
pdb I-13
|
tc2o M-205
|
|
ajab M-163
|
fc M-156
|
pdb2 I-14
|
tc2psirb M-199
|
|
ajat M-181
|
fdrwo M-31
|
pdt I-15
|
tc2psirt M-201
|
|
ajpb M-171
|
fdxwo M-32
|
pdt2 I-16
|
tc2rc M-233
|
|
ajpt M-189
|
gmin M-8
|
ppb M-169
|
tc2vbvb M-243
|
|
alphab M-114
|
grpo M-27
|
ppt M-187
|
tc2vbvt M-246
|
|
alphabl M-116
|
gth M-146
|
psb I-6
|
tc2w M-207
|
|
alphabo M-115
|
gtha M-149
|
psb2 I-7
|
tegth M-235
|
|
alphat M-117
|
gthc M-150
|
psirb M-52
|
tempeff O-1
|
|
alphatl M-119
|
gtho M-147
|
psirbfac M-59
|
tm M-36
|
|
alphato M-118
|
gthp M-148
|
psirbl M-54
|
tmax M-7
|
|
asb I-4
|
ibv M-193
|
psirble M-55
|
tmaxclip M-26
|
|
ast I-5
|
imax M-9
|
psirblw M-58
|
tmin M-6
|
|
ats M-101
|
isab M-157
|
psirbo M-53
|
tminclip M-25
|
|
atsl M-103
|
isat M-175
|
psirbw M-56
|
tnom M-18
|
|
atso M-102
|
ispb M-164
|
psirbwe M-57
|
toxb M-39
|
|
axs M-104
|
ispt M-182
|
psirt M-68
|
toxt M-42
|
|
axsl M-106
|
jmax M-23
|
psirtfac M-75
|
tr M-264
|
|
axso M-105
|
jtype OP-1
|
psirtl M-70
|
tref M-263
|
|
beta M-120
|
kfn M-194
|
psirtle M-71
|
trise I-18
|
|
bfn M-196
|
l I-2
|
psirtlw M-74
|
tsct M-214
|
|
cab M-159
|
leff_m OP-2
|
psirto M-69
|
tsctl M-226
|
|
cat M-177
|
level M-1
|
psirtw M-72
|
tsctlw M-230
|
|
cd I-17
|
lmax M-20
|
psirtwe M-73
|
tscto M-218
|
|
cjab M-160
|
lmin M-19
|
pst I-8
|
tsctw M-222
|
|
cjat M-178
|
m I-29
|
pst2 I-9
|
tsh M-213
|
|
cjpb M-168
|
mab M-162
|
r0 M-77
|
tshl M-225
|
|
cjpt M-186
|
mat M-180
|
r_ac OP-9
|
tshlw M-229
|
|
clm1 M-92
|
meff O-2
|
r_dc OP-8
|
tsho M-217
|
|
clm1c M-95
|
moffspo M-145
|
rc M-83
|
tshw M-221
|
|
clm1l M-93
|
mpb M-170
|
rcd M-82
|
tsl M-212
|
|
clm1le M-94
|
mpt M-188
|
rcs M-81
|
tsll M-224
|
|
clm2 M-96
|
mu0 M-76
|
rcw M-84
|
tsllw M-228
|
|
clm2e M-100
|
mult I-24
|
revision M-5
|
tslo M-216
|
|
clm2l M-97
|
mumb M-121
|
rsh0 M-78
|
tslw M-220
|
|
clm2le M-98
|
mumbe M-124
|
rshzd M-80
|
tssm M-215
|
|
clm2v M-99
|
mumbl M-126
|
rth OP-4
|
tssml M-227
|
|
compatible M-265
|
mumblw M-128
|
rthresh M-12
|
tssmlw M-231
|
|
cpb M-166
|
mumbo M-125
|
rzd M-79
|
tssmo M-219
|
|
cpb2 M-167
|
mumboff M-122
|
scale M-10
|
tssmw M-223
|
|
cpt M-184
|
mumbs M-123
|
shrink M-11
|
ttb M-172
|
|
cpt2 M-185
|
mumbw M-127
|
sig_l M-254
|
ttt M-190
|
|
cs I-10
|
mumii1 M-137
|
sig_rsh M-252
|
type M-13
|
|
cth M-151
|
mumii2 M-138
|
sig_w M-253
|
v OP-6
|
|
cth_i OP-5
|
mumt M-129
|
smm_l M-257
|
vbvb M-173
|
|
ctha M-154
|
mumte M-132
|
smm_rsh M-255
|
vbvt M-191
|
|
cthc M-155
|
mumtl M-134
|
smm_w M-256
|
vcorn M-141
|
|
ctho M-152
|
mumtlw M-136
|
subversion M-4
|
vcrit M-139
|
|
cthp M-153
|
mumto M-133
|
swbgmos M-14
|
version M-3
|
|
dfb M-44
|
mumtoff M-130
|
swet I-26
|
vfbb M-40
|
|
dfbfac M-51
|
mumts M-131
|
swet M-260
|
vfbt M-43
|
|
dfbl M-46
|
mumtw M-135
|
swfngeo M-197
|
vmax M-24
|
|
dfble M-47
|
nab M-158
|
swgdep M-17
|
voffspo M-144
|
|
dfblw M-50
|
nat M-176
|
swgeo M-16
|
w I-1
|
|
dfbo M-45
|
nb M-38
|
swlin I-27
|
wd I-3
|
|
dfbw M-48
|
nbvb M-174
|
swlin M-261
|
weff_m OP-3
|
|
dfbwe M-49
|
nbvt M-192
|
swmman I-28
|
wexw M-30
|
|
dft M-60
|
nc M-37
|
swmman M-262
|
wmax M-22
|
|
dftfac M-67
|
npb M-165
|
swmmgdep M-258
|
wmin M-21
|
|
dftl M-62
|
npt M-183
|
swnoise I-25
|
xbeta M-234
|
|
dftle M-63
|
nsig_l M-251
|
swnoise M-259
|
xis M-241
|
|
dftlw M-66
|
nsig_rsh M-249
|
swtgmos M-15
|
xl M-33
|
|
dfto M-61
|
nsig_w M-250
|
tc1 M-202
|
xlw M-34
|
|
dftw M-64
|
nsmm_l I-23
|
tc1kfn M-248
|
xvsat M-236
|
|
dftwe M-65
|
nsmm_rsh I-21
|
tc1l M-208
|
xvsatl M-238
|
|
diblb M-85
|
nsmm_w I-22
|
tc1lw M-210
|
xvsatle M-239
|
|
diblbl M-86
|
nspo M-107
|
tc1nbvb M-244
|
xvsato M-237
|
|
dible M-91
|
nspol M-109
|
tc1nbvt M-247
|
xw M-28
|
|
diblle M-89
|
nspole M-110
|
tc1o M-204
|
|
Long Channel JFET/MOSFET Model (mos30)
This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.95) as MOS model, level 30 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.
Note: In noise analysis, mos30 instances will not generate any contribution, since there are no noise sources included in the mos30 model.
Warning: Dont use this model. It is obsolete.
Mos30 will be removed from spectre in the next release.
(c) Philips Electronics N.V. 1993, 1994, 1996
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement
mn30 (1 2 0 0) nchmod area=2 mult=1
Sample Model Statement
model nchmod mos30 type=n tox=1.1e-5 ron=150 rsat=500 psat=2 vsat=1 vsub=0.59 cgate=1.65e-12 csub=1.1e-9 tref=25
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
area=1
|
Alias of mult.
|
|
3
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
|
|
4
|
m=1
|
Multiplicity factor.
|
Model Definition
model modelName mos30 parameter=value ...
Model Parameters
|
1
|
type=n
|
Transistor gender. Possible values are n or p.
|
|
2
|
ron=1.0 Ω
|
Ohmic resistance at zero bias.
|
|
3
|
rsat=1.0 Ω
|
Space charge resistance at zero bias.
|
|
4
|
vsat=10.0 V
|
Critical drain-source voltage for hot carriers.
|
|
5
|
psat=1.0
|
Velocity saturation coefficient.
|
|
6
|
vp=-1.0 V
|
Pinch off voltage at zero gate and substrate voltages.
|
|
7
|
tox=-1.0 cm
|
Gate oxide thickness.
|
|
8
|
dch=1.0e15 cm-3
|
Doping level channel.
|
|
9
|
dsub=1.0e15 cm-3
|
Doping level substrate.
|
|
10
|
vsub=0.6 V
|
Substrate diffusion voltage.
|
|
11
|
vgap=1.2 V
|
Bandgap voltage channel.
|
|
12
|
cgate=0.0 F
|
Gate capacitance at zero bias.
|
|
13
|
csub=0.0 F
|
Substrate capacitance at zero bias.
|
|
14
|
tausc=0.0 s
|
Space charge transit time of the channel.
|
|
15
|
ach=0.0
|
Temperature coefficient resistivity of the channel.
|
|
16
|
kf=0.0
|
Flickernoise coefficient.
|
|
17
|
af=1.0
|
Flickernoise exponent.
|
|
18
|
tr (C)
|
Reference temperature. Default set by option tnom.
|
|
19
|
tref (C)
|
Alias of tr. Default set by option tnom.
|
|
20
|
tnom (C)
|
Alias of tr. Default set by option tnom.
|
|
21
|
dta=0.0 K
|
Temperature offset of the device.
|
|
22
|
trise=0.0 K
|
Alias of dta.
|
Output Parameters
|
1
|
ront (Ω)
|
Ohmic resistance at zero bias.
|
|
2
|
rsat (Ω)
|
Space charge resistance at zero bias.
|
|
3
|
vsatt (V)
|
Critical drain-source voltage for hot carriers.
|
|
4
|
vsubt (V)
|
Substrate diffusion voltage.
|
|
5
|
cgate (F)
|
Gate capacitance at zero bias.
|
|
6
|
csubt (F)
|
Substrate capacitance at zero bias.
|
Operating-Point Parameters
|
1
|
pwr (W)
|
Power.
|
|
2
|
ids (A)
|
Total current including velocity saturation.
|
|
3
|
qb (Coul)
|
Substrate charge.
|
|
4
|
qg (Coul)
|
Gate charge.
|
|
5
|
qds (Coul)
|
Space charge in the channel.
|
|
6
|
gdsd (S)
|
Conductance (d ids / d vd).
|
|
7
|
gdsg (S)
|
Conductance (d ids / d vg).
|
|
8
|
gdss (S)
|
Conductance (d ids / d vs).
|
|
9
|
gdsb (S)
|
Conductance (d ids / d vb).
|
|
10
|
cbd (F)
|
Capacitance (d qb / d vd).
|
|
11
|
cbg (F)
|
Capacitance (d qb / d vg).
|
|
12
|
cbs (F)
|
Capacitance (d qb / d vs).
|
|
13
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
14
|
cgd (F)
|
Capacitance (d qg / d vd).
|
|
15
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
16
|
cgs (F)
|
Capacitance (d qg / d vs).
|
|
17
|
cgb (F)
|
Capacitance (d qg / d vb).
|
|
18
|
cdsd (F)
|
Capacitance (d qds / d vd).
|
|
19
|
cdsg (F)
|
Capacitance (d qds / d vg).
|
|
20
|
cdss (F)
|
Capacitance (d qds / d vs).
|
|
21
|
cdsb (F)
|
Capacitance (d qds / d vb).
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
ach M-15
|
cgd OP-14
|
m I-4
|
tox M-7
|
af M-17
|
cgg OP-15
|
mult I-1
|
tr M-18
|
area I-2
|
cgs OP-16
|
psat M-5
|
tref M-19
|
cbb OP-13
|
csub M-13
|
pwr OP-1
|
trise M-22
|
cbd OP-10
|
csubt O-6
|
qb OP-3
|
type M-1
|
cbg OP-11
|
dch M-8
|
qds OP-5
|
vgap M-11
|
cbs OP-12
|
dsub M-9
|
qg OP-4
|
vp M-6
|
cdsb OP-21
|
dta M-21
|
region I-3
|
vsat M-4
|
cdsd OP-18
|
gdsb OP-9
|
ron M-2
|
vsatt O-3
|
cdsg OP-19
|
gdsd OP-6
|
ront O-1
|
vsub M-10
|
cdss OP-20
|
gdsg OP-7
|
rsat M-3
|
vsubt O-4
|
cgate M-12
|
gdss OP-8
|
rsat O-2
|
|
cgate O-5
|
ids OP-2
|
tausc M-14
|
|
cgb OP-17
|
kf M-16
|
tnom M-20
|
|
MOS Model 40, Level 40 (mos40t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
Model Definition
model modelName mos40t parameter=value ...
Model Parameters
|
1
|
level=40
|
Level of this model.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
vbdblow=0 V
|
Low limit of drain-bulk voltage
|
|
6
|
vbdbhigh=0 V
|
High limit of drain-bulk voltage.
|
|
7
|
vbsblow=0 V
|
Low limit of source-bulk voltage.
|
|
8
|
vbsbhigh=0 V
|
High limit of source-bulk voltage.
|
|
9
|
vballmsg=1
|
All ovcheck messages if set to 1.
|
|
10
|
tmin=0 s
|
Ovcheck tmin value.
|
|
11
|
tdelay=0 s
|
Stop simulation on overvoltage when STOP==1.
|
|
12
|
stop=0
|
Ohmic resistance at zero bias.
|
|
13
|
ron=1 Ω
|
Ohmic resistance at zero bias.
|
|
14
|
rsat=1 Ω
|
Space charge resistance at zero bias.
|
|
15
|
vsat=10 V
|
Critical drain-source voltage for hot carriers.
|
|
16
|
psat=1
|
Velocity saturation coefficient.
|
|
17
|
vp=-1 V
|
Pinch off voltage at zero gate and substrate voltages.
|
|
18
|
tox=-1 m
|
Gate oxide thickness.
|
|
19
|
dch=1e+21 m-3
|
Doping level channel.
|
|
20
|
tbox=-1 m-3
|
Box oxide thickness.
|
|
21
|
cgate=0 F
|
Gate capacitance at zero bias.
|
|
22
|
cbox=0 F
|
Wafer capacitance.
|
|
23
|
tausc=0 s
|
Space charge transit time of the channel.
|
|
24
|
ach=0
|
Temperature coefficient resistivity of the channel.
|
|
25
|
achmod=0
|
Parameter to switch to extended temperature scaling.
|
|
26
|
achron=0
|
Temperature coefficient of ohmic resistance at zero bias.
|
|
27
|
achvsat=0
|
Temperature coefficient of critical drain-source voltage for hot carriers.
|
|
28
|
achrsat=0
|
Temperature coefficient of space charge resistance at zero bias.
|
|
29
|
tref=25 C
|
Reference temperature.
|
|
30
|
dta=0 K
|
Temperature offset of the device.
|
|
31
|
rth=300 K/W
|
Thermal resistance.
|
|
32
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
33
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
34
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
35
|
tnom (C)
|
Alias of tnom.
|
|
36
|
tr (C)
|
Alias of tnom.
|
|
37
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain source current.
|
|
2
|
vds (V)
|
Drain source voltage.
|
|
3
|
vgs (V)
|
Gate source voltage.
|
|
4
|
vbs (V)
|
Bulk source voltage.
|
|
5
|
vp (V)
|
Channel pinch-off voltage.
|
|
6
|
gm (A/V)
|
Transconductance.
|
|
7
|
gmb (A/V)
|
Bulk transconductance.
|
|
8
|
gds (A/V)
|
Output conductance.
|
|
9
|
qg (C)
|
Gate charge.
|
|
10
|
cgd (F)
|
Gate charge dependence on drain voltage.
|
|
11
|
cgg (F)
|
Gate charge dependence on gate voltage.
|
|
12
|
cgs (F)
|
Gate charge dependence on substrate voltage.
|
|
13
|
cgb (F)
|
Gate charge dependence on bulk voltage.
|
|
14
|
qb (C)
|
Bulk charge.
|
|
15
|
cbd (F)
|
Bulk charge dependence on drain voltage.
|
|
16
|
cbg (F)
|
Bulk charge dependence on gate voltage.
|
|
17
|
cbs (F)
|
Bulk charge dependence on substrate voltage.
|
|
18
|
cbb (F)
|
Bulk charge dependence on bulk voltage.
|
|
19
|
qd (C)
|
Drain charge.
|
|
20
|
cdd (F)
|
Drain charge dependence on drain voltage (dQd/dVd).
|
|
21
|
cdg (F)
|
Drain charge dependence on gate voltage (-dQd/dVg).
|
|
22
|
cds (F)
|
Drain charge dependence on source voltage (-dQd/dVs).
|
|
23
|
cdb (F)
|
Drain charge dependence on bulk voltage (-dQd/dVb).
|
|
24
|
qs (C)
|
Source charge.
|
|
25
|
csd (F)
|
Source charge dependence on drain voltage (-dQs/dVd).
|
|
26
|
csg (F)
|
Source charge dependence on gate voltage (-dQs/dVg).
|
|
27
|
css (F)
|
Source charge dependence on source voltage (dQs/dVs).
|
|
28
|
csb (F)
|
Source charge dependence on bulk voltage (-dQs/dVb).
|
|
29
|
u
|
Transistor gain.
|
|
30
|
rout (Ω)
|
Small-signal output resistance.
|
|
31
|
vearly (V)
|
Equivelant early voltage.
|
|
32
|
iohm (A)
|
Drain source current excluding velocity saturation.
|
|
33
|
ihc (A)
|
Critical current for velocity saturation.
|
|
34
|
Pdiss (W)
|
Dissipation.
|
|
35
|
TK (K)
|
Actual temperature.
|
|
36
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
37
|
pwr (W)
|
Power.
|
|
38
|
mos_region
|
MOS region. Possible values are off, sat, triode, and subth.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-34
|
cgs OP-12
|
paramchk M-2
|
tr M-36
|
|
TK OP-35
|
compatible M-37
|
printscaled I-2
|
tref M-29
|
|
ach M-24
|
csb OP-28
|
psat M-16
|
trise I-3
|
|
achmod M-25
|
csd OP-25
|
pwr OP-37
|
type M-34
|
|
achron M-26
|
csg OP-26
|
qb OP-14
|
u OP-29
|
|
achrsat M-28
|
css OP-27
|
qd OP-19
|
vballmsg M-9
|
|
achvsat M-27
|
cth M-32
|
qg OP-9
|
vbdbhigh M-6
|
|
ath M-33
|
ctype OP-36
|
qs OP-24
|
vbdblow M-5
|
|
cbb OP-18
|
dch M-19
|
region I-4
|
vbds M-4
|
|
cbd OP-15
|
dta M-30
|
ron M-13
|
vbox M-3
|
|
cbg OP-16
|
gds OP-8
|
rout OP-30
|
vbs OP-4
|
|
cbox M-22
|
gm OP-6
|
rsat M-14
|
vbsbhigh M-8
|
|
cbs OP-17
|
gmb OP-7
|
rth M-31
|
vbsblow M-7
|
|
cdb OP-23
|
ids OP-1
|
stop M-12
|
vds OP-2
|
|
cdd OP-20
|
ihc OP-33
|
tausc M-23
|
vearly OP-31
|
|
cdg OP-21
|
iohm OP-32
|
tbox M-20
|
vgs OP-3
|
|
cds OP-22
|
level M-1
|
tdelay M-11
|
vp M-17
|
|
cgate M-21
|
m I-5
|
tempeff O-1
|
vp OP-5
|
|
cgb OP-13
|
meff O-2
|
tmin M-10
|
vsat M-15
|
|
cgd OP-10
|
mos_region OP-38
|
tnom M-35
|
|
|
cgg OP-11
|
mult I-1
|
tox M-18
|
|
Long Channel JFET/MOSFET Model (mos3002)
This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.98) as MOS model, level 3002 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.
Note: In noise analysis, mos3002 instances will not generate any contribution, since there are no noise sources included in the mos3002 model.
(c) Philips Electronics N.V. 1993, 1994, 1996, 1998
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement
mn3 (1 2 0 0) nch3002 area=1 m=2
Sample Model Statement
model nch3002 mos3002 ron=20 rsat=150 vsat=1 tox=1.23e-5 dch=1.1e16 vsub=0.58 csub=5.43e-13 tausc=1.2e-12 kf=1 tref=27 psat=1 dta=0
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
area=1
|
Alias of mult.
|
|
3
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
|
|
4
|
m=1
|
Multiplicity factor.
|
Model Definition
model modelName mos3002 parameter=value ...
Model Parameters
|
1
|
type=n
|
Transistor gender. Possible values are n or p.
|
|
2
|
ron=1.0 Ω
|
Ohmic resistance at zero bias.
|
|
3
|
rsat=1.0 Ω
|
Space charge resistance at zero bias.
|
|
4
|
vsat=10.0 V
|
Critical drain-source voltage for hot carriers.
|
|
5
|
psat=1.0
|
Velocity saturation coefficient.
|
|
6
|
vp=-1.0 V
|
Pinch off voltage at zero gate and substrate voltages.
|
|
7
|
tox=-1.0 cm
|
Gate oxide thickness.
|
|
8
|
dch=1.0e15 cm-3
|
Doping level channel.
|
|
9
|
dsub=1.0e15 cm-3
|
Doping level substrate.
|
|
10
|
vsub=0.6 V
|
Substrate diffusion voltage.
|
|
11
|
vgap=1.2 V
|
Band gap voltage channel.
|
|
12
|
cgate=0.0 F
|
Gate capacitance at zero bias.
|
|
13
|
csub=0.0 F
|
Substrate capacitance at zero bias.
|
|
14
|
tausc=0.0 s
|
Space charge transit time of the channel.
|
|
15
|
ach=0.0
|
Temperature coefficient resistivity of the channel.
|
|
16
|
kf=0.0
|
Flickernoise coefficient.
|
|
17
|
af=1.0
|
Flickernoise exponent.
|
|
18
|
tr (C)
|
Reference temperature. Default set by option tnom.
|
|
19
|
tref (C)
|
Alias of tr. Default set by option tnom.
|
|
20
|
tnom (C)
|
Alias of tr. Default set by option tnom.
|
|
21
|
dta=0.0 K
|
Temperature offset of the device.
|
|
22
|
trise=0.0 K
|
Alias of dta.
|
Output Parameters
|
1
|
ront (Ω)
|
Ohmic resistance at zero bias.
|
|
2
|
rsat (Ω)
|
Space charge resistance at zero bias.
|
|
3
|
vsatt (V)
|
Critical drain-source voltage for hot carriers.
|
|
4
|
vsubt (V)
|
Substrate diffusion voltage.
|
|
5
|
cgate (F)
|
Gate capacitance at zero bias.
|
|
6
|
csubt (F)
|
Substrate capacitance at zero bias.
|
Operating-Point Parameters
|
1
|
pwr (W)
|
Power.
|
|
2
|
ids (A)
|
Total current including velocity saturation.
|
|
3
|
qb (Coul)
|
Substrate charge.
|
|
4
|
qg (Coul)
|
Gate charge.
|
|
5
|
qds (Coul)
|
Space charge in the channel.
|
|
6
|
gdsd (S)
|
Conductance (d ids / d vd).
|
|
7
|
gdsg (S)
|
Conductance (d ids / d vg).
|
|
8
|
gdss (S)
|
Conductance (d ids / d vs).
|
|
9
|
gdsb (S)
|
Conductance (d ids / d vb).
|
|
10
|
cbd (F)
|
Capacitance (d qb / d vd).
|
|
11
|
cbg (F)
|
Capacitance (d qb / d vg).
|
|
12
|
cbs (F)
|
Capacitance (d qb / d vs).
|
|
13
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
14
|
cgd (F)
|
Capacitance (d qg / d vd).
|
|
15
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
16
|
cgs (F)
|
Capacitance (d qg / d vs).
|
|
17
|
cgb (F)
|
Capacitance (d qg / d vb).
|
|
18
|
cdsd (F)
|
Capacitance (d qds / d vd).
|
|
19
|
cdsg (F)
|
Capacitance (d qds / d vg).
|
|
20
|
cdss (F)
|
Capacitance (d qds / d vs).
|
|
21
|
cdsb (F)
|
Capacitance (d qds / d vb).
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
ach M-15
|
cgd OP-14
|
m I-4
|
tox M-7
|
af M-17
|
cgg OP-15
|
mult I-1
|
tr M-18
|
area I-2
|
cgs OP-16
|
psat M-5
|
tref M-19
|
cbb OP-13
|
csub M-13
|
pwr OP-1
|
trise M-22
|
cbd OP-10
|
csubt O-6
|
qb OP-3
|
type M-1
|
cbg OP-11
|
dch M-8
|
qds OP-5
|
vgap M-11
|
cbs OP-12
|
dsub M-9
|
qg OP-4
|
vp M-6
|
cdsb OP-21
|
dta M-21
|
region I-3
|
vsat M-4
|
cdsd OP-18
|
gdsb OP-9
|
ron M-2
|
vsatt O-3
|
cdsg OP-19
|
gdsd OP-6
|
ront O-1
|
vsub M-10
|
cdss OP-20
|
gdsg OP-7
|
rsat M-3
|
vsubt O-4
|
cgate M-12
|
gdss OP-8
|
rsat O-2
|
|
cgate O-5
|
ids OP-2
|
tausc M-14
|
|
cgb OP-17
|
kf M-16
|
tnom M-20
|
|
Compact MOS-Transistor Model (mos705)
The mos705 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Dec.93) as MOS model, level 705.
(c) Philips Electronics N.V. 1993, 1994
In extension to the model book description a minimum conductance gmin is inserted between the drain and source node, to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement:
mn1 (1 2 0 0) mna7 ln=120e-6 wn=12e-6
Sample Model Statement:
model mna7 mos705 type=n vtn=0.853 betan=77e-6 tox=15e-9 vfb=-850e-3 tref=25 subthn=3 phi=0.645 lap=100e-9 gkn=-350e-9 th1n=0.15 th2n=0.046 th3n=0.1 fnoise=1e-10
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
wn=1.0 scale m
|
Drawn channel width in the lay-out of the actual transistor. Scale set by option scale.
|
|
2
|
ln=1.0 scale m
|
Drawn channel length in the lay-out of the actual transistor. Scale set by option scale.
|
|
3
|
w=1.0 scale m
|
Alias for wn.
|
|
4
|
l=1.0 scale m
|
Alias for ln.
|
|
5
|
mult=1
|
Number of devices in parallel.
|
|
6
|
area=1
|
Alias of mult.
|
|
7
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
|
|
8
|
m=1
|
Multiplicity factor.
|
|
9
|
trise=0 K
|
Temperature rise from ambient.
|
Model Definition
model modelName mos705 parameter=value ...
Model Parameters
|
1
|
type=n
|
Transistor gender. Possible values are n or p.
|
|
2
|
vtn=0 V
|
Threshold voltage of the reference transistor at the reference temperature.
|
|
3
|
kon=0 √V
|
Ko of the reference transistor.
|
|
4
|
kn=100m √V
|
K of the reference transistor.
|
|
5
|
vsbxn=0 V
|
Vsbx of the reference transistor.
|
|
6
|
delvx=0 V
|
Dvsbx of the reference transistor.
|
|
7
|
th1n=0 1/V
|
The1 of the reference transistor.
|
|
8
|
th2n=0 1/√V
|
The2 of the reference transistor.
|
|
9
|
th3n=0 1/V
|
The3 of the reference transistor at the reference temperature.
|
|
10
|
gamman=0
|
Gam of the reference transistor.
|
|
11
|
shiftn=0 V^(1-n)
|
Sh of the reference transistor.
|
|
12
|
nn=0
|
N of the reference transistor.
|
|
13
|
pn=0 1/V
|
P of the reference transistor.
|
|
14
|
ava=0
|
A of the reference transistor.
|
|
15
|
avb=1 V
|
B of the reference transistor.
|
|
16
|
avc=0
|
C of the reference transistor.
|
|
17
|
wref=100u m
|
Effective width of the reference transistor.
|
|
18
|
wtol=0 m
|
Difference between drawn and effective gate width.
|
|
19
|
dvtn=0 V m
|
Narrow-width factor of the threshold voltage at vsbref.
|
|
20
|
dkon=0 √v m
|
Narrow-width factor of ko.
|
|
21
|
dkn=0 √v m
|
Narrow-width factor of k.
|
|
22
|
dvsbxn=0 V m
|
Narrow-width factor of vsbx.
|
|
23
|
ddelvx=0 Vm
|
Narrow-width factor of dvsbx.
|
|
24
|
betan=20u A/V2
|
Gain factor of a infinite-square transistor at the reference temperature.
|
|
25
|
dth1n=0 m/V
|
Narrow-width factor of the1.
|
|
26
|
dth2n=0 m/√V
|
Narrow-width factor of the2.
|
|
27
|
dth3n=0 m/V
|
Narrow-width factor of the3.
|
|
28
|
dgamn=0 m
|
Narrow-width factor of gam.
|
|
29
|
dava=0 m
|
Narrow-width factor of a.
|
|
30
|
davb=0 V m
|
Narrow-width factor of b.
|
|
31
|
davc=0 m
|
Narrow-width factor of c.
|
|
32
|
lref=100u m
|
Effective length of the reference transistor.
|
|
33
|
ltol=0 m
|
Difference between drawn and actual gate polysilicon length.
|
|
34
|
gvtn=0 V m
|
Short-channel factor of the threshold voltage at vsbref.
|
|
35
|
gkon=0 √V m
|
Short-channel factor of ko.
|
|
36
|
gkn=0 √V m
|
Short-channel factor of k.
|
|
37
|
gvsbxn=0 V m
|
Short-channel factor of vsbx.
|
|
38
|
gdelvx=0 V m
|
Short-channel factor of dvsbx.
|
|
39
|
gth1n=0 m/V
|
Short-channel factor of the1.
|
|
40
|
gth2n=0 m/√V
|
Short-channel factor of the2.
|
|
41
|
gth3n=0 m/V
|
Short-channel factor of the3.
|
|
42
|
ggamn=0 m
|
Short-channel factor of gam.
|
|
43
|
gshift=0 V^(1-n) m2
|
|
|
|
|
Short-channel factor of sh.
|
|
44
|
gnn=0 m
|
Short-channel factor of n.
|
|
45
|
gpn=0 m/V
|
Short-channel factor of p.
|
|
46
|
gava=0 m
|
Short-channel factor of a.
|
|
47
|
gavb=0 V m
|
Short-channel factor of b.
|
|
48
|
gavc=0 m
|
Short-channel factor of c.
|
|
49
|
lap=0 m
|
Half of the effective channel-length reduction due to lateral diffusion.
|
|
50
|
vsbref=0 V
|
Source to bulk reference voltage for parameter determination.
|
|
51
|
phi=600m V
|
Diffusion potential at the reference temperature.
|
|
52
|
tcvt=-1m V/K
|
Temperature coefficient of vto.
|
|
53
|
tbetan=1.5
|
Power temperature coefficient of bet.
|
|
54
|
tth3n=0 1/(V K)
|
Temperature coefficient of the3.
|
|
55
|
tgth3n=0 m/(V K)
|
Temperature coefficient of the length dependence of the3.
|
|
56
|
m=1.0
|
Subthreshold-slope factor at reference back bias and at the reference temperature.
|
|
57
|
subthn=0
|
Weak-inversion factor.
|
|
58
|
vtr=0 V
|
Depletion-MOS-transistor-transition voltage.
|
|
59
|
ratio=0
|
Depletion-MOS-transistor-gain ratio.
|
|
60
|
vfb=0 V
|
Flat-band voltage.
|
|
61
|
tox=100n m
|
Gate-oxide thickness.
|
|
62
|
col=0 F/m
|
Gate/drain or gate/source overlap capacitance per unit length.
|
|
63
|
fnoise=0 m2 V2
|
Flicker-noise factor.
|
|
64
|
tnoise=0
|
Thermal-noise factor.
|
Temperature parameters
|
65
|
tr (C)
|
Reference temperature. Default set by option tnom.
|
|
66
|
tref (C)
|
Alias of tr. Default set by option tnom.
|
|
67
|
tnom (C)
|
Alias of tr. Default set by option tnom.
|
|
68
|
dta=0 K
|
Deviation between the temperature of the transistor and the temperature of the circuit.
|
|
69
|
trise=0 K
|
Alias of dta.
|
Output Parameters
|
1
|
weff (V)
|
Effective channel width of the actual transistor.
|
|
2
|
leff (V)
|
Effective channel length of the actual transistor.
|
|
3
|
twophif (V)
|
Diffusion potential.
|
|
4
|
bet (A/V2)
|
Gain factor of the transistor.
|
|
5
|
k (√V )
|
Body-effect factor.
|
|
6
|
ko (√V )
|
Initial body-effect factor for dual k approach.
|
|
7
|
vsbx (V)
|
Transition voltage for dual k approach.
|
|
8
|
dvsbx (V)
|
Transition-voltage range for dual K approach.
|
|
9
|
vto (V)
|
Threshold voltage.
|
|
10
|
von (V)
|
Onset voltage of the superthreshold region.
|
|
11
|
the1 (1/V)
|
Gate-bias-controlled transverse-field mobility reduction factor.
|
|
12
|
the2 (1/√V )
|
Back-bias-controlled transverse-field mobility reduction factor.
|
|
13
|
the3 (1/V)
|
Lateral-field mobility reduction factor (velocity saturation).
|
|
14
|
gam
|
Static-drain-feedback factor.
|
|
15
|
sh (V^(1-n))
|
Threshold-voltage-shift factor.
|
|
16
|
n
|
Threshold-voltage-shift exponent.
|
|
17
|
p (1/V)
|
Back-bias-shift factor.
|
|
18
|
me (√V )
|
Auxiliary parameter for subthreshold-slope factor.
|
|
19
|
a
|
Weak-avalanche multiplier.
|
|
20
|
b (V)
|
Weak-avalanche exponent factor.
|
|
21
|
c
|
Saturation-voltage reduction factor.
|
|
22
|
cox (F)
|
Gate capacitance.
|
|
23
|
cgso (F)
|
Gate/source-overlap capacitance.
|
|
24
|
cgdo (F)
|
Gate/drain-overlap capacitance.
|
|
25
|
vtre (V)
|
Depletion MOS transistor transition voltage.
|
|
26
|
ratio
|
Depletion MOS transistor gain ratio.
|
|
27
|
vfbe (V)
|
Flat band voltage.
|
|
28
|
vtemp (V)
|
kT/q at actual device temperature.
|
|
29
|
gnoise (V2)
|
Coefficient of the flicker noise for the actual transistor.
|
|
30
|
unoise (J)
|
Coefficient of the thermal noise for the actual transistor.
|
Operating-Point Parameters
|
1
|
ide (A)
|
Drain current.
|
|
2
|
ige (A)
|
Gate current.
|
|
3
|
ise (A)
|
Source current.
|
|
4
|
ibe (A)
|
Bulk current.
|
|
5
|
vds (V)
|
Drain-source voltage.
|
|
6
|
vgs (V)
|
Gate-source voltage.
|
|
7
|
vsb (V)
|
Source-bulk voltage.
|
|
8
|
ids (A)
|
Drain-source current.
|
|
9
|
idb (A)
|
Drain-bulk current.
|
|
10
|
isb (A)
|
Source-bulk current.
|
|
11
|
pwr (W)
|
Power.
|
|
12
|
vts (V)
|
Vto including back-bias effects.
|
|
13
|
vgt (V)
|
Effective gate drive including back-bias and drain effects.
|
|
14
|
vdss (V)
|
Saturation voltage at actual bias.
|
|
15
|
gm (S)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (S)
|
Bulk transconductance (d ids / d vbs).
|
|
17
|
gds (S)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
u
|
Transistor gain (gm/gds).
|
|
35
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
36
|
vearly (V)
|
Equivalent Early voltage (|Id|/gds).
|
|
37
|
keff (√V )
|
Describes body effect at actual bias.
|
|
38
|
beff (S/V)
|
Effective beta at actual bias in the simple MOS model.
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cox)).
|
|
40
|
sqrtsfw (V/√Hz )
|
|
|
|
|
Input-referred RMS white noise voltage (sqrt(sth)/gm).
|
|
41
|
sqrtsff (V/√Hz )
|
|
|
|
|
Input-referred RMS 1/f noise voltage at 1kHz (sqrt(gnoise/1000)).
|
|
42
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a O-19
|
dta M-68
|
k O-5
|
the3 O-13
|
area I-6
|
dth1n M-25
|
keff OP-37
|
tnoise M-64
|
ava M-14
|
dth2n M-26
|
kn M-4
|
tnom M-67
|
avb M-15
|
dth3n M-27
|
ko O-6
|
tox M-61
|
avc M-16
|
dvsbx O-8
|
kon M-3
|
tr M-65
|
b O-20
|
dvsbxn M-22
|
l I-4
|
tref M-66
|
beff OP-38
|
dvtn M-19
|
lap M-49
|
trise I-9
|
bet O-4
|
fknee OP-42
|
leff O-2
|
trise M-69
|
betan M-24
|
fnoise M-63
|
ln I-2
|
tth3n M-54
|
c O-21
|
fug OP-39
|
lref M-32
|
twophif O-3
|
cbb OP-33
|
gam O-14
|
ltol M-33
|
type M-1
|
cbd OP-30
|
gamman M-10
|
m I-8
|
u OP-34
|
cbg OP-31
|
gava M-46
|
m M-56
|
unoise O-30
|
cbs OP-32
|
gavb M-47
|
me O-18
|
vds OP-5
|
cdb OP-21
|
gavc M-48
|
mult I-5
|
vdss OP-14
|
cdd OP-18
|
gdelvx M-38
|
n O-16
|
vearly OP-36
|
cdg OP-19
|
gds OP-17
|
nn M-12
|
vfb M-60
|
cds OP-20
|
ggamn M-42
|
p O-17
|
vfbe O-27
|
cgb OP-25
|
gkn M-36
|
phi M-51
|
vgs OP-6
|
cgd OP-22
|
gkon M-35
|
pn M-13
|
vgt OP-13
|
cgdo O-24
|
gm OP-15
|
pwr OP-11
|
von O-10
|
cgg OP-23
|
gmb OP-16
|
ratio M-59
|
vsb OP-7
|
cgs OP-24
|
gnn M-44
|
ratio O-26
|
vsbref M-50
|
cgso O-23
|
gnoise O-29
|
region I-7
|
vsbx O-7
|
col M-62
|
gpn M-45
|
rout OP-35
|
vsbxn M-5
|
cox O-22
|
gshift M-43
|
sh O-15
|
vtemp O-28
|
csb OP-29
|
gth1n M-39
|
shiftn M-11
|
vtn M-2
|
csd OP-26
|
gth2n M-40
|
sqrtsff OP-41
|
vto O-9
|
csg OP-27
|
gth3n M-41
|
sqrtsfw OP-40
|
vtr M-58
|
css OP-28
|
gvsbxn M-37
|
subthn M-57
|
vtre O-25
|
dava M-29
|
gvtn M-34
|
tbetan M-53
|
vts OP-12
|
davb M-30
|
ibe OP-4
|
tcvt M-52
|
w I-3
|
davc M-31
|
idb OP-9
|
tgth3n M-55
|
weff O-1
|
ddelvx M-23
|
ide OP-1
|
th1n M-7
|
wn I-1
|
delvx M-6
|
ids OP-8
|
th2n M-8
|
wref M-17
|
dgamn M-28
|
ige OP-2
|
th3n M-9
|
wtol M-18
|
dkn M-21
|
isb OP-10
|
the1 O-11
|
|
dkon M-20
|
ise OP-3
|
the2 O-12
|
|
Compact MOS-Transistor Model (mos902)
The mos902 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Feb.98) as MOS model, level 902. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1993, 1998
In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement:
mp1 (0 1 2 2) mos9pch w=10u l=2u area=1.5
Sample Model Statement:
model mos9pch mos902 ler=0.93e-6 wer=20e-6 tref=27 vtor=1.11 kr=0.54 phibr=0.66 vsbxr=100 the1r=0.19 slk=-0.215e-6 swk=98e-9 swthe3=7.8e-9
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
w=1.0 scale m
|
Drawn channel width in the lay-out. Scale set by option scale.
|
|
2
|
l=1.0 scale m
|
Drawn channel length in the lay-out. Scale set by option scale.
|
|
3
|
mult=1
|
Number of devices in parallel.
|
|
4
|
area=1
|
Alias of mult.
|
|
5
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
|
|
6
|
m=1
|
Multiplicity factor.
|
|
7
|
trise=0 K
|
Temperature rise from ambient.
|
Model Definition
model modelName mos902 parameter=value ...
Model Parameters
Device type parameters
|
1
|
type=n
|
Transistor gender. Possible values are n or p.
|
Geometry parameters
|
2
|
ler=2.5e-6 m
|
Effective channel length of the reference transistor.
|
|
3
|
wer=25e-6 m
|
Effective channel width of the reference transistor.
|
|
4
|
lvar=0.3e-6 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
5
|
lap=0.1e-6 m
|
Effective channel length reduction per side.
|
|
6
|
wvar=3e-6 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
7
|
wot=1e-6 m
|
Effective channel width reduction per side.
|
|
8
|
wdog=0 m
|
Characteristic drawn gate width, below which dogboning appears.
|
Threshold-voltage parameters
|
9
|
vtor=0.8 V
|
Threshold voltage at zero back-bias.
|
|
10
|
stvto=0.01 V/K
|
Coefficient of the temperature dependence of vto.
|
|
11
|
slvto=0.5e-6 V m
|
Coefficient of the length dependence of vto.
|
|
12
|
sl2vto=0 V m2
|
Second coefficient of the length dependence of vto.
|
|
13
|
swvto=5e-6 V m
|
Coefficient of the width dependence of vto.
|
|
14
|
kor=0.5 √V
|
Low-backbias body factor.
|
|
15
|
slko=1e-6 √V m
|
Coefficient of the length dependence of ko.
|
|
16
|
swko=10e-6 √V m
|
Coefficient of the width dependence of ko.
|
|
17
|
kr=0.1 √V
|
High-backbias body factor.
|
|
18
|
slk=0.5e-6 √V m
|
Coefficient of the length dependence of k.
|
|
19
|
swk=5e-6 √V m
|
Coefficient of the width dependence of k.
|
|
20
|
phibr=0.65 V
|
Surface potential at strong inversion.
|
|
21
|
vsbxr=0.9 V
|
Transition voltage for the dual-k-factor model.
|
|
22
|
slvsbx=0.5e-6 V m
|
Coefficient of the length dependence of vsbx.
|
|
23
|
swvsbx=5e-6 V m
|
Coefficient of the width dependence of vsbx.
|
Channel-current parameters
|
24
|
betsq=0.1e-3 A/V2
|
Gain factor for an infinite square transistor.
|
|
25
|
etabet=0.5
|
Exponent of the temperature dependence of the gain factor.
|
|
26
|
the1r=0.05 1/V
|
Coefficient of the mobility reduction due to the gate-induced field.
|
|
27
|
stthe1r=3e-3 1/(V K)
|
Coefficient of the temperature dependence of the1.
|
|
28
|
slthe1r=50e-9 m/V
|
Coefficient of the length dependence of the1.
|
|
29
|
stlthe1=5e-9 m/(V K)
|
Coefficient of the temperature dependence of slthe1.
|
|
30
|
swthe1=1e-6 m/V
|
Coefficient of the width dependence of the1.
|
|
31
|
fthe1=0
|
Coefficient describing the width dependence of the1 for w < wdog.
|
|
32
|
the2r=17e-3 1/√V
|
Coefficient of the mobility reduction due to the back-bias.
|
|
33
|
stthe2r=0.1e-3 1/(√V K)
|
Coefficient of the temperature dependence of the2.
|
|
34
|
slthe2r=5e-9 m/√V
|
Coefficient of the length dependence of the2.
|
|
35
|
stlthe2=0.5e-9 m/(√V K)
|
Coefficient of the temperature dependence of slthe2.
|
|
36
|
swthe2=0.1e-6 m/√V
|
Coefficient of the width dependence of the2.
|
|
37
|
the3r=37e-3 1/V
|
Coefficient of the mobility reduction due to the lateral field.
|
|
38
|
stthe3r=0.1e-3 1/(V K)
|
|
|
|
Coefficient of the temperature dependence of the3.
|
|
39
|
slthe3r=5e-9 m/V
|
Coefficient of the length dependence of the3.
|
|
40
|
stlthe3=0.5e-9 m/(V K)
|
|
|
|
Coefficient of the temperature dependence of slthe3.
|
|
41
|
swthe3=0.1e-6 m/V
|
Coefficient of the width dependence of the3.
|
Drain-feedback parameters
|
42
|
gam1r=40e-3 V^(1-etads)
|
|
|
|
Coefficient for the drain induced threshold shift for large gate drive.
|
|
43
|
slgam1=0.1e-6 V^(1-etads) m
|
|
|
|
Coefficient of the length dependence of gam1.
|
|
44
|
swgam1=1e-6 V^(1-etads) m
|
|
|
|
Coefficient of the width dependence of gam1.
|
|
45
|
etadsr=0.6
|
Exponent of the vds dependence of gam1.
|
|
46
|
alpr=4e-3
|
Factor of the channel-length modulation.
|
|
47
|
etaalp=0.5
|
Exponent of the length dependence of alp.
|
|
48
|
slalp=0.14e-3 m^etaalp
|
|
|
|
Coefficient of the length dependence of alp.
|
|
49
|
swalp=0.1e-6 m
|
Coefficient of the width dependence of alp.
|
|
50
|
vpr=0.25 V
|
Characteristic voltage of the channel-length modulation.
|
Sub-threshold parameters
|
51
|
gamoor=1.1e-3
|
Coefficient for the drain induced threshold shift at zero gate drive.
|
|
52
|
slgamoo=10e-15 m2
|
Coefficient of the length dependence of gamoo.
|
|
53
|
etagamr=2
|
Exponent of the back-bias dependence of gamo.
|
|
54
|
mor=0.3
|
Factor for the subthreshold slope.
|
|
55
|
stmo=0.01 1/K
|
Coefficient of the temperature dependence of mo.
|
|
56
|
slmo=1.4e-3 √m
|
Coefficient of the length dependence of mo.
|
|
57
|
etamr=2
|
Exponent of the back-bias dependence of m.
|
|
58
|
zet1r=0.7
|
Weak-inversion correction factor.
|
|
59
|
etazet=0.5
|
Exponent of the length dependence of zet1.
|
|
60
|
slzet1=0.14e-6 m^etazet
|
|
|
|
Coefficient of the length dependence of zet1.
|
|
61
|
vsbtr=99 V
|
Limiting voltage of the vsb dependence of m and gamo.
|
|
62
|
slvsbt=10e-6 V m
|
Coefficient of the length dependence of vsbt.
|
Weak-avalanche parameters
|
63
|
a1r=22
|
Factor of the weak-avalanche current.
|
|
64
|
sta1=0.1 1/K
|
Coefficient of the temperature dependence of a1.
|
|
65
|
sla1=10e-6 m
|
Coefficient of the length dependence of a1.
|
|
66
|
swa1=0.1e-3 m
|
Coefficient of the width dependence of a1.
|
|
67
|
a2r=33 V
|
Exponent of the weak-avalanche current.
|
|
68
|
sla2=10e-6 V m
|
Coefficient of the length dependence of a2.
|
|
69
|
swa2=0.1e-3 V m
|
Coefficient of the width dependence of a2.
|
|
70
|
a3r=0.6
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
71
|
sla3=1e-6 m
|
Coefficient of the length dependence of a3.
|
|
72
|
swa3=10e-6 m
|
Coefficient of the width dependence of a3.
|
Charge parameters
|
73
|
tox=20e-9 m
|
Thickness of the oxide layer.
|
|
74
|
col=50e-12 F/m
|
Gate overlap capacitance per unit channel width.
|
Noise parameters
|
75
|
ntr=21e-21 J
|
Coefficient of the thermal noise.
|
|
76
|
nfr=16e-12 V2
|
Coefficient of the flicker noise.
|
Temperature parameters
|
77
|
tr (C)
|
Reference temperature. Default set by option tnom.
|
|
78
|
tref (C)
|
Alias of tr. Default set by option tnom.
|
|
79
|
tnom (C)
|
Alias of tr. Default set by option tnom.
|
|
80
|
dta=0 K
|
Temperature offset of the device.
|
|
81
|
trise=0 K
|
Alias of dta.
|
Output Parameters
|
1
|
le (m)
|
Effective channel length.
|
|
2
|
we (m)
|
Effective channel width.
|
|
3
|
vto (V)
|
Threshold voltage at zero back-bias.
|
|
4
|
ko (√V )
|
Low-backbias body factor.
|
|
5
|
k (√V )
|
High-backbias body factor.
|
|
6
|
phib (V)
|
Surface potential at strong inversion.
|
|
7
|
vsbx (V)
|
Transition voltage for the dual-k-factor model.
|
|
8
|
bet (A/V2)
|
Gain factor (* mult).
|
|
9
|
the1 (1/V)
|
Coefficient of the mobility reduction due to the gate-induced field.
|
|
10
|
the2 (1/√V )
|
Coefficient of the mobility reduction due to the back-bias.
|
|
11
|
the3 (1/V)
|
Coefficient of the mobility reduction due to the lateral field.
|
|
12
|
gam1 (V^(1-etads))
|
Coefficient for the drain induced threshold shift for large gate drive.
|
|
13
|
etads
|
Exponent of the vds dependence of gam1.
|
|
14
|
alp
|
Factor of the channel-length modulation.
|
|
15
|
vp (V)
|
Characteristic voltage of the channel-length modulation.
|
|
16
|
gamoo
|
Coefficient for the drain induced threshold shift at zero gate drive.
|
|
17
|
etagam
|
Exponent of the back-bias dependence of gamo.
|
|
18
|
mo
|
Factor for the subthreshold slope.
|
|
19
|
etam
|
Exponent of the back-bias dependence of m.
|
|
20
|
phit (V)
|
Thermal voltage.
|
|
21
|
zet1
|
Weak-inversion correction factor.
|
|
22
|
vsbt (V)
|
Limiting voltage of the vsb dependence of m and gamo.
|
|
23
|
a1
|
Factor of the weak-avalanche current.
|
|
24
|
a2 (V)
|
Exponent of the weak-avalanche current.
|
|
25
|
a3
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
26
|
cox (F)
|
Gate-to-channel capacitance (* mult).
|
|
27
|
cgdo (F)
|
Gate-drain overlap capacitance (* mult).
|
|
28
|
cgso (F)
|
Gate-source overlap capacitance (* mult).
|
|
29
|
nt (J)
|
Coefficient of the thermal noise.
|
|
30
|
nf (V2)
|
Coefficient of the flicker noise (/ mult).
|
|
31
|
lv2 (m)
|
|
|
32
|
lv1 (m)
|
|
|
33
|
lv51 (m)
|
|
|
34
|
lv50 (V)
|
|
Operating-Point Parameters
|
1
|
ide (A)
|
Resistive drain current.
|
|
2
|
ige (A)
|
Resistive gate current.
|
|
3
|
ise (A)
|
Resistive source current.
|
|
4
|
ibe (A)
|
Resistive bulk current.
|
|
5
|
vds (V)
|
Drain-source voltage.
|
|
6
|
vgs (V)
|
Gate-source voltage.
|
|
7
|
vsb (V)
|
Source-bulk voltage.
|
|
8
|
ids (A)
|
Resistive drain-source current.
|
|
9
|
idb (A)
|
Resistive drain-bulk current.
|
|
10
|
isb (A)
|
Resistive source-bulk current.
|
|
11
|
iavl (A)
|
Substrate current.
|
|
12
|
pwr (W)
|
Power.
|
|
13
|
vt1 (V)
|
Vto including backbias effects.
|
|
14
|
vgt2 (V)
|
Effective gate drive including backbias and drain effects.
|
|
15
|
vdss1 (V)
|
Saturation voltage at actual bias.
|
|
16
|
vsat (V)
|
Saturation limit.
|
|
17
|
gm (S)
|
Transconductance (d ids / d vgs).
|
|
18
|
gmb (S)
|
Bulk transconductance (d ids / d vbs).
|
|
19
|
gds (S)
|
Output conductance (d ids / d vds).
|
|
20
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
21
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
22
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
23
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
24
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
25
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
26
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
27
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
28
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
29
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
30
|
css (F)
|
Capacitance (d qs / d vs).
|
|
31
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
32
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
33
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
34
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
35
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
36
|
u
|
Transistor gain (gm/gds).
|
|
37
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
38
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
39
|
keff (√V )
|
Describes body effect at actual bias.
|
|
40
|
beff (S/V)
|
Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).
|
|
41
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
42
|
sqrtsfw (V/√Hz )
|
Input-referred RMS white noise voltage (sqrt(sth)/gm).
|
|
43
|
sqrtsff (V/√Hz )
|
Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
|
|
44
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
45
|
lv9 (V)
|
|
|
46
|
lv10 (V)
|
|
|
47
|
lv26 (V)
|
|
|
48
|
lx4 (A)
|
|
|
49
|
lx50 (A)
|
|
|
50
|
lx12 (Coul)
|
|
|
51
|
lx14 (Coul)
|
|
|
52
|
lx16 (Coul)
|
|
|
53
|
linearity_factor
|
|
|
54
|
I1 (A)
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
I1 OP-54
|
fthe1 M-31
|
nf O-30
|
swko M-16
|
a1 O-23
|
fug OP-41
|
nfr M-76
|
swthe1 M-30
|
a1r M-63
|
gam1 O-12
|
nt O-29
|
swthe2 M-36
|
a2 O-24
|
gam1r M-42
|
ntr M-75
|
swthe3 M-41
|
a2r M-67
|
gamoo O-16
|
phib O-6
|
swvsbx M-23
|
a3 O-25
|
gamoor M-51
|
phibr M-20
|
swvto M-13
|
a3r M-70
|
gds OP-19
|
phit O-20
|
the1 O-9
|
alp O-14
|
gm OP-17
|
pwr OP-12
|
the1r M-26
|
alpr M-46
|
gmb OP-18
|
region I-5
|
the2 O-10
|
area I-4
|
iavl OP-11
|
rout OP-37
|
the2r M-32
|
beff OP-40
|
ibe OP-4
|
sl2vto M-12
|
the3 O-11
|
bet O-8
|
idb OP-9
|
sla1 M-65
|
the3r M-37
|
betsq M-24
|
ide OP-1
|
sla2 M-68
|
tnom M-79
|
cbb OP-35
|
ids OP-8
|
sla3 M-71
|
tox M-73
|
cbd OP-32
|
ige OP-2
|
slalp M-48
|
tr M-77
|
cbg OP-33
|
isb OP-10
|
slgam1 M-43
|
tref M-78
|
cbs OP-34
|
ise OP-3
|
slgamoo M-52
|
trise I-7
|
cdb OP-23
|
k O-5
|
slk M-18
|
trise M-81
|
cdd OP-20
|
keff OP-39
|
slko M-15
|
type M-1
|
cdg OP-21
|
ko O-4
|
slmo M-56
|
u OP-36
|
cds OP-22
|
kor M-14
|
slthe1r M-28
|
vds OP-5
|
cgb OP-27
|
kr M-17
|
slthe2r M-34
|
vdss1 OP-15
|
cgd OP-24
|
l I-2
|
slthe3r M-39
|
vearly OP-38
|
cgdo O-27
|
lap M-5
|
slvsbt M-62
|
vgs OP-6
|
cgg OP-25
|
le O-1
|
slvsbx M-22
|
vgt2 OP-14
|
cgs OP-26
|
ler M-2
|
slvto M-11
|
vp O-15
|
cgso O-28
|
linearity_factor OP-53
|
slzet1 M-60
|
vpr M-50
|
col M-74
|
lv1 O-32
|
sqrtsff OP-43
|
vsat OP-16
|
cox O-26
|
lv10 OP-46
|
sqrtsfw OP-42
|
vsb OP-7
|
csb OP-31
|
lv2 O-31
|
sta1 M-64
|
vsbt O-22
|
csd OP-28
|
lv26 OP-47
|
stlthe1 M-29
|
vsbtr M-61
|
csg OP-29
|
lv50 O-34
|
stlthe2 M-35
|
vsbx O-7
|
css OP-30
|
lv51 O-33
|
stlthe3 M-40
|
vsbxr M-21
|
dta M-80
|
lv9 OP-45
|
stmo M-55
|
vt1 OP-13
|
etaalp M-47
|
lvar M-4
|
stthe1r M-27
|
vto O-3
|
etabet M-25
|
lx12 OP-50
|
stthe2r M-33
|
vtor M-9
|
etads O-13
|
lx14 OP-51
|
stthe3r M-38
|
w I-1
|
etadsr M-45
|
lx16 OP-52
|
stvto M-10
|
wdog M-8
|
etagam O-17
|
lx4 OP-48
|
swa1 M-66
|
we O-2
|
etagamr M-53
|
lx50 OP-49
|
swa2 M-69
|
wer M-3
|
etam O-19
|
m I-6
|
swa3 M-72
|
wot M-7
|
etamr M-57
|
mo O-18
|
swalp M-49
|
wvar M-6
|
etazet M-59
|
mor M-54
|
swgam1 M-44
|
zet1 O-21
|
fknee OP-44
|
mult I-3
|
swk M-19
|
zet1r M-58
|
Compact MOS-Transistor Model (mos903)
The mos903 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Jun.98) as MOS model, level 903. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1993, 1998
In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement
m_1 (1 2 0 0) mos9nch w=0.35e-6 l=0.35e-6
Sample Model Statement
model mos9nch mos903 ler=3.5e-7 wer=1e-5 lvar=0 lap=2.2e-8 wvar=0 wot=3e-8 vtor=0.76 the1r=0.67 stthe1r=-1.76e-3 etaalp=0 slalp=0 alpr=0.01
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=1.5e-06 m
|
Drawn channel length in the lay-out. Scale set by option scale.
|
|
3
|
w=2e-05 m
|
Drawn channel width in the lay-out. Scale set by option scale.
|
|
4
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
5
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
6
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
7
|
m=1
|
alias of mult.
|
Model Definition
model modelName mos903 parameter=value ...
Model Parameters
|
1
|
level=903
|
MOS Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage
|
|
5
|
vbdblow=0 V
|
Low limit of drain-bulk voltage.
|
|
6
|
vbdbhigh=0 V
|
High limit of drain-bulk voltage
|
|
7
|
vbsblow=0 V
|
Low limit of source-bulk voltage.
|
|
8
|
vbsbhigh=0 V
|
High limit of source-bulk voltage.
|
|
9
|
vballmsg=1
|
All ovcheck messages if set to 1.
|
|
10
|
tmin=0 s
|
Ovcheck tmin value.
|
|
11
|
tdelay=0 s
|
Ovcheck tdelay value.
|
|
12
|
stop=0
|
Stop simulation on overvoltage when STOP==1.
|
|
13
|
ler=1.1e-06(n)/1.25e-06(p) m
|
|
|
|
Effective channel length of the reference transistor.
|
|
14
|
wer=2e-05 m
|
Effective channel width of the reference transistor.
|
|
15
|
lvar=-2.2e-07(n)/-4.6e-07(p) m
|
|
|
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
16
|
lap=1e-07(n)/2.5e-08(p) m
|
|
|
|
Effective channel length reduction per side.
|
|
17
|
wvar=-2.5e-08(n)/-1.3e-07(p) m
|
|
|
|
Difference between the actual and the programmed field-oxide opening.
|
|
18
|
wot=0 m
|
Effective channel width reduction per side.
|
|
19
|
tr=21 unitCELSIUS
|
Reference temperature. Default set by option tnom.
|
|
20
|
vtor=0.73(n)/1.1(p) V
|
|
|
|
Threshold voltage at zero back-bias.
|
|
21
|
stvto=-0.0012(n)/-0.0017(p) V/K
|
|
|
|
Coefficient of the temperature dependence of vto.
|
|
22
|
slvto=-1.35e-07(n)/3.5e-08(p) V m
|
|
|
|
Coefficient of the length dependence of vto.
|
|
23
|
sl2vto=0 V m2
|
Second coefficient of the length dependence of vto.
|
|
24
|
sl3vto=0 V
|
Third coefficient of the length dependence of vto.
|
|
25
|
swvto=1.3e-07(n)/5e-08(p) V m
|
|
|
|
Coefficient of the width dependence of vto.
|
|
26
|
kor=0.65(n)/0.47(p) V
|
|
|
|
Low-backbias body factor.
|
|
27
|
slko=-1.3e-07(n)/-2e-07(p) V m
|
|
|
|
Coefficient of the length dependence of ko.
|
|
28
|
sl2ko=0 V1/2m2
|
Second coefficient of the length dependence of ko.
|
|
29
|
swko=2e-09(n)/1.15e-07(p) V m
|
|
|
|
Coefficient of the width dependence of ko.
|
|
30
|
kr=0.11(n)/0.47(p) V
|
|
|
|
High-backbias body factor.
|
|
31
|
slk=-2.8e-07(n)/-2e-07(p) V m
|
|
|
|
Coefficient of the length dependence of k.
|
|
32
|
sl2k=0 V1/2m2
|
Second coefficient of the length dependence of k.
|
|
33
|
swk=2.75e-07(n)/1.15e-07(p) V m
|
|
|
|
Coefficient of the width dependence of k.
|
|
34
|
phibr=0.65 V
|
Surface potential at strong inversion.
|
|
35
|
vsbxr=0.66(n)/1e-12(p) V
|
|
|
|
Transition voltage for the dual-k-factor model.
|
|
36
|
slvsbx=0 V m
|
Coefficient of the length dependence of vsbx.
|
|
37
|
swvsbx=-6.75e-07(n)/0(p) V m
|
|
|
|
Coefficient of the width dependence of vsbx.
|
|
38
|
betsq=8.3e-05(n)/2.61e-05(p) A/V2
|
|
|
|
Gain factor for an infinite square transistor.
|
|
39
|
etabet=1.6
|
Exponent of the temperature dependence of the gain factor.
|
|
40
|
lp1=1e-06 m
|
Characteristic length of first profile.
|
|
41
|
fbet1=0
|
Relative mobility decrease due to first profile.
|
|
42
|
lp2=1e-08 m
|
Characteristic length of second profile.
|
|
43
|
fbet2=0
|
Relative mobility decrease due to second profile.
|
|
44
|
the1r=0.19 1/V
|
Coefficient of the mobility reduction due to the gate-induced field.
|
|
45
|
stthe1r=0 1/(V K)
|
Coefficient of the temperature dependence of the1.
|
|
46
|
slthe1r=1.4e-07(n)/7e-08(p) m/V
|
|
|
|
Coefficient of the length dependence of the1.
|
|
47
|
stlthe1=0 m/(V K)
|
Coefficient of the temperature dependence of slthe1.
|
|
48
|
gthe1=0
|
Parameter that selects either the old (gthe1=0) or the new (gthe1=1) scaling rule of the1.
|
|
49
|
swthe1=-5.8e-08(n)/-8e-08(p) m/V
|
|
|
|
Coefficient of the width dependence of the1.
|
|
50
|
wdog=0 m
|
Characteristic drawn gate width, below which dogboning appears.
|
|
51
|
fthe1=0
|
Coefficient describing the width dependence of the1 for w < wdog.
|
|
52
|
the2r=0.012(n)/0.165(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to the back-bias.
|
|
53
|
stthe2r=0 1/(V K)
|
|
|
|
|
Coefficient of the temperature dependence of the2.
|
|
54
|
slthe2r=-3.3e-08(n)/-7.5e-08(p) m/V
|
|
|
|
Coefficient of the length dependence of the2.
|
|
55
|
stlthe2=0 m/(V K)
|
|
|
|
|
Coefficient of the temperature dependence of slthe2.
|
|
56
|
swthe2=3e-08(n)/2e-08(p) m/V
|
|
|
|
Coefficient of the width dependence of the2.
|
|
57
|
the3r=0.145(n)/0.027(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to the lateral field.
|
|
58
|
stthe3r=-0.00066(n)/0(p) 1/(V K)
|
|
|
|
Coefficient of the temperature dependence of the3.
|
|
59
|
slthe3r=1.85e-07(n)/2.7e-08(p) m/V
|
|
|
|
Coefficient of the length dependence of the3.
|
|
60
|
stlthe3=-6.2e-10(n)/0(p) m/(V K)
|
|
|
|
Coefficient of the temperature dependence of slthe3.
|
|
61
|
swthe3=2e-08(n)/1.1e-08(p) m/V
|
|
|
|
Coefficient of the width dependence of the3.
|
|
62
|
gam1r=0.145(n)/0.077(p) V^(1-etads)
|
|
|
|
Coefficient for the drain induced threshold shift for large gate drive.
|
|
63
|
slgam1=1.6e-07(n)/1.05e-07(p) V^(1-etads) m
|
|
|
|
Coefficient of the length dependence of gam1.
|
|
64
|
swgam1=-1e-08(n)/-1.1e-08(p) V^(1-etads) m
|
|
|
|
Coefficient of the width dependence of gam1.
|
|
65
|
etadsr=0.6
|
Exponent of the vds dependence of gam1.
|
|
66
|
alpr=0.003(n)/0.044(p)
|
|
|
|
Factor of the channel-length modulation.
|
|
67
|
etaalp=0.15(n)/0.17(p)
|
|
|
|
Exponent of the length dependence of alp.
|
|
68
|
slalp=-0.00565(n)/0.009(p) m^etaalp
|
|
|
|
Coefficient of the length dependence of alp.
|
|
69
|
swalp=1.67e-09(n)/1.8e-10(p) m
|
|
|
|
Coefficient of the width dependence of alp.
|
|
70
|
vpr=0.34(n)/0.235(p) V
|
|
|
|
Characteristic voltage of the channel-length modulation.
|
|
71
|
gamoor=0.018(n)/0.007(p)
|
|
|
|
Coefficient for the drain induced threshold shift at zero gate drive.
|
|
72
|
slgamoo=2e-14(n)/1.1e-14(p) m2
|
|
|
|
Coefficient of the length dependence of gamoo.
|
|
73
|
sl2gamoo=0
|
Second coefficient of the length dependence of gamoo.
|
|
74
|
etagamr=2(n)/1(p)
|
|
|
|
|
Exponent of the back-bias dependence of gamo.
|
|
75
|
mor=0.5(n)/0.375(p)
|
|
|
|
|
Factor for the subthreshold slope.
|
|
76
|
stmo=0 1/K
|
Coefficient of the temperature dependence of mo.
|
|
77
|
slmo=0.00028(n)/4.7e-05(p) m
|
|
|
|
Coefficient of the length dependence of mo.
|
|
78
|
etamr=2(n)/1(p)
|
Exponent of the back-bias dependence of m.
|
|
79
|
zet1r=0.42(n)/1.3(p)
|
|
|
|
|
Weak-inversion correction factor.
|
|
80
|
etazet=0.17(n)/0.03(p)
|
|
|
|
Exponent of the length dependence of zet1.
|
|
81
|
slzet1=-0.39(n)/-2.8(p) m^etazet
|
|
|
|
Coefficient of the length dependence of zet1.
|
|
82
|
vsbtr=2.1(n)/100(p) V
|
|
|
|
Limiting voltage of the vsb dependence of m and gamo.
|
|
83
|
slvsbt=-4.4e-06(n)/0(p) V m
|
|
|
|
Coefficient of the length dependence of vsbt.
|
|
84
|
a1r=6(n)/10(p)
|
Factor of the weak-avalanche current.
|
|
85
|
sta1=0 1/K
|
Coefficient of the temperature dependence of a1.
|
|
86
|
sla1=1.3e-06(n)/-1.5e-05(p) m
|
|
|
|
Coefficient of the length dependence of a1.
|
|
87
|
swa1=3e-06(n)/3e-05(p) m
|
|
|
|
Coefficient of the width dependence of a1.
|
|
88
|
a2r=38(n)/59(p) V
|
Exponent of the weak-avalanche current.
|
|
89
|
sla2=1e-06(n)/-8e-06(p) V m
|
|
|
|
Coefficient of the length dependence of a2.
|
|
90
|
swa2=2e-06(n)/1.5e-05(p) V m
|
|
|
|
Coefficient of the width dependence of a2.
|
|
91
|
a3r=0.65(n)/0.52(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
92
|
sla3=-5.5e-07(n)/-4.5e-07(p) m
|
|
|
|
Coefficient of the length dependence of a3.
|
|
93
|
swa3=0(n)/-1.4e-07(p) m
|
|
|
|
Coefficient of the width dependence of a3.
|
|
94
|
tox=2.5e-08 m
|
Thickness of the oxide layer.
|
|
95
|
col=3.2e-10 F/m
|
Gate overlap capacitance per unit channel width.
|
|
96
|
ntr=2.44e-20(n)/2.11e-20(p) J
|
|
|
|
|
Coefficient of the thermal noise.
|
|
97
|
nfmod=0
|
Switch that selects either old or new flicker noise model.
|
|
98
|
nfr=7e-11(n)/2.14e-11(p) V2
|
|
|
|
Flicker noise coefficient of the reference transistor (for nfmod=0).
|
|
99
|
nfar=7.15e+22(n)/1.53e+22(p) 1/(V m4)
|
|
|
|
First coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
|
|
100
|
nfbr=2.16e+07(n)/4.06e+06(p) 1/(V m2)
|
|
|
|
Second coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
|
|
101
|
nfcr=0(n)/2.92e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
|
|
102
|
th3mod=1
|
Flag for theta3 clipping.
|
|
103
|
dta=0 K
|
Temperature offset of the device.
|
|
104
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
105
|
tnom (unitCELSIUS)
|
alias of tnom.
|
|
106
|
tref (unitCELSIUS)
|
alias of tnom.
|
|
107
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ids (A)
|
Resistive drain-source current.
|
|
2
|
iavl (A)
|
Substrate current.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Threshold voltage at zero back-bias.
|
|
7
|
vts (V)
|
VT0 including backbias effects.
|
|
8
|
vgt (V)
|
Effective gate drive including backbias and drain effects.
|
|
9
|
vdss (V)
|
Saturation voltage at actual bias.
|
|
10
|
vsat (V)
|
Saturation limit.
|
|
11
|
gm (S)
|
Transconductance (d ids / d vgs).
|
|
12
|
gmb (S)
|
Bulk transconductance (d ids / d vbs).
|
|
13
|
gds (S)
|
Output conductance (d ids / d vds).
|
|
14
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
15
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
16
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
17
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
18
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
19
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
20
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
21
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
22
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
23
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
24
|
css (F)
|
Capacitance (d qs / d vs).
|
|
25
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
26
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
27
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
28
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
29
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
30
|
cgdol (F)
|
Drain overlap capacitance of the actual transistor.
|
|
31
|
cgsol (F)
|
Gate overlap capacitance of the actual transistor.
|
|
32
|
weff (m)
|
Effective channel width for geometrical models.
|
|
33
|
leff (m)
|
Effective channel length for geometrical models.
|
|
34
|
u
|
Transistor gain (gm/gds).
|
|
35
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
36
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
37
|
keff (V )
|
Describes body effect at actual bias.
|
|
38
|
beff (S/V)
|
Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
40
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage (sqrt(sth)/gm).
|
|
41
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
|
|
42
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
43
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
44
|
von (V)
|
Signed vts (<0 for PMOS, >0 for NMOS).
|
|
45
|
table_ids (A)
|
Channel current.
|
|
46
|
table_isub (A)
|
Substrate current.
|
|
47
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
48
|
table_vdsat (V)
|
Saturation voltage at actual bias.
|
|
49
|
table_qg (Coul)
|
Charge at g node.
|
|
50
|
table_qd (Coul)
|
Charge at d node.
|
|
51
|
table_qb (Coul)
|
Charge at b node.
|
|
52
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
513
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
a1r M-84
|
gm OP-11
|
slk M-31
|
th3mod M-102
|
|
a2r M-88
|
gmb OP-12
|
slko M-27
|
the1r M-44
|
|
a3r M-91
|
gthe1 M-48
|
slmo M-77
|
the2r M-52
|
|
alpr M-66
|
iavl OP-2
|
slthe1r M-46
|
the3r M-57
|
|
beff OP-38
|
ids OP-1
|
slthe2r M-54
|
tmin M-10
|
|
betsq M-38
|
keff OP-37
|
slthe3r M-59
|
tnom M-105
|
|
cbb OP-29
|
kor M-26
|
slvsbt M-83
|
tox M-94
|
|
cbd OP-26
|
kr M-30
|
slvsbx M-36
|
tr M-19
|
|
cbg OP-27
|
l I-2
|
slvto M-22
|
tref M-106
|
|
cbs OP-28
|
lap M-16
|
slzet1 M-81
|
trise I-5
|
|
cdb OP-17
|
leff OP-33
|
sqrtsff OP-41
|
type M-104
|
|
cdd OP-14
|
ler M-13
|
sqrtsfw OP-40
|
u OP-34
|
|
cdg OP-15
|
level M-1
|
sta1 M-85
|
vballmsg M-9
|
|
cds OP-16
|
lp1 M-40
|
stlthe1 M-47
|
vbdbhigh M-6
|
|
cgb OP-21
|
lp2 M-42
|
stlthe2 M-55
|
vbdblow M-5
|
|
cgd OP-18
|
lvar M-15
|
stlthe3 M-60
|
vbds M-4
|
|
cgdol OP-30
|
m I-7
|
stmo M-76
|
vbox M-3
|
|
cgg OP-19
|
meff O-2
|
stop M-12
|
vbsbhigh M-8
|
|
cgs OP-20
|
mor M-75
|
stthe1r M-45
|
vbsblow M-7
|
|
cgsol OP-31
|
mos_region OP-52
|
stthe2r M-53
|
vds OP-3
|
|
col M-95
|
mult I-1
|
stthe3r M-58
|
vdss OP-9
|
|
compatible M-107
|
nfar M-99
|
stvto M-21
|
vearly OP-36
|
|
csb OP-25
|
nfbr M-100
|
swa1 M-87
|
vgs OP-4
|
|
csd OP-22
|
nfcr M-101
|
swa2 M-90
|
vgt OP-8
|
|
csg OP-23
|
nfmod M-97
|
swa3 M-93
|
von OP-44
|
|
css OP-24
|
nfr M-98
|
swalp M-69
|
vpr M-70
|
|
ctype OP-43
|
ntr M-96
|
swgam1 M-64
|
vsat OP-10
|
|
diode_region OP-53
|
paramchk M-2
|
swk M-33
|
vsb OP-5
|
|
dta M-103
|
phibr M-34
|
swko M-29
|
vsbtr M-82
|
|
etaalp M-67
|
printscaled I-4
|
swthe1 M-49
|
vsbxr M-35
|
|
etabet M-39
|
region I-6
|
swthe2 M-56
|
vto OP-6
|
|
etadsr M-65
|
rout OP-35
|
swthe3 M-61
|
vtor M-20
|
|
etagamr M-74
|
sl2gamoo M-73
|
swvsbx M-37
|
vts OP-7
|
|
etamr M-78
|
sl2k M-32
|
swvto M-25
|
w I-3
|
|
etazet M-80
|
sl2ko M-28
|
table_ids OP-45
|
wdog M-50
|
|
fbet1 M-41
|
sl2vto M-23
|
table_isub OP-46
|
weff OP-32
|
|
fbet2 M-43
|
sl3vto M-24
|
table_qb OP-51
|
wer M-14
|
|
fknee OP-42
|
sla1 M-86
|
table_qd OP-50
|
wot M-18
|
|
fthe1 M-51
|
sla2 M-89
|
table_qg OP-49
|
wvar M-17
|
|
fug OP-39
|
sla3 M-92
|
table_vdsat OP-48
|
zet1r M-79
|
|
gam1r M-62
|
slalp M-68
|
table_vth OP-47
|
|
|
gamoor M-71
|
slgam1 M-63
|
tdelay M-11
|
|
|
gds OP-13
|
slgamoo M-72
|
tempeff O-1
|
|
Compact MOS-Transistor Distortion Model (mos1000)
The mos10.00 model is an experimental model based on the thesis of Ronald van Langevelde: "A compact MOSFET Model for Distortion Analysis in Analog Circuit Design", Technische Universiteit Eindhoven, 1998.
Note: In noise analysis, mos10.00 instances will not generate any contribution, since there are no noise sources included (yet) in the mos10.00 model.
(c) Philips Electronics N.V. 1999
In extension to the description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s [b] ModelName parameter=value ...
Instance Parameters
|
1
|
w=1.0 scale m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
2
|
l=1.0 scale m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
mult=1
|
Number of devices in parallel.
|
|
4
|
area=1
|
Alias of mult.
|
|
5
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
6
|
m=1
|
Multiplicity factor.
|
|
7
|
trise=0 K
|
Temperature rise from ambient.
|
Model Definition
model modelName mos1000 parameter=value ...
Model Parameters
Device type parameters
|
1
|
type=n
|
Transistor gender. Possible values are n and p.
|
Geometry parameters
|
2
|
ler=1.0e-6 m
|
Effective channel length of the reference transistor.
|
|
3
|
wer=1e-6 m
|
Effective channel width of the reference transistor.
|
|
4
|
lvar=0.0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
5
|
lap=45.0e-9 m
|
Effective channel length reduction per side.
|
|
6
|
wvar=-5.0e-9 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
7
|
wot=50.0e-9 m
|
Effective channel width reduction per side.
|
Threshold-voltage parameters
|
8
|
vfbr=-518.9e-03 V
|
Flat-band voltage for reference transistor.
|
|
9
|
stvfb=-1.2e-03 V/K
|
Coefficient of temperature dependence of vfb.
|
|
10
|
slvfb=24.0e-09 V m
|
Coefficient of length dependence of vfb.
|
|
11
|
sl2vfb=-1.1e-15 V m2
|
Second coefficient of length dependence of vfb.
|
|
12
|
swvfb=4.400e-09 V m
|
Coefficient of the width dependency of vfb.
|
|
13
|
kor=368.0e-03 V
|
Body effect coefficient for the reference transistor.
|
|
14
|
slko=-8.240e-09 V m
|
Coefficient of the length dependence of ko.
|
|
15
|
sl2ko=-2.260e-15 V m2
|
Second coefficient of the length dependence of ko.
|
|
16
|
swko=5.86e-09 V m
|
Coefficient of the width dependence of ko.
|
|
17
|
phibr=0.6 V
|
Surface potential at strong inversion.
|
Channel-current parameters
|
18
|
betsq=370.9e-06 A/V2
|
Gain factor for an infinite square transistor.
|
|
19
|
etabet=1.6
|
Exponent of the temperature dependence of the gain factor.
|
|
20
|
thesrr=16.10e-3 1/V2
|
Mobility degradation parameter due to surface roughness scattering.
|
|
21
|
stthesr=0.0 1/(V2 K)
|
Coefficient of the temperature dependence of thesr.
|
|
22
|
swthesr=0.0 1/(V2 m)
|
|
|
|
|
Coefficient of the width dependence of thesr.
|
|
23
|
thephr=0.055 1/V
|
Mobility degradation parameter due to phonon scattering.
|
|
24
|
sttheph=0.0 1/(V K)
|
|
|
|
|
Coefficient of the temperature dependence of theph.
|
|
25
|
swtheph=0.0 1/(V m)
|
|
|
|
|
Coefficient of the width dependence of theph.
|
|
26
|
etamobr=1.6
|
Effective field parameter for dependence on depletion charge.
|
|
27
|
swetamob=0.0 1/m
|
Coefficient of the width dependence of etamobr.
|
|
28
|
thersq=0.155 1/V
|
Coefficient of gate voltage independent part of series resistance.
|
|
29
|
swther=0.0 1/(V m)
|
|
|
|
|
Coefficient of the width dependence of ther.
|
|
30
|
ther1=0.0 V
|
Numerator of gate voltage independent part of series resistance.
|
|
31
|
ther2=1.0 V
|
Denominator of gate voltage independent part of series resistance.
|
|
32
|
thenr=0.480 1/V
|
Velocity saturation parameter due to optical phonon scattering.
|
|
33
|
stthen=0.0 1/(V K)
|
|
|
|
|
Coefficient of the temperature dependence of then.
|
|
34
|
swthen=0.0 1/(V m)
|
|
|
|
|
Coefficient of the width dependence of then.
|
|
35
|
thepr=0.0 1/V
|
Velocity saturation parameter due to acoustic phonon scattering.
|
|
36
|
stthep=0.0 1/(V K)
|
|
|
|
|
Coefficient of the temperature dependence of thep.
|
|
37
|
swthep=0.0 1/(V m)
|
|
|
|
|
Coefficient of the width dependence of thep.
|
|
38
|
gthep=1.0
|
Velocity saturation factor due to acoustic phonon scattering.
|
|
39
|
thethr=3.227e-3 1/V3
|
|
|
|
|
Coefficient of self-heating.
|
|
40
|
sltheth=2.460e-9 1/(V3 m)
|
|
|
|
Coefficient of the length dependence of theth.
|
|
41
|
swtheth=0.0 1/(V3 m)
|
|
|
|
|
Coefficient of the width dependence of theth.
|
Sub-threshold parameters
|
42
|
sdiblo=2.030e-03 1/V
|
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
43
|
sdiblexp=1.340
|
Exponent of the length dependence of sdibl.
|
|
44
|
dphi=0.800 V
|
Parameter for short-channel subthreshold behavior.
|
Saturation parameters
|
45
|
ssfsq=6.250e-03 1/V
|
|
|
|
|
Static feedback parameter.
|
|
46
|
swssf=0.0 1/(V m)
|
|
|
|
|
Coefficient of the width dependence of ssf.
|
|
47
|
alpsq=0.010 m
|
Characteristic length parameter for channel length modulation.
|
|
48
|
swalp=0.0 m
|
Coefficient of the width dependence of alp.
|
|
49
|
vp=0.075 V
|
Characteristic voltage of channel-length modulation.
|
Smoothing parameters
|
50
|
mexpo=0.093
|
Smoothing factor.
|
|
51
|
mexpl=0.065
|
Coefficient of the length dependence of mexp.
|
Weak-avalanche parameters
|
52
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
53
|
sta1=0.0 1/K
|
Coefficient of the temperature dependence of a1.
|
|
54
|
sla1=1.30e-6 m
|
Coefficient of the length dependence of a1.
|
|
55
|
swa1=3.0e-06 m
|
Coefficient of the width dependence of a1.
|
|
56
|
a2r=38.0 V
|
Exponent of the weak-avalanche current.
|
|
57
|
sla2=1.00e-06 V m
|
Coefficient of the length dependence of a2.
|
|
58
|
swa2=2.00e-06 V m
|
Coefficient of the width dependence of a2.
|
|
59
|
a3r=0.650
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
60
|
sla3=-550.0e-06 m
|
Coefficient of the length dependence of a3.
|
|
61
|
swa3=0.0 m
|
Coefficient of the width dependence of a3.
|
Charge parameters
|
62
|
tox=4.5e-09 m
|
Thickness of the oxide layer.
|
|
63
|
col=320e-12 F/m
|
Gate overlap capacitance per unit channel width.
|
Temperature parameters
|
64
|
tr (C)
|
Reference temperature. Default set by option tnom.
|
|
65
|
tref (C)
|
Alias of tr. Default set by option tnom.
|
|
66
|
tnom (C)
|
Alias of tr. Default set by option tnom.
|
|
67
|
dta=0.0 K
|
Temperature offset of the device. It served as the default value of instance trise.
|
|
68
|
trise=0.0 K
|
Alias of dta.
|
Output Parameters
|
1
|
le (m)
|
Effective channel length.
|
|
2
|
we (m)
|
Effective channel width.
|
|
3
|
vfb (V)
|
Flat-band voltage.
|
|
4
|
ko (V )
|
Body effect coefficient.
|
|
5
|
phib (V)
|
Surface potential at strong inversion.
|
|
6
|
bet (A/V2)
|
Gain factor.
|
|
7
|
thesr (1/V2)
|
Mobility degradation parameter due to surface roughness scattering.
|
|
8
|
theph (1/V)
|
Mobility degradation parameter due to phonon scattering.
|
|
9
|
etamob
|
Effective field parameter for dependence on depletion charge.
|
|
10
|
ther (1/V)
|
Coefficient of gate voltage independent part of series resistance.
|
|
11
|
ther1 (V)
|
Numerator of gate voltage independent part of series resistance.
|
|
12
|
ther2 (V)
|
Denominator of gate voltage independent part of series resistance.
|
|
13
|
then (1/V)
|
Velocity saturation parameter due to optical phonon scattering.
|
|
14
|
thep (1/V)
|
Velocity saturation parameter due to acoustic phonon scattering.
|
|
15
|
gthep
|
Velocity saturation factor due to acoustic phonon scattering.
|
|
16
|
theth (1/V3)
|
Coefficient of self-heating.
|
|
17
|
sdibl (1/V )
|
Drain-induced barrier lowering parameter.
|
|
18
|
dphi (V)
|
Parameter for short-channel subthreshold behavior.
|
|
19
|
ssf (1/V )
|
Static feedback parameter.
|
|
20
|
alp (m)
|
Characteristic length parameter for channel length modulation.
|
|
21
|
vp (V)
|
Characteristic voltage of channel-length modulation.
|
|
22
|
mexp
|
Smoothing factor.
|
|
23
|
phit (V)
|
Thermal voltage.
|
|
24
|
a1
|
Factor of the weak-avalanche current.
|
|
25
|
a2 (V)
|
Exponent of the weak-avalanche current.
|
|
26
|
a3
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
27
|
cox (F)
|
Gate-to-channel capacitance (* mult).
|
|
28
|
cgdo (F)
|
Gate-drain overlap capacitance (* mult).
|
|
29
|
cgso (F)
|
Gate-source overlap capacitance (* mult).
|
Operating-Point Parameters
|
1
|
ide (A)
|
Resistive drain current.
|
|
2
|
ige (A)
|
Resistive gate current.
|
|
3
|
ise (A)
|
Resistive source current.
|
|
4
|
ibe (A)
|
Resistive bulk current.
|
|
5
|
vds (V)
|
Drain-source voltage.
|
|
6
|
vgs (V)
|
Gate-source voltage.
|
|
7
|
vsb (V)
|
Source-bulk voltage.
|
|
8
|
ids (A)
|
Resistive drain current.
|
|
9
|
idb (A)
|
Resistive drain-bulk current.
|
|
10
|
isb (A)
|
Resistive source-bulk current.
|
|
11
|
iavl (A)
|
Substrate current.
|
|
12
|
pwr (W)
|
Power.
|
|
13
|
vto (V)
|
Threshold voltage at zero back-bias.
|
|
14
|
vts (V)
|
Vts.
|
|
15
|
vgt (V)
|
Effective gate drive including backbias and drain effects.
|
|
16
|
vdss (V)
|
Saturation voltage at actual bias.
|
|
17
|
vsat (V)
|
Saturation limit.
|
|
18
|
gm (S)
|
Transconductance (d ids / d vgs).
|
|
19
|
gmb (S)
|
Bulk transconductance (d ids / d vbs).
|
|
20
|
gds (S)
|
Output conductance (d ids / d vds).
|
|
21
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
22
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
23
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
24
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
25
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
26
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
27
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
28
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
29
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
30
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
31
|
css (F)
|
Capacitance (d qs / d vs).
|
|
32
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
33
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
34
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
35
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
36
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
37
|
u
|
Transistor gain (gm/gds).
|
|
38
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
39
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
40
|
keff (V )
|
Describes body effect at actual bias.
|
|
41
|
beff (S/V)
|
Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).
|
|
42
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1 O-24
|
etamobr M-26
|
sl2ko M-15
|
ther1 M-30
|
a1r M-52
|
fug OP-42
|
sl2vfb M-11
|
ther1 O-11
|
a2 O-25
|
gds OP-20
|
sla1 M-54
|
ther2 M-31
|
a2r M-56
|
gm OP-18
|
sla2 M-57
|
ther2 O-12
|
a3 O-26
|
gmb OP-19
|
sla3 M-60
|
thersq M-28
|
a3r M-59
|
gthep M-38
|
slko M-14
|
thesr O-7
|
alp O-20
|
gthep O-15
|
sltheth M-40
|
thesrr M-20
|
alpsq M-47
|
iavl OP-11
|
slvfb M-10
|
theth O-16
|
area I-4
|
ibe OP-4
|
ssf O-19
|
thethr M-39
|
beff OP-41
|
idb OP-9
|
ssfsq M-45
|
tnom M-66
|
bet O-6
|
ide OP-1
|
sta1 M-53
|
tox M-62
|
betsq M-18
|
ids OP-8
|
stthen M-33
|
tr M-64
|
cbb OP-36
|
ige OP-2
|
stthep M-36
|
tref M-65
|
cbd OP-33
|
isb OP-10
|
sttheph M-24
|
trise I-7
|
cbg OP-34
|
ise OP-3
|
stthesr M-21
|
trise M-68
|
cbs OP-35
|
keff OP-40
|
stvfb M-9
|
type M-1
|
cdb OP-24
|
ko O-4
|
swa1 M-55
|
u OP-37
|
cdd OP-21
|
kor M-13
|
swa2 M-58
|
vds OP-5
|
cdg OP-22
|
l I-2
|
swa3 M-61
|
vdss OP-16
|
cds OP-23
|
lap M-5
|
swalp M-48
|
vearly OP-39
|
cgb OP-28
|
le O-1
|
swetamob M-27
|
vfb O-3
|
cgd OP-25
|
ler M-2
|
swko M-16
|
vfbr M-8
|
cgdo O-28
|
lvar M-4
|
swssf M-46
|
vgs OP-6
|
cgg OP-26
|
m I-6
|
swthen M-34
|
vgt OP-15
|
cgs OP-27
|
mexp O-22
|
swthep M-37
|
vp M-49
|
cgso O-29
|
mexpl M-51
|
swtheph M-25
|
vp O-21
|
col M-63
|
mexpo M-50
|
swther M-29
|
vsat OP-17
|
cox O-27
|
mult I-3
|
swthesr M-22
|
vsb OP-7
|
csb OP-32
|
phib O-5
|
swtheth M-41
|
vto OP-13
|
csd OP-29
|
phibr M-17
|
swvfb M-12
|
vts OP-14
|
csg OP-30
|
phit O-23
|
then O-13
|
w I-1
|
css OP-31
|
pwr OP-12
|
thenr M-32
|
we O-2
|
dphi M-44
|
region I-5
|
thep O-14
|
wer M-3
|
dphi O-18
|
rout OP-38
|
theph O-8
|
wot M-7
|
dta M-67
|
sdibl O-17
|
thephr M-23
|
wvar M-6
|
etabet M-19
|
sdiblexp M-43
|
thepr M-35
|
|
etamob O-9
|
sdiblo M-42
|
ther O-10
|
|
Compact MOS-Transistor Distortion Model (mos1100)
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
5
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
6
|
m=1
|
alias of mult.
|
|
7
|
mos_region=SUBTHRESHOLD
|
|
|
8
|
diode_region=ON
|
|
|
9
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos1100 parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
MOS Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
ler=1e-06 m
|
Effective channel length of the reference transistor.
|
|
4
|
wer=1e-05 m
|
Effective channel width of the reference transistor.
|
|
5
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
6
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
7
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
8
|
wot=0 m
|
Effective channel width reduction per side.
|
|
9
|
tr=21 C
|
Reference temperature. Default set by option tnom.
|
|
10
|
vfbr=-1.05 V
|
Flat-band voltage for reference transistor.
|
|
11
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of vfb.
|
|
12
|
kor=0.5 V
|
Body effect coefficient for the reference transistor.
|
|
13
|
slko=0 V m
|
Coefficient of the length dependence of ko.
|
|
14
|
sl2ko=0 V m2
|
|
|
|
|
Second coefficient of the length dependence of ko.
|
|
15
|
swko=0 V m
|
Coefficient of the width dependence of ko.
|
|
16
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
17
|
phibr=0.95 V
|
Surface potential at strong inversion.
|
|
18
|
slphib=0 Vm
|
Coefficient of the length dependence of phib.
|
|
19
|
sl2phib=0 Vm2
|
Second coefficient of the length dependence of phib.
|
|
20
|
swphib=0 Vm
|
Coefficient of the width dependence of phib.
|
|
21
|
betsq=0.000371(n)/0.000115(p) A/V2
|
|
|
|
|
Gain factor for an infinite square transistor.
|
|
22
|
etabet=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
23
|
fbet1=0
|
Relative mobility decrease due to first lateral profile.
|
|
24
|
lp1=8e-07 m
|
Characteristic length of first lateral profile.
|
|
25
|
fbet2=0
|
Relative mobility decrease due to second lateral profile.
|
|
26
|
lp2=8e-07 m
|
Characteristic length of second lateral profile.
|
|
27
|
thesrr=0.4(n)/0.73(p) 1/V
|
|
|
|
|
Coefficient of the mobility reduction due to surface roughness scattering.
|
|
28
|
swthesr=0 m
|
Coefficient of the width dependence of thesr.
|
|
29
|
thephr=0.0129(n)/0.001(p) 1/V
|
|
|
|
|
Coefficient of the mobility reduction due to phonon scattering.
|
|
30
|
etaph=1.75
|
Exponent of the temperature dependence of theph.
|
|
31
|
swtheph=0 m
|
Coefficient of the width dependence of theph.
|
|
32
|
etamobr=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion/inversion charge.
|
|
33
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of etamob.
|
|
34
|
swetamob=0 m
|
Coefficient of the width dependence of etamob.
|
|
35
|
nur=1
|
Exponent of the field dependence of the mobility model minus 1.
|
|
36
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter nu.
|
|
37
|
therr=0.155(n)/0.08(p) 1/V
|
|
|
|
Coefficient of the series resistance.
|
|
38
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of ther.
|
|
39
|
swther=0 m
|
Coefficient of the width dependence of ther.
|
|
40
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
41
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
42
|
thesatr=0.5(n)/0.2(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
43
|
slthesat=1
|
Coefficient of length dependence of thesat.
|
|
44
|
thesatexp=1
|
Exponent of length dependence of thesat.
|
|
45
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of thesat.
|
|
46
|
swthesat=0 m
|
Coefficient of the width dependence of thesat.
|
|
47
|
thethr=0.001(n)/0.0005(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
48
|
thethexp=1
|
Exponent of the length dependence of theth.
|
|
49
|
swtheth=0 m
|
Coefficient of the width dependence of theth.
|
|
50
|
sdiblo=0.002(n)/0.001(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
51
|
sdiblexp=1.35
|
Exponent of the length dependence of sdibl.
|
|
52
|
mor=0
|
Parameter for short-channel subthreshold slope.
|
|
53
|
moexp=1.34
|
Exponent of the length dependence of mo.
|
|
54
|
ssfr=0.00625 1/V
|
|
|
|
|
Static feedback parameter.
|
|
55
|
slssf=1e-06 m
|
Coefficient of the length dependence of ssf.
|
|
56
|
swssf=0 m
|
Coefficient of the width dependence of ssf.
|
|
57
|
alpr=0.01
|
Factor of the channel length modulation.
|
|
58
|
slalp=1
|
Coefficient of the length dependence of alp.
|
|
59
|
alpexp=1
|
Exponent of the length dependence of alp.
|
|
60
|
swalp=0 m
|
Coefficient of the width dependence of alp.
|
|
61
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
62
|
lmin=1.5e-07 m
|
Minimum effective channel length in technology, used for calculation of smoothing factor m.
|
|
63
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
64
|
sta1=0 1/K
|
Coefficient of the temperature dependence of a1.
|
|
65
|
sla1=0 m
|
Coefficient of the length dependence of a1.
|
|
66
|
swa1=0 m
|
Coefficient of the width dependence of a1.
|
|
67
|
a2r=38 V
|
Exponent of the weak-avalanche current.
|
|
68
|
sla2=0 V m
|
Coefficient of the length dependence of a2.
|
|
69
|
swa2=0 V m
|
Coefficient of the width dependence of a2.
|
|
70
|
a3r=1
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
71
|
sla3=0 m
|
Coefficient of the length dependence of a3.
|
|
72
|
swa3=0 m
|
Coefficient of the width dependence of a3.
|
|
73
|
iginvr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
74
|
binv=48(n)/87.5(p) A/V2
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
75
|
igaccr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
76
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
77
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
78
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
79
|
igovr=0 A/V2
|
Gain factor for Source/Drain overlap gate tunneling current.
|
|
80
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
81
|
col=3.2e-10 F/m
|
Gate overlap capacitance per unit channel width.
|
|
82
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
83
|
ntr=1.66e-20 J
|
Coefficient of the thermal noise.
|
|
84
|
nfar=1.57e+22(n)/3.83e+23(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
85
|
nfbr=4.75e+08(n)/1.02e+08(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise.
|
|
86
|
nfcr=0(n)/7.3e-09(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
87
|
dta=0 K
|
Temperature offset of the device.
|
|
88
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
89
|
imax=1000 A
|
Explosion current.
|
|
90
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
91
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
92
|
tnom (C)
|
alias of tnom.
|
|
93
|
tref (C)
|
alias of tnom.
|
|
94
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flat-band voltage for the actual transistor.
|
|
2
|
ko (V )
|
Body-effect factor.
|
|
3
|
kpinv (1/V )
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
4
|
phib (V)
|
Surface potential at the onset of strong inversion.
|
|
5
|
bet (A/V2)
|
Gain factor.
|
|
6
|
thesr (1/V)
|
Mobility degradation parameter due to surface roughness scattering.
|
|
7
|
theph (1/V)
|
Mobility degradation parameter due to phonon scattering.
|
|
8
|
etamob
|
Effective field parameter for dependence on depletion charge.
|
|
9
|
nu
|
Exponent of field dependence of mobility model.
|
|
10
|
ther (1/V)
|
Coefficient of series resistance.
|
|
11
|
ther1 (V)
|
Numerator of gate voltage dependent part of series resistance.
|
|
12
|
ther2 (V)
|
Denominator of gate voltage dependent part of series resistance.
|
|
13
|
thesat (1/V)
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
14
|
theth (1/V3)
|
Coefficient of self-heating.
|
|
15
|
sdibl (1/V )
|
Drain-induced barrier lowering parameter.
|
|
16
|
mo (V)
|
Parameter for (short-channel) subthreshold slope.
|
|
17
|
ssf (1/V )
|
Static-feedback parameter.
|
|
18
|
alp
|
Factor of channel length modulation.
|
|
19
|
vp (V)
|
Characteristic voltage of channel-length modulation.
|
|
20
|
mexp
|
Smoothing factor.
|
|
21
|
phit (V)
|
Thermal voltage at the actual temperature.
|
|
22
|
a1
|
Factor of the weak-avalanche current.
|
|
23
|
a2 (V)
|
Exponent of the weak-avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
25
|
iginv (A/V2)
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
26
|
binv (A/V2)
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
27
|
igacc (A/V2)
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
28
|
bacc (V)
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
29
|
vfbov (V)
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
30
|
kov (V )
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
31
|
igov (A/V2)
|
Gain factor for Source/Drain overlap tunneling current.
|
|
32
|
cox (F)
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
33
|
cgdo (F)
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
34
|
cgso (F)
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
35
|
gatenoise
|
Flag for in/exclusion of induced gate thermal noise.
|
|
36
|
nt (J)
|
Thermal noise coefficient.
|
|
37
|
nfa (1/(Vm4))
|
First coefficient of the flicker noise.
|
|
38
|
nfb (1/(Vm2))
|
Second coefficient of the flicker noise.
|
|
39
|
nfc (1/V)
|
Third coefficient of the flicker noise.
|
|
40
|
tox (m)
|
Thickness of gate oxide layer.
|
|
41
|
int_s
|
|
|
42
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
u
|
Transistor gain (gm/gds).
|
|
39
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
40
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
41
|
keff (V )
|
Body effect parameter.
|
|
42
|
beff (A/V2)
|
Gain factor.
|
|
43
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
44
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
45
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
46
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
47
|
table_ids (A)
|
Current.
|
|
48
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
49
|
table_qg (Coul)
|
Charge at g node.
|
|
50
|
table_qd (Coul)
|
Charge at d node.
|
|
51
|
table_qb (Coul)
|
Charge at b node.
|
|
52
|
mos_region=SUBTHRESHOLD
|
|
|
53
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1 O-22
|
fug OP-43
|
nt O-36
|
table_vth OP-48
|
a1r M-63
|
gatenoise M-82
|
ntr M-83
|
theph O-7
|
a2 O-23
|
gatenoise O-35
|
nu O-9
|
thephr M-29
|
a2r M-67
|
gds OP-17
|
nuexp M-36
|
ther O-10
|
a3 O-24
|
gm OP-15
|
nur M-35
|
ther1 M-40
|
a3r M-70
|
gmb OP-16
|
paramchk M-2
|
ther1 O-11
|
alp O-18
|
iavl OP-2
|
phib O-4
|
ther2 M-41
|
alpexp M-59
|
ids OP-1
|
phibr M-17
|
ther2 O-12
|
alpr M-57
|
igacc O-27
|
phit O-21
|
therr M-37
|
bacc M-76
|
igaccr M-75
|
printscaled I-4
|
thesat O-13
|
bacc O-28
|
igb OP-5
|
region I-5
|
thesatexp M-44
|
beff OP-42
|
igd OP-4
|
rout OP-39
|
thesatr M-42
|
bet O-5
|
iginv O-25
|
sdibl O-15
|
thesr O-6
|
betsq M-21
|
iginvr M-73
|
sdiblexp M-51
|
thesrr M-27
|
binv M-74
|
igov O-31
|
sdiblo M-50
|
theth O-14
|
binv O-26
|
igovr M-79
|
simkitver M-94
|
thethexp M-48
|
cbb OP-33
|
igs OP-3
|
sl2ko M-14
|
thethr M-47
|
cbd OP-30
|
imax M-89
|
sl2phib M-19
|
tnom M-92
|
cbg OP-31
|
int_d O-42
|
sla1 M-65
|
tox M-80
|
cbs OP-32
|
int_s O-41
|
sla2 M-68
|
tox O-40
|
cdb OP-21
|
keff OP-41
|
sla3 M-71
|
tr M-9
|
cdd OP-18
|
ko O-2
|
slalp M-58
|
tref M-93
|
cdg OP-19
|
kor M-12
|
slko M-13
|
trise I-9
|
cds OP-20
|
kov M-78
|
slphib M-18
|
type M-88
|
cgb OP-25
|
kov O-30
|
slssf M-55
|
u OP-38
|
cgd OP-22
|
kpinv M-16
|
slthesat M-43
|
vbds M-91
|
cgdo O-33
|
kpinv O-3
|
sqrtsff OP-45
|
vbox M-90
|
cgdol OP-34
|
l I-2
|
sqrtsfw OP-44
|
vds OP-6
|
cgg OP-23
|
lap M-6
|
ssf O-17
|
vdss OP-13
|
cgs OP-24
|
leff OP-37
|
ssfr M-54
|
vearly OP-40
|
cgso O-34
|
ler M-3
|
sta1 M-64
|
vfb O-1
|
cgsol OP-35
|
level M-1
|
stetamob M-33
|
vfbov M-77
|
col M-81
|
lmin M-62
|
stvfb M-11
|
vfbov O-29
|
cox O-32
|
lp1 M-24
|
swa1 M-66
|
vfbr M-10
|
csb OP-29
|
lp2 M-26
|
swa2 M-69
|
vgs OP-7
|
csd OP-26
|
lvar M-5
|
swa3 M-72
|
vgt OP-12
|
csg OP-27
|
m I-6
|
swalp M-60
|
vp M-61
|
css OP-28
|
mexp O-20
|
swetamob M-34
|
vp O-19
|
diode_region I-8
|
mo O-16
|
swko M-15
|
vsat OP-14
|
diode_region OP-53
|
moexp M-53
|
swphib M-20
|
vsb OP-8
|
dta M-87
|
mor M-52
|
swssf M-56
|
vth OP-11
|
etabet M-22
|
mos_region I-7
|
swtheph M-31
|
vto OP-9
|
etamob O-8
|
mos_region OP-52
|
swther M-39
|
vts OP-10
|
etamobr M-32
|
mult I-1
|
swthesat M-46
|
w I-3
|
etaph M-30
|
nfa O-37
|
swthesr M-28
|
weff OP-36
|
etar M-38
|
nfar M-84
|
swtheth M-49
|
wer M-4
|
etasat M-45
|
nfb O-38
|
table_ids OP-47
|
wot M-8
|
fbet1 M-23
|
nfbr M-85
|
table_qb OP-51
|
wvar M-7
|
fbet2 M-25
|
nfc O-39
|
table_qd OP-50
|
|
fknee OP-46
|
nfcr M-86
|
table_qg OP-49
|
|
Compact MOS-Transistor Distortion Model (mos1100e)
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
4
|
m=1
|
Alias of mult.
|
|
5
|
mos_region=SUBTHRESHOLD
|
|
|
6
|
diode_region=ON
|
|
|
7
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos1100e parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
MOS Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vfb=-1.05 V
|
Flat-band voltage for the actual transistor.
|
|
4
|
ko=0.5 V
|
Body-effect factor.
|
|
5
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
6
|
phib=0.95 V
|
Surface potential at the onset of strong inversion.
|
|
7
|
bet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Gain factor.
|
|
8
|
thesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Mobility degradation parameter due to surface roughness scattering.
|
|
9
|
theph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Mobility degradation parameter due to phonon scattering.
|
|
10
|
etamob=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion charge.
|
|
11
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
12
|
ther=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of series resistance.
|
|
13
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
14
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
15
|
thesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
16
|
theth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
17
|
sdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
18
|
mo=0 V
|
Parameter for (short-channel) subthreshold slope.
|
|
19
|
ssf=0.012(n)/0.01(p) 1/V
|
|
|
|
Static-feedback parameter.
|
|
20
|
alp=0.025
|
Factor of channel length modulation.
|
|
21
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
22
|
mexp=5
|
Smoothing factor.
|
|
23
|
phit=0.0266 V
|
Thermal voltage at the actual temperature.
|
|
24
|
a1=6.02(n)/6.86(p)
|
|
|
|
|
Factor of the weak-avalanche current.
|
|
25
|
a2=38(n)/57.3(p) V
|
|
|
|
|
Exponent of the weak-avalanche current.
|
|
26
|
a3=0.641(n)/0.425(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
27
|
iginv=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
28
|
binv=48(n)/87.5(p) A/V2
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
29
|
igacc=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
30
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
31
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
32
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
33
|
igov=0 A/V2
|
Gain factor for Source/Drain overlap tunneling current.
|
|
34
|
cox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
35
|
cgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
36
|
cgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
37
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
38
|
nt=1.66e-20 J
|
Thermal noise coefficient.
|
|
39
|
nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
40
|
nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise.
|
|
41
|
nfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
42
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
43
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
44
|
imax=1000 A
|
Explosion current.
|
|
45
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
46
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
47
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flat-band voltage for the actual transistor.
|
|
2
|
ko (V )
|
Body-effect factor.
|
|
3
|
kpinv (1/V )
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
4
|
phib (V)
|
Surface potential at the onset of strong inversion.
|
|
5
|
bet (A/V2)
|
Gain factor.
|
|
6
|
thesr (1/V)
|
Mobility degradation parameter due to surface roughness scattering.
|
|
7
|
theph (1/V)
|
Mobility degradation parameter due to phonon scattering.
|
|
8
|
etamob
|
Effective field parameter for dependence on depletion charge.
|
|
9
|
nu
|
Exponent of field dependence of mobility model.
|
|
10
|
ther (1/V)
|
Coefficient of series resistance.
|
|
11
|
ther1 (V)
|
Numerator of gate voltage dependent part of series resistance.
|
|
12
|
ther2 (V)
|
Denominator of gate voltage dependent part of series resistance.
|
|
13
|
thesat (1/V)
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
14
|
theth (1/V3)
|
Coefficient of self-heating.
|
|
15
|
sdibl (1/V )
|
Drain-induced barrier lowering parameter.
|
|
16
|
mo (V)
|
Parameter for (short-channel) subthreshold slope.
|
|
17
|
ssf (1/V )
|
Static-feedback parameter.
|
|
18
|
alp
|
Factor of channel length modulation.
|
|
19
|
vp (V)
|
Characteristic voltage of channel-length modulation.
|
|
20
|
mexp
|
Smoothing factor.
|
|
21
|
phit (V)
|
Thermal voltage at the actual temperature.
|
|
22
|
a1
|
Factor of the weak-avalanche current.
|
|
23
|
a2 (V)
|
Exponent of the weak-avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
25
|
iginv (A/V2)
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
26
|
binv (A/V2)
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
27
|
igacc (A/V2)
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
28
|
bacc (V)
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
29
|
vfbov (V)
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
30
|
kov (V )
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
31
|
igov (A/V2)
|
Gain factor for Source/Drain overlap tunneling current.
|
|
32
|
cox (F)
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
33
|
cgdo (F)
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
34
|
cgso (F)
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
35
|
gatenoise
|
Flag for in/exclusion of induced gate thermal noise.
|
|
36
|
nt (J)
|
Thermal noise coefficient.
|
|
37
|
nfa (1/(Vm4))
|
First coefficient of the flicker noise.
|
|
38
|
nfb (1/(Vm2))
|
Second coefficient of the flicker noise.
|
|
39
|
nfc (1/V)
|
Third coefficient of the flicker noise.
|
|
40
|
tox (m)
|
Thickness of gate oxide layer.
|
|
41
|
int_s
|
|
|
42
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
u
|
Transistor gain (gm/gds).
|
|
37
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
38
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
39
|
keff (V )
|
Body effect parameter.
|
|
40
|
beff (A/V2)
|
Gain factor.
|
|
41
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
42
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
43
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
44
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
45
|
table_ids (A)
|
Current.
|
|
46
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
47
|
table_qg (Coul)
|
Charge at g node.
|
|
48
|
table_qd (Coul)
|
Charge at d node.
|
|
49
|
table_qb (Coul)
|
Charge at b node.
|
|
50
|
mos_region=SUBTHRESHOLD
|
|
|
|
|
|
|
51
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1 M-24
|
csg OP-27
|
mexp O-20
|
theph O-7
|
a1 O-22
|
css OP-28
|
mo M-18
|
ther M-12
|
a2 M-25
|
diode_region I-6
|
mo O-16
|
ther O-10
|
a2 O-23
|
diode_region OP-51
|
mos_region I-5
|
ther1 M-13
|
a3 M-26
|
etamob M-10
|
mos_region OP-50
|
ther1 O-11
|
a3 O-24
|
etamob O-8
|
mult I-1
|
ther2 M-14
|
alp M-20
|
fknee OP-44
|
nfa M-39
|
ther2 O-12
|
alp O-18
|
fug OP-41
|
nfa O-37
|
thesat M-15
|
bacc M-30
|
gatenoise M-37
|
nfb M-40
|
thesat O-13
|
bacc O-28
|
gatenoise O-35
|
nfb O-38
|
thesr M-8
|
beff OP-40
|
gds OP-17
|
nfc M-41
|
thesr O-6
|
bet M-7
|
gm OP-15
|
nfc O-39
|
theth M-16
|
bet O-5
|
gmb OP-16
|
nt M-38
|
theth O-14
|
binv M-28
|
iavl OP-2
|
nt O-36
|
tox M-42
|
binv O-26
|
ids OP-1
|
nu M-11
|
tox O-40
|
cbb OP-33
|
igacc M-29
|
nu O-9
|
trise I-7
|
cbd OP-30
|
igacc O-27
|
paramchk M-2
|
type M-43
|
cbg OP-31
|
igb OP-5
|
phib M-6
|
u OP-36
|
cbs OP-32
|
igd OP-4
|
phib O-4
|
vbds M-46
|
cdb OP-21
|
iginv M-27
|
phit M-23
|
vbox M-45
|
cdd OP-18
|
iginv O-25
|
phit O-21
|
vds OP-6
|
cdg OP-19
|
igov M-33
|
printscaled I-2
|
vdss OP-13
|
cds OP-20
|
igov O-31
|
region I-3
|
vearly OP-38
|
cgb OP-25
|
igs OP-3
|
rout OP-37
|
vfb M-3
|
cgd OP-22
|
imax M-44
|
sdibl M-17
|
vfb O-1
|
cgdo M-35
|
int_d O-42
|
sdibl O-15
|
vfbov M-31
|
cgdo O-33
|
int_s O-41
|
simkitver M-47
|
vfbov O-29
|
cgdol OP-34
|
keff OP-39
|
sqrtsff OP-43
|
vgs OP-7
|
cgg OP-23
|
ko M-4
|
sqrtsfw OP-42
|
vgt OP-12
|
cgs OP-24
|
ko O-2
|
ssf M-19
|
vp M-21
|
cgso M-36
|
kov M-32
|
ssf O-17
|
vp O-19
|
cgso O-34
|
kov O-30
|
table_ids OP-45
|
vsat OP-14
|
cgsol OP-35
|
kpinv M-5
|
table_qb OP-49
|
vsb OP-8
|
cox M-34
|
kpinv O-3
|
table_qd OP-48
|
vth OP-11
|
cox O-32
|
level M-1
|
table_qg OP-47
|
vto OP-9
|
csb OP-29
|
m I-4
|
table_vth OP-46
|
vts OP-10
|
csd OP-26
|
mexp M-22
|
theph M-9
|
|
MOS Model 11, Level 1101 (mos11010)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11010 parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
12
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
13
|
kor=0.5 V
|
Body effect coefficient for the reference transistor.
|
|
14
|
slko=0
|
Coefficient of the length dependence of KO.
|
|
15
|
sl2ko=0
|
Second coefficient of the length dependence of KO.
|
|
16
|
sl3ko=0
|
Third coefficient of the length dependence of KO.
|
|
17
|
sl3koexp=1
|
Exponent belonging to the third coefficient of the length dependence of KO.
|
|
18
|
swko=0
|
Coefficient of the width dependence of KO.
|
|
19
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
20
|
phibr=0.95 V
|
Surface potential at strong inversion.
|
|
21
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
22
|
slphib=0
|
Coefficient of the length dependence of PHIB.
|
|
23
|
sl2phib=0
|
Second coefficient of the length dependence of PHIB.
|
|
24
|
swphib=0
|
Coefficient of the width dependence of PHIB.
|
|
25
|
betsq=0.000371(n)/0.000115(p) A/V2
|
|
|
|
|
Gain factor for an infinite square transistor.
|
|
26
|
etabetr=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
27
|
sletabet=0
|
Coefficient of length dependence of ETABETR.
|
|
28
|
fbet1=0
|
Relative mobility decrease due to first lateral profile.
|
|
29
|
lp1=8e-07 m
|
Characteristic length of first lateral profile.
|
|
30
|
fbet2=0
|
Relative mobility decrease due to second lateral profile.
|
|
31
|
lp2=8e-07 m
|
Characteristic length of second lateral profile.
|
|
32
|
thesrr=0.4(n)/0.73(p) 1/V
|
|
|
|
|
Coefficient of the mobility reduction due to surface roughness scattering.
|
|
33
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
34
|
swthesr=0
|
Coefficient of the width dependence of THESR.
|
|
35
|
thephr=0.0129(n)/0.001(p) 1/V
|
|
|
|
|
Coefficient of the mobility reduction due to phonon scattering.
|
|
36
|
etaph=1.35(n)/3.75(p)
|
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
37
|
swtheph=0
|
Coefficient of the width dependence of THEPH.
|
|
38
|
etamobr=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion/inversion charge.
|
|
39
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
40
|
swetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
41
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
42
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
43
|
therr=0.155(n)/0.08(p) 1/V
|
|
|
|
|
Coefficient of the series resistance.
|
|
44
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
45
|
swther=0
|
Coefficient of the width dependence of THER.
|
|
46
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
47
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
48
|
thesatr=0.5(n)/0.2(p) 1/V
|
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
49
|
etasat=1.04(n)/0.86(p)
|
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
50
|
slthesat=1
|
Coefficient of length dependence of THESAT.
|
|
51
|
thesatexp=1
|
Exponent of length dependence of THESAT.
|
|
52
|
swthesat=0
|
Coefficient of the width dependence of THESAT.
|
|
53
|
thethr=0.001(n)/0.0005(p) 1/V3
|
|
|
|
|
Coefficient of self-heating.
|
|
54
|
thethexp=1
|
Exponent of the length dependence of THETH.
|
|
55
|
swtheth=0
|
Coefficient of the width dependence of THETH.
|
|
56
|
sdiblo=0.0001 1/V
|
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
57
|
sdiblexp=1.35
|
Exponent of the length dependence of SDIBL.
|
|
58
|
moo=0
|
Parameter for short-channel subthreshold slope.
|
|
59
|
mor=0
|
Parameter for short-channel subthreshold slope per unit length.
|
|
60
|
moexp=1.34
|
Exponent of the length dependence of MO.
|
|
61
|
ssfr=0.00625 1/V
|
|
|
|
|
Static feedback parameter.
|
|
62
|
slssf=1
|
Coefficient of the length dependence of SSF.
|
|
63
|
swssf=0
|
Coefficient of the width dependence of SSF.
|
|
64
|
alpr=0.01
|
Factor of the channel length modulation.
|
|
65
|
slalp=1
|
Coefficient of the length dependence of ALP.
|
|
66
|
alpexp=1
|
Exponent of the length dependence of ALP.
|
|
67
|
swalp=0
|
Coefficient of the width dependence of ALP.
|
|
68
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
69
|
lmin=1.5e-07 m
|
Minimum effective channel length in technology, used for calculation of smoothing factor m.
|
|
70
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
71
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
72
|
sla1=0
|
Coefficient of the length dependence of A1.
|
|
73
|
swa1=0
|
Coefficient of the width dependence of A1.
|
|
74
|
a2r=38 V
|
Exponent of the weak-avalanche current.
|
|
75
|
sla2=0
|
Coefficient of the length dependence of A2.
|
|
76
|
swa2=0
|
Coefficient of the width dependence of A2.
|
|
77
|
a3r=1
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
78
|
sla3=0
|
Coefficient of the length dependence of A3.
|
|
79
|
swa3=0
|
Coefficient of the width dependence of A3.
|
|
80
|
iginvr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
81
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
82
|
igaccr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
83
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
84
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
85
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
86
|
igovr=0 A/V2
|
Gain factor for Source/Drain overlap gate tunneling current.
|
|
87
|
agidlr=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
88
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
89
|
stbgidl=-0.000364 V/K
|
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
90
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
91
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
92
|
col=3.2e-16 F
|
Gate overlap capacitance for a channel width of 1 um.
|
|
93
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
94
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
95
|
nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)
|
|
|
|
|
First coefficient of the flicker noise for a channel area of 1 um^2.
|
|
96
|
nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)
|
|
|
|
|
Second coefficient of the flicker noise for a channel area of 1 um^2.
|
|
97
|
nfcr=0(n)/7.3e-08(p) 1/V
|
|
|
|
|
Third coefficient of the flicker noise for a channel area of 1 um^2.
|
|
98
|
dta=0 K
|
Temperature offset of the device.
|
|
99
|
rgo=0 Ω
|
Gate resistance.
|
|
100
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
101
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
102
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
103
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
104
|
binning=0
|
flag for eldo model.
|
|
105
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
106
|
imax=1000 A
|
Explosion current.
|
|
107
|
tnom (C)
|
alias of tnom.
|
|
108
|
tref (C)
|
alias of tnom.
|
|
109
|
simkitver=3.4
|
|
|
110
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
49
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
50
|
table_ids (A)
|
Current.
|
|
51
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
52
|
table_qg (Coul)
|
Charge at g node.
|
|
53
|
table_qd (Coul)
|
Charge at d node.
|
|
54
|
table_qb (Coul)
|
Charge at b node.
|
|
55
|
mos_region=SUBTHRESHOLD
|
|
|
|
|
|
|
56
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
a1r M-77
|
fug OP-44
|
rint M-107
|
tdelay M-11
|
|
a2r M-81
|
gatenoise M-100
|
rout OP-40
|
tempeff O-1
|
|
a3r M-84
|
gds OP-17
|
rshg M-109
|
thephr M-42
|
|
agidlr M-94
|
gm OP-15
|
rvpoly M-108
|
ther1 M-53
|
|
alpexp M-73
|
gmb OP-16
|
sdiblexp M-64
|
ther2 M-54
|
|
alpr M-71
|
iavl OP-2
|
sdiblo M-63
|
therr M-50
|
|
bacc M-90
|
ids OP-1
|
sl2ko M-22
|
thesatexp M-58
|
|
beff OP-43
|
igaccr M-89
|
sl2phib M-30
|
thesatr M-55
|
|
betsq M-32
|
igb OP-5
|
sl3ko M-23
|
thesrr M-39
|
|
bgidl M-95
|
igd OP-4
|
sl3koexp M-24
|
thethexp M-61
|
|
binning M-112
|
iginvr M-87
|
sla1 M-79
|
thethr M-60
|
|
binv M-88
|
igovr M-93
|
sla2 M-82
|
tmin M-10
|
|
cbb OP-33
|
igs OP-3
|
sla3 M-85
|
tnom M-114
|
|
cbd OP-30
|
keff OP-42
|
slalp M-72
|
tox M-98
|
|
cbg OP-31
|
kor M-20
|
sletabet M-34
|
tr M-17
|
|
cbs OP-32
|
kov M-92
|
slko M-21
|
tref M-115
|
|
cdb OP-21
|
kpinv M-26
|
slphib M-29
|
trise I-8
|
|
cdd OP-18
|
l I-2
|
slssf M-69
|
type M-113
|
|
cdg OP-19
|
lap M-14
|
slthesat M-57
|
u OP-39
|
|
cds OP-20
|
leff OP-37
|
sqrtsff OP-46
|
vballmsg M-9
|
|
cgb OP-25
|
level M-1
|
sqrtsfw OP-45
|
vbdbhigh M-6
|
|
cgd OP-22
|
lmin M-76
|
ssfr M-68
|
vbdblow M-5
|
|
cgdol OP-34
|
lp1 M-36
|
sta1 M-78
|
vbds M-4
|
|
cgg OP-23
|
lp2 M-38
|
stbgidl M-96
|
vbox M-3
|
|
cgidl M-97
|
lvar M-13
|
stetamob M-46
|
vbsbhigh M-8
|
|
cgs OP-24
|
m I-10
|
stop M-12
|
vbsblow M-7
|
|
cgsol OP-35
|
meff O-2
|
stphib M-28
|
vds OP-6
|
|
col M-99
|
moexp M-67
|
stvfb M-19
|
vdss OP-13
|
|
compatible M-116
|
moo M-65
|
swa1 M-80
|
vearly OP-41
|
|
csb OP-29
|
mor M-66
|
swa2 M-83
|
vfb M-18
|
|
csd OP-26
|
mos_region OP-55
|
swa3 M-86
|
vfbov M-91
|
|
csg OP-27
|
mult I-1
|
swalp M-74
|
vgs OP-7
|
|
css OP-28
|
nf I-4
|
swetamob M-47
|
vgt OP-12
|
|
ctype OP-48
|
nfar M-102
|
swko M-25
|
von OP-49
|
|
diode_region OP-56
|
nfbr M-103
|
swphib M-31
|
vp M-75
|
|
dlsil M-110
|
nfcr M-104
|
swssf M-70
|
vsat OP-14
|
|
dta M-105
|
ngcon I-5
|
swtheph M-44
|
vsb OP-8
|
|
etabetr M-33
|
nt M-101
|
swther M-52
|
vth OP-11
|
|
etamobr M-45
|
nu M-48
|
swthesat M-59
|
vto OP-9
|
|
etaph M-43
|
nuexp M-49
|
swthesr M-41
|
vts OP-10
|
|
etar M-51
|
paramchk M-2
|
swtheth M-62
|
w I-3
|
|
etasat M-56
|
phibr M-27
|
table_ids OP-50
|
weff OP-36
|
|
etasr M-40
|
printscaled I-7
|
table_qb OP-54
|
wot M-16
|
|
fbet1 M-35
|
region I-9
|
table_qd OP-53
|
wvar M-15
|
|
fbet2 M-37
|
rg OP-38
|
table_qg OP-52
|
xgw I-6
|
|
fknee OP-47
|
rgo M-106
|
table_vth OP-51
|
xpart M-111
|
MOS Model 11, Level 1101 (mos11010t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
|
|
|
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11010t parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
12
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
13
|
kor=0.5 V
|
Body effect coefficient for the reference transistor.
|
|
14
|
slko=0
|
Coefficient of the length dependence of KO.
|
|
15
|
sl2ko=0
|
Second coefficient of the length dependence of KO.
|
|
16
|
sl3ko=0
|
Third coefficient of the length dependence of KO.
|
|
17
|
sl3koexp=1
|
Exponent belonging to the third coefficient of the length dependence of KO.
|
|
18
|
swko=0
|
Coefficient of the width dependence of KO.
|
|
19
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
20
|
phibr=0.95 V
|
Surface potential at strong inversion.
|
|
21
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
22
|
slphib=0
|
Coefficient of the length dependence of PHIB.
|
|
23
|
sl2phib=0
|
Second coefficient of the length dependence of PHIB.
|
|
24
|
swphib=0
|
Coefficient of the width dependence of PHIB.
|
|
25
|
betsq=0.000371(n)/0.000115(p) A/V2
|
|
|
|
Gain factor for an infinite square transistor.
|
|
26
|
etabetr=1.3(n)/0.5(p)
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
27
|
sletabet=0
|
Coefficient of length dependence of ETABETR.
|
|
28
|
fbet1=0
|
Relative mobility decrease due to first lateral profile.
|
|
29
|
lp1=8e-07 m
|
Characteristic length of first lateral profile.
|
|
30
|
fbet2=0
|
Relative mobility decrease due to second lateral profile.
|
|
31
|
lp2=8e-07 m
|
Characteristic length of second lateral profile.
|
|
32
|
thesrr=0.4(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to surface roughness scattering.
|
|
33
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
34
|
swthesr=0
|
Coefficient of the width dependence of THESR.
|
|
35
|
thephr=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to phonon scattering.
|
|
36
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
37
|
swtheph=0
|
Coefficient of the width dependence of THEPH.
|
|
38
|
etamobr=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion/inversion charge.
|
|
39
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
40
|
swetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
41
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
42
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
43
|
therr=0.155(n)/0.08(p) 1/V
|
|
|
|
Coefficient of the series resistance.
|
|
44
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
45
|
swther=0
|
Coefficient of the width dependence of THER.
|
|
46
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
47
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
48
|
thesatr=0.5(n)/0.2(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
49
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
50
|
slthesat=1
|
Coefficient of length dependence of THESAT.
|
|
51
|
thesatexp=1
|
Exponent of length dependence of THESAT.
|
|
52
|
swthesat=0
|
Coefficient of the width dependence of THESAT.
|
|
53
|
thethr=0.001(n)/0.0005(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
54
|
thethexp=1
|
Exponent of the length dependence of THETH.
|
|
55
|
swtheth=0
|
Coefficient of the width dependence of THETH.
|
|
56
|
sdiblo=0.0001 1/V
|
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
57
|
sdiblexp=1.35
|
Exponent of the length dependence of SDIBL.
|
|
58
|
moo=0
|
Parameter for short-channel subthreshold slope.
|
|
59
|
mor=0
|
Parameter for short-channel subthreshold slope per unit length.
|
|
60
|
moexp=1.34
|
Exponent of the length dependence of MO.
|
|
61
|
ssfr=0.00625 1/V
|
|
|
|
|
Static feedback parameter.
|
|
62
|
slssf=1
|
Coefficient of the length dependence of SSF.
|
|
63
|
swssf=0
|
Coefficient of the width dependence of SSF.
|
|
64
|
alpr=0.01
|
Factor of the channel length modulation.
|
|
65
|
slalp=1
|
Coefficient of the length dependence of ALP.
|
|
66
|
alpexp=1
|
Exponent of the length dependence of ALP.
|
|
67
|
swalp=0
|
Coefficient of the width dependence of ALP.
|
|
68
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
69
|
lmin=1.5e-07 m
|
Minimum effective channel length in technology, used for calculation of smoothing factor m.
|
|
70
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
71
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
72
|
sla1=0
|
Coefficient of the length dependence of A1.
|
|
73
|
swa1=0
|
Coefficient of the width dependence of A1.
|
|
74
|
a2r=38 V
|
Exponent of the weak-avalanche current.
|
|
75
|
sla2=0
|
Coefficient of the length dependence of A2.
|
|
76
|
swa2=0
|
Coefficient of the width dependence of A2.
|
|
77
|
a3r=1
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
78
|
sla3=0
|
Coefficient of the length dependence of A3.
|
|
79
|
swa3=0
|
Coefficient of the width dependence of A3.
|
|
80
|
iginvr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
81
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
82
|
igaccr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
83
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
84
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
85
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
86
|
igovr=0 A/V2
|
Gain factor for Source/Drain overlap gate tunneling current.
|
|
87
|
agidlr=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
88
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
89
|
stbgidl=-0.000364 V/K
|
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
90
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
91
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
92
|
col=3.2e-16 F
|
Gate overlap capacitance for a channel width of 1 um.
|
|
93
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
94
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
95
|
nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise for a channel area of 1 um^2.
|
|
96
|
nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise for a channel area of 1 um^2.
|
|
97
|
nfcr=0(n)/7.3e-08(p) 1/V
|
|
|
|
Third coefficient of the flicker noise for a channel area of 1 um^2.
|
|
98
|
dta=0 K
|
Temperature offset of the device.
|
|
99
|
rgo=0 Ω
|
Gate resistance.
|
|
100
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
101
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
102
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
103
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
104
|
rth=300 K/W
|
Thermal resistance.
|
|
105
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
106
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
107
|
binning=0
|
flag for eldo model.
|
|
108
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
109
|
imax=1000 A
|
Explosion current.
|
|
110
|
tnom (C)
|
alias of tnom.
|
|
111
|
tref (C)
|
alias of tnom.
|
|
112
|
simkitver=3.4
|
|
|
113
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
Pdiss (W)
|
Dissipation.
|
|
49
|
TK (K)
|
Actual device temperature.
|
|
50
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
51
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
52
|
table_ids (A)
|
Current.
|
|
53
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
54
|
table_qg (Coul)
|
Charge at g node.
|
|
55
|
table_qd (Coul)
|
Charge at d node.
|
|
56
|
table_qb (Coul)
|
Charge at b node.
|
|
57
|
pwr (W)
|
Power.
|
|
58
|
mos_region
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
59
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-48
|
fbet2 M-37
|
rgo M-106
|
tdelay M-11
|
|
TK OP-49
|
fknee OP-47
|
rint M-107
|
tempeff O-1
|
|
a1r M-77
|
fug OP-44
|
rout OP-40
|
thephr M-42
|
|
a2r M-81
|
gatenoise M-100
|
rshg M-109
|
ther1 M-53
|
|
a3r M-84
|
gds OP-17
|
rth M-112
|
ther2 M-54
|
|
agidlr M-94
|
gm OP-15
|
rvpoly M-108
|
therr M-50
|
|
alpexp M-73
|
gmb OP-16
|
sdiblexp M-64
|
thesatexp M-58
|
|
alpr M-71
|
iavl OP-2
|
sdiblo M-63
|
thesatr M-55
|
|
ath M-114
|
ids OP-1
|
sl2ko M-22
|
thesrr M-39
|
|
bacc M-90
|
igaccr M-89
|
sl2phib M-30
|
thethexp M-61
|
|
beff OP-43
|
igb OP-5
|
sl3ko M-23
|
thethr M-60
|
|
betsq M-32
|
igd OP-4
|
sl3koexp M-24
|
tmin M-10
|
|
bgidl M-95
|
iginvr M-87
|
sla1 M-79
|
tnom M-117
|
|
binning M-115
|
igovr M-93
|
sla2 M-82
|
tox M-98
|
|
binv M-88
|
igs OP-3
|
sla3 M-85
|
tr M-17
|
|
cbb OP-33
|
keff OP-42
|
slalp M-72
|
tref M-118
|
|
cbd OP-30
|
kor M-20
|
sletabet M-34
|
trise I-8
|
|
cbg OP-31
|
kov M-92
|
slko M-21
|
type M-116
|
|
cbs OP-32
|
kpinv M-26
|
slphib M-29
|
u OP-39
|
|
cdb OP-21
|
l I-2
|
slssf M-69
|
vballmsg M-9
|
|
cdd OP-18
|
lap M-14
|
slthesat M-57
|
vbdbhigh M-6
|
|
cdg OP-19
|
leff OP-37
|
sqrtsff OP-46
|
vbdblow M-5
|
|
cds OP-20
|
level M-1
|
sqrtsfw OP-45
|
vbds M-4
|
|
cgb OP-25
|
lmin M-76
|
ssfr M-68
|
vbox M-3
|
|
cgd OP-22
|
lp1 M-36
|
sta1 M-78
|
vbsbhigh M-8
|
|
cgdol OP-34
|
lp2 M-38
|
stbgidl M-96
|
vbsblow M-7
|
|
cgg OP-23
|
lvar M-13
|
stetamob M-46
|
vds OP-6
|
|
cgidl M-97
|
m I-10
|
stop M-12
|
vdss OP-13
|
|
cgs OP-24
|
meff O-2
|
stphib M-28
|
vearly OP-41
|
|
cgsol OP-35
|
moexp M-67
|
stvfb M-19
|
vfb M-18
|
|
col M-99
|
moo M-65
|
swa1 M-80
|
vfbov M-91
|
|
compatible M-119
|
mor M-66
|
swa2 M-83
|
vgs OP-7
|
|
csb OP-29
|
mos_region OP-58
|
swa3 M-86
|
vgt OP-12
|
|
csd OP-26
|
mult I-1
|
swalp M-74
|
von OP-51
|
|
csg OP-27
|
nf I-4
|
swetamob M-47
|
vp M-75
|
|
css OP-28
|
nfar M-102
|
swko M-25
|
vsat OP-14
|
|
cth M-113
|
nfbr M-103
|
swphib M-31
|
vsb OP-8
|
|
ctype OP-50
|
nfcr M-104
|
swssf M-70
|
vth OP-11
|
|
diode_region OP-59
|
ngcon I-5
|
swtheph M-44
|
vto OP-9
|
|
dlsil M-110
|
nt M-101
|
swther M-52
|
vts OP-10
|
|
dta M-105
|
nu M-48
|
swthesat M-59
|
w I-3
|
|
etabetr M-33
|
nuexp M-49
|
swthesr M-41
|
weff OP-36
|
|
etamobr M-45
|
paramchk M-2
|
swtheth M-62
|
wot M-16
|
|
etaph M-43
|
phibr M-27
|
table_ids OP-52
|
wvar M-15
|
|
etar M-51
|
printscaled I-7
|
table_qb OP-56
|
xgw I-6
|
|
etasat M-56
|
pwr OP-57
|
table_qd OP-55
|
xpart M-111
|
|
etasr M-40
|
region I-9
|
table_qg OP-54
|
|
|
fbet1 M-35
|
rg OP-38
|
table_vth OP-53
|
|
MOS Model 11, Level 1101 (mos11011)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11011 parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
lmin=0 m
|
Device length low limit for binning selection.
|
|
12
|
lmax=1 m
|
Device length high limit for binning selection.
|
|
13
|
wmin=0 m
|
Device width low limit for binning selection.
|
|
14
|
wmax=1 m
|
Device width high limit for binning selection.
|
|
15
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
16
|
poko=0.5 V
|
Coefficient for the geometry independent part of KO.
|
|
17
|
plko=0 V
|
Coefficient for the length dependence of KO.
|
|
18
|
pwko=0 V
|
Coefficient for the width dependence of KO.
|
|
19
|
plwko=0 V
|
Coefficient for the length times width dependence of KO.
|
|
20
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
21
|
pophib=0.95 V
|
Coefficient for the geometric independent part of PHIB.
|
|
22
|
plphib=0 V
|
Coefficient for the length dependence of PHIB.
|
|
23
|
pwphib=0 V
|
Coefficient for the width dependence of PHIB.
|
|
24
|
plwphib=0 V
|
Coefficient for the length times width dependence of PHIB.
|
|
25
|
pobet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Coefficient for the geometry independent part of BET.
|
|
26
|
plbet=0 A/V2
|
Coefficient for the length dependence of BET.
|
|
27
|
pwbet=0 A/V2
|
Coefficient for the width dependence of BET.
|
|
28
|
plwbet=0 A/V2
|
Coefficient for the width over length dependence of BET.
|
|
29
|
pothesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESR.
|
|
30
|
plthesr=0 1/V
|
Coefficient of the length dependence of THESR.
|
|
31
|
pwthesr=0 1/V
|
Coefficient of the width dependence of THESR.
|
|
32
|
plwthesr=0 1/V
|
Coefficient of the length times width dependence of THESR.
|
|
33
|
potheph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THEPH.
|
|
34
|
pltheph=0 1/V
|
Coefficient of the length dependence of THEPH.
|
|
35
|
pwtheph=0 1/V
|
Coefficient of the width dependence of THEPH.
|
|
36
|
plwtheph=0 1/V
|
Coefficient of the length times width dependence of THEPH.
|
|
37
|
poetamob=1.4(n)/3(p)
|
|
|
|
|
Coefficient of the geometry independent part of ETAMOB.
|
|
38
|
pletamob=0
|
Coefficient of the length dependence of ETAMOB.
|
|
39
|
pwetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
40
|
plwetamob=0
|
Coefficient of the length times width dependence of ETAMOB.
|
|
41
|
pother=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THER.
|
|
42
|
plther=0 1/V
|
Coefficient of the length dependence of THER.
|
|
43
|
pwther=0 1/V
|
Coefficient of the width dependence of THER.
|
|
44
|
plwther=0 1/V
|
Coefficient of the length times width dependence of THER.
|
|
45
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
46
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
47
|
pothesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESAT.
|
|
48
|
plthesat=0 1/V
|
Coefficient of the length dependence of THESAT.
|
|
49
|
pwthesat=0 1/V
|
Coefficient of the width dependence of THESAT.
|
|
50
|
plwthesat=0 1/V
|
Coefficient of the length times width dependence of THESAT.
|
|
51
|
potheth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of the geometry independent part of THETH.
|
|
52
|
pltheth=0 1/V3
|
Coefficient of the length dependence of THETH.
|
|
53
|
pwtheth=0 1/V3
|
Coefficient of the width dependence of THETH.
|
|
54
|
plwtheth=0 1/V3
|
Coefficient of the length times width dependence of THETH.
|
|
55
|
posdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SDIBL.
|
|
56
|
plsdibl=0 1/V
|
|
|
|
|
Coefficient of the length dependence of SDIBL.
|
|
57
|
pwsdibl=0 1/V
|
|
|
|
|
Coefficient of the width dependence of SDIBL.
|
|
58
|
plwsdibl=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SDIBL.
|
|
59
|
pomo=0
|
Coefficient of the geometry independent part of MO.
|
|
60
|
plmo=0
|
Coefficient of the length dependence of MO.
|
|
61
|
pwmo=0
|
Coefficient of the width dependence of MO.
|
|
62
|
plwmo=0
|
Coefficient of the length times width dependence of MO.
|
|
63
|
possf=0.012(n)/0.01(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SSF.
|
|
64
|
plssf=0 1/V
|
Coefficient of the length dependence of SSF.
|
|
65
|
pwssf=0 1/V
|
Coefficient of the width dependence of SSF.
|
|
66
|
plwssf=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SSF.
|
|
67
|
poalp=0.025
|
Coefficient of the geometry independent part of ALP.
|
|
68
|
plalp=0
|
Coefficient of the length dependence of ALP.
|
|
69
|
pwalp=0
|
Coefficient of the width dependence of ALP.
|
|
70
|
plwalp=0
|
Coefficient of the length times width dependence of ALP.
|
|
71
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
72
|
pomexp=0.2
|
Coefficient of the geometry independent part of MEXP.
|
|
73
|
plmexp=0
|
Coefficient of the length dependence of MEXP.
|
|
74
|
pwmexp=0
|
Coefficient of the width dependence of MEXP.
|
|
75
|
plwmexp=0
|
Coefficient of the length times width dependence of MEXP.
|
|
76
|
poa1=6.02(n)/6.86(p)
|
|
|
|
|
Coefficient of the geometry independent part of A1.
|
|
77
|
pla1=0
|
Coefficient of the length dependence of A1.
|
|
78
|
pwa1=0
|
Coefficient of the width dependence of A1.
|
|
79
|
plwa1=0
|
Coefficient of the length times width dependence of A1.
|
|
80
|
poa2=38(n)/57.3(p) V
|
|
|
|
|
Coefficient of the geometry independent part of A2.
|
|
81
|
pla2=0 V
|
Coefficient of the length dependence of A2.
|
|
82
|
pwa2=0 V
|
Coefficient of the width dependence of A2.
|
|
83
|
plwa2=0 V
|
Coefficient of the length times width dependence of A2.
|
|
84
|
poa3=0.641(n)/0.425(p)
|
|
|
|
Coefficient of the geometry independent part of A3.
|
|
85
|
pla3=0
|
Coefficient of the length dependence of A3.
|
|
86
|
pwa3=0
|
Coefficient of the width dependence of A3.
|
|
87
|
plwa3=0
|
Coefficient of the length times width dependence of A3.
|
|
88
|
poiginv=0 A/V2
|
Coefficient of the geometry independent part of IGINV.
|
|
89
|
pliginv=0 A/V2
|
Coefficient of the length dependence of IGINV.
|
|
90
|
pwiginv=0 A/V2
|
Coefficient of the width dependence of IGINV.
|
|
91
|
plwiginv=0 A/V2
|
Coefficient of the length times width dependence of IGINV.
|
|
92
|
pobinv=48(n)/87.5(p) V
|
|
|
|
Coefficient of the geometry independent part of BINV.
|
|
93
|
plbinv=0 V
|
Coefficient of the length dependence of BINV.
|
|
94
|
pwbinv=0 V
|
Coefficient of the width dependence of BINV.
|
|
95
|
plwbinv=0 V
|
Coefficient of the length times width dependence of BINV.
|
|
96
|
poigacc=0 A/V2
|
Coefficient of the geometry independent part of IGACC.
|
|
97
|
pligacc=0 A/V2
|
Coefficient of the length dependence of IGACC.
|
|
98
|
pwigacc=0 A/V2
|
Coefficient of the width dependence of IGACC.
|
|
99
|
plwigacc=0 A/V2
|
Coefficient of the length times width dependence of IGACC.
|
|
100
|
pobacc=48 V
|
Coefficient of the geometry independent part of BACC.
|
|
101
|
plbacc=0 V
|
Coefficient of the length dependence of BACC.
|
|
102
|
pwbacc=0 V
|
Coefficient of the width dependence of BACC.
|
|
103
|
plwbacc=0 V
|
Coefficient of the length times width dependence of BACC.
|
|
104
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
105
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
106
|
poigov=0 A/V2
|
Coefficient of the geometry independent part of IGOV.
|
|
107
|
pligov=0 A/V2
|
Coefficient of the length dependence of IGOV.
|
|
108
|
pwigov=0 A/V2
|
Coefficient of the width dependence of IGOV.
|
|
109
|
plwigov=0 A/V2
|
Coefficient of the length times width dependence of IGOV.
|
|
110
|
poagidl=0 A/V3
|
Coefficient of the geometry independent part of AGIDL.
|
|
111
|
plagidl=0 A/V3
|
Coefficient of the length dependence of AGIDL.
|
|
112
|
pwagidl=0 A/V3
|
Coefficient of the width dependence of AGIDL.
|
|
113
|
plwagidl=0 A/V3
|
Coefficient of the length times width dependence of AGIDL.
|
|
114
|
pobgidl=41 V
|
Coefficient of the geometry independent part of BGIDL.
|
|
115
|
plbgidl=0 V
|
Coefficient of the length dependence of BGIDL.
|
|
116
|
pwbgidl=0 V
|
Coefficient of the width dependence of BGIDL.
|
|
117
|
plwbgidl=0 V
|
Coefficient of the length times width dependence of BGIDL.
|
|
118
|
pocgidl=0
|
Coefficient of the geometry independent part of CGIDL.
|
|
119
|
plcgidl=0
|
Coefficient of the length dependence of CGIDL.
|
|
120
|
pwcgidl=0
|
Coefficient of the width dependence of CGIDL.
|
|
121
|
plwcgidl=0
|
Coefficient of the length times width dependence of CGIDL.
|
|
122
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
123
|
pocox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Coefficient of the geometry independent part of COX.
|
|
124
|
plcox=0 F
|
Coefficient of the length dependence of COX.
|
|
125
|
pwcox=0 F
|
Coefficient of the width dependence of COX.
|
|
126
|
plwcox=0 F
|
Coefficient of the length times width dependence of COX.
|
|
127
|
pocgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
|
Coefficient of the geometry independent part of CGDO.
|
|
128
|
plcgdo=0 F
|
Coefficient of the length dependence of CGDO.
|
|
129
|
pwcgdo=0 F
|
Coefficient of the width dependence of CGDO.
|
|
130
|
plwcgdo=0 F
|
Coefficient of the length time width dependence of CGDO.
|
|
131
|
pocgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGSO.
|
|
132
|
plcgso=0 F
|
Coefficient of the length dependence of CGSO.
|
|
133
|
pwcgso=0 F
|
Coefficient of the width dependence of CGSO.
|
|
134
|
plwcgso=0 F
|
Coefficient of the length times width dependence of CGSO.
|
|
135
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
136
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
137
|
ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4
|
|
|
|
Coefficient of the geometry independent part of NFA.
|
|
138
|
plnfa=0 1/V m4
|
Coefficient of the length dependence of NFA.
|
|
139
|
pwnfa=0 1/V m4
|
Coefficient of the width dependence of NFA.
|
|
140
|
plwnfa=0 1/V m4
|
Coefficient of the length times width dependence of NFA.
|
|
141
|
ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2
|
|
|
|
Coefficient of the geometry independent part of NFB.
|
|
142
|
plnfb=0 1/V m2
|
Coefficient of the length dependence of NFB.
|
|
143
|
pwnfb=0 1/V m2
|
Coefficient of the width dependence of NFB.
|
|
144
|
plwnfb=0 1/V m2
|
Coefficient of the length times width dependence of NFB.
|
|
145
|
ponfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of NFC.
|
|
146
|
plnfc=0 1/V
|
Coefficient of the length dependence of NFC.
|
|
147
|
pwnfc=0 1/V
|
Coefficient of the width dependence of NFC.
|
|
148
|
plwnfc=0 1/V
|
Coefficient of the length times width dependence of NFC.
|
|
149
|
potvfb=0.0005 V/K
|
Coefficient of the geometry independent part of STVFB.
|
|
150
|
pltvfb=0 V/K
|
Coefficient of the length dependence of STVFB.
|
|
151
|
pwtvfb=0 V/K
|
Coefficient of the width dependence of STVFB.
|
|
152
|
plwtvfb=0 V/K
|
Coefficient of the length times width dependence of STVFB.
|
|
153
|
potphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the geometry independent part of STPHIB.
|
|
154
|
pltphib=0 V/K
|
Coefficient of the length dependence of STPHIB.
|
|
155
|
pwtphib=0 V/K
|
Coefficient of the width dependence of STPHIB.
|
|
156
|
plwtphib=0 V/K
|
Coefficient of the length times width dependence of STPHIB.
|
|
157
|
potetabet=1.3(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETABET.
|
|
158
|
pltetabet=0
|
Coefficient of the length dependence of ETABET.
|
|
159
|
pwtetabet=0
|
Coefficient of the width dependence of ETABET.
|
|
160
|
plwtetabet=0
|
Coefficient of the length times width dependence of ETABET.
|
|
161
|
potetasr=0.65(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETASR.
|
|
162
|
pltetasr=0
|
Coefficient of the length dependence of ETASR.
|
|
163
|
pwtetasr=0
|
Coefficient of the width dependence of ETASR.
|
|
164
|
plwtetasr=0
|
Coefficient of the length times width dependence of ETASR.
|
|
165
|
potetaph=1.35(n)/3.75(p)
|
|
|
|
Coefficient of the geometry independent part of ETAPH.
|
|
166
|
pltetaph=0
|
Coefficient of the length dependence of ETAPH.
|
|
167
|
pwtetaph=0
|
Coefficient of the width dependence of ETAPH.
|
|
168
|
plwtetaph=0
|
Coefficient of the length times width dependence of ETAPH.
|
|
169
|
potetamob=0 1/K
|
Coefficient of the geometry independent part of STETAMOB.
|
|
170
|
pltetamob=0 1/K
|
Coefficient of the length dependence of STETAMOB.
|
|
171
|
pwtetamob=0 1/K
|
Coefficient of the width dependence of STETAMOB.
|
|
172
|
plwtetamob=0 1/K
|
Coefficient of the length times width dependence of STETAMOB.
|
|
173
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
174
|
potnuexp=5.25(n)/3.23(p)
|
|
|
|
Coefficient of the geometry independent part of NUEXP.
|
|
175
|
pltnuexp=0
|
Coefficient of the length dependence of NUEXP.
|
|
176
|
pwtnuexp=0
|
Coefficient of the width dependence of NUEXP.
|
|
177
|
plwtnuexp=0
|
Coefficient of the length times width dependence of NUEXP.
|
|
178
|
potetar=0.95(n)/0.4(p)
|
|
|
|
Coefficient of the geometry independent part of ETAR.
|
|
179
|
pltetar=0
|
Coefficient of the length dependence of ETAR.
|
|
180
|
pwtetar=0
|
Coefficient of the width dependence of ETAR.
|
|
181
|
plwtetar=0
|
Coefficient of the length times width dependence of ETAR.
|
|
182
|
potetasat=1.04(n)/0.86(p)
|
|
|
|
|
Coefficient of the geometry independent part of ETASAT.
|
|
183
|
pltetasat=0
|
Coefficient of the length dependence of ETASAT.
|
|
184
|
pwtetasat=0
|
Coefficient of the width dependence of ETASAT.
|
|
185
|
plwtetasat=0
|
Coefficient of the length times width dependence of ETASAT.
|
|
186
|
pota1=0 1/K
|
Coefficient of the geometry independent part of STA1.
|
|
187
|
plta1=0 1/K
|
Coefficient of the length dependence of STA1.
|
|
188
|
pwta1=0 1/K
|
Coefficient of the width dependence of STA1.
|
|
189
|
plwta1=0 1/K
|
Coefficient of the length times width dependence of STA1.
|
|
190
|
potbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the geometry independent part of STBGIDL.
|
|
191
|
pltbgidl=0 V/K
|
Coefficient of the length dependence of STBGIDL.
|
|
192
|
pwtbgidl=0 V/K
|
Coefficient of the width dependence of STBGIDL.
|
|
193
|
plwtbgidl=0 V/K
|
Coefficient of the length times width dependence of STBGIDL.
|
|
194
|
dta=0 K
|
Temperature offset of the device.
|
|
195
|
rgo=0 Ω
|
Gate resistance.
|
|
196
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
197
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
198
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
199
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
200
|
binning=0
|
flag for eldo model.
|
|
201
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
202
|
imax=1000 A
|
Explosion current.
|
|
203
|
tnom (C)
|
alias of tnom.
|
|
204
|
tref (C)
|
alias of tnom.
|
|
205
|
simkitver=3.4
|
|
|
206
|
compatible=spectre
|
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
BET (A/V2)
|
Gain factor.
|
|
49
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
50
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
51
|
table_ids (A)
|
Current.
|
|
52
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
53
|
table_qg (Coul)
|
Charge at g node.
|
|
54
|
table_qd (Coul)
|
Charge at d node.
|
|
55
|
table_qb (Coul)
|
Charge at b node.
|
|
56
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
57
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BET OP-48
|
pliginv M-96
|
poa3 M-91
|
pwtetaph M-174
|
|
beff OP-43
|
pligov M-114
|
poagidl M-117
|
pwtetar M-187
|
|
binning M-208
|
plko M-24
|
poalp M-74
|
pwtetasat M-191
|
|
cbb OP-33
|
plmexp M-80
|
pobacc M-107
|
pwtetasr M-170
|
|
cbd OP-30
|
plmo M-67
|
pobet M-32
|
pwtheph M-42
|
|
cbg OP-31
|
plnfa M-145
|
pobgidl M-121
|
pwther M-50
|
|
cbs OP-32
|
plnfb M-149
|
pobinv M-99
|
pwthesat M-56
|
|
cdb OP-21
|
plnfc M-153
|
pocgdo M-134
|
pwthesr M-38
|
|
cdd OP-18
|
plphib M-29
|
pocgidl M-125
|
pwtheth M-60
|
|
cdg OP-19
|
plsdibl M-63
|
pocgso M-138
|
pwtnuexp M-183
|
|
cds OP-20
|
plssf M-71
|
pocox M-130
|
pwtphib M-162
|
|
cgb OP-25
|
plta1 M-194
|
poetamob M-44
|
pwtvfb M-158
|
|
cgd OP-22
|
pltbgidl M-198
|
poigacc M-103
|
region I-9
|
|
cgdol OP-34
|
pltetabet M-165
|
poiginv M-95
|
rg OP-38
|
|
cgg OP-23
|
pltetamob M-177
|
poigov M-113
|
rgo M-202
|
|
cgs OP-24
|
pltetaph M-173
|
poko M-23
|
rint M-203
|
|
cgsol OP-35
|
pltetar M-186
|
pomexp M-79
|
rout OP-40
|
|
compatible M-212
|
pltetasat M-190
|
pomo M-66
|
rshg M-205
|
|
csb OP-29
|
pltetasr M-169
|
ponfa M-144
|
rvpoly M-204
|
|
csd OP-26
|
pltheph M-41
|
ponfb M-148
|
sqrtsff OP-46
|
|
csg OP-27
|
plther M-49
|
ponfc M-152
|
sqrtsfw OP-45
|
|
css OP-28
|
plthesat M-55
|
pophib M-28
|
stop M-12
|
|
ctype OP-49
|
plthesr M-37
|
posdibl M-62
|
table_ids OP-51
|
|
diode_region OP-57
|
pltheth M-59
|
possf M-70
|
table_qb OP-55
|
|
dlsil M-206
|
pltnuexp M-182
|
pota1 M-193
|
table_qd OP-54
|
|
dta M-201
|
pltphib M-161
|
potbgidl M-197
|
table_qg OP-53
|
|
fknee OP-47
|
pltvfb M-157
|
potetabet M-164
|
table_vth OP-52
|
|
fug OP-44
|
plwa1 M-86
|
potetamob M-176
|
tdelay M-11
|
|
gatenoise M-142
|
plwa2 M-90
|
potetaph M-172
|
tempeff O-1
|
|
gds OP-17
|
plwa3 M-94
|
potetar M-185
|
ther1 M-52
|
|
gm OP-15
|
plwagidl M-120
|
potetasat M-189
|
ther2 M-53
|
|
gmb OP-16
|
plwalp M-77
|
potetasr M-168
|
tmin M-10
|
|
iavl OP-2
|
plwbacc M-110
|
potheph M-40
|
tnom M-210
|
|
ids OP-1
|
plwbet M-35
|
pother M-48
|
tox M-129
|
|
igb OP-5
|
plwbgidl M-124
|
pothesat M-54
|
tr M-17
|
|
igd OP-4
|
plwbinv M-102
|
pothesr M-36
|
tref M-211
|
|
igs OP-3
|
plwcgdo M-137
|
potheth M-58
|
trise I-8
|
|
keff OP-42
|
plwcgidl M-128
|
potnuexp M-181
|
type M-209
|
|
kov M-112
|
plwcgso M-141
|
potphib M-160
|
u OP-39
|
|
kpinv M-27
|
plwcox M-133
|
potvfb M-156
|
vballmsg M-9
|
|
l I-2
|
plwetamob M-47
|
printscaled I-7
|
vbdbhigh M-6
|
|
lap M-14
|
plwigacc M-106
|
pwa1 M-85
|
vbdblow M-5
|
|
leff OP-37
|
plwiginv M-98
|
pwa2 M-89
|
vbds M-4
|
|
level M-1
|
plwigov M-116
|
pwa3 M-93
|
vbox M-3
|
|
lmax M-19
|
plwko M-26
|
pwagidl M-119
|
vbsbhigh M-8
|
|
lmin M-18
|
plwmexp M-82
|
pwalp M-76
|
vbsblow M-7
|
|
lvar M-13
|
plwmo M-69
|
pwbacc M-109
|
vds OP-6
|
|
m I-10
|
plwnfa M-147
|
pwbet M-34
|
vdss OP-13
|
|
meff O-2
|
plwnfb M-151
|
pwbgidl M-123
|
vearly OP-41
|
|
mos_region OP-56
|
plwnfc M-155
|
pwbinv M-101
|
vfb M-22
|
|
mult I-1
|
plwphib M-31
|
pwcgdo M-136
|
vfbov M-111
|
|
nf I-4
|
plwsdibl M-65
|
pwcgidl M-127
|
vgs OP-7
|
|
ngcon I-5
|
plwssf M-73
|
pwcgso M-140
|
vgt OP-12
|
|
nt M-143
|
plwta1 M-196
|
pwcox M-132
|
von OP-50
|
|
nu M-180
|
plwtbgidl M-200
|
pwetamob M-46
|
vp M-78
|
|
paramchk M-2
|
plwtetabet M-167
|
pwigacc M-105
|
vsat OP-14
|
|
pla1 M-84
|
plwtetamob M-179
|
pwiginv M-97
|
vsb OP-8
|
|
pla2 M-88
|
plwtetaph M-175
|
pwigov M-115
|
vth OP-11
|
|
pla3 M-92
|
plwtetar M-188
|
pwko M-25
|
vto OP-9
|
|
plagidl M-118
|
plwtetasat M-192
|
pwmexp M-81
|
vts OP-10
|
|
plalp M-75
|
plwtetasr M-171
|
pwmo M-68
|
w I-3
|
|
plbacc M-108
|
plwtheph M-43
|
pwnfa M-146
|
weff OP-36
|
|
plbet M-33
|
plwther M-51
|
pwnfb M-150
|
wmax M-21
|
|
plbgidl M-122
|
plwthesat M-57
|
pwnfc M-154
|
wmin M-20
|
|
plbinv M-100
|
plwthesr M-39
|
pwphib M-30
|
wot M-16
|
|
plcgdo M-135
|
plwtheth M-61
|
pwsdibl M-64
|
wvar M-15
|
|
plcgidl M-126
|
plwtnuexp M-184
|
pwssf M-72
|
xgw I-6
|
|
plcgso M-139
|
plwtphib M-163
|
pwta1 M-195
|
xpart M-207
|
|
plcox M-131
|
plwtvfb M-159
|
pwtbgidl M-199
|
|
|
pletamob M-45
|
poa1 M-83
|
pwtetabet M-166
|
|
|
pligacc M-104
|
poa2 M-87
|
pwtetamob M-178
|
|
MOS Model 11, Level 1101 (mos11011t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
1
|
0 m=1
|
Alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11011t parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
lmin=0 m
|
Device length low limit for binning selection.
|
|
12
|
lmax=1 m
|
Device length high limit for binning selection.
|
|
13
|
wmin=0 m
|
Device width low limit for binning selection.
|
|
14
|
wmax=1 m
|
Device width high limit for binning selection.
|
|
15
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
16
|
poko=0.5 V
|
Coefficient for the geometry independent part of KO.
|
|
17
|
plko=0 V
|
Coefficient for the length dependence of KO.
|
|
18
|
pwko=0 V
|
Coefficient for the width dependence of KO.
|
|
19
|
plwko=0 V
|
Coefficient for the length times width dependence of KO.
|
|
20
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
21
|
pophib=0.95 V
|
Coefficient for the geometric independent part of PHIB.
|
|
22
|
plphib=0 V
|
Coefficient for the length dependence of PHIB.
|
|
23
|
pwphib=0 V
|
Coefficient for the width dependence of PHIB.
|
|
24
|
plwphib=0 V
|
Coefficient for the length times width dependence of PHIB.
|
|
25
|
pobet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Coefficient for the geometry independent part of BET.
|
|
26
|
plbet=0 A/V2
|
Coefficient for the length dependence of BET.
|
|
27
|
pwbet=0 A/V2
|
Coefficient for the width dependence of BET.
|
|
28
|
plwbet=0 A/V2
|
Coefficient for the width over length dependence of BET.
|
|
29
|
pothesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESR.
|
|
30
|
plthesr=0 1/V
|
Coefficient of the length dependence of THESR.
|
|
31
|
pwthesr=0 1/V
|
Coefficient of the width dependence of THESR.
|
|
32
|
plwthesr=0 1/V
|
Coefficient of the length times width dependence of THESR.
|
|
33
|
potheph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THEPH.
|
|
34
|
pltheph=0 1/V
|
Coefficient of the length dependence of THEPH.
|
|
35
|
pwtheph=0 1/V
|
Coefficient of the width dependence of THEPH.
|
|
36
|
plwtheph=0 1/V
|
Coefficient of the length times width dependence of THEPH.
|
|
37
|
poetamob=1.4(n)/3(p)
|
|
|
|
|
Coefficient of the geometry independent part of ETAMOB.
|
|
38
|
pletamob=0
|
Coefficient of the length dependence of ETAMOB.
|
|
39
|
pwetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
40
|
plwetamob=0
|
Coefficient of the length times width dependence of ETAMOB.
|
|
41
|
pother=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THER.
|
|
42
|
plther=0 1/V
|
Coefficient of the length dependence of THER.
|
|
43
|
pwther=0 1/V
|
Coefficient of the width dependence of THER.
|
|
44
|
plwther=0 1/V
|
Coefficient of the length times width dependence of THER.
|
|
45
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
46
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
47
|
pothesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESAT.
|
|
48
|
plthesat=0 1/V
|
Coefficient of the length dependence of THESAT.
|
|
49
|
pwthesat=0 1/V
|
Coefficient of the width dependence of THESAT.
|
|
50
|
plwthesat=0 1/V
|
Coefficient of the length times width dependence of THESAT.
|
|
51
|
potheth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of the geometry independent part of THETH.
|
|
52
|
pltheth=0 1/V3
|
Coefficient of the length dependence of THETH.
|
|
53
|
pwtheth=0 1/V3
|
Coefficient of the width dependence of THETH.
|
|
54
|
plwtheth=0 1/V3
|
Coefficient of the length times width dependence of THETH.
|
|
55
|
posdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SDIBL.
|
|
56
|
plsdibl=0 1/V
|
|
|
|
|
Coefficient of the length dependence of SDIBL.
|
|
57
|
pwsdibl=0 1/V
|
|
|
|
|
Coefficient of the width dependence of SDIBL.
|
|
58
|
plwsdibl=0 1/V
|
Coefficient of the length times width dependence of SDIBL.
|
|
59
|
pomo=0
|
Coefficient of the geometry independent part of MO.
|
|
60
|
plmo=0
|
Coefficient of the length dependence of MO.
|
|
61
|
pwmo=0
|
Coefficient of the width dependence of MO.
|
|
62
|
plwmo=0
|
Coefficient of the length times width dependence of MO.
|
|
63
|
possf=0.012(n)/0.01(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SSF.
|
|
64
|
plssf=0 1/V
|
Coefficient of the length dependence of SSF.
|
|
65
|
pwssf=0 1/V
|
Coefficient of the width dependence of SSF.
|
|
66
|
plwssf=0 1/V
|
Coefficient of the length times width dependence of SSF.
|
|
67
|
poalp=0.025
|
Coefficient of the geometry independent part of ALP.
|
|
68
|
plalp=0
|
Coefficient of the length dependence of ALP.
|
|
69
|
pwalp=0
|
Coefficient of the width dependence of ALP.
|
|
70
|
plwalp=0
|
Coefficient of the length times width dependence of ALP.
|
|
71
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
72
|
pomexp=0.2
|
Coefficient of the geometry independent part of MEXP.
|
|
73
|
plmexp=0
|
Coefficient of the length dependence of MEXP.
|
|
74
|
pwmexp=0
|
Coefficient of the width dependence of MEXP.
|
|
75
|
plwmexp=0
|
Coefficient of the length times width dependence of MEXP.
|
|
76
|
poa1=6.02(n)/6.86(p)
|
|
|
|
|
Coefficient of the geometry independent part of A1.
|
|
77
|
pla1=0
|
Coefficient of the length dependence of A1.
|
|
78
|
pwa1=0
|
Coefficient of the width dependence of A1.
|
|
79
|
plwa1=0
|
Coefficient of the length times width dependence of A1.
|
|
80
|
poa2=38(n)/57.3(p) V
|
|
|
|
|
Coefficient of the geometry independent part of A2.
|
|
81
|
pla2=0 V
|
Coefficient of the length dependence of A2.
|
|
82
|
pwa2=0 V
|
Coefficient of the width dependence of A2.
|
|
83
|
plwa2=0 V
|
Coefficient of the length times width dependence of A2.
|
|
84
|
poa3=0.641(n)/0.425(p)
|
|
|
|
Coefficient of the geometry independent part of A3.
|
|
85
|
pla3=0
|
Coefficient of the length dependence of A3.
|
|
86
|
pwa3=0
|
Coefficient of the width dependence of A3.
|
|
87
|
plwa3=0
|
Coefficient of the length times width dependence of A3.
|
|
88
|
poiginv=0 A/V2
|
Coefficient of the geometry independent part of IGINV.
|
|
89
|
pliginv=0 A/V2
|
Coefficient of the length dependence of IGINV.
|
|
90
|
pwiginv=0 A/V2
|
Coefficient of the width dependence of IGINV.
|
|
91
|
plwiginv=0 A/V2
|
Coefficient of the length times width dependence of IGINV.
|
|
92
|
pobinv=48(n)/87.5(p) V
|
|
|
|
Coefficient of the geometry independent part of BINV.
|
|
93
|
plbinv=0 V
|
Coefficient of the length dependence of BINV.
|
|
94
|
pwbinv=0 V
|
Coefficient of the width dependence of BINV.
|
|
95
|
plwbinv=0 V
|
Coefficient of the length times width dependence of BINV.
|
|
96
|
poigacc=0 A/V2
|
Coefficient of the geometry independent part of IGACC.
|
|
97
|
pligacc=0 A/V2
|
Coefficient of the length dependence of IGACC.
|
|
98
|
pwigacc=0 A/V2
|
Coefficient of the width dependence of IGACC.
|
|
99
|
plwigacc=0 A/V2
|
Coefficient of the length times width dependence of IGACC.
|
|
100
|
pobacc=48 V
|
Coefficient of the geometry independent part of BACC.
|
|
101
|
plbacc=0 V
|
Coefficient of the length dependence of BACC.
|
|
102
|
pwbacc=0 V
|
Coefficient of the width dependence of BACC.
|
|
103
|
plwbacc=0 V
|
Coefficient of the length times width dependence of BACC.
|
|
104
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
105
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
106
|
poigov=0 A/V2
|
Coefficient of the geometry independent part of IGOV.
|
|
107
|
pligov=0 A/V2
|
Coefficient of the length dependence of IGOV.
|
|
108
|
pwigov=0 A/V2
|
Coefficient of the width dependence of IGOV.
|
|
109
|
plwigov=0 A/V2
|
Coefficient of the length times width dependence of IGOV.
|
|
110
|
poagidl=0 A/V3
|
Coefficient of the geometry independent part of AGIDL.
|
|
111
|
plagidl=0 A/V3
|
Coefficient of the length dependence of AGIDL.
|
|
112
|
pwagidl=0 A/V3
|
Coefficient of the width dependence of AGIDL.
|
|
113
|
plwagidl=0 A/V3
|
Coefficient of the length times width dependence of AGIDL.
|
|
114
|
pobgidl=41 V
|
Coefficient of the geometry independent part of BGIDL.
|
|
115
|
plbgidl=0 V
|
Coefficient of the length dependence of BGIDL.
|
|
116
|
pwbgidl=0 V
|
Coefficient of the width dependence of BGIDL.
|
|
117
|
plwbgidl=0 V
|
Coefficient of the length times width dependence of BGIDL.
|
|
118
|
pocgidl=0
|
Coefficient of the geometry independent part of CGIDL.
|
|
119
|
plcgidl=0
|
Coefficient of the length dependence of CGIDL.
|
|
120
|
pwcgidl=0
|
Coefficient of the width dependence of CGIDL.
|
|
121
|
plwcgidl=0
|
Coefficient of the length times width dependence of CGIDL.
|
|
122
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
123
|
pocox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Coefficient of the geometry independent part of COX.
|
|
124
|
plcox=0 F
|
Coefficient of the length dependence of COX.
|
|
125
|
pwcox=0 F
|
Coefficient of the width dependence of COX.
|
|
126
|
plwcox=0 F
|
Coefficient of the length times width dependence of COX.
|
|
127
|
pocgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGDO.
|
|
128
|
plcgdo=0 F
|
Coefficient of the length dependence of CGDO.
|
|
129
|
pwcgdo=0 F
|
Coefficient of the width dependence of CGDO.
|
|
130
|
plwcgdo=0 F
|
Coefficient of the length time width dependence of CGDO.
|
|
131
|
pocgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGSO.
|
|
132
|
plcgso=0 F
|
Coefficient of the length dependence of CGSO.
|
|
133
|
pwcgso=0 F
|
Coefficient of the width dependence of CGSO.
|
|
134
|
plwcgso=0 F
|
Coefficient of the length times width dependence of CGSO.
|
|
135
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
136
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
137
|
ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4
|
|
|
|
Coefficient of the geometry independent part of NFA.
|
|
138
|
plnfa=0 1/V m4
|
Coefficient of the length dependence of NFA.
|
|
139
|
pwnfa=0 1/V m4
|
Coefficient of the width dependence of NFA.
|
|
140
|
plwnfa=0 1/V m4
|
Coefficient of the length times width dependence of NFA.
|
|
141
|
ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2
|
|
|
|
Coefficient of the geometry independent part of NFB.
|
|
142
|
plnfb=0 1/V m2
|
Coefficient of the length dependence of NFB.
|
|
143
|
pwnfb=0 1/V m2
|
Coefficient of the width dependence of NFB.
|
|
144
|
plwnfb=0 1/V m2
|
Coefficient of the length times width dependence of NFB.
|
|
145
|
ponfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of NFC.
|
|
146
|
plnfc=0 1/V
|
Coefficient of the length dependence of NFC.
|
|
147
|
pwnfc=0 1/V
|
Coefficient of the width dependence of NFC.
|
|
148
|
plwnfc=0 1/V
|
Coefficient of the length times width dependence of NFC.
|
|
149
|
potvfb=0.0005 V/K
|
Coefficient of the geometry independent part of STVFB.
|
|
150
|
pltvfb=0 V/K
|
Coefficient of the length dependence of STVFB.
|
|
151
|
pwtvfb=0 V/K
|
Coefficient of the width dependence of STVFB.
|
|
152
|
plwtvfb=0 V/K
|
Coefficient of the length times width dependence of STVFB.
|
|
153
|
potphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the geometry independent part of STPHIB.
|
|
154
|
pltphib=0 V/K
|
Coefficient of the length dependence of STPHIB.
|
|
155
|
pwtphib=0 V/K
|
Coefficient of the width dependence of STPHIB.
|
|
156
|
plwtphib=0 V/K
|
Coefficient of the length times width dependence of STPHIB.
|
|
157
|
potetabet=1.3(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETABET.
|
|
158
|
pltetabet=0
|
Coefficient of the length dependence of ETABET.
|
|
159
|
pwtetabet=0
|
Coefficient of the width dependence of ETABET.
|
|
160
|
plwtetabet=0
|
Coefficient of the length times width dependence of ETABET.
|
|
161
|
potetasr=0.65(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETASR.
|
|
162
|
pltetasr=0
|
Coefficient of the length dependence of ETASR.
|
|
163
|
pwtetasr=0
|
Coefficient of the width dependence of ETASR.
|
|
164
|
plwtetasr=0
|
Coefficient of the length times width dependence of ETASR.
|
|
165
|
potetaph=1.35(n)/3.75(p)
|
|
|
|
Coefficient of the geometry independent part of ETAPH.
|
|
166
|
pltetaph=0
|
Coefficient of the length dependence of ETAPH.
|
|
167
|
pwtetaph=0
|
Coefficient of the width dependence of ETAPH.
|
|
168
|
plwtetaph=0
|
Coefficient of the length times width dependence of ETAPH.
|
|
169
|
potetamob=0 1/K
|
Coefficient of the geometry independent part of STETAMOB.
|
|
170
|
pltetamob=0 1/K
|
Coefficient of the length dependence of STETAMOB.
|
|
171
|
pwtetamob=0 1/K
|
Coefficient of the width dependence of STETAMOB.
|
|
172
|
plwtetamob=0 1/K
|
Coefficient of the length times width dependence of STETAMOB.
|
|
173
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
174
|
potnuexp=5.25(n)/3.23(p)
|
|
|
|
Coefficient of the geometry independent part of NUEXP.
|
|
175
|
pltnuexp=0
|
Coefficient of the length dependence of NUEXP.
|
|
176
|
pwtnuexp=0
|
Coefficient of the width dependence of NUEXP.
|
|
177
|
plwtnuexp=0
|
Coefficient of the length times width dependence of NUEXP.
|
|
178
|
potetar=0.95(n)/0.4(p)
|
|
|
|
Coefficient of the geometry independent part of ETAR.
|
|
179
|
pltetar=0
|
Coefficient of the length dependence of ETAR.
|
|
180
|
pwtetar=0
|
Coefficient of the width dependence of ETAR.
|
|
181
|
plwtetar=0
|
Coefficient of the length times width dependence of ETAR.
|
|
182
|
potetasat=1.04(n)/0.86(p)
|
|
|
|
Coefficient of the geometry independent part of ETASAT.
|
|
183
|
pltetasat=0
|
Coefficient of the length dependence of ETASAT.
|
|
184
|
pwtetasat=0
|
Coefficient of the width dependence of ETASAT.
|
|
185
|
plwtetasat=0
|
Coefficient of the length times width dependence of ETASAT.
|
|
186
|
pota1=0 1/K
|
Coefficient of the geometry independent part of STA1.
|
|
187
|
plta1=0 1/K
|
Coefficient of the length dependence of STA1.
|
|
188
|
pwta1=0 1/K
|
Coefficient of the width dependence of STA1.
|
|
189
|
plwta1=0 1/K
|
Coefficient of the length times width dependence of STA1.
|
|
190
|
potbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the geometry independent part of STBGIDL.
|
|
191
|
pltbgidl=0 V/K
|
Coefficient of the length dependence of STBGIDL.
|
|
192
|
pwtbgidl=0 V/K
|
Coefficient of the width dependence of STBGIDL.
|
|
193
|
plwtbgidl=0 V/K
|
Coefficient of the length times width dependence of STBGIDL.
|
|
194
|
dta=0 K
|
Temperature offset of the device.
|
|
195
|
rgo=0 Ω
|
Gate resistance.
|
|
196
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
197
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
198
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
199
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
200
|
rth=300 K/W
|
Thermal resistance.
|
|
201
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
202
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
203
|
binning=0
|
flag for eldo model.
|
|
204
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
205
|
imax=1000 A
|
Explosion current.
|
|
206
|
tnom (C)
|
alias of tnom.
|
|
207
|
tref (C)
|
alias of tnom.
|
|
208
|
simkitver=3.4
|
|
|
209
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
Pdiss (W)
|
Dissipation.
|
|
49
|
TK (K)
|
Actual device temperature.
|
|
50
|
BET (A/V2)
|
Gain factor.
|
|
51
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
52
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
53
|
table_ids (A)
|
Current.
|
|
54
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
55
|
table_qg (Coul)
|
Charge at g node.
|
|
56
|
table_qd (Coul)
|
Charge at d node.
|
|
57
|
table_qb (Coul)
|
Charge at b node.
|
|
58
|
pwr (W)
|
Power.
|
|
59
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth
|
|
60
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BET OP-50
|
plcox M-131
|
poa1 M-83
|
pwtetabet M-166
|
|
Pdiss OP-48
|
pletamob M-45
|
poa2 M-87
|
pwtetamob M-178
|
|
TK OP-49
|
pligacc M-104
|
poa3 M-91
|
pwtetaph M-174
|
|
ath M-210
|
pliginv M-96
|
poagidl M-117
|
pwtetar M-187
|
|
beff OP-43
|
pligov M-114
|
poalp M-74
|
pwtetasat M-191
|
|
binning M-211
|
plko M-24
|
pobacc M-107
|
pwtetasr M-170
|
|
cbb OP-33
|
plmexp M-80
|
pobet M-32
|
pwtheph M-42
|
|
cbd OP-30
|
plmo M-67
|
pobgidl M-121
|
pwther M-50
|
|
cbg OP-31
|
plnfa M-145
|
pobinv M-99
|
pwthesat M-56
|
|
cbs OP-32
|
plnfb M-149
|
pocgdo M-134
|
pwthesr M-38
|
|
cdb OP-21
|
plnfc M-153
|
pocgidl M-125
|
pwtheth M-60
|
|
cdd OP-18
|
plphib M-29
|
pocgso M-138
|
pwtnuexp M-183
|
|
cdg OP-19
|
plsdibl M-63
|
pocox M-130
|
pwtphib M-162
|
|
cds OP-20
|
plssf M-71
|
poetamob M-44
|
pwtvfb M-158
|
|
cgb OP-25
|
plta1 M-194
|
poigacc M-103
|
region I-9
|
|
cgd OP-22
|
pltbgidl M-198
|
poiginv M-95
|
rg OP-38
|
|
cgdol OP-34
|
pltetabet M-165
|
poigov M-113
|
rgo M-202
|
|
cgg OP-23
|
pltetamob M-177
|
poko M-23
|
rint M-203
|
|
cgs OP-24
|
pltetaph M-173
|
pomexp M-79
|
rout OP-40
|
|
cgsol OP-35
|
pltetar M-186
|
pomo M-66
|
rshg M-205
|
|
compatible M-215
|
pltetasat M-190
|
ponfa M-144
|
rth M-208
|
|
csb OP-29
|
pltetasr M-169
|
ponfb M-148
|
rvpoly M-204
|
|
csd OP-26
|
pltheph M-41
|
ponfc M-152
|
sqrtsff OP-46
|
|
csg OP-27
|
plther M-49
|
pophib M-28
|
sqrtsfw OP-45
|
|
css OP-28
|
plthesat M-55
|
posdibl M-62
|
stop M-12
|
|
cth M-209
|
plthesr M-37
|
possf M-70
|
table_ids OP-53
|
|
ctype OP-51
|
pltheth M-59
|
pota1 M-193
|
table_qb OP-57
|
|
diode_region OP-60
|
pltnuexp M-182
|
potbgidl M-197
|
table_qd OP-56
|
|
dlsil M-206
|
pltphib M-161
|
potetabet M-164
|
table_qg OP-55
|
|
dta M-201
|
pltvfb M-157
|
potetamob M-176
|
table_vth OP-54
|
|
fknee OP-47
|
plwa1 M-86
|
potetaph M-172
|
tdelay M-11
|
|
fug OP-44
|
plwa2 M-90
|
potetar M-185
|
tempeff O-1
|
|
gatenoise M-142
|
plwa3 M-94
|
potetasat M-189
|
ther1 M-52
|
|
gds OP-17
|
plwagidl M-120
|
potetasr M-168
|
ther2 M-53
|
|
gm OP-15
|
plwalp M-77
|
potheph M-40
|
tmin M-10
|
|
gmb OP-16
|
plwbacc M-110
|
pother M-48
|
tnom M-213
|
|
iavl OP-2
|
plwbet M-35
|
pothesat M-54
|
tox M-129
|
|
ids OP-1
|
plwbgidl M-124
|
pothesr M-36
|
tr M-17
|
|
igb OP-5
|
plwbinv M-102
|
potheth M-58
|
tref M-214
|
|
igd OP-4
|
plwcgdo M-137
|
potnuexp M-181
|
trise I-8
|
|
igs OP-3
|
plwcgidl M-128
|
potphib M-160
|
type M-212
|
|
keff OP-42
|
plwcgso M-141
|
potvfb M-156
|
u OP-39
|
|
kov M-112
|
plwcox M-133
|
printscaled I-7
|
vballmsg M-9
|
|
kpinv M-27
|
plwetamob M-47
|
pwa1 M-85
|
vbdbhigh M-6
|
|
l I-2
|
plwigacc M-106
|
pwa2 M-89
|
vbdblow M-5
|
|
lap M-14
|
plwiginv M-98
|
pwa3 M-93
|
vbds M-4
|
|
leff OP-37
|
plwigov M-116
|
pwagidl M-119
|
vbox M-3
|
|
level M-1
|
plwko M-26
|
pwalp M-76
|
vbsbhigh M-8
|
|
lmax M-19
|
plwmexp M-82
|
pwbacc M-109
|
vbsblow M-7
|
|
lmin M-18
|
plwmo M-69
|
pwbet M-34
|
vds OP-6
|
|
lvar M-13
|
plwnfa M-147
|
pwbgidl M-123
|
vdss OP-13
|
|
m I-10
|
plwnfb M-151
|
pwbinv M-101
|
vearly OP-41
|
|
meff O-2
|
plwnfc M-155
|
pwcgdo M-136
|
vfb M-22
|
|
mos_region OP-59
|
plwphib M-31
|
pwcgidl M-127
|
vfbov M-111
|
|
mult I-1
|
plwsdibl M-65
|
pwcgso M-140
|
vgs OP-7
|
|
nf I-4
|
plwssf M-73
|
pwcox M-132
|
vgt OP-12
|
|
ngcon I-5
|
plwta1 M-196
|
pwetamob M-46
|
von OP-52
|
|
nt M-143
|
plwtbgidl M-200
|
pwigacc M-105
|
vp M-78
|
|
nu M-180
|
plwtetabet M-167
|
pwiginv M-97
|
vsat OP-14
|
|
paramchk M-2
|
plwtetamob M-179
|
pwigov M-115
|
vsb OP-8
|
|
pla1 M-84
|
plwtetaph M-175
|
pwko M-25
|
vth OP-11
|
|
pla2 M-88
|
plwtetar M-188
|
pwmexp M-81
|
vto OP-9
|
|
pla3 M-92
|
plwtetasat M-192
|
pwmo M-68
|
vts OP-10
|
|
plagidl M-118
|
plwtetasr M-171
|
pwnfa M-146
|
w I-3
|
|
plalp M-75
|
plwtheph M-43
|
pwnfb M-150
|
weff OP-36
|
|
plbacc M-108
|
plwther M-51
|
pwnfc M-154
|
wmax M-21
|
|
plbet M-33
|
plwthesat M-57
|
pwphib M-30
|
wmin M-20
|
|
plbgidl M-122
|
plwthesr M-39
|
pwr OP-58
|
wot M-16
|
|
plbinv M-100
|
plwtheth M-61
|
pwsdibl M-64
|
wvar M-15
|
|
plcgdo M-135
|
plwtnuexp M-184
|
pwssf M-72
|
xgw I-6
|
|
plcgidl M-126
|
plwtphib M-163
|
pwta1 M-195
|
xpart M-207
|
|
plcgso M-139
|
plwtvfb M-159
|
pwtbgidl M-199
|
|
MOS Model 11, Level 1101 (mos1101e)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos1101e parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
tr=21 C
|
Reference temperature.
|
|
7
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
8
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
9
|
ko=0.5 V
|
Body-effect factor.
|
|
10
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
11
|
phib=0.95 V
|
Surface potential at the onset of strong inversion.
|
|
12
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
13
|
bet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Gain factor.
|
|
14
|
etabet=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
15
|
thesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Mobility degradation parameter due to surface roughness scattering.
|
|
16
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
17
|
theph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Mobility degradation parameter due to phonon scattering.
|
|
18
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
19
|
etamob=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion charge.
|
|
20
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
21
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
22
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
23
|
ther=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of series resistance.
|
|
24
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
25
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
26
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
27
|
thesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
28
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
29
|
theth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
30
|
sdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
31
|
mo=0
|
Parameter for (short-channel) subthreshold slope.
|
|
32
|
ssf=0.012(n)/0.01(p) 1/V
|
|
|
|
Static-feedback parameter.
|
|
33
|
alp=0.025
|
Factor of channel length modulation.
|
|
34
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
35
|
mexp=5
|
Smoothing factor.
|
|
36
|
a1=6.02(n)/6.86(p)
|
|
|
|
|
Factor of the weak-avalanche current.
|
|
37
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
38
|
a2=38(n)/57.3(p) V
|
|
|
|
|
Exponent of the weak-avalanche current.
|
|
39
|
a3=0.641(n)/0.425(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
40
|
iginv=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
41
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
42
|
igacc=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
43
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
44
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
45
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
46
|
igov=0 A/V2
|
Gain factor for Source/Drain overlap tunneling current.
|
|
47
|
agidl=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
48
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
49
|
stbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
50
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
51
|
cox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
52
|
cgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
53
|
cgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
54
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
55
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
56
|
nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
57
|
nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)
|
|
|
|
|
Second coefficient of the flicker noise.
|
|
58
|
nfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
59
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
60
|
dta=0 K
|
Temperature offset of the device.
|
|
61
|
rg=0 Ω
|
Gate resistance.
|
|
62
|
binning=0
|
Flag for eldo model.
|
|
63
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
64
|
imax=1000 A
|
Explosion current.
|
|
65
|
tnom (C)
|
Alias of tnom.
|
|
66
|
tref (C)
|
Alias of tnom.
|
|
67
|
simkitver=3.4
|
|
|
68
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
rg (Ω)
|
Gate resistance.
|
|
37
|
u
|
Transistor gain (gm/gds).
|
|
38
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
39
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
40
|
keff (V )
|
Body effect parameter.
|
|
41
|
beff (A/V2)
|
Gain factor.
|
|
42
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
43
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
44
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
45
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
46
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
47
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
48
|
table_ids (A)
|
Current.
|
|
49
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
50
|
table_qg (Coul)
|
Charge at g node.
|
|
51
|
table_qd (Coul)
|
Charge at d node.
|
|
52
|
table_qb (Coul)
|
Charge at b node.
|
|
53
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
54
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
a1 M-43
|
ctype OP-46
|
nfa M-63
|
thesat M-34
|
|
a2 M-45
|
diode_region OP-54
|
nfb M-64
|
thesr M-22
|
|
a3 M-46
|
dta M-67
|
nfc M-65
|
theth M-36
|
|
agidl M-54
|
etabet M-21
|
nt M-62
|
tmin M-10
|
|
alp M-40
|
etamob M-26
|
nu M-28
|
tnom M-72
|
|
bacc M-50
|
etaph M-25
|
nuexp M-29
|
tox M-66
|
|
beff OP-41
|
etar M-31
|
paramchk M-2
|
tr M-13
|
|
bet M-20
|
etasat M-35
|
phib M-18
|
tref M-73
|
|
bgidl M-55
|
etasr M-23
|
printscaled I-2
|
trise I-3
|
|
binning M-70
|
fknee OP-45
|
region I-4
|
type M-71
|
|
binv M-48
|
fug OP-42
|
rg M-68
|
u OP-37
|
|
cbb OP-33
|
gatenoise M-61
|
rg OP-36
|
vballmsg M-9
|
|
cbd OP-30
|
gds OP-17
|
rout OP-38
|
vbdbhigh M-6
|
|
cbg OP-31
|
gm OP-15
|
sdibl M-37
|
vbdblow M-5
|
|
cbs OP-32
|
gmb OP-16
|
sqrtsff OP-44
|
vbds M-4
|
|
cdb OP-21
|
iavl OP-2
|
sqrtsfw OP-43
|
vbox M-3
|
|
cdd OP-18
|
ids OP-1
|
ssf M-39
|
vbsbhigh M-8
|
|
cdg OP-19
|
igacc M-49
|
sta1 M-44
|
vbsblow M-7
|
|
cds OP-20
|
igb OP-5
|
stbgidl M-56
|
vds OP-6
|
|
cgb OP-25
|
igd OP-4
|
stetamob M-27
|
vdss OP-13
|
|
cgd OP-22
|
iginv M-47
|
stop M-12
|
vearly OP-39
|
|
cgdo M-59
|
igov M-53
|
stphib M-19
|
vfb M-14
|
|
cgdol OP-34
|
igs OP-3
|
stvfb M-15
|
vfbov M-51
|
|
cgg OP-23
|
keff OP-40
|
table_ids OP-48
|
vgs OP-7
|
|
cgidl M-57
|
ko M-16
|
table_qb OP-52
|
vgt OP-12
|
|
cgs OP-24
|
kov M-52
|
table_qd OP-51
|
von OP-47
|
|
cgso M-60
|
kpinv M-17
|
table_qg OP-50
|
vp M-41
|
|
cgsol OP-35
|
level M-1
|
table_vth OP-49
|
vsat OP-14
|
|
compatible M-74
|
m I-5
|
tdelay M-11
|
vsb OP-8
|
|
cox M-58
|
meff O-2
|
tempeff O-1
|
vth OP-11
|
|
csb OP-29
|
mexp M-42
|
theph M-24
|
vto OP-9
|
|
csd OP-26
|
mo M-38
|
ther M-30
|
vts OP-10
|
|
csg OP-27
|
mos_region OP-53
|
ther1 M-32
|
xpart M-69
|
|
css OP-28
|
mult I-1
|
ther2 M-33
|
|
MOS Model 11, Level 1101 (mos1101et)
This is SimKit 4.3.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos1101et parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
tr=21 C
|
Reference temperature.
|
|
7
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
8
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
9
|
ko=0.5 V
|
Body-effect factor.
|
|
10
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
11
|
phib=0.95 V
|
Surface potential at the onset of strong inversion.
|
|
12
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
13
|
bet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Gain factor.
|
|
14
|
etabet=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
15
|
thesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Mobility degradation parameter due to surface roughness scattering.
|
|
16
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
17
|
theph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Mobility degradation parameter due to phonon scattering.
|
|
18
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
19
|
etamob=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion charge.
|
|
20
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
21
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
22
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
23
|
ther=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of series resistance.
|
|
24
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
25
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
26
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
27
|
thesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
28
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
29
|
theth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
30
|
sdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
31
|
mo=0
|
Parameter for (short-channel) subthreshold slope.
|
|
32
|
ssf=0.012(n)/0.01(p) 1/V
|
|
|
|
Static-feedback parameter.
|
|
33
|
alp=0.025
|
Factor of channel length modulation.
|
|
34
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
35
|
mexp=5
|
Smoothing factor.
|
|
36
|
a1=6.02(n)/6.86(p)
|
|
|
|
|
Factor of the weak-avalanche current.
|
|
37
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
38
|
a2=38(n)/57.3(p) V
|
|
|
|
|
Exponent of the weak-avalanche current.
|
|
39
|
a3=0.641(n)/0.425(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
40
|
iginv=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
41
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
42
|
igacc=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
43
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
44
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
45
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
46
|
igov=0 A/V2
|
Gain factor for Source/Drain overlap tunneling current.
|
|
47
|
agidl=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
48
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
49
|
stbgidl=-0.000364 V/K
|
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
50
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
51
|
cox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
52
|
cgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
53
|
cgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
54
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
55
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
56
|
nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
57
|
nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)
|
|
|
|
|
Second coefficient of the flicker noise.
|
|
58
|
nfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
59
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
60
|
dta=0 K
|
Temperature offset of the device.
|
|
61
|
rg=0 Ω
|
Gate resistance.
|
|
62
|
rth=300 K/W
|
Thermal resistance.
|
|
63
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
64
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
65
|
binning=0
|
Flag for eldo model.
|
|
66
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
67
|
imax=1000 A
|
Explosion current.
|
|
68
|
tnom (C)
|
Alias of tnom.
|
|
69
|
tref (C)
|
Alias of tnom.
|
|
70
|
simkitver=3.4
|
|
|
71
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
rg (Ω)
|
Gate resistance.
|
|
37
|
u
|
Transistor gain (gm/gds).
|
|
38
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
39
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
40
|
keff (V )
|
Body effect parameter.
|
|
41
|
beff (A/V2)
|
Gain factor.
|
|
42
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
43
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
44
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
45
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
46
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
47
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
48
|
Pdiss (W)
|
Dissipation.
|
|
49
|
TK (K)
|
Actual device temperature.
|
|
50
|
table_ids (A)
|
Current.
|
|
51
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
52
|
table_qg (Coul)
|
Charge at g node.
|
|
53
|
table_qd (Coul)
|
Charge at d node.
|
|
54
|
table_qb (Coul)
|
Charge at b node.
|
|
55
|
pwr (W)
|
Power.
|
|
56
|
mos_region
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth
|
|
57
|
diode_region
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-46
|
css OP-28
|
nfa M-63
|
thesat M-34
|
|
TK OP-47
|
cth M-71
|
nfb M-64
|
thesr M-22
|
|
a1 M-43
|
ctype OP-48
|
nfc M-65
|
theth M-36
|
|
a2 M-45
|
diode_region OP-57
|
nt M-62
|
tmin M-10
|
|
a3 M-46
|
dta M-67
|
nu M-28
|
tnom M-75
|
|
agidl M-54
|
etabet M-21
|
nuexp M-29
|
tox M-66
|
|
alp M-40
|
etamob M-26
|
paramchk M-2
|
tr M-13
|
|
ath M-72
|
etaph M-25
|
phib M-18
|
tref M-76
|
|
bacc M-50
|
etar M-31
|
printscaled I-2
|
trise I-3
|
|
beff OP-41
|
etasat M-35
|
pwr OP-55
|
type M-74
|
|
bet M-20
|
etasr M-23
|
region I-4
|
u OP-37
|
|
bgidl M-55
|
fknee OP-45
|
rg M-68
|
vballmsg M-9
|
|
binning M-73
|
fug OP-42
|
rg OP-36
|
vbdbhigh M-6
|
|
binv M-48
|
gatenoise M-61
|
rout OP-38
|
vbdblow M-5
|
|
cbb OP-33
|
gds OP-17
|
rth M-70
|
vbds M-4
|
|
cbd OP-30
|
gm OP-15
|
sdibl M-37
|
vbox M-3
|
|
cbg OP-31
|
gmb OP-16
|
sqrtsff OP-44
|
vbsbhigh M-8
|
|
cbs OP-32
|
iavl OP-2
|
sqrtsfw OP-43
|
vbsblow M-7
|
|
cdb OP-21
|
ids OP-1
|
ssf M-39
|
vds OP-6
|
|
cdd OP-18
|
igacc M-49
|
sta1 M-44
|
vdss OP-13
|
|
cdg OP-19
|
igb OP-5
|
stbgidl M-56
|
vearly OP-39
|
|
cds OP-20
|
igd OP-4
|
stetamob M-27
|
vfb M-14
|
|
cgb OP-25
|
iginv M-47
|
stop M-12
|
vfbov M-51
|
|
cgd OP-22
|
igov M-53
|
stphib M-19
|
vgs OP-7
|
|
cgdo M-59
|
igs OP-3
|
stvfb M-15
|
vgt OP-12
|
|
cgdol OP-34
|
keff OP-40
|
table_ids OP-50
|
von OP-49
|
|
cgg OP-23
|
ko M-16
|
table_qb OP-54
|
vp M-41
|
|
cgidl M-57
|
kov M-52
|
table_qd OP-53
|
vsat OP-14
|
|
cgs OP-24
|
kpinv M-17
|
table_qg OP-52
|
vsb OP-8
|
|
cgso M-60
|
level M-1
|
table_vth OP-51
|
vth OP-11
|
|
cgsol OP-35
|
m I-5
|
tdelay M-11
|
vto OP-9
|
|
compatible M-77
|
meff O-2
|
tempeff O-1
|
vts OP-10
|
|
cox M-58
|
mexp M-42
|
theph M-24
|
xpart M-69
|
|
csb OP-29
|
mo M-38
|
ther M-30
|
|
|
csd OP-26
|
mos_region OP-56
|
ther1 M-32
|
|
|
csg OP-27
|
mult I-1
|
ther2 M-33
|
|
MOS Model 11, Level 1102 (mos11020)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11020 parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
12
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
13
|
kor=0.5 V
|
Body effect coefficient for the reference transistor.
|
|
14
|
slko=0
|
Coefficient of the length dependence of KO.
|
|
15
|
sl2ko=0
|
Second coefficient of the length dependence of KO.
|
|
16
|
sl3ko=0
|
Third coefficient of the length dependence of KO.
|
|
17
|
sl3koexp=1
|
Exponent belonging to the third coefficient of the length dependence of KO.
|
|
18
|
swko=0
|
Coefficient of the width dependence of KO.
|
|
19
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
20
|
phibr=0.95 V
|
Surface potential at strong inversion.
|
|
21
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
22
|
slphib=0
|
Coefficient of the length dependence of PHIB.
|
|
23
|
sl2phib=0
|
Second coefficient of the length dependence of PHIB.
|
|
24
|
swphib=0
|
Coefficient of the width dependence of PHIB.
|
|
25
|
betsq=0.000371(n)/0.000115(p) A/V2
|
|
|
|
Gain factor for an infinite square transistor.
|
|
26
|
etabetr=1.3(n)/0.5(p)
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
27
|
sletabet=0
|
Coefficient of length dependence of ETABETR.
|
|
28
|
fbet1=0
|
Relative mobility decrease due to first lateral profile.
|
|
29
|
lp1=8e-07 m
|
Characteristic length of first lateral profile.
|
|
30
|
fbet2=0
|
Relative mobility decrease due to second lateral profile.
|
|
31
|
lp2=8e-07 m
|
Characteristic length of second lateral profile.
|
|
32
|
thesrr=0.4(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to surface roughness scattering.
|
|
33
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
34
|
swthesr=0
|
Coefficient of the width dependence of THESR.
|
|
35
|
thephr=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to phonon scattering.
|
|
36
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
37
|
swtheph=0
|
Coefficient of the width dependence of THEPH.
|
|
38
|
etamobr=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion/inversion charge.
|
|
39
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
40
|
swetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
41
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
42
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
43
|
therr=0.155(n)/0.08(p) 1/V
|
|
|
|
Coefficient of the series resistance.
|
|
44
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
45
|
swther=0
|
Coefficient of the width dependence of THER.
|
|
46
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
47
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
48
|
thesatr=0.5(n)/0.2(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
49
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
50
|
slthesat=1
|
Coefficient of length dependence of THESAT.
|
|
51
|
thesatexp=1
|
Exponent of length dependence of THESAT.
|
|
52
|
swthesat=0
|
Coefficient of the width dependence of THESAT.
|
|
53
|
thethr=0.001(n)/0.0005(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
54
|
thethexp=1
|
Exponent of the length dependence of THETH.
|
|
55
|
swtheth=0
|
Coefficient of the width dependence of THETH.
|
|
56
|
sdiblo=0.0001 1/V
|
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
57
|
sdiblexp=1.35
|
Exponent of the length dependence of SDIBL.
|
|
58
|
moo=0
|
Parameter for short-channel subthreshold slope.
|
|
59
|
mor=0
|
Parameter for short-channel subthreshold slope per unit length.
|
|
60
|
moexp=1.34
|
Exponent of the length dependence of MO.
|
|
61
|
ssfr=0.00625 1/V
|
|
|
|
|
Static feedback parameter.
|
|
62
|
slssf=1
|
Coefficient of the length dependence of SSF.
|
|
63
|
swssf=0
|
Coefficient of the width dependence of SSF.
|
|
64
|
alpr=0.01
|
Factor of the channel length modulation.
|
|
65
|
slalp=1
|
Coefficient of the length dependence of ALP.
|
|
66
|
alpexp=1
|
Exponent of the length dependence of ALP.
|
|
67
|
swalp=0
|
Coefficient of the width dependence of ALP.
|
|
68
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
69
|
lmin=1.5e-07 m
|
Minimum effective channel length in technology, used for calculation of smoothing factor m.
|
|
70
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
71
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
72
|
sla1=0
|
Coefficient of the length dependence of A1.
|
|
73
|
swa1=0
|
Coefficient of the width dependence of A1.
|
|
74
|
a2r=38 V
|
Exponent of the weak-avalanche current.
|
|
75
|
sla2=0
|
Coefficient of the length dependence of A2.
|
|
76
|
swa2=0
|
Coefficient of the width dependence of A2.
|
|
77
|
a3r=1
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
78
|
sla3=0
|
Coefficient of the length dependence of A3.
|
|
79
|
swa3=0
|
Coefficient of the width dependence of A3.
|
|
80
|
iginvr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
81
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
82
|
igaccr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
83
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
84
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
85
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
86
|
igovr=0 A/V2
|
Gain factor for Source/Drain overlap gate tunneling current.
|
|
87
|
agidlr=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
88
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
89
|
stbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
90
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
91
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
92
|
col=3.2e-16 F
|
Gate overlap capacitance for a channel width of 1 um.
|
|
93
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
94
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
95
|
nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise for a channel area of 1 um^2.
|
|
96
|
nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise for a channel area of 1 um^2.
|
|
97
|
nfcr=0(n)/7.3e-08(p) 1/V
|
|
|
|
Third coefficient of the flicker noise for a channel area of 1 um^2.
|
|
98
|
dta=0 K
|
Temperature offset of the device.
|
|
99
|
csr=0
|
Factor of the Coulomb scattering.
|
|
100
|
slcs=0
|
Coefficient of the length dependence of CS.
|
|
101
|
csexp=1
|
Exponent of the length dependence of CS.
|
|
102
|
swcs=0
|
Coefficient of the width dependence of CS.
|
|
103
|
etacs=0
|
Exponent of the temperature dependence of CS.
|
|
104
|
rgo=0 Ω
|
Gate resistance.
|
|
105
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
106
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
107
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
108
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
109
|
scalelev=1.1e+04
|
flag for eldo model.
|
|
110
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
111
|
imax=1000 A
|
Explosion current.
|
|
112
|
mbeo=0.0
|
DCmatch parameter.
|
|
113
|
mvto=0.0
|
Threshold mismatch intercept.
|
|
114
|
tnom (C)
|
alias of tnom.
|
|
115
|
tref (C)
|
alias of tnom.
|
|
116
|
simkitver=3.4
|
|
|
117
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
table_ids (A)
|
Current.
|
|
49
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
50
|
table_qg (Coul)
|
Charge at g node.
|
|
51
|
table_qd (Coul)
|
Charge at d node.
|
|
52
|
table_qb (Coul)
|
Charge at b node.
|
|
53
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
54
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
55
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
56
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
a1r M-77
|
fug OP-44
|
rint M-112
|
table_vth OP-49
|
|
a2r M-81
|
gatenoise M-100
|
rout OP-40
|
tdelay M-11
|
|
a3r M-84
|
gds OP-17
|
rshg M-114
|
tempeff O-1
|
|
agidlr M-94
|
gm OP-15
|
rvpoly M-113
|
thephr M-42
|
|
alpexp M-73
|
gmb OP-16
|
scalelev M-116
|
ther1 M-53
|
|
alpr M-71
|
iavl OP-2
|
sdiblexp M-64
|
ther2 M-54
|
|
bacc M-90
|
ids OP-1
|
sdiblo M-63
|
therr M-50
|
|
beff OP-43
|
igaccr M-89
|
sl2ko M-22
|
thesatexp M-58
|
|
betsq M-32
|
igb OP-5
|
sl2phib M-30
|
thesatr M-55
|
|
bgidl M-95
|
igd OP-4
|
sl3ko M-23
|
thesrr M-39
|
|
binv M-88
|
iginvr M-87
|
sl3koexp M-24
|
thethexp M-61
|
|
cbb OP-33
|
igovr M-93
|
sla1 M-79
|
thethr M-60
|
|
cbd OP-30
|
igs OP-3
|
sla2 M-82
|
tmin M-10
|
|
cbg OP-31
|
keff OP-42
|
sla3 M-85
|
tnom M-120
|
|
cbs OP-32
|
kor M-20
|
slalp M-72
|
tox M-98
|
|
cdb OP-21
|
kov M-92
|
slcs M-107
|
tr M-17
|
|
cdd OP-18
|
kpinv M-26
|
sletabet M-34
|
tref M-121
|
|
cdg OP-19
|
l I-2
|
slko M-21
|
trise I-8
|
|
cds OP-20
|
lap M-14
|
slphib M-29
|
type M-117
|
|
cgb OP-25
|
leff OP-37
|
slssf M-69
|
u OP-39
|
|
cgd OP-22
|
level M-1
|
slthesat M-57
|
vballmsg M-9
|
|
cgdol OP-34
|
lmin M-76
|
sqrtsff OP-46
|
vbdbhigh M-6
|
|
cgg OP-23
|
lp1 M-36
|
sqrtsfw OP-45
|
vbdblow M-5
|
|
cgidl M-97
|
lp2 M-38
|
ssfr M-68
|
vbds M-4
|
|
cgs OP-24
|
lvar M-13
|
sta1 M-78
|
vbox M-3
|
|
cgsol OP-35
|
m I-10
|
stbgidl M-96
|
vbsbhigh M-8
|
|
col M-99
|
mbeo M-118
|
stetamob M-46
|
vbsblow M-7
|
|
compatible M-122
|
meff O-2
|
stop M-12
|
vds OP-6
|
|
csb OP-29
|
moexp M-67
|
stphib M-28
|
vdss OP-13
|
|
csd OP-26
|
moo M-65
|
stvfb M-19
|
vearly OP-41
|
|
csexp M-108
|
mor M-66
|
swa1 M-80
|
vfb M-18
|
|
csg OP-27
|
mos_region OP-55
|
swa2 M-83
|
vfbov M-91
|
|
csr M-106
|
mult I-1
|
swa3 M-86
|
vgs OP-7
|
|
css OP-28
|
mvto M-119
|
swalp M-74
|
vgt OP-12
|
|
ctype OP-53
|
nf I-4
|
swcs M-109
|
von OP-54
|
|
diode_region OP-56
|
nfar M-102
|
swetamob M-47
|
vp M-75
|
|
dlsil M-115
|
nfbr M-103
|
swko M-25
|
vsat OP-14
|
|
dta M-105
|
nfcr M-104
|
swphib M-31
|
vsb OP-8
|
|
etabetr M-33
|
ngcon I-5
|
swssf M-70
|
vth OP-11
|
|
etacs M-110
|
nt M-101
|
swtheph M-44
|
vto OP-9
|
|
etamobr M-45
|
nu M-48
|
swther M-52
|
vts OP-10
|
|
etaph M-43
|
nuexp M-49
|
swthesat M-59
|
w I-3
|
|
etar M-51
|
paramchk M-2
|
swthesr M-41
|
weff OP-36
|
|
etasat M-56
|
phibr M-27
|
swtheth M-62
|
wot M-16
|
|
etasr M-40
|
printscaled I-7
|
table_ids OP-48
|
wvar M-15
|
|
fbet1 M-35
|
region I-9
|
table_qb OP-52
|
xgw I-6
|
|
fbet2 M-37
|
rg OP-38
|
table_qd OP-51
|
|
|
fknee OP-47
|
rgo M-111
|
table_qg OP-50
|
|
MOS Model 11, Level 1102 (mos11020t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
Alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11020t parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
12
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
13
|
kor=0.5 V
|
Body effect coefficient for the reference transistor.
|
|
14
|
slko=0
|
Coefficient of the length dependence of KO.
|
|
15
|
sl2ko=0
|
Second coefficient of the length dependence of KO.
|
|
16
|
sl3ko=0
|
Third coefficient of the length dependence of KO.
|
|
17
|
sl3koexp=1
|
Exponent belonging to the third coefficient of the length dependence of KO.
|
|
18
|
swko=0
|
Coefficient of the width dependence of KO.
|
|
19
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
20
|
phibr=0.95 V
|
Surface potential at strong inversion.
|
|
21
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
22
|
slphib=0
|
Coefficient of the length dependence of PHIB.
|
|
23
|
sl2phib=0
|
Second coefficient of the length dependence of PHIB.
|
|
24
|
swphib=0
|
Coefficient of the width dependence of PHIB.
|
|
25
|
betsq=0.000371(n)/0.000115(p) A/V2
|
|
|
|
Gain factor for an infinite square transistor.
|
|
26
|
etabetr=1.3(n)/0.5(p)
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
27
|
sletabet=0
|
Coefficient of length dependence of ETABETR.
|
|
28
|
fbet1=0
|
Relative mobility decrease due to first lateral profile.
|
|
29
|
lp1=8e-07 m
|
Characteristic length of first lateral profile.
|
|
30
|
fbet2=0
|
Relative mobility decrease due to second lateral profile.
|
|
31
|
lp2=8e-07 m
|
Characteristic length of second lateral profile.
|
|
32
|
thesrr=0.4(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to surface roughness scattering.
|
|
33
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
34
|
swthesr=0
|
Coefficient of the width dependence of THESR.
|
|
35
|
thephr=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the mobility reduction due to phonon scattering.
|
|
36
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
37
|
swtheph=0
|
Coefficient of the width dependence of THEPH.
|
|
38
|
etamobr=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion/inversion charge.
|
|
39
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
40
|
swetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
41
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
42
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
43
|
therr=0.155(n)/0.08(p) 1/V
|
|
|
|
Coefficient of the series resistance.
|
|
44
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
45
|
swther=0
|
Coefficient of the width dependence of THER.
|
|
46
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
47
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
48
|
thesatr=0.5(n)/0.2(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
49
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
50
|
slthesat=1
|
Coefficient of length dependence of THESAT.
|
|
51
|
thesatexp=1
|
Exponent of length dependence of THESAT.
|
|
52
|
swthesat=0
|
Coefficient of the width dependence of THESAT.
|
|
53
|
thethr=0.001(n)/0.0005(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
54
|
thethexp=1
|
Exponent of the length dependence of THETH.
|
|
55
|
swtheth=0
|
Coefficient of the width dependence of THETH.
|
|
56
|
sdiblo=0.0001 1/V
|
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
57
|
sdiblexp=1.35
|
Exponent of the length dependence of SDIBL.
|
|
58
|
moo=0
|
Parameter for short-channel subthreshold slope.
|
|
59
|
mor=0
|
Parameter for short-channel subthreshold slope per unit length.
|
|
60
|
moexp=1.34
|
Exponent of the length dependence of MO.
|
|
61
|
ssfr=0.00625 1/V
|
|
|
|
|
Static feedback parameter.
|
|
62
|
slssf=1
|
Coefficient of the length dependence of SSF.
|
|
63
|
swssf=0
|
Coefficient of the width dependence of SSF.
|
|
64
|
alpr=0.01
|
Factor of the channel length modulation.
|
|
65
|
slalp=1
|
Coefficient of the length dependence of ALP.
|
|
66
|
alpexp=1
|
Exponent of the length dependence of ALP.
|
|
67
|
swalp=0
|
Coefficient of the width dependence of ALP.
|
|
68
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
69
|
lmin=1.5e-07 m
|
Minimum effective channel length in technology, used for calculation of smoothing factor m.
|
|
70
|
a1r=6
|
Factor of the weak-avalanche current.
|
|
71
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
72
|
sla1=0
|
Coefficient of the length dependence of A1.
|
|
73
|
swa1=0
|
Coefficient of the width dependence of A1.
|
|
74
|
a2r=38 V
|
Exponent of the weak-avalanche current.
|
|
75
|
sla2=0
|
Coefficient of the length dependence of A2.
|
|
76
|
swa2=0
|
Coefficient of the width dependence of A2.
|
|
77
|
a3r=1
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
78
|
sla3=0
|
Coefficient of the length dependence of A3.
|
|
79
|
swa3=0
|
Coefficient of the width dependence of A3.
|
|
80
|
iginvr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
81
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
82
|
igaccr=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
83
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
84
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
85
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
86
|
igovr=0 A/V2
|
Gain factor for Source/Drain overlap gate tunneling current.
|
|
87
|
agidlr=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
88
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
89
|
stbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
90
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
91
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
92
|
col=3.2e-16 F
|
Gate overlap capacitance for a channel width of 1 um.
|
|
93
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
94
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
95
|
nfar=1.57e+23(n)/3.83e+24(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise for a channel area of 1 um^2.
|
|
96
|
nfbr=4.75e+09(n)/1.02e+09(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise for a channel area of 1 um^2.
|
|
97
|
nfcr=0(n)/7.3e-08(p) 1/V
|
|
|
|
|
Third coefficient of the flicker noise for a channel area of 1 um^2.
|
|
98
|
dta=0 K
|
Temperature offset of the device.
|
|
99
|
csr=0
|
Factor of the Coulomb scattering.
|
|
100
|
slcs=0
|
Coefficient of the length dependence of CS.
|
|
101
|
csexp=1
|
Exponent of the length dependence of CS.
|
|
102
|
swcs=0
|
Coefficient of the width dependence of CS.
|
|
103
|
etacs=0
|
Exponent of the temperature dependence of CS.
|
|
104
|
rgo=0 Ω
|
Gate resistance.
|
|
105
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
106
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
107
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
108
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
109
|
rth=300 K/W
|
Thermal resistance.
|
|
110
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
111
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
112
|
scalelev=1.1e+04
|
flag for eldo model.
|
|
113
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
114
|
imax=1000 A
|
Explosion current.
|
|
115
|
mbeo=0.0
|
DCmatch parameter.
|
|
116
|
mvto=0.0
|
Threshold mismatch intercept.
|
|
117
|
tnom (C)
|
Alias of tnom.
|
|
118
|
tref (C)
|
Alias of tnom.
|
|
119
|
simkitver=3.4
|
|
|
120
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
Pdiss (W)
|
Dissipation.
|
|
49
|
TK (K)
|
Actual device temperature.
|
|
50
|
table_ids (A)
|
Current.
|
|
51
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
52
|
table_qg (Coul)
|
Charge at g node.
|
|
53
|
table_qd (Coul)
|
Charge at d node.
|
|
54
|
table_qb (Coul)
|
Charge at b node.
|
|
55
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
56
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
57
|
pwr (W)
|
Power.
|
|
58
|
mos_region
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth
|
|
59
|
diode_region
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-48
|
fbet1 M-35
|
region I-9
|
table_qb OP-54
|
|
TK OP-49
|
fbet2 M-37
|
rg OP-38
|
table_qd OP-53
|
|
a1r M-77
|
fknee OP-47
|
rgo M-111
|
table_qg OP-52
|
|
a2r M-81
|
fug OP-44
|
rint M-112
|
table_vth OP-51
|
|
a3r M-84
|
gatenoise M-100
|
rout OP-40
|
tdelay M-11
|
|
agidlr M-94
|
gds OP-17
|
rshg M-114
|
tempeff O-1
|
|
alpexp M-73
|
gm OP-15
|
rth M-116
|
thephr M-42
|
|
alpr M-71
|
gmb OP-16
|
rvpoly M-113
|
ther1 M-53
|
|
ath M-118
|
iavl OP-2
|
scalelev M-119
|
ther2 M-54
|
|
bacc M-90
|
ids OP-1
|
sdiblexp M-64
|
therr M-50
|
|
beff OP-43
|
igaccr M-89
|
sdiblo M-63
|
thesatexp M-58
|
|
betsq M-32
|
igb OP-5
|
sl2ko M-22
|
thesatr M-55
|
|
bgidl M-95
|
igd OP-4
|
sl2phib M-30
|
thesrr M-39
|
|
binv M-88
|
iginvr M-87
|
sl3ko M-23
|
thethexp M-61
|
|
cbb OP-33
|
igovr M-93
|
sl3koexp M-24
|
thethr M-60
|
|
cbd OP-30
|
igs OP-3
|
sla1 M-79
|
tmin M-10
|
|
cbg OP-31
|
keff OP-42
|
sla2 M-82
|
tnom M-123
|
|
cbs OP-32
|
kor M-20
|
sla3 M-85
|
tox M-98
|
|
cdb OP-21
|
kov M-92
|
slalp M-72
|
tr M-17
|
|
cdd OP-18
|
kpinv M-26
|
slcs M-107
|
tref M-124
|
|
cdg OP-19
|
l I-2
|
sletabet M-34
|
trise I-8
|
|
cds OP-20
|
lap M-14
|
slko M-21
|
type M-120
|
|
cgb OP-25
|
leff OP-37
|
slphib M-29
|
u OP-39
|
|
cgd OP-22
|
level M-1
|
slssf M-69
|
vballmsg M-9
|
|
cgdol OP-34
|
lmin M-76
|
slthesat M-57
|
vbdbhigh M-6
|
|
cgg OP-23
|
lp1 M-36
|
sqrtsff OP-46
|
vbdblow M-5
|
|
cgidl M-97
|
lp2 M-38
|
sqrtsfw OP-45
|
vbds M-4
|
|
cgs OP-24
|
lvar M-13
|
ssfr M-68
|
vbox M-3
|
|
cgsol OP-35
|
m I-10
|
sta1 M-78
|
vbsbhigh M-8
|
|
col M-99
|
mbeo M-121
|
stbgidl M-96
|
vbsblow M-7
|
|
compatible M-125
|
meff O-2
|
stetamob M-46
|
vds OP-6
|
|
csb OP-29
|
moexp M-67
|
stop M-12
|
vdss OP-13
|
|
csd OP-26
|
moo M-65
|
stphib M-28
|
vearly OP-41
|
|
csexp M-108
|
mor M-66
|
stvfb M-19
|
vfb M-18
|
|
csg OP-27
|
mos_region OP-58
|
swa1 M-80
|
vfbov M-91
|
|
csr M-106
|
mult I-1
|
swa2 M-83
|
vgs OP-7
|
|
css OP-28
|
mvto M-122
|
swa3 M-86
|
vgt OP-12
|
|
cth M-117
|
nf I-4
|
swalp M-74
|
von OP-56
|
|
ctype OP-55
|
nfar M-102
|
swcs M-109
|
vp M-75
|
|
diode_region OP-59
|
nfbr M-103
|
swetamob M-47
|
vsat OP-14
|
|
dlsil M-115
|
nfcr M-104
|
swko M-25
|
vsb OP-8
|
|
dta M-105
|
ngcon I-5
|
swphib M-31
|
vth OP-11
|
|
etabetr M-33
|
nt M-101
|
swssf M-70
|
vto OP-9
|
|
etacs M-110
|
nu M-48
|
swtheph M-44
|
vts OP-10
|
|
etamobr M-45
|
nuexp M-49
|
swther M-52
|
w I-3
|
|
etaph M-43
|
paramchk M-2
|
swthesat M-59
|
weff OP-36
|
|
etar M-51
|
phibr M-27
|
swthesr M-41
|
wot M-16
|
|
etasat M-56
|
printscaled I-7
|
swtheth M-62
|
wvar M-15
|
|
etasr M-40
|
pwr OP-57
|
table_ids OP-50
|
xgw I-6
|
MOS Model 11, Level 1102 (mos11021)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11021 parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
lmin=0 m
|
Device length low limit for binning selection.
|
|
12
|
lmax=1 m
|
Device length high limit for binning selection.
|
|
13
|
wmin=0 m
|
Device width low limit for binning selection.
|
|
14
|
wmax=1 m
|
Device width high limit for binning selection.
|
|
15
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
16
|
poko=0.5 V
|
Coefficient for the geometry independent part of KO.
|
|
17
|
plko=0 V
|
Coefficient for the length dependence of KO.
|
|
18
|
pwko=0 V
|
Coefficient for the width dependence of KO.
|
|
19
|
plwko=0 V
|
Coefficient for the length times width dependence of KO.
|
|
20
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
21
|
pophib=0.95 V
|
Coefficient for the geometric independent part of PHIB.
|
|
22
|
plphib=0 V
|
Coefficient for the length dependence of PHIB.
|
|
23
|
pwphib=0 V
|
Coefficient for the width dependence of PHIB.
|
|
24
|
plwphib=0 V
|
Coefficient for the length times width dependence of PHIB.
|
|
25
|
pobet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Coefficient for the geometry independent part of BET.
|
|
26
|
plbet=0 A/V2
|
Coefficient for the length dependence of BET.
|
|
27
|
pwbet=0 A/V2
|
Coefficient for the width dependence of BET.
|
|
28
|
plwbet=0 A/V2
|
Coefficient for the width over length dependence of BET.
|
|
29
|
pothesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESR.
|
|
30
|
plthesr=0 1/V
|
Coefficient of the length dependence of THESR.
|
|
31
|
pwthesr=0 1/V
|
Coefficient of the width dependence of THESR.
|
|
32
|
plwthesr=0 1/V
|
Coefficient of the length times width dependence of THESR.
|
|
33
|
potheph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THEPH.
|
|
34
|
pltheph=0 1/V
|
Coefficient of the length dependence of THEPH.
|
|
35
|
pwtheph=0 1/V
|
Coefficient of the width dependence of THEPH.
|
|
36
|
plwtheph=0 1/V
|
Coefficient of the length times width dependence of THEPH.
|
|
37
|
poetamob=1.4(n)/3(p)
|
|
|
|
|
Coefficient of the geometry independent part of ETAMOB.
|
|
38
|
pletamob=0
|
Coefficient of the length dependence of ETAMOB.
|
|
39
|
pwetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
40
|
plwetamob=0
|
Coefficient of the length times width dependence of ETAMOB.
|
|
41
|
pother=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THER.
|
|
42
|
plther=0 1/V
|
Coefficient of the length dependence of THER.
|
|
43
|
pwther=0 1/V
|
Coefficient of the width dependence of THER.
|
|
44
|
plwther=0 1/V
|
Coefficient of the length times width dependence of THER.
|
|
45
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
46
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
47
|
pothesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESAT.
|
|
48
|
plthesat=0 1/V
|
Coefficient of the length dependence of THESAT.
|
|
49
|
pwthesat=0 1/V
|
Coefficient of the width dependence of THESAT.
|
|
50
|
plwthesat=0 1/V
|
Coefficient of the length times width dependence of THESAT.
|
|
51
|
potheth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of the geometry independent part of THETH.
|
|
52
|
pltheth=0 1/V3
|
Coefficient of the length dependence of THETH.
|
|
53
|
pwtheth=0 1/V3
|
Coefficient of the width dependence of THETH.
|
|
54
|
plwtheth=0 1/V3
|
Coefficient of the length times width dependence of THETH.
|
|
55
|
posdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SDIBL.
|
|
56
|
plsdibl=0 1/V
|
|
|
|
|
Coefficient of the length dependence of SDIBL.
|
|
57
|
pwsdibl=0 1/V
|
|
|
|
|
Coefficient of the width dependence of SDIBL.
|
|
58
|
plwsdibl=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SDIBL.
|
|
59
|
pomo=0
|
Coefficient of the geometry independent part of MO.
|
|
60
|
plmo=0
|
Coefficient of the length dependence of MO.
|
|
61
|
pwmo=0
|
Coefficient of the width dependence of MO.
|
|
62
|
plwmo=0
|
Coefficient of the length times width dependence of MO.
|
|
63
|
possf=0.012(n)/0.01(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SSF.
|
|
64
|
plssf=0 1/V
|
Coefficient of the length dependence of SSF.
|
|
65
|
pwssf=0 1/V
|
Coefficient of the width dependence of SSF.
|
|
66
|
plwssf=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SSF.
|
|
67
|
poalp=0.025
|
Coefficient of the geometry independent part of ALP.
|
|
68
|
plalp=0
|
Coefficient of the length dependence of ALP.
|
|
69
|
pwalp=0
|
Coefficient of the width dependence of ALP.
|
|
70
|
plwalp=0
|
Coefficient of the length times width dependence of ALP.
|
|
71
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
72
|
pomexp=0.2
|
Coefficient of the geometry independent part of MEXP.
|
|
73
|
plmexp=0
|
Coefficient of the length dependence of MEXP.
|
|
74
|
pwmexp=0
|
Coefficient of the width dependence of MEXP.
|
|
75
|
plwmexp=0
|
Coefficient of the length times width dependence of MEXP.
|
|
76
|
poa1=6.02(n)/6.86(p)
|
|
|
|
|
Coefficient of the geometry independent part of A1.
|
|
77
|
pla1=0
|
Coefficient of the length dependence of A1.
|
|
78
|
pwa1=0
|
Coefficient of the width dependence of A1.
|
|
79
|
plwa1=0
|
Coefficient of the length times width dependence of A1.
|
|
80
|
poa2=38(n)/57.3(p) V
|
|
|
|
|
Coefficient of the geometry independent part of A2.
|
|
81
|
pla2=0 V
|
Coefficient of the length dependence of A2.
|
|
82
|
pwa2=0 V
|
Coefficient of the width dependence of A2.
|
|
83
|
plwa2=0 V
|
Coefficient of the length times width dependence of A2.
|
|
84
|
poa3=0.641(n)/0.425(p)
|
|
|
|
Coefficient of the geometry independent part of A3.
|
|
85
|
pla3=0
|
Coefficient of the length dependence of A3.
|
|
86
|
pwa3=0
|
Coefficient of the width dependence of A3.
|
|
87
|
plwa3=0
|
Coefficient of the length times width dependence of A3.
|
|
88
|
poiginv=0 A/V2
|
Coefficient of the geometry independent part of IGINV.
|
|
89
|
pliginv=0 A/V2
|
Coefficient of the length dependence of IGINV.
|
|
90
|
pwiginv=0 A/V2
|
Coefficient of the width dependence of IGINV.
|
|
91
|
plwiginv=0 A/V2
|
Coefficient of the length times width dependence of IGINV.
|
|
92
|
pobinv=48(n)/87.5(p) V
|
|
|
|
Coefficient of the geometry independent part of BINV.
|
|
93
|
plbinv=0 V
|
Coefficient of the length dependence of BINV.
|
|
94
|
pwbinv=0 V
|
Coefficient of the width dependence of BINV.
|
|
95
|
plwbinv=0 V
|
Coefficient of the length times width dependence of BINV.
|
|
96
|
poigacc=0 A/V2
|
Coefficient of the geometry independent part of IGACC.
|
|
97
|
pligacc=0 A/V2
|
Coefficient of the length dependence of IGACC.
|
|
98
|
pwigacc=0 A/V2
|
Coefficient of the width dependence of IGACC.
|
|
99
|
plwigacc=0 A/V2
|
Coefficient of the length times width dependence of IGACC.
|
|
100
|
pobacc=48 V
|
Coefficient of the geometry independent part of BACC.
|
|
101
|
plbacc=0 V
|
Coefficient of the length dependence of BACC.
|
|
102
|
pwbacc=0 V
|
Coefficient of the width dependence of BACC.
|
|
103
|
plwbacc=0 V
|
Coefficient of the length times width dependence of BACC.
|
|
104
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
105
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
106
|
poigov=0 A/V2
|
Coefficient of the geometry independent part of IGOV.
|
|
107
|
pligov=0 A/V2
|
Coefficient of the length dependence of IGOV.
|
|
108
|
pwigov=0 A/V2
|
Coefficient of the width dependence of IGOV.
|
|
109
|
plwigov=0 A/V2
|
Coefficient of the length times width dependence of IGOV.
|
|
110
|
poagidl=0 A/V3
|
Coefficient of the geometry independent part of AGIDL.
|
|
111
|
plagidl=0 A/V3
|
Coefficient of the length dependence of AGIDL.
|
|
112
|
pwagidl=0 A/V3
|
Coefficient of the width dependence of AGIDL.
|
|
113
|
plwagidl=0 A/V3
|
Coefficient of the length times width dependence of AGIDL.
|
|
114
|
pobgidl=41 V
|
Coefficient of the geometry independent part of BGIDL.
|
|
115
|
plbgidl=0 V
|
Coefficient of the length dependence of BGIDL.
|
|
116
|
pwbgidl=0 V
|
Coefficient of the width dependence of BGIDL.
|
|
117
|
plwbgidl=0 V
|
Coefficient of the length times width dependence of BGIDL.
|
|
118
|
pocgidl=0
|
Coefficient of the geometry independent part of CGIDL.
|
|
119
|
plcgidl=0
|
Coefficient of the length dependence of CGIDL.
|
|
120
|
pwcgidl=0
|
Coefficient of the width dependence of CGIDL.
|
|
121
|
plwcgidl=0
|
Coefficient of the length times width dependence of CGIDL.
|
|
122
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
123
|
pocox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Coefficient of the geometry independent part of COX.
|
|
124
|
plcox=0 F
|
Coefficient of the length dependence of COX.
|
|
125
|
pwcox=0 F
|
Coefficient of the width dependence of COX.
|
|
126
|
plwcox=0 F
|
Coefficient of the length times width dependence of COX.
|
|
127
|
pocgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGDO.
|
|
128
|
plcgdo=0 F
|
Coefficient of the length dependence of CGDO.
|
|
129
|
pwcgdo=0 F
|
Coefficient of the width dependence of CGDO.
|
|
130
|
plwcgdo=0 F
|
Coefficient of the length time width dependence of CGDO.
|
|
131
|
pocgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGSO.
|
|
132
|
plcgso=0 F
|
Coefficient of the length dependence of CGSO.
|
|
133
|
pwcgso=0 F
|
Coefficient of the width dependence of CGSO.
|
|
134
|
plwcgso=0 F
|
Coefficient of the length times width dependence of CGSO.
|
|
135
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
136
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
137
|
ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4
|
|
|
|
Coefficient of the geometry independent part of NFA.
|
|
138
|
plnfa=0 1/V m4
|
Coefficient of the length dependence of NFA.
|
|
139
|
pwnfa=0 1/V m4
|
Coefficient of the width dependence of NFA.
|
|
140
|
plwnfa=0 1/V m4
|
Coefficient of the length times width dependence of NFA.
|
|
141
|
ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2
|
|
|
|
Coefficient of the geometry independent part of NFB.
|
|
142
|
plnfb=0 1/V m2
|
Coefficient of the length dependence of NFB.
|
|
143
|
pwnfb=0 1/V m2
|
Coefficient of the width dependence of NFB.
|
|
144
|
plwnfb=0 1/V m2
|
Coefficient of the length times width dependence of NFB.
|
|
145
|
ponfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of NFC.
|
|
146
|
plnfc=0 1/V
|
Coefficient of the length dependence of NFC.
|
|
147
|
pwnfc=0 1/V
|
Coefficient of the width dependence of NFC.
|
|
148
|
plwnfc=0 1/V
|
Coefficient of the length times width dependence of NFC.
|
|
149
|
potvfb=0.0005 V/K
|
Coefficient of the geometry independent part of STVFB.
|
|
150
|
pltvfb=0 V/K
|
Coefficient of the length dependence of STVFB.
|
|
151
|
pwtvfb=0 V/K
|
Coefficient of the width dependence of STVFB.
|
|
152
|
plwtvfb=0 V/K
|
Coefficient of the length times width dependence of STVFB.
|
|
153
|
potphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the geometry independent part of STPHIB.
|
|
154
|
pltphib=0 V/K
|
Coefficient of the length dependence of STPHIB.
|
|
155
|
pwtphib=0 V/K
|
Coefficient of the width dependence of STPHIB.
|
|
156
|
plwtphib=0 V/K
|
Coefficient of the length times width dependence of STPHIB.
|
|
157
|
potetabet=1.3(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETABET.
|
|
158
|
pltetabet=0
|
Coefficient of the length dependence of ETABET.
|
|
159
|
pwtetabet=0
|
Coefficient of the width dependence of ETABET.
|
|
160
|
plwtetabet=0
|
Coefficient of the length times width dependence of ETABET.
|
|
161
|
potetasr=0.65(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETASR.
|
|
162
|
pltetasr=0
|
Coefficient of the length dependence of ETASR.
|
|
163
|
pwtetasr=0
|
Coefficient of the width dependence of ETASR.
|
|
164
|
plwtetasr=0
|
Coefficient of the length times width dependence of ETASR.
|
|
165
|
potetaph=1.35(n)/3.75(p)
|
|
|
|
Coefficient of the geometry independent part of ETAPH.
|
|
166
|
pltetaph=0
|
Coefficient of the length dependence of ETAPH.
|
|
167
|
pwtetaph=0
|
Coefficient of the width dependence of ETAPH.
|
|
168
|
plwtetaph=0
|
Coefficient of the length times width dependence of ETAPH.
|
|
169
|
potetamob=0 1/K
|
Coefficient of the geometry independent part of STETAMOB.
|
|
170
|
pltetamob=0 1/K
|
Coefficient of the length dependence of STETAMOB.
|
|
171
|
pwtetamob=0 1/K
|
Coefficient of the width dependence of STETAMOB.
|
|
172
|
plwtetamob=0 1/K
|
Coefficient of the length times width dependence of STETAMOB.
|
|
173
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
174
|
potnuexp=5.25(n)/3.23(p)
|
|
|
|
Coefficient of the geometry independent part of NUEXP.
|
|
175
|
pltnuexp=0
|
Coefficient of the length dependence of NUEXP.
|
|
176
|
pwtnuexp=0
|
Coefficient of the width dependence of NUEXP.
|
|
177
|
plwtnuexp=0
|
Coefficient of the length times width dependence of NUEXP.
|
|
178
|
potetar=0.95(n)/0.4(p)
|
|
|
|
Coefficient of the geometry independent part of ETAR.
|
|
179
|
pltetar=0
|
Coefficient of the length dependence of ETAR.
|
|
180
|
pwtetar=0
|
Coefficient of the width dependence of ETAR.
|
|
181
|
plwtetar=0
|
Coefficient of the length times width dependence of ETAR.
|
|
182
|
potetasat=1.04(n)/0.86(p)
|
|
|
|
Coefficient of the geometry independent part of ETASAT.
|
|
183
|
pltetasat=0
|
Coefficient of the length dependence of ETASAT.
|
|
184
|
pwtetasat=0
|
Coefficient of the width dependence of ETASAT.
|
|
185
|
plwtetasat=0
|
Coefficient of the length times width dependence of ETASAT.
|
|
186
|
pota1=0 1/K
|
Coefficient of the geometry independent part of STA1.
|
|
187
|
plta1=0 1/K
|
Coefficient of the length dependence of STA1.
|
|
188
|
pwta1=0 1/K
|
Coefficient of the width dependence of STA1.
|
|
189
|
plwta1=0 1/K
|
Coefficient of the length times width dependence of STA1.
|
|
190
|
potbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the geometry independent part of STBGIDL.
|
|
191
|
pltbgidl=0 V/K
|
Coefficient of the length dependence of STBGIDL.
|
|
192
|
pwtbgidl=0 V/K
|
Coefficient of the width dependence of STBGIDL.
|
|
193
|
plwtbgidl=0 V/K
|
Coefficient of the length times width dependence of STBGIDL.
|
|
194
|
dta=0 K
|
Temperature offset of the device.
|
|
195
|
pocs=0
|
Coefficient of the geometry independent part of CS.
|
|
196
|
plcs=0
|
Coefficient of the length dependence of CS.
|
|
197
|
pwcs=0
|
Coefficient of the width dependence of CS.
|
|
198
|
plwcs=0
|
Coefficient of the length times width dependence of CS.
|
|
199
|
potetacs=0
|
Coefficient of the geometry independent part of ETACS.
|
|
200
|
pltetacs=0
|
Coefficient of the length dependence of ETACS.
|
|
201
|
pwtetacs=0
|
Coefficient of the width dependence of ETACS.
|
|
202
|
plwtetacs=0
|
Coefficient of the length times width dependence of ETACS.
|
|
203
|
rgo=0 Ω
|
Gate resistance.
|
|
204
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
205
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
206
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
207
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
208
|
scalelev=1.1e+04
|
flag for eldo model.
|
|
209
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
210
|
imax=1000 A
|
Explosion current.
|
|
211
|
mbeo=0.0
|
DCmatch parameter.
|
|
212
|
mvto=0.0
|
Threshold mismatch intercept.
|
|
213
|
tnom (C)
|
Alias of tnom.
|
|
214
|
tref (C)
|
Alias of tnom.
|
|
215
|
simkitver=3.4
|
|
|
216
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
table_ids (A)
|
Current.
|
|
49
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
50
|
table_qg (Coul)
|
Charge at g node.
|
|
51
|
table_qd (Coul)
|
Charge at d node.
|
|
52
|
table_qb (Coul)
|
Charge at b node.
|
|
53
|
BET (A/V2)
|
Gain factor.
|
|
54
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
55
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
56
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
57
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BET OP-53
|
pliginv M-96
|
poa2 M-87
|
pwtetabet M-166
|
|
beff OP-43
|
pligov M-114
|
poa3 M-91
|
pwtetacs M-208
|
|
cbb OP-33
|
plko M-24
|
poagidl M-117
|
pwtetamob M-178
|
|
cbd OP-30
|
plmexp M-80
|
poalp M-74
|
pwtetaph M-174
|
|
cbg OP-31
|
plmo M-67
|
pobacc M-107
|
pwtetar M-187
|
|
cbs OP-32
|
plnfa M-145
|
pobet M-32
|
pwtetasat M-191
|
|
cdb OP-21
|
plnfb M-149
|
pobgidl M-121
|
pwtetasr M-170
|
|
cdd OP-18
|
plnfc M-153
|
pobinv M-99
|
pwtheph M-42
|
|
cdg OP-19
|
plphib M-29
|
pocgdo M-134
|
pwther M-50
|
|
cds OP-20
|
plsdibl M-63
|
pocgidl M-125
|
pwthesat M-56
|
|
cgb OP-25
|
plssf M-71
|
pocgso M-138
|
pwthesr M-38
|
|
cgd OP-22
|
plta1 M-194
|
pocox M-130
|
pwtheth M-60
|
|
cgdol OP-34
|
pltbgidl M-198
|
pocs M-202
|
pwtnuexp M-183
|
|
cgg OP-23
|
pltetabet M-165
|
poetamob M-44
|
pwtphib M-162
|
|
cgs OP-24
|
pltetacs M-207
|
poigacc M-103
|
pwtvfb M-158
|
|
cgsol OP-35
|
pltetamob M-177
|
poiginv M-95
|
region I-9
|
|
compatible M-221
|
pltetaph M-173
|
poigov M-113
|
rg OP-38
|
|
csb OP-29
|
pltetar M-186
|
poko M-23
|
rgo M-210
|
|
csd OP-26
|
pltetasat M-190
|
pomexp M-79
|
rint M-211
|
|
csg OP-27
|
pltetasr M-169
|
pomo M-66
|
rout OP-40
|
|
css OP-28
|
pltheph M-41
|
ponfa M-144
|
rshg M-213
|
|
ctype OP-54
|
plther M-49
|
ponfb M-148
|
rvpoly M-212
|
|
diode_region OP-57
|
plthesat M-55
|
ponfc M-152
|
scalelev M-215
|
|
dlsil M-214
|
plthesr M-37
|
pophib M-28
|
sqrtsff OP-46
|
|
dta M-201
|
pltheth M-59
|
posdibl M-62
|
sqrtsfw OP-45
|
|
fknee OP-47
|
pltnuexp M-182
|
possf M-70
|
stop M-12
|
|
fug OP-44
|
pltphib M-161
|
pota1 M-193
|
table_ids OP-48
|
|
gatenoise M-142
|
pltvfb M-157
|
potbgidl M-197
|
table_qb OP-52
|
|
gds OP-17
|
plwa1 M-86
|
potetabet M-164
|
table_qd OP-51
|
|
gm OP-15
|
plwa2 M-90
|
potetacs M-206
|
table_qg OP-50
|
|
gmb OP-16
|
plwa3 M-94
|
potetamob M-176
|
table_vth OP-49
|
|
iavl OP-2
|
plwagidl M-120
|
potetaph M-172
|
tdelay M-11
|
|
ids OP-1
|
plwalp M-77
|
potetar M-185
|
tempeff O-1
|
|
igb OP-5
|
plwbacc M-110
|
potetasat M-189
|
ther1 M-52
|
|
igd OP-4
|
plwbet M-35
|
potetasr M-168
|
ther2 M-53
|
|
igs OP-3
|
plwbgidl M-124
|
potheph M-40
|
tmin M-10
|
|
keff OP-42
|
plwbinv M-102
|
pother M-48
|
tnom M-219
|
|
kov M-112
|
plwcgdo M-137
|
pothesat M-54
|
tox M-129
|
|
kpinv M-27
|
plwcgidl M-128
|
pothesr M-36
|
tr M-17
|
|
l I-2
|
plwcgso M-141
|
potheth M-58
|
tref M-220
|
|
lap M-14
|
plwcox M-133
|
potnuexp M-181
|
trise I-8
|
|
leff OP-37
|
plwcs M-205
|
potphib M-160
|
type M-216
|
|
level M-1
|
plwetamob M-47
|
potvfb M-156
|
u OP-39
|
|
lmax M-19
|
plwigacc M-106
|
printscaled I-7
|
vballmsg M-9
|
|
lmin M-18
|
plwiginv M-98
|
pwa1 M-85
|
vbdbhigh M-6
|
|
lvar M-13
|
plwigov M-116
|
pwa2 M-89
|
vbdblow M-5
|
|
m I-10
|
plwko M-26
|
pwa3 M-93
|
vbds M-4
|
|
mbeo M-217
|
plwmexp M-82
|
pwagidl M-119
|
vbox M-3
|
|
meff O-2
|
plwmo M-69
|
pwalp M-76
|
vbsbhigh M-8
|
|
mos_region OP-56
|
plwnfa M-147
|
pwbacc M-109
|
vbsblow M-7
|
|
mult I-1
|
plwnfb M-151
|
pwbet M-34
|
vds OP-6
|
|
mvto M-218
|
plwnfc M-155
|
pwbgidl M-123
|
vdss OP-13
|
|
nf I-4
|
plwphib M-31
|
pwbinv M-101
|
vearly OP-41
|
|
ngcon I-5
|
plwsdibl M-65
|
pwcgdo M-136
|
vfb M-22
|
|
nt M-143
|
plwssf M-73
|
pwcgidl M-127
|
vfbov M-111
|
|
nu M-180
|
plwta1 M-196
|
pwcgso M-140
|
vgs OP-7
|
|
paramchk M-2
|
plwtbgidl M-200
|
pwcox M-132
|
vgt OP-12
|
|
pla1 M-84
|
plwtetabet M-167
|
pwcs M-204
|
von OP-55
|
|
pla2 M-88
|
plwtetacs M-209
|
pwetamob M-46
|
vp M-78
|
|
pla3 M-92
|
plwtetamob M-179
|
pwigacc M-105
|
vsat OP-14
|
|
plagidl M-118
|
plwtetaph M-175
|
pwiginv M-97
|
vsb OP-8
|
|
plalp M-75
|
plwtetar M-188
|
pwigov M-115
|
vth OP-11
|
|
plbacc M-108
|
plwtetasat M-192
|
pwko M-25
|
vto OP-9
|
|
plbet M-33
|
plwtetasr M-171
|
pwmexp M-81
|
vts OP-10
|
|
plbgidl M-122
|
plwtheph M-43
|
pwmo M-68
|
w I-3
|
|
plbinv M-100
|
plwther M-51
|
pwnfa M-146
|
weff OP-36
|
|
plcgdo M-135
|
plwthesat M-57
|
pwnfb M-150
|
wmax M-21
|
|
plcgidl M-126
|
plwthesr M-39
|
pwnfc M-154
|
wmin M-20
|
|
plcgso M-139
|
plwtheth M-61
|
pwphib M-30
|
wot M-16
|
|
plcox M-131
|
plwtnuexp M-184
|
pwsdibl M-64
|
wvar M-15
|
|
plcs M-203
|
plwtphib M-163
|
pwssf M-72
|
xgw I-6
|
|
pletamob M-45
|
plwtvfb M-159
|
pwta1 M-195
|
|
|
pligacc M-104
|
poa1 M-83
|
pwtbgidl M-199
|
|
MOS Model 11, Level 1102 (mos11021t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
l=2e-06 m
|
Drawn channel length in the layout. Scale set by option scale.
|
|
3
|
w=1e-05 m
|
Drawn channel width in the layout. Scale set by option scale.
|
|
4
|
nf=1
|
Number of fingers.
|
|
5
|
ngcon=1
|
Number of gate contacts.
|
|
6
|
xgw=1e-07 m
|
Distance from the gate contact to the channel edge.
|
|
7
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
8
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
9
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
10
|
m=1
|
Alias of mult.
|
|
11
|
mos_region=SUBTHRESHOLD
|
|
12
|
diode_region=ON
|
|
Model Definition
model modelName mos11021t parameter=value ...
Model Parameters
|
1
|
level=1.1e+04
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
lvar=0 m
|
Difference between the actual and the programmed poly-silicon gate length.
|
|
7
|
lap=4e-08 m
|
Effective channel length reduction per side.
|
|
8
|
wvar=0 m
|
Difference between the actual and the programmed field-oxide opening.
|
|
9
|
wot=0 m
|
Effective channel width reduction per side.
|
|
10
|
tr=21 C
|
Reference temperature.
|
|
11
|
lmin=0 m
|
Device length low limit for binning selection.
|
|
12
|
lmax=1 m
|
Device length high limit for binning selection.
|
|
13
|
wmin=0 m
|
Device width low limit for binning selection.
|
|
14
|
wmax=1 m
|
Device width high limit for binning selection.
|
|
15
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
16
|
poko=0.5 V
|
Coefficient for the geometry independent part of KO.
|
|
17
|
plko=0 V
|
Coefficient for the length dependence of KO.
|
|
18
|
pwko=0 V
|
Coefficient for the width dependence of KO.
|
|
19
|
plwko=0 V
|
Coefficient for the length times width dependence of KO.
|
|
20
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
21
|
pophib=0.95 V
|
Coefficient for the geometric independent part of PHIB.
|
|
22
|
plphib=0 V
|
Coefficient for the length dependence of PHIB.
|
|
23
|
pwphib=0 V
|
Coefficient for the width dependence of PHIB.
|
|
24
|
plwphib=0 V
|
Coefficient for the length times width dependence of PHIB.
|
|
25
|
pobet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Coefficient for the geometry independent part of BET.
|
|
26
|
plbet=0 A/V2
|
Coefficient for the length dependence of BET.
|
|
27
|
pwbet=0 A/V2
|
Coefficient for the width dependence of BET.
|
|
28
|
plwbet=0 A/V2
|
Coefficient for the width over length dependence of BET.
|
|
29
|
pothesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESR.
|
|
30
|
plthesr=0 1/V
|
Coefficient of the length dependence of THESR.
|
|
31
|
pwthesr=0 1/V
|
Coefficient of the width dependence of THESR.
|
|
32
|
plwthesr=0 1/V
|
Coefficient of the length times width dependence of THESR.
|
|
33
|
potheph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THEPH.
|
|
34
|
pltheph=0 1/V
|
Coefficient of the length dependence of THEPH.
|
|
35
|
pwtheph=0 1/V
|
Coefficient of the width dependence of THEPH.
|
|
36
|
plwtheph=0 1/V
|
Coefficient of the length times width dependence of THEPH.
|
|
37
|
poetamob=1.4(n)/3(p)
|
|
|
|
|
Coefficient of the geometry independent part of ETAMOB.
|
|
38
|
pletamob=0
|
Coefficient of the length dependence of ETAMOB.
|
|
39
|
pwetamob=0
|
Coefficient of the width dependence of ETAMOB.
|
|
40
|
plwetamob=0
|
Coefficient of the length times width dependence of ETAMOB.
|
|
41
|
pother=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THER.
|
|
42
|
plther=0 1/V
|
Coefficient of the length dependence of THER.
|
|
43
|
pwther=0 1/V
|
Coefficient of the width dependence of THER.
|
|
44
|
plwther=0 1/V
|
Coefficient of the length times width dependence of THER.
|
|
45
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
46
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
47
|
pothesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of THESAT.
|
|
48
|
plthesat=0 1/V
|
Coefficient of the length dependence of THESAT.
|
|
49
|
pwthesat=0 1/V
|
Coefficient of the width dependence of THESAT.
|
|
50
|
plwthesat=0 1/V
|
Coefficient of the length times width dependence of THESAT.
|
|
51
|
potheth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of the geometry independent part of THETH.
|
|
52
|
pltheth=0 1/V3
|
Coefficient of the length dependence of THETH.
|
|
53
|
pwtheth=0 1/V3
|
Coefficient of the width dependence of THETH.
|
|
54
|
plwtheth=0 1/V3
|
Coefficient of the length times width dependence of THETH.
|
|
55
|
posdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SDIBL.
|
|
56
|
plsdibl=0 1/V
|
|
|
|
|
Coefficient of the length dependence of SDIBL.
|
|
57
|
pwsdibl=0 1/V
|
|
|
|
|
Coefficient of the width dependence of SDIBL.
|
|
58
|
plwsdibl=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SDIBL.
|
|
59
|
pomo=0
|
Coefficient of the geometry independent part of MO.
|
|
60
|
plmo=0
|
Coefficient of the length dependence of MO.
|
|
61
|
pwmo=0
|
Coefficient of the width dependence of MO.
|
|
62
|
plwmo=0
|
Coefficient of the length times width dependence of MO.
|
|
63
|
possf=0.012(n)/0.01(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of SSF.
|
|
64
|
plssf=0 1/V
|
Coefficient of the length dependence of SSF.
|
|
65
|
pwssf=0 1/V
|
Coefficient of the width dependence of SSF.
|
|
66
|
plwssf=0 1/V
|
|
|
|
|
Coefficient of the length times width dependence of SSF.
|
|
67
|
poalp=0.025
|
Coefficient of the geometry independent part of ALP.
|
|
68
|
plalp=0
|
Coefficient of the length dependence of ALP.
|
|
69
|
pwalp=0
|
Coefficient of the width dependence of ALP.
|
|
70
|
plwalp=0
|
Coefficient of the length times width dependence of ALP.
|
|
71
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
72
|
pomexp=0.2
|
Coefficient of the geometry independent part of MEXP.
|
|
73
|
plmexp=0
|
Coefficient of the length dependence of MEXP.
|
|
74
|
pwmexp=0
|
Coefficient of the width dependence of MEXP.
|
|
75
|
plwmexp=0
|
Coefficient of the length times width dependence of MEXP.
|
|
76
|
poa1=6.02(n)/6.86(p)
|
|
|
|
|
Coefficient of the geometry independent part of A1.
|
|
77
|
pla1=0
|
Coefficient of the length dependence of A1.
|
|
78
|
pwa1=0
|
Coefficient of the width dependence of A1.
|
|
79
|
plwa1=0
|
Coefficient of the length times width dependence of A1.
|
|
80
|
poa2=38(n)/57.3(p) V
|
|
|
|
|
Coefficient of the geometry independent part of A2.
|
|
81
|
pla2=0 V
|
Coefficient of the length dependence of A2.
|
|
82
|
pwa2=0 V
|
Coefficient of the width dependence of A2.
|
|
83
|
plwa2=0 V
|
Coefficient of the length times width dependence of A2.
|
|
84
|
poa3=0.641(n)/0.425(p)
|
|
|
|
Coefficient of the geometry independent part of A3.
|
|
85
|
pla3=0
|
Coefficient of the length dependence of A3.
|
|
86
|
pwa3=0
|
Coefficient of the width dependence of A3.
|
|
87
|
plwa3=0
|
Coefficient of the length times width dependence of A3.
|
|
88
|
poiginv=0 A/V2
|
Coefficient of the geometry independent part of IGINV.
|
|
89
|
pliginv=0 A/V2
|
Coefficient of the length dependence of IGINV.
|
|
90
|
pwiginv=0 A/V2
|
Coefficient of the width dependence of IGINV.
|
|
91
|
plwiginv=0 A/V2
|
Coefficient of the length times width dependence of IGINV.
|
|
92
|
pobinv=48(n)/87.5(p) V
|
|
|
|
Coefficient of the geometry independent part of BINV.
|
|
93
|
plbinv=0 V
|
Coefficient of the length dependence of BINV.
|
|
94
|
pwbinv=0 V
|
Coefficient of the width dependence of BINV.
|
|
95
|
plwbinv=0 V
|
Coefficient of the length times width dependence of BINV.
|
|
96
|
poigacc=0 A/V2
|
Coefficient of the geometry independent part of IGACC.
|
|
97
|
pligacc=0 A/V2
|
Coefficient of the length dependence of IGACC.
|
|
98
|
pwigacc=0 A/V2
|
Coefficient of the width dependence of IGACC.
|
|
99
|
plwigacc=0 A/V2
|
Coefficient of the length times width dependence of IGACC.
|
|
100
|
pobacc=48 V
|
Coefficient of the geometry independent part of BACC.
|
|
101
|
plbacc=0 V
|
Coefficient of the length dependence of BACC.
|
|
102
|
pwbacc=0 V
|
Coefficient of the width dependence of BACC.
|
|
103
|
plwbacc=0 V
|
Coefficient of the length times width dependence of BACC.
|
|
104
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
105
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
106
|
poigov=0 A/V2
|
Coefficient of the geometry independent part of IGOV.
|
|
107
|
pligov=0 A/V2
|
Coefficient of the length dependence of IGOV.
|
|
108
|
pwigov=0 A/V2
|
Coefficient of the width dependence of IGOV.
|
|
109
|
plwigov=0 A/V2
|
Coefficient of the length times width dependence of IGOV.
|
|
110
|
poagidl=0 A/V3
|
Coefficient of the geometry independent part of AGIDL.
|
|
111
|
plagidl=0 A/V3
|
Coefficient of the length dependence of AGIDL.
|
|
112
|
pwagidl=0 A/V3
|
Coefficient of the width dependence of AGIDL.
|
|
113
|
plwagidl=0 A/V3
|
Coefficient of the length times width dependence of AGIDL.
|
|
114
|
pobgidl=41 V
|
Coefficient of the geometry independent part of BGIDL.
|
|
115
|
plbgidl=0 V
|
Coefficient of the length dependence of BGIDL.
|
|
116
|
pwbgidl=0 V
|
Coefficient of the width dependence of BGIDL.
|
|
117
|
plwbgidl=0 V
|
Coefficient of the length times width dependence of BGIDL.
|
|
118
|
pocgidl=0
|
Coefficient of the geometry independent part of CGIDL.
|
|
119
|
plcgidl=0
|
Coefficient of the length dependence of CGIDL.
|
|
120
|
pwcgidl=0
|
Coefficient of the width dependence of CGIDL.
|
|
121
|
plwcgidl=0
|
Coefficient of the length times width dependence of CGIDL.
|
|
122
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
123
|
pocox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Coefficient of the geometry independent part of COX.
|
|
124
|
plcox=0 F
|
Coefficient of the length dependence of COX.
|
|
125
|
pwcox=0 F
|
Coefficient of the width dependence of COX.
|
|
126
|
plwcox=0 F
|
Coefficient of the length times width dependence of COX.
|
|
127
|
pocgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGDO.
|
|
128
|
plcgdo=0 F
|
Coefficient of the length dependence of CGDO.
|
|
129
|
pwcgdo=0 F
|
Coefficient of the width dependence of CGDO.
|
|
130
|
plwcgdo=0 F
|
Coefficient of the length time width dependence of CGDO.
|
|
131
|
pocgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Coefficient of the geometry independent part of CGSO.
|
|
132
|
plcgso=0 F
|
Coefficient of the length dependence of CGSO.
|
|
133
|
pwcgso=0 F
|
Coefficient of the width dependence of CGSO.
|
|
134
|
plwcgso=0 F
|
Coefficient of the length times width dependence of CGSO.
|
|
135
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
136
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
137
|
ponfa=8.32e+22(n)/1.9e+22(p) 1/V m4
|
|
|
|
Coefficient of the geometry independent part of NFA.
|
|
138
|
plnfa=0 1/V m4
|
Coefficient of the length dependence of NFA.
|
|
139
|
pwnfa=0 1/V m4
|
Coefficient of the width dependence of NFA.
|
|
140
|
plwnfa=0 1/V m4
|
Coefficient of the length times width dependence of NFA.
|
|
141
|
ponfb=2.51e+07(n)/5.04e+06(p) 1/V m2
|
|
|
|
Coefficient of the geometry independent part of NFB.
|
|
142
|
plnfb=0 1/V m2
|
Coefficient of the length dependence of NFB.
|
|
143
|
pwnfb=0 1/V m2
|
Coefficient of the width dependence of NFB.
|
|
144
|
plwnfb=0 1/V m2
|
Coefficient of the length times width dependence of NFB.
|
|
145
|
ponfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Coefficient of the geometry independent part of NFC.
|
|
146
|
plnfc=0 1/V
|
Coefficient of the length dependence of NFC.
|
|
147
|
pwnfc=0 1/V
|
Coefficient of the width dependence of NFC.
|
|
148
|
plwnfc=0 1/V
|
Coefficient of the length times width dependence of NFC.
|
|
149
|
potvfb=0.0005 V/K
|
Coefficient of the geometry independent part of STVFB.
|
|
150
|
pltvfb=0 V/K
|
Coefficient of the length dependence of STVFB.
|
|
151
|
pwtvfb=0 V/K
|
Coefficient of the width dependence of STVFB.
|
|
152
|
plwtvfb=0 V/K
|
Coefficient of the length times width dependence of STVFB.
|
|
153
|
potphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the geometry independent part of STPHIB.
|
|
154
|
pltphib=0 V/K
|
Coefficient of the length dependence of STPHIB.
|
|
155
|
pwtphib=0 V/K
|
Coefficient of the width dependence of STPHIB.
|
|
156
|
plwtphib=0 V/K
|
Coefficient of the length times width dependence of STPHIB.
|
|
157
|
potetabet=1.3(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETABET.
|
|
158
|
pltetabet=0
|
Coefficient of the length dependence of ETABET.
|
|
159
|
pwtetabet=0
|
Coefficient of the width dependence of ETABET.
|
|
160
|
plwtetabet=0
|
Coefficient of the length times width dependence of ETABET.
|
|
161
|
potetasr=0.65(n)/0.5(p)
|
|
|
|
Coefficient of the geometry independent part of ETASR.
|
|
162
|
pltetasr=0
|
Coefficient of the length dependence of ETASR.
|
|
163
|
pwtetasr=0
|
Coefficient of the width dependence of ETASR.
|
|
164
|
plwtetasr=0
|
Coefficient of the length times width dependence of ETASR.
|
|
165
|
potetaph=1.35(n)/3.75(p)
|
|
|
|
Coefficient of the geometry independent part of ETAPH.
|
|
166
|
pltetaph=0
|
Coefficient of the length dependence of ETAPH.
|
|
167
|
pwtetaph=0
|
Coefficient of the width dependence of ETAPH.
|
|
168
|
plwtetaph=0
|
Coefficient of the length times width dependence of ETAPH.
|
|
169
|
potetamob=0 1/K
|
Coefficient of the geometry independent part of STETAMOB.
|
|
170
|
pltetamob=0 1/K
|
Coefficient of the length dependence of STETAMOB.
|
|
171
|
pwtetamob=0 1/K
|
Coefficient of the width dependence of STETAMOB.
|
|
172
|
plwtetamob=0 1/K
|
Coefficient of the length times width dependence of STETAMOB.
|
|
173
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
174
|
potnuexp=5.25(n)/3.23(p)
|
|
|
|
Coefficient of the geometry independent part of NUEXP.
|
|
175
|
pltnuexp=0
|
Coefficient of the length dependence of NUEXP.
|
|
176
|
pwtnuexp=0
|
Coefficient of the width dependence of NUEXP.
|
|
177
|
plwtnuexp=0
|
Coefficient of the length times width dependence of NUEXP.
|
|
178
|
potetar=0.95(n)/0.4(p)
|
|
|
|
Coefficient of the geometry independent part of ETAR.
|
|
179
|
pltetar=0
|
Coefficient of the length dependence of ETAR.
|
|
180
|
pwtetar=0
|
Coefficient of the width dependence of ETAR.
|
|
181
|
plwtetar=0
|
Coefficient of the length times width dependence of ETAR.
|
|
182
|
potetasat=1.04(n)/0.86(p)
|
|
|
|
Coefficient of the geometry independent part of ETASAT.
|
|
183
|
pltetasat=0
|
Coefficient of the length dependence of ETASAT.
|
|
184
|
pwtetasat=0
|
Coefficient of the width dependence of ETASAT.
|
|
185
|
plwtetasat=0
|
Coefficient of the length times width dependence of ETASAT.
|
|
186
|
pota1=0 1/K
|
Coefficient of the geometry independent part of STA1.
|
|
187
|
plta1=0 1/K
|
Coefficient of the length dependence of STA1.
|
|
188
|
pwta1=0 1/K
|
Coefficient of the width dependence of STA1.
|
|
189
|
plwta1=0 1/K
|
Coefficient of the length times width dependence of STA1.
|
|
190
|
potbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the geometry independent part of STBGIDL.
|
|
191
|
pltbgidl=0 V/K
|
Coefficient of the length dependence of STBGIDL.
|
|
192
|
pwtbgidl=0 V/K
|
Coefficient of the width dependence of STBGIDL.
|
|
193
|
plwtbgidl=0 V/K
|
Coefficient of the length times width dependence of STBGIDL.
|
|
194
|
dta=0 K
|
Temperature offset of the device.
|
|
195
|
pocs=0
|
Coefficient of the geometry independent part of CS.
|
|
196
|
plcs=0
|
Coefficient of the length dependence of CS.
|
|
197
|
pwcs=0
|
Coefficient of the width dependence of CS.
|
|
198
|
plwcs=0
|
Coefficient of the length times width dependence of CS.
|
|
199
|
potetacs=0
|
Coefficient of the geometry independent part of ETACS.
|
|
200
|
pltetacs=0
|
Coefficient of the length dependence of ETACS.
|
|
201
|
pwtetacs=0
|
Coefficient of the width dependence of ETACS.
|
|
202
|
plwtetacs=0
|
Coefficient of the length times width dependence of ETACS.
|
|
203
|
rgo=0 Ω
|
Gate resistance.
|
|
204
|
rint=0 Ω m2
|
Contact resistance between silicide and poly.
|
|
205
|
rvpoly=0 Ω m2
|
Vertical poly resistance.
|
|
206
|
rshg=0 Ω/Sqr
|
Gate electrode diffusion sheet resistance.
|
|
207
|
dlsil=0 m
|
Silicide extension over the physical gate length.
|
|
208
|
rth=300 K/W
|
Thermal resistance.
|
|
209
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
210
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
211
|
scalelev=1.1e+04
|
flag for eldo model.
|
|
212
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
213
|
imax=1000 A
|
Explosion current.
|
|
214
|
mbeo=0.0
|
DCmatch parameter.
|
|
215
|
mvto=0.0
|
Threshold mismatch intercept.
|
|
216
|
tnom (C)
|
Alias of tnom.
|
|
217
|
tref (C)
|
Alias of tnom.
|
|
218
|
simkitver=3.4
|
|
|
219
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
weff (m)
|
Effective channel width for geometrical models.
|
|
37
|
leff (m)
|
Effective channel length for geometrical models.
|
|
38
|
rg (Ω)
|
Gate resistance.
|
|
39
|
u
|
Transistor gain (gm/gds).
|
|
40
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
41
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
42
|
keff (V )
|
Body effect parameter.
|
|
43
|
beff (A/V2)
|
Gain factor.
|
|
44
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
45
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
46
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
47
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
48
|
Pdiss (W)
|
Dissipation.
|
|
49
|
TK (K)
|
Actual device temperature.
|
|
50
|
table_ids (A)
|
Current.
|
|
51
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
52
|
table_qg (Coul)
|
Charge at g node.
|
|
53
|
table_qd (Coul)
|
Charge at d node.
|
|
54
|
table_qb (Coul)
|
Charge at b node.
|
|
55
|
BET (A/V2)
|
Gain factor.
|
|
56
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
57
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
58
|
pwr (W)
|
Power.
|
|
59
|
mos_region
|
MOS region. Possible values are off, sat, triode, and subth
|
|
60
|
diode_region
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
BET OP-55
|
plcs M-203
|
plwtvfb M-159
|
pwta1 M-195
|
|
Pdiss OP-48
|
pletamob M-45
|
poa1 M-83
|
pwtbgidl M-199
|
|
TK OP-49
|
pligacc M-104
|
poa2 M-87
|
pwtetabet M-166
|
|
ath M-217
|
pliginv M-96
|
poa3 M-91
|
pwtetacs M-208
|
|
beff OP-43
|
pligov M-114
|
poagidl M-117
|
pwtetamob M-178
|
|
cbb OP-33
|
plko M-24
|
poalp M-74
|
pwtetaph M-174
|
|
cbd OP-30
|
plmexp M-80
|
pobacc M-107
|
pwtetar M-187
|
|
cbg OP-31
|
plmo M-67
|
pobet M-32
|
pwtetasat M-191
|
|
cbs OP-32
|
plnfa M-145
|
pobgidl M-121
|
pwtetasr M-170
|
|
cdb OP-21
|
plnfb M-149
|
pobinv M-99
|
pwtheph M-42
|
|
cdd OP-18
|
plnfc M-153
|
pocgdo M-134
|
pwther M-50
|
|
cdg OP-19
|
plphib M-29
|
pocgidl M-125
|
pwthesat M-56
|
|
cds OP-20
|
plsdibl M-63
|
pocgso M-138
|
pwthesr M-38
|
|
cgb OP-25
|
plssf M-71
|
pocox M-130
|
pwtheth M-60
|
|
cgd OP-22
|
plta1 M-194
|
pocs M-202
|
pwtnuexp M-183
|
|
cgdol OP-34
|
pltbgidl M-198
|
poetamob M-44
|
pwtphib M-162
|
|
cgg OP-23
|
pltetabet M-165
|
poigacc M-103
|
pwtvfb M-158
|
|
cgs OP-24
|
pltetacs M-207
|
poiginv M-95
|
region I-9
|
|
cgsol OP-35
|
pltetamob M-177
|
poigov M-113
|
rg OP-38
|
|
compatible M-224
|
pltetaph M-173
|
poko M-23
|
rgo M-210
|
|
csb OP-29
|
pltetar M-186
|
pomexp M-79
|
rint M-211
|
|
csd OP-26
|
pltetasat M-190
|
pomo M-66
|
rout OP-40
|
|
csg OP-27
|
pltetasr M-169
|
ponfa M-144
|
rshg M-213
|
|
css OP-28
|
pltheph M-41
|
ponfb M-148
|
rth M-215
|
|
cth M-216
|
plther M-49
|
ponfc M-152
|
rvpoly M-212
|
|
ctype OP-56
|
plthesat M-55
|
pophib M-28
|
scalelev M-218
|
|
diode_region OP-60
|
plthesr M-37
|
posdibl M-62
|
sqrtsff OP-46
|
|
dlsil M-214
|
pltheth M-59
|
possf M-70
|
sqrtsfw OP-45
|
|
dta M-201
|
pltnuexp M-182
|
pota1 M-193
|
stop M-12
|
|
fknee OP-47
|
pltphib M-161
|
potbgidl M-197
|
table_ids OP-50
|
|
fug OP-44
|
pltvfb M-157
|
potetabet M-164
|
table_qb OP-54
|
|
gatenoise M-142
|
plwa1 M-86
|
potetacs M-206
|
table_qd OP-53
|
|
gds OP-17
|
plwa2 M-90
|
potetamob M-176
|
table_qg OP-52
|
|
gm OP-15
|
plwa3 M-94
|
potetaph M-172
|
table_vth OP-51
|
|
gmb OP-16
|
plwagidl M-120
|
potetar M-185
|
tdelay M-11
|
|
iavl OP-2
|
plwalp M-77
|
potetasat M-189
|
tempeff O-1
|
|
ids OP-1
|
plwbacc M-110
|
potetasr M-168
|
ther1 M-52
|
|
igb OP-5
|
plwbet M-35
|
potheph M-40
|
ther2 M-53
|
|
igd OP-4
|
plwbgidl M-124
|
pother M-48
|
tmin M-10
|
|
igs OP-3
|
plwbinv M-102
|
pothesat M-54
|
tnom M-222
|
|
keff OP-42
|
plwcgdo M-137
|
pothesr M-36
|
tox M-129
|
|
kov M-112
|
plwcgidl M-128
|
potheth M-58
|
tr M-17
|
|
kpinv M-27
|
plwcgso M-141
|
potnuexp M-181
|
tref M-223
|
|
l I-2
|
plwcox M-133
|
potphib M-160
|
trise I-8
|
|
lap M-14
|
plwcs M-205
|
potvfb M-156
|
type M-219
|
|
leff OP-37
|
plwetamob M-47
|
printscaled I-7
|
u OP-39
|
|
level M-1
|
plwigacc M-106
|
pwa1 M-85
|
vballmsg M-9
|
|
lmax M-19
|
plwiginv M-98
|
pwa2 M-89
|
vbdbhigh M-6
|
|
lmin M-18
|
plwigov M-116
|
pwa3 M-93
|
vbdblow M-5
|
|
lvar M-13
|
plwko M-26
|
pwagidl M-119
|
vbds M-4
|
|
m I-10
|
plwmexp M-82
|
pwalp M-76
|
vbox M-3
|
|
mbeo M-220
|
plwmo M-69
|
pwbacc M-109
|
vbsbhigh M-8
|
|
meff O-2
|
plwnfa M-147
|
pwbet M-34
|
vbsblow M-7
|
|
mos_region OP-59
|
plwnfb M-151
|
pwbgidl M-123
|
vds OP-6
|
|
mult I-1
|
plwnfc M-155
|
pwbinv M-101
|
vdss OP-13
|
|
mvto M-221
|
plwphib M-31
|
pwcgdo M-136
|
vearly OP-41
|
|
nf I-4
|
plwsdibl M-65
|
pwcgidl M-127
|
vfb M-22
|
|
ngcon I-5
|
plwssf M-73
|
pwcgso M-140
|
vfbov M-111
|
|
nt M-143
|
plwta1 M-196
|
pwcox M-132
|
vgs OP-7
|
|
nu M-180
|
plwtbgidl M-200
|
pwcs M-204
|
vgt OP-12
|
|
paramchk M-2
|
plwtetabet M-167
|
pwetamob M-46
|
von OP-57
|
|
pla1 M-84
|
plwtetacs M-209
|
pwigacc M-105
|
vp M-78
|
|
pla2 M-88
|
plwtetamob M-179
|
pwiginv M-97
|
vsat OP-14
|
|
pla3 M-92
|
plwtetaph M-175
|
pwigov M-115
|
vsb OP-8
|
|
plagidl M-118
|
plwtetar M-188
|
pwko M-25
|
vth OP-11
|
|
plalp M-75
|
plwtetasat M-192
|
pwmexp M-81
|
vto OP-9
|
|
plbacc M-108
|
plwtetasr M-171
|
pwmo M-68
|
vts OP-10
|
|
plbet M-33
|
plwtheph M-43
|
pwnfa M-146
|
w I-3
|
|
plbgidl M-122
|
plwther M-51
|
pwnfb M-150
|
weff OP-36
|
|
plbinv M-100
|
plwthesat M-57
|
pwnfc M-154
|
wmax M-21
|
|
plcgdo M-135
|
plwthesr M-39
|
pwphib M-30
|
wmin M-20
|
|
plcgidl M-126
|
plwtheth M-61
|
pwr OP-58
|
wot M-16
|
|
plcgso M-139
|
plwtnuexp M-184
|
pwsdibl M-64
|
wvar M-15
|
|
plcox M-131
|
plwtphib M-163
|
pwssf M-72
|
xgw I-6
|
MOS Model 11, Level 1102 (mos1102e)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos1102e parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
tr=21 C
|
Reference temperature.
|
|
7
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
8
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
9
|
ko=0.5 V
|
Body-effect factor.
|
|
10
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
11
|
phib=0.95 V
|
Surface potential at the onset of strong inversion.
|
|
12
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
13
|
bet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Gain factor.
|
|
14
|
etabet=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
15
|
thesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Mobility degradation parameter due to surface roughness scattering.
|
|
16
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
17
|
theph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Mobility degradation parameter due to phonon scattering.
|
|
18
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
19
|
etamob=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion charge.
|
|
20
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
21
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
22
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
23
|
ther=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of series resistance.
|
|
24
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
25
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
26
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
27
|
thesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
28
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
29
|
theth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
30
|
sdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
31
|
mo=0
|
Parameter for (short-channel) subthreshold slope.
|
|
32
|
ssf=0.012(n)/0.01(p) 1/V
|
|
|
|
Static-feedback parameter.
|
|
33
|
alp=0.025
|
Factor of channel length modulation.
|
|
34
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
35
|
mexp=5
|
Smoothing factor.
|
|
36
|
a1=6.02(n)/6.86(p)
|
|
|
|
|
Factor of the weak-avalanche current.
|
|
37
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
38
|
a2=38(n)/57.3(p) V
|
|
|
|
|
Exponent of the weak-avalanche current.
|
|
39
|
a3=0.641(n)/0.425(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
40
|
iginv=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
41
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
42
|
igacc=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
43
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
44
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
45
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
46
|
igov=0 A/V2
|
Gain factor for Source/Drain overlap tunneling current.
|
|
47
|
agidl=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
48
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
49
|
stbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
50
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
51
|
cox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
52
|
cgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
53
|
cgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
54
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
55
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
56
|
nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
57
|
nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise.
|
|
58
|
nfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
59
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
60
|
dta=0 K
|
Temperature offset of the device.
|
|
61
|
cs=0
|
Coefficient of Coulomb scattering.
|
|
62
|
etacs=0
|
Exponent of the temperature dependence of CS.
|
|
63
|
rg=0 Ω
|
Gate resistance.
|
|
64
|
scalelev=1.1e+04
|
Flag for eldo model.
|
|
65
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
66
|
imax=1000 A
|
Explosion current.
|
|
67
|
mbe=0.0
|
DCmatch parameter.
|
|
68
|
mvt=0.0
|
Threshold mismatch intercept.
|
|
69
|
tnom (C)
|
alias of tnom.
|
|
70
|
tref (C)
|
Alias of tnom.
|
|
71
|
simkitver=3.4
|
|
|
72
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
rg (Ω)
|
Gate resistance.
|
|
37
|
u
|
Transistor gain (gm/gds).
|
|
38
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
39
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
40
|
keff (V )
|
Body effect parameter.
|
|
41
|
beff (A/V2)
|
Gain factor.
|
|
42
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
43
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
44
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
45
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
46
|
table_ids (A)
|
Current.
|
|
47
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
48
|
table_qg (Coul)
|
Charge at g node.
|
|
49
|
table_qd (Coul)
|
Charge at d node.
|
|
50
|
table_qb (Coul)
|
Charge at b node.
|
|
51
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
52
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
53
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
|
54
|
diode_region=ON
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
a1 M-43
|
diode_region OP-54
|
mvt M-74
|
ther2 M-33
|
|
a2 M-45
|
dta M-67
|
nfa M-63
|
thesat M-34
|
|
a3 M-46
|
etabet M-21
|
nfb M-64
|
thesr M-22
|
|
agidl M-54
|
etacs M-69
|
nfc M-65
|
theth M-36
|
|
alp M-40
|
etamob M-26
|
nt M-62
|
tmin M-10
|
|
bacc M-50
|
etaph M-25
|
nu M-28
|
tnom M-75
|
|
beff OP-41
|
etar M-31
|
nuexp M-29
|
tox M-66
|
|
bet M-20
|
etasat M-35
|
paramchk M-2
|
tr M-13
|
|
bgidl M-55
|
etasr M-23
|
phib M-18
|
tref M-76
|
|
binv M-48
|
fknee OP-45
|
printscaled I-2
|
trise I-3
|
|
cbb OP-33
|
fug OP-42
|
region I-4
|
type M-72
|
|
cbd OP-30
|
gatenoise M-61
|
rg M-70
|
u OP-37
|
|
cbg OP-31
|
gds OP-17
|
rg OP-36
|
vballmsg M-9
|
|
cbs OP-32
|
gm OP-15
|
rout OP-38
|
vbdbhigh M-6
|
|
cdb OP-21
|
gmb OP-16
|
scalelev M-71
|
vbdblow M-5
|
|
cdd OP-18
|
iavl OP-2
|
sdibl M-37
|
vbds M-4
|
|
cdg OP-19
|
ids OP-1
|
sqrtsff OP-44
|
vbox M-3
|
|
cds OP-20
|
igacc M-49
|
sqrtsfw OP-43
|
vbsbhigh M-8
|
|
cgb OP-25
|
igb OP-5
|
ssf M-39
|
vbsblow M-7
|
|
cgd OP-22
|
igd OP-4
|
sta1 M-44
|
vds OP-6
|
|
cgdo M-59
|
iginv M-47
|
stbgidl M-56
|
vdss OP-13
|
|
cgdol OP-34
|
igov M-53
|
stetamob M-27
|
vearly OP-39
|
|
cgg OP-23
|
igs OP-3
|
stop M-12
|
vfb M-14
|
|
cgidl M-57
|
keff OP-40
|
stphib M-19
|
vfbov M-51
|
|
cgs OP-24
|
ko M-16
|
stvfb M-15
|
vgs OP-7
|
|
cgso M-60
|
kov M-52
|
table_ids OP-46
|
vgt OP-12
|
|
cgsol OP-35
|
kpinv M-17
|
table_qb OP-50
|
von OP-52
|
|
compatible M-77
|
level M-1
|
table_qd OP-49
|
vp M-41
|
|
cox M-58
|
m I-5
|
table_qg OP-48
|
vsat OP-14
|
|
cs M-68
|
mbe M-73
|
table_vth OP-47
|
vsb OP-8
|
|
csb OP-29
|
meff O-2
|
tdelay M-11
|
vth OP-11
|
|
csd OP-26
|
mexp M-42
|
tempeff O-1
|
vto OP-9
|
|
csg OP-27
|
mo M-38
|
theph M-24
|
vts OP-10
|
|
css OP-28
|
mos_region OP-53
|
ther M-30
|
|
|
ctype OP-51
|
mult I-1
|
ther1 M-32
|
|
MOS Model 11, Level 1102 (mos1102et)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos1102et parameter=value ...
Model Parameters
|
1
|
level=1.1e+03
|
Transistor Level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
tr=21 C
|
Reference temperature.
|
|
7
|
vfb=-1.05 V
|
Flat-band voltage at reference temperature.
|
|
8
|
stvfb=0.0005 V/K
|
Coefficient of temperature dependence of VFB.
|
|
9
|
ko=0.5 V
|
Body-effect factor.
|
|
10
|
kpinv=0 1/V
|
Inverse of body-effect factor of the poly-silicon gate.
|
|
11
|
phib=0.95 V
|
Surface potential at the onset of strong inversion.
|
|
12
|
stphib=-0.00085 V/K
|
|
|
|
|
Coefficient of the temperature dependency of PHIB.
|
|
13
|
bet=0.00192(n)/0.000381(p) A/V2
|
|
|
|
Gain factor.
|
|
14
|
etabet=1.3(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of the gain factor.
|
|
15
|
thesr=0.356(n)/0.73(p) 1/V
|
|
|
|
Mobility degradation parameter due to surface roughness scattering.
|
|
16
|
etasr=0.65(n)/0.5(p)
|
|
|
|
|
Exponent of the temperature dependence of THESR.
|
|
17
|
theph=0.0129(n)/0.001(p) 1/V
|
|
|
|
Mobility degradation parameter due to phonon scattering.
|
|
18
|
etaph=1.35(n)/3.75(p)
|
|
|
|
Exponent of the temperature dependence of THEPH.
|
|
19
|
etamob=1.4(n)/3(p)
|
|
|
|
|
Effective field parameter for dependence on depletion charge.
|
|
20
|
stetamob=0 1/K
|
Coefficient of the temperature dependence of ETAMOB.
|
|
21
|
nu=2
|
Exponent of field dependence of mobility model.
|
|
22
|
nuexp=5.25(n)/3.23(p)
|
|
|
|
Exponent of the temperature dependence of parameter NU.
|
|
23
|
ther=0.0812(n)/0.079(p) 1/V
|
|
|
|
Coefficient of series resistance.
|
|
24
|
etar=0.95(n)/0.4(p)
|
|
|
|
|
Exponent of the temperature dependence of THER.
|
|
25
|
ther1=0 V
|
Numerator of gate voltage dependent part of series resistance.
|
|
26
|
ther2=1 V
|
Denominator of gate voltage dependent part of series resistance.
|
|
27
|
thesat=0.251(n)/0.173(p) 1/V
|
|
|
|
Velocity saturation parameter due to optical/acoustic phonon scattering.
|
|
28
|
etasat=1.04(n)/0.86(p)
|
|
|
|
Exponent of the temperature dependence of THESAT.
|
|
29
|
theth=1e-05(n)/0(p) 1/V3
|
|
|
|
Coefficient of self-heating.
|
|
30
|
sdibl=0.000853(n)/3.55e-05(p) 1/V
|
|
|
|
Drain-induced barrier lowering parameter.
|
|
31
|
mo=0
|
Parameter for (short-channel) subthreshold slope.
|
|
32
|
ssf=0.012(n)/0.01(p) 1/V
|
|
|
|
Static-feedback parameter.
|
|
33
|
alp=0.025
|
Factor of channel length modulation.
|
|
34
|
vp=0.05 V
|
Characteristic voltage of channel-length modulation.
|
|
35
|
mexp=5
|
Smoothing factor.
|
|
36
|
a1=6.02(n)/6.86(p)
|
|
|
|
|
Factor of the weak-avalanche current.
|
|
37
|
sta1=0 1/K
|
Coefficient of the temperature dependence of A1.
|
|
38
|
a2=38(n)/57.3(p) V
|
|
|
|
|
Exponent of the weak-avalanche current.
|
|
39
|
a3=0.641(n)/0.425(p)
|
|
|
|
|
Factor of the drain-source voltage above which weak-avalanche occurs.
|
|
40
|
iginv=0 A/V2
|
Gain factor for intrinsic gate tunneling current in inversion.
|
|
41
|
binv=48(n)/87.5(p) V
|
|
|
|
|
Probability factor for intrinsic gate tunneling current in inversion.
|
|
42
|
igacc=0 A/V2
|
Gain factor for intrinsic gate tunneling current in accumulation.
|
|
43
|
bacc=48 V
|
Probability factor for intrinsic gate tunneling current in accumulation.
|
|
44
|
vfbov=0 V
|
Flat-band voltage for the Source/Drain overlap extensions.
|
|
45
|
kov=2.5 V
|
Body-effect factor for the Source/Drain overlap extensions.
|
|
46
|
igov=0 A/V2
|
Gain factor for Source/Drain overlap tunneling current.
|
|
47
|
agidl=0 A/V3
|
Gain factor for gate-induced leakage current.
|
|
48
|
bgidl=41 V
|
Probability factor for gate-induced drain leakage current at reference temperature.
|
|
49
|
stbgidl=-0.000364 V/K
|
|
|
|
Coefficient of the temperature dependence of BGIDL.
|
|
50
|
cgidl=0
|
Factor for the lateral field dependence of the gate-induced leakage current.
|
|
51
|
cox=2.98e-14(n)/2.72e-14(p) F
|
|
|
|
Oxide capacitance for the intrinsic channel (* mult).
|
|
52
|
cgdo=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-drain overlap (* mult).
|
|
53
|
cgso=6.39e-15(n)/6.36e-15(p) F
|
|
|
|
Oxide capacitance for the gate-source overlap (* mult).
|
|
54
|
gatenoise=0
|
Flag for in/exclusion of induced gate thermal noise.
|
|
55
|
nt=1.62e-20 J
|
Thermal noise coefficient.
|
|
56
|
nfa=8.32e+22(n)/1.9e+22(p) 1/(Vm4)
|
|
|
|
First coefficient of the flicker noise.
|
|
57
|
nfb=2.51e+07(n)/5.04e+06(p) 1/(Vm2)
|
|
|
|
Second coefficient of the flicker noise.
|
|
58
|
nfc=0(n)/3.63e-10(p) 1/V
|
|
|
|
Third coefficient of the flicker noise.
|
|
59
|
tox=3.2e-09 m
|
Thickness of gate oxide layer.
|
|
60
|
dta=0 K
|
Temperature offset of the device.
|
|
61
|
cs=0
|
Coefficient of Coulomb scattering.
|
|
62
|
etacs=0
|
Exponent of the temperature dependence of CS.
|
|
63
|
rg=0 Ω
|
Gate resistance.
|
|
64
|
rth=300 K/W
|
Thermal resistance.
|
|
65
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
66
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
67
|
scalelev=1.1e+04
|
Flag for eldo model.
|
|
68
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
69
|
imax=1000 A
|
Explosion current.
|
|
70
|
mbe=0.0
|
DCmatch parameter.
|
|
71
|
mvt=0.0
|
Threshold mismatch intercept.
|
|
72
|
tnom (C)
|
Alias of tnom.
|
|
73
|
tref (C)
|
Alias of tnom.
|
|
74
|
simkitver=3.4
|
|
|
75
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
igs (A)
|
Gate-to-source current due to direct tunneling.
|
|
4
|
igd (A)
|
Gate-to-drain current due to direct tunneling.
|
|
5
|
igb (A)
|
Gate-to-bulk current due to direct tunneling.
|
|
6
|
vds (V)
|
Drain-source voltage.
|
|
7
|
vgs (V)
|
Gate-source voltage.
|
|
8
|
vsb (V)
|
Source-bulk voltage.
|
|
9
|
vto (V)
|
Zero-bias threshold voltage.
|
|
10
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
11
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
12
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
13
|
vdss (V)
|
Drain saturation voltage at actual bias.
|
|
14
|
vsat (V)
|
Saturation limit.
|
|
15
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
16
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
17
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
18
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
19
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
20
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
21
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
22
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
23
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
24
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
25
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
26
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
27
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
28
|
css (F)
|
Capacitance (d qs / d vs).
|
|
29
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
30
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
31
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
32
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
33
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
34
|
cgdol (F)
|
Gate-drain overlap capacitance of the actual transistor.
|
|
35
|
cgsol (F)
|
Gate-source overlap capacitance of the actual transistor.
|
|
36
|
rg (Ω)
|
Gate resistance.
|
|
37
|
u
|
Transistor gain (gm/gds).
|
|
38
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
39
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
40
|
keff (V )
|
Body effect parameter.
|
|
41
|
beff (A/V2)
|
Gain factor.
|
|
42
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
43
|
sqrtsfw (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
44
|
sqrtsff (V/Hz )
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
45
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
46
|
Pdiss (W)
|
Dissipation.
|
|
47
|
TK (K)
|
Actual device temperature.
|
|
48
|
table_ids (A)
|
Current.
|
|
49
|
table_vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
50
|
table_qg (Coul)
|
Charge at g node.
|
|
51
|
table_qd (Coul)
|
Charge at d node.
|
|
52
|
table_qb (Coul)
|
Charge at b node.
|
|
53
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
54
|
von (V)
|
Signed vth (<0 for PMOS, >0 for NMOS).
|
|
55
|
pwr (W)
|
Power.
|
|
56
|
mos_region
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth
|
|
57
|
diode_region
|
DIODE region. Possible values are off and on.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-46
|
css OP-28
|
mos_region OP-56
|
theph M-24
|
|
TK OP-47
|
cth M-72
|
mult I-1
|
ther M-30
|
|
a1 M-43
|
ctype OP-53
|
mvt M-77
|
ther1 M-32
|
|
a2 M-45
|
diode_region OP-57
|
nfa M-63
|
ther2 M-33
|
|
a3 M-46
|
dta M-67
|
nfb M-64
|
thesat M-34
|
|
agidl M-54
|
etabet M-21
|
nfc M-65
|
thesr M-22
|
|
alp M-40
|
etacs M-69
|
nt M-62
|
theth M-36
|
|
ath M-73
|
etamob M-26
|
nu M-28
|
tmin M-10
|
|
bacc M-50
|
etaph M-25
|
nuexp M-29
|
tnom M-78
|
|
beff OP-41
|
etar M-31
|
paramchk M-2
|
tox M-66
|
|
bet M-20
|
etasat M-35
|
phib M-18
|
tr M-13
|
|
bgidl M-55
|
etasr M-23
|
printscaled I-2
|
tref M-79
|
|
binv M-48
|
fknee OP-45
|
pwr OP-55
|
trise I-3
|
|
cbb OP-33
|
fug OP-42
|
region I-4
|
type M-75
|
|
cbd OP-30
|
gatenoise M-61
|
rg M-70
|
u OP-37
|
|
cbg OP-31
|
gds OP-17
|
rg OP-36
|
vballmsg M-9
|
|
cbs OP-32
|
gm OP-15
|
rout OP-38
|
vbdbhigh M-6
|
|
cdb OP-21
|
gmb OP-16
|
rth M-71
|
vbdblow M-5
|
|
cdd OP-18
|
iavl OP-2
|
scalelev M-74
|
vbds M-4
|
|
cdg OP-19
|
ids OP-1
|
sdibl M-37
|
vbox M-3
|
|
cds OP-20
|
igacc M-49
|
sqrtsff OP-44
|
vbsbhigh M-8
|
|
cgb OP-25
|
igb OP-5
|
sqrtsfw OP-43
|
vbsblow M-7
|
|
cgd OP-22
|
igd OP-4
|
ssf M-39
|
vds OP-6
|
|
cgdo M-59
|
iginv M-47
|
sta1 M-44
|
vdss OP-13
|
|
cgdol OP-34
|
igov M-53
|
stbgidl M-56
|
vearly OP-39
|
|
cgg OP-23
|
igs OP-3
|
stetamob M-27
|
vfb M-14
|
|
cgidl M-57
|
keff OP-40
|
stop M-12
|
vfbov M-51
|
|
cgs OP-24
|
ko M-16
|
stphib M-19
|
vgs OP-7
|
|
cgso M-60
|
kov M-52
|
stvfb M-15
|
vgt OP-12
|
|
cgsol OP-35
|
kpinv M-17
|
table_ids OP-48
|
von OP-54
|
|
compatible M-80
|
level M-1
|
table_qb OP-52
|
vp M-41
|
|
cox M-58
|
m I-5
|
table_qd OP-51
|
vsat OP-14
|
|
cs M-68
|
mbe M-76
|
table_qg OP-50
|
vsb OP-8
|
|
csb OP-29
|
meff O-2
|
table_vth OP-49
|
vth OP-11
|
|
csd OP-26
|
mexp M-42
|
tdelay M-11
|
vto OP-9
|
|
csg OP-27
|
mo M-38
|
tempeff O-1
|
vts OP-10
|
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
w=2e-05 m
|
Drawn width of the channel region.
|
|
2
|
wd=2e-05 m
|
Drawn width of the drift region.
|
|
3
|
mult=1
|
Number of devices in parallel.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
|
8
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2001 parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2001.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
wvar=0 m
|
Width offset of the channel region.
|
|
4
|
wdvar=0 m
|
Width offset of the drift region.
|
|
5
|
tref=25 deg. C
|
Reference temperature.
|
|
6
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
7
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
8
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
9
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
10
|
kor=1.6 V^1/2
|
Body factor of the channel region of an infinitely wide transistor.
|
|
11
|
swko=0
|
Width scaling coefficient for KO.
|
|
12
|
kodr=1 V^1/2
|
Body factor of the drift region of an infinitely wide transistor.
|
|
13
|
swkod=0
|
Width scaling coefficient for the body factor of the drift region.
|
|
14
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
15
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
16
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
17
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
18
|
betw=7e-05 A/V2
|
Gain factor of a channel region of 1 um wide, at reference temperature.
|
|
19
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
20
|
betaccw=7e-05 A/V-2
|
|
|
|
|
Gain factor of drift region of 1 um wide, at reference temperature.
|
|
21
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
22
|
rdw=4e+03 Ω
|
On-resistance of a drift region of 1 um wide, at reference temperature.
|
|
23
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
24
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
25
|
the1r=0.09 V^-1
|
Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
|
|
26
|
swthe1=0
|
Width scaling coefficient for THE1.
|
|
27
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
28
|
the2r=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
|
|
29
|
swthe2=0
|
Width scaling coefficient for THE2.
|
|
30
|
the3r=0.4 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
31
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
32
|
swthe3=0
|
Width scaling coefficient for THE3.
|
|
33
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
34
|
alp=0.002
|
Factor for channel length modulation.
|
|
35
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
36
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
37
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
38
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
39
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
40
|
a1r=15
|
Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
41
|
sta1=0 K^-1
|
Temperature scaling coefficient for A1.
|
|
42
|
swa1=0
|
Width scaling coefficient for A1.
|
|
43
|
a2=73 V
|
Exponent of weak avalanche current.
|
|
44
|
a3=0.8
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
45
|
coxw=7.5e-16 F
|
Oxide capacitance for an intrinsic channel region of 1um wide.
|
|
46
|
coxdw=7.5e-16 F
|
Oxide capacitance for an intrinsic drift region of 1um wide.
|
|
47
|
cgdow=0 F
|
Gate-to-drain overlap capacitance for a drift region of 1 um wide.
|
|
48
|
cgsow=0 F
|
Gate-to-source overlap capacitance for a channel region of 1 um wide.
|
|
49
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
50
|
nfaw=1.4e+25 V^-1 m^-4
|
|
|
|
First coefficient of flicker noise for a channel region of 1 um wide.
|
|
51
|
nfbw=2e+08 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise for a channel region of 1 um wide.
|
|
52
|
nfcw=0 V^-1
|
Third coefficient of flicker noise for a channel region of 1 um wide.
|
|
53
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
54
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
55
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
56
|
imax=1000 A
|
Explosion current.
|
|
57
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
58
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
59
|
tnom (deg. C)
|
Alias of tnom.
|
|
60
|
tr (deg. C)
|
Alias of tnom.
|
|
61
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
alp
|
Factor for channel length modulation.
|
|
17
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
18
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
19
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
20
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
21
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
22
|
a1
|
Factor of weak avalanche current, at reference temperature.
|
|
23
|
a2 (V)
|
Exponent of weak avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
25
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
26
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
27
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
28
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
29
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
30
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
31
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
32
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
33
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
34
|
int_s
|
|
|
35
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Internal drain saturation voltage at actual bias.
|
|
13
|
vdssat (V)
|
Drain-source saturation voltage at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
weff (m)
|
Effective channel width for geometrical models.
|
|
34
|
wdeff (m)
|
Effective drift region width for geometrical model.
|
|
35
|
u
|
Transistor gain (gm/gds).
|
|
36
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
37
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
38
|
beff (A/V2)
|
Gain factor.
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
40
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
41
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
42
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
43
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
44
|
mos_region=SUBTHRESHOLD
|
|
45
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1 O-22
|
diode_region OP-45
|
nfc O-32
|
the3r M-30
|
a1r M-40
|
dta M-54
|
nfcw M-52
|
tnom M-59
|
a2 M-43
|
etabet M-19
|
nt M-49
|
tox M-53
|
a2 O-23
|
etabetacc M-21
|
nt O-29
|
tox O-33
|
a3 M-44
|
etard M-23
|
paramchk M-2
|
tr M-60
|
a3 O-24
|
etathe3 M-31
|
phib M-14
|
tref M-5
|
alp M-34
|
fknee OP-43
|
phib O-5
|
trise I-8
|
alp O-16
|
fug OP-39
|
phibd M-16
|
type M-55
|
beff OP-38
|
gds OP-16
|
phibd O-6
|
u OP-35
|
bet O-7
|
gm OP-14
|
rd O-9
|
vbds M-58
|
betacc O-8
|
gmb OP-15
|
rdw M-22
|
vbox M-57
|
betaccw M-20
|
gmmos OP-40
|
region I-4
|
vdiseff OP-11
|
betw M-18
|
iavl OP-2
|
rout OP-36
|
vdissat OP-12
|
cbb OP-32
|
ids OP-1
|
sdibl M-36
|
vds OP-3
|
cbd OP-29
|
imax M-56
|
sdibl O-18
|
vdssat OP-13
|
cbg OP-30
|
int_d O-35
|
simkitver M-61
|
vearly OP-37
|
cbs OP-31
|
int_s O-34
|
sqrtsff OP-42
|
vfb M-6
|
cdb OP-20
|
ko O-3
|
sqrtsfw OP-41
|
vfb O-1
|
cdd OP-17
|
kod O-4
|
ssf M-39
|
vfbd M-8
|
cdg OP-18
|
kodr M-12
|
ssf O-21
|
vfbd O-2
|
cds OP-19
|
kor M-10
|
sta1 M-41
|
vgs OP-4
|
cgb OP-24
|
lamd M-24
|
stphib M-15
|
vgt OP-9
|
cgd OP-21
|
lamd O-10
|
stphibd M-17
|
vp M-35
|
cgdo O-27
|
level M-1
|
stvfb M-7
|
vp O-17
|
cgdow M-47
|
m I-5
|
stvfbd M-9
|
vsb OP-5
|
cgg OP-22
|
mexp M-33
|
swa1 M-42
|
vth OP-8
|
cgs OP-23
|
mexp O-15
|
swko M-11
|
vto OP-6
|
cgso O-28
|
mo M-38
|
swkod M-13
|
vtod OP-10
|
cgsow M-48
|
mo O-20
|
swthe1 M-26
|
vts OP-7
|
cox O-25
|
mos_region I-6
|
swthe2 M-29
|
w I-1
|
coxd O-26
|
mos_region OP-44
|
swthe3 M-32
|
wd I-2
|
coxdw M-46
|
msdibl M-37
|
the1 O-11
|
wdeff OP-34
|
coxw M-45
|
msdibl O-19
|
the1acc M-27
|
wdvar M-4
|
csb OP-28
|
mult I-3
|
the1acc O-12
|
weff OP-33
|
csd OP-25
|
nfa O-30
|
the1r M-25
|
wvar M-3
|
csg OP-26
|
nfaw M-50
|
the2 O-13
|
|
css OP-27
|
nfb O-31
|
the2r M-28
|
|
diode_region I-7
|
nfbw M-51
|
the3 O-14
|
|
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001e)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
3
|
m=1
|
Alias of mult.
|
|
4
|
mos_region=SUBTHRESHOLD
|
|
5
|
diode_region=ON
|
|
|
6
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2001e parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2001.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
tref=25 deg. C
|
Reference temperature.
|
|
4
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
5
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
6
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
7
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
8
|
ko=1.6 V^1/2
|
Body factor of the channel region.
|
|
9
|
kod=1 V^1/2
|
Body factor of the drift region.
|
|
10
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
11
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
12
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
13
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
14
|
bet=0.0014 A/V2
|
Gain factor of the channel region, at reference temperature.
|
|
15
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
16
|
betacc=0.0014 A/V-2
|
|
|
|
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
17
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
18
|
rd=200 Ω
|
On-resistance of the drift region, at reference temperature.
|
|
19
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
20
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
21
|
the1=0.09 V^-1
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
22
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
23
|
the2=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
24
|
the3=0.4 V^-1
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
25
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
26
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
27
|
alp=0.002
|
Factor for channel length modulation.
|
|
28
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
29
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
30
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
31
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
32
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
33
|
a1=15
|
Factor of weak avalanche current, at reference temperature.
|
|
34
|
sta1=0 K^-1
|
Temperature scaling coefficient for A1.
|
|
35
|
a2=73 V
|
Exponent of weak avalanche current.
|
|
36
|
a3=0.8
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
37
|
cox=1.5e-14 F
|
Oxide capacitance for the intrinsic channel region.
|
|
38
|
coxd=1.5e-14 F
|
Oxide capacitance for the intrinsic drift region.
|
|
39
|
cgdo=0 F
|
Gate-to-drain overlap capacitance.
|
|
40
|
cgso=0 F
|
Gate-to-source overlap capacitance.
|
|
41
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
42
|
nfa=7e+23 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise.
|
|
43
|
nfb=1e+07 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise.
|
|
44
|
nfc=0 V^-1
|
Third coefficient of flicker noise.
|
|
45
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
46
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
47
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
48
|
imax=1000 A
|
Explosion current.
|
|
49
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
50
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
51
|
tnom (deg. C)
|
Alias of tnom.
|
|
52
|
tr (deg. C)
|
Alias of tnom.
|
|
53
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
alp
|
Factor for channel length modulation.
|
|
17
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
18
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
19
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
20
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
21
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
22
|
a1
|
Factor of weak avalanche current, at reference temperature.
|
|
23
|
a2 (V)
|
Exponent of weak avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
25
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
26
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
27
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
28
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
29
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
30
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
31
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
32
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
33
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
34
|
int_s
|
|
|
35
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Internal drain saturation voltage at actual bias.
|
|
13
|
vdssat (V)
|
Drain-source saturation voltage at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
u
|
Transistor gain (gm/gds).
|
|
34
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
35
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
36
|
beff (A/V2)
|
Gain factor.
|
|
37
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
38
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
39
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
40
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
41
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
42
|
mos_region=SUBTHRESHOLD
|
|
43
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1 M-33
|
csg OP-26
|
msdibl O-19
|
the2 M-23
|
a1 O-22
|
css OP-27
|
mult I-1
|
the2 O-13
|
a2 M-35
|
diode_region I-5
|
nfa M-42
|
the3 M-24
|
a2 O-23
|
diode_region OP-43
|
nfa O-30
|
the3 O-14
|
a3 M-36
|
dta M-46
|
nfb M-43
|
tnom M-51
|
a3 O-24
|
etabet M-15
|
nfb O-31
|
tox M-45
|
alp M-27
|
etabetacc M-17
|
nfc M-44
|
tox O-33
|
alp O-16
|
etard M-19
|
nfc O-32
|
tr M-52
|
beff OP-36
|
etathe3 M-25
|
nt M-41
|
tref M-3
|
bet M-14
|
fknee OP-41
|
nt O-29
|
trise I-6
|
bet O-7
|
fug OP-37
|
paramchk M-2
|
type M-47
|
betacc M-16
|
gds OP-16
|
phib M-10
|
u OP-33
|
betacc O-8
|
gm OP-14
|
phib O-5
|
vbds M-50
|
cbb OP-32
|
gmb OP-15
|
phibd M-12
|
vbox M-49
|
cbd OP-29
|
gmmos OP-38
|
phibd O-6
|
vdiseff OP-11
|
cbg OP-30
|
iavl OP-2
|
rd M-18
|
vdissat OP-12
|
cbs OP-31
|
ids OP-1
|
rd O-9
|
vds OP-3
|
cdb OP-20
|
imax M-48
|
region I-2
|
vdssat OP-13
|
cdd OP-17
|
int_d O-35
|
rout OP-34
|
vearly OP-35
|
cdg OP-18
|
int_s O-34
|
sdibl M-29
|
vfb M-4
|
cds OP-19
|
ko M-8
|
sdibl O-18
|
vfb O-1
|
cgb OP-24
|
ko O-3
|
simkitver M-53
|
vfbd M-6
|
cgd OP-21
|
kod M-9
|
sqrtsff OP-40
|
vfbd O-2
|
cgdo M-39
|
kod O-4
|
sqrtsfw OP-39
|
vgs OP-4
|
cgdo O-27
|
lamd M-20
|
ssf M-32
|
vgt OP-9
|
cgg OP-22
|
lamd O-10
|
ssf O-21
|
vp M-28
|
cgs OP-23
|
level M-1
|
sta1 M-34
|
vp O-17
|
cgso M-40
|
m I-3
|
stphib M-11
|
vsb OP-5
|
cgso O-28
|
mexp M-26
|
stphibd M-13
|
vth OP-8
|
cox M-37
|
mexp O-15
|
stvfb M-5
|
vto OP-6
|
cox O-25
|
mo M-31
|
stvfbd M-7
|
vtod OP-10
|
coxd M-38
|
mo O-20
|
the1 M-21
|
vts OP-7
|
coxd O-26
|
mos_region I-4
|
the1 O-11
|
|
csb OP-28
|
mos_region OP-42
|
the1acc M-22
|
|
csd OP-25
|
msdibl M-30
|
the1acc O-12
|
|
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001et)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
3
|
m=1
|
Alias of mult.
|
|
4
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2001et parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2001.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
tref=25 deg. C
|
Reference temperature.
|
|
4
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
5
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
6
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
7
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
8
|
ko=1.6 V^1/2
|
Body factor of the channel region.
|
|
9
|
kod=1 V^1/2
|
Body factor of the drift region.
|
|
10
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
11
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
12
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
13
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
14
|
bet=0.0014 A/V2
|
Gain factor of the channel region, at reference temperature.
|
|
15
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
16
|
betacc=0.0014 A/V-2
|
|
|
|
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
17
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
18
|
rd=200 Ω
|
On-resistance of the drift region, at reference temperature.
|
|
19
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
20
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
21
|
the1=0.09 V^-1
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
22
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
23
|
the2=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
24
|
the3=0.4 V^-1
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
25
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
26
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
27
|
alp=0.002
|
Factor for channel length modulation.
|
|
28
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
29
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
30
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
31
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
32
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
33
|
a1=15
|
Factor of weak avalanche current, at reference temperature.
|
|
34
|
sta1=0 K^-1
|
Temperature scaling coefficient for A1.
|
|
35
|
a2=73 V
|
Exponent of weak avalanche current.
|
|
36
|
a3=0.8
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
37
|
cox=1.5e-14 F
|
Oxide capacitance for the intrinsic channel region.
|
|
38
|
coxd=1.5e-14 F
|
Oxide capacitance for the intrinsic drift region.
|
|
39
|
cgdo=0 F
|
Gate-to-drain overlap capacitance.
|
|
40
|
cgso=0 F
|
Gate-to-source overlap capacitance.
|
|
41
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
42
|
nfa=7e+23 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise.
|
|
43
|
nfb=1e+07 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise.
|
|
44
|
nfc=0 V^-1
|
Third coefficient of flicker noise.
|
|
45
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
46
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
47
|
rth=300 K/W
|
Thermal resistance.
|
|
48
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
49
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
50
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
51
|
imax=1000 A
|
Explosion current.
|
|
52
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
53
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
54
|
tnom (deg. C)
|
Alias of tnom.
|
|
55
|
tr (deg. C)
|
Alias of tnom.
|
|
56
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
alp
|
Factor for channel length modulation.
|
|
17
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
18
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
19
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
20
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
21
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
22
|
a1
|
Factor of weak avalanche current, at reference temperature.
|
|
23
|
a2 (V)
|
Exponent of weak avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
25
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
26
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
27
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
28
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
29
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
30
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
31
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
32
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
33
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
34
|
rth (K/W)
|
Thermal resistance.
|
|
35
|
cth (J/K)
|
Thermal capacitance.
|
|
36
|
int_s
|
|
|
37
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Internal drain saturation voltage at actual bias.
|
|
13
|
vdssat (V)
|
Drain-source saturation voltage at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
u
|
Transistor gain (gm/gds).
|
|
34
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
35
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
36
|
beff (A/V2)
|
Gain factor.
|
|
37
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
38
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
39
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
40
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
41
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
42
|
Pdiss (W)
|
Dissipation.
|
|
43
|
TK (K)
|
Actual temperature.
|
|
44
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-42
|
coxd O-26
|
mult I-1
|
the1acc O-12
|
|
TK OP-43
|
csb OP-28
|
nfa M-42
|
the2 M-23
|
|
a1 M-33
|
csd OP-25
|
nfa O-30
|
the2 O-13
|
|
a1 O-22
|
csg OP-26
|
nfb M-43
|
the3 M-24
|
|
a2 M-35
|
css OP-27
|
nfb O-31
|
the3 O-14
|
|
a2 O-23
|
cth M-48
|
nfc M-44
|
tnom M-54
|
|
a3 M-36
|
cth O-35
|
nfc O-32
|
tox M-45
|
|
a3 O-24
|
dta M-46
|
nt M-41
|
tox O-33
|
|
alp M-27
|
etabet M-15
|
nt O-29
|
tr M-55
|
|
alp O-16
|
etabetacc M-17
|
paramchk M-2
|
tref M-3
|
|
ath M-49
|
etard M-19
|
phib M-10
|
trise I-4
|
|
beff OP-36
|
etathe3 M-25
|
phib O-5
|
type M-50
|
|
bet M-14
|
fknee OP-41
|
phibd M-12
|
u OP-33
|
|
bet O-7
|
fug OP-37
|
phibd O-6
|
vbds M-53
|
|
betacc M-16
|
gds OP-16
|
pwr OP-44
|
vbox M-52
|
|
betacc O-8
|
gm OP-14
|
rd M-18
|
vdiseff OP-11
|
|
cbb OP-32
|
gmb OP-15
|
rd O-9
|
vdissat OP-12
|
|
cbd OP-29
|
gmmos OP-38
|
region I-2
|
vds OP-3
|
|
cbg OP-30
|
iavl OP-2
|
rout OP-34
|
vdssat OP-13
|
|
cbs OP-31
|
ids OP-1
|
rth M-47
|
vearly OP-35
|
|
cdb OP-20
|
imax M-51
|
rth O-34
|
vfb M-4
|
|
cdd OP-17
|
ko M-8
|
sdibl M-29
|
vfb O-1
|
|
cdg OP-18
|
ko O-3
|
sdibl O-18
|
vfbd M-6
|
|
cds OP-19
|
kod M-9
|
sqrtsff OP-40
|
vfbd O-2
|
|
cgb OP-24
|
kod O-4
|
sqrtsfw OP-39
|
vgs OP-4
|
|
cgd OP-21
|
lamd M-20
|
ssf M-32
|
vgt OP-9
|
|
cgdo M-39
|
lamd O-10
|
ssf O-21
|
vp M-28
|
|
cgdo O-27
|
level M-1
|
sta1 M-34
|
vp O-17
|
|
cgg OP-22
|
m I-3
|
stphib M-11
|
vsb OP-5
|
|
cgs OP-23
|
mexp M-26
|
stphibd M-13
|
vth OP-8
|
|
cgso M-40
|
mexp O-15
|
stvfb M-5
|
vto OP-6
|
|
cgso O-28
|
mo M-31
|
stvfbd M-7
|
vtod OP-10
|
|
cox M-37
|
mo O-20
|
the1 M-21
|
vts OP-7
|
|
cox O-25
|
msdibl M-30
|
the1 O-11
|
|
|
coxd M-38
|
msdibl O-19
|
the1acc M-22
|
|
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001t)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
w=2e-05 m
|
Drawn width of the channel region.
|
|
2
|
wd=2e-05 m
|
Drawn width of the drift region.
|
|
3
|
mult=1
|
Number of devices in parallel.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
|
8
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2001t parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2001.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
wvar=0 m
|
Width offset of the channel region.
|
|
4
|
wdvar=0 m
|
Width offset of the drift region.
|
|
5
|
tref=25 deg. C
|
Reference temperature.
|
|
6
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
7
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
8
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
9
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
10
|
kor=1.6 V^1/2
|
Body factor of the channel region of an infinitely wide transistor.
|
|
11
|
swko=0
|
Width scaling coefficient for KO.
|
|
12
|
kodr=1 V^1/2
|
Body factor of the drift region of an infinitely wide transistor.
|
|
13
|
swkod=0
|
Width scaling coefficient for the body factor of the drift region.
|
|
14
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
15
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
16
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
17
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
18
|
betw=7e-05 A/V2
|
Gain factor of a channel region of 1 um wide, at reference temperature.
|
|
19
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
20
|
betaccw=7e-05 A/V-2
|
|
|
|
|
Gain factor of drift region of 1 um wide, at reference temperature.
|
|
21
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
22
|
rdw=4e+03 Ω
|
On-resistance of a drift region of 1 um wide, at reference temperature.
|
|
23
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
24
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
25
|
the1r=0.09 V^-1
|
Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
|
|
26
|
swthe1=0
|
Width scaling coefficient for THE1.
|
|
27
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
28
|
the2r=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
|
|
29
|
swthe2=0
|
Width scaling coefficient for THE2.
|
|
30
|
the3r=0.4 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
31
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
32
|
swthe3=0
|
Width scaling coefficient for THE3.
|
|
33
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
34
|
alp=0.002
|
Factor for channel length modulation.
|
|
35
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
36
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
37
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
38
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
39
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
40
|
a1r=15
|
Factor of weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
41
|
sta1=0 K^-1
|
Temperature scaling coefficient for A1.
|
|
42
|
swa1=0
|
Width scaling coefficient for A1.
|
|
43
|
a2=73 V
|
Exponent of weak avalanche current.
|
|
44
|
a3=0.8
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
45
|
coxw=7.5e-16 F
|
Oxide capacitance for an intrinsic channel region of 1um wide.
|
|
46
|
coxdw=7.5e-16 F
|
Oxide capacitance for an intrinsic drift region of 1um wide.
|
|
47
|
cgdow=0 F
|
Gate-to-drain overlap capacitance for a drift region of 1 um wide.
|
|
48
|
cgsow=0 F
|
Gate-to-source overlap capacitance for a channel region of 1 um wide.
|
|
49
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
50
|
nfaw=1.4e+25 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise for a channel region of 1 um wide.
|
|
51
|
nfbw=2e+08 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise for a channel region of 1 um wide.
|
|
52
|
nfcw=0 V^-1
|
Third coefficient of flicker noise for a channel region of 1 um wide.
|
|
53
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
54
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
55
|
rth=300 K/W
|
Thermal resistance.
|
|
56
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
57
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
58
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
59
|
imax=1000 A
|
Explosion current.
|
|
60
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
61
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
62
|
tnom (deg. C)
|
Alias of tnom.
|
|
63
|
tr (deg. C)
|
Alias of tnom.
|
|
64
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
alp
|
Factor for channel length modulation.
|
|
17
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
18
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
19
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
20
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
21
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
22
|
a1
|
Factor of weak avalanche current, at reference temperature.
|
|
23
|
a2 (V)
|
Exponent of weak avalanche current.
|
|
24
|
a3
|
Factor of the drain-source voltage above which weak avalanche occurs.
|
|
25
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
26
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
27
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
28
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
29
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
30
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
31
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
32
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
33
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
34
|
rth (K/W)
|
Thermal resistance.
|
|
35
|
cth (J/K)
|
Thermal capacitance.
|
|
36
|
int_s
|
|
|
37
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Internal drain saturation voltage at actual bias.
|
|
13
|
vdssat (V)
|
Drain-source saturation voltage at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
weff (m)
|
Effective channel width for geometrical models.
|
|
34
|
wdeff (m)
|
Effective drift region width for geometrical model.
|
|
35
|
u
|
Transistor gain (gm/gds).
|
|
36
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
37
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
38
|
beff (A/V2)
|
Gain factor.
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
40
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
41
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
42
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
43
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
44
|
Pdiss (W)
|
Dissipation.
|
|
45
|
TK (K)
|
Actual temperature.
|
|
46
|
mos_region=SUBTHRESHOLD
|
|
|
47
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
Pdiss OP-44
|
css OP-27
|
nfaw M-50
|
the1r M-25
|
TK OP-45
|
cth M-56
|
nfb O-31
|
the2 O-13
|
a1 O-22
|
cth O-35
|
nfbw M-51
|
the2r M-28
|
a1r M-40
|
diode_region I-7
|
nfc O-32
|
the3 O-14
|
a2 M-43
|
diode_region OP-47
|
nfcw M-52
|
the3r M-30
|
a2 O-23
|
dta M-54
|
nt M-49
|
tnom M-62
|
a3 M-44
|
etabet M-19
|
nt O-29
|
tox M-53
|
a3 O-24
|
etabetacc M-21
|
paramchk M-2
|
tox O-33
|
alp M-34
|
etard M-23
|
phib M-14
|
tr M-63
|
alp O-16
|
etathe3 M-31
|
phib O-5
|
tref M-5
|
ath M-57
|
fknee OP-43
|
phibd M-16
|
trise I-8
|
beff OP-38
|
fug OP-39
|
phibd O-6
|
type M-58
|
bet O-7
|
gds OP-16
|
rd O-9
|
u OP-35
|
betacc O-8
|
gm OP-14
|
rdw M-22
|
vbds M-61
|
betaccw M-20
|
gmb OP-15
|
region I-4
|
vbox M-60
|
betw M-18
|
gmmos OP-40
|
rout OP-36
|
vdiseff OP-11
|
cbb OP-32
|
iavl OP-2
|
rth M-55
|
vdissat OP-12
|
cbd OP-29
|
ids OP-1
|
rth O-34
|
vds OP-3
|
cbg OP-30
|
imax M-59
|
sdibl M-36
|
vdssat OP-13
|
cbs OP-31
|
int_d O-37
|
sdibl O-18
|
vearly OP-37
|
cdb OP-20
|
int_s O-36
|
simkitver M-64
|
vfb M-6
|
cdd OP-17
|
ko O-3
|
sqrtsff OP-42
|
vfb O-1
|
cdg OP-18
|
kod O-4
|
sqrtsfw OP-41
|
vfbd M-8
|
cds OP-19
|
kodr M-12
|
ssf M-39
|
vfbd O-2
|
cgb OP-24
|
kor M-10
|
ssf O-21
|
vgs OP-4
|
cgd OP-21
|
lamd M-24
|
sta1 M-41
|
vgt OP-9
|
cgdo O-27
|
lamd O-10
|
stphib M-15
|
vp M-35
|
cgdow M-47
|
level M-1
|
stphibd M-17
|
vp O-17
|
cgg OP-22
|
m I-5
|
stvfb M-7
|
vsb OP-5
|
cgs OP-23
|
mexp M-33
|
stvfbd M-9
|
vth OP-8
|
cgso O-28
|
mexp O-15
|
swa1 M-42
|
vto OP-6
|
cgsow M-48
|
mo M-38
|
swko M-11
|
vtod OP-10
|
cox O-25
|
mo O-20
|
swkod M-13
|
vts OP-7
|
coxd O-26
|
mos_region I-6
|
swthe1 M-26
|
w I-1
|
coxdw M-46
|
mos_region OP-46
|
swthe2 M-29
|
wd I-2
|
coxw M-45
|
msdibl M-37
|
swthe3 M-32
|
wdeff OP-34
|
csb OP-28
|
msdibl O-19
|
the1 O-11
|
wdvar M-4
|
csd OP-25
|
mult I-3
|
the1acc M-27
|
weff OP-33
|
csg OP-26
|
nfa O-30
|
the1acc O-12
|
wvar M-3
|
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
w=2e-05 m
|
Drawn width of the channel region.
|
|
3
|
wd=2e-05 m
|
Drawn width of the drift region.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
|
7
|
diode_region=ON
|
|
|
8
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2002 parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2002.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
wvar=0 m
|
Width offset of the channel region.
|
|
4
|
wdvar=0 m
|
Width offset of the drift region.
|
|
5
|
tref=25 deg. C
|
Reference temperature.
|
|
6
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
7
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
8
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
9
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
10
|
kor=1.6 V^1/2
|
Body factor of the channel region of an infinitely wide transistor.
|
|
11
|
swko=0
|
Width scaling coefficient for KO.
|
|
12
|
kodr=1 V^1/2
|
Body factor of the drift region of an infinitely wide transistor.
|
|
13
|
swkod=0
|
Width scaling coefficient for the body factor of the drift region.
|
|
14
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
15
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
16
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
17
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
18
|
betw=7e-05 A/V2
|
Gain factor of a channel region of 1 um wide, at reference temperature.
|
|
19
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
20
|
betaccw=7e-05 A/V-2
|
|
|
|
|
Gain factor of drift region of 1 um wide, at reference temperature.
|
|
21
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
22
|
rdw=4e+03 Ω
|
On-resistance of a drift region of 1 um wide, at reference temperature.
|
|
23
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
24
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
25
|
the1r=0.09 V^-1
|
Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
|
|
26
|
swthe1=0
|
Width scaling coefficient for THE1.
|
|
27
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
28
|
the2r=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
|
|
29
|
swthe2=0
|
Width scaling coefficient for THE2.
|
|
30
|
the3r=0.4 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
31
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
32
|
swthe3=0
|
Width scaling coefficient for THE3.
|
|
33
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
34
|
the3dr=0 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
35
|
etathe3d=1
|
Temperature scaling exponent for THE3D.
|
|
36
|
swthe3d=0
|
Width scaling coefficient for THE3D.
|
|
37
|
mexpd=2
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
38
|
alp=0.002
|
Factor for channel length modulation.
|
|
39
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
40
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
41
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
42
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
43
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
44
|
a1chr=15
|
Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
45
|
sta1ch=0 K^-1
|
Temperature scaling coefficient for A1CH.
|
|
46
|
swa1ch=0
|
Width scaling coefficient for A1CH.
|
|
47
|
a2ch=73 V
|
Exponent of channel weak avalanche current.
|
|
48
|
a3ch=0.8
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
49
|
a1drr=15
|
Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
50
|
sta1dr=0 K^-1
|
Temperature scaling coefficient for A1DR.
|
|
51
|
swa1dr=0
|
Width scaling coefficient for A1DR.
|
|
52
|
a2dr=73 V
|
Exponent of drift weak avalanche current.
|
|
53
|
a3dr=0.8
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
54
|
coxw=7.5e-16 F
|
Oxide capacitance for an intrinsic channel region of 1um wide.
|
|
55
|
coxdw=7.5e-16 F
|
Oxide capacitance for an intrinsic drift region of 1um wide.
|
|
56
|
cgdow=0 F
|
Gate-to-drain overlap capacitance for a drift region of 1 um wide.
|
|
57
|
cgsow=0 F
|
Gate-to-source overlap capacitance for a channel region of 1 um wide.
|
|
58
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
59
|
nfaw=1.4e+25 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise for a channel region of 1 um wide.
|
|
60
|
nfbw=2e+08 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise for a channel region of 1 um wide.
|
|
61
|
nfcw=0 V^-1
|
Third coefficient of flicker noise for a channel region of 1 um wide.
|
|
62
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
63
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
64
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
65
|
imax=1000 A
|
Explosion current.
|
|
66
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
67
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
68
|
tnom (deg. C)
|
Alias of tnom.
|
|
69
|
tr (deg. C)
|
Alias of tnom.
|
|
70
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
the3d (V^-1)
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
17
|
etathe3d
|
Temperature scaling exponent for THE3D.
|
|
18
|
mexpd
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
19
|
alp
|
Factor for channel length modulation.
|
|
20
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
21
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
22
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
23
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
24
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
25
|
a1ch
|
Factor of channel weak avalanche current, at reference temperature.
|
|
26
|
a2ch (V)
|
Exponent of channel weak avalanche current.
|
|
27
|
a3ch
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
28
|
a1dr
|
Factor of drift weak avalanche current, at reference temperature.
|
|
29
|
a2dr (V)
|
Exponent of drift weak avalanche current.
|
|
30
|
a3dr
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
31
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
32
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
33
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
34
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
35
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
36
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
37
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
38
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
39
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
40
|
int_s
|
|
|
41
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Saturation voltage of channel region at actual bias.
|
|
13
|
vddisat (V)
|
Saturation voltage of drift region at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
weff (m)
|
Effective channel width for geometrical models.
|
|
34
|
wdeff (m)
|
Effective drift region width for geometrical model.
|
|
35
|
u
|
Transistor gain (gm/gds).
|
|
36
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
37
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
38
|
beff (A/V2)
|
Gain factor.
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
40
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
41
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
42
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
43
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
44
|
mos_region=SUBTHRESHOLD
|
|
|
45
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1ch O-25
|
csg OP-26
|
nfa O-36
|
the1r M-25
|
a1chr M-44
|
css OP-27
|
nfaw M-59
|
the2 O-13
|
a1dr O-28
|
diode_region I-7
|
nfb O-37
|
the2r M-28
|
a1drr M-49
|
diode_region OP-45
|
nfbw M-60
|
the3 O-14
|
a2ch M-47
|
dta M-63
|
nfc O-38
|
the3d O-16
|
a2ch O-26
|
etabet M-19
|
nfcw M-61
|
the3dr M-34
|
a2dr M-52
|
etabetacc M-21
|
nt M-58
|
the3r M-30
|
a2dr O-29
|
etard M-23
|
nt O-35
|
tnom M-68
|
a3ch M-48
|
etathe3 M-31
|
paramchk M-2
|
tox M-62
|
a3ch O-27
|
etathe3d M-35
|
phib M-14
|
tox O-39
|
a3dr M-53
|
etathe3d O-17
|
phib O-5
|
tr M-69
|
a3dr O-30
|
fknee OP-43
|
phibd M-16
|
tref M-5
|
alp M-38
|
fug OP-39
|
phibd O-6
|
trise I-8
|
alp O-19
|
gds OP-16
|
rd O-9
|
type M-64
|
beff OP-38
|
gm OP-14
|
rdw M-22
|
u OP-35
|
bet O-7
|
gmb OP-15
|
region I-4
|
vbds M-67
|
betacc O-8
|
gmmos OP-40
|
rout OP-36
|
vbox M-66
|
betaccw M-20
|
iavl OP-2
|
sdibl M-40
|
vddisat OP-13
|
betw M-18
|
ids OP-1
|
sdibl O-21
|
vdiseff OP-11
|
cbb OP-32
|
imax M-65
|
simkitver M-70
|
vdissat OP-12
|
cbd OP-29
|
int_d O-41
|
sqrtsff OP-42
|
vds OP-3
|
cbg OP-30
|
int_s O-40
|
sqrtsfw OP-41
|
vearly OP-37
|
cbs OP-31
|
ko O-3
|
ssf M-43
|
vfb M-6
|
cdb OP-20
|
kod O-4
|
ssf O-24
|
vfb O-1
|
cdd OP-17
|
kodr M-12
|
sta1ch M-45
|
vfbd M-8
|
cdg OP-18
|
kor M-10
|
sta1dr M-50
|
vfbd O-2
|
cds OP-19
|
lamd M-24
|
stphib M-15
|
vgs OP-4
|
cgb OP-24
|
lamd O-10
|
stphibd M-17
|
vgt OP-9
|
cgd OP-21
|
level M-1
|
stvfb M-7
|
vp M-39
|
cgdo O-33
|
m I-5
|
stvfbd M-9
|
vp O-20
|
cgdow M-56
|
mexp M-33
|
swa1ch M-46
|
vsb OP-5
|
cgg OP-22
|
mexp O-15
|
swa1dr M-51
|
vth OP-8
|
cgs OP-23
|
mexpd M-37
|
swko M-11
|
vto OP-6
|
cgso O-34
|
mexpd O-18
|
swkod M-13
|
vtod OP-10
|
cgsow M-57
|
mo M-42
|
swthe1 M-26
|
vts OP-7
|
cox O-31
|
mo O-23
|
swthe2 M-29
|
w I-2
|
coxd O-32
|
mos_region I-6
|
swthe3 M-32
|
wd I-3
|
coxdw M-55
|
mos_region OP-44
|
swthe3d M-36
|
wdeff OP-34
|
coxw M-54
|
msdibl M-41
|
the1 O-11
|
wdvar M-4
|
csb OP-28
|
msdibl O-22
|
the1acc M-27
|
weff OP-33
|
csd OP-25
|
mult I-1
|
the1acc O-12
|
wvar M-3
|
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002e)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
3
|
m=1
|
Alias of mult.
|
|
4
|
mos_region=SUBTHRESHOLD
|
|
5
|
diode_region=ON
|
|
|
6
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2002e parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2002.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
tref=25 deg. C
|
Reference temperature.
|
|
4
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
5
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
6
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
7
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
8
|
ko=1.6 V^1/2
|
Body factor of the channel region.
|
|
9
|
kod=1 V^1/2
|
Body factor of the drift region.
|
|
10
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
11
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
12
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
13
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
14
|
bet=0.0014 A/V2
|
Gain factor of the channel region, at reference temperature.
|
|
15
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
16
|
betacc=0.0014 A/V-2
|
|
|
|
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
17
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
18
|
rd=200 Ω
|
On-resistance of the drift region, at reference temperature.
|
|
19
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
20
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
21
|
the1=0.09 V^-1
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
22
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
23
|
the2=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
24
|
the3=0.4 V^-1
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
25
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
26
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
27
|
the3d=0 V^-1
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
28
|
etathe3d=1
|
Temperature scaling exponent for THE3D.
|
|
29
|
mexpd=2
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
30
|
alp=0.002
|
Factor for channel length modulation.
|
|
31
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
32
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
33
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
34
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
35
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
36
|
a1ch=15
|
Factor of channel weak avalanche current, at reference temperature.
|
|
37
|
sta1ch=0 K^-1
|
Temperature scaling coefficient for A1CH.
|
|
38
|
a2ch=73 V
|
Exponent of channel weak avalanche current.
|
|
39
|
a3ch=0.8
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
40
|
a1dr=15
|
Factor of drift weak avalanche current, at reference temperature.
|
|
41
|
sta1dr=0 K^-1
|
Temperature scaling coefficient for A1DR.
|
|
42
|
a2dr=73 V
|
Exponent of drift weak avalanche current.
|
|
43
|
a3dr=0.8
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
44
|
cox=1.5e-14 F
|
Oxide capacitance for the intrinsic channel region.
|
|
45
|
coxd=1.5e-14 F
|
Oxide capacitance for the intrinsic drift region.
|
|
46
|
cgdo=0 F
|
Gate-to-drain overlap capacitance.
|
|
47
|
cgso=0 F
|
Gate-to-source overlap capacitance.
|
|
48
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
49
|
nfa=7e+23 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise.
|
|
50
|
nfb=1e+07 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise.
|
|
51
|
nfc=0 V^-1
|
Third coefficient of flicker noise.
|
|
52
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
53
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
54
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
55
|
imax=1000 A
|
Explosion current.
|
|
56
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
57
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
58
|
tnom (deg. C)
|
Alias of tnom.
|
|
59
|
tr (deg. C)
|
Alias of tnom.
|
|
60
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
the3d (V^-1)
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
17
|
etathe3d
|
Temperature scaling exponent for THE3D.
|
|
18
|
mexpd
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
19
|
alp
|
Factor for channel length modulation.
|
|
20
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
21
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
22
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
23
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
24
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
25
|
a1ch
|
Factor of channel weak avalanche current, at reference temperature.
|
|
26
|
a2ch (V)
|
Exponent of channel weak avalanche current.
|
|
27
|
a3ch
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
28
|
a1dr
|
Factor of drift weak avalanche current, at reference temperature.
|
|
29
|
a2dr (V)
|
Exponent of drift weak avalanche current.
|
|
30
|
a3dr
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
31
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
32
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
33
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
34
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
35
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
36
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
37
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
38
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
39
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
40
|
int_s
|
|
|
41
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Saturation voltage of channel region at actual bias.
|
|
13
|
vddisat (V)
|
Saturation voltage of drift region at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
u
|
Transistor gain (gm/gds).
|
|
34
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
35
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
36
|
beff (A/V2)
|
Gain factor.
|
|
37
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
38
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
39
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
40
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
41
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
42
|
mos_region=SUBTHRESHOLD
|
|
|
43
|
diode_region=ON
|
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
a1ch M-36
|
coxd O-32
|
mo O-23
|
the1acc M-22
|
a1ch O-25
|
csb OP-28
|
mos_region I-4
|
the1acc O-12
|
a1dr M-40
|
csd OP-25
|
mos_region OP-42
|
the2 M-23
|
a1dr O-28
|
csg OP-26
|
msdibl M-33
|
the2 O-13
|
a2ch M-38
|
css OP-27
|
msdibl O-22
|
the3 M-24
|
a2ch O-26
|
diode_region I-5
|
mult I-1
|
the3 O-14
|
a2dr M-42
|
diode_region OP-43
|
nfa M-49
|
the3d M-27
|
a2dr O-29
|
dta M-53
|
nfa O-36
|
the3d O-16
|
a3ch M-39
|
etabet M-15
|
nfb M-50
|
tnom M-58
|
a3ch O-27
|
etabetacc M-17
|
nfb O-37
|
tox M-52
|
a3dr M-43
|
etard M-19
|
nfc M-51
|
tox O-39
|
a3dr O-30
|
etathe3 M-25
|
nfc O-38
|
tr M-59
|
alp M-30
|
etathe3d M-28
|
nt M-48
|
tref M-3
|
alp O-19
|
etathe3d O-17
|
nt O-35
|
trise I-6
|
beff OP-36
|
fknee OP-41
|
paramchk M-2
|
type M-54
|
bet M-14
|
fug OP-37
|
phib M-10
|
u OP-33
|
bet O-7
|
gds OP-16
|
phib O-5
|
vbds M-57
|
betacc M-16
|
gm OP-14
|
phibd M-12
|
vbox M-56
|
betacc O-8
|
gmb OP-15
|
phibd O-6
|
vddisat OP-13
|
cbb OP-32
|
gmmos OP-38
|
rd M-18
|
vdiseff OP-11
|
cbd OP-29
|
iavl OP-2
|
rd O-9
|
vdissat OP-12
|
cbg OP-30
|
ids OP-1
|
region I-2
|
vds OP-3
|
cbs OP-31
|
imax M-55
|
rout OP-34
|
vearly OP-35
|
cdb OP-20
|
int_d O-41
|
sdibl M-32
|
vfb M-4
|
cdd OP-17
|
int_s O-40
|
sdibl O-21
|
vfb O-1
|
cdg OP-18
|
ko M-8
|
simkitver M-60
|
vfbd M-6
|
cds OP-19
|
ko O-3
|
sqrtsff OP-40
|
vfbd O-2
|
cgb OP-24
|
kod M-9
|
sqrtsfw OP-39
|
vgs OP-4
|
cgd OP-21
|
kod O-4
|
ssf M-35
|
vgt OP-9
|
cgdo M-46
|
lamd M-20
|
ssf O-24
|
vp M-31
|
cgdo O-33
|
lamd O-10
|
sta1ch M-37
|
vp O-20
|
cgg OP-22
|
level M-1
|
sta1dr M-41
|
vsb OP-5
|
cgs OP-23
|
m I-3
|
stphib M-11
|
vth OP-8
|
cgso M-47
|
mexp M-26
|
stphibd M-13
|
vto OP-6
|
cgso O-34
|
mexp O-15
|
stvfb M-5
|
vtod OP-10
|
cox M-44
|
mexpd M-29
|
stvfbd M-7
|
vts OP-7
|
cox O-31
|
mexpd O-18
|
the1 M-21
|
|
coxd M-45
|
mo M-34
|
the1 O-11
|
|
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002et)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
3
|
m=1
|
Alias of mult.
|
|
4
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2002et parameter=value ...
Model Parameters
|
1
|
evel=2e+03
|
Must be 2002.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
tref=25 deg. C
|
Reference temperature.
|
|
4
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
5
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
6
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
7
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
8
|
ko=1.6 V^1/2
|
Body factor of the channel region.
|
|
9
|
kod=1 V^1/2
|
Body factor of the drift region.
|
|
10
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
11
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
12
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
13
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
14
|
bet=0.0014 A/V2
|
Gain factor of the channel region, at reference temperature.
|
|
15
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
16
|
betacc=0.0014 A/V-2
|
|
|
|
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
17
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
18
|
rd=200 Ω
|
On-resistance of the drift region, at reference temperature.
|
|
19
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
20
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
21
|
the1=0.09 V^-1
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
22
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
23
|
the2=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
24
|
the3=0.4 V^-1
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
25
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
26
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
27
|
the3d=0 V^-1
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
28
|
etathe3d=1
|
Temperature scaling exponent for THE3D.
|
|
29
|
mexpd=2
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
30
|
alp=0.002
|
Factor for channel length modulation.
|
|
31
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
32
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
33
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
34
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
35
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
36
|
a1ch=15
|
Factor of channel weak avalanche current, at reference temperature.
|
|
37
|
sta1ch=0 K^-1
|
Temperature scaling coefficient for A1CH.
|
|
38
|
a2ch=73 V
|
Exponent of channel weak avalanche current.
|
|
39
|
a3ch=0.8
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
40
|
a1dr=15
|
Factor of drift weak avalanche current, at reference temperature.
|
|
41
|
sta1dr=0 K^-1
|
Temperature scaling coefficient for A1DR.
|
|
42
|
a2dr=73 V
|
Exponent of drift weak avalanche current.
|
|
43
|
a3dr=0.8
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
44
|
cox=1.5e-14 F
|
Oxide capacitance for the intrinsic channel region.
|
|
45
|
coxd=1.5e-14 F
|
Oxide capacitance for the intrinsic drift region.
|
|
46
|
cgdo=0 F
|
Gate-to-drain overlap capacitance.
|
|
47
|
cgso=0 F
|
Gate-to-source overlap capacitance.
|
|
48
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
49
|
nfa=7e+23 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise.
|
|
50
|
nfb=1e+07 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise.
|
|
51
|
nfc=0 V^-1
|
Third coefficient of flicker noise.
|
|
52
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
53
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
54
|
rth=300 K/W
|
Thermal resistance.
|
|
55
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
56
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
57
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
58
|
imax=1000 A
|
Explosion current.
|
|
59
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
60
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
61
|
tnom (deg. C)
|
Alias of tnom.
|
|
62
|
tr (deg. C)
|
Alias of tnom.
|
|
63
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
the3d (V^-1)
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
17
|
etathe3d
|
Temperature scaling exponent for THE3D.
|
|
18
|
mexpd
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
19
|
alp
|
Factor for channel length modulation.
|
|
20
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
21
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
22
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
23
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
24
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
25
|
a1ch
|
Factor of channel weak avalanche current, at reference temperature.
|
|
26
|
a2ch (V)
|
Exponent of channel weak avalanche current.
|
|
27
|
a3ch
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
28
|
a1dr
|
Factor of drift weak avalanche current, at reference temperature.
|
|
29
|
a2dr (V)
|
Exponent of drift weak avalanche current.
|
|
30
|
a3dr
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
31
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
32
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
33
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
34
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
35
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
36
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
37
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
38
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
39
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
40
|
rth (K/W)
|
Thermal resistance.
|
|
41
|
cth (J/K)
|
Thermal capacitance.
|
|
42
|
int_s
|
|
|
43
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Saturation voltage of channel region at actual bias.
|
|
13
|
vddisat (V)
|
Saturation voltage of drift region at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
u
|
Transistor gain (gm/gds).
|
|
34
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
35
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
36
|
beff (A/V2)
|
Gain factor.
|
|
37
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
38
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
39
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
40
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
41
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
42
|
Pdiss (W)
|
Dissipation.
|
|
43
|
TK (K)
|
Actual temperature.
|
|
44
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-42
|
cox M-44
|
mo M-34
|
the1 O-11
|
|
TK OP-43
|
cox O-31
|
mo O-23
|
the1acc M-22
|
|
a1ch M-36
|
coxd M-45
|
msdibl M-33
|
the1acc O-12
|
|
a1ch O-25
|
coxd O-32
|
msdibl O-22
|
the2 M-23
|
|
a1dr M-40
|
csb OP-28
|
mult I-1
|
the2 O-13
|
|
a1dr O-28
|
csd OP-25
|
nfa M-49
|
the3 M-24
|
|
a2ch M-38
|
csg OP-26
|
nfa O-36
|
the3 O-14
|
|
a2ch O-26
|
css OP-27
|
nfb M-50
|
the3d M-27
|
|
a2dr M-42
|
cth M-55
|
nfb O-37
|
the3d O-16
|
|
a2dr O-29
|
cth O-41
|
nfc M-51
|
tnom M-61
|
|
a3ch M-39
|
dta M-53
|
nfc O-38
|
tox M-52
|
|
a3ch O-27
|
etabet M-15
|
nt M-48
|
tox O-39
|
|
a3dr M-43
|
etabetacc M-17
|
nt O-35
|
tr M-62
|
|
a3dr O-30
|
etard M-19
|
paramchk M-2
|
tref M-3
|
|
alp M-30
|
etathe3 M-25
|
phib M-10
|
trise I-4
|
|
alp O-19
|
etathe3d M-28
|
phib O-5
|
type M-57
|
|
ath M-56
|
etathe3d O-17
|
phibd M-12
|
u OP-33
|
|
beff OP-36
|
fknee OP-41
|
phibd O-6
|
vbds M-60
|
|
bet M-14
|
fug OP-37
|
pwr OP-44
|
vbox M-59
|
|
bet O-7
|
gds OP-16
|
rd M-18
|
vddisat OP-13
|
|
betacc M-16
|
gm OP-14
|
rd O-9
|
vdiseff OP-11
|
|
betacc O-8
|
gmb OP-15
|
region I-2
|
vdissat OP-12
|
|
cbb OP-32
|
gmmos OP-38
|
rout OP-34
|
vds OP-3
|
|
cbd OP-29
|
iavl OP-2
|
rth M-54
|
vearly OP-35
|
|
cbg OP-30
|
ids OP-1
|
rth O-40
|
vfb M-4
|
|
cbs OP-31
|
imax M-58
|
sdibl M-32
|
vfb O-1
|
|
cdb OP-20
|
ko M-8
|
sdibl O-21
|
vfbd M-6
|
|
cdd OP-17
|
ko O-3
|
sqrtsff OP-40
|
vfbd O-2
|
|
cdg OP-18
|
kod M-9
|
sqrtsfw OP-39
|
vgs OP-4
|
|
cds OP-19
|
kod O-4
|
ssf M-35
|
vgt OP-9
|
|
cgb OP-24
|
lamd M-20
|
ssf O-24
|
vp M-31
|
|
cgd OP-21
|
lamd O-10
|
sta1ch M-37
|
vp O-20
|
|
cgdo M-46
|
level M-1
|
sta1dr M-41
|
vsb OP-5
|
|
cgdo O-33
|
m I-3
|
stphib M-11
|
vth OP-8
|
|
cgg OP-22
|
mexp M-26
|
stphibd M-13
|
vto OP-6
|
|
cgs OP-23
|
mexp O-15
|
stvfb M-5
|
vtod OP-10
|
|
cgso M-47
|
mexpd M-29
|
stvfbd M-7
|
vts OP-7
|
|
cgso O-34
|
mexpd O-18
|
the1 M-21
|
|
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002t)
This is SimKit 3.7.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
w=2e-05 m
|
Drawn width of the channel region.
|
|
3
|
wd=2e-05 m
|
Drawn width of the drift region.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
|
8
|
trise=0
|
Temperature rise from ambient.
|
Model Definition
model modelName mos2002t parameter=value ...
Model Parameters
|
1
|
level=2e+03
|
Must be 2002.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
wvar=0 m
|
Width offset of the channel region.
|
|
4
|
wdvar=0 m
|
Width offset of the drift region.
|
|
5
|
tref=25 deg. C
|
Reference temperature.
|
|
6
|
vfb=-1 V
|
Flatband voltage of the channel region, at reference temperature.
|
|
7
|
stvfb=0 V/K
|
Temperature scaling coefficient for VFB.
|
|
8
|
vfbd=-0.1 V
|
Flatband voltage of the drift region, at reference temperature.
|
|
9
|
stvfbd=0 V/K
|
Temperature scaling coefficient for the flatband voltage of the drift region.
|
|
10
|
kor=1.6 V^1/2
|
Body factor of the channel region of an infinitely wide transistor.
|
|
11
|
swko=0
|
Width scaling coefficient for KO.
|
|
12
|
kodr=1 V^1/2
|
Body factor of the drift region of an infinitely wide transistor.
|
|
13
|
swkod=0
|
Width scaling coefficient for the body factor of the drift region.
|
|
14
|
phib=0.86 V
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
15
|
stphib=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIB.
|
|
16
|
phibd=0.78 V
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
17
|
stphibd=-0.0012 V/K
|
|
|
|
|
Temperature scaling coefficient for PHIBD.
|
|
18
|
betw=7e-05 A/V2
|
Gain factor of a channel region of 1 um wide, at reference temperature.
|
|
19
|
etabet=1.6
|
Temperature scaling exponent for BET.
|
|
20
|
betaccw=7e-05 A/V-2
|
|
|
|
|
Gain factor of drift region of 1 um wide, at reference temperature.
|
|
21
|
etabetacc=1.5
|
Temperature scaling exponent for BETACC.
|
|
22
|
rdw=4e+03 Ω
|
On-resistance of a drift region of 1 um wide, at reference temperature.
|
|
23
|
etard=1.5
|
Temperature scaling exponent for RD.
|
|
24
|
lamd=0.2
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
25
|
the1r=0.09 V^-1
|
Mobility reduction coefficient of infinitely wide transistor, due to vertical strong-inversion field in a channel region.
|
|
26
|
swthe1=0
|
Width scaling coefficient for THE1.
|
|
27
|
the1acc=0.02 V^-1
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
28
|
the2r=0.03 V^(-1/2)
|
|
|
|
|
Mobility reduction coefficient for VSB > 0 of an infinitely wide transistor, due to vertical depletion field in channel region.
|
|
29
|
swthe2=0
|
Width scaling coefficient for THE2.
|
|
30
|
the3r=0.4 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
31
|
etathe3=1
|
Temperature scaling exponent for THE3.
|
|
32
|
swthe3=0
|
Width scaling coefficient for THE3.
|
|
33
|
mexp=2
|
Smoothing factor for transition from linear to saturation regime.
|
|
34
|
the3dr=0 V^-1
|
Mobility reduction coefficient in a channel region of an infinitely wide transistor due to velocity saturation.
|
|
35
|
etathe3d=1
|
Temperature scaling exponent for THE3D.
|
|
36
|
swthe3d=0
|
Width scaling coefficient for THE3D.
|
|
37
|
mexpd=2
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
38
|
alp=0.002
|
Factor for channel length modulation.
|
|
39
|
vp=0.05 V
|
Characteristic voltage of channel length modulation.
|
|
40
|
sdibl=0.001 V^(-1/2)
|
|
|
|
|
Factor for drain-induced barrier lowering.
|
|
41
|
msdibl=3
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
42
|
mo=0 V
|
Parameter for the (short-channel) sub-threshold slope.
|
|
43
|
ssf=1e-12 V^(-1/2)
|
|
|
|
|
Factor for static feedback.
|
|
44
|
a1chr=15
|
Factor of channel weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
45
|
sta1ch=0 K^-1
|
Temperature scaling coefficient for A1CH.
|
|
46
|
swa1ch=0
|
Width scaling coefficient for A1CH.
|
|
47
|
a2ch=73 V
|
Exponent of channel weak avalanche current.
|
|
48
|
a3ch=0.8
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
49
|
a1drr=15
|
Factor of drift weak avalanche current of an infinitely wide transistor, at reference temperature.
|
|
50
|
sta1dr=0 K^-1
|
Temperature scaling coefficient for A1DR.
|
|
51
|
swa1dr=0
|
Width scaling coefficient for A1DR.
|
|
52
|
a2dr=73 V
|
Exponent of drift weak avalanche current.
|
|
53
|
a3dr=0.8
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
54
|
coxw=7.5e-16 F
|
Oxide capacitance for an intrinsic channel region of 1um wide.
|
|
55
|
coxdw=7.5e-16 F
|
Oxide capacitance for an intrinsic drift region of 1um wide.
|
|
56
|
cgdow=0 F
|
Gate-to-drain overlap capacitance for a drift region of 1 um wide.
|
|
57
|
cgsow=0 F
|
Gate-to-source overlap capacitance for a channel region of 1 um wide.
|
|
58
|
nt=1.65e-20 J
|
Coefficient of thermal noise, at reference temperature.
|
|
59
|
nfaw=1.4e+25 V^-1 m^-4
|
|
|
|
|
First coefficient of flicker noise for a channel region of 1 um wide.
|
|
60
|
nfbw=2e+08 V^-1 m-2
|
|
|
|
|
Second coefficient of flicker noise for a channel region of 1 um wide.
|
|
61
|
nfcw=0 V^-1
|
Third coefficient of flicker noise for a channel region of 1 um wide.
|
|
62
|
tox=3.8e-08 m
|
Thickness of the oxide above the channel region.
|
|
63
|
dta=0 K
|
Temperature offset to the ambient temperature.
|
|
64
|
rth=300 K/W
|
Thermal resistance.
|
|
65
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
66
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
67
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
68
|
imax=1000 A
|
Explosion current.
|
|
69
|
vbox=0.0 V
|
Oxide breakdown voltage.
|
|
70
|
vbds=0.0 V
|
Drain-source breakdown voltage.
|
|
71
|
tnom (deg. C)
|
Alias of tnom.
|
|
72
|
tr (deg. C)
|
Alias of tnom.
|
|
73
|
simkitver=3.4
|
|
Output Parameters
|
1
|
vfb (V)
|
Flatband voltage of the channel region, at reference temperature.
|
|
2
|
vfbd (V)
|
Flatband voltage of the drift region.
|
|
3
|
ko (V^1/2)
|
Body factor of the channel region.
|
|
4
|
kod (V^1/2)
|
Body factor of the drift region.
|
|
5
|
phib (V)
|
Surface potential at the onset of strong inversion in the channel region, at reference temperature.
|
|
6
|
phibd (V)
|
Surface potential at the onset of strong inversion in the drift region, at reference temperature.
|
|
7
|
bet (A/V2)
|
Gain factor of the channel region, at reference temperature.
|
|
8
|
betacc (A/V2)
|
Gain factor for accumulation in the drift region, at reference temperature.
|
|
9
|
rd (Ω)
|
On-resistance of the drift region, at reference temperature.
|
|
10
|
lamd
|
Quotient of the depletion layer thickness to the effective thickness of the drift region at VSB = 0 V.
|
|
11
|
the1 (V^-1)
|
Mobility reduction coefficient in the channel region due to vertical electrical field caused by strong inversion.
|
|
12
|
the1acc (V^-1)
|
Mobility reduction coefficient in the drift region due to the vertical electrical field caused by accumulation.
|
|
13
|
the2 (V^-1/2)
|
Mobility reduction coefficient for VSB > 0 in the channel region due to the vertical electrical field caused by depletion.
|
|
14
|
the3 (V^-1)
|
Mobility reduction coefficient in the channel region due to the horizontal electrical field caused by velocity saturation.
|
|
15
|
mexp
|
Smoothing factor for transition from linear to saturation regime.
|
|
16
|
the3d (V^-1)
|
Mobility reduction coefficient in the drift region due to the horizontal electrical field caused by velocity saturation.
|
|
17
|
etathe3d
|
Temperature scaling exponent for THE3D.
|
|
18
|
mexpd
|
Smoothing factor for transition from linear to quasi-saturation regime.
|
|
19
|
alp
|
Factor for channel length modulation.
|
|
20
|
vp (V)
|
Characteristic voltage of channel length modulation.
|
|
21
|
sdibl (V^-1/2)
|
Factor for drain-induced barrier lowering.
|
|
22
|
msdibl
|
Exponent for the drain-induced barrier lowering dependence on the backgate bias.
|
|
23
|
mo (V)
|
Parameter for the (short-channel) sub-threshold slope.
|
|
24
|
ssf (V^-1/2)
|
Factor for static feedback.
|
|
25
|
a1ch
|
Factor of channel weak avalanche current, at reference temperature.
|
|
26
|
a2ch (V)
|
Exponent of channel weak avalanche current.
|
|
27
|
a3ch
|
Factor of the drain-source voltage above which channel weak avalanche occurs.
|
|
28
|
a1dr
|
Factor of drift weak avalanche current, at reference temperature.
|
|
29
|
a2dr (V)
|
Exponent of drift weak avalanche current.
|
|
30
|
a3dr
|
Factor of the drain-source voltage above which drift weak avalanche occurs.
|
|
31
|
cox (F)
|
Oxide capacitance for the intrinsic channel region.
|
|
32
|
coxd (F)
|
Oxide capacitance for the intrinsic drift region.
|
|
33
|
cgdo (F)
|
Gate-to-drain overlap capacitance.
|
|
34
|
cgso (F)
|
Gate-to-source overlap capacitance.
|
|
35
|
nt (J)
|
Coefficient of thermal noise, at reference temperature.
|
|
36
|
nfa (V^-1 m^-4)
|
First coefficient of flicker noise.
|
|
37
|
nfb (V^-1 m-2)
|
Second coefficient of flicker noise.
|
|
38
|
nfc (V^-1)
|
Third coefficient of flicker noise.
|
|
39
|
tox (m)
|
Thickness of the oxide above the channel region.
|
|
40
|
rth (K/W)
|
Thermal resistance.
|
|
41
|
cth (J/K)
|
Thermal capacitance.
|
|
42
|
int_s
|
|
|
43
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain current, excluding avalanche and tunnel currents.
|
|
2
|
iavl (A)
|
Substrate current due to weak-avalanche.
|
|
3
|
vds (V)
|
Drain-source voltage.
|
|
4
|
vgs (V)
|
Gate-source voltage.
|
|
5
|
vsb (V)
|
Source-bulk voltage.
|
|
6
|
vto (V)
|
Zero-bias threshold voltage.
|
|
7
|
vts (V)
|
Threshold voltage including back-bias effects.
|
|
8
|
vth (V)
|
Threshold voltage including back-bias and drain-bias effects.
|
|
9
|
vgt (V)
|
Effective gate drive voltage including back-bias and drain voltage effects.
|
|
10
|
vtod (V)
|
Threshold voltage of the drift region.
|
|
11
|
vdiseff (V)
|
Effective internal drain-to-source voltage at actual bias.
|
|
12
|
vdissat (V)
|
Saturation voltage of channel region at actual bias.
|
|
13
|
vddisat (V)
|
Saturation voltage of drift region at actual bias.
|
|
14
|
gm (A/V)
|
Transconductance (d ids / d vgs).
|
|
15
|
gmb (A/V)
|
Substrate-transconductance (d ids / d vbs).
|
|
16
|
gds (A/V)
|
Output conductance (d ids / d vds).
|
|
17
|
cdd (F)
|
Capacitance (d qd / d vd).
|
|
18
|
cdg (F)
|
Capacitance (- d qd / d vg).
|
|
19
|
cds (F)
|
Capacitance (- d qd / d vs).
|
|
20
|
cdb (F)
|
Capacitance (- d qd / d vb).
|
|
21
|
cgd (F)
|
Capacitance (- d qg / d vd).
|
|
22
|
cgg (F)
|
Capacitance (d qg / d vg).
|
|
23
|
cgs (F)
|
Capacitance (- d qg / d vs).
|
|
24
|
cgb (F)
|
Capacitance (- d qg / d vb).
|
|
25
|
csd (F)
|
Capacitance (- d qs / d vd).
|
|
26
|
csg (F)
|
Capacitance (- d qs / d vg).
|
|
27
|
css (F)
|
Capacitance (d qs / d vs).
|
|
28
|
csb (F)
|
Capacitance (- d qs / d vb).
|
|
29
|
cbd (F)
|
Capacitance (- d qb / d vd).
|
|
30
|
cbg (F)
|
Capacitance (- d qb / d vg).
|
|
31
|
cbs (F)
|
Capacitance (- d qb / d vs).
|
|
32
|
cbb (F)
|
Capacitance (d qb / d vb).
|
|
33
|
weff (m)
|
Effective channel width for geometrical models.
|
|
34
|
wdeff (m)
|
Effective drift region width for geometrical model.
|
|
35
|
u
|
Transistor gain (gm/gds).
|
|
36
|
rout (Ω)
|
Small-signal output resistance (1/gds).
|
|
37
|
vearly (V)
|
Equivalent Early voltage (|id|/gds).
|
|
38
|
beff (A/V2)
|
Gain factor.
|
|
39
|
fug (Hz)
|
Unity gain frequency at actual bias (gm/(2*pi*cin)).
|
|
40
|
gmmos (A/V)
|
Transconductance of channel region.
|
|
41
|
sqrtsfw (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density.
|
|
42
|
sqrtsff (V/Hz^1/2)
|
|
|
|
|
Input-referred RMS white noise voltage density at 1 kHz.
|
|
43
|
fknee (Hz)
|
Cross-over frequency above which white noise is dominant.
|
|
44
|
Pdiss (W)
|
Dissipation.
|
|
45
|
TK (K)
|
Actual temperature.
|
|
46
|
pwr (W)
|
Power.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-44
|
csb OP-28
|
nfbw M-60
|
the2r M-28
|
|
TK OP-45
|
csd OP-25
|
nfc O-38
|
the3 O-14
|
|
a1ch O-25
|
csg OP-26
|
nfcw M-61
|
the3d O-16
|
|
a1chr M-44
|
css OP-27
|
nt M-58
|
the3dr M-34
|
|
a1dr O-28
|
cth M-65
|
nt O-35
|
the3r M-30
|
|
a1drr M-49
|
cth O-41
|
paramchk M-2
|
tnom M-71
|
|
a2ch M-47
|
dta M-63
|
phib M-14
|
tox M-62
|
|
a2ch O-26
|
etabet M-19
|
phib O-5
|
tox O-39
|
|
a2dr M-52
|
etabetacc M-21
|
phibd M-16
|
tr M-72
|
|
a2dr O-29
|
etard M-23
|
phibd O-6
|
tref M-5
|
|
a3ch M-48
|
etathe3 M-31
|
pwr OP-46
|
trise I-6
|
|
a3ch O-27
|
etathe3d M-35
|
rd O-9
|
type M-67
|
|
a3dr M-53
|
etathe3d O-17
|
rdw M-22
|
u OP-35
|
|
a3dr O-30
|
fknee OP-43
|
region I-4
|
vbds M-70
|
|
alp M-38
|
fug OP-39
|
rout OP-36
|
vbox M-69
|
|
alp O-19
|
gds OP-16
|
rth M-64
|
vddisat OP-13
|
|
ath M-66
|
gm OP-14
|
rth O-40
|
vdiseff OP-11
|
|
beff OP-38
|
gmb OP-15
|
sdibl M-40
|
vdissat OP-12
|
|
bet O-7
|
gmmos OP-40
|
sdibl O-21
|
vds OP-3
|
|
betacc O-8
|
iavl OP-2
|
sqrtsff OP-42
|
vearly OP-37
|
|
betaccw M-20
|
ids OP-1
|
sqrtsfw OP-41
|
vfb M-6
|
|
betw M-18
|
imax M-68
|
ssf M-43
|
vfb O-1
|
|
cbb OP-32
|
ko O-3
|
ssf O-24
|
vfbd M-8
|
|
cbd OP-29
|
kod O-4
|
sta1ch M-45
|
vfbd O-2
|
|
cbg OP-30
|
kodr M-12
|
sta1dr M-50
|
vgs OP-4
|
|
cbs OP-31
|
kor M-10
|
stphib M-15
|
vgt OP-9
|
|
cdb OP-20
|
lamd M-24
|
stphibd M-17
|
vp M-39
|
|
cdd OP-17
|
lamd O-10
|
stvfb M-7
|
vp O-20
|
|
cdg OP-18
|
level M-1
|
stvfbd M-9
|
vsb OP-5
|
|
cds OP-19
|
m I-5
|
swa1ch M-46
|
vth OP-8
|
|
cgb OP-24
|
mexp M-33
|
swa1dr M-51
|
vto OP-6
|
|
cgd OP-21
|
mexp O-15
|
swko M-11
|
vtod OP-10
|
|
cgdo O-33
|
mexpd M-37
|
swkod M-13
|
vts OP-7
|
|
cgdow M-56
|
mexpd O-18
|
swthe1 M-26
|
w I-2
|
|
cgg OP-22
|
mo M-42
|
swthe2 M-29
|
wd I-3
|
|
cgs OP-23
|
mo O-23
|
swthe3 M-32
|
wdeff OP-34
|
|
cgso O-34
|
msdibl M-41
|
swthe3d M-36
|
wdvar M-4
|
|
cgsow M-57
|
msdibl O-22
|
the1 O-11
|
weff OP-33
|
|
cox O-31
|
mult I-1
|
the1acc M-27
|
wvar M-3
|
|
coxd O-32
|
nfa O-36
|
the1acc O-12
|
|
|
coxdw M-55
|
nfaw M-59
|
the1r M-25
|
|
|
coxw M-54
|
nfb O-37
|
the2 O-13
|
|
MOS Model 31, Level 3100 (mos3100)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos3100 parameter=value ...
Model Parameters
|
1
|
level=3.1e+03
|
Transistor level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
ron=1 Ω
|
Ohmic resistance at zero bias.
|
|
7
|
rsat=1 Ω
|
Space charge resistance at zero bias.
|
|
8
|
vsat=10 V
|
Critical drain-source voltage for hot carriers.
|
|
9
|
psat=1
|
Velocity saturation coefficient.
|
|
10
|
vp=-1 V
|
Pinch off voltage at zero gate and substrate voltages.
|
|
11
|
tox=-1 m
|
Gate oxide thickness.
|
|
12
|
dch=1e+21 m-3
|
Doping level channel.
|
|
13
|
dsub=1e+21 m-3
|
Doping level substrate.
|
|
14
|
vsub=0.6 V
|
Substrate diffusion voltage.
|
|
15
|
vgap=1.2 V
|
Bandgap voltage channel.
|
|
16
|
cgate=0 F
|
Gate capacitance at zero bias.
|
|
17
|
csub=0 F
|
Substrate capacitance at zero bias.
|
|
18
|
tausc=0 s
|
Space charge transit time of the channel.
|
|
19
|
ach=0
|
Temperature coefficient resistivity of the channel.
|
|
20
|
achmod=0
|
Parameter to switch to extended temperature scaling.
|
|
21
|
achron=0
|
Temperature coefficient of ohmic resistance at zero bias.
|
|
22
|
achvsat=0
|
Temperature coefficient of critical drain-source voltage for hot carriers.
|
|
23
|
achrsat=0
|
Temperature coefficient of space charge resistance at zero bias.
|
|
24
|
tref=25 deg. C
|
Reference temperature.
|
|
25
|
dta=0 deg. C
|
Temperature offset of the device.
|
|
26
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
27
|
imax=1000 A
|
Explosion current.
|
|
28
|
tnom (deg. C)
|
Alias of tnom.
|
|
29
|
tr (deg. C)
|
Alias of tnom.
|
|
30
|
simkitver=3.4
|
|
|
31
|
compatible=spectre
|
Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain source current (including velocity saturation).
|
|
2
|
vds (V)
|
Drain source voltage.
|
|
3
|
vgs (V)
|
Gate source voltage.
|
|
4
|
vbs (V)
|
Bulk source voltage.
|
|
5
|
vp (V)
|
Channel pinch off voltage.
|
|
6
|
gm (A/V)
|
Transconductance (dIds/dVg).
|
|
7
|
gmb (A/V)
|
Bulk transconductance (dIds/dVb).
|
|
8
|
gds (A/V)
|
Output conductance (dIds/dVd).
|
|
9
|
qg (C)
|
Gate charge.
|
|
10
|
cgd (F)
|
Gate charge dependence on drain voltage (- dQg/dVd).
|
|
11
|
cgg (F)
|
Gate charge dependence on gate voltage (dQg/dVg).
|
|
12
|
cgs (F)
|
Gate charge dependence on source voltage (-dQg/dVs).
|
|
13
|
cgb (F)
|
Gate charge dependence on bulk voltage (-dQg/dVb).
|
|
14
|
qb (C)
|
Bulk charge.
|
|
15
|
cbd (F)
|
Bulk charge dependence on drain voltage (-dQb/dVd).
|
|
16
|
cbg (F)
|
Bulk charge dependence on gate voltage (-dQb/dVg).
|
|
17
|
cbs (F)
|
Bulk charge dependence on source voltage (-dQb/dVs).
|
|
18
|
cbb (F)
|
Bulk charge dependence on bulk voltage (dQb/dVb).
|
|
19
|
qd (C)
|
Drain charge.
|
|
20
|
cdd (F)
|
Drain charge dependence on drain voltage (dQd/dVd).
|
|
21
|
cdg (F)
|
Drain charge dependence on gate voltage (-dQd/dVg).
|
|
22
|
cds (F)
|
Drain charge dependence on source voltage (-dQd/dVs).
|
|
23
|
cdb (F)
|
Drain charge dependence on bulk voltage (-dQd/dVb).
|
|
24
|
qs (C)
|
Source charge.
|
|
25
|
csd (F)
|
Source charge dependence on drain voltage (-dQs/dVd).
|
|
26
|
csg (F)
|
Source charge dependence on gate voltage (-dQs/dVg).
|
|
27
|
css (F)
|
Source charge dependence on source voltage (dQs/dVs).
|
|
28
|
csb (F)
|
Source charge dependence on bulk voltage (-dQs/dVb).
|
|
29
|
u
|
Transistor gain (gm/gds).
|
|
30
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
31
|
vearly (V)
|
Equivalent early voltage (|Ids|/gds).
|
|
32
|
iohm (A)
|
Drain source current excluding velocity saturation.
|
|
33
|
ihc (A)
|
Critical current for velocity saturation.
|
|
34
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
35
|
mos_region=SUBTHRESHOLD
|
|
|
|
MOS region. Possible values are off, sat, triode, and subth.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
ach M-26
|
csd OP-25
|
printscaled I-2
|
type M-33
|
|
achmod M-27
|
csg OP-26
|
psat M-16
|
u OP-29
|
|
achron M-28
|
css OP-27
|
qb OP-14
|
vballmsg M-9
|
|
achrsat M-30
|
csub M-24
|
qd OP-19
|
vbdbhigh M-6
|
|
achvsat M-29
|
ctype OP-34
|
qg OP-9
|
vbdblow M-5
|
|
cbb OP-18
|
dch M-19
|
qs OP-24
|
vbds M-4
|
|
cbd OP-15
|
dsub M-20
|
region I-4
|
vbox M-3
|
|
cbg OP-16
|
dta M-32
|
ron M-13
|
vbs OP-4
|
|
cbs OP-17
|
gds OP-8
|
rout OP-30
|
vbsbhigh M-8
|
|
cdb OP-23
|
gm OP-6
|
rsat M-14
|
vbsblow M-7
|
|
cdd OP-20
|
gmb OP-7
|
stop M-12
|
vds OP-2
|
|
cdg OP-21
|
ids OP-1
|
tausc M-25
|
vearly OP-31
|
|
cds OP-22
|
ihc OP-33
|
tdelay M-11
|
vgap M-22
|
|
cgate M-23
|
iohm OP-32
|
tempeff O-1
|
vgs OP-3
|
|
cgb OP-13
|
level M-1
|
tmin M-10
|
vp M-17
|
|
cgd OP-10
|
m I-5
|
tnom M-34
|
vp OP-5
|
|
cgg OP-11
|
meff O-2
|
tox M-18
|
vsat M-15
|
|
cgs OP-12
|
mos_region OP-35
|
tr M-35
|
vsub M-21
|
|
compatible M-36
|
mult I-1
|
tref M-31
|
|
|
csb OP-28
|
paramchk M-2
|
trise I-3
|
|
MOS Model 31, Level 3100 (mos3100t)
This is SimKit 5.0.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Instance Definition
Name d g s b dt ModelName parameter=value ...
Instance Parameters
|
1
|
mult=1
|
Number of devices in parallel.
|
|
2
|
printscaled=0
|
Print scaled parameter info if value not equal to zero.
|
|
3
|
trise=0 K
|
Difference between the local ambient and global ambient temperature.
|
|
4
|
region=triode
|
Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
|
|
5
|
m=1
|
Alias of mult.
|
|
6
|
mos_region=SUBTHRESHOLD
|
|
7
|
diode_region=ON
|
|
Model Definition
model modelName mos3100t parameter=value ...
Model Parameters
|
1
|
level=3.1e+03
|
Transistor level.
|
|
2
|
paramchk=0
|
Level of clip warning info.
|
|
3
|
vbox=0 V
|
Oxide breakdown voltage.
|
|
4
|
vbds=0 V
|
Drain-source breakdown voltage.
|
|
5
|
tmin=0 s
|
Ovcheck tmin value.
|
|
6
|
ron=1 Ω
|
Ohmic resistance at zero bias.
|
|
7
|
rsat=1 Ω
|
Space charge resistance at zero bias.
|
|
8
|
vsat=10 V
|
Critical drain-source voltage for hot carriers.
|
|
9
|
psat=1
|
Velocity saturation coefficient.
|
|
10
|
vp=-1 V
|
Pinch off voltage at zero gate and substrate voltages.
|
|
11
|
tox=-1 m
|
Gate oxide thickness.
|
|
12
|
dch=1e+21 m-3
|
Doping level channel.
|
|
13
|
dsub=1e+21 m-3
|
Doping level substrate.
|
|
14
|
vsub=0.6 V
|
Substrate diffusion voltage.
|
|
15
|
vgap=1.2 V
|
Bandgap voltage channel.
|
|
16
|
cgate=0 F
|
Gate capacitance at zero bias.
|
|
17
|
csub=0 F
|
Substrate capacitance at zero bias.
|
|
18
|
tausc=0 s
|
Space charge transit time of the channel.
|
|
19
|
ach=0
|
Temperature coefficient resistivity of the channel.
|
|
20
|
achmod=0
|
Parameter to switch to extended temperature scaling.
|
|
21
|
achron=0
|
Temperature coefficient of ohmic resistance at zero bias.
|
|
22
|
achvsat=0
|
Temperature coefficient of critical drain-source voltage for hot carriers.
|
|
23
|
achrsat=0
|
Temperature coefficient of space charge resistance at zero bias.
|
|
24
|
tref=25 deg. C
|
Reference temperature.
|
|
25
|
dta=0 deg. C
|
Temperature offset of the device.
|
|
26
|
rth=300 K/W
|
Thermal resistance.
|
|
27
|
cth=3e-09 J/K
|
Thermal capacitance.
|
|
28
|
ath=0
|
Temperature coefficient of the thermal resistance.
|
|
29
|
type=n
|
Transistor gender. Possible values are n and p.
|
|
30
|
imax=1000 A
|
Explosion current.
|
|
31
|
tnom (deg. C)
|
Alias of tnom.
|
|
32
|
tr (deg. C)
|
Alias of tnom.
|
|
33
|
simkitver=3.4
|
|
|
34
|
compatible=spectre
|
Make device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, and pspice.
|
Output Parameters
|
1
|
tempeff (C)
|
Effective temperature for a single device.
|
|
2
|
meff
|
Effective multiplicity factor (m-factor).
|
|
3
|
int_s
|
|
|
4
|
int_d
|
|
Operating-Point Parameters
|
1
|
ids (A)
|
Drain source current (including velocity saturation).
|
|
2
|
vds (V)
|
Drain source voltage.
|
|
3
|
vgs (V)
|
Gate source voltage.
|
|
4
|
vbs (V)
|
Bulk source voltage.
|
|
5
|
vp (V)
|
Channel pinch off voltage.
|
|
6
|
gm (A/V)
|
Transconductance (dIds/dVg).
|
|
7
|
gmb (A/V)
|
Bulk transconductance (dIds/dVb).
|
|
8
|
gds (A/V)
|
Output conductance (dIds/dVd).
|
|
9
|
qg (C)
|
Gate charge.
|
|
10
|
cgd (F)
|
Gate charge dependence on drain voltage (- dQg/dVd).
|
|
11
|
cgg (F)
|
Gate charge dependence on gate voltage (dQg/dVg).
|
|
12
|
cgs (F)
|
Gate charge dependence on source voltage (-dQg/dVs).
|
|
13
|
cgb (F)
|
Gate charge dependence on bulk voltage (-dQg/dVb).
|
|
14
|
qb (C)
|
Bulk charge.
|
|
15
|
cbd (F)
|
Bulk charge dependence on drain voltage (-dQb/dVd).
|
|
16
|
cbg (F)
|
Bulk charge dependence on gate voltage (-dQb/dVg).
|
|
17
|
cbs (F)
|
Bulk charge dependence on source voltage (-dQb/dVs).
|
|
18
|
cbb (F)
|
Bulk charge dependence on bulk voltage (dQb/dVb).
|
|
19
|
qd (C)
|
Drain charge.
|
|
20
|
cdd (F)
|
Drain charge dependence on drain voltage (dQd/dVd).
|
|
21
|
cdg (F)
|
Drain charge dependence on gate voltage (-dQd/dVg).
|
|
22
|
cds (F)
|
Drain charge dependence on source voltage (-dQd/dVs).
|
|
23
|
cdb (F)
|
Drain charge dependence on bulk voltage (-dQd/dVb).
|
|
24
|
qs (C)
|
Source charge.
|
|
25
|
csd (F)
|
Source charge dependence on drain voltage (-dQs/dVd).
|
|
26
|
csg (F)
|
Source charge dependence on gate voltage (-dQs/dVg).
|
|
27
|
css (F)
|
Source charge dependence on source voltage (dQs/dVs).
|
|
28
|
csb (F)
|
Source charge dependence on bulk voltage (-dQs/dVb).
|
|
29
|
u
|
Transistor gain (gm/gds).
|
|
30
|
rout (Ω)
|
Small signal output resistance (1/gds).
|
|
31
|
vearly (V)
|
Equivalent early voltage (|Ids|/gds).
|
|
32
|
iohm (A)
|
Drain source current excluding velocity saturation.
|
|
33
|
ihc (A)
|
Critical current for velocity saturation.
|
|
34
|
Pdiss (W)
|
Dissipation.
|
|
35
|
TK (K)
|
Actual temperature.
|
|
36
|
ctype
|
Channel type (-1 for PMOS, +1 for NMOS).
|
|
37
|
pwr (W)
|
Power.
|
|
38
|
mos_region
|
MOS region. Possible values are off, sat, triode, and subth.
|
Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
|
Pdiss OP-34
|
compatible M-39
|
mult I-1
|
tr M-38
|
|
TK OP-35
|
csb OP-28
|
paramchk M-2
|
tref M-31
|
|
ach M-26
|
csd OP-25
|
printscaled I-2
|
trise I-3
|
|
achmod M-27
|
csg OP-26
|
psat M-16
|
type M-36
|
|
achron M-28
|
css OP-27
|
pwr OP-37
|
u OP-29
|
|
achrsat M-30
|
csub M-24
|
qb OP-14
|
vballmsg M-9
|
|
achvsat M-29
|
cth M-34
|
qd OP-19
|
vbdbhigh M-6
|
|
ath M-35
|
ctype OP-36
|
qg OP-9
|
vbdblow M-5
|
|
cbb OP-18
|
dch M-19
|
qs OP-24
|
vbds M-4
|
|
cbd OP-15
|
dsub M-20
|
region I-4
|
vbox M-3
|
|
cbg OP-16
|
dta M-32
|
ron M-13
|
vbs OP-4
|
|
cbs OP-17
|
gds OP-8
|
rout OP-30
|
vbsbhigh M-8
|
|
cdb OP-23
|
gm OP-6
|
rsat M-14
|
vbsblow M-7
|
|
cdd OP-20
|
gmb OP-7
|
rth M-33
|
vds OP-2
|
|
cdg OP-21
|
ids OP-1
|
stop M-12
|
vearly OP-31
|
|
cds OP-22
|
ihc OP-33
|
tausc M-25
|
vgap M-22
|
|
cgate M-23
|
iohm OP-32
|
tdelay M-11
|
vgs OP-3
|
|
cgb OP-13
|
level M-1
|
tempeff O-1
|
vp M-17
|
|
cgd OP-10
|
m I-5
|
tmin M-10
|
vp OP-5
|
|
cgg OP-11
|
meff O-2
|
tnom M-37
|
vsat M-15
|
|
cgs OP-12
|
mos_region OP-38
|
tox M-18
|
vsub M-21
|
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